Table Of Content

R Thin Solid Films 336 (1998) 391-392 Author Index of Volume 336 Aarik, J., 295 Calamiotou, M., 218 Ernst, F., 248, 252 Hansen, O.P., 366 Abdallah, M., 256 Cappuccio, G., 153 Esteve, D., 277 Harteros, K., 218 Abrosimov, N.V., 112 Caymax, M., 227, 299 Etoh, K., 42 Hartmann, R., 92 Abstreiter, .G., 2, 252 Certier, M., 381 Ezoe, K., 34 Hasegawa, H., 22 Adrian, H., 168 Chen, G., 386 Hassen, F., 370 Akane, T., 232 Cherepanov, V.A., 183 Falk, L., 76 Hatzopoulos, Z., 218 Aktsipetrov, O.A., 291, 350 Chrysanthakopoulos, N., 218 Falke, M., 201, 222 Heinzel, T., 38 Albouy, P.A., 373 Ciach, R., 63 Faryna, M., 63 Henini, M., 9 Alkemade, P.F.A., 84 Cibert, J., 286 Fedyanin, A.A., 350 Herzog, H.-J., 137, 141 Amirante, E., 145 Ciorga, M., 366 Fink, C., 309 Herzog, J., 313 Anil, K.G., 309 Cloitre, T., 326 Forchel, A., 271 Hinneberg, H.-J., 201, 222 Aourag, H., 381 Cohen, K., 205 Fortina, S.C., 9 Hofmann, K.R., 29 Arnaud d’Avitaya, F., 130 Colard, S., 362 Francke, V., 13 Holiney, R.Yu., 63 Arnoult, A., 286 Collaert, N., 299 Fujikura, H., 22 Hollander, B., 130 Aubertl, P., 163 Conde, O., 58 Fuks, D., 149 Honerlage, B., 326 Audinet, L., 213 Coonan, B., 130 Horn-von Hoegen, M., 16, 29 Aulombard, R.L., 326, 381 Cornet, A., 218 Gacoin, T., 213 Houdy, Ph., 373 Aurand, A., 358 Craciun., F., 281 Gallas, B., 124 Howard, D., 227 Crean, G.M., 130 Gandais, M., 163, 213 Hock, G., 141 Ballet, P., 354 Garry, G., 163 Hulicius, E., 80 Banhart, F., 116 Dalla Torre, J., 277 Ge, C.Z., 172, 386 Huth, M., 168 Barbier, A., 160 Darowski, N., 271 Gebhardt, B., 201 Bauer, E., 16 Dauger, A., 156 Georgakilas, A., 96, 218 Iannaccone, G., 145 Bauer, G., 89 David, C., 92 Giesler, H., 222 Ikeda, M., 34 Bauer, M., 104, 109, 319, 347 Dawson, P., 256 Gilliot, P., 286 Ishii, K., 34 Bay, H.L., 26 De Meyer, K., 299 Giraud, S., 232 Ishikawa, T., 232 Becker, J.S., 26 Debarre, D., 240 Gliick, M., 141 Ito, K., 42 Becourt, N., 218 Delimitisi, A., 96 Gomes, M.J.M., 58 Ivanov, S., 76 Beddies, G., 201, 22 Dentel, D., 49 Gorbach, T.Ya., 63 Ivanov, S.V., 377 Behammer, D., 313 Deparis, C., 358 Gordon, A., 149 Ivin, S.V., 191 Berbezier, I., 124, 256 Derrien, J., 130 Goryll, M., 227, 244 Berggren, K.-F., 130 Dettmer , K., 73 Governale, M., 145 Janssen, G.C.A.M., 84 Bergman, J.P., 377 Di Trolio, A., 153 Grabolla, T., 306, 309, 313 Jia, Q.J., 236 Beserman, R., 73, 205 Dieny, B., 160 Graf, T., 89 Jiang, X.M., 236 Bimberg, D., 208 Dinelli, F., 281 Gravesteijn, D., 227 Jiang, Z.M., 236 Bisch, C., 84 Dinescu, M., 281 Grey, R., 354 Jorke, H., 137, 344 Bischoff, J.L., 49 Disseix, P., 354 Grilli, E., 9 Joyce, B., 124, 256 Boellaard, E., 84 Doll, T., 309 Grimm, M., 306 Bolmont, D., 49 Dorfman, S., 149 Grishin, A.M., 291 Kaesen, F., 309 Boucaud, P., 240 Durand, H.-A., 42 Grutzmacher, D., 92 Kahler, D., 16 Bouchier, D., 240 Duschl, R., 336 Gueurts, J., 381 Kammler, M., 29 Boyd, I.W., 340 Dvurechenskii, A.V., 322 Guinebretiere, R., 156 Kanter, B.Z., 179 Bremond, G., 256 Gutjahr, A., 116 Kappius, L., 26 Breuer, U., 26 Eaves, L., 9 Guzzi, M., 9 Kasper, E., 104, 109, 319, 344 Brinkmann, D., 286, 326 Eberl, K., 248, 336 Kataoka, I., 42 Brunner, K., 252 Eisele, I., 2, 309 Hackbarth, T., 141, 313 Kayser, R., 120 Bryja, L., 366 Ensslin, K., 38 Haibach, P., 168 Kegel, I., 2 Butz, R., 69 Erguig, H., 381 Hansch, W., 309 Kibbel, H., 137, 344 0040-6090/98/$ - see front matter © 1998 Elsevier Science S.A. All rights reserved. PIT S0040-6090(98)01639-3 392 Author index Uchida, M., 32 Wilde, J., 197 Ying, S., 59 Zhang, Y., 178 Williams, R.S., 27 Yoshida, M., 127 Zhihao, Z., 59 Valentini, A., 80 Wu, J., 214 Young Lim, D., 214 Zhou, L., 112 Vedeshwar, A.G., 270 Wu, N.J., 225 Zhu, K., 64 Vedpathak, M., 13 Xu, J., 130 Zhai Cui, F., 214 ii ee4 Xue, G., 112 Zhang, L., 64 Zohar, Y., 97 Wang, H., Zhang, T.Y., 97 Zoller, A., | Wang, Y.., Yamamoto, S., 85, 134 Zhang, X., 97 Zomorrodian, A.R., 225 thin... fins” Rast EV Thin Solid Films 336 (1998) 393-401 Subject Index of Volume 336 Adlayers Capacitance spectroscopy Annealing of CaF, adlayers grown on Si(111): investigations of Formation of zero-dimensional hole states in Ge/Si heterostruc- the morphology by atomic force microscopy, 120 tures probed with capacitance spectroscopy, 332 Adsorption Cathodoluminescence Adsorption induced giant faceting of vicinal Si(001), 16 Formation of highly uniform InGaAs ridge quantum wires by Al/AI1,0; multilayers selective molecular beam epitaxy on novel InP patterned RF-sputtering deposition of Al/AI,O; multilayers, 373 substrates, 22 Allotaxy CdS Allotaxy in the Ni—Si system, 222 Epitaxial growth of ZnS on CdS in CdS/ZnS nanostructures, a Al,O; 213 Epitaxial growth of LiNbO; on @Al,0;(0001), 163 CdSe/ZnSe heterostructure Aluminum TEM studies of self-organization phenomena in CdSe frac- Orientation of aluminum nuclei on Si(100) and Si(111), 84 tional monolayers in a ZnSe matrix, 76 Antiferromagnet CdSe/ZnSe Growth and magnetism of Co/NiO(111) thin films, 160 Optical studies of carrier transport phenomena in CdSe/ZnSe