Thin Solid Films 1998: Vol 321 Index

8 Pages·1998·2.4 MB·English

Thin Solid Films 321 (1998) 265-266
Author Index of Volume 321
Abstreiter, G. 219, 245 Glueck, M. 136 Komiyama, S. 65 Reinking, D. 125
Aers, G.C. 158, 167 Griffin, N. 181 Kriiger, D. 21 Rim, K. 41
Ahmed, A. 181 Griitzmacher, D. 26 Robbins, D.J. 181
Aoyama, T. 256 Lafontaine, H. 141, 158, 196 Roe, K.J. 47
Hackbarth, T. 136 Lange, C. 70 Rolfe, S.J. 167
Bachle, D. 26 Hacke, M. 251 Larsen, A.N. 92 Ropke, W. 11
Ballik, E.A. 228 Hansch, W. 206, 261 Le Thanh, V. 98 Rowell, N.L. 158, 167
Baribeau, J.-M. 141 Hansson, G.V. 15, 131, 223 Lippert, G. 11, 21 Riicker, H. 11
Barth, R. 11 Hartmann, R. 26 Liu, X. 116, 163
Bauer, G. 33 Heinemann, B. 11 Lu, F. 60 Saito, S. 256
Bauer, M. 148 Heinrich, B. 196 Lundsgaard Hansen, J. 92 Sakamoto, K. 55
Bay, H. 219 Herzog, H.-J. 136 Lustig, B. K., 245 Schafer, H. 245
Bay, H.L. 251 Hoeck, G. 136 Schaffler, F. 1, 33
Berger, P.R. 47 Hofmann, K.R. 125 Schley, P. 11, 21
Mantl, S. 251
Bieringer, P. 261 Holzbrecher, H. 219 Mao, M. 116 Schmidt, O.G. 70, 86
Blum, K. 21 Horn-von Hoegen, M. 125 Schnappauf, P. 26
Matsuhata, H. 55
Brunner, K. 86, 219, 245 Houghton, D.C. 167 Mesters, S. 251 Schoéllhorn, C. 86
Brunthaler, G. 33 Hoyt, J.L.41 Mitchell, T.O. 41 Seyringer, H. 33
Buchal, Ch. 219 Hu, C.-w. 60 Miyake, Y. 153 Shayegan, M. 51
Buyanova, I.A. 223 Hu, D. 116 Monemar, B. 223 Shibata, N. 234
Hu, J. 116 Shiraki, Y. 65, 81, 153, 241
Miiller, E. 26
Cai, S.J. 76 Huang, D. 60, 116, 163 Myrtle, K. 196 Shiryaev, S.Y. 92
Cardenas, J. 131 Hultman, L. 15 Shukla, S.P. 51
Cers, V.A. 228 Hwang, S.-H. 111 Silvestre, C. 120
Neufeld, E. 219
Chang, C.L. 51 Simons, D.S. 120
Ni, W.-X. 15, 131, 223
Chen, Y. 60 Ishikawa, Y. 234 Singh, D.V. 41
Chena, W.M. 223 Sorge, R. 21
Oehme, M. 148
Chun, S.K. 111 Jensen, F. 92 Soyez, H.M. 76
Ogryzlo, E.A. 196
Churchill, A.C. 181 Jernigan, G. 120 Sproule, G.I. 167
Olowolafe, J.O. 47
Jiang, Z. 116 Stangl, J. 33
Dashiell, M.W. 47 Jiang, Z.-m. 60 Orner, B. 47 Sticht, A. 219
Dion, M. 167 Jin, G.L. 76 Osten, H.J. 11, 21
Strass, A. 261
Dobler, H. 245 Joelsson, K.B. 15, 223 Sturm, J.C. 51
Dommann, A. 26 Joo, S.-J. 111 Pak, M. 201 Sunamura, H. 65
Du, C.-X. 223 Pan, W. 51 Svensson, B.G. 131
Dunn, B.S. 76 Kaesen, F. 106, 206, 261 Paul, D.J. 172, 181
Kalus, M. 106 Pedersen, E.V. 92
Tang, Y.S. 76
Eberl, K. 70, 86 Kammler, M. 125 Penn, C. 33
Tanner, M.O. 55, 201
Eisele, I. 106, 206, 261 Kappius, L. 251 Pepper, M. 181
Tatsumi, T. 256
Ernst, F. 70, 86 Kasper, E. 148 Perovic, D.D. 167
Thompson, P.E. 120
Khan, A-S. 47 Petersen, J.W. 92
Fehlauer, G. 261 Kibbel, H. 136 Phillips, J.R. 167
Troeger, R.T. 47
Fink, C. 206 Kienzle, O. 70, 86
Twigg, M. 120
Fischer, A. 261 Kim, J.Y. 215 Pozina, G. 15, 223
Fischer, G. 11, 21 Kim, Y.D. 111 Presting, H. 186
Venkataraman, V. 51
Fukatsu, S. 65, 81, 153, 243
Qin, J. 60
Kishimoto, Y. 81
Wallis, D.J. 181
Gennser, U. 26 Knoll, D. 11 Wang, D. 55
Gibbons, J.F. 41 Kolodzey, J. 47
Rao, V.R. 206 Wang, K.L. 55, 76, 201
0040-6090/98/$19.00 © 1998 Elsevier Science S.A. All rights reserved
PII §$0040-6090(98)00858-X
266 Author Index of Volumes 321
Zhu, H.-j. 60
Wang, X. 60, 116, 163 Xu, A. 116 Zerlauth, S. 33
Zhu, X. 201
Whang, K.-W. 111 Yaguchi, H. 241 Zhang, X. 116
Zhu, Z. 60
Williams, R.L. 158 Yamamoto, T. 241 Zheng, L. 196
Wilson, R.G. 47 Yao, T. 60 Zheng, X. 201
Wohl, G. 86 Yoon, E. 111 Zhu, H. 116, 163
jis’
Thin Solid Films 321 (1998) 267-271
Subject Index of Volume 321
Ammonium fluoride Cl,
