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Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping PDF

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Preview Transport and magnetic properties of GdBaCo_{2}O_{5+x} single crystals: A cobalt oxide with square-lattice CoO_2 planes over a wide range of electron and hole doping

Transport and magnetic properties of GdBaCo O single crystals: A cobalt oxide 2 5+x with square-lattice CoO planes over a wide range of electron and hole doping 2 A. A. Taskin,∗ A. N. Lavrov,† and Yoichi Ando Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511, Japan SinglecrystalsofthelayeredperovskiteGdBaCo2O5+x (GBCO)havebeengrownbythefloating- zone method, and their transport, magnetic, and structural properties have been studied in detail 5 overa wide range of oxygen contents, 0≤x≤0.77. The obtained data are used to establish a rich 0 0 phasediagramcenteredatthe“parent”compoundGdBaCo2O5.5 –aninsulatorwithCoionsinthe 2 3+state. AnattractivefeatureofGdBaCo2O5+xisthatitallowsapreciseandcontinuousdopingof CoO2 planeswitheitherelectronsorholes,spanningawiderangefromthecharge-orderedinsulator n at 50% electron doping (x = 0) to the undoped band insulator (x = 0.5), and further towards a theheavily hole-doped metallic state. This continuousdopingis clearly manifested in thebehavior J of thermoelectric power which exhibits a spectacular divergence with approaching x=0.5, where it 8 reacheslargeabsolutevalues(±800µV/K)andabruptlychangesitssign. Atlowtemperatures,the 2 homogeneous distribution of doped carriers in GBCO becomes unstable, as is often the case with strongly correlated systems,and boththemagneticand transport propertiespoint toan intriguing ] l nanoscopic phaseseparation intotwoinsulating phases(for electron-doped region) or an insulating e anda metallic phases (for hole-doped region). Wealso findthat throughoutthecomposition range - r the magnetic behavior in GBCO is governed by a delicate balance between ferromagnetic (FM) t and antiferromagnetic (AF) interactions, which can be easily affected by temperature, doping, or s . magneticfield,bringingaboutFM-AFtransitionsandagiantmagnetoresistance(MR)phenomenon. t a What distinguishes GBCO from the colossal-MR manganites is an exceptionally strong uniaxial m anisotropy oftheCospins, which dramatically simplifies thepossible spin arrangements. This spin - anisotropy togetherwith thepossibility of continuousambipolar dopingturnGdBaCo2O5+x intoa d model system for studying the competing magnetic interactions, nanoscopic phase separation and n accompanying magnetoresistance phenomena. o c PACSnumbers: 72.80.Ga, 72.20.Pa,75.30.Kz,75.47.De [ 1 I. INTRODUCTION ison of different systems could give a clue to the be- v havior of cuprates and manganites, and because those 6 less studied systems might be interesting in their own 0 Since the discovery of the high-T superconductivity 7 c right. Such exploration has indeed been proven to (HTSC)incupratesandshortlyafterofthecolossalmag- 1 be very fruitful, resulting, for instance, in the discov- 0 netoresistance (CMR) in manganites, a great deal of ex- ery of unconventional superconductivity in a layered- 5 perimentalandtheoreticaleffortshavebeenmadetoclar- perovskite ruthenium oxide4 and recently in a layered 0 ifythenatureofthesephenomena. Theresearchhassoon cobalt oxide.5 A study of nickel and cobalt oxides has t/ revealedthatthe unusualbehaviorofcupratesandman- also revealed the spin/charge ordering phenomena6,7,8,9 ma ganites is not limited to HTSC and CMR: These com- and nanoscopic phase separation10,11 closely resem- pounds based on seemingly simple metal-oxygen planes bling those in cuprates and manganites; these obser- - turn out to possess very rich phase diagrams, originat- d vations confirm that the charge ordering is indeed a ing from strong electron correlations and involving spin, n generic feature of strongly correlated electrons. By charge, orbital, and lattice degrees of freedom.1,2,3 In o now, probably the most rich and intriguing behavior c particular, the strong electron correlations, which pre- has been found in cobalt oxides, which ranges from gi- v: vent the electrons in partially filled bands from form- antMR12,13,14,15,16,17 andlargethermoelectricpowerat- i ing conventional itinerant Bloch states, make these sys- tributed to strong electron correlations18,19,20,21 to un- X tems prone to nanoscopic phase separation and self- conventional superconductivity.5 Apparently, the cobalt r organization of electrons into various superstructures. oxides, which are still much less studied than cuprates a The role of this electron self-organization still remains or manganites, are meant to become the next primary controversial. It is often argued, for example, that the field in investigations of the strongly correlated electron HTSC and CMR would never be possible in a homoge- systems. neous system,andit is the nanoscopicmixture ofphases Unlike cuprates and manganites, the layered cobalt that stays behind these novel phenomena.2,3 oxides have two substantially different crystallographic Ironically,thecomplexityofmanganeseandcopperox- types: thelayeredperovskitesderivedfromsquare-lattice ides that brings about all the fascinating physics also CoO planes, similar to HTSC and CMR compounds, 2 makes these compounds very difficult for understand- and compounds like Na CoO derived from triangular- x 2 ing. The research thus naturally expanded towards lattice CoO planes. In both cases,the CoO planes can 2 2 other transition-metal oxides, both because the compar- be doped with charge carriers over a remarkably wide 2 range so that the effective valence of Co ions varies from Co2+ to Co4+.1 In other words, the doping level ranges from one electron to one hole per Co ion, if the Co3+ state withevennumberofelectronsis takenas the “par- ent”state. Empirically,thesquare-latticeandtriangular- lattice systems behave quite differently. For example, the