Thin Solid Films 1999: Vol 345 Index

8 Pages·1999·2.8 MB·English

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graphy, 185 Heterobjiupnotclrtaainros ins tors Negative tone hybrid sol-gel material for electron-beam litho- tion, 45 Electron-beamwriting filmbsy O ,/FTES-hpellaiscmcoahn e micvaalp odre posi- coupled hydrogen plasma, 172 FormatainodCn h aracteroifzt ahteFi louno rocarbonated-SiO, Electronic properties of MOS capacitor exposed to inductively Helicpoln asmsaou rce Electron trap centers pulsedh eliconw ave plasma,1 24 as spin probe for plasma diagnosis of plasma treatment, 85 Characteroifss teilcbfs i asv oltaagned p oly-eStic hiinng Plasma-indufrceeedr a dicalosf p olycrystallcianreb ohydrates Helicon plasma spin Electron resonance ParammeetaesruosrEf eCsyntChmesiRs ,e Fnp:tl/ aA1sr3m 0a , films, t2och3fee m entite HeateLda ngmupriorb e Effectosf t he powero fe lectrosnh owearn ds ubstratbei aso n suspepnadretdifc oldrei sf fekrennutd nsuemnb e1r4s0, Electron shower spheric Heaatn mpdressur eo, metnrtanubsmfee trw ae tehne rpmlaalsa nmda 134 Heat transfer Diagnosoefsi nductivecloyu pleSdF ,a ndN ,p lasmaast atmo- Electron density Xdt2plasma, C,F:/Ar 1oPmE3faeC0 raR as muerteemres nt ie-7fc3rfhplasma cyclotron afogsagodfErleescotnraonnc e rniinrrrynreazil aia dotcemqiei Dtotsrmoitefilm, smCeVtDha ne 71 unnnihhehff ner et oeies dmpsan neiiGsiet , Photoinduceelde ctro-motive-offo rsculef urd opetdp lasma siurni ntzamoeaedi-nXdt2dnElectro-mo tiveen tiec-7 n fiec3rfcn h afogsagodfr330 substrate, silicon -neiinrrrynreazilo aia dotcemqxiei Dtmotsroite sCharacterizatoifo cenr ia/yttrsitaa bilizezdi rconiga rowno n unnnihihhef fner et dieoes dmpsan neeipension, iGoite ,284 ts rurni ntimaoeadespprreapyairnegd -biy nsiidbed6nasfonsY uiniusl cbB-mks Cset lrO a tes en tnoomec7 netnn iuepp haa crn olPoDgbbmopatmmeasaunrde ments properties Electrical c-searriffileynL eiona eo oaa c CtxtdnmpGmsneiii- aaarmsdoeditrtaa n neoeaede1, phuewlplas1liev2acde4so nm at, n rtri4 n iiie6vaaopveootllcyth-aiSgnieg n StmoisbuCoaapeihfnlaa dfsr aicnt eristics llnt upncril s nedoaac eDtrcyh ing nreGnpensrearmlnnlmotl eaivasoppgdiincal1sni 14n0kcu dnfmiopubfradefs rserutressien,cpnl ete nsd ewd rillnnt8taomgroesa ggo2t,wa oscnp w h Aamfedonsa snhapnatald hba teesrrtmaammHwnnoaaesed lmafe teenr n tum y oontiefnounarm rrasud err d e ittleergdGeforcDern ag krry geillitaitsysn lbio Ap, cg3oIftsuc330s usbisltircaotne , whp ohi 8t fTop lai OtlmorGsongz risortcowcaoefobnrC ini hliaaia/rzy eta tdcr tiear ization isngeca csenas aslay(erss Htt 2Double t oDaBr7irla°T0o ny ) bhddInA29pa rs eBwc-niCudptrVilhsk aDoers tsmo,a n ates ssi,eeoe ni iptlu swGsoetbtGa omfbfe tyiohalm ixonmepnifsst rd D aoeelc p eosssi ti,on alorlara Praose-l r/8 je dl-Diketonates unGoini151 plaarscm fau,ste ho ef spectrreusmopT livmeed aucdeA2fm1ti2hlb imipnsla u,arl tytiercral fei ne etd splasma i aFrucs e ootxiainno dzdxeoii fnd cec ahnadDr aecptoesriitziaotni on n C¢o/Cr films, 236 