Thin Solid Films 2000: Vol 364 Index

9 Pages·2000·3.1 MB·English

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PII: $0040-6090(00)00908-1 Coonan, B.P., 75 Collins, R.W., 16, 129 Cobet, C., 98, 111 Claeys, C., 259 Ciorga, M., 287 Cimalla, V., 28 Chen, W.M., 45 Certier, M., 124 Carline, R.T., 33 Callard, S., 264 Buyanova, I.A., 98 Bustarret,E ., 107, 114 Bukkems, H.G., 165 Bryja, L., 287 Brunson, K.M., 200 Bremser, M.D., 98 BS7.o5,z zA1o.2,,4 D1.2,4 O2.8Y0. M1,6. 1, BJ5.o3,n aBC2.on3,n,3 a BP5.fo3,oh seBobek, T., 95 ,r , Bland,S .W.,5 8, 244 Birdwell,A .G., 171 Bikbajevas,V. , 181 BentoumGi.,,1 07,1 14 BR.e,n ferhat, 213 Bell, K.A., 22 BeechiJn.oT.r5,,8 , 7 5,2 44 Becker, M., 119 BM2a.2y,0e M2r.2,,8 B A 9a.8tD c.h,e lD29o2.8r,E ,d . FA7,’.5r, A nvV1ai7.ut1NadA .C2y .n,0aJt 0,.h, A2 o.9n1Dy .3D,,3. A .O9,1. A.AP1.,b9, 2r A Pa1.b0h,o7 a umg,h e -Nze, ELSEVIER
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$PI0I:0 40-60scopice llipsometinr tyh e NIRs pectrarla nge,1 65 90C(Analysiso f III-V layers tahckso n INP substratesu sings pectro- 0ar0bsah1aDispersiuodne secript8ion n)eclt6dm0te k Nocotsrii0er nhpuhefomagnestiecm icondluaycetr2os0r,9 c9ro etrag nosi i0fri-Cntzcaao9dOpticcahla racterisoaft MiOonV PE-grGao,w_n, Mns,eAmis- ddraaccne-uulTtet sc giGhQ23c ieettnDiluted magnet9ica semiconductor eotDa r ur1ixnoisNr unT aosdcsaazr,-ec tainhftures nwith atexturepd ginterface, 280 s sbrrtsae tdeo ,aratsiloi cnCi irpysvronaUltraviorleestp onsicvointtyr ionl S chtottbkaryr iheer teroastruc- eiseeen errrlbitc rd uu wSs2siitt imuDiffractiion grating 8 ceri rt aroufhgdtipoec lnma hnruflasemri conductor thin films, 2,69 c eto re roe ecimbRtsemotSwsrenehoei,plAppflicatoifot inhe r eflectioon—abssoprepcttiroons tcoo tphye tasegn amnel Cnhc sp lte ic iCt r a ptitataxiaSli GelaCy egrsr owonnS i,5 3 olsroorc noorbe msdiodes, oil2Ia5ns9eG rCa aArsbPod ne pendeonftc heed ielectrriecs ponfsuen ctiionne pi- secnnstoig rpz Imonpfei aurcotrotnarp dpotieniao rctfafi loo nr mancDei electric functions yia ct ihdBeiutoredireeosds tructurela ser tiono fs pectroscdoaptiac,6 4 oneslpleicptsroomsectorpyi c Ev, 6Rf.er5ao lm- tNiomne- deospt1t1tr.o6id5 u c ecaptpltr ihovf eia lnriden agl e-vtailmue a- pDreopftilhi ng nBiotrroidne Rut»hGeeo;r,ya nd 1e7x1p erimen|t , sOppetcitcraal Ru»Si; sioaabtnfnnart ddnue dcr tbuaOrnped t isceaclho anrd msopneicotcfsr ial icosnu-rafdaacetso:m theorfyu ncDteinosnialt y structuBrea nd conducltaoyre rsetdr uctur4e5s , Appliocofap ttiiodcneastle lmyca tgendre etsioicnns a enmcie- 228 regroewptiht,a xial rpehfalseect ivity ssmoiellaiidcs ounDr eefemcetsnroT eftis smo el ved Amorphouscr ystalline diodes, transition/tto ransforl2Ima5nsa9eGt ra iAosnP egblrylo iwptsho metry, ofpoo epinrtnr oieIfrfcuamo adtprliram aocatntin ocnme u ltichann1e2l9 film lesviellis cDomeniae