Table Of Content

fia Thin Solid Films 274 (1996) 169 Author Index of Volume 274 Abdel Hady, K., 120 Hua, B., 150 Moisan, M., 3 Sundara Raja, V., 1 Afonso, C.N., 76 Huang, D., 63 Mukaida, M., 70 Sywe, B.S., 23 Ahmed, M.F., 120 Nakanishi, K., 138 Tamada, M., 66 Athouél, L., 35 Imai, Y., 70 Nakanishi, Y., 113 Tao, K., 63 Atkinson, A., 106 Iwase, M., 50 Ninomiya, S., 70 Thokala, R., 23 Izumi, T., 50 Northrup, M.A., 101 Tian, Z., 150 Bahulayan, C., 55 Tiankai, L., 147 Borges, C.F.M., 3 Jain, S.C., 106 Tjong, S.C., 95 Bradaczek, H., 143 Jayatissa, A.H., 113 Oishi, K., 133 Tsuji, K., 18 Jiang, H., 63 Okui, N., 66 Tsukamoto, A., 138 Jingmei, X., 147 Ollacarizqueta, M.A., 76 Catalina, F., 76 Tsunoda, T., 70 Johnson, G.C., 101 Omichi, H., 66 Chaudhuri, J., 23 Turta, C., 143 Johnson, T., 106 Osato, K., 70 Chen, Q., 160 Chen, Y., 150, 160 Wang, Y.N., 165 Park, S.-S., 154 Krulevitch, P., 101 Watanabe, A., 70 Popescu, M., 143 Damodara Das, V., 55 Lee, A.P., 101 Popova, K., 31 Xie, Z., 150 Danev, G., 31 Li, H., 63 Yamaguchi, T., 113 Li, Q., 150 Qin, F., 63 Yamamoto, K., 138 Edgar, J.H., 23 Lin, Z., 160 Yamauchi, H., 138 El-Kadry, N., 120 Linge, X., 147 Ramsey, P.B., 101 Yang, J., 160 Liu, Z., 63 Riou, M.T., 35 Yao, Z., 63 Lu, X.M., 165 Fan, Y.D., 46 Yulong, L., 147 Feng, J.Y., 46 Sato, S., 18 Froyer, G., 35 Ma, G.Q., 165 Schott, M., 35 Zayed, H.A., 128 Mackenzie, J.D., 154 Schultze, J.W., 82 Zhang, F.W., 46 Gicquel, A., 3 Makowiecki, D.M., 101 Shantha Kumar, B., | Zhang, W.Y., 165 Gutberlet, T., 143 Mao, B., 150 Shishen, X., 147 Zhang, Y., 150 Matsuo, Y., 133 Show, Y., 50 Zheng, Y., 46 Harker, A.H., 106 Meriacre, V., 143 Siu, G.G., 147 Zhivkov, I., 31 Hatanaka, Y., 113 Michaelis, A., 82 Spassova, E., 31 Zhu, J.S., 165 Hirokawa, K., 18 Missana, T., 76 St-Onge, L., 3 Zubareva, V., 143 Elsevier Science S.A. Thin Solid Films 274 (1996) 170-172 Subject Index of Volume 274 Adsorption Diamond anomalous temperature dependence of electrical resistivity in influence of process parameters on diamond film CVD in a surface- Pbo gSNo 2Te thin films, 55 wave driven microwave plasma reactor, 3 Alkylsilanes structural characterization of CVD diamond films using the ESR SiC thin film preparation by ArF excimer laser chemical vapor deposi- method, 50 tion. Part 1: Rate of photolysis of alkylsilanes by ArF excimer laser oriented and textured growth of (111) diamond on silicon using hot and their decomposition products, 70 filament chemical vapour deposition, 160 Alloys performance of laser-consolidated plasma-spray coatings on Fe— Elastic properties 28Mn-7A1-IC alloy, 95 film edge-induced stress in substrates and finite films, 106 mixed-sputter deposition of Ni-Ti—Cu shape memory films, 101 Electrical properties and measurements Anisotropy comment on: ‘‘Correlation between the optical and electrical proper- anisotropy micro-ellipsometry for in-situ determination of optical and ties of CdO thin films deposited by spray pyrolysis’’, | crystallographic properties of anisotropic solids and layers with Ti/ anomalous temperature dependence of electrical resistivity in TiO, as an example, 82 Pbp gSno Te thin films, 55 Antimony Electron diffraction epitaxial effects on film growth and interdiffusion at Bi—Sb interfaces, optical properties of AgBiSe, thin films, 128 76 Electron spin resonance structural characterization of CVD diamond films using the ESR Band structure method, 50 internal photoemission and photoconduction on GeO,/Ge films, 133 Ellipsometry Bismuth anisotropy micro-ellipsometry for in-situ determination of optical and epitaxial effects on film growth and interdiffusion