Thin Solid Films 1999: Vol 350 Index

8 Pages·1999·2.6 MB·English

Brett, BhatBta,r Bdaoos,o va,
PII: $0040-6090(99)00385- 295 J., Domagala, Dhere, R.G., 44 Desu, S.B., 21, 249 de Avillez, R., 44 DF2.a2,v8 DiD 7sa.2,,s GuptCHu.iN,. , 5 a, Cueff, R., 168 Cruz, L.R., 44 203 N., Croitoru, Comins, J.D., 53 Chu, W.-K., 130 Cho, J., 173 CX.h,e n, 130 Chaudhuri, S., 209 Caudron, E., 168 Cardon, F., 67 Capone, S., 264 CL.aXo.,, 5 Cantalini, C., 276 BH1.u6,s8 c BR1a.u7i,c8l B hG,5r h.3iAo g.lM4gDd.9s.J,, .,B P2, .o6 ,n9 h H22o1.4t,D9 e. M2,,.2 ,8 D3.0, BC2.a4En5.k ,s , Azuma, K., 38 Atashbar, M.Z., 276 Ashrit, P.V., 269 Andrade, E., 192 Ando, Y., 232 Akiyama, T., 223 Akiyama, M., 85 H., Ai, 219 Adurodija, F.O., 79 Acosta N., D.R., 192 Abermann, R., 59 Abdeldayem, H.A., 245 VIEA R
5

IzumIis,h iIhnaoruae,, HughHeosn,g , HeroHlads,o on, Fedosejevs, dos
JY1.a6Pc8.o ,b , H7.9, T7.9, 2T.3,8 IA 1g.3n,0a tievHL5,.u Ho.,R1, .0 ,6 J1.5D3. HT2,.i3 ,r2 o M1i7.k8,e ,F4. 4, TH8.a5,r aHS1d.a5aWn3,., HS1 , .a0 -n H,. , GMr.a,t zel, 269 Gong, J.P., 289 Gogniat, E., 269 GnanarS., 124 M., Gilo, 203 Gerlach, G., 178 Gauglitz, G., 178 Gasser, S.M., | Gao, Z., 283 Galakhov, V.R., 143 Gadiyak, G.V, 147 FY3.u8,k uFD2r.d4aOa5z.,GF 2i,. re4 aCr9l.,FL 1i, .e6c ,d1k r ,R4i .9z,z iVF1,.e4 V3d.F Yo2,a.r1 n,e9 gFYn 2,.ak1 ,no9 ,, Every, A.G., 53 Estrada L., W., 192 143 L.V., Elokhina, Eichhorn, K.-J., 178 SV2.a5,n8 tAS d1o.ao8sVns6,t. o,s , Thin Solid
a
j F
an, rmaev, o jima, m, ilms 35
u o o i Kim,K imK,i mK,a zmerski, 0
NF2.a2,k8 a NT3ST2n.8a.u9,i, sk5 ska Sun, J., 101 himi,u, rMSouunti,n hoH,. TH..R,., 4247 6 a,StM.Mot1o6yama, M., 79 245 D.D., MSomrtietnh, , B., 214 Moriguchi, M., Siciliano, P., 226384 Shirai, H., 38 232 T., Miyazaki, Miyashita, T., Shamin, S.N., 123423 M., Miki-Yoshida, Seung Kim, H.,1 921 4 Sénateur, J.P., 119 Matsui, H., 79 Massiani, Y., Scardi, P., 161 161 Savvides,N ., 124 Masoero, A., 214 Santucci, S., 276 Mandal, S.K., 209 Sahre, K., 178 LW1i.0a,6n LFRS11gi..6o0,,,1Ms1 .sLi, SA., R1106 i,.h0, - e WLeszcezynski, eRRM.2, 295 .,.e6, ,l4 lRS 7Leoni, M., 161 aa.2,Cy .,O., RSLefeuvre, 2,53 . 1a, m Lee, S.-M., a138 n295P. , Prystawko, aLee, K.-W., 173 tPrudenziatMi.,, 214 haLee, D.C., 289 nPoelman, D., 67 , Pivin, J.C., 143 143 E.Z., KPignard, S., Kuhnen, 1C8.6A,. , 119 258 Phani, A.R., 276 138 H., Baik, K B.G., Penn, EK.o,l awa, 245 | Passacantando,M ., 276 143J ., KPark, J.-W., YK.o,i de, 173 223 Park, G.B., 289 173 R., KParaguay F., D., 192 KK1.53 W., Pang, i5,3m ,J1. 7-3Y Pal, A.K., 209 1D.5,. 3K .1C,5. 3H .L4Osada, Y., 289 ,.4 L .KMOl7cese, G.L., 214 ,a.2 rK aK.S1Ogawa, T., 238 na,.0jn- aWKgYi2Oberhauser, P., 59 .,a.,8,, g 9 a mi,J., Jun, Nonaka, K., 28955 Yoon, Y., Nishio, K., J13o8o n 96 NMi.c-oAl.e,t ,Jansson, U., 113 1 Jang, S.-W., 138 Nakladal, A., 178 AIoV3fn5uo d0tle huxom re (1999) 308-309
rF8
o.
