Table Of Content

Escobar-Alarcén, de ContreCrharsCo-hmPeiukean,nt ge-,W CoenrgdCe,ais rCtaars,ot -ilRlooCd,ar rriigluleCoz,a ,r Craarnbzaa,j al-Franco, AsaAkraawuaj,o -Osorio, L2.5,5 FE 1.r6,n4 s Eberl, K., 164 t, Dong, J., 19 Dominguez, J.M., 141 Dellera, F., 261 De Matteis, F., 150 de Avillez, R.R., 15 AA99.48n,, d rés, Cruz-VazqueCz.,, 1 Cruz, L.R., 15 CF2.r3,u5 z G2,.3 ,5C C 6h.8Ku .nS1,.g2 ,9, J1.1C7C.,D5, h.3 aH noChan, C.C., 84 go,n A1..7,,6 R6.,, S1.0J .CM,1. a5,s0 a J1l.3,b4 oCM 2n.a7iNr3,.r J1 P.e3,.n4 , oG1 ,4.1, C E22a.59,5m3 ,CLp 9 .as8,l , zCalleja, W., 134 adaCaballero-Briones, F.,, rnandez, BM2.r1,u6 nBS 2.er2,le2 ,n Bonanni, A., 41 naBernal, R., 1 n, BS1.e2,n9 aBecerril, F., 293 ckBaur, K., 222 a, Ballesteros, C., 113 Balderas-Navarro, R.E K1.7,0 J1.2,2 AA 2n.1,o6 AE1p 1.2n8c,90dh ,EA 2r e.l8aJnv7.dek ,es o,,, AJ2 l.7bM7e. Acquaviva, S., 266 ,l laAceves, M., 134 , EVIA ER e . , DE11.1i2,7a2 , z -Valdés, 129 23 6 -H , AO2l.9,v3 a rez-Fregoso, SPI0I:0 KivilahtiJ,.K.,6 4 4Nishimura, T., 170 EF011sH., Kinoshit.a, ,251 0J Shafai, T.S., -8p9 Nikl, M., 195, 195 .i,6nO., Kienz le, 164 Sel’kin, A.V., 227 o0Nakatsuka, O., 73 z9JK.e, rner, a222 Schmidt, O.G., 164 -Nakatani, T., 145 0B(e227 B.A., KazennovSchmid, M., 41 l0t53 S.Jun., Kang, r0Scarpettini, A., 28 a)MA9n.8u,0,SantuSc.1,c9 i51,,9 5 n MA91o.4uz4,Santana-AranMd.aA,. ,3 7 n -MS1225o.85MuJS.i,m enez, 9129 ,0z5SantanGa.,,2 35 ha37 ,M,,E l2r o-. ,8Jiménez, I., 277 t,ySansoLr.eEs.1,,8 0 7 ian nJergel, M., ix, 117, 122, 129, 129, 2}6 -ates- Acevedo. A.. 235 ,Sankey, O.F., 19 o MJ1,.3Jawo, T.H., 68 ,Sancrotti, M., 261 7r F Ma1.o2l,Sanchez-Juarez, rA., 1421 e asMA1l.1,oTI1,Sanchez, N.Ae., 247 7 r.s7 KM s3a,h0., 3oli, IA6 em .rk MJs6,iao.o4, b,wsIM1l aaRP1 n.aerMT11.,3ooBrr.4,8,i 4sIMu.,i1e 59y RAan.i e, ,nu aMT11.olxo,, , s.4,8t iceu ,,5 9aksneRZ1M , YM ,1e,,a.5i io.3 t, 9mvk,sHwan7g, tJ., 68 eiRiC2 h ,1AM.r4i-,i.0 ,ea7 n d, RCHnuertaJ-.R2,u3 9e las-, 2c aMV3.i8Aod,.é,3n2lnoH nHrach, R., cRP.i,b ot, 203 21v1 ,.MVz3doa ,.éa7ner HHorng, nR.-H., 84, ,z231 Regolini, eJ.L., 211 .MMid G-z,x.eea,G ,lHonzda, ReboTut.a, , L1., 92 987 la MM3e,vr.7en ac, lRR.a,m irez-BodHoly, V., 216 10 niMJ4ée.c9a,nz,K H., Hoffmann, A., ,Ramirez, d107 46 -MMi2 eLa.t4zis,t3Hirata, G.A., 4Ra9m irez-Rosales, D., 184 -sr M9J r9iL.4aai8L,,i,Hingrerl, c K., . 41 rt k,1GMa i,.0a,,n rHernandez-CIa.l,1 d59e r6én, Proto MLeLucia. 9tM15.5 .az8i,r, n Hanic, F., 129 Prosposito, tMJ P., 1150 e.ia1z1nr.3,TH2,,tMM .Pr2ieto, P., 113, 247, 28 2 a5 i.,a11n n,r6 d ,CMEP9t 29o. .4raiPortelles,J ., 49 88,,,i,rn 2 eMRt o Guinea, 2F., 94 tR., Pizzoferrato, .i,a150 4oDn 3n,M.Ee Guimpel, J., 1022 sa.,155 A., Piegari, z1a, j,6 nkMGA.u,i llén- CervAantes, 159 1oPP.i,a netta, .o222 8a,,v0h aGrigorievaN,. R., 2M27 K1m1951 95,A .R..P,h ani, 9,ao,9 e oGou2ldJ, R.D., 8M9 ,.151854 10 , J., M.RitGoanPzal.eez,r rone, 2ad ,7 d,HM 2rPerrone, A.., a 266 4iSc3.giGM 1,Pérez-Rodriguez, aeF., .o227 1 79 P.M., Lytvyn, llE3m,.- 2UGe ,MPérez-RJ.oFb.1l,8.e 4z , 8iz ,el , alGC11LO7 b.33A .,9 CentPéerneoz, 9cyi.9e,55thSa r , GvF2.Pereyra, oI., m176, t273 3JL.,6yhr.p,7,u 1ne, , a GM y,z4LA 2o.a 236 , J.L., Pena,1 oz.u1,l ri-,c 6o,c Garcia-Hernandez, M., 94, 98 ALParaguay hSFD..,, 2137 ,iul.e1, abvs6 GH24.a7,l, i ndo, 282 Ly-aE,JG.,o m ez, 1P7a9l acios ,é.R r5, poa9 Gago, R., 277 207 ecd23ML23 M., HerPn. andez, 7zh.3oé,,9a-,pL M i,L eo.x uz p,n- eFA13M6LAHaL.2uz35.0éz.,,2é,n9-, ,up L 7 FMLOCp d 2L14 ceé ..t.uOliva, A.I., 6 e94o9oe,Lzpa, e3 zrp .n-ne FCLM n22a,,eia.zoLe.255 O., O6l4 ea,T ., Laurila, 3t 6, z,,t-e,Ké16e a,,C .FF.e,r rieu, p 211 sk ,o207 L.3F.3, K., LOajstiramsa-M,a rtinez, e-i yzCsFalcony-Guajardo, C., o122 ,,a207 A., Lastras-Martinez, t bérFalcony, C., ix, 129, 134 cear227 B.V., Novikov, tal,20,3 S., Novak, EM7TK1s.243 P.M., Nogueira, .79rt,6G yr .11SWLEKsa,.195 195, K., Nitsch, .37.hsod,, 70,tt h aEKAJ 22ar,.ml.s86ba, i,to26 ,dn et aiv,o e ,, 373 Volofu me Index Author 299-300( 20003)7 3 Films Solid Thin www.elsevier.com/locate/tsf the n p, , a p a , e d SterSepna,Ss ootvoSa,o, tSeolsoa-,L erma, Strbik, V., 129 SD4t.1i, f tL1e.0r,2, M 2.1,6 S1.7,6 M., V6. , Solis, J., 137 SobotkMa.,,2 03 Sitter,H ., 41 SirenaM,. ,1 02 SiqueJi.rMo.s,, Singh,A .,2 22 Shmayda, W.T., 300 10 SF11.99o,55 m, ma, 496, 261 0 ez, nt, u a q l Vaz Vail Tamura, S u n i , L., 94 Vargas, R., 117 235 L., TA2r.8iB g.TY1,u.o8 ,bd9 6 a,, 3M.3, I., 64 TC2.a8Jv7.a ,r esTJ2.,a5, k1 ahashi, Yamamoto, Wuu, Wu, Werho, Wang, Villagran, TA1.i4,b1Vilcarromero , u rcVigil, io-SVidal, ilvVicent, er, Vélez, Index Author 189 T., 31 84, 68, D.S., 231 L.H., 222 D., 222 J., 293 M., 273J. , 235 O., 37 M.A., 113 J.L., PV.e, rdonck, 243 113 M., 373 Voloufm e 2 , , u a , z m n e Zapata-Toraires, oo on Yasuda, Z Y Y Z e l a y AZ2.o6,c6 Zeng, K., c 64 o, a, O., ix ZA4.e6,h e2M,3. , ZL2.73 S., 4aS3.m ,b om53 Sup.Y,. , 37 33, H., 7Y.3, ZelaO., 239 ZR1.a8,4m ZG22o.4a8r,72ma , b nroa-nUol,l oa, YJ1.a8M4n. e, z-Lim6n, y a - A n g e l , PII: $0040-6090(00)01458-9 evaporation, 277 Electrical conductive hard-carbon (diamond-like carbon) films Boron-—carbon-nitrogen compounds grown by ion beam assisted ganite thin films, 98 Carbides Influenocfet hem icrostrucotnu trhee m agnetoresisotfam nacne- films, 23 manganites, 94 (CdTe),_ (In,Te,), pseudo-binary in polycrystalline CdTe-In IntergranuCloaurl ombbar rierisn thinf ilmso f magnetoresistive method, 15 Electrical properties and measurements The formation of CdTe thin films by the stacked elemental layer l Cadmium telluride iifftwliasthermally annealed system, 10 Electricaanld s pectroscoprpoipce rtioefs a morphocuosp pesru l- Structuraolp,t icala nd electricaclh aracterizatoifo Inn /CdS/glass Electrical properties Strain gradients in polycrystalline CdS thin films, 6 Cadmium sulfide cwvL5oia3antr hciFadpot(Ltf oeihihPfarnauelineb tod)mnl s,tRaltp2iD Ts e tro7eegF ci Raw3rumtO-t tMpeobntfopbCsoTdbbCaS6rA,ihiiiifrt eoiafibe4ynPaheu,i tloaM eocrf trcrd et nEmrbn srfpBntfaDboah mw isisiu eihiCaoiitnal diees,itlrrfinrue nVcetrnmris trtff1 ea1roi si oyhaniyiiD1u0dne ndncse le le7 s en s mtrras iRb aoBsSoaecoIse,esml onlfatp,uifhnuna m a en atr c-atdp,l/lcl iuBktfbrDh eetClyccihisaaierrdysatdli-ccsfirci lumnSbtafepocC1p4fss r oa/e9atufdrr6d aonl r sstoo g Ilr ClsdiippeeTsotseaviIbotfaol,nditauzeo eirdthhfrlithfof nae,t ulcFrnarierri e b n uedsahmdTnut tatcrt, ndBos Dsoy scmeidiatiigyt ri:ag tei tr,o e r neenrusaspbionus,ltgHf12lcfradt,pon yrc ei iii24a gapi u nitlk col9cl3rh-otacmeutm ,da EcfdfffsTaotmotcodinbt sl brsr liolufhhlhnffo cer,neuoie e ailr-eefu a n crpodnp atcsm eortiPapopBFtDcoe m esmhsecranhefr)rnras id raoaticdig n oederia cpsdtn~nn,B tFpc ppbrmsbt2m ereo d.e aC)eup4aaeoyasrfoen- r-u.r7ardrn igcnpd tt(s Cdc—otfas eu—rndutiihofhatiCDttudraclh aracteries7t9i cs, re-Ccelie irara-ia Lsmnrtltscu( cl rbDmoo-s CiTiB,-thin sriiiaaoD-onsitTmtnhherfieutlcc uka-en lne—csiGes aAfoosinf l r m —nk) nokrcnn Lseg(adC mgen2bt d,CeummicroscopOy e5 eo fAotrocme ic -p)-1ot,rnloisvbp (hfci n isa-lyuOhozoturaclh aracteris7t9i cs, dikpCa p,eadrteo ,seEchm(cft ,mir TiB,-thin mHilrioadaisoitTmtfnhher fieutlcc uka-en lne —csGes aAfosin l m oe lae,cnmrirondmc ,aDdbanda s tstyhsetremma,l ly )luo m-annealed 1i 0 gr/ cnocinaNt)ncaeferromoapgtneitciacl mIn/CdS/glass nanostrSutcrtuucretsu,r al, ia ,t1ah0ndi7dn ecalhneadcr tarcictfaeillrm si zaotf ion rtolv -br neloAnnealing o of propemrattghoinene e st ic inlhooocfma ol gIennfeliuteiniecse dnnk eCreep 251m etdhevopadop,so irt ion _ is-uCp,e;rHm,a,g/nNe,pbt