As-—P exchange fractional monolayer superlattices, 377 Photoluminescence studies of As—P exchange in GaAs/GalInP} CdTe quantum wells grown by chemical beam epitaxy, 358 Dynamical properties of trions and excitons in modulation Atomic force microscope doped CdTe/CdMgZnTe quantum wells, 286 Coalescence of germanium islands on silicon, 109 CdZnTe Annealing of CaF, adlayers grown on Si(111): investigations of Valence band splitting in Cd,;_,),Zn,Te epilayers, 205 the morphology by atomic force microscopy, 120 Chemical beam epitaxy Cluster-size distribution of SiGe alloys grown by MBE, 53 Photoluminescence studies of As—P exchange in GaAs/GaInP, Correlation between the sign of strain and the surface morphol- quantum wells grown by chemical beam epitaxy, 358 ogy and defect structure of InAlAs grown on vicinal Chemical vapor deposition (111)BInP, 218 Epitaxial growth at high rates with LEPECVD, 89 Early stages of growth and nanostructure of Pb(Zr,T1)O3 thin Influence of grown-in defects on the optical and electrical prop- films observed by atomic force microscopy, 281 erties of Si/Si,;_,Ge,/Si heterostructures, 227 Lateral ordering of self-assembled Ge islands, 252 Optical and electrical characterization of SiGe layers for ver- The influence of stress on growth instabilities on Si substrates, tical sub-100 nm MOS transistors, 323 124 Orientation of aluminum nuclei on S1(100) and Si(111), 84 TEM and AFM study of perovskite conductive LaNiO; films Photoluminescence of self-assembled Ge dots grown by ultra- prepared by metalorganic decomposition, 386 high-vacuum chemical vapor deposition, 240 Boron activation energy Morphology and photoluminescence of Ge islands grown on Hole mobilities in pseudomorphic Si,_,-,Ge,C, alloy layers, Si(001), 244 336 Cluster-size distribution Boron diffusion Cluster-size distribution of SiGe alloys grown by MBE, 53 Retarded diffusion of boron in Si due to the formation of an Complementary metal oxide semiconductor epitaxial CoSi, layer, 26 Silicon quantum integrated circuits — an attempt to fabricate BST thin film silicon-based quantum devices using CMOS fabrication Fabrication and electrical properties of sol-gel derived (BaSr)- techniques, 130 TiO; thin films with metallic LaNiO; electrode, 172 Core/shell Cadmium Epitaxial growth of ZnS on CdS in CdS/ZnS nanostructures, Diffusion of Cd, Mg and S in ZnSe-based quantum well struc- 213 tures, 208 CoSi CaF, The growth of an intermediate CoSi phase during the formation Annealing of CaF, adlayers grown on Si(111): investigations of of epitaxial CoSi, by solid phase reaction, 201 the morphology by atomic force microscopy, 120 Critical thickness Growth of Ge on H-terminated Si(111) surface, 34 0040-6090/98/$ - see front matter © 1998 Elsevier Science S.A. All rights reserved. PIT S0040-6090(98)01640-X 394 Subject index Cross-hatch Structural studies of epitaxial PbTiO; films by optical second STM study of step graded Si,_,Ge,/Si(001) buffers, 100 harmonic generation, 291 Cross-hatch pattern Epitaxial zirconia films Defect distribution and morphology development of SiGe Epitaxial zirconia films on sapphire substrates, 156 layers grown on Si(100) substrates by LPE, 116 Epitaxy Crystallographic structure The influence of carbon on the surface morphology of Si(100) Structural studies of epitaxial PbTiO; films by optical second and on subsequent Ge island formation, 69 harmonic generation, 291 Etching pits C—V measurement Crystal microstructure of PbTe/Si and PbTe/SiO,/Si thin films, Tunnelling currents in very narrow p —n’ junctions, 344 196 DC-electric field effects Exchange coupling Oscillatoric bias dependence of DC-electric field induced sec- Growth and magnetism of Co/NiO(111) thin films, 160 ond harmonic generation from Si—SiO, multiple quantum Excitons wells, 350 Dynamical properties of trions and excitons in modulation Defects doped CdTe/CdMgZnTe quantum wells, 286 Influence of grown-in defects on the optical and electrical prop- Eximer lamp erties of Si/Si,;_,Ge,/Si heterostructures, 227 Thin tantalum pentoxide films deposited by photo-induced Optical and electrical characterization of SiGe layers for ver- CVD, 340 tical sub-100 nm MOS transistors, 323 Faceting Diamagnetic shift Adsorption induced giant faceting of vicinal Si(001), 16 Magnetoluminescence measurements of two-dimensional hole Faraday rotation gas, 366 Two-dimensional and zero-dimensional structures of semimag- Dielectric constant netic semiconductors prepared by pulsed laser deposition, Thin tantalum pentoxide films deposited by photo-induced 176 CVD, 340 Ferroelectrics Diffusion Structural studies of epitaxial PbTiO; films by optical second Diffusion of Cd, Mg and S in ZnSe-based quantum well struc- harmonic generation, 291 tures, 208 Films Dimethyl aluminum hydride Dislocation pattern formation in epitaxial structures based on Orientation of aluminum nuclei on Si(100) and Si(111), 84 SiGe alloys, 112 Dislocation density Four-wave mixing Crystal microstructure of PbTe/Si and