Thin Solid Films 1999: Vol 348 Index

7 Pages·1999·2.4 MB·English

$
/
9 ,
90/9 nko
0-6090(99)00309-0 matter fronts e- e 0040-60 Fu, Q., 99 188 J., Flath, Findikoglu, A.T., 39 238 F., Fan, 44 I., Eisele, 141 L.N., Dolgyi, 215 J., Dijon, de Cesare, G., 79 233M ., Czapkiewicz, Cozzi, S., 49 CJ1.o4, o SkC6.h,9-o YiCK5.,.h,6 R o .,3 G., Chiaia, , Chen, Y., 114 ChandarS hekar,B ., 122 233 F.J., Castano, Caputo, D., 79 Cao, C.-B., 99 Canevari, V., 49 Cameron, M.A., 90 Calzada, M.L., 253 Calvo, J.I., 22 Caballero, J.V., 44 Bosio, A., 49 BondareV.P., 141 Blanc, J.P., 266 Bilewicz, R., 173 JB.iFe.r,n at, 173 Berg, S., 227 AB.e,n david, 145 165 S., Amor,B en G., Baud, 165 V., Battut, 266 Bachari, E.M., 165 Azumi, K., 134 Azam, M., 14 Avila, R.E., 44 Agullo-RueF.d,a1 ,52 Achigq, A., 74
4
S00PII:
Kissine, KataKradrjlisesvo,n , Jahne, GrauG,o urbilGloetatus,c hGaolncGzhoa,nl egz,- Velasco,
KS1.o8,0c KWh1n.8oo,8wl 3Vsl.0k,V4 i. YK2,,.i1 - m0I,.KK 2,. i1 Hm0., 2I,. 2 V7. ,3U . OK.Y1,a.3 ,g4 eyamJungk, G., 279 a,JL.oBn.s,s o227 253 R., Jiménez, Jiang, X., 84 Jia, Q.X., 39 E2.7,9 JM 1a.6c,5q uet,YI1 .n3,o4 k IY6um.3c,a h iIM2i,g.1 ,n,5a t , HS6y.9-u HHnJ2..,w,9- a9SH.nS 2,.og0 ,g2, mHB 3 .ia ,rr sHTk2c.i4,,hr8 oaHR 1,u.e0 e,s3r s HM,2e.e 0,,r2 rHA 2a.e2,nr eCnH2n.ea2,,dn7 ldHH 3.eue0,,nz d,, Guerrero-Lemus, R., 15 Grupen, M., 14 P1.0,3 F7.4, GE2.o6,u6 mV1.9e,6t M G3,.o ,t hJ1e.5l,2 i Z1d.1,,4 MG2.i3Rb3.b George, S.M., 90 Js.,, Fuenzalida, V.M., 44 Author In Thin Sol
n, 2 d id
e
F
x i
l
ms

o 3
4
Lu, Lorenz,L oboL,i ppoldL,i , Li, LevLcehuenngk,o , Lee, f 8
rSr©1ESAile.lc9g lsAsi9h e.et9e rvs nv iceeedr . NT.o,s aka, 8 NordiMn.,, 2 02 NitschK,. ,1 80 Nascetti, A., 79 NarayaS.nKd1.a2,2s s, Nakayama, Y., 8 Nagatomo, T., 294 S., Mosch, 103 Moreno, J.D., 152 Monteil, Y., 266 Miyashita,T., 238 MJ.e,n diola, 253 Meldrum, F.C., 188 Mattsson, L., 222 Matsui, T., 145 Martin, P.J., 145 Martin-Palma,R .J., 152 Martinez-DuarJt.,M ., 152 M.L., Marcos, 152 Manorama, S.V., 261 Mangalaraj, D., 122 LE1.u7,3b oP3c.9,h ,M1 0.3, DL1.o0,r3 eA2n.6z,1, G1 .0,3 LW5.i6Tm .,Y2, .4 -2QLX 2i..3,-,8 d .C2,.4 ,2 V1.4I1. P,1. 4, LY2.e9-e9J,JL. 1 .,e3- e0H, .C5 ,.6 H .EL2.,a7, k3 a tosKC,2y. 2,l2 nSK 2e.u6rKl1,.kK M 2,ao. 3r,p3n cKK 1i.oe0,Jiw3 .v iKB,3u .oc0sEez .al,,a, r i, Volume 348 (1999) 314-315

ToénsingD.L., 285 TharigeT.n,,1 03 Tedeschi, R., 49 TakikaHw.a,1, 4 5 Tagliente, M.A., 49 SzarRg.1a,0 n3, SysoevV,. V.,3 04 SwamNi.3,, 0 Suh, B.-S., 299 P., Streubel, 103 Stoop, P.M., 285 Stoica,T .F., 273 StoiTc.aA2,.7 ,3 StobTi.e2,c3 k3i , SoulVi.e2,r6 e6, Seo, M., 134 Sass, T., 196 SakthivelS., 122 Sakakibara, T., 145 Romeo, N., 49 RR.i,z k, 74 V., Riede, 103 Rhee, S.-W., 130 Reddy, C.V.G., 261 Rao, V.J., 261 Pradanos, P., 22 Poulingue,M ., 215 Postnova,L .I., 141 Pietzonka,I ., 196 Penza, M., 49 Pennelli, G., 157 PaszkiewicRz.,, 180 M.-Y., Park, 130 Park, C.-O., 299 C.-G., Park, 69 Park, B.H., 210 Palma, F., 79 Palacio, L., 22 Ouyang, J.-M., 242 Okamoto,A ., 8 Ogawa, S., 8
, ,
V V V V V v
o o o e a a
r r i e n n
o o v r c
zov, N.N., 141 shilov, S.A., 304 enel, P., 74 avazhuthi, V., 122 273 V., a, der Merwe, J.H., 28
5

WroWnaat,Wa annabge,,
X
u
,

G
. E.G.,
C J.,
.