Fabrication of SiGe quantum dots: a new approach based on Si selective epitaxial growth using Cl, pulsed molecular flow
selective growth on chemically prepared H-passivated method, 256
Si(100) surfaces, 98 CMOS
Antimony Silicon germanium heterostructures in electronics: the present
Atomic hydrogen for the formation of abrupt Sb doping pro- and the future, 172
files in MBE-grown Si, 120
Atomic force microscopy 2D hole gas
Characterization of self-assembled Ge islands on Si(100) by Effective mass measurement in two-dimensional hole gas in
atomic force microscopy and transmission electron micro- strained Si,_,-,Ge,C,/ Si(100) modulation doped hetero-
scopy, 86 structures, 51
Bimodal height distribution of self-assembled germanium 6-doping
islands grown on Sip g4Geo,;6 pseudo-substrates, 92 Bistable diodes grown by silicon molecular beam epitaxy, 201
Atomic hydrogen Diode
Atomic hydrogen for the formation of abrupt Sb doping pro- Bistable diodes grown by silicon molecular beam epitaxy, 201
files in MBE-grown Si, 120 Dopant surface segregation
Avalanche suppression Role of strain in dopant surface segregation during Si and SiGe
Electric field tailoring in MBE-grown vertical sub-100 nm growth by molecular beam epitaxy, 131
MOSFETs, 206 Doping
Avalanche switching Electrical and optical properties of phosphorus doped Ge, _,C,,
Application of selective epitaxial growth in MBE for short- 47
duration gating systems, 228 Surfactant-grown low-doped germanium layers on silicon with
high electron mobilities, 125
Band alignment
Photoluminescence in UHV-CVD-grown Si,_,Ge, quantum Electrical properties
wells on Si(100): band alignment variation with excitation Comparison of Si/Si,_,-,Ge,C, and Si/Si; _,C, heterojunctions
density and applied uniaxial stress, 158 grown by rapid thermal chemical vapor deposition, 41
Band engineering Electrical and optical properties of phosphorus doped Ge, _,C,,
Bistable diodes grown by silicon molecular beam epitaxy, 201 47
Bistability Electrical properties of two-dimensional electron gases grown
Bistable diodes grown by silicon molecular beam epitaxy, 201 on cleaned SiGe virtual substrates, 181
Boron contamination Electric-field tailoring
Quantitative secondary ion mass spectrometry analysis of SiO, Electric field tailoring in MBE-grown vertical sub-100 nm
desorption during in situ heat cleaning, 148 MOSFETs, 206
Electroluminescence
Carbon Luminescence from erbium- and oxygen-doped SiGe grown by
Molecular beam epitaxial growth and photoluminescence molecular beam epitaxy, 219
investigation of Si,_,C, layers, 33 Electron microscopy
Carbon incorporation Bimodal height distribution of self-assembled germanium
Carbon-containing group IV heterostructures on Si: properties islands grown on Sip g4Gepo,;6 pseudo-substrates, 92
and device applications, 11 Epitaxial silicides
Carrier lifetime Self-ordering of CoSi, precipitates and epitaxial layer growth
Optimized processing for differentially molecular beam epi- of CoSi, on Si(100), 251
taxy-grown SiGe(C) devices, 21 Epitaxy
Chemical vapor deposition Comparison of Si/Si,_,-,Ge,C, and Si/Si; _,C, heterojunctions
Comparison of Si/Si,_,-,Ge,C, and Si/Si,_,C, heterojunctions grown by rapid thermal chemical vapor deposition, 41
grown by rapid thermal chemical vapor deposition, 41 Bimodal height distribution of self-assembled germanium
X-Ray scattering investigation of the interfaces in Si/Si, _,Ge, islands grown On Sip4Geo,;6 pseudo-substrates, 92
superlattices on Si(001) grown by MBE and UHV-CVD, Si selective epitaxial growth using Cl, pulsed molecular flow
