Table Of Content

d e t a l e s R c - i, es, ee ee ches eee ee eee ee swe bere hen eee eee eens Analysis of single Si atoms deposited on the Si(111)7X7 surface eg ey Cees N,N, hn OE, Os I ec ct cee eee ee we meee eRe Oe Capacitance—voltage study of single-crystalline Si dots on ultrathin buried SiO, formed by nanometer-scale local oxidation ee eee GS se 0 PTE ee eee ee ee eee PERE ET EEC TE Te CS ee rs eee Coulomb charging effect of holes in Ge quantum dots studied by deep level transient spectroscopy an6oadoeBeaaOeaoe eeaak eead Se ed Nisd nieae lvniiocci En, Ba SEO, EE. NGUOUN, OEE, DO, BUR.s tec eee cee n eee eee sense eee oetn s r Control of self-assembling fourmation of nanometer silicon dots by low pressure chemical vapor deposition ctuA, i rs ee he ea Wk wo bb 0d 8 8 6a oO koee + 05:/46.8e C eee ee eee es resControl of the arrangement of self-organized Ge dots on patterned Si(001) substrates Strain-driven modification of the Ge/Si growth mode in stacked layers: a way to produce Ge islands having equal size in all layer Step bunching and correlated SiGe nanostructures on Si(113) mwteeeew.OFGGMOSiSOEm eHTaCieee.eMeeG .e..e.me eee . eee.mnSlt t eeeSaSndfea meiuse teoimanniiige,sn,lrionddheGtG n,f .ttedeo ee,e- t,esN lC ae stairs rnnssuog ec smttburlruiensc genertc0.BFCGSAMNRFt...ro ga.o..oeeue e. esaps tstrecwlbc creGe teeFotsSaXieaehilyeiea hntfn oAyTsteai; e/,nu dcrertit FM Sd srmvamiiiSOKKMYYGKNTIKRJF TFT ,iai n e.(.......ouun.ayaa m ,tgud- s1jtiu u tkm iT guheriSo 1d,Gtossf.aaaosry,ni,1h nizuu eanyzni oodeeeee (eh a Oe ek Ale ae hwo eiw Bé e8 OOS Re Ae ee eck oh kk ee hath l NS rr)u oaan ,n.1mwrff k,gmk 1aatoa. ai1cchepitaxyb eam molebcyu lar substrates pattoenr ned gseparatipohna se surfoafc e Dynami,.t)e,, e a .nn t. .OEaOOEEeOOkatecpEeea. DONweOEReeeh R e. aSSS c eadsLe S S.tIoaooewedteii nnhffen .us,(ee ceebmeke Oe 6Sh ve AOSODO 6 woe hd oS oe a fe ddo1Ho.rr yr0, amm p0 rR. MetzgeTr.,H . HosterH,. E. HansWc.h, GérLg.e ns, GeIn.t chev, DollGi.n ger,F inkpC,. aBaumH.g artner,S chJu. lze, t)eloi d so germaanndi um siliocfo n growth epitatxhiea lo n influetnhceei r and phases surface boron (111) siliocfo n formaTthieon int iooaes lina ae ee ee es a a oe eo ig al a Iee ny n Si(1on1 1),/3Xg,r/o3w-nB layers homoepitatxwiiaonlfn ed analysis RHEED ela e eee eee ae eb ae Ob oe bk a Roce bk 8 0% 4 hp SGa, Iey ISee: homoepitSaix(iy0n0 1) instabilitgierso wth kineticN ew Phenomena Surface eaeM Reae e foche) Terrky eeern er rer Xoee Preface Contewww.elsevier.com/locate/tsf nt2000 Jul3y 369, Volume s th SsFeee es EEa og ee eee tae O ee ee eee bee eee he ae este s aOeeobbeoeeese0eeeese e e ee yo8dtte oboeee 69 65 60 55 49 43 E39 33 10 xi Gd] n l o a i eneeeec nes eee eee