,
233 A.,
1
1 114
4 63
WG1a.9,g6 n er,

,
n
u YoshYiatnaYgka,e m,a guchi,
Y

, Ainudtehxo r
.
H
-
.
J H.-S.,

0 M.,
13 69 M.,
8
294
YV1.a4A1k. o,v tseva,
ZhaZnagw,i sza,
W.J.,
I.,
173
HZ9.h9-u S,. , 84
ZW2h.4-e2Jn .g,,
MZ2.a7,h3 a rescu,
$
/
9
9
/ y
S1PIS.A. Science Elsevie1r9 99© matter fronts e- e 0040-609000I-:07 4 0-609nCstf0ihiia(tillrrnim91fPgsbi c 9i2odoroVl2eln)onmA u pcAadsG0w st itrno,rCn0ireo dno o 0ulCp dwnceae3u ttcrp cuthtarrt,iceii14s1ip oloPniorc bfooS Hnu ,es t eroepitax ei,cos tn olayers Buffer rs 3 depolsaisetri opnu,l sed Soignf( rCio1loehor1mwSiOif1stgn,e )uh n dltiyee ds HTfSo r layer Buffer amosriplmhiacotouen7sr 9i als, defcehciatnrsbdog ouferc deoe vndi dEexnpceer imental Boron temperatures, substrate 294 gftrihBoloiipfmnaw,rs PnnTo rd ipe e;prOat)ri,ae tsi on titanate Bismuth decyels ter2,4 2 hboieflxf iiarl-um bsi Lnaa nndgM mouniorl—aByleord gett deriBvialtiirvuebsi n 44S iaSOnoi,dn / pSoir,a ted ffltiahiBlsintaamhn rtsTn aCr dipah Opna;sirpn goger t titanate Barium pSoSa4oiin4nOr d,a fftBitatC/tlhnirrnShaeai laaidaTdsnAmn,p rhi ssn p g Opnieo,anems7r gamai9t tllo eiirdciboeEcrnpefnohvxoigf nhdriapaAe ulodrmeocmscanegrut,toe neiss eidcdrm2 rn e 2epic 2nhal tluoa suilso n , Teoaotvodfhndiffhife sd emeg cifs P1ceotrio2tVltsiol2 mivhAuw sGsdaAcptetyn ,tirnorysCi rle o d noo ulpa dAwnceelu tltcrcuuthutrrtPmoaffan,srimei iiorfolr eie,icluole ouswn tmn-pnmm fA uesgia i il, merlun ul mamahaFdotgrm the inyfa Tiieaa ddsIno cg r-TeoaotvodRnatnfhindifpfhi i foe dsd h eome sicea Ancetto s,dttiis edvich ide2etsyste4ys tlic 2evay MaLfobrel,liifnao ll dunnAmi mgosrci umlibnduaiPoaffansriuiyn oiorfrletmre ulle ouwy —tAmr—pmm escBg a i, eelr nltaoaeane1 ytdlo 3noilegu4dnoacs e EoaofoTc-ntc intxfnoliar el ia otNeoqAstmdtdl cu pboeiiyteesn tncrocoeeg oustr ,csrp h utrmio onm iSubject sm
reservedr.i ghtAsl l ies oce f by in alto w di eva- eva- in opbcEoafpoeyifnltpr l ihupmhdgfrcaFot1amseiyaeoah3fnT niradaslre0 dIcgn cr- m tnRiiepaiod hudnoseam nct s ,eie c so f 99 130 dihexa-9 9 s, ianq u- Index
rt en et o
monino layere thers azoocfr own isoEm ersa ndZ of Prope Crown ether cmoualttiinlgasy,e red 2TP0iV2ND / CrN of behaviour corrotshei oonn thickness lameolfl ae Influ Cbeohrarmagnetron sputtering, 8 voisoiradiroeba-ycf tripevrqeefu ipetlanhmrciseyn nd i trCiodep per ro n Copper nitride film layer Mo(110): transition, Cd28ou5u ble oPnh ase Copper double layer sa3ep0np4csgSSsl Aoafftatooinnoihfn surcmrilOQ d d a nmp, ,2yt sa :9i r9CoPrsaWbn oaCduerptasusNif aour i,f ,cprtp vfmit1et eueee4irerst r vtr i,apceiePovdcwo looledeoeifnelpywrs n tv ri- t ethiCoppezr f ia rcacoce tartsli2Pm- o5ltan3e/n,s( vcoftfo cMoPheienr-egliblrl iA- OnmrC e,xg so,onCie et nsalled ) egranular silicon thin films, 157 ducT ctirtOComswii;tfieocvr t tniuhaCdtc louty—nuc irSoldefrialfmbob rlo et stiodomefs emidcocnhdi|pu sc,t or tesuisoco lComposite film tnai toPosi3onturf0f r(i— fc1-mcbfCoogtoCaa1sihofrofhtroyc1leeiy nd eeod )m Cpom stemaw -snhh,irrint y ecoecdhsvdolmda ac2 iea n ilsh1sppdss e0oooiuom pbpfntoprsrscriiiirfrliypt ttlpto cetate rmoapitapamdsEosaomii