14] method, 256
0040-6090/98/$19.00 © 1998 Elsevier Science S.A. All rights reserved
PII §$0040-6090(98)00859- 1
268 Subject Index of Volumes 321
Er,O; and ErF; doped Si layers Infrared detectors
Incorporation and luminescence properties of Er.O; and ErF; Near and mid infrared silicon/germanium based photodetec-
doped Si layers grown by molecular beam epitaxy, 223 tion, 186
Erbium Interdiffusion
Luminescence from erbium- and oxygen-doped SiGe grown by Effect of Sb as a surfactant on the inner diffusion of epilayer
molecular beam epitaxy, 219 Ge atoms into Si substrate, 116
Exciton binding energy Interface
Quantum confined Stark shifts in type-I SiGe quantum struc- Quantitative secondary ion mass spectrometry analysis of SiO,
tures, 215 desorption during in situ heat cleaning, 148
Interfacial states
Facet structure Formation of thin gate oxides on SiGe with atomic oxygen,
Fabrication of SiGe quantum dots: a new approach based on 196
selective growth on chemically prepared H-passivated
Si(100) surfaces, 98 Lattice strain
Role of strain in dopant surface segregation during Si and SiGe
Germanium growth by molecular beam epitaxy, 131
Alignment of Ge three-dimensional islands on faceted Si(001) Layer thickness variation
surfaces, 55 Effect of layer thickness variation on light scattering by acous-
Bimodal height distribution of self-assembled germanium tic phonons in SiGe/Si superlattices, 163
islands grown on Sipg4Gepo,}, pseudo-substrates, 92 Low dimensional structures
Surfactant-grown low-doped germanium layers on silicon with Epitaxial Si/SiO, low dimensional structures, 234
high electron mobilities, 125 Luminescence
Photoluminescence in UHV-CVD-grown Si,_,Ge, quantum Incorporation and luminescence properties of Er.O3 and ErF;
wells on Si(100): band alignment variation with excitation doped Si layers grown by molecular beam epitaxy, 223
density and applied uniaxial stress, 158
Ge dots Mass measurement
Influence of pre-grown carbon on the formation of germanium Effective mass measurement in two-dimensional hole gas in
dots, 70 strained Si,;_,-,Ge,C,/ Si(100) modulation doped hetero-
Germanium carbon structures, 51
Electrical and optical properties of phosphorus doped Ge, _,C,, MBE-grown pin diodes
47 Low temperature electrical surface passivation of MBE-grown
Growth conditions pin diodes by hydrogen and oxygen plasma processes, 261
Optimization of growth conditions for strained Si/Si,_,C, MODFET
structures, 15 Silicon germanium heterostructures in electronics: the present
Growth mechanism and the future, 172
Bimodal height distribution of self-assembled germanium Molecular beam epitaxy
islands grown on Sip g4Geo 16 pseudo-substrates, 92 Optimization of growth conditions for strained Si/Si;_,C,
structures, 15
Hall mobility Si, -,-yGe,C,/Si quantum well structures: electrical and optical
Surfactant-grown low-doped germanium layers on silicon with properties, 26
high electron mobilities, 125 Molecular beam epitaxial growth and photoluminescence
Heterobipolar transistor investigation of Si,_,C, layers, 33
Carbon-containing group IV heterostructures on Si: properties Electrical and optical properties of phosphorus doped Ge, _,C,,
and device applications, 11 47
Optimized processing for differentially molecular beam epi- Self-organized germanium quantum dots grown by molecular
taxy-grown SiGe(C) devices, 21 beam epitaxy on Si(100), 60
Heteroepitaxy Suppression of phonon replica in the radiative recombination
