Table Of Content

s ic pe PTET TERECETTCCUCE COREE EET eT CLL Columnar growth structure and evolution of wavy interface morphology in amorphous and polycrystalline multilayered thin films P. Tardy, Y. Deshayes, L. Hirsch, A.S. Barriere, B. Desbat, A. El Fajri............... verter rere Tree eS Study of Ca,_,Pr,F., solid solution thin films grown on silicon substrates SK. Koh, $.C. Choi, KM. Kim, H.-J. Some, GJ. Cros, BLS. Vome, FS. CRO. 6 cicecs ces scen pata Effects of Cu seeding layer on Si grown by partially ionized beam in plasma enhanced chemical vapor deposition Z.N. Dai, A. Miyashita, S. Yamamoto, K. Narumi, H. Naramoto..... 1... 6.2 ce ee ee ees Crystalline and nearly stoichiometric vanadium nitride thin film by PLD De sk 6S be. ES OE 4 4REAREE OE SAD 4S 54094644 MAD EERE ORO aeeere reese oe eisCalculation of apparent activation energy for the deposition of TEOS-SiO, films by PECVD K.S. Hwang, T. Manabe, T. Nagahama, I. Yamaguchi, T. Kumagai, S. Mizuta... ... 2... 0... eee ee eee Effect of substrate material on the crystallinity and epitaxy of Pb(Zr,Ti)O; thin films EE 0:4 6.8 66-090 5-4 8 Oo Oe UES OS Ee ORE Leak 6% 6 045.00 Oo Re er ERE Deposition kinetics of silicon dioxide from hexamethyldisilazane and oxygen by PECVD J.N. Keuler, L. Lorenzen, R.D. Sanderson, V. Prozesky, W.J. Przybylowicz ... 1... . 2... eee eee ee ee eee Characterization of electroless plated palladium—silver alloy membranes 5. Fane, A. Dames, T, WER, BE. SERED, Fi Tn ic ct eee cee Ke ee HER HL OE Oe Growths tructurea nd propertieso f Fe rich Fe-Ni alloyf ilms depositedo n MgO(001)b y d.c.-biasepdl asma-sputtering Fie a, Fas Ty. Ca CPO es SS in Do 08:06 4 00 ee KK 0 ee TROLS 08 RO cZora—toprmsIofrotsamoBierpxaathnnlfnfe-naoutygre fo d cg—cpetu gnlw sh teOtcue eE. D’Anna, M.L. De Giorgi, A. Luches, M. Martino, A. Perrone, A. Zocco.... 1... .. . ee ee ee ee irate entvtunrne riri-claeStudy of C—N binding states in carbon nitride films deposited by reactive oXeCl laser ablation dceylsnea p lo KI. Sontmenn, M. Pryda, G. Goerigk, R. Lauer, P. Hamme, A. BURGE 0... ccc cee eres erect nee stunnelling microscopy itemicroscopy scanning study by angle X-ray scattering, angle X-ray diffraction, dtransmission electron and wide small Sizes and distances of metal clusters in Au-, Pt-, W- and Fe-containing diamond-like carbon hard coatings: a comparative Y. Hayakawa, K. Fukuzaki, S. Kohiki, Y. Shibata, T. Matsuo, K. Wagatsuma, M. Oku ...............0005. films thin dioxide osmium amorphous and conducting highly of spectroscopy photoelectron X-ray Ci es, Sa. I, BL. GU Bs IE, ob 00 oh 60 66 654 wa e's 60 64a S ESE EES films chromium sputtered magonfe tron content argon embedadned d hardness between Correlation aes 020002 PaRn.Kd. ey.K.ul.kar.Sn.iK.,. ..Lo.boA.,. ...C.ha.urNe.,. B. JayaR.k rishnNaainr,, J .P. XRDa nd PIXE XPS, using films CdTe Sb-odfo ped Investigation ees ee ee ee le ek ee he hee ees ak ek hee eh eeeRR kv ED ae Bs. ls nitride films carbon sputtered magnr.ef.t ron reacotfi vely structure chemiacnadl comopno sitioenf fects interactions ubstrate Plasma 00.... 