rneo ifnldanifioemd ilf nrd rdecnocaiue,ti er -hntSf1ccm ytodio1 a oit i ls 4-nn Comdhat pIocaoinsNeymronnofnc, p dluo fn daoycrrld 9ltnsctuoipe0 iiruetgth tuyrngbvduiZreofczismceseaorayrniiuoht e ipnp-oO rl naes no focmgws, flmttood8-egsor trti lohri4fri -i aal hiei ct tagmdded n e-aiTcoHiteismeetuennboh,l ofo’h opcri tu nen n etohaint tioxide, 63 tsinodariinxgl i otgi bndKrF i laser CVD of titanium oxide from titanium tetraisoprop-u eot,ni Chemical vapor deposition on 3sPoifut0fir( cgbfC1cmoCotofaary,1hirfohfotc,o 1eldi n ede Cmw)oetmts-sn thrr3 deposiltaisoenri, rpulsed , haoea cn ldras glfe e rbSogfCohoS inritifryel iu(g o Omed1hCow,sni1l103 Si,N,-targxen te1yir es) did egraphite/m ixeodf ablatiolna ser pulsed assisted plasma u m nitrrfo gebn y depositfeildm s thin CSi,N, amorphHoaursd f Volume 348 (TSF331ohi419lli869im n-9ds 3 ) 2 0
poSaS4S1inoin4i0 Ord,3 ,aN CtatiBtffepaplaomg/,tnrhlirnvhasbaurlfiS- ieaalasasdlaal Taxitnsmedn-ip appms1rHaCtf,dsibrn haers s sptehe4ehif aSgie rmmOy dptiiri til dtrpgieaoe,o o nntam rPeovpdowcd,cdHr n regsletofioe oset Noa / lprsgtnp v i,rwr ith,eht-itEp amfdezi n a oclernceaonr ceedoudatera tcspl tis1sntm9st- eao8 esri0alurnn0ti euncrt, rcmoMscvacZfgbcvdemuzcie aatfeian,eoiIearhsrye elm-rll rdpnpipaseOoS tuemc aEpooSn GdoiotboGmr,ws ec onlachrnnasfgirufiar trtu-teets toii O cctu hoArec ieptst,r-tos-sl7ag stf1 wtssereiiaeiab —pf4hi ilr5r ftemr ol yunillu( 7a iasthienenmtictnc n EohppoctsapComswcri sco tnea)affhuentrrnytfiosoe,eoxelr fe rt leordn, tdnsnti tre usap u s hEp Grsdadicecscerl riaerotludttur elol,asug —cur-ci p t 1nrsgPf1reiett ceae8iuoe2r ronsiVnr l0ls2lino ocotmA u c amoMscacGsdaeAcpowlisnta trftian,oeIrnrof,enaC ilrre dp nodo asnS ot uu l paEp doSG iotboGwdsn occeelcrnnhafiulf utattucrere tsoi aO cucuthAr-c ietptsr,rr-Emtta,tmc2tsessrieeaiesl—o iephe2 r efeerm, c e n(apioc aas t mmcecnrclaatai1hncPmbagpmao sitibnetaa)hnie 7isno aetneyreeu cl tecr t 3erssrihnids atr e ot d —soeeacqePoZaEioa eimG phrseen rawstnmutr ffnsenza o froulmd iahrobe donasoenid rteuteaplsce mEi t1zco r yeetecen iteas8a rsl ,rrimtrenrto0t o at ocaoses im moMscacwineyt r onhydarnFidTdd IieRa g otnfhog esa tsri-ecpeash1c a3ti0so en , tfanoeIe, nien rtr dp nsaSo ,ru s a EpoSdGiotbosn c Tehfefo aefcd tdo itnth vieiv seocsdfo siimteyt hyllalucminuhmna nr fifu auteest oi OcuArc iept,G-arDimethhyyldarliduem inum tsesreae—ra r fmr n s(liatecenclciPt(111) film/A2u4,8 suerfaces, nnaification )o3f0 eie ilt us dsm eEleecnrteefrlrsriegtoCcoaorynAamtfsruo olfllt ehc eg / LrdtowpBou tfho ror deerlCe,dof iylmbsiy c hemmicm iaold -d e Diffusion Fullerenes Langmuir—Blodgett film/A2u4,8 films, 238 EleencrteefrlrsriegtFocorariyApcamrtfsouio pplofle no ecraltl y/Li (tdeNs-p Bu polor yfelluo ryoalikylmacriyladmidees) DielecFctroiecfrtfiiocini enct s diagnostics hgyadsr-ipdhea se reaction, solgut1oaFh3fnTre0 dtI RP iofowVinnAl1 m2 s2, vdiismceostihtyyl aluminum etaTfhdhfedee ic tti ves Grstodrooownffi utaecAnlhtced,Cuocp r n tredro,oiuf pcc e tritoiens spectroscopy infrared poroaSnai tFtor uaneSrnisefdidro rmO 4,4/ Si, ttCrrhaaLaanpngrmspuigpri—oBenlord ggte tt BaTiO, films, ftifealhnivnai lad2sn3m-8 h s properties Dielectripcoolf y (N-pproolpyefrFltruiioecsrt oiaonlakly lacrylamides) cation,F luorinatedp oly6me9r AmbSaiiet2Oe6fhr6 ,nliaiaoty etlntnrhdghisn,m d-eieesapie dilIt pnarloPx rn ip aelb ilacseiesdte n-srNdoOr i, c Dieleccotnrsitca effnectt Field statgempeer atures, grade films, s2u9b4s trate ttoo8dohrf4i ei a emntoantdi on eddteucprhoiisnniggt ion loawt growfni lmttscTh ihno hene Bti soTfri ;0i,, bpriiuooHpaneontrf’dti inie t s ioaPnrlep aration Ferroelectricity Diamonfdil m Pt/MgO, 253 253 Pt/MgO, sol-gel (Pb,Ca)TiO; on filmst hin ferroelectric( Pb,Cas)oTtfoolci-Oghen;re- l ir oiArinreexn toecndi- eAtxsilse edfc itlrmisc osnup rowbperipstiettrs shrou aFtenrrtroooefele2pcuastr2oic cn 7gec r eadp hy, lbTaaidy/sroWeepvr frpuaiC sotero tsrime iarptt ioeodsn ist ional magnetrspount tering, 39 substraLtaeoAsnl, O;g rowfinl ms SroTfi O; prop8er ties miocnr loasyterLru acAtlurOra;rhl baoo epmffdoy tar-Enihfie cfCielpieoitctmpotnti-arss ax pvifi rapedrle eeed rq uency Epitaxy procDeessp osition 285 transipthioans,e Mo(omn1 1u0)lla:y tersi dylousCabul2tye 1ee5mr se,d potential obfmte ohephnpeoo caea TEflfhvrmh lfbatieeueidnoctd ciuetildrcs-oe a an tol m eDfeffeecctt s 279 layer, surftahceoe f function dielectrivca rying spatipaicla,l ym osrilpmiahctoo7enur9 si a ls, aniasno trow-i th systems filomf— substriapdntrecoe piehfbornteaeofOidecpvrrE stut iigoxccsadnepl e e dedn r ciem ental Defect Ellipsometry 49 devices,e lectroluminescent monolayers, for quasbiy- rheotgarxoy wn films thin ZnS:Mn qualityH igh 188 Elseelofnc -asftsilemmsZbr lneSado n d lPbSu mpatoitfe rnned eFosrmactioen nce 134 electrolytneos,na -nadq euoeuos us array patterned Crystal aqui-n coatiTnigNo n film oxide anoodfi c Electrochromism 188 monolayers, Elecstelf-roans soembclefdih lms rZnoS manid sPbmS patteorfn ed Formation growth Crystal 248 film/Au, LB Al/opfo lyimide structufrre om released energy Electrical 173 interface, air—twhaeta et r assemblies 317 index Subject
t
t
e
g
d
o
l
B
—
r
273s iligcrotnouo,wb nne f ilImTsO s ol-gCeoll loida18l8 monolayers, propeerlteaicnetdsrse il oOfn-c apsastfelimlbi mlse cZdn Sa anld PbS patotfe rned Formation 2lt6aehI6yoipbnen sniaPr N etss nOa,exs, dio arl film thin contrasLt ow NO, 222 inclusion, sensor 299c obpype fri lms aloufm iniumpe rfooprtmicaanlcE en hanced sLciagthtte ring bardrCiaifsueW f ruN,ss p,iuro oetnfat Pcertroiepvdee rltyi es N63i trideso xide, to-polycrystalline films, SiCN 11te4tr aitsiotpafrnroiopum-om x ide tiotfa niCuVm lDas eKrr F aomn oharynpdcdhro oondodugefipesI ton-nisf oilntu ieonLcnasee r CVD 103 NanostrSui;Nc,-ttarguetrs, es palsapssluiaamlssbastoelmee frgadid rt x iaeopdnh ite/ ndaiemtpororospgiehtneo du s by CSi,N, 21tf5 hiilnm s systems, multilayered rHfa rd of be3ha viour mechtahne iocna l pollutionp artoifc le deefpfeoctTssh ei tion,l aser pulsed 202 coatings, TiN/CrNP VD mSultothiufloiad rygCeiifrheeeigedls oOlnryS nmt, oib se (w yd1n 1 1) of behaviour corrotshei oonn thickness lameolfl ae Influence aLbalsaetri on 