PbTe/SiO,/Si thin films, Dynamical properties of trions and excitons in modulation 196 doped CdTe/CdMgZnTe quantum wells, 286 Dislocations Fractional monolayer Dislocation half loop formation in GaSb/(001)GaAs islands and Optical studies of carrier transport phenomena in CdSe/ZnSe steps role: a Monte Carlo simulation, 277 fractional monolayer superlattices, 377 Structural characterization of SiGe step graded buffer layers TEM studies of self-organization phenomena in CdSe frac- grown on prestructured Sif001] substrates by molecular tional monolayers in a ZnSe matrix, 76 beam epitaxy, 92 GaAs and GaP layers Domain wall Growth of III-V semiconductor layers on Si patterned sub- Domain wall splitting and creation oft he fine domain structure, strates, 63 149 GaAsg6/lngG ;4aAs/pGaA s Doping X-ray diffraction analysis of strain relaxation in free standing Surfactant-mediated epitaxy of Ge on Si: progress in growth and buried GaAs/GalInAs/GaAs SQW lateral structures, 271 and electrical characterization, 29 GaAs/GalInP, quantum wells Doping superlattices Photoluminescence studies of As—P exchange in GaAs/GalInP> Retarded diffusion of boron in Si due to the formation of an quantum wells grown by chemical beam epitaxy, 358 epitaxial CoS, layer, 26 GaSb/GaAs interface 2DHG Dislocation half loop formation in GaSb/(001)GaAs islands and Influence of grown-in defects on the optical and electrical prop- steps role: a Monte Carlo simulation, 277 erties of Si/Si,_,Ge,/Si heterostructures, 227 Ge Drain induced barrier lowering (DIBL) Surfactant-mediated epitaxy of Ge on Si: progress in growth The vertical heterojunction MOSFET, 299 and electrical characterization, 29 Electrical transport The influence of growth temperature on the period of RHEED TEM study of InAs self-assembled quantum dots in GaAs, 38 oscillations during MBE of Si and Ge on Si(111) surface, Epitaxial growth 183 Low-energy electron microscopy of nanoscale three-dimen- Ge-content sional SiGe islands on Si(100), 262 Optical on wafer measurement of Ge content of virtual SiGe- Epitaxial thin films substrates, 347 MgO surface microstructure and crystalline coherence of Co/Pt Ge-film growths superlattices, 168 Growth of Ge on H-terminated Si(111) surface, 34 Subject index 395 Ge island Heterostructure field effect transistors Lateral ordering of self-assembled Ge islands, 252 Silicon quantum integrated circuits — an attempt to fabricate C-induced Ge dots: a versatile tool to fabricate ultra-small Ge silicon-based quantum devices using CMOS fabrication nanostructures, 248 techniques, 130 Morphology and photoluminescence of Ge islands grown on Heterostructures Si(001), 244 Influence of grown-in defects on the optical and electrical prop- GeHy, erties of Si/Si,_,Ge,/Si heterostructures, 227 The growth kinetics of Si,;_,Ge, layers from SiH, and GeHg, Raman and photoreflectance studies of electronic band bending 19] at ZnSe/GaAs interfaces, 381 Generation mechanisms HgCdTe films Dislocation pattern formation in epitaxial structures based on Electrical properties of HgCdTe films obtained by laser deposi- SiGe alloys, 112 tion, 188 Germanium High deposition rate Carrier mobilities in modulation doped Si,—,Ge, heterostruc- Coalescence of germanium islands on silicon, 109 tures with respect to FET applications, 141 High resolution electron microscopy Composition and structure of Ge islands grown on Si(001) and Epitaxial growth of ZnS on CdS in CdS/ZnS nanostructures, of SiGe grown on Si mesa, 73 2i3 Formation of zero-dimensional hole states in Ge/Si heterostruc- High-resolution X-ray diffraction tures probed with capacitance spectroscopy, 332 X-ray diffraction analysis of strain relaxation in free standing Role of hydrogen during Si capping of strained Ge or Si;_,Ge, and buried GaAs/GalnAs/GaAs SQW lateral structures, , hut clusters, 49 271 Structural properties of Ge nano-crystals embedded in Si0, Hut clusters films from X-ray diffraction and Raman spectroscopy, 58 C-induced Ge dots: a versatile tool to fabricate ultra-small Ge The influence of carbon on the surface morphology of Si(100) nanostructures, 248 and on subsequent Ge island formation, 69 Hydrogen Germanium islands Role of hydrogen during Si capping of strained Ge or Si, _,Ge, Coalescence of germanium islands on silicon, 109 hut clusters, 49 Graded silicon germanium buffers Hydrogen atom terminated Si STM study of step graded S1,_,Ge,/Si(001) buffers, 100 Growth of Ge on H-terminated Si(111) surface, 34II—VI nanos- Grazing incidence diffraction tructures X-ray diffraction analysis of strain relaxation in free standing Epitaxial growth of ZnS on CdS in CdS/ZnS nanostructures, and buried GaAs/GalInAs/GaAs SQW lateral structures, , 213 271 II-VI semiconductors Grazing incidence X-ray diffraction Diffusion of Cd, Mg and S in ZnSe-based quantum well struc- The influence of stress on growth instabilities on Si substrates, tures, 208 124 InAlAs Growth Correlation between the sign of strain and the surface morphol- Growth of