Table Of Content

ELSEVIER Thin Solid Films 269 (1995) 121 Author Index of Volume 269 Ahuja, R., 29 Gruszecki, T., 14 Liao, K.-J., 108 Shim, J.-Y., 102 Ashour, A., 112, 117 Gutiérrez, M.T., 80 Liu, B.X., 47 Siqueiros, J.M., 1 Liu, Z.-G., 18 Sugano, T., 41 Baik, H.-K., 102 Hampden-Smith, M.J., 51 Sun, H.-T., 97 Banerjee, R., 29 Hanajiri, T., 41 Machorro, R., 1 Sun, L., 18 Bates, J.B., 6 Herrero, J., 80 Mahmoud, S.A., 112, 117 Swaminathan, S., 29 Bliznyuk, V.N., 90 Martinez, M.A., 80 Holmstrém, B., 14 Hsu, D.S.Y., 21 Matsumoto, Y., 41 Takano, I., 36 Cantalini, C., 97 Miaoulis, I.N., 64 Tao, K., 47 Carlsson, P., 14 Ming, N.-B., 18 Troilo, L.M., 21 Chen, J.-X., 18 Isobe, S., 36 Miyake, K., 36 Turner, N.H., 21 Chen, X.-Y., 18 Tuyen, Le.T.T., 41 Chen, Y.-F., 18 Jain, A., 51 Nakaaki, L., 69 Chi, E.-J., 102 Nakamura, S., 69 Wang, G., 57 Cockeram, B., 57 Nicolini,C. , 85 Wang, S., 1 Katoda, T., 41 Wang, W.-L., 108 Kim, H.-G., 75 Du, Y., 47 Pan, F., 47 Wong, P.Y., 64 Kim, Y.-M., 75 Pelino, M., 97 El-Kadry,N. , 112, 117 Kirilyuk, A.P., 90 Pierson, K.W., 21 Yamaguchi, T., 69 Eriksson, S., 14 Kodas, T.T., 51 Yoshioka, S., 69 Erokhin, V., 85 Kwak, B.S., 6 Radicchi, G., 85 Yu, T., 18 Kwak, J.-S., 102 Rosenberg, S.E., 64 Facci, P., 85 Zhang, Z.-G., 108 Faccio, M., 97 Lee, S.-M., 102 Saito, N., 69 Zhu, Y.-Y., 18 Fraser, H.L., 29 Lee, W.-J., 75 Sasase, M., 36 Zuhr, R.A., 6 Elsevier Science S.A. ELSEVIER Thin Solid Films 269 (1995) 122-124 Subject Index of Volume 269 Aluminium Deposition process resistivity of titanium—aluminum multilayered thin films, 29 deposition of organic-inorganic composite thin films by Li,PO, Aluminium nitride sputtering and C,H, plasma polymerization, 6 interface reactions of an Ag/Cr/AIN sandwich during annealing electrochemically deposited polycrystalline n-CdSe thin films between 250 and 650 °C, 47 studied with laterally resolved photoelectrochemistry and Amorphization SEM, 14 formation of amorphous and crystalline phases, and phase on the electrical and optical properties of CdS films thermally transition by solid-state reaction in Zr/Si multilayer thin deposited by a modified source, 117 films, 102 Diamond Annealing cathodoluminescence and positron annihilation of defects in interface reactions of an Ag/Cr/AIN sandwich during annealing diamond films formed by d.c. plasma CVD, 108 between 250 and 650 °C, 47 Dielectrics Pt-base electrodes and effects on phase formations and electrical properties of high-dielectric thin films, 75 Diffusion the influence of multi-layered kinetics on the selection of the Cadmium selenide primary phase during the diffusion-controlled growth of electrochemically deposited polycrystalline n-CdSe thin films titanium-silicide layers, 57 studied with laterally resolved photoelectrochemistry and SEM, 14 Electrical properties and measurements Cadmium sulphide electrical and optical properties of phosphorous nitride films on the electrical and optical properties of CdS films thermally formed on InP substrates with photon-assisted chemical deposited by a modified source, 117 vapour deposition, 41 Cadmium telluride Pt-base electrodes and effects on phase formations and structural dependence of d.c. electrical properties of physically electrical properties of high-dielectric thin films, 75 deposited CdTe thin films, 112 structural dependence of d.c. electrical properties of physically Capacitors deposited CdTe thin films, 112 structural dependence of d.c. electrical properties of physically Electrochemistry deposited CdTe thin films, 112 electrochemically deposited polycrystalline n-CdSe thin films Catalysis studied with laterally resolved photoelectrochemistry and photocurrent performance of TiO, films prepared by Ar* ion SEM, 14 beam-assisted reactive deposition method, 36 Ellipsometry Chemical