Surfactant-grown low-doped germanium layers on silicon with of an MBE-grown type-II Ge/Si quantum dot, 65
high electron mobilities, 125 Influence of pre-grown carbon on the formation of germanium
Heterojunction bipolar transistor dots, 70
Silicon germanium heterostructures in electronics: the present Direct MBE growth of SiGe dots on ordered mesoporous
and the future, 172 glass-coated Si substrate, 76
H-passivation Characterization of self-assembled Ge islands on Si(100) by
Optimized processing for differentially molecular beam epi- atomic force microscopy and transmission electron micro-
taxy-grown SiGe(C) devices, 21 scopy, 86
Hydrogen atoms Effect of Sb as a surfactant on the inner diffusion of epilayer
Formation of thin gate oxides on SiGe with atomic oxygen, 196 Ge atoms into Si substrate, 116
Atomic hydrogen for the formation of abrupt Sb doping pro-
In situ cleaning oxide desorption files in MBE-grown Si, 120
Quantitative secondary ion mass spectrometry analysis of SiO, Surfactant-grown low-doped germanium layers on silicon with
desorption during in situ heat cleaning, 148 high electron mobilities, 125
Subject Index of Volumes 321 269
Role of strain in dopant surface segregation during Si and SiGe Gas-source molecular beam epitaxial growth of SiGe alloy-
growth by molecular beam epitaxy, 131 based ‘naked’ quantum wells, 81
X-Ray scattering investigation of the interfaces in Si/Si, _,Ge, Photoluminescence in UHV-CVD-grown Si,_,Ge, quantum
superlattices on Si(001) grown by MBE and UHV-CVD, wells on Si(100): band alignment variation with excitation
14] density and applied uniaxial stress, 158
Spontaneous oscillator strength modulation in MBE-grown Si/ Luminescence from erbium- and oxygen-doped SiGe grown by
Ge superlattices, 153 molecular beam epitaxy, 219
Near and mid infrared silicon/germanium based photodetec- Characterization of SiGe strained heterostructures grown by
tion, 186 molecular beam epitaxy using a Si effusion cell, 241
Incorporation and luminescence properties of Er,O; and Photoreflectance
ErF; doped Si layers grown by molecular beam epitaxy, Characterization of SiGe strained heterostructures grown by
223 molecular beam epitaxy using a Si effusion cell, 241
Epitaxial Si/SiO, low dimensional structures, 234 Plasma processes
Characterization of SiGe strained heterostructures grown by Low temperature electrical surface passivation of MBE-
molecular beam epitaxy using a Si effusion cell, 241 grown pin diodes by hydrogen and oxygen plasma pro-
Molecular beam epitaxy growth and thermal stability of cesses, 261
Si,_,Ge, layers on extremely thin silicon-on-insulator sub-
strates, 245 Quantum confined Stark shift
Self-ordering of CoSi, precipitates and epitaxial layer growth Quantum confined Stark shifts in type-I SiGe quantum struc-
of CoSi, on Si(100), 251 tures, 215
Molecular beam epitaxial growth Quantum dots
Gas-source molecular beam epitaxial growth of SiGe alloy- Alignment of Ge three-dimensional islands on faceted Si(001)
based ‘naked’ quantum wells, 81 surfaces, 55
MOSFET Self-organized germanium quantum dots grown by molecular
Si/Si, _,.Ge, and Si/Si,_,C, heterostructures: materials for high- beam epitaxy on Si(100), 60
speed field-effect transistors, 1 Influence of pre-grown carbon on the formation of germanium
Silicon germanium heterostructures in electronics: the present dots, 70
and the future, 172 Fabrication of SiGe quantum dots: a new approach based on
Multiple quantum wells selective growth on chemically prepared H-passivated