square-lattice cobalt oxides, such as La Sr CoO , 2−x x 4 Bi Sr CoO , and RBaCo O (where R is a rare 2 2 6+δ 2 5+x earth element), are usually reported to be non- metallic,8,11,12,13,14,15,16,17,22,23,24,25withtheexceptionof heavily hole-doped cubic perovskites La Sr CoO .10 1−x x 3 In contrast, the triangular-lattice cobaltites often ap- pear to be fairly good metals,18,26,27 with the hydrated Na CoO being even a superconductor.5 This difference x 2 in behavior may come in part from a disparity in the doping level, given that the latter compounds were usu- FIG. 1: Schematic picture of the RBaCo2O5+x structure for ally studied in a more highly hole-doped region. Never- x = 0.5. It is worth noting that the oxygen ions in [ROx] theless, the surprisingly robust non-metallic state in the layers demonstrate a strong tendency to ordering; for x = square-lattice cobalt oxides11,25 clearly points to a more 0.5, forexample,theyform alternatingfilledandemptyrows runningalong thea axis.12,23,28 fundamental source, which is presumably a very strong tendency to charge ordering. In the triangular-lattice compoundssuchtendencymightbeconsiderablyweaker. Indeed, the charge ordering usually gains support from of already grown RBaCo O crystals can be modified 2 5+x theantiferromagnetic(AF)exchange,whileinatriangu- byannealingatvarioustemperaturesandoxygenpartial lar lattice the AF spin interactions should inevitably be pressures, which may allow one to span the entire phase frustrated. Thus far, however, non of these systems has diagram using one and the same single crystal. Further- been systematically investigated over the entire doping more, by varying the oxygen content one can tune the rangetorevealacoherentpictureofdopedcobalt-oxygen dopinglevelverysmoothly,whichgivesagreatadvantage planes. in studying the critical regions of the phase diagram. Inthis work,we undertakeasystematic study ofmag- Upon choosing a compound from the RBaCo O 2 5+x netic and transport properties of a square-lattice cobalt group, one would prefer to have a non-magnetic R ion, oxide over a wide doping range. For this purpose, we such as Y, La, or Lu, to avoid additional complica- have selected the RBaCo2O5+x compounds (where R is tion coming from the rare-earth magnetism. Unfortu- a rare earth element), which have already attracted a nately, the growth of single crystals with these non- lot of attention owing to such fascinating features as magneticelementsturnsouttobevirtuallyimpossible.31 the spin-state and metal-insulator transitions, charge Therefore, we have selected the GdBaCo O com- 2 5+x and orbital ordering phenomena, and giant magne- pound: Gd3+, being a 4f7 ion with zero orbital mo- toresistance (GMR).8,9,12,13,14,15,16,17,22,23,24,28,29,30 The ment, is known to show rather simple magnetic be- RBaCo2O5+x compoundspossessalayeredcrystalstruc- havior in transition-metal compounds, making predom- turewhichconsistsofsquare-latticelayers[CoO2]-[BaO]- inantly paramagnetic contribution, which can be easily [CoO2]-[ROx]stackedconsecutivelyalongthecaxis(Fig. subtracted from the overall magnetization. Also, ow- 1) – a so-called “112”-type structure.12 This structure ing to the intermediate size of Gd ion in the series of is derived from a simple cubic perovskite R1−xBaxMO3 rare-earth elements, GdBaCo2O5+x allows a fairly wide (where M is a transition metal), but in contrast to the range of available oxygen concentration. Recently, we latter, the rare-earthand alkali-earth ions are located in succeeded in growing high-quality GdBaCo O single 2 5+x their individual layers instead of being randomly mixed. crystalsusingthefloating-zone(FZ)technique,andstud- WhatmakesRBaCo O compoundsparticularlyat- ied the magnetic and transport properties of the parent, 2 5+x tractive for our study is a large variability of the oxygen x=0.50, composition.17 content: By changing the annealing conditions, one can Here, we present a systematic data on the evolution modify the oxygenconcentrationin the rare-earth[RO ] of transport, magnetic, and thermoelectric properties of x planes (Fig. 1) in a wide range, 0 ≤ x ≤ 1 (x depends well-characterizedGdBaCo O singlecrystalsoverthe 2 5+x alsoonthesizeofR3+ ion).12,28 Inturn,theoxygencon- entiredopingrangeavailableforthiscompound,namely, tentcontrolsthenominalvalenceofCoions,whichvaries 0 ≤ x ≤ 0.77. This layered cobalt oxide turns out to from 2.5+ to 3.5+, passing through 3+ (“parent” state) beareallyfascinatingfilling-controlsystemwhichallows at x = 0.5. Ordinarily, experimental investigations of a continuous ambipolar doping: We have developed a theT−xphasediagramsofsolidsareverytimeconsum- technique that provides an easy and precise tuning of ing, because they require to grow many single crystals the oxygencontent in GdBaCo O single crystals and 2 5+x of different compositions. In contrast, the composition ceramics, and succeeded in doping the parent semicon- 3 ductor (x = 0.50) with electrons (x < 0.50) or holes // // // (x > 0.50) with steps that could be as small as 0.001 100 a axis 200 per Co ion (∆x ∼ 0.001). As a result, we could ob- (040) serve spectacular singularities in the transport proper- x 10 ttitsmihipeteiipsnoamunocpotrbodtoeniefotrwnaainpesogepmfnriaondtlaolhtcpahehemiidsfneogcrhuortonomhltmeeposaoufgaundnnndoeddpot.pieecdelOedaccunatsrrdrtorasinttaeeusnr,,dstciyaofoennuhrdrlatdohssmetcruoecadmvogyemnpaetpalthereidece- ensity (arb. units) 010 x 50////////020x 1 0 //////// 030bx 2 5a xis //////// 040 5ensity (10 cps)1 aisrfiochunpdhatsoeidnicalgurdaemrefogriotnhsisolfayaenreidntcroigbuailntgoxniadne,oswchoipcihc Int 001 002 c axis003 004 Int0 phase separation over virtually the entire doping range. x 70 x 2 x 5 -0.2 0.0 0.2 This paper is organized as follows. In Section II, we 11 12// 23 /3/4 35 //46 47 48 qD (deg) describe the growth of high-quality GdBaCo2O5+x sin- 2q (deg) gle crystals by the floating-zone technique, the method of modifying their oxygen content, and the