at Bi—Sb interfaces, crystallographic properties of anisotropic solids and layers with Ti/ 76 TiO, as an example, 82 Epitaxy Cadmium X-ray double crystal and X-ray topographic characterization of silicon comment on: ‘‘Correlation between the optical and electrical proper- carbide thin films on silicon, titanium carbide, 6H-silicon carbide, ties of CdO thin films deposited by spray pyrolysis’’, 1 and aluminum nitride/sapphire substrates, 23 Cadmium telluride growth of ZnTe films by ionized cluster beam epitaxy at low tempera- effect of deposition parameters on the optical absorption in thermally ture, 46 evaporated cadmium telluride thin films, 120 oriented and textured growth of (111) diamond on silicon using hot Carbon filament chemical vapour deposition, 160 surface-enhanced Raman spectroscopy of monolayer C,,. Langmuir— Etching Blodgett films, 147 reactive ion etching of vapor phase deposited polyimide films in CF,/ Chemical vapour deposition O,: effect on surface morphology, 31 influence of process parameters on diamond film CVD in a surface- Evaporation wave driven microwave plasma reactor, 3 effect of deposition parameters on the optical absorption in thermally structural characterization of CVD diamond films using the ESR evaporated cadmium telluride thin films, 120 method, 50 optical properties of AgBiSe, thin films, 128 oriented and textured growth of (111) diamond on silicon using hot filament chemical vapour deposition, 160 Fourier transform infrared spectroscopy Clusters change of molecular orientation with post-polymerization of a thin film growth of ZnTe films by ionized cluster beam epitaxy at low tempera- of N-methylolacrylamide prepared with VDP, 66 ture, 46 Computer simulation film edge-induced stress in substrates and finite films, 106 Germanium internal photoemission and photoconduction on GeO,/Ge films, 133 Deposition process Glow discharge structural studies of parasexipheny] thin films: importance of the depo- properties of heavily phosphorous-doped yc-Si deposited by mesh sition parameters, 35 attached cathode-type r.f. glow discharge, 113 effect of deposition parameters on the optical absorption in thermally Growth mechanism evaporated cadmium telluride thin films, 120 optical properties of AgBiSe, thin films, 128 Elsevier Science S.A. Subject Index of Volume 274 / Thin Solid Films 274 (1996) 170-172 171 High energy electron diffraction structural studies of parasexipheny] thin films: importance of the depo- a novel Ba—Cu—O compound synthesized by pulsed laser deposition, sition parameters, 35 138 preparation and structure of ordered films of iron carboxylate com- plexes, 143 STM observations of a self-assembled structure of stearic acid Lang- Interfaces muir—Blodgett films with molecular resolution, 150 epitaxial effects on film growth and interdiffusion at Bi—Sb interfaces, thickness and microstructure effects on alcohol sensing of tin oxide 76 thin films, 154 lon implantation Oxidation formation of Fe—N films containing Fe,,N,2 phase by ion beam assisted a novel Ba—Cu—O compound synthesized by pulsed laser deposition, deposition, 63 138 IR absorption spectra SiC thin film preparation by ArF excimer laser chemical vapor deposi- Phosphorous tion. Part 1: Rate of photolysis of alkylsilanes by ArF excimer laser properties of heavily phosphorous-doped jc-Si deposited by mesh and their decomposition products, 70 attached cathode-type r.f. glow discharge, 113 Photoconductivity Langmuir-Blodgett films internal photoemission and photoconduction on GeO,/Ge films, 133 preparation and structure of ordered films of iron carboxylate