248 film/Au, Multilayers energy Al/polyimide 233 srfterrlouemca tsuerde s tructurestEoL,lrfBe i ctlraicyaelr Zr/Fe/Zr decyl ester, in layeFres ultroaft hin properties morpahno2dl o4gi2ca l Magnetic Langmuir—Blodgett Monolayer prodaopinfehd re txiae-s Morpholbfiiollgimirscu abiln Langmuir—Blodgett films, 285 transitiPohn,a se Mo(1on1 0): layer doubClue 238 pproolpye(rNt-iepso lyfiuoroalkylacrylamides) Forfi ctional decyl ester, 242 dihexa- biliorfu bin films Langmaundi r—BlodgetMftoi nollmayse r Langmui 173 interface, air—wattheer a t assemblies monino layere thers azoocfr own isoEm ersa ndZ of Properties 233 structures, trilayer Zr/Fe/Zr Monolayers Magnaentmdio cr phoplroogpieocrfuat lilte rsaF telh aiynie nr s 285 transitiPonh,a se Mo(1on1 0): layer doubClue Iron pMhoalsye bdenum transition vacuum arc deposition, 145 141 silicon, poroouns PbSo f Heteroepitaxy Pprroeppearrteide s by toixtiadnei um ofrcieaflat mch toidviec epitaxy Molecular-beam plating lon 299 ons ubstrwaittephsr onousnucrefdatc oep ogra2p2h7y , barrier, diffuCsui oasn WN, sputtered reacotfi vely Properties Composviatriioaotnsfipa oulntd ste epro Tsii/tWb eadrr liaeyre rs per metallization, 14 Iboonm bardment cop- contacwti-tlhe vel devices power vertoifc al Performance 279 Metallization pics,p ativaalrlyydi inegl efcutrniccto iftoh senu rflaacyee r, 180 tance, Optipcraolp eorffti ilems— susbyssttwreiamtatshnae n isotro- conduacn-d capacitances tructuMreI So f measurements 180 tance, of basist he on interfacGea As SiOo,f— (n) properties Electrical measurements of MIS structure capacitance and conduc- Electprriocpaelo(r fSt iiOe,sG— a(Ani)nsst erofnta hcbeea soifs MtMerItduSestate Inte2rface aces)dihexa- biliorfu bin films Langmaundi r—BlodgetMto nolayer 4lttc 2eu—yr NO, sensor barsed on InP epitaxial thin layers, 266 li,Metal ions e n sInP u22 characterizatmieontmo,b rane applied techniques laties of sputtered silicon layers, 74 tobgpPraEffemamocts of hydrogen partial pressure on the structure and proper- aeoy— tneesnr shdt aeoabsorption ee Infrared sMhtssrmtireou ritadrmtauccyCotlltm2oidal sol-gel ITO films on tube grown silicon, 273 pceebhoothera nd method penetgraaas t iobny measuremePonrtoss ity io2etpcam ro nulmhrenaIn,O;:Sn/tube-Si hedterrostructure ianbn eunecir tcdtqeascharacteMreimzbatriaonn e etu nroeiesrzmtieas gneof trsopuntt ereds puttersiilnicgon, 8 layers, 74 aradio-frerqeuaecnbtciyvy e preparfeidl ms thin nitride Copper tiEffects of hydrogen partial pressure on the structure and proper- odeposition sputtering Magnetron n,Hydrogenatenda nocrystallinseil icon 233 structurest,r ilayer Zr/Fe/Zr Heteroepitaxy of PbS on porous silicon, 141 MmplaFHouieteroepitaxy aroanpropelrties Magnetic enfyorg t deprpn rcation, 69 eahesrtot thliiiAmbient-dried SiO, aerogel thin films and their dielectric appli- 238 films, Langmuir—Blodogett nce sg iHeating temperature pproolpye(rNt-ipeso lyfluoroalkylacrylamides) cForfi ctional alassisted chemical vapor deposition, 210 Lubricant propeorftt iyt anniiturmfi idlepm r epabrype lda sma- substrate temperatures, 294 Effect of silicon addition on microstructure and mechanical pgrroopwenrt ies Preparation Bi,'Ti;0,> afoaltifno l dwm s thin vacuum arc deposition, 145 temperLaotwur e Properties of titanium oxide film prepared by reactive cathodic 318 Subject index