detwinning FIG. 2: (Left) X-ray Bragg’s peaks for GdBaCo2O5+x (x = technique used to obtain single-domain orthorhombic 0.5) crystals, which demonstrate theunit-cell doubling along crystals. The details of magnetic and transport mea- the b and the c axis (each peak has CuKα1 and CuKα2 con- surements are also presented in Section II. Section III tributions to the diffraction pattern). For convenience, the starts with a brief summary of the crystal structure peak intensity is multiplied by a factor indicated near each peak. (Right) X-ray (040) rocking curve. of GdBaCo O over the oxygen-concentration range 2 5+x 0 ≤ x ≤ 0.77, which is followed with the experimental results ontransport, thermoelectric, and magnetic prop- erties of GdBaCo2O5+x, studied in this wide range of ing the ordered “112” crystal structure, and for reduc- oxygen concentrations. The obtained data are used to ing the number of domains in the resulting crystalline establish an empirical phase diagram presented at the rod; higher rates inevitably caused multi-domain crystal end of this section. The implications of our observations growth. Using optical microscopy and Laue x-ray back- are discussed in Section IV. Based on the obtained ex- reflection control, we selected single-domain parts of the perimental results, first we propose a magnetic and elec- growncrystalrodand cut them into parallelepipedsam- tronicstructure ofthe parentGdBaCo2O5.50 compound, ples suitable for structural, transportand magnetization giving our explanation of its transport behavior and the measurements. All the samples’faces were carefully pol- origin of GMR; then we discuss the effects of doping in ished and adjusted to the crystallographic planes with a GdBaCo2O5+x;and,finally,suggestanoverallelectronic 1◦ accuracy. phasediagramforthiscompound. SectionVsummarizes The homogeneity and stoichiometry of the obtained our findings. GdBaCo O crystals were analyzed by the electron- 2 5+x probe microanalysis (EPMA) and inductively-coupled plasma(ICP) spectroscopywhich confirmedthatthe ac- II. EXPERIMENTAL DETAILS tual cation composition was uniform, corresponding to thenominal1:1:2ratiowithintheexperimentalaccuracy. A. Growth of GdBaCo O crystals 2 5+x Another important issue is whether Gd and Ba are well ordered in the lattice; in fact, we found that large rare- We have grown high-quality GdBaCo2O5+x single earth ions, such as La and Pr, easily mixed with Ba, crystalsbythe floating-zonetechnique,usinganinfrared resulting in a disordered cubic phase R Ba CoO . 0.5 0.5 3−δ image furnace with two halogen lamps and double ellip- InthecaseofGdBaCo O crystals,however,thex-ray 2 5+x soidal mirrors (NEC Machinery SC E-15HD). A poly- diffraction data demonstrate that Gd and Ba are indeed crystalline feed rod for the crystal growth was prepared well ordered into consecutive (001) layers, which results by the solid-state reaction of Gd2O3, BaCO3, and CoO in the doubling of the unit cell along the c axis (Fig. 2). dried powders: The mixture was successively calcined Moreover,fortheoxygenconcentrationx≈0.5,theoxy- at 850◦C, 900◦C, 950◦C, and 1000◦C, each time for 20 gen ions are found to form alternating filled and empty hours, with carefulregrinding after each sintering. Then chains running along the a axis; this brings about the the obtained homogeneous single-phase GdBaCo2O5+x doublingoftheunitcellalongthebaxis(Fig. 2). Appar- powder was isostatically pressed (at ∼70 MPa) to form ently, such long-range oxygen ordering would hardly be a rod with typical dimensions of 7 mmφ × 100 mm. Fi- possible if considerable amount of Ba were substituting nally,thefeedrodwasannealedat1200◦Cinairtomake Gd in GdO layers. Figure 2 shows also a typical x-ray x it dense and hard. rocking curve (040) for GdBaCo O , which has a full- 2 5.5 The crystal growth was performed in a flow of dried width-at-half-maximum(FWHM) oflessthan0.1◦,indi- air, at a constant rate of 0.5 mm/h. We found that catingthatourcrystalshavefewmacroscopicdefects. An such rather slow growth rate was essential for obtain- additional evidence for the macroscopic crystallographic 4 0.6 0.6 perfection is the ease with which the crystals could be (a) (b) cleaved,especially along the {001}planes, exposing per- 0.5 0.5 fectly flat, shiny surfaces. q nt, xe 0.4 0.4 B. Tuning the oxygen content in GdBaCo2O5+x onte 0.3 0.3 400oC n c GdBaCoO 55 0 oC 1. Equilibrium oxygen concentration as a function of yge 0.2 oxyge2n5+x 0.2 700oC temperature and oxygen partial pressure Ox pressure 1 bar 0.1 0.1 0.2 bar Owing to the layered“112”crystalstructure, the oxy- 0.01 bar gencontentinRBaCo2O5+x canbe variedwithinawide 0.0 0.0 range 0 < x < 1, where the oxygen vacancies are lo- 300 400 500 600 700 10-5 10-3 10-1 101 catedpredominantlyintherare-earthRO planes.15The T (oC) Oxygen pressure (bar) x mostconvenientwaytomodifytheoxygenstoichiometry is the high-temperature annealing, yet it requires a de- FIG. 3: The equilibrium oxygen concentration xeq in tailed knowledge of how the equilibrium oxygen content GdBaCo2O5+x. (a) Temperaturedependencesof xeq for sev- eral values of the oxygen partial pressure. (b) Dependences dependsonthetemperatureandoxygenpartialpressure. Besides,oneneedstoknowthekineticsoftheoxygenex- ofxeq ontheoxygenpartialpressureatseveraltemperatures. change: The annealing temperature should be carefully chosen so that the oxygen exchange is quick enough for changing remarkably with a minute (by merely 0.001) the equilibrium state to be reachedin a reasonabletime, modification of x. The calibrations that used the x = 0 but still slow enough to avoid unwanted oxygen absorp- and x = 0.5 points gave the same results, which allows tion during the subsequent cooling of the sample. us to be confidentinabsolute values ofxinour samples. In order to establish such dependences, we have per- Temperature dependences of the equilibrium oxygen formed special sets of annealings, systematically varying content x in GdBaCo O for