ee beeec k kee DaEE OUOO , OEOs, CO,O s ReVsy Vee, HMOSFETsn -chanSnieGl ef or substratessi licon pattoenr ned grown layers buffer Gey;S ip Relaxed 8c eens wad Oe e BOL EO Be a9 6 ee eS a a co ks ee eas n ny sputtering ion-bbeya m dopiBn g heavy and films SiGeo f growth Heteroepitaxi . MurJ.o ta. MatTs.u ura, SakuMr.a ba, MoriA.y a, TakTa.t suka,F ujiuM,. NodTa., IkedTa., HiroYs.e , IchiAk.a wa, reaction SiaH y-iGn eH,-CH,SSii(H1;0o 0n ) film Si,_o,f- ,Ge,C, growth Epitaxial nee eee ccc cece cc 0. ... UebaH.. TamTb. o, MatHa.d a, NakTa.o , AsaTn.o , TatCe.u yama, substrate Si(00o1n) epitaxy beam molecbuyl ar grown layers alloy Si,;_o,fG e, roughness surfacea nd strain Residual Os sO Ree Oe ROK WO OE We add ea eedwk eka ee ware ese e Oe se re ee Sh eC ellipsometry spectbryo scopic Si(10on0 ) films Si,_,Gteh,i n of characsitteur Iinz ation eee eee 0..... 20.. .. .0Er.nstF.... HerzogH,.- J. KasEp.e r, OehmM.e , LyuKt.o vich, BaueMr., wm 0.1 below thicknewsistehs buffers SiGe Relaxed Kanevoln. H... ..... RosCe.n blad, BulsaMr.a , FitzgeEr.aAld., HockG,. ZeunMe.r , HerzogH,. -J. HacTk.b arth, buffers SiGe relaxed MBE-grown thick to Alternatives eeeene reser eeeee rete ew eee ce RI,O U GUBEe , UUFA,, SOBUe ND, POSRe,, diffractiXo-nr aya nd scattieorni ng MeVb y films thin SiGoefC Characterizat ee ee e OOS MAES SORE ROO MESS OAS eds hk eC r,rsr MBEin adlayers segreogfa ting method measuremneonvteAl . ..... HideMa.k i TakaMh.u mi, KeisMu.ke , YoshMi.m oto, SawKa.d a, KojiY,. MiurHa. , Jung, Y.-C. IshidMa., substra(t1e1s1 ) Al,Oon, /Si siliocfo n growth epitatxhie aoln layer pre-Adle opfo sitioEnff ect ......Y.a.s.Yu.d. a. ......K.a0wK4a.m .u%r a, ZaiSm.a , FukYu.d a, MatHs.u o, KamHi.o ka, OkadMa., prthermalr apid using structure bilayerS iGe Ti/oBf- doped reaction interfaancdi al films SiGe B-doped heaovfi ly growth Epitaxial ocesOeBe oo Oe ke ke ew OL4 A 0 wan ee Ae eo ob. ho Sea eaa oe ea rrsing egbrSsFoSfopryiineefioio l ll Grtmweaaemsctxx a tehiapplications tida vi leo n tfsSssaalgSsaosE otuauhfitnryixrrpyr eu/damGp aeefdrG dmeeirraymeee rnl c o dtieate rdmtagrowth phase epitaxy lSi(111) Nucleation and of Ge on in solid tieneicntcc-attealar a ee re ee sllisy ci sSurface segregation and interdiffusion of Ge on Si(001) studied by medium-energy ion scattering ted FGaCTinhhrldaiomn rw atcht erizatOptical investigation of modified Stranski—Krastanov growth mode in the stacking of self-assembled Ge islands iones Sy Sa I, BP. A, OD, I, Ho UII te ee eee eee heed em ne eerrnn neeese Formation process and ordering of self-assembled Ge islands M. Yamamoto, T. Koshikawa, T. Yasue, H. Harima, K. Kajiyama........... 0... 