o,
s
n
i
j
d
e
r
,
TsaiT,r edgolTdh,o mpson, ango, anaka, alyzin, agami,
T T T T
T
a
o
C.J., ,
TY1s. u,j i, 91 R.H., G.E., TL2.a1,o9 , F., 219 214 F., S.-I., 3 A., 00 T.,
TY4s.9uY i.,, 00 11 3
TT9s.6,u chiy2a2,8 TS 2.i1,r umala, 3
TN2.e2,r3 a saki,
53 TH2e.9,i5 s seyre,
WauWteartsa,n abe,W anWga,n g, hanaVni,s hnu , Vijay, Vedula, Van
d .
G., D.M., ar D.P , Me
D., V R. ir
Y., 219 9 h
67 5 VF2.i21 1,n4 a i, DV4.i924,c k, aeg
96 WW2a.1,n9 g , h
WT8.a5,t anabe, VH1.i1,n9 c ent, e,

WY3.a0,k0 a283 R.,yama, Vasanelli,L., 264 R.L., 67 Author

x
e
, ind
u Wook
W
Y Y Y Y W
o e a a u
n o m m , ,
g Lee, J., 14 m, G.-Y. 173 Yao, X., 30 ada, S., 223 ada, K., 79 CX8.u5-, N SX5.$i, .,Q ., XW3.u0130 N., , J.D., 101 WC1.u0Z1,. ,1KK .3i,8m ,
WW2l.7,o6 d arski,

,
inin, aima Yu,
Z Z
K.H.,

P., .,
53 Zhou, Z.Y., 101 LZ.h,o u, 283 Zhong, X.X., 101 Zhang, Z., 130 Zhang,L., 30 Zeng, G.F., 5 B.D., Zeller, 53 143 S 91 YH7.o9,s hioka,
)
e
n
i m
SPI0I:0 40-6090(223 disulfides,l inked vi- ologen tris(2,2'-bipyrid99rutwhietnhi uams sembmloionefos l aryeesrp onses )00phototheel eocnt rochemliecnagtlh spacoefr -chainE ffects 0386bA-o203 sourcieo,n end-hall gridless u7n-d Sia using deposition ion-bayss isted preparfeidl ms HfOo,f Study ng 153 polyelectrmooldyetle s, charged oppoosfi telyti on attrac- electbryo static assembled multoifl ayers Morphology deposition, 38 vapocrh emicalp lbayfs imlmas i-leincohcnar ynscteadll ine micro- hydorfo genategdr owtthhe on additioGne Fo,f Effect (AFM) microsfcorocpey Atomic 295 pressure, high at annealing upon sappohni re layers GaNof micrtohseti rn ucture Changes 91 system,N i/Soif annealing isochronadlu ring evolutioStnr ess annealing air, i7n2 by dioxtiidne t o convertshieoinr and films thin SnS, and SnS dipo-fd eposited properties photoancdo nductivSet ructure 67 films,t hin SrS of properties structaunrda l optical Intrinsic An85 ments, neaexpeorfi - desigann d sputteringp lasma helicboyn strates linsub- glasson films thin AIN oriented higholfy Preparation g voAafnr alil|aaunder- Ti;;Sain.;dN 44 Ta35oSni jgN4f7i lms copopfe r yTexture ynseciress , Amments, m85 atoerrexpeorfi - desigann d sputteringp lasma helicboyn strates pihalosub- glasosn films thin AIN oriented higholfy Preparation su snAiltruimdei num 53 spectroscoBpryi,l bloyu in aluminium pDoteoabfor lhaoxide iAluminiunffeoaerl tps rmeeti 53 spectroscoBpryi,l bloyu in aluminium irrectmr i iensa ptDoteoabfor lhainiffeoaerl otps rmneAeti irrlectmru li i2maen1yisa9e nrt The properties of NMOB/cadmium arachidate alternated multi- sii,uo lmnAa l yteerMpoNtm2r hrfa1ainio g4g-Aacpn nCltkeeeo-elrtt fdtoofilms, 300 ii iyrlecsems s crystallization and agglomeration from amorphous thin istThree-dimensional islands of Si and Ge formed on SiO, through orsA,g glomeration ELSEVIER Thin Solid Film >t|U n \3
s

3
Copper Copper Conformation Chemical Characterisation CdTe CatalysCiass ting 50

PreparatioTnh e Magnetic Study The Evolution The The Effects PreparatioPnr oduction (19
9
precluayresrosr, strates layeprrso,p erties Cobaglrti dless chemical layeprr operties ion-assistelda yer layeprr operties hydrogen tion, Carbons trepnhgetnh,e ) 9)
of Coatings vapor influence influence influence film 31
| m8e5n tbhsey,l iohcifog nhfC laoycnt t2or1ros9l oN fM OB/pcraopdemrtieinuedsm- Hf hifalOlm,ls vapour depopsriotcoCiefdos Tnso eifn g, depootsefix ttCouixeroiernd p,ier u omc essoifn g, procoCefds Tsoeifn gCT,dr Celaa,bt smoocerafnpt tta liyotniac,chn adr act4e9r iopzfoa rtoiouns 283 panodl y(3Be-ftm;he-edtr:ih eytBslhtatyrnhludi c otuprhee ne) 0-315