Growth of SiGe/Si multiple quantum wells by ultra-high- Si(100) surfaces, 98
vacuum electron cyclotron resonance chemical vapor Quantum effect device
deposition, 111 Silicon germanium heterostructures in electronics: the present
and the future, 172
Non-linear transmission lines Quantum structures
Application of selective epitaxial growth in MBE for short- Characterization of self-assembled Ge islands on Si(100) by
duration gating systems, 228 atomic force microscopy and transmission electron micro-
scopy, 86
Optical Quantum well
Electrical and optical properties of phosphorus doped Ge; _,C), Gas-source molecular beam epitaxial growth of SiGe alloy-
47 based ‘naked’ quantum wells, 81
Ordered supperlattices Quantum well structure
Spontaneous oscillator strength modulation in MBE-grown Si/ Si, -,-yGe,C,/Si quantum well structures: electrical and optical
Ge superlattices, 153 properties, 26
Oscillator strength Quantum wire
Spontaneous oscillator strength modulation in MBE-grown Si/ Quantum wire transistor at locally grown edges, 106
Ge superlattices, 153
Oxidation Radiative recombination
Formation of thin gate oxides on SiGe with atomic oxygen, Suppression of phonon replica in the radiative recombination
196 of an MBE-grown type-II Ge/Si quantum dot, 65
Raman scattering
PDBFET Effect of layer thickness variation on light scattering by acous-
Electric field tailoring in MBE-grown vertical sub-100 nm tic phonons in SiGe/Si superlattices, 163
MOSFETs, 206 Rapid thermal annealing
Phosphorus Si; -,-yGe,C,/Si quantum well structures: electrical and optical
Electrical and optical properties of phosphorus doped Ge, _,C,, properties, 26
47 Relaxed buffers
Photoluminescence Artificial substrates for n- and p-type SiGe heterostructure
Molecular beam epitaxial growth and photoluminescence field-effect transistors, 136
investigation of Si,_,C, layers, 33 Rocking curves
Influence of pre-grown carbon on the formation of germanium Molecular beam epitaxial growth and photoluminescence
dots, 70 investigation of Si,_,C, layers, 33
270 Subject Index of Volumes 321
Sb Silicon and germanium
Surfactant-grown low-doped germanium layers on silicon with Carbon-containing group IV heterostructures on Si: properties
high electron mobilities, 125 and device applications, 11
Secondary ion mass spectrometry Near and mid infrared silicon/germanium based photodetec-
Atomic hydrogen for the formation of abrupt Sb doping pro- tion, 186
files in MBE-grown Si, 120 Luminescence from erbium- and oxygen-doped SiGe grown by
Selective epitaxial growth molecular beam epitaxy, 219
Application of selective epitaxial growth in MBE for short- Si,.,Ge,
duration gating systems, 228 Growth of SiGe/Si multiple quantum wells by ultra-high-
Si selective epitaxial growth using Cl, pulsed molecular flow vacuum electron cyclotron resonance chemical vapor
method, 256 deposition, 111
Selective growth Si, _,Ge,
Fabrication of SiGe quantum dots: a new approach based on Molecular beam epitaxy growth and thermal stability of
selective growth on chemically prepared H-passivated Si,_,Ge, layers on extremely thin silicon-on-insulator sub-
Si(100) surfaces, 98 strates, 245
Self-assembled Ge islands Si, _,Ge, quantum wells
Characterization of self-assembled Ge islands on Si(100) by Quantum confined Stark shifts in type-I SiGe quantum struc-
atomic force microscopy and transmission electron micro- tures, 215
scopy, 86 SiGe
Self-ordering Optimized processing for differentially molecular beam epi-
Self-ordering of CoSi, precipitates and epitaxial layer growth taxy-grown SiGe(C) devices, 21