lyra osnm a 64S i,a nCdu betbwaerernide iTrfo aff u sisotcfna bhoielrCimhmteyie mcdiac lal Copper (diamond-like carbon) mceotanldliuzcattiiovn e fEhilalermcdst -riccaarlb on dilutoifoS ni Hi,In H,,17 6 iodides, odainudm iodidel ithiuimo diwniet,h treafat1ifae Slpf0drlnmfariu sraiod%da-H rdHyoemte Sie,e mep ig r o:shsH i tion Amorphous sul- coppearom fo rpphrooupesr stpiaeencsdt rEolseccotmpraiictc aelr ials Copper sppruotdtuerciendg , by lf2cii4akl3rem bs on 203 films, comofp osite moorfp hodcotfoiclhhtn mSoaEooaeth fefgnmr ue yftdtao eychen ctnadtetns-r e i stics ComposithAeym dorropgheonautse d carbofnil ms 216 irraldaisaetri one,x ocni mer multilAayogfe/ rCs o Sttrruocdteurse, 89 ealwfeiliplicCtlnCehuo-m haotbm s danhi l adnt luiocuctmyi aonni ne 239 eAllsecucatmttlrieirgonihdtni lgea,uss em r lsicgahttt ering, usinragt e growtMhB aEn d desorptthioeofrn m al Observation l2a3s9e r CdTe/InSbu rgasaMdrttioneeOBonhfd sbwg e Eos tr remhpra tvli aotni on 255 plasma, densithyi ga h using carobfo n evaporatioEnl AecFtrMon coatings, Carbon tered 282 stptprruuiontbpg-oes lrtoteginie csa l coatings, carbide oaMfne dc hanical t2e8r2e d sput- carbide tungosft en properties tribolaongdi cal Mechanical Adhesion 373 Volofu me Index Subject 301-306( 20003)7 3 Films Solid Thin www.elsevier.com/locate/tsf at]he odine, ioddei de, irlemast ed ioinotdtddhih iid uuemm Fluorine FluoridFeisl m FerromFaegrnreoetliecc tFreircrso electFraitci gue Boron-—carbcoonm—pnoigutrnrodbowsygni e onnb eaams si1s5te9d vacuhuimg,h ultirna annbeyaa slsiisntga nced esoroIpoxtnii-dboeen a ms urfacGea As 46 properties, arseniGdael lium A,, EE,, Ionb2aa e0nrai7dmor r uandidoaft t ihioCnna Ff,il mas s:t uodfyl ithogra+ph ic (001) GaoAfs spectra modulatedre flectancee lectrLoi-onpetairc b ombarIdonm ent films, G10a2 As 145 methdoedpvsoa,sur isitioinupogsrnf e iptlhamisrn e d Thidcekpnoetfehpn serds oe opLnfe,a crySet r itpehis,n M nO, phosphore leocxtirdogela ulmliinuems ceMnatn ganese-activated Interfaces Al,Ga, ,_l,aG yaer,s_,, As Ga,O,:Mn abunfdf er IA3n7s CharacteorfiZ znaSfteii lomgnsr oownnG aAssu bstrwaittehs Interface p4r6o 150 plosafCtoibI eihfiftroaelir r tunFamntahOrgmaondsiiocflf ai-iillgenlmedcsyl o a irnn pfdodryraear,te idn g (s, midoyf: eig ldyes asrufInfrared b1t,iao2ai lrp9somih 189 sputtenreitnrgo,n HaTsfsffdfnedil,oiln gruedec -rludop -ps Tcziornnacdn-usccpota-irdneognp te d pbmaryge -p ared motF ITBO po)filmsp amoPe srh) frrn srra ii oediecdn~poxidce tin Indium tpeo Ceueasnrra drdt1fttshsermaanllnye aslyesdt e1m0,B a—uiih2outiClcie2rpimnt s-u pStroupcatteniulcdrea caclhlt ,ar riocaIfacn lte /eCridzSa/tgiloan ss so ir,-Prnn o c(bgp1ftsBIndium oOih2e -uinli2r,pmSpdn- tFnanostrfuacbtruircea1 t7i0o n, e s ruirPi,roce lb—ccprocessing ts1mnafftsesiletuem’ citcroonnd-ubcetaomr IfInoI_r I -V oe-C ii0h anesnliS7nndarsdmnproce ss goopmtoiloI rrIsint u si —uofhnrfs nano -ncce oCtfghmga— by tplrMBE, nnoa41 ul ieuCua emg-rencnatontnp-type sgpreocwtntr oscopy g6ftPocaDoOiegsrdZieintffuTlf eeecr:teNan nccee Ionf —iciuhf0h nescteM/leeiCr adtp imnns eMNru rosmeassituIunr emecn ts e sa,usg-T i, cciOtcO tL5wvttnanostrfuacbtruircea1 t7i0o n, oie/3iaa uinret r rMocihisftL(topdaFengseImIfioIcr- opVrn odcueeclsstiIetsonuci. rt n rgo n-beam e zoihihPf ranas nliaeoueb otd) mnlt ts,piO Ts esemircIoInId-Vu ctor ieg ciaorutOtncteL5wvri68 v,acuuhimg,h oii 3iaao nect r LpFn cs(hittdofaproperties p-Si(100) arasP eEoIfourllnfo-te rsrcmiatl-ari ticiciaodlen in ohiihfn)ot,bnielue dTpi, nmlt s ie sger Ideality factor Orcuat,tet1r;i ii9 eoc9sn s Gmvtonof suhianfaro60f itlhmiPsno,M f NTc haanrda Dcetpeorsiiztaitoino n, bilr nods nmiFsotws eaua-r loops Hysteresits t bcafihsteaot etcn53 coLnac evnatrrwiiaottuhis o ns, rseesa,/suMpgeOr conducting Bi-Pdb-Sr—Ca—Cu-O tfilms, tt1h2i2n pLrao)pTeirOt,i es Fatigue (Pb, eeadinedl ectric ottfihhflie mn s d Experimental design Hysteresis euhdpesilvnigaasnhspig mot ary,a tion E25l5e ctron oca fa rbon 37 laybeurfsf, eArla n,dG ,aIG,na _,,_A,sA s films, 23 CharoaZfcn ftiSeglerrmo isoGnz w asanuAt bsiwsoi tntrh a tes (CdTe),_ ,(In,Te;), pseudo-binary in polycrystalline CdTe-In Heterostructures Evaporation industry, microelectronic2s1 1 gvaasp our, fZsteoietn lnhmOsa o nro l 137 profile analysis ahentde rostructureisuitsnnhts ere adi ned InfloufAe lnI,cnC ,eu F,ea nSdnd opoannt htrese spooftnh sine SpeecltlroioSfpsi sc,,o/oatSmGp iofeie:ocot clr,or m_yp osition Ethanol Heterostructure-base-transistor netron sputtering, 189 pbmspayaur gtentdee rtirnogn, r2.4f.7 Transcpoanrdezunictnt ci-ncIgo Tf-Oidl pomrspe epbdamy ra egd- pre- (DLC) Cchaarrbaocnt erizatiotfodnihfil i amnms o nd-like Etching rate Hard coatings chromium, 184 Preparatiaonnd characterizatoifo sno l-gelg lassesc ontaining 199 ESR properties, Gromwovtdaher i oatfth fiiinool nnnmss a nos-ufbasctertateeds , 46 Gmroodwet h Ion beami rradiatioofn thinC aF,f ilms:a studyo f lithographic films, 102 ISOVPE MCT growth, 28 Thicdkenpeeosntfsh dp ere onpocefLer aS t,ri, yeM stn hOi,n Assessmenoft a non-lineadri ffusive—convemcotdiveelf or the growth, IM28SC OTV PE Epitaxy Asseosfans omne-dnlitif nfeuasrim voefd—oetrchl oe n vective high vacuum, 68 Growthm echanism Electrical properties of Ir-silicide formation on p-Si(100) in ultra- 155 Epitaxial Ultraviolceota-tgifronlarga dsse edsrs u:r foapctei pcealr formannancosetr,uc tufraeb rication1,7 0 Graded coatings In situ’ electron-beam processing for III-V semiconductor rapitdh ermaanln eal7i3n g, Electron-beaml ithography thin filmsp reparedu singv aIrinoutsd eeprosfirtaieocmnaie tacholtds oi,1f o4T5 n is/a n dZ r/Si,_c,oGnet,awc/itStshi Manganese-activated Gergalmliaum niouxidme electroluminescent phosphor gvaasp our, Electroluminescendte vice s13e7n sor fZteoitn lhmOa nol deposition method, 251 InfluoefAn lcI,en C, uF,e a nSdn d opaonntt hsre espoonfts hein formed by i-C,H,)/N, supermagnetron plasma chemical vapoGr as sensors 302 Subject Index of Volume 373 MBEm94a nIgCbitnhanao irtnuMnrei ilartenogerrgmssaa ,bn n uCodcelfhaisa araerns1rbm p 8eaoou9tcnnt rtTcz dtoeiro-enrnnalMsr icdnipiaz-usnukgacgcptent,otta ei e-irotrdneIolionirognofnn nnpo tc fgherMan l oilda u pm geponntffalngechieaneeiel tndrnnm io r sezso itamtrrMtaieuaigvecgonets1fnneriu0 e tslr2taim eslics, z , gaf t9aith8nlii minost n,e m9a4n ganpMiamratneoegdapsn es,eru ttriiecem se Lnutmssbpfcliiip ayrnklur oemettocmtoEb dstshhnffooe ueeef c nntcr etedkL ihecienon atdengcwsln tnafft, ee e ihane c li ndrtmno rrs sio ctmasrLan uogiccnsta2A+EaEaoeul,0 n,r,ttr ,7d o rie mreLuocseliopn ,fenidd lcereLe uetelaislcrfern slatolc el2ica-tetaa3ganocsrer9htcpetotd terta- e inorccpisL etnci igagc,tth8 rtt9oe drpliCeinehson a,tngd Lh d eaualc2fdoti3 cli ymo(.psaCns(,nd eIiTpLunneaad,)etro,T t1a-_ei5 mbc;5eie ) tn,ea rrLmsyia rsre2alpoabr6usrl 6leas sfncoDrt iiefae ilt drpomr aPe4bonsil9nt,os de d/ enic b dSft;B ttihaeiySirliyp roomn Laons dybas e 5lsisTaet,trie 199 i dOo ,n Gromwotvdaher i oaftth ifioinnl sm s ceted Carlo Monte Kinetic 28 growth, MCT ISOVPE diffunsao inov-fel —icnoeAnasvrse cetsisvmee nt epitapxhya svea por Isothermal 231 films,t hin IrO, propermtaiteeasrn ida l process Formation IrO, 68 vacuuhmi,g h formatIiro-onsfi licidep ropertEileesc trical Iridium 277 evaporation, films pmsbr2paya.4ufr g.7te n (tdeeD rtLirCnog)n, If iTlOms tmhaeg netic 243 characteristics spectra wfiiltmhs ipno lycrystalline rbeya ctivPe LD onn ano-fa e 0) Dualitmye talox idse emiconductjournc—tPiNion n t heA l/ silicon Optoelectrondeivci ces Opticoamls