0... eee eee eee ee eee Formation of size controlled Ge nanocrystals in SiO, matrix by ion implantation and annealing J.Y. Kim, S$... Mam, J.H. Seok, CH. Lee, Y.H. Lee, B.-K. Suh, HS. Lee... ww tcec e ee wre ee Growth temperature dependence on the formation of carbon-induced Ge quantum dots X. Zhou, B. Shi, Z. Jiang, W. Jiang, D. Hu, D. Gong, Y. Fan, X. Zhang, X. Wang, Y. Li. ................4.. Boron-mediated growth of Ge quantum dots on Si(100) substrate ER ee ee ee ae ae ear eee ae a a a a are are Positioning of self-assembling Ge islands on Si(111) mesas by using atomic steps ee ee, a SO, 2, ME, BO, ID eee he ee eee ee eke mew ease wer eaees Drastic modification of the growth mode of Ge quantum dots on Si by using boron adlayer so ee As ek Fae a REE RA RAP RRR RAE ROE RO 8 OR OH ERS See V.A. Markov, H.H. Cheng, C.-T. Chia, A.I. Nikiforov, V.A. Cherepanov, O.P. Pchelyakov, K.S. Zhuravlev, A.B. Talochkin,RHEED studies of nucleation of Ge islands on Si(001) and optical properties of ultra-small Ge quantum dots Contents 171 167 161 157 152 148 143 138 134 130 126 00eeWGLMBC1.JKCMT.2oeahi.o2oe....euoL0 1 nLoDrSn.e, r....gr.c .s .0 e,.ak 0,- y T,a. scTSZOMIS1IMAYHASYY.ioak.auuk.1......a.r u.ke i ta6 z siadc modu.ugia,a,ame,,d.G, ,u,. a. .r 112 a.,.. ............raeeer e N1I2ae 0rE8 Saeaeeeaerae eerea e r aea ..04 . 104 100 96 92 88 84 79 E | R e r u nt n at i, Se,. POM,EE. T DG,DH .S O,B H.W OM cee ec cee eh eee eeeneceeeeense A study on the local bonding structures of oxidized Si(111) surfaces rr cosh cis thee 6 obo 4 606 8 bee ee Ome eee eh Heteroepitaxial growth of SrO on hydrogen-terminated Si(100) surface Oxide and Oxidation/Nitridation ee eo ee ee ee ee ee eee ee ee ee eee Gas-source MBE of SiC/Si using monomethylsilane a, ee a CO, 2, OE, (0, CEN cc ee hoes ak eee eee OOS ee ee Initial stage of SiC film growth on Si(111)7X7 and Si(100)2X1 surfaces using Cg as a precursor studied by STM and HRTEM EE eo ea a a ae ee ee ee ee eee ere ret rer ee ee SiC/Si heteroepitaxial growth Me AE OE Te CP Cree eee Te ee eT ee ee a ee Ce Growth of Mn doped epitaxial B-FeSi, films on Si(001) substrates by reactive deposition epitaxy T. Koga, A. Bright, T. Suzuki, K. Shimada, H. Tatsuoka, H. Kuwabara... . 1... 2... 2 eeeee eee Growth of B-FeSi, and FeSi layers by reactive deposition using Sb-related intermetallic compounds es es ae ee iy Ss Os go pk hb ke 8 60.0.8 0 Oe ee Oe ee 8 8 eee The effect of elevated silicon substrate temperature on TiSi, formatio from a Ti film ee ae eS ae 6k kod 6 8 e kw ee he ORR Se A ae eee ee eae GoeCfcouSMoplfoforOOrti n SIo rtSti waaa,F-txc tiEhthas TiEsiiml ninpn is l tici etrcraSoifxideaiellca ieelccs i tdreo/nSiicCEoGotPdsiSgmbeuSaP nhfinf apsinoo eHe e f iis.dlp ,a etnH- ei mcag,scnt Enhancemeof thermal diffusion of delta-doped xSb in SiGe oug yul racrS. Kobayashi, T. Aoki, N. Mikoshiba, M. Sakuraba, T. Matsuura, J. Murota............. 