Table Of Content

ELSEVIER Volume 280, Numbers 1-2, July 1996 Contents Letter Effects of substrate temperature on the structure and properties of reactive pulsed laser deposited CN, films C.W. Ong, X.-A. Zhao, Y.C. Tsang, C.L. Choy, P.W. Chan (Kowloon, Hong Kong) Synthesis and Characterization Growth structure investigation of MgF, and NdF, films grown by molecular beam deposition on CaF,(111) substrates U. Kaiser (Jena, Germany), M. Adamik, G. Safran, P.B. Barna ( Budapest, Hungary), S. Laux, W. Richter (Jena, Germany) Growth of PbS and CdS thin films by low-pressure chemical vapour deposition using dithiocarbamates N.L. Fainer, M.L. Kosinova, Yu.M. Rumyantsev, E.G. Salman, F.A. Kuznetsov ( Novosibirsk, Russia) XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films MLN. Islam (Chittagong, Bangaladesh) ,T .B. Ghosh, K.L. Chopra, H.N. Acharya (Kharagpur, India) Plasma-enhanced chemical vapour deposition of thin films from tetraethoxysilane and methanol: optical properties and XPS analyses 26 L. Zajitkova, I. Ohifdal, J. Janéa (Brno, Czech Republic) Chemical—mechanical polishing of SiO, thin films studied by X-ray reflectivity W.E. Wallace, W.L. Wu (Gaithersburg, MD, USA), R.A. Carpio (Austin, TX, USA) Effect of N,O/SiH, ratio on the properties of low-temperature silicon oxide films from remote plasma chemical vapour deposition .... 43 Y.-B. Park, J.-K. Kang, S.-W. Rhee (Pohang, South Korea) Photoconductivity and recombination in amorphous Se/CdSe multilayers D. Nesheva (Sofia, Bulgaria) Iron pyrite films prepared by sulfur vapor transport H. Dahman (Gabés, Tunisia), M. Khalifa (City, Tunisia), M. Brunel (Grenoble, France), B. Rezig (City, Tunisia) Pulsed laser deposition of Bi,Te, thin films A. Dauscher, A. Thomy, H. Scherrer (Nancy, France) Structural, chemical, and electrical characterisation of reactively sputtered WS, thin films M. Regula, C. Ballif, J.H. Moser, F. Lévy (Lausanne, Switzerland) Epitaxially grown molybdenum thin films deposited by laser ablation on ( 100)MgO substrates M. Guilloux-Viry, A. Perrin, J. Padiou, M. Sergent (Rennes, France), C. Rossel (Riischlikon, Switzerland) Thickness correlated effects of the crystal and surface structure of C,o thin films grown on mica by hot wall epitaxy D. Stifter, H. Sitter (Linz, Austria) Electrochemical deposition of MoS, thin films by reduction of tetrathiomolybdate E.A. Ponomarev, M. Neumann-Spallart (Meudon, France), G. Hodes (Rehovot, Israel) ,C. Lévy-Clément (Meudon, France) Implantation effect of diamond-like carbon films by 110 keV nitrogen ions W.J. Wang, T.M. Wang, C. Jing (Lanzhou, People’s Republic of China) A theory for the formation of tetrahedral amorphous carbon including deposition rate effects Y. Yin, D.R. McKenzie (Sydney, N.S.W., Australia) Ultrathin silicon oxide films deposited by synchrotron irradiation of condensed layers of silanes and water J.F. Moore, D.R. Strongin (NY, USA) MBE growth and characterization of buried silicon oxide films on Si( 100) M. Hacke, H.L. Bay, S. Mant! (Jiilich, Germany ) New LaCuy ;Mny ;O, thin films deposited by the sol—gel process on different substrates D. Kovacheva, I. Stambolova, K. Konstantinov, T. Donchev (Sofia, Bulgaria) Elsevier Science S.A. vi Site symmetry of Yb** in Ing ;Gay <P B.S. Jeong, J.Y. An, J.C. Choi, H.L. Park, T.W. Kim (Seoul, South Korea) Graphite formation on Ni film by chemical vapor deposition M. Yudasaka, R. Kikuchi, T. Matsui, Y. Ohki, M. Baxendale, S. Yoshimura (Kawasaki, Japan), E. Ota (Gunma, Japan) The effect of the isopoly tungstate anion on the composition and conductivity of polypyrrole composite films M. Takahashi, T. Tsuchida ( Aichi, Japan),T .O htsuka (Nagoya, Japan) The infrared properties of magnetron-spuditatmoendr-elidke thin films G.A. Clarke, Y. Xie, J.E. Eldridge, R.R. Parsons (V ancouver, B.C., Canada) Grain size and strain in thin sputter-deposited Nip sFeo » and Cu films D.G. Neerinck, A-E.M. De Veirman, M.H.J. Slangen, Th.G.S.M. Rijks, J.C.S. Kools (Eindhoven, The Netherlands) Titanium-containing hydrofluoric acid pretreatment for aluminum chemical vapor deposition K. Sugai (Kanagawa, Japan), H. Okabayashi (Ibaraki, Japan), S. Kishida, T. Shinzawa ( Kanagawa, Japan) Twinning of YBa,Cu,O, thin films on different