vapour deposition optical properties of Mg, from UV to IR, using ellipsometry preparation and characterization of PbTiO, thin films by me- and reflectometry, 1 talorganic chemical vapor deposition on a Lag<Srp;CoO; Etching metallic oxide electrode, 18 thermal dry-etching of copper using hydrogen peroxide and selective area platinum silicide film deposition using a hexafluoroacetylacetone, 51 molecular precursor chemical beam source, 21 Ethylene cathodoluminescence and positron annihilation of defects in deposition of organic-inorganic composite thin films by Li,PO, diamond films formed by d.c. plasma CVD, 108 sputtering and C,H, plasma polymerization, 6 Chromium Evaporation interface reactions of an Ag/Cr/AIN sandwich during annealing structural dependence of d.c. electrical properties of physically between 250 and 650 °C, 47 deposited CdTe thin films, 112 Conductivity influence of deposition conditions on the properties of Fluorescence a-GeC:H and a-Ge:H films prepared by r.f. magnetron on the mobility of Immunoglobulines G in Langmuir—Blodgett sputtering, 69 films, 85 Copper thermal dry-etching of copper using hydrogen peroxide and Germanium hexafluoroacetylacetone, 51 a theoretical study of the effect of thermal annealing on Crystallization curvature changes in multilayered structures, 64 formation of amorphous and crystalline phases, and phase influence of deposition conditions on the properties of transition by solid-state reaction in Zr/Si multilayer thin a-GeC:H and a-Ge:H films prepared by r.f. magnetron films, 102 sputtering, 69 Elsevier Science S.A. Subject Index of Volume 269 Growth mechanism Optical properties the influence of multi-layered kinetics on the selection of the optical properties of Mg, from UV to IR, using ellipsometry primary phase during the diffusion-controlled growth of and reflectometry, 1 titanium-silicide layers, 57 electrical and optical properties of phosphorous nitride films formed on InP substrates with photon-assisted chemical vapour deposition, 41 Heat treatment influence of deposition conditions on the properties of a theoretical study of the effect of thermal annealing on a-GeC:H and a-Ge:H films prepared by r.f. magnetron curvature changes in multilayered structures, 64 sputtering, 69 Heterostructures on the electrical and optical properties of CdS films thermally preparation and characterization of PbTiO, thin films by me- deposited by a modified source, 117 talorganic chemical vapor deposition on a La, <Srp,CoO, Optical spectroscopy metallic oxide electrode, 18 optical properties of Mg, from UV to IR, using ellipsometry and reflectometry, 1 Oxidation Indium oxide thermal dry-etching of copper using hydrogen peroxide and optimisation of indium tin oxide thin films for photovoltaic hexafluoroacetylacetone, 51 applications, 80 Oxides Indium phosphide preparation and characterization of PbTiO, thin films by me- electrical and optical properties of phosphorous nitride films talorganic chemical vapor deposition on a Lay ;Sr_,<CoO, formed on InP substrates with photon-assisted chemical metallic oxide electrode, 18 vapour deposition, 41 Interfaces interface reactions of an Ag/Cr/AIN sandwich during annealing Phase transitions between 250 and 650 °C, 47 formation of amorphous and crystalline phases, and phase lon bombardment transition by solid-state reaction in Zr/Si multilayer thin photocurrent performance of TiO, films prepared by Ar®* ion films, 102 beam-assisted reactive deposition method, 36 Photoconductivity Iron oxide photocurrent performance of TiO, films prepared by Ar* ion NO, gas sensitivity of sol-gel-derived a-Fe,O, thin films, 97 beam-assisted reactive deposition method, 36 Piezoelectric effect preparation and characterization of PbTiO, thin films by me- Langmuir-Blodgett films talorganic chemical vapor deposition on a Lao <Sr_<.