Thin Solid Films 1998: Vol 333 Index

7 Pages·1998·2.3 MB·English

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Thin Solid Films 333 (1998) 295-296
Author Index of Volume 333
Alterkop, B., 150
Gould, R.D., 170 Ma, Y.-G., 224 Sanchez-Juarez, A., 196
cya, ™., Z5 Mackowski, J.M., 126 Scavarda do Carmo, L.C.,
Barreca, D., 35 Gupta, S.K., 176 Maguire, P.D., 114 157
Benqlilou-Moudden, H., 16 Gutmann, R.J., 219 Major, S., 9 Schdllhorn, B., 235
Berger, S., 264 Maleysson, C., 235 Scholz, R., 245
Blanc, J.P., 235 Hamilton, G., 77 Maruyama, T., 203 Schram, D.C., 29
Blondiaux, G., 16 Haupt, J., 278 Mathiasen, C., 50 Schuhmann, J., 95
Bottiger, J., 50 Higashi, M., 256 Mauricio, M.H.P., 157 Sharan, M.K., 287
Boxman, R.L., 150 Hon, M.-H., 108 McLaughlin, J.A., 114 Sharma, D., 176
Hormes, J., 41 Merkel, K.-H., 71 Sharon, M., 287
Cao, X., 41 Horowitz, G., 272 Meyer, S., 272 meen, J.<., 224
Caride, A.O., 157 Horsewell, A., 50 Mogensen, K.S., 50 Sheng, M., 71
Chang, I-S., 108 Hu, Y.Z., 219 Moon, W., 137 Shimazaki, Y. 5
Che, C.-M., 224 Mori, M., 60 Shin, J.-S., 142
Chen, X., 71 Inaki, Y., 5 Morley, S.M., 114 Shinyashiki, Y., 203
Cheung, T.-C., 224 Iriyama, K., | Murata, K., 256 Smith, G.B., 185
Chicault, R., 228 ito, 3., 5, 256 Musa, G., 95 Srinivasa, R.S., 9
Chow, T.P., 219 Ivanov, Z.G., 207 Mustata, I., 95 Stepantsov, E.A., 207
Claeson, T., 207 Muthe, K.P., 9 Straupe, C., 272
Coronell, D.G., 77 Jahan, F., 185 Stubhan, F., 71
Cremona, M., 157 Jain, A., 77 Nainaparampil, J.J., 88 mt £.., 22
Cyrille, M.C., 228 Jin, X., 13 Nakashima, K., 1
Niederwald, H.S., 191 Tae Ahn, B., 137
de Avillez, R.R., 157 Kaplan, R., 240 Nishi, Y., 60 Tae Baek, J., 137
de Graaf, A., 29 Kataby, G., 41 Nizawa, Y., 60 Takahashi, K., 256
Dekempeneer, E.H.A., 29 Kennedy, M., 191 Nunes, R.A., 157 Tamai, N., |
Dhar, S., 20 Kiselev, N.A., 207 Tambo, T., 60
Dinescu, G., 29 Koltypin, Y., 41 Olsson, E., 207 Tatsuyama, C., 60
Dixit, M., 165 Komura, T., 256 Ortiz, A., 196 Tei, K., 103
Dwivedi, S.K., 165 Korenyi-Both, A., 88 Ozaki, Y., | Thomsen, N.B., 50
Kumar, A., 165 Tiburcio-Silver, A., 196
Egan, E.W., 77 Kumar, M., 287 Parkansky, N., 150 Tondello, E., 35
Ehrich, H., 95 Pauly, A., 235 Tsien, P.-H., 13
Elkashef, N., 9 Lamberton, R.W., 114 Pinard, L., 126 Tsuda, Y., 256
Eskildsen, S.S., 50 Lang, P., 272 Plon, J., 251
Lee, W.-J., 142 Popescu, A., 95 Ullrich, B., 134
Fehlberg, L.V., 157 Lenardi, C., 278
Felner, I., 41 Levasseur, A., 16 Rickards, J., 196 van de Sanden, M.C.M.,
Libardi, H., 82 Ristau, D., 191 29
Gadenne, M., 251 Lichinchi, M., 278 Rizzi, G.A., 35 van Ijzendoorn, L.J., 29
Gadenne, P., 251 Lam, 4... 24> Roddatis, V.V., 207 Vasiliev, A.L., 207
Garcia, I., 65 Lin, H., 71 Rosenbaum, R., 150 Vazquez, A.J., 65
Garnier, F., 272 Lo, T.-C., 13 Rothe, J., 41 Venkatraman, R., 77
Gedanken, A., 41 Longueville, J.L., 29 Roy, M.S., 176 Verma, A.L., |
Germain, J.P., 235 Lopez, M.G., 170 Villegier, J.C., 228
Goldsmith, S., 150 Lotz, B., 272 Sabharwal, S.C., 9 Vinatier, P., 16
Gosele, U., 245 ca. 2 ao Sakata, J., 213 Vitali, R., 278
0040-6090/98/$ - see front matter © 1998 Elsevier Science S.A. All rights reserved.