com- Photolysis plexes, 143 SiC thin film preparation by ArF excimer laser chemical vapor deposi- surface-enhanced Raman spectroscopy of monolayer C,,. Langmuir— tion. Part 1: Rate of photolysis of alkylsilanes by ArF excimer laser Blodgett films, 147 and their decomposition products, 70 STM observations of a self-assembled structure of stearic acid Lang- Physical vapour deposition muir—Blodgett films with molecular resolution, 150 change of molecular orientation with post-polymerization of a thin film Laser ablation of N-methylolacrylamide prepared with VDP, 66 a novel Ba—Cu—O compound synthesized by pulsed laser deposition, Plasma processing and deposition 138 influence of process parameters on diamond film CVD in a surface- Laser irradiation wave driven microwave plasma reactor, 3 SiC thin film preparation by ArF excimer laser chemical vapor deposi- formation of Fe—N films containing Fe,,N. phase by ion beam assisted tion. Part 1: Rate of photolysis of alkylsilanes by ArF excimer laser deposition, 63 and their decomposition products, 70 performance of laser-consolidated plasma-spray coatings on Fe— epitaxial effects on film growth and interdiffusion at Bi—Sb interfaces, 28Mn-7A1-IC alloy, 95 76 Polymers performance of laser-consolidated plasma-spray coatings on Fe— structural studies of parasexipheny] thin films: importance of the depo- 28Mn-7A1-IC alloy, 95 sition parameters, 35 Lead telluride change of molecular orientation with post-polymerization of a thin film anomalous temperature dependence of electrical resistivity in of N-methylolacrylamide prepared with VDP, 66 Pbp gSny Te thin films, 55 Pyrolysis comment on: ‘‘Correlation between the optical and electrical properties of CdO thin films deposited by spray pyrolysis’’, 1 Magnesium formation of Fe—N films containing Fe,,N,. phase by ion beam assisted Raman scattering deposition, 63 surface-enhanced Raman spectroscopy of monolayer C,,. Langmuir— Metal-oxide semiconductor structure Blodgett films, 147 internal photoemission and photoconduction on GeO,/Ge films, 133 Reflection spectroscopy change of molecular orientation with post-polymerization of a thin film Nitrides of N-methylolacrylamide prepared with VDP, 66 formation of Fe—N films containing Fe,,N,> phase by ion beam assisted Resistivity deposition, 63 anomalous temperature dependence of electrical resistivity in Nucleation Pbp gSNo 2Te thin films, 55 oriented and textured growth of (111) diamond on silicon using hot Scanning tunnelling microscopy filament chemical vapour deposition, 160 STM observations of a self-assembled structure of stearic acid Lang- muir—Blodgett films with molecular resolution, 150 Optical properties Semiconductors comment on: ‘‘Correlation between the optical and electrical proper- film edge-induced stress in substrates and finite films, 106 ties of CdO thin films deposited by spray pyrolysis’’, 1 Sensors effect of deposition parameters on the optical absorption in thermally thickness and microstructure effects on alcohol sensing of tin oxide evaporated cadmium telluride thin films, 120 thin films, 154 optical properties of AgBiSe, thin films, 128 SiC films the energy gap of r.f.-sputtered BaTiO, thin films with different grain SiC thin film preparation by ArF excimer laser chemical vapor deposi- size, 165 tion. Part 1: Rate of photolysis of alkylsilanes by ArF excimer laser Optical spectroscopy and their decomposition products, 70 structural studies of parasexipheny] thin films: importance of the depo- Silicon sition parameters, 35 properties of heavily phosphorous-doped juc-Si deposited by mesh the energy gap of r.f.