pectroscoopfy n ear-surfaecxec itonisct ates,2 27 fa gchromium, 184 netPreparatainodno characterizaoft isoonl -gegll assecso ntaining retf1p50 sihriliesmn-Ormgsofaodiilninla-iifcmndgncsio yefa ererlldpt,a l o ryre ad ting s i vpbmIn, Ga,_,A s and Al,Ga,_e,bAusf ferl ayers3,7 rya e gpCharacto-efZr niSfziealg tmriso oownnGn a Asusb stwriatthe s a rfntfa1Optical properties eeaih0ndrlin7d mnr o po155 s osfr mt oarUcoppflsugecnrtet1Optical coatings uti0rie7impe sclotoIorans o hffnno,ghce fpa no lleemuwvLc5 rtoeia3oattnri gn ihiccceFadpot(Ltfe oeei hhifPannras,dpLu eilenb tod)etToto raslenm S,thhipN ffThioe ys pire eg riitc p Vn areuOcptie tte,Mpcisnnpr2Fker,iitn ;hiir9lidntsmeM Roceat o3maIototomceei eea nrrscn 2hhfnfnisasleArvniagse ee7 fc Omnssaodccs,n 7Mlr a- ,pitsw ee uBcogbiban oe, a teossogryeor rImvnons tCbitfoio raamna ciernhiapla2frstowomtgspe ilarb eu6tuinutenn snmrloi6lscoe ers eil-ac suiDtocnfbrsndr gettscoeiifeuesa u,ynrrio tlda amrrpt b sodarmrc Nerbo ab-nnsiseti ,osbnp du is t seOnicoilsvione2rg tf9ppt teeacnxfes2iihaa8te ir oc ad-7tlitn ico imserne inicIotmotmomtstns se-vtihahfnn,fia,rao scee ee lf t cnognu o lNirrsn-rnucaocoe fde snotagdo nnf1topcoefcia7arsyer enba0nut e r mocIsepfIsrsiinostorlIeutcir uutonIecma1s. rrNcd- tcti0teuaeiV-tu7ca cpiomsn r roolotoInfn1trsnaooeohfnifnnc,9ouihgscle s nfd 5epranmon tl - u elseTgsgaooCctmerub ,rcht pfrn ohstoue etirt tod-eInigcnaiiufow1 e c-cet iccem9trvelP unsts5 h ma (ruGoeb ,sTgsaooCctpr0feiIa, htpfrnohseo0 t,iArt od- e1IrNni uiw s)e -a accet v tPtsnshae ubo ,prdIa Structure deetermination of (Ti,AD)N/Mo multilayers, 2o87 ,gdgu rtOoaMr esrgaafhnbBisortStructure of Ag/Co multilayers on excimer laser irradiation, 216 tedsneoweEer e grtgmdrMultilayers phaa vt tlai eScmtooumrdppyoh soiltoeg y tfilms, o203 ooff sinea o llMorphological analysis neu cm- ifabrication, nanostructure 170 niusemIiIcfIoo-rnV d ucprtoocre sseilnseigtc uIt’n r on-beam mC nitrogen dtreatment, a3 3 sswtuirrtafhta ecse TecqIrumyaspltiratoly v ement Si(111) -ioZnnn Se ftsoihufleb m -s Inepitaxy Molecular-beam opUcflspoleaoutatrsr199 riter ffcriaoaasnvsubstrates, crnano-faceted ftovoGmihnafroli r omndis wae tt iho ns :lgie mso a ldynamics Molecular necsteu-41 MBE, by ,bg -rpagrown ZnTe:Np -tyopfe spectroscopdyi fference reflescittauIn nc e id/RSocenSiuod(MBE) epitaxy beam Molecular iO sO ,e,/c203 films, coomfp osite moorfp hoSltougdyy SoinModelling d substrates, 293 procensists,rti iende li ng charpalctaesrmMiasi tcircos wave plasma Microwave 243 spubtyte ring,p rodfiulcmesd carlbiokne diaomfo nd- charatchtee roins tics content methtahne eof Effects Methane thfeo r model 134 sensor, radia atioans structu/reS i oxide rich /siAllic ont he in junction semicoonxidduec tomert—aPlN Duality structure semiconductMoert al-oxide sputterreeaocdft iv28 growth, MCT ISOVPE the for model diffusive—convectiven on-lai near of Assessment telluride cadmium Mercury ultirna - p-Soin( 10239 scatterinlgi,g ht laser using rate growth MBE and desorptiont heromf al Observation 303 373 Voloufm e Index Subject olattrianvgiso leptt-igcral erformance, or ausrefrasc:e a d e d Propane Plasma Plasma Photoreflectance Phase RBSpoC1 9frd oIpvaestosTnethilfnth,rerbe udeTsu rctd oRccetaiyratart,e eutmois,trtno a iaeinlcnrca,ai l 17f0an barniocsattirounc,tn ulre g sIefImoIipr- crVooe scnlIiedtenus uc.s ctitrnoogrn - beam Si, 164 tdonou tms qGueaC na--Gnoi edfn pdruooapcpnteeiddPrc rtaeilp easr ation Quantum dots 1sgpotfT4ieiaxrhn1lnsiio ms sgndp oae earsn-sn s5cLvwb,eo3aoia a r trn sshicftL(topdaFe oihehPifarandliueeb n)otd mnsl ,tTpi Ptfs e rieihg LcliarOutTmntt,e2mdr ii; 5ieeeo c1pt sn ovcpsibfh ssahl-youo,ipeaC rpd tomfc(hcEs,m,eiilriaodamHe rloe crnira,dmmcnbaddapad ,s ta ounrlem- )rgocnd poci/n2pdhauccote) EoncaN 5efisleliae vasdr,5 ngilasevratt-b s nhssc1HiSoedbpilroign 7iftmi oi,ooion t l6 rnanrH,nk nyu og, HdralfpaSafa1, et n a a-eurintri 0 it ySprodiogHo%eeioedap momnh, r: sern n sHipod t2ponsiccp Mtnir9hiselie toa3oisaceprcr ntsPslrriea ii lmodosconaaicstwfng2sn, eeia 3gm rlsv mias(e,pipsCs i,(noCs tdn IliedgTPviycuT nhaecsde,ypr -To)soyIet8i-,sr,r9ncbt_ )o a ai p,dlwaeCilfln he lniielloaste latiun,rPcmhdhnf md-syh a ei iu tl lEcEAnmhoaa2+s,,,tiac0nr , iuly7do ooma (GosmreLucn 0nfpeliona0 yef einddA1clcanem us)ettnaeel crr ir aataof n1sa -it9elnoue5 mcpoCcg rdstTsoaetprso,e htfnh ito -Iir mdeciwne-uf 1ce t icvP9snhlta5 bmt,u pIsTgsaooCct rso,htpfrn,hose irrt ode - InuiawtdoS 1e - cciontt6uvP,tst 4hema u bPopqs ,dCaoGaG prprurI f nn-eeetooae, dd ii prnp P cnea-aahdrt rlotuea poC1itcdt9frdeoei osITlsdospteavo nhtu ntehlifn,uer mreeb dduTo itcrt yceritanrt ,erteaeusoist,nSrCsoTdbbCa6tnoi sia aif4nhaaecu,inilcrf b d e te catd,irfaP mw lin liiulho ieicesa antceriegyscs1 oan r 8ehnl a4 r m Pacosgcoslfohnrom a ladnesis-rP tppusgaaaAeemecirScsl,twvLcn5a t eia 3oiatrrtr nn iohiicgFadpot(Ltfos ozeiihhP farnnacualeiben otd )omslnt, tpiP Tspe irega ciyoarrut Ontater ,eii iloe ce snc159 st,r iGaAs surfaceo xide desorptionb y annealingi n ultra high vacuum, c manganites, 94 IntergranulaCr oulombb arriersi n thin films of magnetoresistive Oxides thin films prepared using various deposition methods, 145 Manganese-activated gallium oxide electroluminescent phosphor Oxide phosphor applications, 84 Characterization of sputtered Ta—Ru thin films for ink-jet heater Oxidation rich oxide /Si structure as a radiation sensor, 134 SiGeC Sensors PreparatiIomn pSrio vement In (CdTe),T_h eoretical Observation Electrical qGCaGopoapfurnn-eet oaddi ipn l ncea-dayr ulet3tsnaws cri t3uriiseerr tet dasfharsSofZoqctit a niruhitunfonec lybea( mgsSmes -l1ee est i1nn a t1t ly),1s raas/or s ie3Sxta cni4irdjhDAs duistmoi uuloecanhxeenar/ tt eitm,clusi da itroiieletinlc yo io4Mb nc1ny Bo d nEgZposdrsu ,if-ieprnct tff eouTtylf2fc wepeeoi3tnlecr: rr mt eN,pipCo—sann(os,d sPnc Il eTccpCeNnyo1ueoer ,d c9fd~p TorI eo-ypynvaestos,-I es,thifl;tnrbntre) beTudtai u ,rcde1 ilnc aty ,letatr is,urionisailiwtffr onyiiooeoirianoni dlddl dtetddacspacemii,ihahsEao i l rspodn mditu lfn uoeeeplueeeo d,-p,cmpm dcrS et teeprrrrmthiols l2ciiicsoa3ageaccus9lhtsooets urgMadtot rpn aes fnher iBdtr idesoceiuEn rSow ngcmrt Eg taph,Mfn1lot a7 airb0nospr sIsefIon irionIesl cotr ItemaucSg tr-cieeriuVtclsooc rfoswnStdo1t-oinit,o6nuu,onn dht4 mrrPopqg-su oGCaaG egpru r bcfnn-ee taoaee tddiin pSnpa o cniee-amarzdrl rl i tufa hv6nic-ti8ageeai g cssdohuipofIop us nrln fn-roue-t SormsSmripbmia,cb(ael-ahl 1rir toicr0tiitni0iodtge)eenrk s films, y117 bsaucpkesrccaotntdeurcitnig ng analysis RoBfiu -tbhaesrefdo rd backscattering Rutherford applications, 84 sputtered ink-jet heater CoTtffiohfhalri a—m nrs Ra uct erization Ruthenium Structure determination of (Ti,A)N/Mo multilayers, 287 Roughness laser light scattering, 239 dguserisonowgrt pht ion OotaMrafhnbBt edseEr e mr avla tion RHEED 273 templeorwaa tt ures, RF-PECVD by obtfialtimhnsie nnd i trbioodrfeo n propeMreticehsa nical RF-PECVD dpeaproasmiettieorns , t1h8e0 qDmuaeagplneietntyd reonnc-ys putteSiC fooriefnla mc tive sputtering magnetron RreFa ctive IrO, films, 231 thin sputrteoeafrc teidpv re opmearattneidreip sar lo ceFsosr mation applications, 84 sinpku-tjteetr ed CoTtffhiohfehalri aa—m ntrs Rea ruc t erization Resistivity 227 statese,x citonniecoa fr -sursfpaecceO tprtoisccaolp y by MBE, 41 spg-prteoycwptner oscopy IsrdoZinfeint ffuTlf eeecr:teNan nccee spec. Reflection EEA,,,, aa20nr7do und + (001) GaAosf spectra modulated reflectance electro-Lopitnieca r measuremedniftfse rence Reflectance