post-deposition post-depositipoons t-deposition
of ion preparedde position,4 4 of 44 44 surface S3IoVufn5ob d0lje euxcm te
plaosrmiae nted Ni-Co CeO, carbon
source, (CVD) films films
138
124 layer
sputtering thick-film by deposited thin deposited thin
AIN 203 ion-ass1i1s9t ed
film on of films
arachidate treatment treatment treatment doped
thin buffer Zr-based
and magnetoresistors, by by by
films films
polyanilinpeu lsed
design deposition stacked layers stacked
alternated on on on alloy
on of
the prepared the the laser high
of glass elemental elemental getters
experi- multi- using physical physical physical films, deposi- tensile
sub- bMaesoF1iaetl8nflg/re6 daCucn yuctee trrtuosirn,cei c
214
by for
cTTTofoauoiainnefn3p3l d xd3psmet SeSsriu ir-jr; 3 eg; NN4y47 a EpgbBatfporyahinilio Fldtynmew ac s,nxr .i yaOsljt a9l line pdboCfsereyiftldop l aepTomcmesesker i enttdtie aedsl 5 pShdboaoecnianlth osdyeode (rted3ots -jk ouycn tcytlitohni o-
EoGaotgohmHydrogen fnhdffeiryf ed cFode irEw,rgriedncldie-osshnosa u 2lr0lc3 e , toltt oi-l hgos i2 StouHfdf fyneOi pl,rm esb piyao rn-etdades psuoisssaiit ntegid on p8 rns3eao npapfohtHfO, tmgienhfioetenld geldhsmt hnSahydbopcopper film, 10 ,i sr ecnneiao(l y )dthoesl3 edo eyE-dimethyl-l-butene) for the chemical vapor deposition of erd(tlmso 3tee j-kcCb2methtyl-l-penatnedn e()h fac)Cu(I)((DDMMBB)= 3,3- uoyit5uhcnl r8 ytcao EsampoN(hfac)Cau(I)(NMP) (hfac=hexafluloroacetylacetonate, MP=4- yytptlnrifanietlireo/od dgr/thou cpl sE pn(hfac)Cu(1)(MPA) hnicte,ylreiu torr emootu potcpe-Crb2icopper film, 10 nihterei 5ucieerr li8 csontas Esam p oNaNdimethyl-1-butene) for the chemical vapor deposition of niyeatlrinfaniiee)rte/od dgrc/s u cip s Ebs n Amethyl-l-penatnedn e()h fac)Cu(1)((DDMMBB)= 3,3- cteo,tlaeutrr nrentu otpu cdr1i(hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4- niclte 0cietar 6 ucsso r dia ecrn(hfac)Cu(1)(DMB) nmennlsterengt2h8,3 yieia epctsc,corlo Snfsbrpl tsooiiiapaphneodfenlno hiteyflie)( mng s3sh i- lmee thylythiopheune) yrtisglltaanl oremietrcntsEcrpnriscntiocehScahhnoeldtt tedkriyboo aojdpsneuo esnld ycy t(i3o-no ctylethio- l d oi ondeeecesanvn c slocT aWtsf2e tiorhiHenterodjioudnec tion ni 6mOrilyztadO9aonm,sren , Nedbocn sntod cnments,e 85 aaol,oa n e vnsevlm ioecelEp-cdistbhrpeysalla ptdiaonueeecsfstdxso tmp ineeag rr ntii -n g lll en r eeesofbsp1c mic0PorhoofeiAtr fpgohiIgiahsinellNruln nam b aytss-t se i do rn ytel1loh rm -cnrPapoeioto sppluatstmeari ng geoHtelficon hrrrnxlecs imoieaidleshnpidpd bprla7c, system,r Hf/(001)Si eicaea143 bu9y ytorus rll retmmaasHcito(tfdroi titiehXe-smaiprinsnearstdociyees ltn raii rfcoadat n-ciip iohanlas s e xieon IecinisildipgdTnso hnobsmm dohOiandB5 rsnpy es,Hafnrium 3l)uul oe ii y mcucmlt Dotetpoabfomtile lhainrffeiirocaderl o tnouns mr pSeisRgtf2isti ienhit1pirn ceUur ilcr u mroOtnmm et fEpip3am sis ,tilryn0n,eeslee o ,d0asaemrccaap tafttfuamst3ssstergme hhi,o sner0oirydurgii ollicdo dois nrnttPoplmS-(rnhc miTafoeatioSGon deposition, iprsrgheioPagnicular l1b6e am nf aspfnnfoh eet eoerO lmme i bllidd hrrisl ppo c,opaelqe, e cEa m eoeatpdboeylp yocsriytsetda lline upSiO, rnGey, Sip iurnmole- Cfoinl ms dalnererrutdogzealea tidtad-ispash,c tc)i stc ted taieof structaunrde textutrhee on temperaturseu bsotfr ate EffTect aiPreapcnahdra artoaidfcoo tpnpeo relfiydiza 5lanm tisi,l oinn e irirlosloiotim nnniOcepDoolpyeadni line , ea,n sl s Giments, deposition, 