cnprd o aocmfro yarsnttpaiRalhmelyoeasl uliis sn e Amorphous silicon scattering, microcavities, 1R0a7m an b2a6s4e d by stuldaiyeGedr asN hetceurobofie scpd ieoStipa mioxnioriagl fg c aonnicdchua acnrtda oFcratb-er riiczaattiioonn Alq; Silicon cCaurbbiicb e scattering, structures, 11R50a76m a n by studielda yerwsG eaNl l quheatenrcotuebpoiiufct a(mxiiAa dlno lp Sii ,ng Gsac)aNttR/eaGrmaianNRg ne sonant nCGiuatblrilidcie u m AlGaN ienngl arged wells, 224 40 spectrroesfcloeFpcTyt,Iiio Rzn e d conptolbaayr-i sngu-rpo weltahry elr nAaitotrliftdbAeo iorssfoc nte/ usGd ay Achsars iatcIuntP erhizoattiono luminescenc nbCioutrbroiindce superlatticesA lAs/GaAs quantum wells, 33 subsGtoarnaA tsels a22,y0 eorxosif d e Characterization In,Ga,c_o,uoApfsl /eGda As spectroscopy Photoreflectance Acid-polished Coupledq uantumw ells 249 MQWs, InofG aAssp/ecGtarsAao srp tion magannedt oab2a84-b if sinlmot sh,ir n ptiefeoxrrocnePli hebctTotirolOic;ne s h eaavnyd Light Cu-adnodp ed 5>TipP.b4Zgr0ty;h eo f conductiviFatry- infrared spectra Absorption Conductivity tors, 181 177 semMggiaoOn(cp 00o b1)nga,rd oFnweun d c i-nul odtorfiaf thr ine csttr uncitcu re characteleercitzraitciaol n electtrhoe- aandn d optfmioocrrpta hheol lo no gy abdesfeoctrs ipsnturfifarocea nr esdub strtatie maen-dr esSoplavteida lly Absorption of influtehnec oef study spectroscopical IR-trAann smission effect sCilzaes sical 144 plasmmae,t fhraonme d epfoisltimhtsie nCd : H) (a- carbon amor95p hohuysod fr opgaraementearst, ecdha raOcptteirciazla tion process depositoixoindo en SHGo-f measuremSeenntsist ivity film a-C:H 364 Volouf me Index Subject 299-305( 20003)6 4 Films Solid Thin
generation harmonic Fourth eHx220 wells, quantum ocliet1teIn,Ga,_,As/cGoauApslo efd 1 spectroscopy Photoreflectanceno4tn ,s transition Forbidden HGce287 ZnSe,o f spectra reflectitoonn oaxnNatiZ1 egn1exci-f reeo f struocnt ure inlluminatiobna nd-gaabpo ovfe Effect n o9St naeeaR nlan,structure exciton free Fine aaed lmlc H ayte138 layers, poloyfs ilicona nalysis Ellipsometric srntio edotsrrpeemeasure ment thicknessF ilm etoscfitshhSoIlcrtnenfie144 plasmmeaft,rh oamnd ee pfoitlshmiistCn e :dH ) auritv /clcuqeetS tcusrai(a- carbon amorphouhsy odfr ogenatedc haracOtpetriiczaialt ion ettonGvsuisceetwti,rgte un ie characterizaFtiilomn ear rtxttuseethcrUic sru oleo tf284 films, thin ferroelectrPibc TiO; rntsnuaeHtrp crderaeoeCu-adnod ped 5TigP.b4Zgtr0h ;eo f con ductivFiatry- infrared ovt,n li es orilSpectra Far-infrared oveijst2tuc 2yon pcaesytcnl,iold opi n274 ip cs oGcsourceexa,tn efnrdoemrd a diiantfiroantr read nsmitted morenottwrin obbyrsb eowransvofdiafleit irnicC gooh nna racterization toylh source Extended Growth Obpatnidcgaalp semiconductors, cow9h8fia drea cterization tent, 114 Excitons 192s uGboasntgA rIrsoanof tPlw ei anasyl, e rs GaN films