PII S0040-6090(98)01473-4
296 Author index
Wang, X., 71 Woong Jang, T., 137 Yamamoto, M., 5 Zhang, M., 245
Wei, ¥4 20 Yang, G.-R., 219 Zhang, Z.-J., |
Weitzman, B., 77 Yoneyama, M., | Zhao, Y.-P., 219
Zironi, E.P., 196
Weng, H., 245
Wilde, J., 71 Zabinski, J.S., 88
Wittmann, J.C., 272 Yamaguchi, T., 256 Zhang, J., 13
Thin Solid Films 333 (1998) 297-301
Subject Index of Volume 333
Alkali halides Carrier lifetime
Grazing incidence X-ray diffraction analysis of alkali fluor- Frequency-resolved photoconductivity in a-SiGe:H, 240
ide thin films for optical devices, 157 Cathodes
Aluminum Amorphous lithium cobalt and nickel oxides thin films: pre-
Effect of temperature and substrate on the growth behaviors paration and characterization by RBS and PIGE, 16
of chemical vapor deposited Al films with dimethylethy-
CeO,
lamine alane source, 137 Microstructure of yttrium stabilized ZrO, crystals with
Aluminium nitride CeO, and SrTiO; intermediate layers, 207
Optical properties of AIN thin films correlated with sputter- Chalcogenides
ing conditions, 25] Non-catalytic displacement plating (NCDP) of photosensi-
Amorphous hydrogenated carbon tive semiconducting thin films, 287
Structure changes in a-C:H films in inductive CH,/Ar Chemical mechanical polishing
plasma deposition, 103 XPS and AFM study of chemical mechanical polishing of
Amorphous materials silicon nitride, 219
Amorphous lithium cobalt and nickel oxides thin films: pre- Chemical vapor deposition
paration and characterization by RBS and PIGE, 16 Characterization of SiGe base layer in Si/SiGe heterojunc-
Amorphous hydrogenated carbon nitride films deposited via tion bipolar transistor layer structure, 13
an expanding thermal plasma at high growth rates, 29 A chemical vapour deposition route to MoO;—Bi1,O; thin
The adsorption of monolayer coatings on iron nanoparti- films, 35
cles: Mossbauer spectroscopy and XANES results, 41 Oxy-acetylene flame chemical vapour deposition of dia-
The effect of post-deposition transverse current injection on mond film. Part II: the influence of deposition para-
amorphous indium oxide film conductivity, 150 meters on diamond composition, 65
Amorphous SiGe:H Moisture-resistant properties of SiN, films prepared by
Frequency-resolved photoconductivity in a-SiGe:H, 240 PECVD, 71
Angular selective windows Effect of temperature and substrate on the growth behaviors
Investigation of angular selective optical properties of silver/ of chemical vapor deposited Al films with dimethylethy-
titanium oxide cermet thin films, 185 lamine alane source, 137
Anisotropy Growth characteristics and electrical resistivity of chemical
Investigation of angular selective optical properties of silver, vapor-deposited tungsten film, 108
titanium oxide cermet thin films, 185 Iron-iron oxide composite thin films prepared by chemical
Uniaxially oriented polyamide films in-plane prepared by vapor deposition from iron pentacarbonyl, 203
vacuum deposition polymerization methods assisted by Coatings
oblique ion irradiation, 213 Moisture-resistant properties of SiN, films prepared by
Berkovich nanoindentation proceess PECVD, 82
Simulation of Berkovich nanoindentation experiments on Formation and characterization of multiphase film prop-
thin films using finite element method, 278 erties of (Ti-Cr)N formed by cathodic arc deposition,
Bismuth molybdates 88
A chemical vapour deposition route to MoO;—Bi,O; thin Coercivity
films, 35 Iron—iron oxide composite thin films prepared by chemical
Bismuth oxide vapor deposition from iron pentacarbonyl, 203
A chemical vapour deposition route to MoO;—B1,O; thin Composite film
films, 35 Iron-iron oxide composite thin films prepared by chemical
Bistable luminescence vapor deposition from iron pentacarbonyl, 203
Influence of thermal and electronic modifications of the Computer simulation