IrO, thin films, 231 sputrteoeafrc teidpv re opmearattneirdei psar lo ceFsosr mation sputtering Reactive method, 15 by layer TfCtftseihhtlohdlieaereTmn cmm s ekea entdti aoln of Reaction kinetics Structure determination of (Ti,A)N/Mo multilayers, 287 SoIV3ufn7ob d3lje euxcm te r e d Strained-layer Silicon Silicon DepositioRne latioTnh eD eposiBtai,o n SpectroscIonpfilcu ence The Thin ApplicatiDouna lity DependenHciyg h InterfacialE lectrical pulsed in tural and and laser a-axbiest cwheaerinanc ftleureinsPcttei/ c;SsiS, r);TmiicOrp,ro oeflielcet ronics infSlpuuetntceer ing 150 Sol-gel film Silver wafeorixrci hdm ee tal carbided epoSisliitcioonn Silihvciaigdcheus u mS,i licide of 123 ande lectrodes, heterosoloftc raulc tures f1i0l2m s, f1i1l7m s, Spyprroalyy sis tin dSoiplvienrg of surf/aScie s Soixliidceo n reactions properties ablactairobno, nf ilms of characttehirni zationa naleylsliisp sometry of Sdiizseto rxiibduet-iboan sed synchrotrooxni de of Sluabse-rp icmoicsreocsotTnirdBu ,c-ttuhrien pSrtorpuecrttuireasl inhomogeneities a8p4p licationTsi,B ,-thin structure reactive rate 68 films 266 nitridea nd 79 49 induisnt ry, Selpleicptsroomsectorpyi c semiconductor—PNa -Si:H of of Stdo1io6nu,t4 ms superlattices, depositeds traoifn ed ct7hu9ar rala cteristics, propane as magnetron-sputterTeid/ Ir-silicide film Si,Ge,_ film radiatiao n layers films and thicokfn ess 211 thicknbspeo2ypys3brrs 5toa layyi sniesd, im2n1id1cu rstoreyl,e ctronics radiation dpt1eah8pre0oa smiettieornHSsdoi1 ,i,ni7f H, l6 ,u t ion ra7tan3hpn eieardanm ldai ln g, PMNT by heterostructuorn es gas from Zr/Si,_,fGoer,m/aStiio n by stSdihotnegmoolanreyie nr -Wohlfarth 113 superconductingP LD ,/Si: the sensors, to reactive on thin on a magnetic SLSRyatanbadconihrfaraototritodorr noy n on Smcfo2otoiof0flumr 3mdp psyo,h soiltoeg y TXRF sensjourn,c tion pure metfaillm—s,G aSAisO ,/Si tool scosw2uin2aorl 2fnfi etcarocan em si,n ation metal—GaAsgv fZste1aaoi3etsnp l7nh omO sau o nrro, l 141 scosw2uin2aorl 2fnfi etacrocan em si,n ation SiC SiH, on sub-picosecond for fntfa1eahi0nriln7drnmo sos mtarugcnteutriecs , analysi1s3 4 in and p-Si(100) 60 usedc ompositiporno perties the film contacts ct properties from je RuO,/Si Al quality ub struc- itnh e struc- mofe tal /silicon 1a 0% with uilnt ra- ex S of AsamortTonpyofafeaXpn dtllcRiayihalsFcrt i aiosott nir dp,LooTototraenSnhhffhoy pi e ripn ecye nkr,dntsiMCoTtffheeinpnihofehskeanulir aOa-sstc—mn jtr , st eeRea e t rucr t eedr izatioop((SaotfnprCZihtfn todlnir dipmnuOO ces c)a) rtl, tdruAIC tIoFaSoto_ireonluhhnffnenne,,as,pi,e f ds l pna l onuntesbassnRoBnaeuc fiuac pe -tlk ebyhsraseccisrasoeft ndot derpashtuaiuirnrdnnhtesncoai ertedftlnSSec. aide oatfyi/gilpoil oo rsfS,n lemneorii oGgi ec:l psse p dt ot, srs_roo iumsctectitdOsioumaoifryornprninonyelgcil efd , -aomcsri gsnr a fe iprilcoee ardd la ltyi ng AmiloeSo2urganft1xlrs r6c/taeu idirCcm ilotaeaut ryrie eor ns, on Ind Total Tl, Titanium Tin Thin Thermomechanical Synthesis Voloufm e PreBpaar,aCtaiCTouhn,e O ,, InterfaTchiailn The The TranspParreepnatr ation Mechanical Structural Chemical OrganicallIym provemGeanAts Optical Relation RutherforRde latioBni -Pb-Sr-CEale—cCtrui-ca—lO /MgoO reflbfeiaclstmefdiside,ol npm oss itedtc uhraarilan cftlbeuoreriniscdteie csrs e,a cTtiitoftaniinsnli motu hxmii ndpl eau slesre df 1i9l5m gs,r ofw1i9tl5hm ,gs, r ownspetuthtr,to enr cihnrg,o miFuiml,mtfihs li mns Tfihlimn 159 and applicasttiaobTnialsi,nt ty al1u5m0 and 159 surfaces pectraion-s acxboiepst ySw uepeernl attices ain- axbiest ween 1 ffiidlema sn dS ulfi373 des X-ray and oxifdiel-mbsa sed structusrter uctucroen 1d8u4c atnidn g prepared properties modcihfaireadc terization 123 f1i1l7m sb,a cksca12t3t ering treated fluo1r2e9 sfcreonpmcr eo pfielrmtsi esoT fi B,-thin ablation, characterization propertiedsTe hseorrmptaoilpo taniTn chnaele8r a4ml ianlg of tinh e Sturrefaatcmeoe xnitmdS oeur rpfahcoel ogfyil mmsi crostructuSruep efrilcmmosin cdSruuocpstetorrcruoscn tduurcet ivitsype ctroscopic fluorides 79 of and and 189 using Ta sol-gel crystal desorpotfi on and and with Ti/ propan2e6 6 zinc-co-doped of properties diffusion nearSaistn-unatsrdteufs errausfpcf aeeacr cele a ttices, superlattices, iodine, of film rat7an3hpn eieradamn ladil n g, optics optics various boron films quality analysis supSfBeuiirpl-cmebosra ncsdoeudnc dtpuircnotgpie nrgti es precursor by fsourp Berac~oCnad—uCctutih-ni(cgOk n,e ss Zr/Si,gsea_ns,s Goers,,/ Si oCfs I-PboCIfs, I -PbIIT,O osfo l-geld epositiotnRal2et 7oFm 3wp- neiPrtarEitCdueVr eDs , sbpo2ypy3brr 5toa l(oayyfi Zs nniesOd,) ,(CdO)bb,aer_tr,wi eeer n incorporatZofin nSge annealeixncgi ton1i1c3 sanudp ercondBoufic -tbiansge11 d3 sanudp erconductingiloi dtihodifeu m on films thin amorphous films in metal—GaAs 141 co-evacpoo-reavtaeppdro erpaatregedld a ssesm ethods, films nts3swair tu3itrer traafhtota egcmseee n n t, ultra states, thin and Cu an on superconductingfi lms, contacts sodium Tl- obtained and infrared Si(111) high 227 containing copper and 145 thin properties propert1i2e2 s F) by Si, vacuum, Hg-t hin struc- with thin thin mag- films 64 dye, sub- iodide, by sul- Dbsnocfreuyiiefapb tla rrom-cbisstpod iiienvtc eio osne cond pMgeoaahxllnoielgsdcieaptu nhrmeoo slrue m-iancetsicveantthdbaveGsuoi ineyalnuxdagns t rci hAreofdua arsaeu lpc meit, ni go n isTtffhConphioefhkauilr a-at—nm jtr steRea etrucr t eedr ization n e g o r t i n - n o b RuO,/Si SiO,o/n Si PLDb y deposiftieldms thin ;Sty5BTaiyO, ; films, 23 ,I(CdTe,)(,i_n ,Tpes;e)u,d o-ibni pnoalryycr ysCtadlTlein-eI n nG agporlaydcireynsttsa lline films, CSCt6ht dirSna in in ,h_a,wsrX-Ray diffraction evaporation, tiAa277 rtcsahtI t assisted beami on by grown compounds Boron-careemsrp iZrznoaSvnsX-tRay absorption epeei utomtrncTetocoatings, orteredn 282 ennart dni spcuatotrufp-bn r tigaordsnpieMtedb eeor cnlt hoigaeinsc iacla lunsgcp,ta Wear irnerIgnne tta ecZrtifiraogZfccmcoomrppohsoiltoeg y Study nfilms, ioo2ff0 3 ainoslsan mO lAoI i Unfolding process lfnu, fm lZo uxieinndcce tered coatings, 282 e dStructure ptspruuontpg-es rtteine s tribological Mcaercbhiadnei cal aofn d XRD Tungsten thinIrO, netron sputtering, 189 Tzpirrneacpn-ascrpoea-drd eonpte d cbmoayng d-u cting Formation IfiTlOms Transparent conducting oxide superlattices, a-axis i1fa1ni21n l33dm s Structural Relation between microstructure and superconducting properties Structoure and Pt/Si electrodes, 49 Bay ;Sto5TiO; thin films deposited by PLD on SiO,/Si RuO,/Si filmdse pTransmission electron microscopy contamination on silicon wafer surfaces, 222 PreparationApplication of synchrotron radiation to TXRF analysis of metal and Pt /S 306 Subject Index of Volume 373 3lbAaau7nlyf d,ef wsGogfZoreGiinufsrnarla t b,oSA m hs3tsna,wess t 3uri_ n r r et ,afarsSofZoqctitaAtoinruihufnnecml ygbe(as Ssemse- 1le est 1inn a t1t ly), 1 89 mbpfIziariyTlnge OcmZIc-ps onT- a -c rOardt7oena o3h-pnd peied erwcZaTodaomdiofn ilrpt na di//ehtl n dS a g ci,t,1vets so3eat_ 7nhp, saotortodSaFCIGonunhhfneunneoer,ieor ,sd p n, l, p a / onSntsise 287m ult(oiTfl aiy,eeArts)e,Nr m/iMnoa tion 231 films, proceasnsdm aterpiraolp erotfir eeasc tsipveu ttepspheocttoreolseccotpryo n X-ray spyprroalyy sis, by 235 obtained fthin (ZnOof) ,(CdO),_, propertieso pticala nd fA g/Cmuol tilaonye exrcsi mlaesrei rr radia2tion, films, b12a9s ed osiftreofdml uorifdoers su percondTlu-ac ntdi ng a nd propertieso f precursorB a—Ca—Cu-—(OF,) i electrodes, 49 red ilms 16 Hg- thin