solution cast macromolecular 77-conjugated nanor- ogy and defect structure of InAlAs grown on vicinal ibbons on mica, 13 (111)BInP, 218 The influence of growth temperature on the period of RHEED InAs quantum dots oscillations during MBE of Si and Ge on Si(111) surface, Self-aggregation of InAs quantum dots on (N11) GaAs sub- 183 strates, 9 Growth kinetics InAs/GaAs The growth kinetics of Si,;_,Ge, layers from SiH, and GeHg, TEM study of InAs self-assembled quantum dots in GaAs, 38 191 Influence of external ohmic load Hall coefficient Tunnelling currents in very narrow p —n’ junctions, 344 Electrical properties of HgCdTe films obtained by laser deposi- (In,Ga)As/GaAs layers tion, 188 The determination of e;4 in (111)B-grown (In,Ga)As/GaAs H-band, Al,Ga,.,As/GaAs heterointerface strained layers, 354 Magnetoluminescence measurements of two-dimensional hole InGaAs ridge quantum wire gas, 366 Formation of highly uniform InGaAs ridge quantum wires by Heat-pulse annealing selective molecular beam epitaxy on novel InP patterned Low temperature epitaxial growth of Si on Si(111) by gas- substrates, 22 source MBE with heat-pulse annealing, 232 Ion assisted molecular beam epitaxy (IAMBE) Heteroepitaxy Ion assisted MBE growth of SiGe nanostructures, 104 Cluster-size distribution of SiGe alloys grown by MBE, 53 lon bombardment Dislocation half loop formation in GaSb/(001)GaAs islands and Ion assisted MBE growth of SiGe nanostructures, 104 steps role: a Monte Carlo simulation, 277 New virtual substrate concept for vertical MOS transistors, 319 Surfactant-mediated epitaxy of Ge on Si: progress in growth Islands and electrical characterization, 29 Composition and structure of Ge islands grown on Si(001) and of SiGe grown on Si mesa, 73 Photoluminescence of self-assembled Ge dots grown by ultra- Kinetic roughening high-vacuum chemical vapor deposition, 240 Early stages of growth and nanostructure of Pb(Zr,Ti)O; thin Microstructure films observed by atomic force microscopy, 281 Crystal microstructure of PbTe/Si and PbTe/SiO,/Si thin films, LaNiO; 196 Fabrication and electrical properties of sol-gel derived (BaSr)- C-induced Ge dots: a versatile tool to fabricate ultra-small Ge TiO; thin films with metallic LaNiO; electrode, 172 nanostructures, 248 Migration enhanced epitaxy LaNiO, film TEM and AFM study of perovskite conductive LaNiO; films TEM studies of self-organization phenomena in CdSe frac- prepared by metalorganic decomposition, 386 tional monolayers in a ZnSe matrix, 76 Lead telluride Miller capacitance Crystal microstructure of PbTe/Si and PbTe/SiO,/Si thin films, Selectively grown vertical Si MOS transistor with reduced 196 overlap capacitances, 306 Limiting thickness Minority diffusion constant RHEED investigation of limiting thickness epitaxy during low- Assessment of transport parameters for the design of high speed temperature Si-MBE on (100) surface, 179 Si/SiGe HBTs with compositionally graded base, 137 LiNbO; Misfit dislocations Epitaxial growth of LiNbO; on a@Al,0;(0001), 163 Dislocation pattern formation in epitaxial structures based on Liquid phase epitaxy SiGe alloys, 112 Defect distribution and morphology development of SiGe STM study of step graded Si,_,Ge,/Si(001) buffers, 100 layers grown on Si(100) substrates by LPE, 116 Misorientation Low energy electron microscopy Self organization of Ge dots on Si substrates: influence of mis- Adsorption induced giant faceting of vicinal Si(001), 16 orientation, 256 Low energy ions Mobility Relation of initial thin film formation to defects induced by low Carrier mobilities in modulation doped Si,_,Ge, heterostruc- energy ions, 42 tures with respect to FET applications, 141 Low pressure chemical vapour deposition Model Selectively grown vertical Si MOS transistor with reduced The growth kinetics of Si;_,Ge, layers from SiH, and GeHg, overlap capacitances, 306 19] Low temperature epitaxial growth Modeling Low temperature epitaxial growth of Si on Si(111) by gas- Dislocation half loop formation in GaSb/(001)GaAs islands and source MBE with heat-pulse annealing, 232 steps role: a Monte Carlo simulation, 277 Low-energy electron microscopy Modulation doped quantum wells Low-energy electron microscopy of nanoscale three-dimen- Dynamical properties of trions and excitons in modulation sional SiGe islands on Si(100), 262 doped CdTe/CdMgZnTe quantum wells, 286 Luminescence Modulation-doped field effect transistors Spectroscopic study of nanocrystalline TiO2 thin films grown Optimization of the channel doping profile of vertical sub-100 by atomic layer deposition, 295 nm MOSFETs, 309 Magnesium Molecular beam epitaxy Diffusion of Cd, Mg and S in ZnSe-based quantum well struc- Coalescence of germanium islands on silicon, 109 tures, 208 Correlation between the sign of strain and the surface morphol- Magnetic films and multilayers ogy and defect structure of InAlAs grown on vicinal MgO surface microstructure and crystalline coherence of Co/Pt (111)BInP, 218 superlattices, 168 Lateral