GaAs bandgap on bistable luminescent light emitted Monte Carlo simulations of sputter deposition and step
from a thin CdS film, 134 coverage of thin films, 77
Cadmium sulphide Condensation
Influence of thermal and electronic modifications of the New sol-gel oxygen sensor based on luminescence cyclome-
GaAs bandgap on bistable luminescent light emitted tallated platinum complexes, 224
from a thin CdS film, 134 Conductivity
0040-6090/98/$ - see front matter © 1998 Elsevier Science S.A. All rights reserved.
PII S0040-6090(98)01474-6
Subject index
The effect of post-deposition transverse current injection on PECVD PLZT ((Pb,La)(Zr.Ti)O;) thin films on Pt/SiO;,
amorphous indium oxide film conductivity, 150 Si substrates and on Pt/Ti/SiO>/Si substrates, 142
Effect of photocrystallization on the photoconductivity ofa - Finite element method
Simulation of Berkovich nanoindentation experiments on
Sego Fe, 165
AC electrical properties of vacuum deposited Au-SiO,—-Au thin films using finite element method, 278
sandwich structures after electroforming, 170 Fluorescence
Influence of periphal electron-withdrawing substituents on Excitation energy transfer in Langmuir—Blodgett films of 5-
the conductivity of zinc phthalocyanine in the presence (4-N-octadecylpyridyl)-10,15,20-tri-p-tolylporphyrin on
of gases. Part 2: oxidizing gases, 228 gold-evaporated glass substrates studied by _ time-
Copper resolved fluorescence spectroscopy, |
Adhesive metal films obtained by thermionic vacuum arc Fluorides
(TVA) deposition, 95 Ion beam-assisted deposition of MgF, and YbF; films, 191
Crystalization Ge islands
Effect of photocrystallization on the photoconductivity ofa - Growth temperature effect on the heteroepitaxy of InSb
Sego Tex, 165 films on a Si(001) substrate covered with Ge islands, 60
Deposition process Gold
Sputter deposition of gallium nitride films using a GaAs Excitation energy transfer in Langmuir—Blodgett films of 5-
target, 9 (4-N-octadecylpyridyl)-10,15,20-tri-p-tolylporphyrin on
Optical losses of multilayer stacks synthesized with silicon gold-evaporated glass substrates studied by _ time-
oxynitride by r.f. magnetron sputtering, 126 resolved fluorescence spectroscopy, |
Uniaxially oriented polyamide films in-plane prepared by Guided-mode resonance absorption
vacuum deposition polymerization methods assisted by The adsorption of monolayer coatings on iron nanoparti-
oblique ion irradiation, 213 cles: Méssbauer spectroscopy and XANES results, 82
Significance of substrate temperature on the properties of Heat treatment
flash evaporated Culng7;Gay.2;Se, thin films, 235 Stresses in Al/TiW/S1(100) contacts during thermal cycling,
Diamond 264
Oxy-acetylene flame chemical vapour deposition of dia- Heteroepitaxy
mond film. Part II: the influence of deposition para- Growth temperature effect on the heteroepitaxy of InSb
meters on diamond composition, 65 films on a Si(001) substrate covered with Ge islands, 60
Diamond-like carbon Heterostructures
Monitoring laser-induced microstructural changes of thin Characterization of SiGe base layer in Si/SiGe heterojunc-
film hydrogenated amorphous carbon (a-C:H) using tion bipolar transistor layer structure, 13
Raman spectroscopy, 114 Hydrogen
Dielectric properties Growth characteristics and electrical resistivity of chemical
AC electrical properties of vacuum deposited Au—SiO,—Au vapor-deposited tungsten film, 108
sandwich structures after electroforming, 170 Hydrogenated amorphous carbon (a-C:H)
Elastic properties Monitoring laser-induced microstructural changes of thin
Stresses in Al/TiW/S1(100) contacts during thermal cycling, film hydrogenated amorphous carbon (a-C:H) using
264 Raman spectroscopy, 114
Electrical properties and measurements Indium oxide
The effect of post-deposition transverse current injection on The effect of post-deposition transverse current injection on