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Escobar-Alarcén, de ContreCrharsCo-hmPeiukean,nt ge-,W CoenrgdCe,ais rCtaars,ot -ilRlooCd,ar rriigluleCoz,a ,r Craarnbzaa,j al-Franco, AsaAkraawuaj,o -Osorio, L2.5,5 FE 1.r6,n4 s Eberl, K., 164 t, Dong, J., 19 Dominguez, J.M., 141 Dellera, F., 261 De Matteis, F., 150 de Avillez, R.R., 15 AA99.48n,, d rés, Cruz-VazqueCz.,, 1 Cruz, L.R., 15 CF2.r3,u5 z G2,.3 ,5C C 6h.8Ku .nS1,.g2 ,9, J1.1C7C.,D5, h.3 aH noChan, C.C., 84 go,n A1..7,,6 R6.,, S1.0J .CM,1. a5,s0 a J1l.3,b4 oCM 2n.a7iNr3,.r J1 P.e3,.n4 , oG1 ,4.1, C E22a.59,5m3 ,CLp 9 .as8,l , zCalleja, W., 134 adaCaballero-Briones, F.,, rnandez, BM2.r1,u6 nBS 2.er2,le2 ,n Bonanni, A., 41 naBernal, R., 1 n, BS1.e2,n9 aBecerril, F., 293 ckBaur, K., 222 a, Ballesteros, C., 113 Balderas-Navarro, R.E K1.7,0 J1.2,2 AA 2n.1,o6 AE1p 1.2n8c,90dh ,EA 2r e.l8aJnv7.dek ,es o,,, AJ2 l.7bM7e. Acquaviva, S., 266 ,l laAceves, M., 134 , EVIA ER e . , DE11.1i2,7a2 , z -Valdés, 129 23 6 -H , AO2l.9,v3 a rez-Fregoso, SPI0I:0 KivilahtiJ,.K.,6 4 4Nishimura, T., 170 EF011sH., Kinoshit.a, ,251 0J Shafai, T.S., -8p9 Nikl, M., 195, 195 .i,6nO., Kienz le, 164 Sel’kin, A.V., 227 o0Nakatsuka, O., 73 z9JK.e, rner, a222 Schmidt, O.G., 164 -Nakatani, T., 145 0B(e227 B.A., KazennovSchmid, M., 41 l0t53 S.Jun., Kang, r0Scarpettini, A., 28 a)MA9n.8u,0,SantuSc.1,c9 i51,,9 5 n MA91o.4uz4,Santana-AranMd.aA,. ,3 7 n -MS1225o.85MuJS.i,m enez, 9129 ,0z5SantanGa.,,2 35 ha37 ,M,,E l2r o-. ,8Jiménez, I., 277 t,ySansoLr.eEs.1,,8 0 7 ian nJergel, M., ix, 117, 122, 129, 129, 2}6 -ates- Acevedo. A.. 235 ,Sankey, O.F., 19 o MJ1,.3Jawo, T.H., 68 ,Sancrotti, M., 261 7r F Ma1.o2l,Sanchez-Juarez, rA., 1421 e asMA1l.1,oTI1,Sanchez, N.Ae., 247 7 r.s7 KM s3a,h0., 3oli, IA6 em .rk MJs6,iao.o4, b,wsIM1l aaRP1 n.aerMT11.,3ooBrr.4,8,i 4sIMu.,i1e 59y RAan.i e, ,nu aMT11.olxo,, , s.4,8t iceu ,,5 9aksneRZ1M , YM ,1e,,a.5i io.3 t, 9mvk,sHwan7g, tJ., 68 eiRiC2 h ,1AM.r4i-,i.0 ,ea7 n d, RCHnuertaJ-.R2,u3 9e las-, 2c aMV3.i8Aod,.é,3n2lnoH nHrach, R., cRP.i,b ot, 203 21v1 ,.MVz3doa ,.éa7ner HHorng, nR.-H., 84, ,z231 Regolini, eJ.L., 211 .MMid G-z,x.eea,G ,lHonzda, ReboTut.a, , L1., 92 987 la MM3e,vr.7en ac, lRR.a,m irez-BodHoly, V., 216 10 niMJ4ée.c9a,nz,K H., Hoffmann, A., ,Ramirez, d107 46 -MMi2 eLa.t4zis,t3Hirata, G.A., 4Ra9m irez-Rosales, D., 184 -sr M9J r9iL.4aai8L,,i,Hingrerl, c K., . 41 rt k,1GMa i,.0a,,n rHernandez-CIa.l,1 d59e r6én, Proto MLeLucia. 9tM15.5 .az8i,r, n Hanic, F., 129 Prosposito, tMJ P., 1150 e.ia1z1nr.3,TH2,,tMM .Pr2ieto, P., 113, 247, 28 2 a5 i.,a11n n,r6 d ,CMEP9t 29o. .4raiPortelles,J ., 49 88,,,i,rn 2 eMRt o Guinea, 2F., 94 tR., Pizzoferrato, .i,a150 4oDn 3n,M.Ee Guimpel, J., 1022 sa.,155 A., Piegari, z1a, j,6 nkMGA.u,i llén- CervAantes, 159 1oPP.i,a netta, .o222 8a,,v0h aGrigorievaN,. R., 2M27 K1m1951 95,A .R..P,h ani, 9,ao,9 e oGou2ldJ, R.D., 8M9 ,.151854 10 , J., M.RitGoanPzal.eez,r rone, 2ad ,7 d,HM 2rPerrone, A.., a 266 4iSc3.giGM 1,Pérez-Rodriguez, aeF., .o227 1 79 P.M., Lytvyn, llE3m,.- 2UGe ,MPérez-RJ.oFb.1l,8.e 4z , 8iz ,el , alGC11LO7 b.33A .,9 CentPéerneoz, 9cyi.9e,55thSa r , GvF2.Pereyra, oI., m176, t273 3JL.,6yhr.p,7,u 1ne, , a GM y,z4LA 2o.a 236 , J.L., Pena,1 oz.u1,l ri-,c 6o,c Garcia-Hernandez, M., 94, 98 ALParaguay hSFD..,, 2137 ,iul.e1, abvs6 GH24.a7,l, i ndo, 282 Ly-aE,JG.,o m ez, 1P7a9l acios ,é.R r5, poa9 Gago, R., 277 207 ecd23ML23 M., HerPn. andez, 7zh.3oé,,9a-,pL M i,L eo.x uz p,n- eFA13M6LAHaL.2uz35.0éz.,,2é,n9-, ,up L 7 FMLOCp d 2L14 ceé ..t.uOliva, A.I., 6 e94o9oe,Lzpa, e3 zrp .n-ne FCLM n22a,,eia.zoLe.255 O., O6l4 ea,T ., Laurila, 3t 6, z,,t-e,Ké16e a,,C .FF.e,r rieu, p 211 sk ,o207 L.3F.3, K., LOajstiramsa-M,a rtinez, e-i yzCsFalcony-Guajardo, C., o122 ,,a207 A., Lastras-Martinez, t bérFalcony, C., ix, 129, 134 cear227 B.V., Novikov, tal,20,3 S., Novak, EM7TK1s.243 P.M., Nogueira, .79rt,6G yr .11SWLEKsa,.195 195, K., Nitsch, .37.hsod,, 70,tt h aEKAJ 22ar,.ml.s86ba, i,to26 ,dn et aiv,o e ,, 373 Volofu me Index Author 299-300( 20003)7 3 Films Solid Thin www.elsevier.com/locate/tsf the n p, , a p a , e d SterSepna,Ss ootvoSa,o, tSeolsoa-,L erma, Strbik, V., 129 SD4t.1i, f tL1e.0r,2, M 2.1,6 S1.7,6 M., V6. , Solis, J., 137 SobotkMa.,,2 03 Sitter,H ., 41 SirenaM,. ,1 02 SiqueJi.rMo.s,, Singh,A .,2 22 Shmayda, W.T., 300 10 SF11.99o,55 m, ma, 496, 261 0 ez, nt, u a q l Vaz Vail Tamura, S u n i , L., 94 Vargas, R., 117 235 L., TA2r.8iB g.TY1,u.o8 ,bd9 6 a,, 3M.3, I., 64 TC2.a8Jv7.a ,r esTJ2.,a5, k1 ahashi, Yamamoto, Wuu, Wu, Werho, Wang, Villagran, TA1.i4,b1Vilcarromero , u rcVigil, io-SVidal, ilvVicent, er, Vélez, Index Author 189 T., 31 84, 68, D.S., 231 L.H., 222 D., 222 J., 293 M., 273J. , 235 O., 37 M.A., 113 J.L., PV.e, rdonck, 243 113 M., 373 Voloufm e 2 , , u a , z m n e Zapata-Toraires, oo on Yasuda, Z Y Y Z e l a y AZ2.o6,c6 Zeng, K., c 64 o, a, O., ix ZA4.e6,h e2M,3. , ZL2.73 S., 4aS3.m ,b om53 Sup.Y,. , 37 33, H., 7Y.3, ZelaO., 239 ZR1.a8,4m ZG22o.4a8r,72ma , b nroa-nUol,l oa, YJ1.a8M4n. e, z-Lim6n, y a - A n g e l , PII: $0040-6090(00)01458-9 evaporation, 277 Electrical conductive hard-carbon (diamond-like carbon) films Boron-—carbon-nitrogen compounds grown by ion beam assisted ganite thin films, 98 Carbides Influenocfet hem icrostrucotnu trhee m agnetoresisotfam nacne- films, 23 manganites, 94 (CdTe),_ (In,Te,), pseudo-binary in polycrystalline CdTe-In IntergranuCloaurl ombbar rierisn thinf ilmso f magnetoresistive method, 15 Electrical properties and measurements The formation of CdTe thin films by the stacked elemental layer l Cadmium telluride iifftwliasthermally annealed system, 10 Electricaanld s pectroscoprpoipce rtioefs a morphocuosp pesru l- Structuraolp,t icala nd electricaclh aracterizatoifo Inn /CdS/glass Electrical properties Strain gradients in polycrystalline CdS thin films, 6 Cadmium sulfide cwvL5oia3antr hciFadpot(Ltf oeihihPfarnauelineb tod)mnl s,tRaltp2iD Ts e tro7eegF ci Raw3rumtO-t tMpeobntfopbCsoTdbbCaS6rA,ihiiiifrt eoiafibe4ynPaheu,i tloaM eocrf trcrd et nEmrbn srfpBntfaDboah mw isisiu eihiCaoiitnal diees,itlrrfinrue nVcetrnmris trtff1 ea1roi si oyhaniyiiD1u0dne ndncse le le7 s en s mtrras iRb aoBsSoaecoIse,esml onlfatp,uifhnuna m a en atr c-atdp,l/lcl iuBktfbrDh eetClyccihisaaierrdysatdli-ccsfirci lumnSbtafepocC1p4fss r oa/e9atufdrr6d aonl r sstoo g Ilr ClsdiippeeTsotseaviIbotfaol,nditauzeo eirdthhfrlithfof nae,t ulcFrnarierri e b n uedsahmdTnut tatcrt, ndBos Dsoy scmeidiatiigyt ri:ag tei tr,o e r neenrusaspbionus,ltgHf12lcfradt,pon yrc ei iii24a gapi u nitlk col9cl3rh-otacmeutm ,da EcfdfffsTaotmotcodinbt sl brsr liolufhhlhnffo cer,neuoie e ailr-eefu a n crpodnp atcsm eortiPapopBFtDcoe m esmhsecranhefr)rnras id raoaticdig n oederia cpsdtn~nn,B tFpc ppbrmsbt2m ereo d.e aC)eup4aaeoyasrfoen- r-u.r7ardrn igcnpd tt(s Cdc—otfas eu—rndutiihofhatiCDttudraclh aracteries7t9i cs, re-Ccelie irara-ia Lsmnrtltscu( cl rbDmoo-s CiTiB,-thin sriiiaaoD-onsitTmtnhherfieutlcc uka-en lne—csiGes aAfoosinf l r m —nk) nokrcnn Lseg(adC mgen2bt d,CeummicroscopOy e5 eo fAotrocme ic -p)-1ot,rnloisvbp (hfci n isa-lyuOhozoturaclh aracteris7t9i cs, dikpCa p,eadrteo ,seEchm(cft ,mir TiB,-thin mHilrioadaisoitTmtfnhher fieutlcc uka-en lne —csGes aAfosin l m oe lae,cnmrirondmc ,aDdbanda s tstyhsetremma,l ly )luo m-annealed 1i 0 gr/ cnocinaNt)ncaeferromoapgtneitciacl mIn/CdS/glass nanostrSutcrtuucretsu,r al, ia ,t1ah0ndi7dn ecalhneadcr tarcictfaeillrm si zaotf ion rtolv -br neloAnnealing o of propemrattghoinene e st ic inlhooocfma ol gIennfeliuteiniecse dnnk eCreep 251m etdhevopadop,so irt ion _ is-uCp,e;rHm,a,g/nNe,pbt lyra osnm