38 85 eonraesdpbxpelypusa etisrtgmiena-r ing mvapor chemical plabsym afi-lemn hsainlciceodn crystalline strates hoaefnl di con la nghPlirageshpsla yr ation micro- hydorfo genategdr owtthhe on additioGne Fo,f Effect oriented tfosoAhinufIil b nNm- s iumeDxepseirginm ents of GeF, annealinia nirg,7 2 elements for NO detection, 264 sensaist ive films thin WO, and V,O; between comAp arison btdtiyocitanf th ooS naihexnnldniiivmSnr ddes , e r sion sensor Gas SdopnifpraSSp ohn t-podrde tuercopttcoiuoesrnsie dt uedc tive pDreopcoessist ion 295 pressuhrie,ga ht annealing hydrogen-passivated Si/SiO, upon sappohndi eref elcatyesrs,G a N of micrtohseti rnu cture Changes interface 147 okodfrifnaie nmP usnseohumtdsydlie otsecrcsislii c caaatlli on GniDefectsa tlrli232 films, Langmuir—Blocdogpeotlty mer cryl-amide ideu mferroofc enylmethylparocpreyrltaitees- N-Mdaogdneectyilca - 300 films, spectroscionpfyr ared transformF ourier thin amorphforuosm aggloamnedr ation crystallization 173 panels, display plasma tSofGaSoiTACi n films MgoOf voltagef irintgh e on additioCna Oo f Effect insifhnoeh l Odrrr Ca, omenrvoltage Firing 85 ments,u eedygds-sh tdex poefr i- desiagnnd sputterpilnags mah elbiyco n strates ailmle119 deposition, vapour cshueb-m icglaaslso n films tihin AIN oriented higholfy Preparation nzsaitby grown films thin BaFe,,Oj9 polycraynsdt alline Epitaxial oionConar59 III, part films: 168 steel, manganese r ylis ettitaonfin um growtthhe on properties subsotfra te Influence atla liyocaEtthfolnmita wadpoErr b nlCcoppper 153 polyelectmrooldyetle s, chargfeidlm , oppooisfi teltyi on a o10 aoiucrnrtmtatra eattrac- electbryo static assembled multoifl tayers Morphoofl ogy deposivtaipoon r chemtihce aflo r dimethyl-1-butene) eoxridsyio i zn38 deposition, (DMB=3,3- (hfac)aCnud( I)(DMB) methyol-l-pentene) a nt ivapor chemical plabsym a-efinlhma ncesdi licon crystalline MP=4- (hfac=hexafluoroacet(yhlfaacce)tCoun(aIt)e,( MP) on 311 index Subject
t
t
e
t g
t d
e o
gate Logic YSZ, o1n3 0 films ;C;oSOrL;pa _yo5 f propertcieosna dnudc tiSntgr ucture pbuyl sed ablation, laser 79 deposfiitlemdst hin (ITO) oxitdien indium conductHiinggh ly ablation Laser techniques, t2i3o8n absorp- polaarnidz ed generationh armonisce cboyn d mined deterf-i lm LB an in dye oxaocfy anine orientationM olecular Laser atphpelrimcoatcioounpsl,e La,,~,Sr,CoO, 249 tffhoiirln m oxide cobalt strontium Lanthanum 238 technitqiuoens , absorp- polaarnidz ed generationh armonisce cboynd mined detfeirl-Lm Ba ni n dye oxoafc yanionriee ntaMtoilone cular 232 films, Langmuicro—pBolloydmcgereyrlt -ta mide ferorfo cenylmeptrhoypleratcireyslM aatgen-eNt-idco decyla- 228 imoifd azolesm,u ltilayers Langmuir—Blodglayers, 219 multi- alternated arachidate NoMf OB/cadmprioupeTmrh tei es 5 films, polyadnooipfle idn e chaarnadc teriPzraetpiaorna tion films Langmuir—Bl 1psbf0iory1llo m-ctoieopaP gehrrxfrnlesiioi edelsndpdp c I, ieeatr ur rirmtado2sieg itioconr0eiunuidh3so mrd-r aud ibpfHoSn clh oiosefrtyfe ealmnip eu O,slm-inopd1 disl,sacgs2aoe y s i4npr st- oebplbftCotoEiaishediaeuffrvyssoiiOlxyf oet sn,tnmdtefelpaIi i ureedusoasorsrp sntrten oi iee hSid,1ssodiden 4yit /nft 7detSPee drkmanodoriicrhe iiffnouooOtfysns ) ndmgdsasue,s e,csIeelit ot erntnlcica tsia-c ti ecslhSid1pear ae nis4yatf ftl7/disaPee S romanodkorcschrieinifefnuooitfysOn s dmdgsvasu,sesH e,c1eealit yof er4tnlctisc/ s3ia- cetiXss( clseairipdaepo0-nan enmat mel0r taldii,sci1eac sot Isdr)ytnsrnfi-S i atiapvio ecofh3a nriina0stafl