amorphous indium oxide film conductivity, 150 amorphous indium oxide film conductivity, 150
AC electrical properties of vacuum deposited Au-SiO,-Au InSb
sandwich structures after electroforming, 170 Growth temperature effect on the heteroepitaxy of InSb
Electrical properties films on a Si(001) substrate covered with Ge islands, 60
Electrical, optical and photovoltaic effect in pyronine G (Y) Interface
based thin film sandwich devices, 176 A comparative study on the nucleation and growth of ECR-
Electroless PECVD PLZT ((Pb,La)(Zr,Ti)O;) thin films on Pt/SiO,/
Non-catalytic displacement plating (NCDP) of photosensi- Si substrates and on Pt/Ti/SiO,/Si substrates, 142
tive semiconducting thin films, 287 Intermediate layers
Ellipsometry Microstructure of yttrium stabilized ZrO, crystals with
Optical properties of AIN thin films correlated with sputter- CeO, and SrTiO; intermediate layers, 207
ing conditions, 251 Ion bombardment
Evaporation Atomic transport in Cu/Ge and Co/Ge systems during ion-
Significance of substrate temperature on the properties of beam mixing, 20
flash evaporated Culnp 7;Gap 25Se> thin films, 235 Structure changes in a-C:H films in inductive CHy,/Ar
Exciton plasma deposition, 103
Electrical, optical and photovoltaic effect in pyronine G (Y) Ion beam-assisted deposition of MgF, and YbF; films, 191
based thin film sandwich devices, 176 Iron
Film Iron-iron oxide composite thin films prepared by chemical
A comparative study on the nucleation and growth of ECR- vapor deposition from iron pentacarbonyl, 203
Subject index
Iron oxide Nucleosides
Iron-iron oxide composite thin films prepared by chemical Preparation of the nucleoside-containing nanolayered film
vapor deposition from iron pentacarbonyl, 203 by the layer-by-layer deposition technique, 5
Iron pentacarbonyl Optical coatings
Iron—iron oxide composite thin films prepared by chemical Optical losses of multilayer stacks synthesized with silicon
vapor deposition from iron pentacarbonyl, 203 oxynitride by r.f. magnetron sputtering, 126
Langmuir—Blodgett films Investigation of angular selective optical properties of silver
Excitation energy transfer in Langmuir—Blodgett films of 5- titanium oxide cermet thin films, 185
(4-N-octadecylpyridyl)-10,15,20-tri-p-tolylporphyrin on Ion beam-assisted deposition of MgF, and YbF; films, 191
gold-evaporated glass substrates studied by time- Optical device
resolved fluorescence spectroscopy, | Grazing incidence X-ray diffraction analysis of alkali fluor-
Laser irradiation ide thin films for optical devices, 157
Monitoring laser-induced microstructural changes of thin Optical properties
film hydrogenated amorphous carbon (a-C:H) using Optical losses of multilayer stacks synthesized with silicon
Raman spectroscopy, 114 oxynitride by r.f. magnetron sputtering, 126
Luminescence Influence of thermal and electronic modifications of the
Influence of thermal and electronic modifications of the GaAs bandgap on bistable luminescent light emitted
GaAs bandgap on bistable luminescent light emitted from a thin CdS film, 134
from a thin CdS film, 134 Investigation of angular selective optical properties ofs ilver,
New sol-gel oxygen sensor based on luminescence cyclome- titanium oxide cermet thin films, 185
tallated platinum complexes, 224 Ion beam-assisted deposition of MgF, and YbF; films, 191
Mossbauer spectroscopy Electrical and optical properties of fluorine-doped ZnO thin
The adsorption of monolayer coatings on iron nanoparti- films prepared by spray pyrolysis, 196
cles: Mossbauer spectroscopy and XANES results, 41 Optical properties of AIN thin films correlated with sputter-
Merocyanine ing conditions, 251
Photocurrent increment in organic solar cell with mixed Optical spectroscopy
solid of merocyanine and zinc porphyrin, 256 Optical properties of AIN thin films correlated with sputter-
Metallization ing conditions, 251