ordering of self-assembled Ge islands, 252 Materials Optical and electrical characterization of SiGe layers for ver- Composition and structure of Ge islands grown on Si(001) and tical sub-100 nm MOS transistors, 323 of SiGe grown on Si mesa, 73 Optimization of the channel doping profile of vertical sub-100 MBE nm MOSFETs, 309 RHEED investigation ofl imiting thickness epitaxy during low- Role of hydrogen during Si capping of strained Ge or Si,_,Ge, temperature Si-MBE on (100) surface, 179 hut clusters, 49 Mesa structures Strong surface segregation of Sb atoms at low temperatures Composition and structure of Ge islands grown on Si(001) and during Si molecular beam epitaxy, 236 of SiGe grown on Si mesa, 73 Surfactant-mediated epitaxy of Ge on Si: progress in growth Metal oxide semiconductor and electrical characterization, 29 The vertical heterojunction MOSFET, 299 TEM investigation of the dependence of structural defects on Metal-organic decomposition prelayer formation in GaAs-on-Si thin films, 96 Fabrication and electrical properties of sol-gel derived (BaSr)- TEM studies of self-organization phenomena in CdSe frac- TiO; thin films with metallic LaNiO; electrode, 172 tional monolayers in a ZnSe matrix, 76 TEM and AFM study of perovskite conductive LaNiO; films Molecular electronics prepared by metalorganic decomposition, 386 Growth of solution cast macromolecular 7-conjugated nanor- Metastable precursor clusters ibbons on mica, 13 Subject index Molecular nanowire Pattern geometry Growth of solution cast macromolecular 7-conjugated nanor- Formation of highly uniform InGaAs ridge quantum wires by ibbons on mica, 13 selective molecular beam epitaxy on novel InP patterned Morphology substrates, 22 Defect distribution and morphology development of SiGe Patterning layers grown on Si(100) substrates by LPE, 116 Structural characterization of SiGe step graded buffer layers TEM and AFM study of perovskite conductive LaNiO; films grown on prestructured Si{001] substrates by molecular prepared by metalorganic decomposition, 386 beam epitaxy, 92 MOS transistor Perovskites Selectively grown vertical Si MOS transistor with reduced Domain wall splitting and creation oft he fine domain structure, overlap capacitances, 306 149 Multiple quantum wells Photoconductivity Oscillatoric bias dependence of DC-electric field induced sec- Electrical properties of HgCdTe films obtained by laser deposi- ond harmonic generation from Si—SiO, multiple quantum tion, 188 wells, 350 Photocurrent The determination of e,4 in (111)B-grown (In,Ga)As/GaAs Optical and electrical characterization of SiGe layers for ver- strained layers, 354 tical sub-100 nm MOS transistors, 323 Multiple-angle ellipsometry Photodissociation Characterization of inhomogeneous films by multiple-angle Thin tantalum pentoxide films deposited by photo-induced ellipsometry, 362 CVD, 340 (N11) GaAs Photo-induced chemical vapour deposition Self-aggregation of InAs quantum dots on (N11) GaAs sub- Thin tantalum pentoxide films deposited by photo-induced strates, 9 CVD, 340 Nanocrystal Photoluminescence Two-dimensional and zero-dimensional structures of semimag- Influence of grown-in defects on the optical and electrical prop- netic semiconductors prepared by pulsed laser deposition, erties of Si/Si,_,Ge,/Si heterostructures, 227 176 Magnetoluminescence measurements of two-dimensional hole Structural properties of Ge nano-crystals embedded in SiO; gas, 366 films from X-ray diffraction and Raman spectroscopy, 58 Morphology and photoluminescence of Ge islands grown on Nanostructrure Si(001), 244 Spectroscopic study of nanocrystalline Ti02 thin films grown Optical and electrical characterization of SiGe layers for ver- by atomic layer deposition, 295 tical sub-100 nm MOS transistors, 323 Early stages of growth and nanostructure of Pb(Zr,Ti)O; thin Photoluminescence of self-assembled Ge dots grown by ultra- films observed by atomic force microscopy, 281 high-vacuum chemical vapor deposition, 240 Ni Photoluniinescence studies of As—P exchange in GaAs/GalInP, Allotaxy in the Ni—Si system, 222 quantum wells grown by chemical beam epitaxy, 358 NiO Study of InAs quantum dots in GaAs prepared on misoriented Growth and magnetism of Co/NiO(111) thin films, 160 substrates, 80 Non-invasive charge detector Photoluminescence excitation Simulation of a non-invasive charge detector for quantum cel- Magnetoluminescence measurements of two-dimensional hole lular automata, 145 gas, 366 Numerical simulation Photoreflectance The growth kinetics of Si;_,Ge, layers from SiH, and GeHy, Raman and photoreflectance studies of electronic band bending 19] at ZnSe/GaAs interfaces, 381 Optical reflectivity Piezoelectric thin films Optical on wafer measurement of Ge content of virtual SiGe- Early stages of growth and nanostructure of Pb(Zr,T1)O3; thin substrates, 347 films observed by atomic force microscopy, 281 Optoelectronic devices Plasma enhanced chemical vapor deposition TEM investigation of the dependence of