0.000000. ee eue e Segregatioand diffusion of impurities from doped Si,_,Ge, films into silicon ee OD, Se os oe 4 0 6b 0-00 6 OS ne OS ele e+ NON Ow OE oe a 8 ee eee) 8 Synthesis of SiGeC layers by ion implantation of Ge and C a eto ea g eo ere e rae ee eee ee ee ee KEpm imploaxnytgatelinoob wny- esnuebrsgtyr ateS iofG e-ofna-fbiornri scuawltiaintodon roc wot mhep olsiimtiiFtoaincngt ors KoyM.a nagHia.neK.,.. ......M.at.Ts..u .ur.a., ..K.ur.iH0n.o .,4 .P ark, K.-T. Song, Y.-H. Kim, K.-S. anthermalr apibd y layer boron-fardosmo rbed diffusiobno ron fabricationj: unction ultrfao-rs hallow technolodgoyp ing noveAl nealeeee eeee e 002 SYh. iraMkiyaiMo.,. ....N.akK.a.g .aw.a,. ..Y.am.S.a g.uc.hi.U,e nTo., IrisTa.w a, ingCapaicAirrnrtSsm aoreii*pliclv, leleaa_orsaxt,y sineGs odte n e, d oh ee bb ban wee heb ee eee eee cbc ie EOAA,E CEEOO,, RU, F.C SPecn : technoSloIgMyuO sXin g structure reltahxioenn d -SliaGyee/r SiO,/Ssit roafi ned-siFloircmoant ion ae Ale hia ew aa hcp eel ecmd e hie Od ww wo ok NI, o OSss,, nee n: csroylsitda-lplhiazsaet ion SiO, SoooGeinffen -hianndcuecmeedn t ee ee a ey ee ee ee ee ae re eee e ee ee ey I e applicatdieovnisc aen d fu—n damenStiaGloesf dopingl ayer Atomic TPercohcnesopinesbéeothw es’s dbbeei ndedw eet retest a Os GE, Ses ey ees sl obuffers silicon amorphouust ilizing growth twog-stefpi lms: silicon phosspihtuoi nr uosf- doped growth Low-tempery .........K.ua.n. ....C..H.. .040. Peng, Y.H. Chen, C.C. Guo, X.J. Markov, V.A. Chia, C.T. Cheng, H.H. tempelroawat tu re grown epilayerGse /iSni structurneo veAl Contents 273 269 265 257 253 248 244 240 TeeERCYa2PoeeeCEECCeeeeECLO 3EeteEePEe ePEe3S eR CR PeO ) E2reoeoeaeABOOCDeeeO3SeeO aeeEOe DT 0 Sse S ER T s FRBTBi2FIBceesBccr iESCNeEO .wee2egR.e...o ere ee6V rM s e E ,ecUiRee e.222 Cer ,,Ece Es ,e 217 213 207 203 199 195 189 182 eeeeee0 0000 ...E.nss.Kl.i .n ..Mii.lEl.e. r, .Ihn.,T . .....G riDi.t zmacher,G enUn.s er, DehlGi.n ger, structures tunneling resonant SiGien/ Si structure emitttheer of Investigation eae ke we ee Oe eb ASeE a on ek 5c 'a 0 yooh ee ee siliicno n transistor tunnelingEs aki MOS-gatedv ertiAc al eccccce es0 .20 EI. iseSluleTi.m .a, ...Sch.Ju. l.ze,. .H.an.sWc..h , ...Gei.gHe. r , Anil, K.G. FinkC,. doping channell ocal with MOS-devivceertsi cal MBEin- growne ffects channels hort and behaviour breoafk down Optimization ecsebeeseasv eceewe e s mew cc ke ct ok BINS Iee , Iee, GeEee CBee s MOSFETs Si/iSni ,_,Ge, currentd raionf instabainldit y current leakageD rain 20050 ........Wi.l.li.am.s.. ...02Gl0a sJp.eLr. ,G.M. RobbiDn.sJ,. ChurchAil.lC,. Leong, W.Y. systems