haenthodeof rm oop--ehr poeTitsitoomallexvu- em di nescence s1Elapyietrasx ial t5r6u cspectra ZnSe, tro2oef8nf 7 l ection turband-gap eEferxfecfeie -c t oaiosotnlffbr l ouuvcmeti unraet ion s,n GiEpilayers atlrs2liienngl arged wells, 224 c2dio eup mssutpuedryl attices yPhotoluminoAceoflsn Atcsaei/nnGc-ae A s , Enlargewde lls pGOptical properties hheterostructures, structural oI2anf4nd 4G aP aolsllayers, p233 ihuimdOpcthiacortafahl coe txrSeimirdai,ilz_zla,eyt-d i, oGne ,C, e GaitdoerrtyiocnS fahgi Tni iddneN gp, 2o 1s3i tion, in‘ Realm-utlitmiewe’al vliepldseioanmggefntotomhrrso ytn i-c s coNRu»Ge;, ph17o1 tanirG-cadOptiinctaelsr pbeaacnntbdrda a sn tdr uocfRt uu,raeSn id; aacelAts seEllipsometry tr/riIuzZnSe, cni1n1 9 atGtiiavoRamanaedln e ctroarneafolliyfnes tcieetsrla enncafctileer lidcs Aens sG uElectroreflectance abAstwtistunietors, 181 r rtxtaeethtsru e elecctrhiacraalc otifen rdiibzraaegntcadistpo e nm icondfuc- rsae cdeSpataintadil lmye -irnefsraoablrsveodefr odopr pt tiaioncnda l , Electrpornoipce rties bsahueneconductloary eresdt ructure4s5, tldmek Nocir phocAppliocofap ttiidcoeatnlemslc aytg erndee stoiincsna e nmcie- otanosir-Z'intcaspin nd,ndElectron resornance actepSuultespLoaRc ':crentft)haONtVIfS/NdIeRte cbtoars eodn y wc-Spi:—Hi —snt ructu2r0e4s, rau ra—/oomi lrucGGz(rnayeecaaaEfficienscyn osssnttAA i,,n iiss s—vo epn in ZnSe, 119l asnic structure of ultrathin Fe grown on MgO(001), 177 Ramaanednl ectroreflectancmonsubstrate surface defects on the morphology and the electro- Franz—Keldysh effect An IR-transmissisopne ctroscopicsatlu dyo f the influencoef bulske micondauncdtors Dynamic conductivity Non-desopttricuchcaatlri ve C:H) thin films depositedf rom methane plasma, 144 Four-wave mixing faces, Optical characterization of hydrogenated amorphous carbon (a- 80 Dual ECR-r.f. plasma Reflected optical fourth har 300 Subject index
ionft ernal7 5 mateHftrireieatalne2ldsr8- ioe0ssftbSi ftonacer rrhc ruotic tettru krye reflectance-difference ghQGi2aeDn9aix s1Nna , -g boanasle d stohufer face 280 mls2aa0eyg9emnr iesc,to i1nc8d 6u otschufter o f1ra2c 4e c oupled analoyfisn itse re he terostructures, actoetfrh iezation monic generation
feileelcdtsr ic nuosni-n g heterostruc- spectro- hbsa1eu8netl6dmek rir ecogositnordnuulg scioIoG1carutan9nfatylbuo 2P e oAsrw rtresnsrss a, ltsCooG3o aeun3xfhaysb i aeA,sdrr tseasr catteesr,i zation region modes elneaclt ric 186 su rfraece at crystalli