<CoO, on the mobility of Immunoglobulines G in Langmuir—Blodgett metallic oxide electrode, 18 films, 85 Platinum highly asymmetric differential X-ray reflectometry of multilayer selective area platinum silicide film deposition using a films, 90 molecular precursor chemical beam source, 21 Luminescence Pt-base electrodes and effects on phase formations and cathodoluminescence and positron annihilation of defects in electrical properties of high-dielectric thin films, 75 diamond films formed by d.c. plasma CVD, 108 Polymers deposition of organic-inorganic composite thin films by Li,PO, sputtering and C,H, plasma polymerization, 6 Magnesium Positron spectroscopy optical properties of Mg, from UV to IR, using ellipsometry cathodoluminescence and positron annihilation of defects in and reflectometry, 1 diamond films formed by d.c. plasma CVD, 108 Metallization thermal dry-etching of copper using hydrogen peroxide and hexafluoroacetylacetone, 51 Resistivity Multilayers resistivity of titanium—aluminum multilayered thin films, 29 resistivity of titanium—aluminum multilayered thin films, 29 on the electrical and optical properties of CdS films thermally the influence of multi-layered kinetics on the selection of the deposited by a modified source, 117 primary phase during the diffusion-controlled growth of titanium-silicide layers, 57 on the mobility of Immunoglobulines G in Langmuir—Blodgett Scanning electron microscopy films, 85 electrochemically deposited polycrystalline n-CdSe thin films highly asymmetric differential X-ray reflectometry of multilayer studied with laterally resolved photoelectrochemistry and films, 90 SEM, 14 Semiconductors optimisation of indium tin oxide thin films for photovoltaic Nitrides applications, 80 electrical and optical properties of phosphorous nitride films Sensors formed on InP substrates with photon-assisted chemical NO, gas sensitivity of sol-gel-derived a-Fe,O, thin films, 97 vapour deposition, 41 Silicides Nitrogen dioxide selective area platinum silicide film deposition using a NO, gas sensitivity of sol-gel-derived a-Fe,O, thin films, 97 molecular precursor chemical beam source, 21 Nucleation formation of amorphous and crystalline phases, and phase selective area platinum silicide film deposition using a transition by solid-state reaction in Zr/Si multilayer thin molecular precursor chemical beam source, 21 films, 102 124 Subject Index of Volume 269 Silicon Titanium a theoretical study of the effect of thermal annealing on resistivity of titanium—aluminum multilayered thin films, curvature changes in multilayered structures, 64 29 Silver Titanium oxide interface reactions of an Ag/Cr/AIN sandwich during annealing photocurrent performance of TiO, films prepared by Ar* ion between 250 and 650 °C, 47 beam-assisted reactive deposition method, 36 Solar cells Titanium silicide optimisation of indium tin oxide thin films for photovoltaic the influence of multi-layered kinetics on the selection of the applications, 80 primary phase during the diffusion-controlled growth of Sputtering titanium-silicide layers, 57 deposition of organic-inorganic composite thin films by Li,PO, sputtering and C,H, plasma polymerization, 6 influence of deposition conditions on the properties of a-GeC:H and a-Ge:H films prepared by r.f. magnetron sputtering, 69 X-ray diffraction optimisation of indium tin oxide thin films for photovoltaic highly asymmetric differential X-ray reflectometry of multilayer applications, 80 films, 90 Stress X-ray total reflection analysis a theoretical study of the effect of thermal annealing on highly asymmetric differential X-ray reflectometry of multilayer curvature changes in multilayered structures, 64 films, 90 n e v i P # o7 > oN 5