ic
m l
s l
i a
m t
o e
Thee ffectso fp articlpe ollutioonn the mechanicable haviouorf spatially varying dielectric function oft he surface layer, 279 Stress Optical properties of film—substrate systems with an anisotropic, nium tetra-tert-butoxide9,0 Reflection spectroscopy ZrOf,i lmg rowtbhyc hemicvaalp odre posituisoinnz gi rco- porous silicon, into 152 Stability Ag alvansotsuotdftayh te eil ce ctroodfpe oployspiytriroonl e 299 Raman spectroscopy Propertoifre esa ctivsepluyt teWreNda, s C u diffusbiaornr ier, Struactnoudpr tapilrc aolpo esfrp tuiteZtsen friOle 1md6s 5, ed4ties ofs putteresdil icoenl ayers,7 4 l9ve icHqZtfgbqfchoEffeicotfsh ydruopgaerntti parle ssounrt eh es tructaunrdep roper- uiryneirlarago Ssn Qmloshw ,sui:lhavidnigff erceonntd itoifpo rnesp aria5t6i on, n taMu-y smrn iiSthructuarnadel l ectripcraolp ertoifre .sf .-sputRtueOr)ef,di l ms -nereopld3hstaSputtering eu escapleoexosSohoCfgoSbrntsyeColloidsaoll -geIlT Of ilmsoi n tubeg nrowsni licon2t,7 3r ifi ryeita dl iug (o Ot mx edh1PldXpsw,isynil1aSol-gel euh-pno tes y1ploern eesp )osstcai1,rd o isenCollsoooild-aIglTef Oli 5 lomnts u bger oswilni 2co7n3, t y lritd2er ioot locAgsoteop uieoamhosriplmhiacostouen7sr 9i als, atflfo osnecclu e ln , tvdocyHoPops1: raytpipExepovb4efiior cndrdihdeoniemaunnnfercc enegectde t ads l f oebol n1r yy rtSi noor oPse cs driSolar cells uorotelonsroaip,l oetatmc2cto eouProaefflp fiauanlr srmmoeroaismow9lt nu 9— iat goe en,l hppe2oeis sapn cicimPbgp r lhtmamao tSol—gel aoebyai method ntaneeisrncr ehixdoat oetdeaq yPmnsthse ruasscihsevtmaedipde copra2o l1s i0t ion, a no irrou etrtaeidrseoyttatmc2z pppbrrlyoea ppseamrrate-yd er o nftoiiiftlt rmai ndieu m iuhpe2aem ioaspt cmaenri lhPmbagpmaolb anoi Eoaommfndfief d cceirhctoatis notinrc uaclt uresa inldi con natoenyeescnretshirnd ta t,Pd eoaeqs hse o rstunitride Silicon nrour ireeiodrptassi1zs temperatures, yoeti ns2u9b4s trate 5ai lirmt2ttioooegspe iyotAoc propernties Pgrreopwanr ation ulBi,Ti;Ota,, oonoalfno dw atfthih ilnm s o ff seullnnet c dvy,, sdPyta chips, p fsoSbsoifooerd ltm edti eocrmoa nbdluec torf| i lm eo nrypoolrLof2sdryaisSilicon t3eomlniap8lmetgto popFesriis3m04 applicsaetnisoonrs, , rrf o oc iiou lnP ctpiygscatosum dpya rative SSnnOO,, :Cu toietffoahoifnirl dn m s A r(iorlN—otncmy2PTn-Bexplained by i oumodel, based maf2w u6on1rc kt ion a0pileValle2ostNotD robctotloI il/di BoafS nsOe;gn,aoss fi t ivmiotdya udldmaietttNiiavoolebn l e hnfohna fneylCge figr m hfarePvd slcrealyheatN,ukolSensors vueypp enslt iorsooneia o1spoPoHreisrcsoe279 i4nuofebdocie sn l1 rr tS ata i oelP ilclayer,s urtfhoaecf e functiodine lecvtarricy inspga ptiica,l ly u orobksnnoSyc, sseSffbo| lh anain swoittrhso y-s tefmioslf m —psruobOpspettrritaicteaesl io ifopeoairdl litmpc emdstPtir 261 modelb,a sed functwiaoo rnk b y ,explained eaaocy rxlmolayl naenloenc-traoqluyetoesu,s