s0 leamcaae aftscdrgm h,ner ygi osdosnl r mTiotSaGfoSt oisan pfnhihoem ll dOrrhr ael ,oeeImonir nuneeudzatge-sdasocptehr tom1td oprhii g5ifoilfpaoo3oy dmyaonMmrbnn oaeaecee sug oy tlfesllnilet er es tstrdcpcIeeaiit tnhclmlorr-fyaoobn or sybpla7llalataebu9yeolyrsalr l dte getdHca(ssitotfde riteyio Iiehixn scipgnn iTldid, o onhdmO d iInto sslu)ei,uxni ycn imdt td ei2eievu7dn a6m gp Itf pbsavt ohionhnryairll,ede cnm-aOr pIotcsoNsbo usgt;mhrnenneafaO eui eo n anv rsl,o ssmlseeeIo sni o sddxn t,rt i di sidvi geiuat mty Magneatnedil ce ctrsotnriucco tfuF ree/ Cbui lay1e8r6s , i onHyperfine fields hydrogen absorption, 138 Effects of catalytic surface layer on Zr-based alloy getters fo for hydrogen separation, 113 Fabrication of defect-free Pd/a-Al,O; composite membranes
r r
a
e
Multilayers MOCVD MetallizatMieotna l in
l
Preparation Effect (hfac)Cu(1)(MP) (hfac)Cu(1I)(MP) MagMnaegtMniaecgt niect Eipci taxial Electronic Magneti c on- Siunbdjeexc t
, N
responses plasma coppdeirme mtehtyhly-l1l-lal-y-bepruest,ne tnee)n e) oxide chemical ne l
Monolayer of ni rma
e
Nanocrystalline and substrate displaMyf gilOmf- iClma,0 O | propperrotpaienerdst iesa nd structure and 245 toth
Microelectronics vapour op
of electropnoilcy crystalline electronic
characterization 10
Mpraogpneerttiices
monolayer Moroileenctualtaiornt emepMbpeoeirlatcfae1amoit0cx lp uuympr, lee ar r (hfac=hexaflpuaonreolasc,e tylacetonate ,( hfac=hexafluoroacetylacetosnMeaeptamerb,ar taioofnn e o f depositionbC2,i5 ul8a y aenrds , bC2i5ul8a y ers, Mmualgtnieltaiycties e rs
t2tei3co8hn n iques, 173 ftohre and ferNrioc-seCtnory ulcmtuerteh ylacrylmaatgen-eNt-idco decysltaru-c ture proper
dcb1e6uep laoasmri tion,
(hfac)Cu(I(DMB)
assembloife s on chemical hs1f1ey3o pdr a rroagteionn , thick-f1i1l9m BaFe).O,o e
doped ttheex ture defN2eo6lOtr4ee mcetnitons, Fofe /Cu Mpamraneogdapn eseruttriipecerms o epenrttsi es Fofe /Cu aolf- fre
t
polyaniline vapor magnetorestihsint ors, me
-
with bilayers, bilayers, ya
and films of oc
l
deposition Ni/Au a
Lmio2uamf2ln i8tdg iamlzuaoiylerer—ssB, lodgett h
structure (DMB=3,3- t
ruthenium h
grown p
films, 186 186
v'tdl2-ir-i i2ibosn3siulk( ploe2yfgd,ri2 edi ned si,n e) MP=4- MP=4- and
Lccf2raoi3lynp2mlgo s-ml,a uymimired—reB lodgett
ocpmto1ophi5folpao3 dyonr ee sglliee tdce tlryo lytes, oSaplbt1afnwoh7eyi eil8hesnly rao lsmvti,eir norogrp ic
214
5 of of by Ni/
cNedbononeaalom vnsevoipece-cdltl e r esom cehnrtoamriyc mMbaoeauyotlfslt er strcpeaitchmlr-aoob syllteeoardgts iy c lspEotoephhfnfnaoef gc tetecohtre s-l cehcatirno gpabchamsobehyneailsne dcrnaoeodm oMooiaLfdmerrrxyinneirnfooBidpaaec tli dlzn- temac e ee iir nlydcoc-t a un an ltiainorbpd7SSenmfo oeGiyi inolpepO l l yyo,mec;ss - r i ytsetda llinvddtcofeeaihofh ppmre eoo em((masrtehDnii htfdcMtyh aaiBlylco=-l n)3l- C-l,ub-3(up-1te )enn(teDe)nM eB)) fvMtofAEoCaoiiohangffindfrCl eOf l d iOt eminacsg tgt i eo n cTTTauofoaoininenf33p ld xd;3pmet SSseruii r-,r. ;e3g NN44c4VWbaatfsA7 o,shie One milnOdt,nmsp; w si a e treiivnse ocPnmFododeaf em/fb maperb@ocit-rsc-Aaiaflttnr,ieeeOo esn; mpoNaNEsaratiflnniogr/e dd/pnu c Aecetrutrttu oiirnceei s c
y
t
i