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VIS/NIR detector based on jwc-Si:H p—i—n structures, 204 Microrelief Internal collection tent, 114 Optical and structural properties of InGaP heterostructures, 244 Strianci unbG iafciN vl emrsr seusshi deuxaaGlg acooNnn -a l ing enlarged wells, 224 Micro-Raman Photoluminesstudy of AlAs/GaAs superlattices contain- figlrbmmoy uw eltlthl1ii 2cp9hs aonmneetlr y, tronic band structure characterization, 58 Retailam nea olfay smiosar npmdih coruossc irlyisctoanl line InGaP/GaAs heterojunction bipolar transistor optical and elec- Microcryssitliaclolni ne Intermixing VISd/eNtIebcRatso oneyr dc -pS—isi:t—Hrn u c2t0u4r es, parameters, 95 Micrhoycrdsyrisoltgiacelonnla itneed Sensitivity of SHG-measurementso n oxide deposition process based microcavities, 264 Interface Faacbnhoordasfri r egcamaacinttiiceocorn ni dzautcitoonr - Microcavity scopic ellipsometry in the NIR spectral range, 165 Analysis of III—V layer stacks on INP substrates using spectro- nsitocur flFugt eocrrMn tao1g ut7wrOh7eni( n 0 01), InP-based layer stacks ssudubotersmnhftfa oeteeran hcrlacedtepte sce ht orol-o gy temperatures and under electric field, 161 AInRs- psotteithfrocnue aftfd n rlyuos esmncicoseps iicoanl Optical investigation of InAs/InP quantum dots at different Magnesioxuimd e phosphide Indium magsneemtiliaccy2oe 0nr9ds ,u ctor tronic band structure characterization, 58 OcphotMafirGOc saaaVecl,mtP _ieE-,r i-Msgna,rtAiooswn n InGaP/GaAs heterojunction bipolar transistor optical and elec- scopy, 22 InGaP/GaAs HBT ssepcleolcpitiprcso o-m etry raenfdl ectance-difference Optical and structural properties of smgIbnGporayPe no ciwthetttreroohostrr-u ct iuresn, g 244 combined sIoMinft O u VPE InGaP/GaAs scaosnppdye ec ltlr1io2ps scoompeitcr y, diodes, lIanseGra AsP 259 spectarnoi-s orterfuolspeiycn tegap nipcthea axvsyae p or Impact of neutron irradiation on optical performance of metalZonarSngdae n/ZiGoncfaS A/sGm aosPniI tinut oring InGaAsP Metavlapophroeagrpsa ient iacxy sorption spectra of InGaAs/GaAs MQWs, 249 layers grown substrates, io1IoGan9nfla 2P A s Light ahmbeasagovnryep ttoiaonb - heaoxnlcdei tons iann d heatnedrh ooo-fme poi-t ax-p horteosTloiulmmvieen de scence InGaAs/GaAs deposition vMaeptoarl organic chemical 233 layers, Si(111), 86 Optical characterization of thermally oxidized Si,_,-,Ge,C, on depofsiiltmAesdg andA u ultirna thistna tewse ll 4H-SiC, i2r0r0a diated quoafn tupmra o abse generation seconOdp-thicaarlm onic Infra-red reflectivity of ion-implanted and pulsed excimer laser quantum wMeeltlasl lic gMrgoOw(n0 01), nusFiltectr ruactthuirne o1on7f 7 209 layers, semicmoangdnuecttiocr morphology etosdsalhnueunee bfrdc sef ttcarrtcoase-t e the semi- Ga,-_,Mn,AMsoO fV PE-grochwanra Ocptteirciasalt ion of intfholefu esntcued y spectroIsRAc-ontp riacnaslm ission Magneto-optics spectroscopy Infrared spectroscopy, reflection i4Fz0Te Id R plgboarylyo aewrrt- h snciihttaurr iadcet erization Iobnfo ron 1tu9eslpleicptsroomsectorpyi c Infrared r6e traiassod,tinnu eenospectroscopy, ized r4Fe0Tf IleRc tion lt rnmdoiefs pdnocmPcraieeofhpolar- lgbaryyo ewrt h hofcncbihotarrroiandce t erization sIoinft u tfrna naoeye-r ac4slcts car-etspectroscopy