of CoSi, on Si(100), 251 Si; _,-yGe,C,/Si quantum well structures: electrical and optical
Self-organised growth properties, 26
Quantum wire transistor at locally grown edges, 106 Influence of pre-grown carbon on the formation of germanium
Self-organization dots, 70
Alignment of Ge three-dimensional islands on faceted Si(001) Gas-source molecular beam epitaxial growth of SiGe alloy-
surfaces, 55 based ‘naked’ quantum wells, 81
Short-duration gating Surfactant-grown low-doped germanium layers on silicon with
Application of selective epitaxial growth in MBE for short- high electron mobilities, 125
duration gating systems, 228 Formation of thin gate oxides on SiGe with atomic oxygen,
Silicon 196
Molecular beam epitaxial growth and photoluminescence Si/Ge quantum well and superlattices
investigation of Si,_,C, layers, 33 Near and mid infrared silicon/germanium based photodetec-
Comparison of Si/Si,_,-,Ge,C, and Si/Si;_,C, heterojunc- tion, 186
tions grown by rapid thermal chemical vapor deposition, Si/SiGe heterostructures
41 Silicon germanium heterostructures in electronics: the present
Alignment of Ge three-dimensional islands on faceted Si(001) and the future, 172
surfaces, 55 Si/SiGe superlattice
Bimodal height distribution of self-assembled germanium X-Ray scattering investigation of the interfaces in Si/Si;_,Ge,
islands grown on Sig.4Gep1 , pseudo-substrates, 92 superlattices on Si(001) grown by MBE and UHV-CVD,
Atomic hydrogen for the formation of abrupt Sb doping pro- 141
files in MBE-grown Si, 120 Si/Si0,
Photoluminescence in UHV-CVD-grown Si,_,Ge, quantum Epitaxial Si/SiO, low dimensional structures, 234
wells on Si(100): band alignment variation with excitation SiGe alloy
density and applied uniaxial stress, 158 Si selective epitaxial growth using Cl, pulsed molecular flow
Si(100) method, 256
Effective mass measurement in two-dimensional hole gas in SiGe dot matrix
strained Si,_,-,Ge,C,/ Si(100) modulation doped hetero- Direct MBE growth of SiGe dots on ordered mesoporous
structures, 51 glass-coated Si substrate, 76
Si(111) SiGe MODFETs
Surfactant-grown low-doped germanium layers on silicon with Artificial substrates for n- and p-type SiGe heterostructure
high electron mobilities, 125 field-effect transistors, 136
Si effusion cell SiGe substrates
Characterization of SiGe strained heterostructures grown by Electrical properties of two-dimensional electron gases grown
molecular beam epitaxy using a Si effusion cell, 241 on cleaned SiGe virtual substrates, 181
Si substrate SiGe/C
Direct MBE growth of SiGe dots on ordered mesoporous Optimized processing for differentially molecular beam epi-
glass-coated Si substrate, 76 taxy-grown SiGe(C) devices, 21
S$i/Si, _,C, SiGe/Si base heterostructure bipolar transistors (HBTs)
Optimization of growth conditions for strained Si/Si,_,C, Structural characterization of a UHV/CVD-grown SiGe HBT
structures, 15 a with graded base, 167
Subject Index of Volumes 321
SiGe/Si superlattices Thermal stability
Effect of layer thickness variation on light scattering by acous- Molecular beam epitaxy growth and thermal stability of
tic phonons in SiGe/Si superlattices, 163 Si, _,Ge, layers on extremely thin silicon-on-insulator sub-
Silicon MBE strates, 245
Quantum wire transistor at locally grown edges, 106 Three-dimensional islanding growth
Quantitative secondary ion mass spectrometry analysis of SiO, Self-organized germanium quantum dots grown by molecular