different oxygen partial temperature, oxygen partial pressure P , and anneal- 2 5+x O2 pressures are shown in Fig. 3(a), which demonstrates ing time, as exemplified by the data shown in Fig. 3. that a large variation of x can be achieved by relatively By measuringthe weightchangeof ∼1-g polycrystalline simple means: by annealing in a flow of oxygen and ar- samples,aswellaslargesinglecrystals,witha0.1-µgres- gonmixed in different proportions. Note that the shown olution, we couldevaluate the changein the oxygencon- datacorrespondtotheequilibriumstate,andthatallthe tent ∆x with an accuracy better than 0.001. Although changesinoxygenconcentrationarethereforecompletely alltherelativeoxygenvariationsaremeasuredveryaccu- reversible. Our measurements haveshownthat the equi- rately,therewouldstillbealargeuncertaintyintheabso- libriumxvalueatagiventemperatureisroughlypropor- lutevaluesofx,unlesswepinthisrelativescaletotheab- tionalto the logarithmofthe oxygenpartialpressure,as solute oxygencontentat least at one point. Fortunately, long as x is not too close to zero [Fig. 3(b)]. Therefore, in GdBaCo O there are two peculiar oxygen concen- 2 5+x inorderto obtainthe lowestoxygenconcentrationx=0 trations that allow the absolute x scale to be establish we annealed samples in a flow of argon or helium, and unambiguously. First,inGdBaCo O crystals,similar 2 5+x used strongly diluted (down to 10 ppm) oxygen-argon to other RBaCo O compounds with small rare-earth 2 5+x ions,8,9,28 the oxygen content can be reduced down to mixturestoaccessthelow-xrange,althoughprecisetun- ing of x in this case becomes technically more difficult. x=0byannealinginvacuum,orinertatmosphere. One In the opposite limit, the samples with oxygen concen- can naturally expect the x=0 composition to be stable trations up to x = 0.77 were prepared by annealing in overratherbroadrangeofparameters,sinceinthisphase oxygen at high pressures (up to 70 MPa). all the weakly-boundoxygenis removedfromGdO lay- x ers, while the strongly-bound oxygen in BaO and CoO 2 layers is still intact. Indeed, we observed that x satu- rates, approaching some lowest level [see Fig. 3(b)] as 2. Oxygen intercalation kinetics the oxygenpartialpressure is reduced andthe annealing temperature is increased, and we attributed this satu- As we have mentioned above, there is one more point ration value to x = 0. Much more sensitive calibration to be concerned about, upon choosing the proper an- can be done at the x=0.5 point, which turns out to be nealing conditions, besides the equilibrium x value: it criticalforGdBaCo O : Uponcrossingthis point,the is the oxygen-intercalation kinetics. If the oxygen diffu- 2 5+x mixedvalencecompositionofCo2+/Co3+ ionsturnsinto sionistooslow,onewillinevitablyendupwithacrystal theCo3+/Co4+ one,andconsequentlythetypeofcharge having a large composition gradient; if, in contrast, the carriers switches abruptly. As we will show below, sev- oxygen uptake is too fast, it will be difficult to preserve eral physical properties of GdBaCo O exhibit a very the achievedstate evenby very fastcooling. By measur- 2 5+x sharp singularity in their x dependences near x = 0.5, ing how the sample’s mass evolves with time t, we have 5 0.55 0.25 (a) (b) (c) 0.6 600oC 0.50 0.20 10 - 3 bar ceramic 1000m m x 600m m 0.4 crystal 0.45 0.15 500m m x 400m m ~X 10 - 4 bar 0.40 1 bar 0.10 0.2 300oC 1 bar 0.35 350oC 0.05 250oC 400oC 2 . 10 - 5 bar 0.0 0.30 0.00 0 10 20 30 40 50 0 2 4 6 8 10 0 2 4 6 8 10 Annealing time (h) Annealing time (h) Annealing time (h) FIG. 4: Kinetics of the oxygen intercalation into GdBaCo2O5+x. (a) Comparison of the oxygen uptake in a ceramic sample (with an average grain size of ∼ 10 µm) and a single crystal (with sizes in the ab plane of 500 µm×400 µm) measured in the oxygen flow at 250◦C. Solid lines are the result of simulation, see text. (b) The oxygen uptake in a single crystal with sizes in the ab plane of 1000 µm×600 µm measured in the oxygen flow at different temperatures (solid lines are the result of simulation). (c) Dependenceof theoxygen-uptakekinetics in a ceramic samples at 600◦C on theoxygen partial pressure. determined the time dependences of the average oxygen dependsonthesurfaceexchangecoefficientK,character- content x˜(t) for different annealing conditions, as shown izing the oxygen exchange at the interface between the in Fig. 4. Apparently, the proper duration of the heat gas and the solid, and the chemical diffusion coefficient treatmentnecessarytoobtainahomogeneousoxygendis- D, besides the sample size. These parameterscanbe ex- tributionshouldbeseveraltimeslongerthanthe charac- tractedbyfittingtheoreticalcurvestoexperimentaldata, teristic time τ of the oxygenexchange processat a given as exemplified in Figs. 4(a) and 4(b). For example, the temperature and an oxygen partial pressure. We have data shown in Fig. 4(a) provide the diffusion-coefficient foundthatforceramicsamplesthe kineticsofoxygenin- valueofD =3×10−8cm2/sat250◦C.34 Withincreasing tercalation in the entire studied ranges of temperature temperature, the diffusion coefficient grows rapidly and and P follows a simple exponential law, so does the rate of the oxygen uptake, making it possi- O2 ble to achievea homogeneousoxygendistribution in ∼1 x˜(t)=x∞−[x∞−x0]e−t/τ, (1) mmsizedcrystalalreadyafterseveralhoursannealingat 400◦C[Fig. 4(b)]. Notethattheoxygenkineticsdoesnot wherex0 andx∞ aretheinitialandtheequilibriumoxy- show any detectable difference upon varying the sample gen contents, τ is a time constant that depends on tem- sizealongthecaxis,implyinganessentially2Dcharacter perature and PO2. Such simple exponential dependence of the oxygen diffusion typical for layered oxides.35 can be naturally attributed to the oxygen exchange lim- We should note that the diffusion coefficient found in ited by a surface energy barrier. The time constant τ GdBaCo O is remarkable in its own right, being un- turns out to be less than 3 hours at temperatures down 2 5+x