a5absorption o otrIenfflreacrteido n car sy n ltdu esirmdoodAuceirnepeefapuinterface, tramttw2uei8rxt0eth su red etmt spgcuitidiieorlntLzi cn-cenioeavuahetbearrorsiSteicrrnhu occ-to tnktyr orle spoUnlstirvaviitoyl et tseacrttelm,esnai i 1iZl idcctonphosphide 2cyn Indium neenit4 See o namcpLoaR:rsntctemperatures nofohfield, Oafelectric 1au6nnN1dd er scae uadom /p cle cpLenao(yhenlsOdiatf fdeortesn qt uanItnouAfs m/ IniPn veOspttiigcaatli on osusnnoce i ,pn’ nde24is l—, ro 0H Indium arsnide iprp0n-nalle'pa iorIS—gdaeunnxfoa)i 150 furnavceaer ,t icianls ide formatipoolny silicon pisffld cns-Caellrs i-Litr,Gmeaaereim ac of chtahfreoa rc tereilzlaitpissoonpms eieIcttnutr ryo scopic ao-sdrdmsetrAna imepreds vrellipsometry l177 MgoOn( 0 0g1r)Fo,ew n ultorfa tohin strnduicct ure isIint u i a natnty teleictthreo -a nd mortpheho onl ogyd efectss urface substrate surfaces, Sw2ii8 t h oend of infltuheeno cfe study spectroscopica[lI R-Atnr ansmission carboenlo efm epnrtoacle isnstt heer adcutriigonnrg o wth Iron SitCho ef moniteolrliinpgs sopmetecittmRrreeyo a slc opic analysis 64 data, speocft rtoisocno pic situ In evalua- real-atnidm e profilidneg pth optical Non-destructive 6 MBE, soliodf- source conditthieo ns under spectroscopy implantation Ion reflseucrItfniaaAocnsIneds n- :Pa ngirasonowdtSit raontpgiy c 213 deposiTtiiNo,na ,n dS i of etchdirnyg itoring sIint u sspoercpttriao n MQWs, mon-f or diagnostics ellipsometry multiwaveleng‘Rteha l-time’ o2If4n 9G aAs/GaAs etchiInogn magneatndo ab- absionr ption excitohnosl e heavya nd Light 301 index Subject
244 heterosItnroGufac Pt ures, propertiesst ruactnudr al Optical 58 characterization, structure band tronic elec- and optical transistor bipolar heterojunction InGaP/GaAs Ordering 45 structures,l ayered conductor semiin- resonance magnetic detected optiocfa lly Applications resonance magnetic detected Optically 181 tors, semigcaopn dbuacn-d indoifre ct charactereilzeacttiriocna l and optifcora l absorptiinofnr ared timea-nrde solveSpda tially spectroscopy Optical 144 plasmam,e thfraonme depofsiilmttshei dn C:H) (a- carbon amorphous hydorfo genated characteriOzpattiicoanl 53 Si, on grown layers SiGeC taxial epiin- functrieons podnisetelh oeefc t ric depeCnadrebnocne propertieOsp tical 239 seomfi condfuunccttoirosdn,i e lectOrpitci cal 228 regrowth, epitaxial phassoeli ds iolfic on measurreefmleecrntetisvsoTi litvyme ed 171 Ru»Ge;, and Ruo,fS i; strubcatnuadrne d spectrian terObpatnidc al constantsO ptical parameters, 95 prdoooexcnpi eoSodssfSHesie Gtni-soimnte iavsituyr ements optics Non-linear diodes, l2Ia5ns9eG ra AsP ofp oeopnrit frinorcoeIfaaur mdltmip raaaotncnict oe n loss energy Non-ionizing heterostructures, asnedm iconductors 1b8u6l k Non-destroupcttiiccvahlea racteriozfta htesi uornf arceeg iionn cNhoanr-adcetsetrriuzcattiivoen