a 64S i,a nCdu betbwaerernide iTrfo aff u sisotcfna bhoielrCimhmteyie mcdiac lal Copper (diamond-like carbon) mceotanldliuzcattiiovn e fEhilalermcdst -riccaarlb on dilutoifoS ni Hi,In H,,17 6 iodides, odainudm iodidel ithiuimo diwniet,h treafat1ifae Slpf0drlnmfariu sraiod%da-H rdHyoemte Sie,e mep ig r o:shsH i tion Amorphous sul- coppearom fo rpphrooupesr stpiaeencsdt rEolseccotmpraiictc aelr ials Copper sppruotdtuerciendg , by lf2cii4akl3rem bs on 203 films, comofp osite moorfp hodcotfoiclhhtn mSoaEooaeth fefgnmr ue yftdtao eychen ctnadtetns-r e i stics ComposithAeym dorropgheonautse d carbofnil ms 216 irraldaisaetri one,x ocni mer multilAayogfe/ rCs o Sttrruocdteurse, 89 ealwfeiliplicCtlnCehuo-m haotbm s danhi l adnt luiocuctmyi aonni ne 239 eAllsecucatmttlrieirgonihdtni lgea,uss em r lsicgahttt ering, usinragt e growtMhB aEn d desorptthioeofrn m al Observation l2a3s9e r CdTe/InSbu rgasaMdrttioneeOBonhfd sbwg e Eos tr remhpra tvli aotni on 255 plasma, densithyi ga h using carobfo n evaporatioEnl AecFtrMon coatings, Carbon tered 282 stptprruuiontbpg-oes lrtoteginie csa l coatings, carbide oaMfne dc hanical t2e8r2e d sput- carbide tungosft en properties tribolaongdi cal Mechanical Adhesion 373 Volofu me Index Subject 301-306( 20003)7 3 Films Solid Thin www.elsevier.com/locate/tsf at]he odine, ioddei de, irlemast ed ioinotdtddhih iid uuemm Fluorine FluoridFeisl m FerromFaegrnreoetliecc tFreircrso electFraitci gue Boron-—carbcoonm—pnoigutrnrodbowsygni e onnb eaams si1s5te9d vacuhuimg,h ultirna annbeyaa slsiisntga nced esoroIpoxtnii-dboeen a ms urfacGea As 46 properties, arseniGdael lium A,, EE,, Ionb2aa e0nrai7dmor r uandidoaft t ihioCnna Ff,il mas s:t uodfyl ithogra+ph ic (001) GaoAfs spectra modulatedre flectancee lectrLoi-onpetairc b ombarIdonm ent films, G10a2 As 145 methdoedpvsoa,sur isitioinupogsrnf e iptlhamisrn e d Thidcekpnoetfehpn serds oe opLnfe,a crySet r itpehis,n M nO, phosphore leocxtirdogela ulmliinuems ceMnatn ganese-activated Interfaces Al,Ga, ,_l,aG yaer,s_,, As Ga,O,:Mn abunfdf er IA3n7s CharacteorfiZ znaSfteii lomgnsr oownnG aAssu bstrwaittehs Interface p4r6o 150 plosafCtoibI eihfiftroaelir r tunFamntahOrgmaondsiiocflf ai-iillgenlmedcsyl o a irnn pfdodryraear,te idn g (s, midoyf: eig ldyes asrufInfrared b1t,iao2ai lrp9somih 189 sputtenreitnrgo,n HaTsfsffdfnedil,oiln gruedec -rludop -ps Tcziornnacdn-usccpota-irdneognp te d pbmaryge -p ared motF ITBO po)filmsp amoPe srh) frrn srra ii oediecdn~poxidce tin Indium tpeo Ceueasnrra drdt1fttshsermaanllnye aslyesdt e1m0,B a—uiih2outiClcie2rpimnt s-u pStroupcatteniulcdrea caclhlt ,ar riocaIfacn lte /eCridzSa/tgiloan ss so ir,-Prnn o c(bgp1ftsBIndium oOih2e -uinli2r,pmSpdn- tFnanostrfuacbtruircea1 t7i0o n, e s ruirPi,roce lb—ccprocessing ts1mnafftsesiletuem’ citcroonnd-ubcetaomr IfInoI_r I -V oe-C ii0h anesnliS7nndarsdmnproce ss goopmtoiloI rrIsint u si —uofhnrfs nano -ncce oCtfghmga— by tplrMBE, nnoa41 ul ieuCua emg-rencnatontnp-type sgpreocwtntr oscopy g6ftPocaDoOiegsrdZieintffuTlf eeecr:teNan nccee Ionf —iciuhf0h nescteM/leeiCr adtp imnns eMNru rosmeassituIunr emecn ts e sa,usg-T i, cciOtcO tL5wvttnanostrfuacbtruircea1 t7i0o n, oie/3iaa uinret r rMocihisftL(topdaFengseImIfioIcr- opVrn odcueeclsstiIetsonuci. rt n rgo n-beam e zoihihPf ranas nliaeoueb otd) mnlt ts,piO Ts esemircIoInId-Vu ctor ieg ciaorutOtncteL5wvri68 v,acuuhimg,h oii 3iaao nect r LpFn cs(hittdofaproperties p-Si(100) arasP eEoIfourllnfo-te rsrcmiatl-ari ticiciaodlen in ohiihfn)ot,bnielue dTpi, nmlt s ie sger Ideality factor Orcuat,tet1r;i ii9 eoc9sn s Gmvtonof suhianfaro60f itlhmiPsno,M f NTc haanrda Dcetpeorsiiztaitoino n, bilr nods nmiFsotws eaua-r loops Hysteresits t bcafihsteaot etcn53 coLnac evnatrrwiiaottuhis o ns, rseesa,/suMpgeOr conducting Bi-Pdb-Sr—Ca—Cu-O tfilms, tt1h2i2n pLrao)pTeirOt,i es Fatigue (Pb, eeadinedl ectric ottfihhflie mn s d Experimental design Hysteresis euhdpesilvnigaasnhspig mot ary,a tion E25l5e ctron oca fa rbon 37 laybeurfsf, eArla n,dG ,aIG,na _,,_A,sA s films, 23 CharoaZfcn ftiSeglerrmo isoGnz w asanuAt bsiwsoi tntrh a tes (CdTe),_ ,(In,Te;), pseudo-binary in polycrystalline CdTe-In Heterostructures Evaporation industry, microelectronic2s1 1 gvaasp our, fZsteoietn lnhmOsa o nro l 137 profile analysis ahentde rostructureisuitsnnhts ere adi ned InfloufAe lnI,cnC ,eu F,ea nSdnd opoannt htrese spooftnh sine SpeecltlroioSfpsi sc,,o/oatSmGp iofeie:ocot clr,or m_yp osition Ethanol Heterostructure-base-transistor netron sputtering, 189 pbmspayaur gtentdee rtirnogn, r2.4f.7 Transcpoanrdezunictnt ci-ncIgo Tf-Oidl pomrspe epbdamy ra egd- pre- (DLC) Cchaarrbaocnt erizatiotfodnihfil i amnms o nd-like Etching rate Hard coatings chromium, 184 Preparatiaonnd characterizatoifo sno l-gelg lassesc ontaining 199 ESR properties, Gromwovtdaher i oatfth fiiinool nnnmss a nos-ufbasctertateeds , 46 Gmroodwet h Ion beami rradiatioofn thinC aF,f ilms:a studyo f lithographic films, 102 ISOVPE MCT growth, 28 Thicdkenpeeosntfsh dp ere onpocefLer aS t,ri, yeM stn hOi,n Assessmenoft a non-lineadri ffusive—convemcotdiveelf or the growth, IM28SC OTV PE Epitaxy Asseosfans omne-dnlitif nfeuasrim voefd—oetrchl oe n vective high vacuum, 68 Growthm echanism Electrical properties of Ir-silicide formation on p-Si(100) in ultra- 155 Epitaxial Ultraviolceota-tgifronlarga dsse edsrs u:r foapctei pcealr formannancosetr,uc tufraeb rication1,7 0 Graded coatings In situ’ electron-beam processing for III-V semiconductor rapitdh ermaanln eal7i3n g, Electron-beaml ithography thin filmsp reparedu singv aIrinoutsd eeprosfirtaieocmnaie tacholtds oi,1f o4T5 n is/a n dZ r/Si,_c,oGnet,awc/itStshi Manganese-activated Gergalmliaum niouxidme electroluminescent phosphor gvaasp our, Electroluminescendte vice s13e7n sor fZteoitn lhmOa nol deposition method, 251 InfluoefAn lcI,en C, uF,e a nSdn d opaonntt hsre espoonfts hein formed by i-C,H,)/N, supermagnetron plasma chemical vapoGr as sensors 302 Subject Index of Volume 373 MBEm94a nIgCbitnhanao irtnuMnrei ilartenogerrgmssaa ,bn n uCodcelfhaisa araerns1rbm p 8eaoou9tcnnt rtTcz dtoeiro-enrnnalMsr icdnipiaz-usnukgacgcptent,otta ei e-irotrdneIolionirognofnn nnpo tc fgherMan l oilda u pm geponntffalngechieaneeiel tndrnnm io r sezso itamtrrMtaieuaigvecgonets1fnneriu0 e tslr2taim eslics, z , gaf t9aith8nlii minost n,e m9a4n ganpMiamratneoegdapsn es,eru ttriiecem se Lnutmssbpfcliiip ayrnklur oemettocmtoEb dstshhnffooe ueeef c nntcr etedkL ihecienon atdengcwsln tnafft, ee e ihane c li ndrtmno rrs sio ctmasrLan uogiccnsta2A+EaEaoeul,0 n,r,ttr ,7d o rie mreLuocseliopn ,fenidd lcereLe uetelaislcrfern slatolc el2ica-tetaa3ganocsrer9htcpetotd terta- e inorccpisL etnci igagc,tth8 rtt9oe drpliCeinehson a,tngd Lh d eaualc2fdoti3 cli ymo(.psaCns(,nd eIiTpLunneaad,)etro,T t1a-_ei5 mbc;5eie ) tn,ea rrLmsyia rsre2alpoabr6usrl 6leas sfncoDrt iiefae ilt drpomr aPe4bonsil9nt,os de d/ enic b dSft;B ttihaeiySirliyp roomn Laons dybas e 5lsisTaet,trie 199 i dOo ,n Gromwotvdaher i oaftth ifioinnl sm s ceted Carlo Monte Kinetic 28 growth, MCT ISOVPE diffunsao inov-fel —icnoeAnasvrse cetsisvmee nt epitapxhya svea por Isothermal 231 films,t hin IrO, propermtaiteeasrn ida l process Formation IrO, 68 vacuuhmi,g h formatIiro-onsfi licidep ropertEileesc trical Iridium 277 evaporation, films pmsbr2paya.4ufr g.7te n (tdeeD rtLirCnog)n, If iTlOms tmhaeg netic 243 characteristics spectra wfiiltmhs ipno lycrystalline rbeya ctivPe LD onn ano-fa e 0) Dualitmye talox idse emiconductjournc—tPiNion n t heA l/ silicon Optoelectrondeivci ces Opticoamls pectroscoopfy