0. HaJmM.p ikiSatolnlbe.rg,D. .W.. ..Po.lle.y, .T.A.. ..Bo.ok, G.W. Carter, W.B. filmC eofO depovsaiptoiro nc hemicalC ombustion ee ee ee a 0 dw Fw eS k bekas : we ik6 Iis EN UaE Sa Eaye films thin oxide mulotfi -componesnptut terintgar gets faciinn g Process-kinet Charaacntde rizatioSny nthesis eee eee OA ee oe Ck OES REESWEE SFe e AE Ce e5R e ba EDF E device electrolumtihniens-fcielnmt altefronra ting-currdeinetlo efc trics Selection Review Contents 1999 June2 2 347, Volume ELSEVIER 44 127 121 117 112 106 99 91 85 78 72 60 56 46 39 31 25 14 y t i v a ci High-coer ical SAI lTyhaicnr ylic r Epitaxial Effect i Effect i Influence e8 ee eee eee ee ee ewbeae e 60 EO tb Wks ke ... ShenD.. .. ZhouJ,. Li, M. Xun, K. presAsru re ultarta -high preparfeidl ms alloy CoPt MMaaanggdnn eettoeee ee ere Vrorer eeTeeei TEL WangY..-.L.. .F.e.ng.,. .M..-S... Tseng, W.-T.L in, C.-F. -cosmechanplanarization p tichemiacnda l— process dielectric mulotfi layered integtrhaet ion through process isolationt rench shallowU Lcs ee fear area ee ES OD a ee OA aod (ere Fee 000200. BaflJ.uGe. los..S.am.i.g.eJr..,M. .. .Hu., H. deposibtaitohn chembiyc al compoasciitd e poloyfa nilifniel—mps o ee weeBe8 be8 Oe woa e eck be O68 ba Sige eg ee eir, i e substratesL iNobnO ; films thin ZnOof growth ath aBfeo ee eee ee ey eae aere e r es rGe ee REa Be pf of thermal stresses on temperature dependence of refractive index for Ta,O; dielectric films cou,g t tat ay ee a eee ee re es ee an be ke be ss a interffaiclem polymer phthtahlea otc yanine—tcroanndsupcorttci hnagro gne preconditisounbisontfgr a te OOEapplnttedcio tc-rseo lee eeenge Saag ie byeae ig atiee salah ae kwa ee 8 oS ee eb ow a neicctof illumination on the microhardness and elastic properties of thin Ge,Sb4o_,S¢o films sr,o niae eee ee ae a SOO k ea Eee T08 8 8 o0 bec ns kg rT... i eie, cs sMuceotfawozfilnrfhioniinfnei ifel nrcl dadce mtcru ritcsaoobnMechanics and Nanomechanics of Thin Layers it cngsrosti tin a rc uactteudr saepeareeeeeeeeeSapeae ael eeeeereee ew ee e eppbtrbT bBtcfCdofNee rra iw yieaoiahofouoplooNrr fre n r apic- r/frrvmyede isMLTuimPaHeer eseteseai arrrntarsdeirtSylsoi sd ro paie eti n dl,rseo l scnut rigviec amicroscopy and ion beam lmethods , Photochemically induced oxidation and silver deposition on amorphous germanium sulfide films studied using atomic force A study of the NiSi to NiSi, transition in the Ni—Si binary system spectroscopy infrared Study of the chemistry of NH; on aluminum nitride and oxynitride under steady-state conditions using external-reflection Surfaces, Interfaces and Colloidal Behaviour ae ee ee a ee ee Aerosol-gel deposition and low temperature heat-treatment of SiO, layers a kb bee wk w a sew bb od be ee we oe oe ees An X-ray absorption study of the local structure of cerium in electrochemically deposited thin films i