toifo n Diffusion comthpeoo ns i- process sublimvaattcihuoeonu f m effeTchtse graphy, 185 18 sputtmedarcigb nnygpe ,at rreodn lithefol-om era cstothelrtyr-oobigNnnraeee-ill gb d ae taimv e pref-i lmnsi tricdaoerf b onp ropebrotanindedis n Sgt ructural eleDmiefnftrsa ctive speicntfrrotasrrecaFdono spufyro iremr 24m4e tualhtntboahdrynde ae srv ,mi aolle t-irradiation 130 plasma,C ,F3/EACorRf measuremPeanrta meters ponalo yfvsreiolplm rfs eitelphsmiaqsnru Seipdoi xn-- on-glass plasma Fluorocarbon Dielectrics 240 filmst,h in oxitdien doped 67 depeonbsheiaiatinmimocpos nnleo ,aud rn cte- ion fluoofr ine- deposviatpioorn chemical Atmospheric-pressure polfam sbemyaa nb si ogmrDaaotdLfei CreP inratel psa ration Fluorine carbDoina mond-like | duct, filtebreinngd 55 groCwVtdDho,i n a emfgfoaenscD dti luent double offa-np lane throughp laasrmca vacofu um Transport groDwitha mond duct Filtering 55 groCwVtdDho,i n a emfgfoaenscD dti luent 200 coatingcsa,r bon diamond-like filmsD iamond siliocfo n-containaidnhgeo sni on stress resiodfu al effect The 50 sourccaaesr ,b obne nzebnrewoismtt iihon na ted mode Failure depodsiit-hiaen m odnetdpho oens istp eciaeodsfs Roorlbee d depDoisiatmioonnd 292 lipids, diacetyl6edn0eer i avcaitdi zed amionfo studies microscopy epi-falnudo rescenceM onolayerj et,p blyafs itlmhmaisn d oifa moncdha rSatcrtuecrtiuzraalt ion microscopy Epi-fluorescence Diamond 341 index Subject
Low Low Laser Interfaces
The Two-dimensional a-SiC Raman CharactDeerpiozsaittiioonn Dependence Application Hy Hy Hi Hi 34
Nitriding 1tc263 stressr,e sainddu aTl extsutrraet es: 9ie7achugSl h3asSocoatings is(Ti,Cr)N -ir sss3ttu0neab4ei- ln laess oaPnnV dD Ti/TiN efCgilOcoil -harn,wqepdvcpiSy-gcoatings utcNiftrides rreeahqi etihreoppeuC-,i scooa7msm vsesiissrues, 312 l iieulsi icc irsttraodrhfpmhce iyaoElecotrochromic lfeoiili ot rcn pggace ncm,rohhate sr oaysNickel -oxide lnemoansidedmatwttucte po1 aiatafin307 evabpeoaraemlt beiycot nr,do net poorss ited 6exrnlrosav7grioglnmppdice edaiaoinis ltitarte thfeirtlmhmii ns -m a nnigocnak neilt trheeeoa aftt Em fefnettcn t nf n—,aysog u ud ean cdnrirpsods pamanganithe ueuieNickel paipfrpamacrtn su lrt-ttetgrsfiigiitrtd olpn130 plasCm,aFE,o;C f/R A rc measPuarreammeentte ras eciie unledal bnr ocu et7smu-Negative ersiion ct iit dl eecrio iphdhsordnomfroTcepvlaapsomraa tion, ieilcnao34 of lash ssfhoipggetasrc nc eceohh nLps,ro rs- c alymtihne rmadle pcolosufis tstietorun d yd ypnaMmoilcesc ular idoersaayte wtgps r1inaearmoNanoschaotlc leu ster 8osle-uva8niltcse tnsnvsogleiuc preicurrsioourt e1,8 8 iinya,arnratlla y nesolriiL eo fowicecranitrsiidlei cnonav niao s-isolnii zcgeornd ol awynea r-sS iCi -rdoondsnlse nn m g i mzNano-materials eutdircbi2e leo0recuan8—ahsci bdfchocBnmttzihaaefyieli elarr prq vodmrdb ouIcb178 e dsa osleo e cgnuisnatplaesma s-t,isource, meluelcttir-ocn3a thode sRrobefees cauemlnt sts emtnte ziu3re idetlbi0rtisd s ogzssopublcroeaecsaleemm Mca ut lrtoni -cathode rct tnetifroirir ar