Table Of Content

Volume 302, Numbers |1—2, 20 June 1997 Contents Thickness dependent properties of chemically deposited Bi,S, thin films C.D. Lokhande, A.U. Ubale and P.S. Patil Thin film characterization of diamond-like carbon films prepared by r.f. plasma chemical vapor deposition K.K. Hirakuri, T. Minorikawa, G. Friedbacher and M. Grasserbauer Chemical bath deposition of cubic copper (I) selenide and its room temperature transformation to the orthorhombic phase C. Lévy-Clément, M. Neumann-Spallart, S.K. Haram and K.S.V. Santhanam The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-en- hanced chemical vapor deposition H.-Y. Kim, K.-Y. Lee and J.-Y. Lee Effect of process parameters on the characteristics of indium tin oxide thin film for flat panel display application B.H. Lee, I.G. Kim, S.W. Cho and S.-H. Lee Charge transfer reactions yielding conductive radical ion salt films of dicyanoquinonediimine A. Edelmann and H. Wachtel Incoherent superposition in ellipsometric measurements K. Forcht, A. Gombert, R. Joerger and M. Kohl Characterization of porous silicon by means of photoacoustic spectroscopy M. Ohmukai and Y. Tsutsumi Indirect transitions caused by electron—dislocation interaction in size-quantized semiconductor film E.M. Kazaryan, K.A. Mkhoyan and H.A. Sarkisyan Carbon nitride CN, film deposition assisted by IR laser ablation in a cold remote nitrogen plasma C. Jama, V. Rousseau, O. Dessaux and P. Goudmand Electrochromism and photochromism in amorphous molybdenum oxide films J. Scarminio, A. Lourengo and A. Gorenstein Electrodeposition and optical characterisation of CdS thin films on ITO-coated glass G. Sasikala, R. Dhanasekaran and C. Subramanian Titanium thin film deposition in a deuterium atmosphere R. Checchetto Effect of annealing on physical properties of conducting poly(ortho-anisidine) Langmuir—Blodgett films M.K. Ram, S. Carrara, S. Paddeu and C. Nicolini Palladium membranes supported on porous ceramics prepared by chemical vapor deposition L. Huang, C.S. Chen, Z.D. He, D.K. Peng and G.Y. Meng Raman scattering studies of amorphous Si ,Ge,_ ,:H alloy films produced by hot-filament assisted chemical vapour deposition technique A.A. Kumbhar and S.T. Kshirsagar Formation of Ti amorphous films deposited on liquid nitrogen-cooled substrates by ion-beam sputtering R.C. Yu and W.K. Wang Elsevier Science S.A. Contents A surface and interface study on the InSb /GaAs heterostructures K. Li, A.T.S. Wee, J. Lin, K.K. Lee, F. Watt, K.L. Tan, Z.C. Feng and J.B. Webb Characteristics of ZnO thin films deposited onto Al /Si substrates by r.f. magnetron sputtering K.H. Yoon, J.-W. Choi and D.-H. Lee Ultrasonic micromachining on Al thin film using atomic force microscopy combined quartz crystal resonator F. Iwata, M. Kawaguchi, H. Aoyama and A. Sasaki Morphology of TiSi, films on Si formed from co-deposited Ti and Si S.B. Herner, V. Krishnamoorthy, A. Naman, K.S. Jones, H.-J. Gossmann and R.T. Tung Structural changes in ZnO /NiO artificial superlattices made by ion beam sputtering S. Nishizawa, T. Tsurumi, H. Hyodo, Y. Ishibashi, N. Ohashi, M. Yamane and O. Fukunaga CVD synthesis and SNMS characterization of thin films of ABO, perovskite-type materials (PbTiO,, La(Sr)CoO,, La(Sr)MnO,, LaNiO,) J.A. Rebane, O.Yu. Gorbenko, S.G. Suslov, N.V. Yakovlev, I.E. Korsakov, V.A. Amelichev and Yu.D. Tretyakov An X-ray diffraction study of epitaxial TIN /NDN superlattices A. Madan, P. Yashar, M. Shinn and S.A. Barnett Temperature dependence of lead loss in r.f. magnetron sputtering of a stoichiometric Pb(Zr,Ti)O, target N.A. Basit, H.K. Kim and J. Blachere Studies of Na-irradiated Ni/Si bilayers: Na migration and NiSi formation K.P. Lieb, P. Haussalo, W. Bolse, C. Illgner, J. Keinonen and M. Niederdrenk Room temperature wafer surface cleaning by in-situ ECR (electron cyclotron resonance) hydrogen plasma for silicon homoepitaxial growth H.-w. Kim, Z.-H. Zhou and R. Reif lon-assisted growth of Ti,_,Al,N/Ti,_,Nb,N multilayers by combined cathodic-arc /magnetron-sputter deposition I. Petrov, P. Losbichler, D. Bergstrom, J.E. Greene, W.D. Miinz, T. Hurkmans and T. Trinh The tribological characteristics of titanium nitride, titanium carbonitride and titanium carbide coatings Y.Y. Guu, J.F. Lin and C.-F. Ai Energy band offsets of SiGeC heterojunctions J. Kolodzey, F. Chen, B.A. Orner, D. Guerin and S. Ismat Shah Optical properties of SnO, thin films grown by atmospheric pressure chemical vapour deposition oxidizing SnCl, D. Davazoglou Analysis of light emitting diodes by X-ray reflectivity measurements T. Christ, F. Geffart, B. Glusen, A. Kettner, G. Liissem, O. Schafer, V. Stiimpflen, J.H. Wendorff and V.V. Tsukruk Influence of several compounds on the fluorescence of rare earth complexes Eu(TTA),Phen and Sm(TTA),Phen in LB films R.-J. Zhang, H.-G. Liu, C.-R. Zhang, K.-Z. Yang, G.-Y. Zhu and H.-W. Zhang Electric-field and photochemical effects in D85N mutant bacteriorhodopsin substituted with 4-keto-retinal P. Kolodner, E.P. Lukashev, Y.-c. Ching and A.B. Druzhko Polarization processes in anodic oxide films L.M. Kosjuk and L.L. Odynets Strain fields and unit ceil deformation in high-7, superconductor heterostructures M. Gusso, L. De Caro and L. Tapfer On the determination of the sp* to sp* ratio in diamond-like carbon thin films S.S. Mahajan, H.C. Barshilia, B.R. Mehta and V.D. Vankar Enhancement of electrical conductivity in sulfur-doped C,, films J. Gong, Y. Li, S. Lin, G. Ma, Y. Yang and G. Chen Formation of ultra-shallow junctions using epitaxial CoSi, thin film as diffusion sources K.S. Bae, J.R. Kim, S.Y. Hong, Y.B. Park and Y.S. Cho Temperature induced dissolution of Cr,O, into polycrystalline tantalum U. Rothhaar and H. Oechsner Contents Observation of the Burstein—Moss shift in heavily Te-doped In, ;Ga, ;P layers grown by liquid phase epitaxy I.T. Yoon, T.S. Ji and H.L. Park Author Index of Volume 302 The table of contents of Thin Solid Films is included in ESTOC—Elsevier Science Tables of Contents service—which can be accessed on the World Wide Web at the following URL addresses: http: // www.elsev/iloecarte. /neslto c or http: //www.elsevi/elorca.tec /oesmto c The publisher encourages the submission of articles in electronic form thus saving time and avoiding rekeying errors. A leaflet describing our requirements is available from the publisher upon request.