BaoSfn O;,s engbsaiostf i vity modulaadtdiimoteintv ea Nl oble 1ea3on4ud s admlduieidc Semiconductors aicoTnqfoona oiuixa Enlf-Nitmo l di deenic gct rochruetmso )rfOixlimd e | chips, seomfi sciodned ubcotftootrro fmi lm Solderable chips Semiconductor 8f4ido glfiomrtt arssaho,itm ed ea oeng netd a tion 188 monolayers, ditdneeihHoiupcotetTf’ron ocih ia snhelniti gtrn iigob nu tion grade selofn- assfielmmbslZ endS a nd PbS patotfe rned Formation Orientation monolater Self-assembled 19(6G oiarnl dbneo)ruPen,d d aries 84 films, dioafm ongdr ade oritehnteto a tisotna ge anatnidpm hosartushrpeefhb aeoctlCewo oergeryen l ationdeposiintiititoahnle during etcihoinn Hg’ of contTrhiebu tion 63 oxide, Selectiveet ching tetrtaiitsfaornpooirmxuo impd -te io tfCa VnDilu amsK errF 56 prepoafr ation, conditionsd ifferenth aving devpaopsoOirrt giaonno mfilms RuO, r.fo.f- sputterperd opertieelse ctarnidc al Structural 30 surfaPcteos(f,1 11)i fication microscopeyle ctron Scanning mocdbh-fye iC mliomoocsr fa dg letr ohrofeeCw dot nht rol Ordering 56 preopfa rationc,o nditidoinfsf erehnatv ing 279l ayesru,t rhofefa cef unctdiieolnve catrrysiipcna gti ally films RuO, r.fo.f-s putteredp ropertiese lectarnidca l Structural anain swoittrhso ypsitce, mfsoi flm —psruobpOseptrtrtiaicteaesl oxide Ruthenium 222 inclusion, per metallization, 14 cobpypf eilrm s aolfu minpieuromfp otircmEaanln hcaen ced cop- contawcitt-hl eveld evicesp ower verotifc al Performance 165f ilZmsn,O s pouft teprreodpo peatrintcdiae lsS tructural Resistivity 145 daerpco vsaictiuounm, 266 layertsh,i n epitIaxniPao ln based sensoNr O, cathodirce abcyti ve prepfialrme do xide titoafn ium Properties Resistance propertieOsp tical index Subject
Titanium Titanium Tin Thin
tetra-tert-butoxide, 9n0i um mEaomaosudvgbsearyippo noowgsrt i ht ion ZrO, zfciihrlecmmo i- cal fnidnieflf ddc ciei rhncctotZeitrrcao-nteirutm-i butoxide aotitsnn ort i2tspwsonirtetra-fert-butoxide, 9n0i umn uui2cod ru brte7aposdlCcsf h bvoTolnpaetotai aaZfrgibOlrcmy,vhod a eweupmtzpsoiihoirrcf snc aigolt- ion g uyo/purcmrr Wrteuaorer iptrat sienaoespoZxiirdceo nium film eei tcr shsrti ei yeane1oedtlo,3nno233 strutcrtiulraZeysre,/r F e/Zr d eiu4s dn cs o aicTofoaoE-tlpmMaroayorgeppnrehesr ottliieocsg ical ninnqofxniuFoalefnt dr athin in lar l ua aioNeoqm-tddllT cu ieiy iZirconium ten ctNroeg 2cTPm ous o0iunterface, iat1aath7is e3rs —ewmabtleire s V,csa2l N hDt tobctotloI/ri hnfiohanfemione ntohlaeorazfsyoi Eecsa rroZnomo dfew Prnrs o perties Cnoe imr fl hg rmcelraaTsiNkluoyvi,iZs omer lness ei Naenimro3as/escoe opsprptouiptcetareltr ieeds u pe0films, es1Z6n5 O Soatfnr du cturCanl dpnr4 r ls gfftSaSoscAiNoohiantnfon coxide Zinc rril sOu dmOa n m d, op, tsy:xia Ciorudn2tsa esue9ebxyp lained tmodel, based ,af2w u6on1rc kt ion bm4i sp lagftBopaPvttehiroifnrrsgeanss itivity eBaSnO;, r ioomffo dulation amNldeodtbialtlei ve ro, wdeo anmapT p 3dlpwt setiaae uen Si,N,-targets, rus;103 rp l terOoasbSogfCohoSrie,steniirtif ryees,iil grmoaifpax lhbeailpsdtauaeet lrs/ip ss olienasd ts emda di(ug so O, tmoe d1h fw i,snni1lion te1ylnrbift ydfr