Adhesive metal films obtained by thermionic vacuum arc Organic mixed film
(TVA) deposition, 95 Photocurrent increment in organic solar cell with mixed
Effect of temperature and substrate on the growth behaviors solid of merocyanine and zinc porphyrin, 256
of chemical vapor deposited Al films with dimethylethy- Organic solar cell
lamine alane source, 137 Photocurrent increment in organic solar cell with mixed
Stresses in Al/TiW/Si(100) contacts during thermal cycling, solid of merocyanine and zinc porphyrin, 256
264 Organic substances
Molybdemum oxide Uniaxially oriented polyamide films in-plane prepared by
A chemical vapour deposition route to MoO;—Bi,O; thin vacuum deposition polymerization methods assisted by
films, 35 oblique ion irradiation, 213
Morphology Organometallic vapor deposition
Sexithiophene thin films epitaxially oriented on polytetra- Effect of temperature and substrate on the growth behaviors
flouroethylene substrates: structure and morphology, 272 of chemical vapor deposited Al films with dimethylethy-
Multilayers lamine alane source, 137
Preparation of the nucleoside-containing nanolayered film Influence of periphal electron-withdrawing substituents on
by the layer-by-layer deposition technique, 5 the conductivity of zinc phthalocyanine in the presence
Optical losses of multilayer stacks synthesized with silicon of gases. Part 2: oxidizing gases, 228
oxynitride by r.f. magnetron sputtering, 126 (Pb,La)(Zr,Ti)O; (PLZT)
Nanostructures A comparative study on the nucleation and growth of ECR-
The adsorption of monolayer coatings on iron nanoparti- PECVD PLZT ((Pb,La)(Zr,Ti)O3;) thin films on Pt/SiO;/
cles: Mossbauer spectroscopy and XANES results, 41 Si substrates and on Pt/Ti/SiO>/Si substrates, 142
Nitrides Photoconductivity
Sputter deposition of gallium nitride films using a GaAs Effect of photocrystallization on the photoconductivity of a-
target, 9 Sego Fer, 165
Amorphous hydrogenated carbon nitride films deposited via Frequency-resolved photoconductivity in a-SiGe:H, 240
an expanding thermal plasma at high growth rates, 29 Photovoltaic effect
Nuclear reaction Electrical, optical and photovoltaic effect in pyronine G (Y)
Electrical and optical properties off luorine-doped ZnO thin based thin film sandwich devices, 176
films prepared by spray pyrolysis, 196 Photocurrent increment in organic solar cell with mixed
Nucleation solid of merocyanine and zinc porphyrin, 256
A comparative study on the nucleation and growth of ECR- Physical vapor deposition
PECVD PLZT ((Pb,La)(Zr.Ti)O3) thin films on Pt/SiO, Monte Carlo simulations of sputter deposition and step
Si substrates and on Pt/Ti/Si0>,/Si substrates, 142 coverage of thin films, 77
300
Adhesive metal films obtained by thermionic vacuum arc Atomic transport in Cu/Ge and Co/Ge systems during ion-
(TVA) deposition, 95 beam mixing, 20
Plasma diagnostics Defect distribution and evolution in He’ implanted Si stu-
Structure changes in a-C:H films in inductive CHy,/Ar died by variable-energy positron beam, 245
plasma deposition, 103 Saturation magnetization
Plasma enhanced chemical vapor deposition Iron—iron oxide composite thin films prepared by chemical
Residual stress determination in PECVD TiN coatings by vapor deposition from iron pentacarbonyl, 203
X-ray diffraction: a parametric study, 50 Self-assembly films
A comparative study on the nucleation and growth of ECR- Preparation of the nucleoside-containing nanolayered film
PECVD PLZT ((Pb,La)(Zr,Ti)O;) thin films on Pt/SiO,/ by the layer-by-layer deposition technique, 5
Si substrates and on Pt/Ti/SiO,/Si substrates, 142 Self-assembly monolayers
Plasma processing and deposition The growth of TiO, thin films on mixed self-assembly mono-
Amorphous hydrogenated carbon nitride films deposited via layers from solution, 25
an expanding thermal plasma at high growth rates, 29 Semiconductors