n ear-surfaecxec itonisct ates,2 27 fa gchromium, 184 netPreparatainodno characterizaoft isoonl -gegll assecso ntaining retf1p50 sihriliesmn-Ormgsofaodiilninla-iifcmndgncsio yefa ererlldpt,a l o ryre ad ting s i vpbmIn, Ga,_,A s and Al,Ga,_e,bAusf ferl ayers3,7 rya e gpCharacto-efZr niSfziealg tmriso oownnGn a Asusb stwriatthe s a rfntfa1Optical properties eeaih0ndrlin7d mnr o po155 s osfr mt oarUcoppflsugecnrtet1Optical coatings uti0rie7impe sclotoIorans o hffnno,ghce fpa no lleemuwvLc5 rtoeia3oattnri gn ihiccceFadpot(Ltfe oeei hhifPannras,dpLu eilenb tod)etToto raslenm S,thhipN ffThioe ys pire eg riitc p Vn areuOcptie tte,Mpcisnnpr2Fker,iitn ;hiir9lidntsmeM Roceat o3maIototomceei eea nrrscn 2hhfnfnisasleArvniagse ee7 fc Omnssaodccs,n 7Mlr a- ,pitsw ee uBcogbiban oe, a teossogryeor rImvnons tCbitfoio raamna ciernhiapla2frstowomtgspe ilarb eu6tuinutenn snmrloi6lscoe ers eil-ac suiDtocnfbrsndr gettscoeiifeuesa u,ynrrio tlda amrrpt b sodarmrc Nerbo ab-nnsiseti ,osbnp du is t seOnicoilsvione2rg tf9ppt teeacnxfes2iihaa8te ir oc ad-7tlitn ico imserne inicIotmotmomtstns se-vtihahfnn,fia,rao scee ee lf t cnognu o lNirrsn-rnucaocoe fde snotagdo nnf1topcoefcia7arsyer enba0nut e r mocIsepfIsrsiinostorlIeutcir uutonIecma1s. rrNcd- tcti0teuaeiV-tu7ca cpiomsn r roolotoInfn1trsnaooeohfnifnnc,9ouihgscle s nfd 5epranmon tl - u elseTgsgaooCctmerub ,rcht pfrn ohstoue etirt tod-eInigcnaiiufow1 e c-cet iccem9trvelP unsts5 h ma (ruGoeb ,sTgsaooCctpr0feiIa, htpfrnohseo0 t,iArt od- e1IrNni uiw s)e -a accet v tPtsnshae ubo ,prdIa Structure deetermination of (Ti,AD)N/Mo multilayers, 2o87 ,gdgu rtOoaMr esrgaafhnbBisortStructure of Ag/Co multilayers on excimer laser irradiation, 216 tedsneoweEer e grtgmdrMultilayers phaa vt tlai eScmtooumrdppyoh soiltoeg y tfilms, o203 ooff sinea o llMorphological analysis neu cm- ifabrication, nanostructure 170 niusemIiIcfIoo-rnV d ucprtoocre sseilnseigtc uIt’n r on-beam mC nitrogen dtreatment, a3 3 sswtuirrtafhta ecse TecqIrumyaspltiratoly v ement Si(111) -ioZnnn Se ftsoihufleb m -s Inepitaxy Molecular-beam opUcflspoleaoutatrsr199 riter ffcriaoaasnvsubstrates, crnano-faceted ftovoGmihnafroli r omndis wae tt iho ns :lgie mso a ldynamics Molecular necsteu-41 MBE, by ,bg -rpagrown ZnTe:Np -tyopfe spectroscopdyi fference reflescittauIn nc e id/RSocenSiuod(MBE) epitaxy beam Molecular iO sO ,e,/c203 films, coomfp osite moorfp hoSltougdyy SoinModelling d substrates, 293 procensists,rti iende li ng charpalctaesrmMiasi tcircos wave plasma Microwave 243 spubtyte ring,p rodfiulcmesd carlbiokne diaomfo nd- charatchtee roins tics content methtahne eof Effects Methane thfeo r model 134 sensor, radia atioans structu/reS i oxide rich /siAllic ont he in junction semicoonxidduec tomert—aPlN Duality structure semiconductMoert al-oxide sputterreeaocdft iv28 growth, MCT ISOVPE the for model diffusive—convectiven on-lai near of Assessment telluride cadmium Mercury ultirna - p-Soin( 10239 scatterinlgi,g ht laser using rate growth MBE and desorptiont heromf al Observation 303 373 Voloufm e Index Subject olattrianvgiso leptt-igcral erformance, or ausrefrasc:e a d e d Propane Plasma Plasma Photoreflectance Phase RBSpoC1 9frd oIpvaestosTnethilfnth,rerbe udeTsu rctd oRccetaiyratart,e eutmois,trtno a iaeinlcnrca,ai l 17f0an barniocsattirounc,tn ulre g sIefImoIipr- crVooe scnlIiedtenus uc.s ctitrnoogrn - beam Si, 164 tdonou tms qGueaC na--Gnoi edfn pdruooapcpnteeiddPrc rtaeilp easr ation Quantum dots 1sgpotfT4ieiaxrhn1lnsiio ms sgndp oae earsn-sn s5cLvwb,eo3aoia a r trn sshicftL(topdaFe oihehPifarandliueeb n)otd mnsl ,tTpi Ptfs e rieihg LcliarOutTmntt,e2mdr ii; 5ieeeo c1pt sn ovcpsibfh ssahl-youo,ipeaC rpd tomfc(hcEs,m,eiilriaodamHe rloe crnira,dmmcnbaddapad ,s ta ounrlem- )rgocnd poci/n2pdhauccote) EoncaN 5efisleliae vasdr,5 ngilasevratt-b s nhssc1HiSoedbpilroign 7iftmi oi,ooion t l6 rnanrH,nk nyu og, HdralfpaSafa1, et n a a-eurintri 0 it ySprodiogHo%eeioedap momnh, r: sern n sHipod t2ponsiccp Mtnir9hiselie toa3oisaceprcr ntsPslrriea ii lmodosconaaicstwfng2sn, eeia 3gm rlsv mias(e,pipsCs i,(noCs tdn IliedgTPviycuT nhaecsde,ypr -To)soyIet8i-,sr,r9ncbt_ )o a ai p,dlwaeCilfln he lniielloaste latiun,rPcmhdhnf md-syh a ei iu tl lEcEAnmhoaa2+s,,,tiac0nr , iuly7do ooma (GosmreLucn 0nfpeliona0 yef einddA1clcanem us)ettnaeel crr ir aataof n1sa -it9elnoue5 mcpoCcg rdstTsoaetprso,e htfnh ito -Iir mdeciwne-uf 1ce t icvP9snhlta5 bmt,u pIsTgsaooCct rso,htpfrn,hose irrt ode - InuiawtdoS 1e - cciontt6uvP,tst 4hema u bPopqs ,dCaoGaG prprurI f nn-eeetooae, dd ii prnp P cnea-aahdrt rlotuea poC1itcdt9frdeoei osITlsdospteavo nhtu ntehlifn,uer mreeb dduTo itcrt yceritanrt ,erteaeusoist,nSrCsoTdbbCa6tnoi sia aif4nhaaecu,inilcrf b d e te catd,irfaP mw lin liiulho ieicesa antceriegyscs1 oan r 8ehnl a4 r m Pacosgcoslfohnrom a ladnesis-rP tppusgaaaAeemecirScsl,twvLcn5a t eia 3oiatrrtr nn iohiicgFadpot(Ltfos ozeiihhP farnnacualeiben otd )omslnt, tpiP Tspe irega ciyoarrut Ontater ,eii iloe ce snc159 st,r iGaAs surfaceo xide desorptionb y annealingi n ultra high vacuum, c manganites, 94 IntergranulaCr oulombb arriersi n thin films of magnetoresistive Oxides thin films prepared using various deposition methods, 145 Manganese-activated gallium oxide electroluminescent phosphor Oxide phosphor applications, 84 Characterization of sputtered Ta—Ru thin films for ink-jet heater Oxidation rich oxide /Si structure as a radiation sensor, 134 SiGeC Sensors PreparatiIomn pSrio vement In (CdTe),T_h eoretical Observation Electrical qGCaGopoapfurnn-eet oaddi ipn l ncea-dayr ulet3tsnaws cri t3uriiseerr tet dasfharsSofZoqctit a niruhitunfonec lybea( mgsSmes -l1ee est i1nn a t1t ly),1s raas/or s ie3Sxta cni4irdjhDAs duistmoi uuloecanhxeenar/ tt eitm,clusi da itroiieletinlc yo io4Mb nc1ny Bo d nEgZposdrsu ,if-ieprnct tff eouTtylf2fc wepeeoi3tnlecr: rr mt eN,pipCo—sann(os,d sPnc Il eTccpCeNnyo1ueoer ,d c9fd~p TorI eo-ypynvaestos,-I es,thifl;tnrbntre) beTudtai u ,rcde1 ilnc aty ,letatr is,urionisailiwtffr onyiiooeoirianoni dlddl dtetddacspacemii,ihahsEao i l rspodn mditu lfn uoeeeplueeeo d,-p,cmpm dcrS et teeprrrrmthiols l2ciiicsoa3ageaccus9lhtsooets urgMadtot rpn aes fnher iBdtr idesoceiuEn rSow ngcmrt Eg taph,Mfn1lot a7 airb0nospr sIsefIon irionIesl cotr ItemaucSg tr-cieeriuVtclsooc rfoswnStdo1t-oinit,o6nuu,onn dht4 mrrPopqg-su oGCaaG egpru r bcfnn-ee taoaee tddiin pSnpa o cniee-amarzdrl rl i tufa hv6nic-ti8ageeai g cssdohuipofIop us nrln fn-roue-t SormsSmripbmia,cb(ael-ahl 1rir toicr0tiitni0iodtge)eenrk s films, y117 bsaucpkesrccaotntdeurcitnig ng analysis RoBfiu -tbhaesrefdo rd backscattering Rutherford applications, 84 sputtered ink-jet heater CoTtffiohfhalri a—m nrs Ra uct erization Ruthenium Structure determination of (Ti,A)N/Mo multilayers, 287 Roughness laser light scattering, 239 dguserisonowgrt pht ion OotaMrafhnbBt edseEr e mr avla tion RHEED 273 templeorwaa tt ures, RF-PECVD by obtfialtimhnsie nnd i trbioodrfeo n propeMreticehsa nical RF-PECVD dpeaproasmiettieorns , t1h8e0 qDmuaeagplneietntyd reonnc-ys putteSiC fooriefnla mc tive sputtering magnetron RreFa ctive IrO, films, 231 thin sputrteoeafrc teidpv re opmearattneidreip sar lo ceFsosr mation applications, 84 sinpku-tjteetr ed CoTtffhiohfehalri aa—m ntrs Rea ruc t erization Resistivity 227 statese,x citonniecoa fr -sursfpaecceO tprtoisccaolp y by MBE, 41 spg-prteoycwptner oscopy IsrdoZinfeint ffuTlf eeecr:teNan nccee spec. Reflection EEA,,,, aa20nr7do und + (001) GaAosf spectra modulated reflectance electro-Lopitnieca r measuremedniftfse rence Reflectance IrO, thin