substrates D. Schweitzer, T. Bollmeier, B. Stritzker, B. Rauschenbach ( Augsburg, Germany ) The use of Ce( fod), as a precursor for the growth of ceria films by metal-organic chemical vapour deposition J. McAleese, J.C. Plakatouras, B.C.H. Steele (South Kensington, London, UK) Electroof CdulnSe, fproom asqueoius tsoliutioon nPar t I.E lectrodepoosfi Ctu-iS ofnil m T. Yukawa, K. Kuwabara,K .K oumoto (Nagoya, Japan) Surfaces, Interfaces and Colloidal Behaviour Depositoif oCenO , films including areas with the different orientation and sharp border between them LM. Kotelyanskii, V.A. Luzanov, Yu.M. Dikaev, V.B. Kravchenko (Moscow, Russia), B.T. Melekh (St. Petersburg, Russia) Application of Rachinger’s method to separate overlapped doublets in the X-ray photoelecstpercotrnu m M. Sreemany, T.B. Ghosh ( Kharagpur, India) Groowf tFe hon Si (100) at room temperature and formation of iron silicide K. Riéhmschopf, D. Borgmann, G. Wedler (Erlangen, Germany ) Electronic properties of theG e/RbF/GaAs system: the effect of the RbF intralayer B. Stankiewicz (Wroclaw, Poland) Comparison between newly developed and classical determinations of index and thickness of thin films on substrates by ellipsometry T. Easwarakhanthan, M. Remy ( Vandoeuvre lés Nancy, France) Metallurgical, Protective and Hard Layers Microsotf prlasumac-sptrayuedr Nei—A l alloy coationn mgil d steel H.C. Chen (Guangzhou, People’s Repubofl Cihicna) , E. Pfender (Minneapolis, MN, USA) In-situ measurement of stress generated during electrocrystallization of Fe—Ni alloys F. Czerwinski (Montreal, Que., Canada) Mechanics and Nanomechofa Tnhiin cLayser s Mechanical properties of a~C:H and a-C:H/SiO, nanocomposite thin films preparebdy ion-assisted plasma-enhanced chemical vapor deposition J.H. Lee, D.S. Kim, Y.H. Lee, B. Farouk (Philadelphia, PA, USA) Electronics, Optics and Opto-electronics Semiconducting and structural properties of CrSi, A-type epitaxial filon mSi(s 11 1) N.G. Galkin, T.V. Velitchko, S.V. Skripka, A.B. Khrustalev ( Vladivostok, Russia) Electrozlincu smulpihidne deeviscesc perodnucetd by sol-gel processing W. Tang, D.C. Cameron (Dublin, Ireland) Degradation of NiCr/CuNiMn/ NiCr films on alumina substrates W. Brickner, J. Edelmann, H. Vinzelberg, G. Reiss (Dresden, Germany), Th. Knuth (Teltow, Germany ) Degroaf thde elaecttrochiromoic nnic kel oxide film upon redox cycling Y. Ushio, A. Ishikawa, T. Niwa (Tokyo, Japan) Langmuir—BioBloglicaol dangd Reelattetd F,il ms A trough with radial compression for studies of monolayers and fabrication ofL angmuir—Blodgefitltm s M. Matsumoto, Y. Tsujii (Kyoto, Japan), K.-I. Nakamura (Tokyo, Japan), T. Yoshimoto (Osaka, Japan) Photoinduced energy and electron transfer of covalently linked zinc(II)-pyropheophytin-anthraquinone molecules in monolayers of Langmuir—Blodgett films N.V. Tkachenko (Tampere, Finland), A.Y. Tauber ( Helsinki, Finland), H.L emmetyinen (Tampere, Finland), P.H. Hynninen (Helsinki, Finland) Langmuir—Blodgett films of Cu(II) -tetrakis(3,3-dimethylbutox ycarbony]) phthalocyanine: a spectrophotometric and TEM analysis of D. Manno, R. Rella, L. Troisi, L. Valli (Lecce, Italy) Thin Film Devices, Sensors and Actuators Electron emission characterizofa dtiiamoonnd thin films grown from a solid carbon source S. Jou, H.J. Doerr, R.F. Bunshah (Los Angeles, CA, USA) Condensed Matter Film Behaviour Low frequency dispersion in GaSe thin films M.K. Anis, M.S. Khan, H. Asim (Karachi, Pakistan) Analysis of the oxidation kinetics and barrier layer properties of ZrN and Pt/Ru thin films for DRAM applications H.N. Al-Shareef, X. Chen, D.J. Lichtenwalner, A.1. Kingon (Raleigh, NC, USA) Amorphous semiconducting film containing nanometer particles of CuTCNQ: preparation, characterization and electrical switching S.-G. Liu, Y.-Q. Liu, D.-B. Zhu (Beijing, People’s Republic of China) Crystallization kinetics of Sb,Se,o9_ ,t hin films D. Dimitrov, M.A. Ollacarizqueta, C.N. Afonso (Madrid, Spain), N. Starbov (Sofia, Bulgaria) Author Index of Volume 280 Subject Index of Volume 280 The publisher encourages the submission of articles in electronic form thus saving time and avoiding rekeying errors. A leaflet describing our requirements is available from the publisher upon request.