structural defects on Epitaxial growth at high rates with LEPECVD, 89 prelayer formation in GaAs-on-Si thin films, 96 Point defects Ordered terraces Ion assisted MBE growth of SiGe nanostructures, 104 Low temperature epitaxial growth of Si on Si(111) by gas- New virtual substrate concept for vertical MOS transistors, 319 source MBE with heat-pulse annealing, 232 Polarized PL Oscillations Valence band splitting in Cd;,;_,,Zn,Te epilayers, 205 The influence of growth temperature on the period of RHEED Pseudomorphic SiGeC oscillations during MBE of Si and Ge on Si(111) surface, Hole mobilities in pseudomorphic Si,—,—,Ge,C, alloy layers, 183 336 Oxidation Pulse laser deposition Retarded diffusion of boron in Si due to the formation of an Electrical properties of HgCdTe films obtained by laser deposi- epitaxial CoSi, layer, 26 tion, 188 398 Pulse vacuum thermal deposition Epitaxial zirconia films on sapphire substrates, 156 Growth of III-V semiconductor layers on Si patterned sub- Sb strates, 63 Surfactant-mediated epitaxy of Ge on Si: progress in growth Pulsed laser deposition and electrical characterization, 29 Early stages of growth and nanostructure of Pb(Zr,Ti)O; thin Scanning electron microscopy films observed by atomic force microscopy, 281 Cluster-size distribution of SiGe alloys grown by MBE, 53 Epitaxial growth of LiNbO; on @Al,0,(0001), 163 Formation of highly uniform InGaAs ridge quantum wires by Pulsed laser deposition of SmBaCuO thin films, 153 selective molecular beam epitaxy on novel InP patterned Two-dimensional and zero-dimensional structures of semimag- substrates, 22 netic semiconductors prepared by pulsed laser deposition, RF-sputtering deposition of Al/Al,O; multilayers, 373 176 Scanning force microscopy Quantum cellular automata Growth of solution cast macromolecular 7-conjugated nanor- Simulation of a non-invasive charge detector for quantum cel- ibbons on mica, 13 lular automata, 145 Scanning tunneling microscopy Quantum devices Growth of Ge on H-terminated Si(111) surface, 34 Silicon quantum integrated circuits — an attempt to fabricate STM study of step graded Si,_,Ge,/Si(001) buffers, 100 silicon-based quantum devices using CMOS fabrication The influence of carbon on the surface morphology of Si(100) techniques, 130 and on subsequent Ge island formation, 69 Quantum dots Second harmonic generation C-induced Ge dots: a versatile tool to fabricate ultra-small Ge Oscillatoric bias dependence of DC-electric field induced sec- nanostructures, 248 ond harmonic generation from Si—SiO, multiple quantum Formation of zero-dimensional hole states in Ge/Si heterostruc- wells, 350 tures probed with capacitance spectroscopy, 332 Structural studies of epitaxial PbTiO; films by optical second Shape, size, strain and correlations in quantum dot systems harmonic generation, 291 studied by grazing incidence X-ray scattering methods, 2 Segregation Study of InAs quantum dots in GaAs prepared on misoriented Surfactant-mediated epitaxy of Ge on Si: progress in growth substrates, 80 and electrical characterization, 29 Quantum wells Selective epitaxial growth Optical pumping in strained In,Ga,_,As/GaAs quantum wells, Selectively grown vertical Si MOS transistor with reduced 370 overlap capacitances, 306 Raman spectroscopy Selective molecule beam epitaxy Raman and photoreflectance studies of electronic band bending Formation of highly uniform InGaAs ridge quantum wires by at ZnSe/GaAs interfaces, 381 selective molecular beam epitaxy on novel InP patterned Structural properties of Ge nano-crystals embedded in SiO, substrates, 22 films from X-ray diffraction and Raman spectroscopy, 58 Self organization Study of InAs quantum dots in GaAs prepared on misoriented Self organization of Ge dots on Si substrates: influence of mis- substrates, 80 orientation, 256 Reflection high-energy electron diffraction Self-aggregation Role of hydrogen during Si capping of strained Ge or Si,_,Ge, Self-aggregation of InAs quantum dots on (N11) GaAs sub- hut clusters, 49 strates, 9 Refractive index Self-assembled growth Characterization of inhomogeneous films by multiple-angle Shape, size, strain and correlations in quantum dot systems ellipsometry, 362 studied by grazing incidence X-ray scattering methods, 2 Relaxed buffer Self-assembled quantum dots Epitaxial growth at high rates with LEPECVD, 89 Photoluminescence of self-assembled Ge dots grown by ultra- Relaxed layers high-vacuum chemical vapor deposition, 240 Defect distribution and morphology development of SiGe TEM study of InAs self-assembled quantum dots in GaAs, 38 layers grown on Si(100) substrates by LPE, 116 Self-assembly Relaxed SiGe buffer layers Growth of solution cast macromolecular 7-conjugated nanor- Ion assisted MBE growth of SiGe nanostructures, 104 ibbons on mica, 13 RF-sputtering Self-ordering RF-sputtering deposition of Al/Al,O; multilayers, 373 Lateral ordering of self-assembled Ge islands, 252 Structural properties of Ge nano-crystals embedded in SiO, Self-organizing