films, 231 sputrteoeafrc teidpv re opmearattneirdei psar lo ceFsosr mation sputtering Reactive method, 15 by layer TfCtftseihhtlohdlieaereTmn cmm s ekea entdti aoln of Reaction kinetics Structure determination of (Ti,A)N/Mo multilayers, 287 SoIV3ufn7ob d3lje euxcm te r e d Strained-layer Silicon Silicon DepositioRne latioTnh eD eposiBtai,o n SpectroscIonpfilcu ence The Thin ApplicatiDouna lity DependenHciyg h InterfacialE lectrical pulsed in tural and and laser a-axbiest cwheaerinanc ftleureinsPcttei/ c;SsiS, r);TmiicOrp,ro oeflielcet ronics infSlpuuetntceer ing 150 Sol-gel film Silver wafeorixrci hdm ee tal carbided epoSisliitcioonn Silihvciaigdcheus u mS,i licide of 123 ande lectrodes, heterosoloftc raulc tures f1i0l2m s, f1i1l7m s, Spyprroalyy sis tin dSoiplvienrg of surf/aScie s Soixliidceo n reactions properties ablactairobno, nf ilms of characttehirni zationa naleylsliisp sometry of Sdiizseto rxiibduet-iboan sed synchrotrooxni de of Sluabse-rp icmoicsreocsotTnirdBu ,c-ttuhrien pSrtorpuecrttuireasl inhomogeneities a8p4p licationTsi,B ,-thin structure reactive rate 68 films 266 nitridea nd 79 49 induisnt ry, Selpleicptsroomsectorpyi c semiconductor—PNa -Si:H of of Stdo1io6nu,t4 ms superlattices, depositeds traoifn ed ct7hu9ar rala cteristics, propane as magnetron-sputterTeid/ Ir-silicide film Si,Ge,_ film radiatiao n layers films and thicokfn ess 211 thicknbspeo2ypys3brrs 5toa layyi sniesd, im2n1id1cu rstoreyl,e ctronics radiation dpt1eah8pre0oa smiettieornHSsdoi1 ,i,ni7f H, l6 ,u t ion ra7tan3hpn eieardanm ldai ln g, PMNT by heterostructuorn es gas from Zr/Si,_,fGoer,m/aStiio n by stSdihotnegmoolanreyie nr -Wohlfarth 113 superconductingP LD ,/Si: the sensors, to reactive on thin on a magnetic SLSRyatanbadconihrfaraototritodorr noy n on Smcfo2otoiof0flumr 3mdp psyo,h soiltoeg y TXRF sensjourn,c tion pure metfaillm—s,G aSAisO ,/Si tool scosw2uin2aorl 2fnfi etcarocan em si,n ation metal—GaAsgv fZste1aaoi3etsnp l7nh omO sau o nrro, l 141 scosw2uin2aorl 2fnfi etacrocan em si,n ation SiC SiH, on sub-picosecond for fntfa1eahi0nriln7drnmo sos mtarugcnteutriecs , analysi1s3 4 in and p-Si(100) 60 usedc ompositiporno perties the film contacts ct properties from je RuO,/Si Al quality ub struc- itnh e struc- mofe tal /silicon 1a 0% with uilnt ra- ex S of AsamortTonpyofafeaXpn dtllcRiayihalsFcrt i aiosott nir dp,LooTototraenSnhhffhoy pi e ripn ecye nkr,dntsiMCoTtffheeinpnihofehskeanulir aOa-sstc—mn jtr , st eeRea e t rucr t eedr izatioop((SaotfnprCZihtfn todlnir dipmnuOO ces c)a) rtl, tdruAIC tIoFaSoto_ireonluhhnffnenne,,as,pi,e f ds l pna l onuntesbassnRoBnaeuc fiuac pe -tlk ebyhsraseccisrasoeft ndot derpashtuaiuirnrdnnhtesncoai ertedftlnSSec. aide oatfyi/gilpoil oo rsfS,n lemneorii oGgi ec:l psse p dt ot, srs_roo iumsctectitdOsioumaoifryornprninonyelgcil efd , -aomcsri gsnr a fe iprilcoee ardd la ltyi ng AmiloeSo2urganft1xlrs r6c/taeu idirCcm ilotaeaut ryrie eor ns, on Ind Total Tl, Titanium Tin Thin Thermomechanical Synthesis Voloufm e PreBpaar,aCtaiCTouhn,e O ,, InterfaTchiailn The The TranspParreepnatr ation Mechanical Structural Chemical OrganicallIym provemGeanAts Optical Relation RutherforRde latioBni -Pb-Sr-CEale—cCtrui-ca—lO /MgoO reflbfeiaclstmefdiside,ol npm oss itedtc uhraarilan cftlbeuoreriniscdteie csrs e,a cTtiitoftaniinsnli motu hxmii ndpl eau slesre df 1i9l5m gs,r ofw1i9tl5hm ,gs, r ownspetuthtr,to enr cihnrg,o miFuiml,mtfihs li mns Tfihlimn 159 and applicasttiaobTnialsi,nt ty al1u5m0 and 159 surfaces pectraion-s acxboiepst ySw uepeernl attices ain- axbiest ween 1 ffiidlema sn dS ulfi373 des X-ray and oxifdiel-mbsa sed structusrter uctucroen 1d8u4c atnidn g prepared properties modcihfaireadc terization 123 f1i1l7m sb,a cksca12t3t ering treated fluo1r2e9 sfcreonpmcr eo pfielrmtsi esoT fi B,-thin ablation, characterization propertiedsTe hseorrmptaoilpo taniTn chnaele8r a4ml ianlg of tinh e Sturrefaatcmeoe xnitmdS oeur rpfahcoel ogfyil mmsi crostructuSruep efrilcmmosin cdSruuocpstetorrcruoscn tduurcet ivitsype ctroscopic fluorides 79 of and and 189 using Ta sol-gel crystal desorpotfi on and and with Ti/ propan2e6 6 zinc-co-doped of properties diffusion nearSaistn-unatsrdteufs errausfpcf aeeacr cele a ttices, superlattices, iodine, of film rat7an3hpn eieradamn ladil n g, optics optics various boron films quality analysis supSfBeuiirpl-cmebosra ncsdoeudnc dtpuircnotgpie nrgti es precursor by fsourp Berac~oCnad—uCctutih-ni(cgOk n,e ss Zr/Si,gsea_ns,s Goers,,/ Si oCfs I-PboCIfs, I -PbIIT,O osfo l-geld epositiotnRal2et 7oFm 3wp- neiPrtarEitCdueVr eDs , sbpo2ypy3brr 5toa l(oayyfi Zs nniesOd,) ,(CdO)bb,aer_tr,wi eeer n incorporatZofin nSge annealeixncgi ton1i1c3 sanudp ercondBoufic -tbiansge11 d3 sanudp erconductingiloi dtihodifeu m on films thin amorphous films in metal—GaAs 141 co-evacpoo-reavtaeppdro erpaatregedld a ssesm ethods, films nts3swair tu3itrer traafhtota egcmseee n n t, ultra states, thin and Cu an on superconductingfi lms, contacts sodium Tl- obtained and infrared Si(111) high 227 containing copper and 145 thin properties propert1i2e2 s F) by Si, vacuum, Hg-t hin struc- with thin thin mag- films 64 dye, sub- iodide, by sul- Dbsnocfreuyiiefapb tla rrom-cbisstpod iiienvtc eio osne cond pMgeoaahxllnoielgsdcieaptu nhrmeoo slrue m-iancetsicveantthdbaveGsuoi ineyalnuxdagns t rci hAreofdua arsaeu lpc meit, ni go n isTtffhConphioefhkauilr a-at—nm jtr steRea etrucr t eedr ization n e g o r t i n - n o b RuO,/Si SiO,o/n Si PLDb y deposiftieldms thin ;Sty5BTaiyO, ; films, 23 ,I(CdTe,)(,i_n ,Tpes;e)u,d o-ibni pnoalryycr ysCtadlTlein-eI n nG agporlaydcireynsttsa lline films, CSCt6ht dirSna in in ,h_a,wsrX-Ray diffraction evaporation, tiAa277 rtcsahtI t assisted beami on by grown compounds Boron-careemsrp iZrznoaSvnsX-tRay absorption epeei utomtrncTetocoatings, orteredn 282 ennart dni spcuatotrufp-bn r tigaordsnpieMtedb eeor cnlt hoigaeinsc iacla lunsgcp,ta Wear irnerIgnne tta ecZrtifiraogZfccmcoomrppohsoiltoeg y Study nfilms, ioo2ff0 3 ainoslsan mO lAoI i Unfolding process lfnu, fm lZo uxieinndcce tered coatings, 282 e dStructure ptspruuontpg-es rtteine s tribological Mcaercbhiadnei cal aofn d XRD Tungsten thinIrO, netron sputtering, 189 Tzpirrneacpn-ascrpoea-drd eonpte d cbmoayng d-u cting Formation IfiTlOms Transparent conducting oxide superlattices, a-axis i1fa1ni21n l33dm s Structural Relation between microstructure and superconducting properties Structoure and Pt/Si electrodes, 49 Bay ;Sto5TiO; thin films deposited by PLD on SiO,/Si RuO,/Si filmdse pTransmission electron microscopy contamination on silicon wafer surfaces, 222 PreparationApplication of synchrotron radiation to TXRF analysis of metal and Pt /S 306 Subject Index of Volume 373 3lbAaau7nlyf d,ef wsGogfZoreGiinufsrnarla t b,oSA m hs3tsna,wess t 3uri_ n r r et ,afarsSofZoqctitaAtoinruihufnnecml ygbe(as Ssemse- 1le est 1inn a t1t ly), 1 89 mbpfIziariyTlnge OcmZIc-ps onT- a -c rOardt7oena o3h-pnd peied erwcZaTodaomdiofn ilrpt na di//ehtl n dS a g ci,t,1vets so3eat_ 7nhp, saotortodSaFCIGonunhhfneunneoer,ieor ,sd p n, l, p a / onSntsise 287m ult(oiTfl aiy,eeArts)e,Nr m/iMnoa tion 231 films, proceasnsdm aterpiraolp erotfir eeasc tsipveu ttepspheocttoreolseccotpryo n X-ray spyprroalyy sis, by 235 obtained fthin (ZnOof) ,(CdO),_, propertieso pticala nd fA g/Cmuol tilaonye exrcsi mlaesrei rr radia2tion, films, b12a9s ed osiftreofdml uorifdoers su percondTlu-ac ntdi ng a nd propertieso f precursorB a—Ca—Cu-—(OF,) i electrodes, 49 red ilms 16 Hg- thin

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