noadcipbbcf t60 ut2ewsaaiioiehl1 /nrllln,it2ytiam in rti jpbeftltyidoh,al i ifcsmnS ahs mtam oarrotu aancctdotu ezrosrailzz actaion ya atci,iexhfxnen frnl ndrai iddi iec nrdd Morphology a eaee c t18d2gi plslarcootceh wplwasa l tsrahugnroeaedsr ep, eC9e0olnVr wahiDoestnreirkgiyn g analytic sobommfdona oeiforus d tterrlaiIoi lbsu tions A-n sazr,innbfefotamngt s hlteacuaseaieMsiomnutlea tion ICarlo m enprvoncpdoevfniues cchpdliipaicdes,t ylene ra oladceirdi vatiz1ed 292 ritloaytr7ealrraudi 2stiesoppceior MEoMonoalnaedyp ie-rf lumoirtcersocssteucndocoifeape mysi no cudmsranlnxoolfo roOapdc ep ge nepau,odIcMonolayers poSce e cc pn oltsn ritydurae ttiu oppsdtio3v4 evfalpaot1sprhla atsimoan, cnllmre ire5tieeasao 6licand Cbs yMmciioledcuylnaasrmt iuocdfcsy l uobsdteepro siintt hvieornm al t oym naonfeomma drdl drepp ubiyuoMIoleculdnayrn amiscismt ulation lcoif tcnnr-adsi,dee eXtsc iuadd2sphericp ressure,1 34 e-matct i7crtamtfi3haggifei o saodaapttNaS lm,cnFaoi ood,sD-nfu ffo d mi puaalcsget ndio vseelsy nrrroynoininrneriaaantn zl iadotqcii e Mpliaxsemda- gas me lmotsrteoitunn snhhhie fefn r tieoess dman microcrystalline neisilicon,, iot1i7 t ts ax6uni tr7imoeaghphdeiilpggaohhss -midate inosni ty dn-piapmdTmofhio iec rowave dfraotre ene ntlnftira c ,aid seogpssplasma nin cTdoMicrowave dnappau-hifwuareurmsoa ttoctt -txformatiorn,i ioIftp3222 t-errtaigcoihf8Teddoili lledo rOb innempboyl ymer eteItomsuircfraocset-rduicrteucrteeTffdidih ll immn s u -ssm oidxnt enc iid apolystyrene nodMiicrostructurefdi lms tnseuas iml formation, ocoupled hydrogen plasma, 1722 22 ynsaisElectronic properties of MOS fcaipsabclfiutpoymirr olem xTfpmliohassecydic trmoen ione- duscdrtitvi elryr ueccltteudr ed , Microprinting drogen plasma cleaning graphy, film, 185 Cm71eV tDh ane dploapsemda Negative tone hybrid sol-gel Peosmatuflheril eaolf ctfuort orelre ictornon--dbemaumo clittheoi- dv e-fo brid sol-gel Methane lpolwa-stmeam perature CVD, 75 e90n hanced organosilicon Gas-phase diagnosis and high-rate growth of stable a-Si:H, soobomiinffbeot shlueae rvcviuaoltrei so n In dhiigahg-nroasties Ggraosw-tphh ase a-Si:H, gher-silane aos7t5fna db le spectrometry microcrystalline Masssi licon, 7 pbmspaayurg tentdee rtirnogn, The high-density microwave plasma for high rate deposition dofc 18 Hpilgahs-mdae nsity pprreo-p erties bonding Saocnfiitnfatlrd rrmu biscod tneu ral microcrystalline silicon, Mag7 netronsp uttering The high-density microwave plasma for higbh reate ndepdosi tfioni olf teringd uct, | Tptofrhlfara-nospsumlpgaaoh nr et gh rate deposition double ovaarnfac c uum transistor (D*HBT), M2a70 gnetic filters A new InGaP/GaAs double delta-doped heterojunction bipolar 2 Subject index
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SemiconduScetlof rs Selective Scanning Radio
EffectsP lasma Charbaicats eriSsetlieccst ive Scanning Plasma-nitrided The ReductionP lasma Raman Structural DiagnoTsiemse Low PZT Pyr 344
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