a eii g alk eB ob a ee be ee Thickness and quality of spin-coated polymer films by two-angle ellipsometry se ee ke OW Wh Ob od oe Ow WS 8 Oe ee Scale Be Chemical vapor deposition and structural study of Lay; MnO;_; thin films Pe eS es ee ee EERE CL UR SEE CORE Transparent conductive ITO thin films through the sol-gel process using metal salts i aca a el a ae a ne EOS ak ak bee OE wb Ce A ee ae ee ee In-situ observation of CulnSe, formation process using high-temperature X-ray diffraction analysis Ee eee ee ee ee eee ee eee ee ee ee ee ae ee ee ee eee Exceptional anisotropy in conductivity and mechanical properties of poly-3-octylthiophene films vi Contents | ecNOOaeOeeena1aasS ikedE eaasn A Ke eg S eoeeseaJKPBAeaepDRD.ee aeeureeeen....ede l. e eo Aita ..eeo me ssr.,sei . un Os.,IRekeaaateeeSb£8Wwbe rC,heea eOee6a ee. h k Rskh6e .e e e.a E , ws k 8 6 248 241 238 233 229 226 220 214 208 201 195 184 17 167 161 155 151 14 , t t e g d o l A leafletd escribinogu r requirementiss a vailablfer om the Publisheurp on request. The publisher encourages the submission of articles in electronic form thus saving time and http://www.elsevier.nl/locate/tsf For more information on Thin Solid Films, please visit our website at: ee NE Oe ET 5 055 oe eho eed Roa ees ORE ES ORS ERE eee Ae ee Se ee ar EE EE Ss 6 bn 6 6 he BES 4 Ee OO 04 20 Ow ROD ee el Oe ie ET, a I, Cs NS 5 ok ce Ke eee ee eee RES Ae Sa 2 eS spectroscopy annihilation positron by films oxide tungsten deposited vapour chemical thin of Study as ey, ee es ee ey Ba Ls PU I I ha we ee ee a eS 0 0k we e field electric by induced phthalocyanine copper of films thin vacuum-deposited ordered Highly ee I 6.685. 28 Fh-6: dae aE Ae ee ee Ce ed i oe oeF-doped deposited by spray pyrolysis physical properties of CdO thin films Some es es es as, Ss I I bt oe ck a8 8s Oe 8h Oe eee electrodes copper of photoresponses on benzotriazole and ions chloride of effects The i EY te IIE sy ig. 4 sw pba) Boe. 6 alk piled oe ke ee ce ae oe Ok ee ee The effect of growth parameters on the electrical, optical and structural properties of copper phthalocyanine BehaviFoilumr Matter Condensed e eee eeen ergea s tieg a esB iee as ea Ses agi g ISR IaIn Aes applications microelebcutdrgoenti c thermlaolw for bilayers Co—Niw ith reactions Silicidation Actuaatnodr s Sensors DeviceFsi,l m Thin STSOR eOE e a ee ewOe h5 ae EeEs eeee ee interface aira/tw atera cid perfolfu orostesatruidcie s Monolayer a eeee e err ee ees eee ee eee Pe Pere RR ee3 8 fe interface air/twhaeta te r crystallsi quid Chiorfa l transitpihonass e2 -Do f observaDtiiroenc t PER RE OS DES ERE eweee ah ow kn I I Ss SSta A,Ses nanoparStniOc,l es surfactfarnotm- stabilpirzeepda red multilayers Particulate Films Relataendd Biological Langmuir-—B avoiding rek ee eR e ee AS a OA OE e e oe eo ee ewe w ae thin films oe ae ie e CeEee e E oree e SOASMA SAON e e e e e yin e e e ee e S 2 g ee e r r o rs. 3 3 3 2 2 289 284 263 258 0 0 0 9 9 9 7 2 9 5