Si/SiGe strafionre d architecdteuvriec e MOSFETc hannelg rown epitaxially selAf- aligned eeaee oe Se e OMA OO Ow OOo oO oe.6 bck aw Ca ak a ene nee Sea UHbyV CVgDro wn PMOScFhEanTn eglr aded Si,_,GeS,t rained re eoreaas e are eeeEe a Ye TR MOSFEp-Tcsh avnenrentilmc al suibn -10la0y ers Si,_,-u,nvGdse.o, pCe,Dd o ped eee eee eee 2.0.0. MM. iPyark,a S.K.o ..Y.amS.a .guch.i, .N.akKa..g awa.,S ug.iNi., .. transistor field-effect modulation-dopSeidG et/hSei i/n SiGe channel straitnheed t-oS i transferrecda rroife rs number Limited ees eee eee eee eeeee cece cc WastRe.. .. SihtHi.m amoto, TanaMb.e , OlmEe., OdaR,K . HBTsse lf-aluilfgtonrre gadr- hoeiwpgtihht-s asexpl_ieeaS,ceilGtd, ei ,v e .....K.on.dM.o.. OhhatKa.i,. MasTu.d a, ShiHm.a moto, TanaMb.e , HayRa.m i, OdaK,. OhuEe., WasKh.i o, ICs and device, process, HBTs: SiGe selective-epitaxSieallf--garloiwgtnhe d eeeese e eee ee eee et OGM... J. SctPi.e y, FischerG,. G. KnolDl., Fee©s.m emenn, layers base Si,_,Ca,n d Si;_,SiG,e ,, with transistorsb ipolanrp ni n transportc arrier minoorfi ty analysis Comparative .220002.025.002. ..O.st.enH ..J. ..Sc.hPl.e. y, ..Ti.llBa..c k, ..E hwaldK,. -E. HeiBn.e mannK,n olDl., ChbSaStoieorfnii.ptenee besetee e ee eseeee wee eee es eke cheek esA , I Ies eae am dGGoenp eelrsa a:iopMOSFETs of strained-Si channel hole in inverted to strain due deformation band of valence evidence Experimental rrsCjt iu onsrcIOE PS ee rt ae eee ee ee ee ee ee ee a ee ee ost ni oHot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures n De, By SO, BG, UE, PA, Ps i ee ec chem eee seer ecneeeresencener Transport properties of two-dimensional electron gas in a strained-Si/SiGe heterostructure at low carrier densities A. Ahmed, R.B. Dunford, D.J. Paul, M. Pepper, A.C. Churchill, D.J. Robbins, A.J. Pidduck................. Snimduii-noisomonvt/ipdp eySnluirpigalnteG nage ett d aLtbgfmdShwhhmi outoeeioirooioorflttimbgodpGnw feehoiphwue ee r nle ltd/roi rah Gstat etySchottky gating high tmobility Si/Si,_.Ge, 2D electron systems ir/ uouSrnciet N. Sandersfeld, W. Jantech, Z. Wilamoweki, F. Sctilifilier. .. 0... cee cee rere rere cere scee Guer eESR investigations of modulation-doped Si/SiGe quantum wells s M. Miihlberger, C. Schelling, N. Sandersfeld, H. Seyringer, F. Schaffler...........0.2... 00.00.0020 High-speed transport in Si/Si,_,-,Ge,C, heterostructures ERE SS RY Seer Coe eee were ea ee ee ree ee ee eeSi/SiGe/Si pMOS Performance - alloy scattering and other considerations Transport Properties and Electronic Devices 6 EE ee ee eea ee ee a ee ee ee ee Scanning tunneling microscopy/scanning tunneling spectroscopy of initial nitridation process of Si(100)-2X1 surfaces IE eee eee ee ee ee ee ee Thermal decomposition pathway of Ge and Si oxides: observation of a distinct difference a ee ek ak Wk eos ae de ORS Oded 6 8 wee Non-equilibrium molecular orbital calculations of Si/SiO) interfaces T. Emoto, K. Akimoto, Y. Ishikawa, A. Ichimiya, A. Tanikawa ...... 