usually large for such low temperatures; the oxygen dif- to 250◦C (at 1 bar oxygenpressure), so that the equilib- fusivity appears to be comparable with that in best su- rium state in ceramic samples can be easily achieved by perionic conductors.34 One additional implication of the one-day annealing [Fig. 4(a)]. high oxygen mobility, which is important to the present Inthecaseofsinglecrystals,however,theoxygeninter- study,isthattheoxygenionsmaybecapableofrearrang- calation deviates from the simple exponential behavior, ing even at room temperature or below, and one should andgoesatanoticeablyslowerrate,asillustratedinFig. expect the oxygen to form ordered superstructures or to 4(a). We have found that for ∼ 500 µm sized crystals, participate in mesoscopic phase separation. two days of annealing at 250◦C is far from being enough toreachtheequilibriumoxygenconcentration[Fig. 4(a)]; After the homogeneous oxygen distribution in a crys- suchannealingturnsouttobeinsufficientevenfor∼100 tal is reached, an important issue to be concern about µmsamples. Thisdifferenceinthekineticsofoxygenab- is the cooling procedure, which must be as fast as pos- sorptionisapparentlycausedbyanadditionallimitation sible to avoid any further oxygen uptake. To obtain the imposed by the bulk oxygen diffusion: While the crystal most homogeneous samples we used the following rules surface layer is readily filled with oxygen, it takes much upon selecting the annealing conditions. The anneal- more time for oxygen to diffuse towards the inner part ing temperature and the partial oxygen pressure were ofthe crystal. For rectangular-shapecrystalsthe oxygen selected so that: i) they provided the required oxygen exchange kinetics has an analytical solution,32,33 which content in the crystal, and ii) the annealing time nec- 6 essary to reach the equilibrium oxygen distribution was electric contacts were obtained by drawing with a gold in the range from several hours to several days. After paint on polished crystal surfaces, and subsequent heat the annealing was completed, the samples were quickly treatment. For current contacts, the whole area of two quenched to room temperature without changing the opposing side faces was painted with gold to ensure a atmosphere. Upon quenching, the crystal temperature uniform current flow through the sample. In turn, the droppedby100−200◦Cinseveralseconds,guaranteeing voltagecontactsweremadenarrow(∼50µm)inorderto the blocking of any further oxygen exchange. The huge minimize the uncertainty in absolute values of the resis- differenceinthetimescales–hoursanddaysformodify- tivity. Itisimportanttonotethatthegoldcontactswere ing the oxygen concentration and seconds for quenching prepared before all the heat treatments that were used – ensured us that the unwanted oxygenuptake could af- to vary the oxygen content. After the required oxygen fect no more than a fraction of percent of the crystal’s concentrationwas set by annealing, thin gold wires were volume. An important point to be specially emphasized attached to the contact pads using a room-temperature- is that the oxygenexchangeat the interface between the dryingsilverpaste(DuPont4922),whichelectricallyand gas and the solid is strongly suppressed at low oxygen mechanicallyboundthe wireto the sample. As the mea- partialpressures. AsillustratedinFig. 4(c),byreducing surements were completed, the wires were removed and theoxygenpartialpressureonecanarrangeaslowoxygen the crystal was reannealed to get the next x value. uptake in a ceramic sample even at 600◦C. This feature The MR measurements were done either by sweeping turns out to be very useful in obtaining homogeneous the magnetic field between ±14 T at fixed temperatures samples within the low oxygen concentration range. stabilized by a capacitance sensor with an accuracy of ∼1 mK,37 or by sweeping the temperature at a fixed magnetic field. Both ∆ρ /ρ and ∆ρ /ρ have been c c ab ab C. Detwinning of crystals measured for Hkab and Hkc. The Hall resistivity was measured using a standard The oxygen ordering is indeed observed in six-probetechnique by sweeping the magnetic field Hkc GdBaCo O at x ≈ 0.5, where the oxygen ions to both plus and minus polarities at fixed temperatures; 2 5+x in GdO planes order into alternating filled and empty the electric currentwas alwaysalong the ab-plane. After x chains, causing a tetragonal-to-orthorhombic (T-O) the symmetric (MR) contribution coming from a slight transition and doubling of the unit cell along the b axis misplacement of the contacts was subtracted from the (Fig. 2). Usually, this T-O transition is accompanied raw data, the Hall resistivity appeared to be perfectly by heavy twinning of crystals that mixes the a and b linear in magnetic field for all measured temperatures, orthorhombic axes; one therefore needs to perform a de- implying that the anomalous Hall effect was negligible. twinning procedure to get a single-domainorthorhombic In order to determine the thermoelectric power (See- crystal for studying the in-plane anisotropy. To detwin beckcoefficient)S,wegeneratedaslowlyoscillatingther- crystals, we slowly cooled them under a uniaxial pres- malgradientalongthe sample (within ∼1 K),and mea- sure of ∼ 0.15 GPa from 260◦C, using a polarized-light sured an induced periodic voltage. This allowed us to optical microscope to control the twin removing.36 We get rid of thermoelectric contributions generated in the should note, however, that the GdBaCo2O5+x crystals remaining circuit. A chromel-constantan thermocouple are very fragile, and it was virtually impossible to employed for measuring the thermal gradient was at- completethedetwinningprocedurewithouthavingthem tached to the heat source and to the heat sink, which cleavedinto two or more pieces. These pieces were fairly were fixed to the sample by a silver paste. To obtain well detwinned (according to x-ray measurements, the the absolute value of the thermoelectric power, a contri- remaining