etiophlCgiomSensasni Hi m ,atoNrer,ddp hous n esm) 2s,md y1u spectrpohsocXto-opreyal ye ctron s5lt tobmtoppoeTehnfaioffeehmfer ll 5 6 porfe pcaorndaditifihftoaeinvro,ien nnstg hcee tslaahTt ci,uyeveatcrp.rfo.p-esrptuitetse red tsRuO), enefSoalitfnelr dcmu tscr tiucraall islntirs eo ioei ucnldpulsed laser deposition, 3 r ae 173i ntearitafhrtae— c weaa,st seerm blies l hgbirygo hwlny SCie(O1,1 1) foSoointrfl ui mdesin etse d mienota onhizfEoaeZsoo rnloPc sdfamrr yoe oprewesrnr ties diffractXi-orn ay Steunrsfiaocne svlapayaretyrii,an lgl y dfots2ihuuf7eern 9l fc eatcciteor ni c ebxyp lained model, based a2fw 6uo1nr ckt ion anisotropic, Opsrpyotspiteceramtlsi es fani lm—substrate owift h sgeanss itivity BaSnO;, amooNmdeffoodt bdialutleli avte ion tance, 180 functionW ork capacitance moMsactfnoeIr dnaSu ds cutucur-ree m ents properties SiO,—(n) Electrical oGiotboahnnffaset Ai essr f ace atpepclhineidq ues characterization, membrane t2o2 Surface state gpbaeysn etrationP orosity oamtnehdte hr od am easurements inclusion, 222 opbcpoeytpr ipfceoarlr mance Volumetry Ealnuhmainncieudm ofifl ms roughness 13r0e agtcaohtsfei- dopinFhaa,T anghInsdyRo ed s rtiidces Surface vdiismceostihtyyl aluminum etoaooTfhndffhfe d ee i ctti ves interface, aaisrs—ewmabtleire s at1th7 e3 Properties monolayer Viscosity aEioaetfnsz h dooe mcrersr osw n oZinf pressure 30 surfPaotc(fe1 si1,f1 i)c ation Surface (Galn)P, mocdbhf-yeiC mloomiors cfgd t aerohlrfoeC e wodtn ht rol boroduenrdeadr ies i1n9 6 spectroscoVpiyb Croarrteliatboieotnnw eaetlhne s urfacmeo rpholaongdya n tiphase applications, s3e0n4s too-rpo lycrystallinSei CN films, 114 gfaofsrti I hlnfimSlunasenon n SfcodO eden pfs,o Os t:i,tucciCoodA nnodu yi mt ainopdnh aydrroagonea tnm iorvpheou s- morphology Surface Vacancies cation, 69 Ambient-dSirOia,ee dr ogtehli fni lmasn dt heidri electarpipcl i- 2tspwsoSurface modification nuui2or brt7posfh olbTdsovCntto-polycarystallinSei CN films, 114 aapagefioorcryurp rm/auerteioapTWt intraInflueonfcd ee positcioonnd itainodnh ydrogonea nm orphous- speuoe estcihsrrn siet y composition 1(oibgoiSurface de,n9Gnrost d 6saduti IenaamstbCeoboundaries in ordered (Galn)P, 196 nrhundoneonne)retrdat ra fPdir r3sLogfSopwlpCorrelatbieotnw eethne s urfacmeo rpholaongdya n tiphase a, epiuin9rfrrae hc lhbl eo TeoAeosamapsmolLihoEn wISuperlattices sttsle nafiafoO nrOiero fycA m;a o ;teegrlto meTnStructural and optical properties of sputtered ZnO films, 165 icr oeOy-lir te ss,e eascs,t;cp 1 danvrproperties of SrTiO; films grown on LaA lO; substrates, 39 rt ri4esaourc5tpmscco oacrbpfotoPiEffects of homo-epittaxial nLaAlO; layer on microstructural cusxieaixrrfys uouilatitoi ers ptmmchapadpa6ioStructural properties iytone elalx3ooi dri ri nnvitudettfotoClK ,epropertoifeS sr TiOf;il mgs rowonn LaAI1sOu;b strat3e9s , cimedaeiixf r r e V,s ttti oFs eDraadmEffToectosf h omo-epitaLxaiAallOl ;a yeorn m icrostructural ranne xi iii itsuudStrontium titanate a2dvcaommesena1hp sppir0eppbpiooomunltil ayuered systems, otf215 mrrlsyspiirifmitoeait -lt ceprptsm aadiei amn ldroraiSe itne-uu n,ybd md j eexc t