-sputtered BaTiO, thin films with different grain attached cathode-type r.f. glow discharge, 113 size, 165 Silicon carbide Organic substances X-ray double crystal and X-ray topographic characterization of silicon reactive ion etching of vapor phase deposited polyimide films in CF,/ carbide thin films on silicon, titanium carbide, 6H-silicon carbide, O,: effect on surface morphology, 31 and aluminum nitride/ sapphire substrates, 23 172 Subject Index of Volume 274 / Thin Solid Films 274 (1996) 170-172 Silver Surface structure STM observations of a self-assembled structure of stearic acid Lang- glancing-incidence and glancing-takeoff X-ray fluorescence analysis of muir—Blodgett films with molecular resolution, 150 a Mn ultrathin film on an Au layer, 18 Sputtering mixed-sputter deposition of Ni-Ti-Cu shape memory films, 101 Tin oxide the energy gap of r.f.-sputtered BaTiO, thin films with different grain thickness and microstructure effects on alcohol sensing of tin oxide size, 165 thin films, 154 Stress Titanium mixed-sputter deposition of Ni-Ti—Cu shape memory films, 101 anisotropy micro-ellipsometry for in-situ determination of optical and film edge-induced stress in substrates and finite films, 106 crystallographic properties of anisotropic solids and layers with Ti/ Structural properties TiO, as an example, 82 X-ray double crystal and X-ray topographic characterization of silicon Titanium oxide carbide thin films on silicon, titanium carbide, 6H-silicon carbide, anisotropy micro-ellipsometry for in-situ determination of optical and and aluminum nitride/sapphire substrates, 23 crystallographic properties of anisotropic solids and layers with Ti/ structural studies of parasexipheny] thin films: importance of the depo- TiO, as an example, 82 sition parameters, 35 the energy gap of r.f.-sputtered BaTiO, thin films with different grain properties of heavily phosphorous-doped jc-Si deposited by mesh size, 165 attached cathode-type r.f. glow discharge, 113 Transmission electron microscopy preparation and structure of ordered films of iron carboxylate com- mixed-sputter deposition of Ni-Ti-Cu shape memory films, 101 plexes, 143 Superconductivity X-ray diffraction a novel Ba—Cu—O compound synthesized by pulsed laser deposition, X-ray double crystal and X-ray topographic characterization of silicon 138 carbide thin films on silicon, titanium carbide, 6H-silicor. carbide, Surface and interface states and aluminum nitride/sapphire substrates, 23 glancing-incidence and glancing-takeoff X-ray fluorescence analysis of structural studies of parasexipheny] thin films: importance of the depo- a Mn ultrathin film on an Au layer, 18 sition parameters, 35 surface-enhanced Raman spectroscopy of monolayer C,,. Langmuir— preparation and structure of ordered films of iron carboxylate com- Blodgett films, 147 plexes, 143 Surface conductivity X-ray emission structural characterization of CVD diamond films using the ESR glancing-incidence and glancing-takeoff X-ray fluorescence analysis of method, 50 a Mn ultrathin film on an Au layer, 18 Surface melting X-ray total reflection analysis performance of laser-consolidated plasma-spray coatings on Fe— glancing-incidence and glancing-takeoff X-ray fluorescence analysis of 28Mn-7A1-IC alloy, 95 a Mn ultrathin film on an Au layer, 18 Surface morphology reactive ion etching of vapor phase deposited polyimide films in CF,/ O,: effect on surface morphology, 31 Zinc Surface stress growth of ZnTe films by ionized cluster beam epitaxy at low tempera- film edge-induced stress in substrates and finite films, 106 ture, 46