PhthalocyanineRefractive index tris(2,2' -bipyridin-e )v iologenl inkedd isulfides,2 23 strength, 283 responseso f monolayera ssembliesw ith ruthenium phene) and poly(3-methylthiophene) films of high tensile Effectso f spacer-chalienn gtho n the photoelectrochemical Schottky and heterojunction diodes based on poly(3-octylthio- Photocurrent Rectification effect annealing in air, 72 strates: wear-corrosion behaviour, 161 andS nSt,h inf ilmasn dt heicro nvertsoit oinnd ioxibdye (Ti,Cr)N and Ti/TiN PVD coatings on 304 stainless steel sub- Structaunrdpe h otocondpurocpteirvotefid eisp -depoSsniSt ed Reactive sputtering Photoconductivplasma, 106 for hydrogesne paration1,1 3 deposition in an electron cyclotron resonance nitrogen Fabriocfdae tfieocPnt d-/frae-ceAo mlp,moOes;mi tber anes Silicon nitride films synthesized by reactive pulsed laser Palladium Reactive pulsed laser deposition oY1d3ne38S p0 Zo SacpcoLs;;fbfpcv,s<Siirtiarnfoahyl Cirllylyrood pne aptiOmsm up ofbdsEmopGaotgoh1m; sc istce_io0fhnrrdffiuireyyoo ma;trl1lfe od cnc5codF lnautm -e ci raPatploeiotrp,cvdwr,r icg-et.oihrrrlnf xlieahtloe etefseiin-oiei d .penpe lshgasonn e pdpd oc oSigsmtRt f42 e,sn heiaenishit1prt9 i Unmru oilar ri u r canOatmnmeatntoOaPopctfbpld,t si -s,titchaci lxferoau,yeesioeeisl eh p lirros edeonnrmnorsdboddtt2P ldsr sne hsioaeouuee u3e d osiamdnscclss8 nepdp- i h ntso mbshgapa1 rai lncierc7oebenai ynsai d3oplnsdecrn epqs tnaoe oMooodiladLfdEffect of CaO addition on the firing voltage of MgO films min AC elumi rrrnniersnfoyxa oBdeo a itlpa,i dylean sOladyer emnz e -t Protective e ci,r yenx icyc- tdeoa ua a n cMpoNtmt2ion, 49 lnt ydeposil-a ser pulsbeyd films thin carbon poroofu s Production hrfa1aiaiiioa g4og-rncpnnn OvdnC eke eeiareo -rtppgnt ftoooPchpms2aeiiirspriauo0lan eceiuegrmrr9ogs gsttsn hbo 2OponZfp bwmnrtiise oirupiaf8rnyeeaesoutlnottsn 9et Srtdrntbmw phio pCbifotfbsp1iia re soeoe ccryl-caompiodelL yamnegrm uirfi—clBm2ls3o,2 d gett ihi0ooreafnyehl orrnriall1lrnogh rn elsnntkm mdl-icy,aetPapoeiot i,is m-g ize svferorfo cenylmethpyrloapcerrytlieast e-MNa-gdnoedteiccy la- dhrrrxfnl e ecssaontii oiie delsi sbnagmopddp c bpla 7,zl Polymers l eireeaabtu9 yeelruss rlclr , itemHcd a(asoiotf thrlapanoyilesnryosmt,er orp ic Swelling i etiotIi1b7e8h avior hetohfi n icxn aeeipgnniTildhids o nonhpodomO fdroaiSt6sIn Polsymer layper srinlui)eonht,frn7ut iol ycc ti r mS dmimptrn Oputai c seei crpic153 paolyemleocdterlo clyhta,ersg,e do popfo stiitoenl y lrndtotn l st u pi giinr2ecc iaeattrac- elecbtryo static assembled mulotfi layers Morphology 4ra nls5tle opp i Nm o,rhpe(PVSsa)l t potassisuuml fate) Poly(vinyl eof ottst npho a-Obeatl153 polyelecmtorodleylt es, charged oppoofs itetliyo n ilprlh-sittoesftiin2catrrcattrace- electbryo static assembled multoiefl ayers Morphology 8bryemsaa3ieaeapph lrl natfo -il hoi (PAA) ehydgrochloride Poly(allylamine) inf g etlntld hysnpShhmy boad i ,oseec(283 strengnth, ainl lt)h3 eosdye o- de Oc(rtmtensile high of films epodly(3-amnedt hylthiopphheennee)) oh3otse n-jmk ttouiyanine, polyo(n3 -octyblatsheido h- diodes heteraonjdu nction Schottky 245 cn ccytct lyt lPpohtltymh(oea3ftl- aopolcrc-yotfapyro-elepr ettt hNoiioetonshp -ehlreimnnaeel)a r ithohnii283 strength, optics oNon-linear op-h tensile higho f films poly(a3n-dm ethylpthhei2no7ep6)h ene) evaporation, enepolyo(n3 -octyblatsheido - diodes heteraonjdu nction Schottky thevraamncasdluo b uly-m gp erflei tplhamiIsrnn e,dO ; ) on basesde nNsooOrf,s Pseonsclirytotish(osven3 i t-y meItnhveysltitghatiioonp hene) 289 network-sigzrea,d iewnitt h dioxide Nitrogen films thin ioniozfa ble behaviors bending Chemomechani16c1a l behaviowuera,srt -rcatoersr: osion depoasnidt ionsu bs-t epelr sotac3i0eno4lnse ssPsi lcnoaagstP imVnDagTs i a/nTdi N (Ti,Cr)N 173 panels, display plasma coatingsN itrides ACi n films