fraction of misoriented domains usually did bution from the gold wires (∼ 2 µV/K) used as output not exceed 4-5%) and suitable for magnetization mea- leads was subtracted. Thermopower measurements were surements. Thus far, however, we have not succeeded in mostlyperformedonlong(>2mm)samplesbyapplying detwinning the crystals with already prepared electrical a temperature gradient along the a or the b axis. contacts (see below), which are necessary for transport Magnetization measurements were carried out using a measurements. SQUID magnetometer at fields up to 7 T applied along one of the crystallographic axis. Measurement modes included taking data upon heating the sample after it D. Details of measurements wascooleddownto2Kinzerofield(ZFC),uponcooling the sample inmagnetic field from400K (FC), andupon To characterize the physical properties of sweeping the field at fixed temperatures. Throughout GdBaCo O , we have carried out resistivity, mag- this paper, the magnetization coming from Co ions is 2 5+x netoresistance (MR), Hall, thermopower, and magneti- determined by subtracting the contribution of Gd ions, zation measurements within the 2-400 K temperature assuming their ideal paramagnetic (PM) behavior with range. total spin S = 7/2; the latter is a good approximation Thein-plane(ρ )andout-of-plane(ρ )resistivitywas sincenoorderingofGd3+ momentsinanyofthesamples ab c measured using a standard ac four-probe method. Good is detected down to 1.7 K. 7 III. RESULTS We should keep in mind, however, that this dividing is based only on the macroscopic symmetry, and thus it A. Crystal structure should not be taken too literally; the behavior of the local structure may in fact be much more tricky. For example, it is quite likely that oxygen ordering or meso- Figure 5 shows the evolution of the GdBaCo O 2 5+x scopic phase separation takes place at small x values as crystal structure as a function of the oxygen concentra- well, but the ordered domains are too small to be dis- tionx. We canclearlydistinguishthreedifferentcompo- cernible by conventional x-ray diffraction. The same is sition regions: alsotrue forhighoxygencontentswhereone mayexpect • 0 ≤ x < 0.45, the system keeps a macroscopically fairly ordered phases at x ≈ 2/3;3/4, as well as various tetragonal structure, where the unit cell smoothly mesoscopic phase mixtures. expands in the c direction and shrinks in the in- plane directions with increasing x; B. Resistivity • 0.45 < x < 0.60, the oxygen ions order into alter- nating filled and empty chains running along the Inperovskitecompounds,the electron-bandfillingcan a axis,which results in the orthorhombicstructure be modified by a partial substitution of cations with el- andinthe doublingoftheunitcellalongthebaxis ements having a different valence, as in the case of the (see Fig. 2); La Sr MO compounds(M isatransitionmetal),and 1−x x 3 byintroducingcationoranionvacanciesandinterstitials • x>0.60,the system evolvestowards a macroscop- as in V O , LaTiO , and YBa Cu O .1 At in- icallytetragonalsymmetry,thoughinquite acom- 2−y 3 3+δ 2 3 6+x teger filling (integer number of electrons per unit cell) plicatedway. Forcrystalslocatedattheloweredge these compounds are usually band or Mott insulators, ofthis compositionrange,weobservedatthe same yetametallic stateoftenemergesuponchangingthe fill- time the x-ray diffraction peaks corresponding to ing level, that is, when electron or holes are doped into the orthorhombic structure with the unit cell dou- the parent insulator. bling,andthoserelatedtothetetragonalstructure. This two-phase state is clearly intrinsic and unre- In GdBaCo2O5+x, it is obviously the x = 0.5 com- latedtoamacroscopicoxygen-concentrationgradi- position that is the parent compound, where all the Co ent that would emerge if crystals were improperly ions are nominally in the 3+ state. The limiting phases annealed. Indeed, the signs of the two-phase state x = 0 and x = 1 should correspond to the 1:1 mixtures were reproducibly observed only in a quite narrow Co2+/Co3+ and Co3+/Co4+, respectively, or in other range of x and disappeared as the oxygen content words to the doping levels of 0.5 electrons and 0.5 holes wasfurtherincreased. Atthehighestachievedoxy- per Co ion. It would not be surprising, therefore, if the gen concentration, we could distinguish only the x = 0.5 composition were insulating, and a metallic be- tetragonal,albeit somewhat broadened, diffraction havior were emerging when the oxygen content deviates peaks. from x = 0.5 towards lower or higher values. The ac- tual behavior of GdBaCo O , however, turns out to 2 5+x be more complicated: In contrast to the naive expec- 4.0 tations, it never becomes a true metal (Fig. 6), even axes thoughwe changethe doping levelina verybroadrange a from 0.5 electrons per Co (x = 0) up to 0.27 holes per a=b b/2 b Co (x = 0.77).38 At low temperatures, the in-plane re- ) os (A 3.9 c tshisetiwvihtyoleρaabcceexshsiibbiltesraanngiensouflxat.inMgobreeohvaevri,obrythlorookuignhgouatt r e et the low-temperature region (T < 150 K) in Fig. 6, one m may easily find out that the resistivity even increases as a ar the oxygen content is reduced below 0.5 (“electron dop- p Cell 3.8 c/2 ifnrogm”);wchleaatrloyn,ethuesuoablsleyrveexdpeecvtosluttoiosneediuffperosnredmopairnkgabalny insulator. Although GdBaCo O never behaves as a normal 2 5+x metal,thetemperaturedependenceofitsresistivitydoes 3.7 not follow that of a simple insulator or semiconductor 0.0 0.5 1.0 either. As the temperature increases above 200−250 K, x the in-plane resistivity ρ (T) shows a gradual crossover ab (for x ≤ 0.44) or a sharp transition at T ≈ 360 K FIG.5: Room-temperatureparametersoftheGdBaCo2O5+x (for x close to 0.5) into a metal-like state, see inset of unit cell as a function of theoxygen content. Fig. 6. This sharp “metal-insulator” transition (MIT) 8 10-1 x ≥ 0.70. In addition to the MIT, a clear, albeit small, kink is seenonthe ρ(T)curvesinthe temperature