Moisture-resistant properties of SiN, films prepared by Sputter deposition of gallium nitride films using a GaAs
PECVD, 71 target, 9
Adhesive metal films obtained by thermionic vacuum arc Characterization of SiGe base layer in Si/SiGe heterojunc-
(TVA) deposition, 95 tion bipolar transistor layer structure, 13
Platinum Effect of photocrystallization on the photoconductivity ofa -
New sol-gel oxygen sensor based on luminescence cyclome- Seg Fer, 165
tallated platinum complexes, 224 Influence of periphal electron-withdrawing substituents on
Polymers the conductivity of zinc phthalocyanine in the presence
Uniaxially oriented polyamide films in-plane prepared by of gases. Part 2: oxidizing gases, 228
vacuum deposition polymerization methods assisted by Non-catalytic displacement plating (NCDP) of photosensi-
oblique ion irradiation, 213 tive semiconducting thin films, 287
Polytetraflouroethylene Sensors
Sexithiophene thin films epitaxially oriented on polytetra- New sol-gel oxygen sensor based on luminescence cyclome-
flouroethylene substrates: structure and morphology, tallated platinum complexes, 224
272 Influence of periphal electron-withdrawing substituents on
Positron spectroscopy the conductivity of zinc phthalocyanine in the presence
Defect distribution and evolution in He’ implanted Si stu- of gases. Part 2: oxidizing gases, 228
died by variable-energy positron beam, 245 Sexithiophene thin films
Process parameters Sexithiophene thin films epitaxially oriented on polytetra-
Residual stress determination in PECVD TIN coatings by flouroethylene substrates: structure and morphology,
X-ray diffraction: a parametric study, 50 siz
Pyronine Si(001)
Electrical, optical and photovoltaic effect in pyronine G (Y) Growth temperature effect on the heteroepitaxy of InSb
based thin film sandwich devices, 176 films on a Si(001) substrate covered with Ge islands,
Radiaton damage 60
Atomic transport in Cu/Ge and Co/Ge systems during ion- Silicon nitride
beam mixing, 20 Moisture-resistant properties of SiN, films prepared by
Raman scattering PECVD, 71
Oxy-acetylene flame chemical vapour deposition of dia- XPS and AFM study of chemical mechanical polishing of
mond film. Part II: the influence of deposition para- silicon nitride, 219
meters on diamond composition, 65 Silicon oxide
Monitoring laser-induced microstructural changes of thin AC electrical properties of vacuum deposited Au-SiO,-Au
film hydrogenated amorphous carbon (a-C:H) using sandwich structures after electroforming, 170
Raman spectroscopy, 114 Silver-silver oxide films
Recombination The adsorption of monolayer coatings on iron nanoparti-
Frequency-resolved photoconductivity in a-SiGe:H, 240 cles: Méssbauer spectroscopy and XANES results, 82
Reflection high-energy electron diffraction Solar cells
Growth temperature effect on the heteroepitaxy of InSb Significance of substrate temperature on the properties of
films on a Si(001) substrate covered with Ge islands, 60 flash evaporated Culng 75;Gap.2sSe> thin films, 235
Residual stress Solar control glazing
Residual stress determination in PECVD TiN coatings by Investigation of angular selective optical properties of silver/
X-ray diffraction: a parametric study, 50 titanium oxide cermet thin films, 185
Grazing incidence X-ray diffraction analysis of alkali fluor- Sputtering
ide thin films for optical devices, 157 Sputter deposition of gallium nitride films using a GaAs
Rutherford backscattering spectroscopy target, 9
Amorphous lithium cobalt and nickel oxides thin films: pre- Amorphous lithium cobalt and nickel oxides thin films: pre-
paration and characterization by RBS and PIGE, 16 paration and characterization by RBS and PIGE, 16
Subject index 301
Monte Carlo simulations of sputter deposition and step Characterization of SiGe base layer in Si/SiGe heterojunc-
coverage of thin films, 77 tion bipolar transistor layer structure, 13