MgoOf voltagef irintgh e on additiCona oOf Effect 91 panels display sPyNsloitf/aeS msai,n m niaesa dolcuihrnerigvonS ongtlar ulets iso n 124 deposition,i on-assisted silicides Nickel by preparelda yers bufferf ilm thin CeOo,f texotufr e E21v4o lution magnetortehsiciks-tNfoiior-lfsCm , o propertiMeasg netic 49 tion, Nickel deposil-a ser pulsbeyd films thin carbon poroofu s Production 209 sputteringm,a gnetprroens hsiugrhe depositviaopno r bPy hyspirecpafairllem dsZ nS nanoofc rystalprloipneer tOipetsi cal 245 nine, Nanostructures phthalocya- metaolf- free properties optothermal Non-linear 269 films,t hin WO; and TiO, crystalline 313 index Subject
dioxide Titanium 30 techniquseo,l -gel moad ified using films thin sutoselic-nhggne ilq ue, 3m0o dified( Pb,ofCatf ahiil)nm sT iO; propertieosp ticaaln d electrical Preparation, (Pb,oCfa )TiO,; propertieosp ticaaln d electrical Preparation, technique Sol-gel (Pb,Ca)TiO; tfhiilnm s 101 process, sol-gbeyl film thin Loaftxof;htiri;i dlhan~me ep,2 prS4lm9rio ,cicaCrotoiuidOopi,nlu sme, eleocft rochromicp ropearntdi es Preparation Thermocouples process Sol-gel 44 procelsasyienrg , elemental Swseltbleaihcnaogfvtk hibeiaonnrdy i s optorlolypaimycee1 r7rs8 , depositefdi lms CdTeo f properties physitchael on Swellingt reatment posto-fd epositioni nflueTnchee 138 absorptiohny,d rogen Cells Solar Effoecfcat tsa sluyrtlfiaacoyc neZe r r1 -4ab7la glseoetydft o err sd efects, interface Si/SiO, hydrogen-passivated thermodynamics of kinetics Sudrifascose foc iatiorne sults numeraincda l model Physical deposition, 38 oxide Silicon plasma, crystsaillfilicilbonmnepy l asmac-heenmvihacapaonlrc ed 106 ghryodwrtohg enated GeF, addition tEooomhfnffief c ercot- nitrogen resonance cyclotron electarno n in deposition roughness Surlfaascere pulsed reactbivye synthesfiizlemds nitride Silicon sbpye ctroscopy, B5ar3li ulmloiuniinu m SnDeteromtfih enela atsptirioocpn oe afrb tairefrsii olenmr i300 films, itlriicthin vibrataaidomsnaoosnrr dfpb rahotpomehu osn Sounrsf acaeg glaonmde ration crystallization doen chemictahlr ougShiv Oa,opn o ur dfeopromGseiedt ioann,dS i of 119 islands Three-dimensionalpgorloywcnr ystalline Ebpyi taxial BaFe,.O,, and tfhiilnm s 147 defects, interface Si/SiO, hydrogen-passivated opprtoipcearlt ies films, IsSaontrnftrSd ru icntsuirca l of kinetics t6dhi7sios fonc iatiorne sults numeraincda l model Physical cular beam deposition1,6 Silicon pdboeylp yocsriytsetda lline deposition, S7SiGigeO y, fominol lmes- 38 Effoesfcu tb sttermaptoeent r hateet xuatrnuserdt e r uocft ure vapor chemical plasbmya -efnihlma nceds ilicon crystalline layers, micro- hy|dor fo genategdr owtthhe on additioGne Fo,f Effect copper TTia;335SSii.j;gNN4y47 fouoTainnfenl d xdmet sru -r e wproperties cStructural 143 system, Hf/(001)Si -Sstuoeslci-hngngei lq ue, am odified in reactions tf3hisi0oill inmd- sph ase interfaancdi al spectra emissioXn- ray Geproperties oPprteipcaarla tion, (Pb,Ca)TiO, ealnedc trical of Silicides :H(Structure evaporation, 276 F)dop ed pPorleypaanrialtiinoen films, characterizatitohenrm al vacuuaoa5mnd fn d sol-gbeyl preparefdil ms thin In.O; on based sensorNs O,o f sensiticvriotsys t hce hon aracterISnivtezsrtaiugtcatitiooun nr al opprtoipcearlt ies films, Isantntrdru icntsuirca l tSo6hrf7iS n SStrontium e238 techniques, tion ns9] absorp- poloarainzde d generation harmonics ecobnyd mined rs deter-f ilm LB an in dye oxaocfy anine orientation MSotlerceuelvsaros l duutriiisonongc a