ZnS:N/(n, p )}-GaAsi nterfaces,1 24 Ramaann alysoifs L O phonon—plcaosumpolmendo deast Nitrogen tion of spectroscopic data, 64 Non-destroupcttiicvdaele ptphr ofilianngdr eal-teivmael ua- networksN eural sorptsipoenco tfrI an GaAsM/QGWa2As4s,9 Ligahnthd e ahvoyle ex ciitnao bnsso rapntmdia ognn etoab- quantum Multiple well spectroscopyu nder the conditionso f solid-sourceM BE, 6 Statica nd growingI nP and InAs surfaces:r eflection-anisotropy Monitoring epitaxiarle growth2,2 8 Time resolvedr eflectivitmy easurementosf silicons olid phase Moleculabre ame pitaxy Ramans cattering1,0 7 Si doping of cubic heteroepitaxiaGl aN layers studied by Mobility grownb y APCVD,2 54 Defect related photoluminescenocfe SiGe/Si heterostructures Mdiissfliotc ations film growthb y multichanneelll ipsometr1y2,9 Real time analysis of amorphous and microcrystalline silicon Microstructuervaoll ution tures with textured interface, 280 Ultraviolet responsivity control in Schottky barrier heterostruc-
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interpfyerroommseeuttprrpyioR cre tfeledc tion tors, 181 6 MBsoEoflc, tioh udnen-d sdsipeotreui crotcners o scopy electrical characterization of indirect band gap semiconduc- resIfuaInlrnfneAgdaaPcsrS c nt toediasw ot:ini c-n agn isotropy Spatially and time-resolved infrared absorption for optical and Reflection-acarbide Silicon semicothnifdniu lcm2st6,9o r interface, 91 tthoe s perctoethfferA l opespccltoiipcoyan t—iaobns orption Optical second-harmonic phase spectroscopy of the Si(111)-SiO, spectrRoesfcloepcyt ion—aSilicon(111) 4H-SiC, i2r0r0a diated irradiated 4H-SiC, 200 laseerx pcuialmnsdee rd i oofn -riemfplIlenacftnritav-eirdte yd Infra-red reflectivity of ion-implanted and pulsed excimer laser spectRrefolseccotpiyo n ture, 196 22 scopy, density on silicon surfaces and interfaces at room tempera- spectro- reafnlde ctealnlcsiecp-osdpoiimfcef terrye nce Photoluminescence characterization of non-radiative defect specctboryom- gb rionwMeotdfOh V mPosEiIntni u t oring tors, 181 spectroscopy Reflectance-difference electrical characterization of indirect band gap semiconduc- 12 ellispapsnesodccm toerptoyrs yc,o pic Spatially and time-resolved infrared absorption for optical and spaencrtieursfseoolip-ptenv ihrcgataot apspaxoeynyr c e scopy, 22 meZtananZoldSfno em sSrIo/in/gtnG uaGia natAioPscr ing scopic ellipsometry and reflectance-difference spectro- speacntirsRotesrfcolopepyc yt ance In situ monitoring of MOVPE growth by combined spectro- bandgap Optical semiconductors, co9whf8ia drea cterization Silicon Reflectance Ru»Ge;, 171 228 regreopwittha,x ial Optical interband spectra and band structure of Ru,Si; and pshosoalisifdlme i ercearfosTelnusie ocrmtleeivm veeidtn yt s Silicides siliacomofno rRpehcoruyss tallizaOptical dielectric function of semiconductors, 