desorption during in situ heat cleaning, 148 beam epitaxy on Si(100), 60
Electric field tailoring in MBE-grown vertical sub-100 nm Transmission electron microscopy
MOSFETs, 206 Characterization of self-assembled Ge islands on Si(100) by
Silicon molecular beam epitaxy atomic force microscopy and transmission electron micro-
Application of selective epitaxial growth in MBE for short- scopy, 86
duration gating systems, 228 Tunnel
Silicon MOSFET Bistable diodes grown by silicon molecular beam epitaxy, 201
Quantum wire transistor at locally grown edges, 106 Two-dimensional electron gases
Silicon-based heterostructure Electrical properties of two-dimensional electron gases grown
Si/Si,; _,Ge, and Si/Si, _,C, heterostructures: materials for high- on cleaned SiGe virtual substrates, 181
speed field-effect transistors, 1 Type-II Ge/Si quantum dot
Silicon-germanium heterojunction bipolar transistors Suppression of phonon replica in the radiative recombination
Application of selective epitaxial growth in MBE for short- of an MBE-grown type-II Ge/Si quantum dot, 65
duration gating systems, 228
Stanski—-Krastanov growth Ultra-high-vacuum chemical vapor deposition (UHV/CVD)
Alignment of Ge three-dimensional islands on faceted $i(001) Structural characterization of a UHV/CVD-grown SiGe HBT
surfaces, 55 with graded base, 167
Characterization of self-assembled Ge islands on Si(100) by Si selective epitaxial growth using Cl, pulsed molecular flow
atomic force microscopy and transmission electron micro- method, 256
scopy, 86 Ultra-high-vacuum electron cyclotron resonance chemical vapor
Strain compensation deposition (UHV-ECRCVD)
Influence of pre-grown carbon on the formation of germanium Growth of SiGe/Si multiple quantum wells by ultra-high-
dots, 70 vacuum electron cyclotron resonance chemical vapor
Strain relaxation deposition, 111
Molecular beam epitaxy growth and thermal stability of
Si, _,Ge, layers on extremely thin silicon-on-insulator sub- Velocity overshoot
strates, 245 Electric field tailoring in MBE-grown vertical sub-100 nm
Strain-adjusting epilayer MOSFETs, 206
Si/Si, _,Ge, and Si/Si; _,C, heterostructures: materials for high- Vertical sub-100 nm MOSFETs
speed field-effect transistors, 1 Electric field tailoring in MBE-grown vertical sub-100 nm
Strained layer MOSFETs, 206
Carbon-containing group IV heterostructures on Si: properties VLSI technology
and device applications, 11 Si/Si, _,Ge, and Si/Si; _,C, heterostructures: materials for high-
Structural characterization speed field-effect transistors, 1
Structural characterization of a UHV/CVD-grown SiGe HBT
with graded base, 167 X-ray
Surface passivation Molecular beam epitaxial growth and photoluminescence
Low temperature electrical surface passivation of MBE-grown investigation of Si;_,C, layers, 33
pin diodes by hydrogen and oxygen plasma processes, 261 X-ray diffraction
Surface roughness Characterization of SiGe strained heterostructures grown by
Artificial substrates for n- and p-type SiGe heterostructure molecular beam epitaxy using a Si effusion cell, 241
field-effect transistors, 136 X-ray scattering
Surfactant X-ray scattering investigation of the interfaces in Si/Si,_,Ge,
Effect of Sb as a surfactant on the inner diffusion of epilayer superlattices on Si(001) grown by MBE and UHV-CVD,
Ge atoms into Si substrate, 116 141
Surfactant-grown low-doped germanium layers on silicon with
high electron mobilities, 125
Surfactant-assisted growth
Atomic hydrogen for the formation of abrupt Sb doping pro-
files in MBE-grown Si, 120