hnrnoneoaaNflli /isSnyigs t em, 59 III, part films: gShpgrroopwetrht ies esubstrate toItoohnniffe ft launeinucme eancrestrength, 283 omrsputtered RUO, films, t2Sh1ti rne sses in noadnthigh pphoelnye()3 -methylthiophene) afoteifnnl dsm isl e i iStress ocn Schottky and heterojunction diodes based on poly(3-octylthio- Schottky diode 168 steel, manganese yitmtprliaunmt ed 192 coEahflna adrbp yarooclrytsasipest,r aribyy io zna tiobotanin feidl ms thin lZnoOw Steel Growth, structure and optical characterization of high quality detection, fNorO 2e6l4e ments Scanning electron microscopy seasn sfiittlhimivsWne aOn;dV ,Ob;e twceAoem n parison Sdpeuptotseirtiinogn manganese steel, 168 209 sputterminagg,n eptrerhsoisngu hre Elaboration and characterization of yttrium implanted low prepared pOnbrpayotn pioeccrartlyi setsa lline of fZinlSms bsapcekcstcraotstceorpiyn g Rutherford deposition, i1o2n4- assisted tris(2,2'-bipyridine) - viologen linked disulfides, 223 by prleapyaberurffesifdt leh mri Cn o efO t,eo xft urEev olution responses of monolayer assemblies with ruthenium Sputtering Effects of spacer-chain length on the photoelectrochemical pyrolysis, sbpyr ay obtained tf1Zhi9nil2nmO s Ruthenium complex oqhpuitagilhci atly Growth, characterization soatfnr du cture Stresses in sputtered RUO, thin films, 21 pyrolysis Spray Ruthenium 178l ayerpso,l yamnetihrosi ofnt rboephiacSv wieolrl ing strates: wear-corrosion behaviour, 161 Sorption (Ti,Cr)N and Ti/TiN PVD coatings on 304 stainless steel sub- YSZ, o1n3 0 Residual stress pcroonpdeurcttiiesn g ;;SCrop O;_5 Lag Soatfnr du cture films layers, 219 cell fuel oxide Solid The properties of NMOB/cadmium arachidate alternated multi- 314 Subject index
)
e
n
idi n
r e e
Swbeeolthfahla niivpnini osgool rt ropic Water ocrogmapniocu nds (VOC) Volatile tris(2,- 2v'i-oblliiopngykieesndu l fides, Effoesfcp tasc leerno-gntc thhpheah iont oelectrochemical Violog crystalline TiO, and WO; thin films, 269 Novel electrochromic devices based on complementary Tungsten trioxide pyroslpyrbsaiyys , obtafiilntmehsdi n ZnO part III, f5i9l ms: Influence of substrate properties on the owth 16 depositiobne, am cular depfoisl7miGstSe eiydg; polycrystallin microscopy (TEM) eTlreacntsomni ssion 59 III, part films: tohowen t h propseurobtfsi tersIa ntfel uence oTxiitdaen ium 269 films, thin WO; and TiO, crystalline comopnl emenbtaasreyd devices electrocNhorvoemli c
y d r r
m g g
e n
la1y7e8r s,r Swelling lapanoyilesryosmt,er orp ic obfe havior t1h7i8n 223 rmeosnpoolnasyees r assemblies worifut thh enium nano- 192 oqhpuitagilhci atly Growth, scoathfnra dur catcutreer ization of titanium Blodgett moblyeS -io O,temperature tstahtenerxd ut cutruer e Eosoofnufff b escttr ate tiotfa nium nano-
hydrogen ElabYotrtartiiuomn X-irsasyi on emissionX -ray Langmuir— annealing ,a nd Structureu ctive diffractXi-onr ay (Ti,Cr)N Siunbdjeexc t
ZirconiumZo xiindce em Sn§S nd cond and
a1b38s orption, ms1ta6en8e glyoca,athfn at dnrr eaiscuetm e system, Hf/(001)Si 143 rizasoialnsntipedder -cfptahcraiasa el tion iomfi dmauzlotlielsa,y ers in air, 72 convetrhesiiroa nn d filmst hin fp ropdapheeoprottsoiiest ed bsw1te6er1haa ar3ocPTtveno0-iVsi a4c/:Dot oT Wui irernNra,g or ss- icoonr rosion
o-
p stainless
implanted actions 228 txiind toe di
pbsZtfo1ypyhi9bnrri l2toaOnm aly s iy sniesd, e o
r i
d steel

low nS sub-
y S
n b
gclaEosfoZealaofunfrttlyrf r -taoe efelbyrcary atcstsse ie cd ohqGsacopuirthfntagroa dilhurw ci caatttclyhut ,ree r ization i