239 259d iloadseesr,I nGaAsP conductor layered structures, 45 ofp oeoprnti fironcroearafIlumd m tiapranatocicneot n Applooifpc taditecitmaoelanclgrtsynee esdit osnien cma in-c e Recovery specutnrtdohceseorc n odopisfyto iloinMds-B6 sE o,ur ce layered structures, 45 conductor growing reflection-anSaaIstunnnarddAtf sia cc es: InP sienr meims-ado egoontpnfaeteA ncitpcctipaeeclld i l cy ations tehxepoerryi ment, a| nd Recombination Optsiechcaoalnrs dmp oeosncftii rlcai scuornf-aacdeast: om 98 sebwmoaiifndc cdeohOg napadrtpuai cccttaelor risz,a tion Semiconductors asRnpeaaclciyeps riosc al 95 parameters, figlrmb omywut lhte ilclhi1ap2ns9on meelt ry, SenosSiftH iGv-imtoyone x adisedpuepo rrseoicmteiesonsnt s microcrystaalmlionrep housa nalysis silicon Rtoaeifnam dle SiO, interface, 91 28 suSrif awcietsh, Optsieccaolnp dhsa-psheeaco rttfhmSr eoio (ns1ic1oc1p )y— caeorlfpbe romiontnech dtneeuegt srrrasailo cn wtgti hon Si(111), 86 StoihfCem oenlislttpiRoiepemrcsaeitol nrm goe stcryo pic on depositefidl ms Ag and Au ultraitnh in states well eslpleicptsroomsectorpyi c Rteiamle Ogpqperutnoaiebncretaa ultm i on saaos fe cond-harmscopy, 22 faces, 80 spectro- reafnlde ctealnlcsiecp-osdpoiimfcef terrye nce ogcpretynisectraaallt liionne sur- Rfhatoea ufrrlmteohcn tiecd spcebocgytmr orMboofiOwm- sInoti Vntnhe uPi d tE o ring tehxepoerryi ment, and | monitoring Real-time surfaces: siliocfo n-adatospme ctra harmonics econd Optical 1E66tv1 .o,.5f 5 r eolmsl piRepecsatolrm-oetsticrmoyep ic Second harmonic generation analysis Real-time 213 depToiasNSni,itdo i fo ne,t dcrhyii ntgo ring destructoipvtiec taelc hniqu75e s, nonu-s inmga teriahle teSrioo/fsS tirGuec‘ tIunrvee stigation mfoordn i-ea lglnmiou‘pslRstteoiiamclwes-at trviyem lee’n gth Real-time spectroscopy back-scatteriRnugt herford Ru»Ge;, 171 and Ru,oSfi ; strucbtuarneda nd spectra interbaOnpdt ical 124 interfac)e-sG,, apA s ZnS:N/(n Ru»Ge; at modceosu plepdhL ooOfn aonna—Rlpyaslmiaassn m on structures, 119 ZnSe,in 156 fields electriicn toefr nal analysis elecatnrdo reRflaemcatann ce wellq uant(iuAnm l ,scGaaRt)taNemRr/aeiGnnsago Nn ant spectrRoasmcoapny Resonant 244 hetIeonrfGo aspPtrro suptceartrnuutdcOri tpeeutssri, ac la l 156 structures, 107 scattering, Raman well quantum (Ali,n Ga)N/GaN scatteringR aman Resonant by studied layers GaN heteroecpuibtiaocxf i al dopSiin g techniques, optical Resonance 7d5e structive bgyr own APCVD, 254 non- using material heterostrSuic/tSuoirfGe e Investigation heterostruScitGueor/feS si photolurmeilnaetesdc enDcefee ct Raman Relaxation 3D InGaAsP laser diodes, 259 228 regrowth,e pitaxial of performaopntcieco anl irradiationn eutorfo n Impact phase solid siliocfo n measurementrsef lectivityr esolveTdi me dependesnocuerc e Radiation 303 index Subject
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