2... 2... 0... eee ee ee eStrain near SiO,—Si interface revealed by X-ray diffraction intensity enhancement Vili Contents es 0G. 88 es 387 383 379 375 371 366 362 358 352 347 342 338 333 328 324 3 3 2 2 2 2 Oe3eFeemkkeO0A0l eeek2ew e e e e 0 e PLDGPCR3RNDMD.AWeerahu.o...1...ipou.uJJnbB 6C fYlpn..rf.b .f., ge.c oii .rh nr.n ,i,dsl .,,1l ., ..s.0.....9... 8 8 8 2 5 7 9 5 1 e c s anced nescen u h i describing our requirements is available from the Publisher upon request. The publisher encourages the submission of articles in electronic form thus saving time and avoiding For more information on Thin Solid Films, please visit our website at: http://www.elsevier.nl/locate/tsf TSSC$CWdBCFHSCST.ie...h.otheo..o dr HPr era rMBtiOgbr..uribrcShRaso..akop ry n,seetehifnri Ttmk ot rrsta /di,i,auiwt Cer, S c ca y,raniSaIoeae eeewa m86a VatneO n eocEo GA ekebul ebeo s DstIo e rr e dtee a MSBAVSZKnVKVS SSnIr r,li..r.v..t.nu.hh,ui kPFaPe ABeGzdeVm c,zPolbg..Ss.t...paSatsoMmnrn.a t apar iyri l hci ifnueeeg gtyutolB,oo a ea ak I, o's Wg t6 ne a 6 ce oe ke eee aes bers :6k kdbteietrui’piv_ iEwE hlcrsv eoerhn,,vrnioassonr, o oeG, Anomalosurface absorption band at 1.2 eV in Si,_,Ge, alloy-based structures l mv tv ved laai,,, yt,e i so n eGiSGeeIEAOOooeO6oOee8eesyseOeeh e ,eO e s Ee wdpdu 1Ybote sOeiela mf.hna- smavfees Pe nes PN, Os ee els EL, GR. Ws UI ab 0h 3hk ow le ae 0 ee 0 ww eee sO b peu /seerec1l mldtra.taLight emitting SiGe/i-Si/Si:Er:O tunneling diodes prepared by molecular beam epitaxy e s5ni ni5cpg ohltn e hx ePUGJDARTSFSSPCSJSCZYr....ic..t.a..ec.reoh eh a n hn encuoptaSnieznnShaowaprsfgiel,,ztif,ntncoflll /r er dihlpg,,iuSre c,ee , ncis,a rrg t l,,t,u ,i r"“isGeGacoausGGsefhnlrpoOO ee OWW e ae e Ro ebae deog sOss I,ee, ee e a, deot,r ,rowa/lp twells quantum Si,_,C,/Ssit(r0cia0ni1 n)e d shifts Stokes Field-ena ehtt etircic ezsa tMBEby grown alloys Si,_,C, doped erboifu m characterization Photolumion OREOObe k eae AAClAe Bwe kag eeee es ee a excoift onsr ole fundtahme ental heterostructurSei:, _,Ge,/Si pseuthdeo omfo rphic orderinBga nd Devicaensd PropertieOsp tical Contents r © ekeyi ......0 .... Oe ee l e w ee ng errors. A ew WJa.n tscee ee h, eODe e ee ae BG.a uer. MMIMUSJHKKKYE.Nith.ousa......o i.zrEl ta Mhrio.lom,..a teg ,ik ar.eeeu ,i ,c, . h.i,. .eceeeceeeeece eeec s Markmann, ANBbersuutfnreneleidrt,,e r,C.BGu.c tial. E0KM.... .....eS E......2004. l e aflet 438 436 43] 426 423 409 405 402 419 414 398 394