range 104 100-260 K, which is related to a magnetic transition as 103 m ) 10-2 will be discussed below. c To make it more transparent how the resistivity in 102 W ( ab GdBaCo2O5+x evolves with oxygen content, in Fig. 7 m ) r 10-3 wReegpalrodtleρsasboaftthseevteermalpteermatpuerrea,ttuhreesxa-dseapefnudnecnticoenooffrxe-. c 101 sistivity splits into roughly the same three composition W ( ab100 300 T3 5(K0) x400 regions as were observed in the behavior of the crystal r structure (Fig. 5). For both low (0 ≤ x < 0.45) and 0.165 10-1 0.440 high (x>0.7) oxygen concentrations, the resistivity ap- 0.450 pears to be almost x-independent, while in the region 0.500 10-2 0.510 0.45 < x ≤ 0.7 it changes rather steeply, by orders of 0.525 magnitude. This step-like resistivity drop, taking place 0.650 10-3 0.700 upon goingfrom “electron-doped”to “hole-doped”com- positions, tends to hide the singularity expected for the 0 100 200 300 400 parentcompound. Onlyverydetaileddatacollectedwith T (K) a step of δx ≤ 0.01 make this singularity discernible on thelow-temperatureρ −xcurves,whereitismanifested ab FIG.6: In-planeresistivity ρab(T) of GdBaCo2O5+x crystals as a narrow peak in the vicinity of x=0.50. with different oxygen concentrations. Inset: expanded view Infact,themostunusualandintriguingfeatureinFig. of ρ (T) in the vicinity of the “metal-insulator” transition. ab 7istheasymmetrywithrespecttotheoxygenconcentra- tionx=0.50. Theresistivityevolutionatx≥0.50looks 104 rather conventional: Indeed, doping of ∼ 2.5% of holes (x=0.525),whichturnsCo-ionsintoamixed3+/4+va- 103 lence state, dramatically improves the conductivity. As T (K) can be seen in Fig. 7, the in-plane resistivity at 100 102 100 K drops by more than two orders of magnitude as x 101 150 increases from ≈ 0.50 to 0.525, and by three orders of m ) 250 magnitude more upon further increasing x. In contrast, c 100 370 upon electron doping (reducing x below 0.50), an initial W ( ab 10-1 daercerseiastsieviotfytghreowretshis.tiMviotryeoavlmero,sitniamwmieddeiarteegliyontuxrn≤s0in.4to4 r boththeabsolutevalueoftheresistivityanditstempera- 10-2 ture dependence arevirtually independent of the oxygen 10-3 content (Figs. 6, 7). Such insensitivity of the conduc- tivity to doping is very unusual, and may only be pos- 0.0 0.5 1.0 sible if the electrons released upon removing the oxygen X do not participate in the charge transport. This clearly speaks against the “rigid-band” picture, where electrons FIG. 7: Doping dependencesof ρab in GdBaCo2O5+x at sev- are expected to fill the lowest-energy unoccupied states. eral temperatures. Apparently, the electron doping is accompanied by de- veloping of microscopic insulating states or mesoscopic regions, where the electrons are immediately trapped. at x ≈ 0.5 is similar to what has been reported for air- At this point it is useful to remind that the insulating sintered RBaCo O ceramics.12,13,14,15 Although the nature of the limiting x = 0 composition has been al- 2 5+x resistivity ρ ∼ 400−600 µΩcm on the metal side of ready understood as coming from the charge ordering of ab the MIT is still relatively large, in transition-metal ox- electrons in CoO2 planes into a unidirectional charge- ides such resistivity values are actually more consistent densitywave.8,9 Itisthereforereasonabletosuggestthat with a metallic, rather than a hopping transport.1 As therobustinsulatingbehaviorobservedinthewiderange can be seen in the inset of Fig. 6, the metal-insulator 0≤x≤0.44 is also associated with some kind of charge transition is the sharpest and takes place at the highest ordering among the doped electrons. temperature T ≈ 364 K for x = 0.50, while any de- Itisinterestingtoanalyzethelow-temperaturebehav- MIT viation from this stoichiometry blurs the MIT and shifts ior of the resistivity, which can give information on the it to lower temperatures. This is particularly clear for transportmechanismsoperatinginthe system. Data fit- high oxygen contents: T is reduced to ∼ 325 K for ting has shown that a crystal with the precisely tuned MIT x = 0.65, and no distinct transition can be found for x=0.50compositionexhibitsasimple activationbehav- 9 T (K) T (K) T (K) 400 100 75 50 400 100 5 0 25 10 400 200 100 105 (a) (b) (c) 104 103 102 m) 101 c W( 100 X X X r 0.500 0.450 0.165 10-1 0.480 0.250 0.505 0.330 10-2 0.510 0.440 0.525 10-3 0.005 0.010 0.015 0.020 0.2 0.3 0.4 0.5 0.6 0.04 0.06 0.08 0.10 0.12 T -1 (K -1) T -1/4 (K -1/4) T -1/2 (K -1/2) FIG.8: Low-temperatureresistivity inGdBaCo2O5+x: (a)activation behaviorfor x=0.50; (b)3Dvariable-rangehoppingfor x=0.45−0.525; and (c) Efros-Shklovskii behavior for x=0.165−0.440. ior ρ ∝exp(∆/T) with ∆≈70 meV [Fig. 8(a)], which better fitted by the Efros-Shklovskii expression for the ab is well consistent with the understanding of this com- hopping conductivity,40 ρ ∝ exp[(T′/T)1/2], see Fig. ab 0 position as a parent insulator (narrow-gap semiconduc- 8(c). The latter behavior is usually observed when the tor). However, when the oxygen content deviates some- Coulomb interaction starts to play a key role in carriers what from x = 0.50, the resistivity behavior almost im- hopping, bringing about a strong depletion in the den- mediately switches into the 3D variable-range hopping sity ofstates (Coulombgap)near the Fermienergy. The (VRH) mode,39 ρ ∝ exp[(T /T)1/4], as shown in Fig. data in Fig. 8 imply that the Coulomb-repulsion effects ab 0 8(b). This type of conduction is typical for disordered in GdBaCo O gain strength as the oxygencontent is 2 5+x systems where the charge carriers move by hopping be- reduced below ≈0.45. tween localized electronic states. The formation of such The unusual resistivity behavior at high oxygen con- localizedstatesmay be rathersimply conceivedof inthe centrations (Fig. 6) is also worth mentioning. For both following way: Initially, at the oxygen composition of the x = 0.65 and x = 0.70 crystals, ρ smoothly in- ab x=0.50,GdBaCo O possessesawell-orderedcrystal 