growth films from X-ray diffraction and Raman spectroscopy, 58 Morphology and photoluminescence of Ge islands grown on RHEED Si(001), 244 RHEED investigation ofl imiting thickness epitaxy during low- Semiconductor nanostructures temperature Si-MBE on (100) surface, 179 Shape, size, strain and correlations in quantum dot systems The influence of growth temperature on the period of RHEED studied by grazing incidence X-ray scattering methods, 2 oscillations during MBE of Si and Ge on Si(111) surface, Semimagnetic semiconductor 183 Two-dimensional and zero-dimensional structures of semimag- Sapphire substrates netic semiconductors prepared by pulsed laser deposition, 176 Subject index of SiGe grown on Si mesa, 73 Allotaxy in the Ni—Si system, 222 Formation of zero-dimensional hole states in Ge/Si heterostruc- Influence of grown-in defects on the optical and electrical prop- tures probed with capacitance spectroscopy, 332 erties of Si/Si,_ ,Ge,/Si heterostructures, 227 Retarded diffusion of boron in Si due to the formation of an Morphology and photoluminescence of Ge islands grown on epitaxial CoSi, layer, 26 Si(001), 244 RHEED investigation of limiting thickness epitaxy during low- The influence of growth temperature on the period of RHEED temperature Si-MBE on (100) surface, 179 oscillations during MBE of Si and Ge on Si(111) surface, Role of hydrogen during Si capping of strained Ge or Si,_,Ge, 183 hut clusters, 49 Si(001) The influence of carbon on the surface morphology of Si(100) Adsorption induced giant faceting of vicinal Si(001), 16 and on subsequent Ge island formation, 69 Si(100) Silicon compounds Low-energy electron microscopy of nanoscale three-dimen- Hole mobilities in pseudomorphic Si;_,-,Ge,C, alloy layers, sional SiGe islands on Si(100), 262 336 Orientation of aluminum nuclei on Si(100) and Si(111), 84 Si-MBE Si(1 11) Optical on wafer measurement of Ge content of virtual SiGe- Annealing of CaF, adlayers grown on Si(111): investigations of substrates, 347 the morphology by atomic force microscopy, 120 Si-MOSFETs Growth of Ge on H-terminated Si(111) surface, 34 Comparison of lateral and vertical Si-MOSFETs with ultra Orientation of aluminum nuclei on Si(100) and Si(111), 84 short channels, 313 Surfactant-mediated epitaxy of Ge on Si: progress in growth Single crystal epitaxy and electrical characterization, 29 Growth and magnetism of Co/NiO(111) thin films, 160 Si/SiGe heterojunction bipolar transistor Single quantum well Assessment of transport parameters for the design of high speed X-ray diffraction analysis of strain relaxation in free standing Si/SiGe HBTs with compositionally graded base, 137 and buried GaAs/GalInAs/GaAs SQW lateral structures, , SiGe 271 Cluster-size distribution of SiGe alloys grown by MBE, 53 Si patterned substrates Defect distribution and morphology development of SiGe Growth of III-V semiconductor layers on Si patterned sub- layers grown on Si(100) substrates by LPE, 116 strates, 63 Epitaxial growth at high rates with LEPECVD, 89 Si substrates Optical on wafer measurement of Ge content of virtual SiGe- Self organization of Ge dots on Si substrates: influence of mis- substrates, 347 orientation, 256 Silicon quantum integrated circuits — an attempt to fabricate SmBaCuO silicon-based quantum devices using CMOS fabrication Pulsed laser deposition of SmBaCuO thin films, 153 techniques, 130 Sol-gel processing Surfactant-mediated epitaxy of Ge on Si: progress in growth Fabrication and electrical properties of sol-gel derived (BaSr)- and electrical characterization, 29 TiO; thin films with metallic LaNiO; electrode, 172 SiGe alloys Solid phase reaction Dislocation pattern formation in epitaxial structures based on The growth of an intermediate CoSi phase during the formation SiGe alloys, 112 of epitaxial CoSi, by solid phase reaction, 201 SiGe step-graded buffer Solid solutions Structural characterization of SiGe step graded buffer layers Domain wall splitting and creation oft he fine domain structure, grown on prestructured Si[001] substrates by molecular 149 beam epitaxy, 92 Step bunching SiGe/Si Heterostructures Adsorption induced giant faceting of vicinal Si(001), 16 Optical and electrical characterization of SiGe layers for ver- Lateral ordering of self-assembled Ge islands, 252 tical sub-100 nm MOS transistors, 323 Steps SiGeC Dislocation half loop formation in GaSb/(001)GaAs islands and C-induced Ge dots: a versatile tool to fabricate ultra-small Ge steps role: a Monte Carlo simulation, 277 nanostructures, 248 Straight step edges SiH, Low temperature epitaxial growth of Si on Si(111) by gas- The growth kinetics of Si;_,Ge, layers from SiHs and GeHg, source MBE with heat-pulse annealing, 232 19] Strain induced effects Silicide Optical pumping in strained In,Ga,_,As/GaAs quantum wells, Retarded diffusion of boron in Si due to the formation of an 370 epitaxial CoSi, layer, 26 Strains Silicon Epitaxial growth of LiNbO; on @Al,0;(0001), 163 Carrier mobilities in modulation doped