SrTiO; Defect distribution and evolution in He” implanted Si stu-
Microstructure of yttrium stabilized ZrO, crystals with died by variable-energy positron beam, 245
CeO, and SrTiO; intermediate layers, 207 Traps
Stress Electrical, optical and photovoltaic effect in pyronine G (Y)
Structure changes in a-C:H films in inductive CHy,/Ar based thin film sandwich devices, 176
plasma deposition, 103 Tribology
Stresses in Al/TiW/Si(100) contacts during thermal cycling, Amorphous hydrogenated carbon nitride films deposited
264 via an expanding thermal plasma at high growth rates, 29
Structure Formation and characterization of multiphase film proper-
Sexithiophene thin films epitaxially oriented on polytetra- ties of (Ti-Cr)N formed by cathodic are deposition, 88
flouroethylene substrates: structure and morphology, Tungsten
272 Growth characteristics and electrical resistivity of chemical
Surface plasmon measurements vapor-deposited tungsten film, 108
Preparation of the nucleoside-containing nanolayered film Tungsten hexaflouride
by the layer-by-layer deposition technique, 5 Growth characteristics and electrical resistivity of chemical
Surface plasmon resonance vapor-deposited tungsten film, 108
The adsorption of monolayer coatings on iron nanoparti- Vacancies
cles: Mossbauer spectroscopy and XANES results, 82 Defect distribution and evolution in He’ implanted Si stu-
Surface roughness died by variable-energy positron beam, 245
XPS and AFM study of chemical mechanical polishing of XANES spectroscopy
silicon nitride, 219 The adsorption of monolayer coatings on iron nano-parti-
Surface structure cles: Méssbauer spectroscopy and XANES results, 41
Excitation energy transfer in Langmuir—Blodgett films of 5- X-ray absorption
(4-N-octadecylpyridyl)-10,15,20-tri-p-tolylporphyrin on Oxy-acetylene flame chemical vapour deposition of dia-
gold-evaporated glass substrates studied by time- mond film. Part II: the influence of deposition para-
resolved fluorescence spectroscopy, | meters on diamond composition, 65
Texture X-ray diffraction
Residual stress determination in PECVD TiN coatings by Characterization of SiGe base layer in Si/SiGe heterojunc-
X-ray diffraction: a parametric study, 50 tion bipolar transistor layer structure, 13
Thin films Residual stress determination in PECVD TIN coatings by
A chemical vapour deposition route to MoO;—B1,O; thin X-ray diffraction: a parametric study, 50
films, 35 Growth temperature effect on the heteroepitaxy of InSb
Non-catalytic displacement plating (NCDP) of photosensi- films on a Si(00l) substrate covered with Ge islands,
tive semiconducting thin films, 287 60
TiN/HSS Grazing incidence X-ray diffraction analysis of alkali fluor-
Simulation of Berkovich nanoindentation experiments on ide thin films for optical devices, 157
thin films using finite element method, 278 X-ray photoelectron spectroscopy
Titanium Electrical and optical properties off luorine-doped ZnO thin
Monte Carlo simulations of sputter deposition and step films prepared by spray pyrolysis, 196
coverage of thin films, 77 XPS and AFM study of chemical mechanical polishing of
Titanium dioxide silicon nitride, 219
The growth of TiO; thin films on mixed self-assembly mono- Yttrium stabilized ZrO, crystals
layers from solution, 25 Microstructure of yttrium stabilized ZrO, crystals with
Titanium nitride CeO, and SrTiO; intermediate layers, 207
Formation and characterization of multiphase film proper- Zinc oxide
ties of (Ti-Cr)N formed by cathodic arc deposition, 88 Electrical and optical properties of fluorine-doped ZnO thin
Titanium nitride coatings films prepared by spray pyrolysis, 196
Residual stress determination in PECVD TiN coatings by Zinc porphyrin
X-ray diffraction: a parametric study, 50 Photocurrent increment in organic solar cell with mixed
Transmission electron microscopy solid of merocyanine and zinc porphyrin, 256