2 5+x creases by 2 − 3 orders of magnitude upon decreasing structure, where the oxygen ions form perfect filled and temperature,andreachesapparentlynon-metallic values emptychainsalternatingalongthebaxis(Fig. 1). When of the order of 1 Ωcm. Nevertheless, it becomes also theoxygenconcentrationdeviatesfromx=0.50,thisre- clear from Fig. 6 that, at least in the temperature range sults either in vacancies emerging in the filled chains, or studied,theresistivitytendstosaturateatafinitevalue, inoxygenionsthatgointotheemptychains. Whilethese instead of diverging at T = 0; such behavior would in- oxygen defects inevitably generate electrons or holes in dicate a metallic ground state, if the resistivity values the CoO planes, they also produce a poorly screened 2 were not that large. A possible solution of this puzzle is Coulomb potential that may well localize the generated anintrinsicmesoscopicphaseseparation,thatmakesthe carriers, so that some of the adjacent Co ions acquire carriers to move along filamentary conducting paths.41 the Co2+ or Co4+ state. Then the conductivity oc- Inthiscase,thezero-temperatureconductivity,beingde- curs through hopping (tunneling) motion of such local- termined by the topology of the metallic phase, may be ized Co2+ or Co4+ states. As can be seen in Fig. 8(b), arbitrary small and can easily violate the Mott limit39 theslopeoftheresistivitycurvesmonotonicallydecreases that sets the minimum metallic conductivity for homo- with increasing x, implying that the localization length geneoussystems. Thispictureisquiteplausible,since,as of holes (Co4+ states) is noticeably larger than that of we have mentioned above, the crystal structure at these electrons. high oxygenconcentrations actually bears signs of phase separation. Upon further decreasing the oxygen content below x ≈ 0.45, the temperature dependence of the resistiv- Thus far we discussed the resistivity behavior along ity becomes steeper than expected for the Mott’s VRH the CoO planes, which is however not the full story, 2 regime, ρ ∝ exp[(T /T)1/4], and we find that it is since one might anticipate a strong electron-transport ab 0 10 105 25 GdBaCoO X 104 2 5.5 0.165 r 20 103 r c 00..235300 ab 0.440 102 0.500 15 m) 101 b c a W ( 100 r / c 10 r r 10-1 5 10-2 (a) (b) 10-3 0 100 200 300 400 100 200 300 400 T (K) T (K) FIG.9: TheresistivityanisotropyinGdBaCo2O5+x. (a)ResistivityofGdBaCo2O5.50 measuredalongthecaxisandalongthe ab plane. (b) The resistivity anisotropy ratio ρc/ρab for x=0.165−0.440 and 0.500. anisotropy to be brought about by the layered crys- this system that is responsible for the appearance of tal structure of GdBaCo O . Indeed, many lay- conductivity anisotropy. 2 5+x ered transition-metal oxides, such as high-T cuprates,42 c manganites,43 or even cobaltites built from triangular- lattice CoO planes,18,26 exhibit huge anisotropy val- C. Thermoelectric power 2 ues and contrasting temperature dependences of the in-plane and out-of-plane resistivity. In the case of Among the features that currently attract a lot of GdBaCo2O5+x, where the GdOx layers with variable attention to transition-metal oxides are their unusual oxygen content are located in between the CoO2 planes andpotentiallyusefulthermoelectricproperties.18,19,44,45 (Fig. 1),itwouldbenaturaltoexpectakindof3D-to-2D The peculiar thermoelectric behaviorin TMoxidesis of- transition to occur upon reducing x from 1 to 0, that is, tenattributedtostrongelectroncorrelations,20,21though astheoxygenionsbindingtheCoO2 planesareremoved. the picture still remains far from being clear. In this However, a comparison of the in-plane and out-of-plane respect, the RBaCo O compounds, being capable of 2 5+x resistivityinFig. 9showsthatthisisnotreallythecase. smoothlychangingthedopinglevelinaverybroadrange, The anisotropy ρc/ρab indeed increases slightly as the appeartoprovideagoodtestinggroundforstudyingthe oxygen concentration is reduced from x ≈ 0.44 towards problem. zero [Fig. 9(b)], but remains rather moderate. In fact, a The thermoelectric power S(T) measured on both considerable anisotropy is observed only at intermediate single-crystal and ceramic GdBaCo O samples46 2 5+x temperatures, while at both high and low temperatures throughout the available oxygen-concentration range is GdBaCo2O5+x tends to become virtually isotropic. It presented in Fig. 10. Following the usual approach in turnsoutthereforethattheoxygen-depletedGdOxlayers analyzing the behavior of semiconductors, we have plot- donotconstituteaseriousobstacleforthec-axiselectron ted the data in the inverse-temperature scale, since in motion. semiconductors the thermoelectric power is expected to Somewhat different behavior of the parent belinearin1/T withaslopereflectingtheactivationen- GdBaCo O compound provides a clue to un- ergyforchargecarriers∆ ,S(T)≈A±(k /e)(∆ /k T). 2 5.50 s B s B derstand the mechanism responsible for resistivity It becomes immediately clear from Fig. 10 that the only anisotropy. As can be seen in Figs. 9(a), 9(b), the compositionthatexhibitsaconventionalsemiconducting in-plane and out-of-plane resistivities stay virtually behaviorisx=0.500,withtheactivationenergy∆ ≈70 s indistinguishable from each other down to T ≈ 260K, meV being in good agreement with that deduced from where the FM-AF transitiontakesplace.17 Upon further the resistivity data in Sec. IIIB. Just a subtle deviation decreasing the temperature, the curves sharply diverge of the oxygen concentration from x = 0.500 (by merely and ρ /ρ grows from ≈ 1 at T ≥ 260K up to ≈ 22 0.001)qualitativelychangesthethermoelectricbehavior: c ab at 100 K. This indicates that the charge motion in S becomes almosttemperature independent at≈100K, GdBaCo O is very sensitive to the arrangement indicating that the electron transport is no longer gov- 2 5+x of Co spins, and it is the peculiar spin ordering in ernedby the band gap. It is worthnoting that the resis-

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