Si,_,Ge, heterostruc- Structural properties tures with respect to FET applications, 141 Spectroscopic study of nanocrystalline TiO2 thin films grown Composition and structure of Ge islands grown on Si(001) and by atomic layer deposition, 295 400 TEM investigation of the dependence of structural defects on by atomic layer deposition, 295 prelayer formation in GaAs-on-Si thin films, 96 Transmission electron microscopy Sulfur Epitaxial growth of LiNbO; on aAl,0;(0001), 163 Diffusion of Cd, Mg and S in ZnSe-based quantum well struc- Structural characterization of SiGe step graded buffer layers tures, 208 grown on prestructured Si{001] substrates by molecular Superlattice beam epitaxy, 92 Optical studies of carrier transport phenomena in CdSe/ZnSe TEM and AFM study of perovskite conductive LaNiO; films fractional monolayer superlattices, 377 prepared by metalorganic decomposition, 386 Supramolecular architecture TEM investigation of the dependence of structural defects on Growth of solution cast macromolecular aw-conjugated nanor- prelayer formation in GaAs-on-Si thin films, 96 ibbons on mica, 13 TEM studies of self-organization phenomena in CdSe frac- Surface diffusion tional monolayers in a ZnSe matrix, 76 Role of hydrogen during Si capping of strained Ge or Si,_,Ge, TEM study of InAs self-assembled quantum dots in GaAs, 38 hut clusters, 49 The growth of an intermediate CoSi phase during the formation Surface morphology of epitaxial CoSi, by solid phase reaction, 201 Coalescence of germanium islands on silicon, 109 The influence of stress on growth instabilities on Si substrates, The influence of carbon on the surface morphology of Si(100) 124 and on subsequent Ge island formation, 69 Allotaxy in the Ni—Si system, 222 Surface segregation Transparent films Strong surface segregation of Sb atoms at low temperatures Characterization of inhomogeneous films by multiple-angle during Si molecular beam epitaxy, 236 ellipsometry, 362 Surfactant, Hall mobility, Capacitance—voltage Transport properties Surfactant-mediated epitaxy of Ge on Si: progress in growth Hole mobilities in pseudomorphic Si,-,—,Ge,C, alloy layers, and electrical characterization, 29 336 Ta,O; Optical studies of carrier transport phenomena in CdSe/ZnSe Thin tantalum pentoxide films deposited by photo-induced fractional monolayer superlattices, 377 CVD, 340 Trions Tapping-mode atomic force microscopy Dynamical properties of trions and excitons in modulation Low temperature epitaxial growth of Si on Si(111) by gas- doped CdTe/CdMgZnTe quantum wells, 286 source MBE with heat-pulse annealing, 232 Tunnelling Temperature behaviour of Esaki current Tunnelling currents in very narrow p —n’ junctions, 344 Tunnelling currents in very narrow p —n’ junctions, 344 Ultra high vacuum scanning tunneling microscope Thermally-detected optical absorption Relation ofi nitial thin film formation to defects induced by low The determination of e,4, in (111)B-grown (In,Ga)As/GaAs energy ions, 42 strained layers, 354 Ultra short channels Thin film Comparison of lateral and vertical Si-MOSFETs with ultra Thin tantalum pentoxide films deposited by photo-induced short channels, 313 CVD, 340 Undulations Two-dimensional and zero-dimensional structures of semimag- Defect distribution and morphology development of SiGe netic semiconductors prepared by pulsed laser deposition, layers grown on Si(100) substrates by LPE, 116 176 Uniformity Crystal microstructure of PbTe/Si and PbTe/SiO,/Si thin films, Formation of highly uniform InGaAs ridge quantum wires by 196 selective molecular beam epitaxy on novel InP patterned Pulsed laser deposition of SmBaCuO thin films, 153 substrates, 22 Relation of initial thin film formation to defects induced by low Valence band splitting energy ions, 42 Valence band splitting in Cd,;_,Zn,Te epilayers, 205 Thin film growth Variation of temperature Epitaxial growth of LINbO; on a@Al,O;(0001), 163 Coalescence of germanium islands on silicon, 109 Thin relaxed SiGe buffer layer Vertical alignment New virtual substrate concept for vertical MOS transistors, 319 C-induced Ge dots: a versatile tool to fabricate ultra-small Ge Threading dislocations nanostructures, 248 Ion assisted MBE growth of SiGe nanostructures, 104 Very low temperature growth New virtual substrate concept for vertical MOS transistors, 319 New virtual substrate concept for vertical MOS transistors, 319 Three-dimensional SiGe islands Vicinal surface Low-energy electron microscopy of nanoscale three-dimen- Lateral ordering of self-assembled Ge islands, 252 sional SiGe islands on Si(100), 262 Virtual substrate Time-resolved photoluminescence Ion assisted MBE growth of SiGe nanostructures, 104 Dynamical properties of trions and excitons in modulation New virtual substrate concept for vertical MOS transistors, 319 doped CdTe/CdMgZnTe quantum wells, 286 Optical on wafer measurement of Ge content of virtual SiGe- Titanium oxide substrates, 347 Spectroscopic study of nanocrystalline TiO2 thin films grown X-ray