Table Of Content

Thin Solid Films, 225 (1993) 299-300 Author Index of Volume 225 Ailey-Trent, K. S., 244 Horiike, Y., 124 Nakamoto, I., 120 Antson, J., 296 Howe, D., 64 Namba, S., 120 Aoyagi, Y., 40, 120, 136, 240 Hsieh, K. C., 64 Niinist6, L., 130, 288 Aspnes, D. E., 26 Hukka, T. I., 155, 212 Nishi, K., 47 Nishizawa, J.-I., 1 Banerjee, S., 177 Iguchi, A., 78 Norris, P. E., 105 Bansenauer, B. A., 17 lizuka, T., 168 Nykanen, E., 288 Beach, D. B., 173 Ikeda, H., 82 Bedair, S. M., 59, 99, 109, 183 Imai, S., 168 Obitsu, T., 82 Bhat, I. B., 261 Irby, J., 177 Oda, S., 284 Bhat, R., 26 Ishii, M., 136 Ohsawa, F., 82 Bramblett, T. R., 191 Ishizaki, M., 74 Oyama, Y., | Brasil, M. J. S., 26 Iwai, S., 40 Ozasa, K., 40 Brierley, S., 64 Iyer, S. S., 163 Pan, N., 64 Carter, J., 64 Juza, P., 265, 270 Pesek, A., 265, 270 Chen, P. J., 140, 196 Picraux, T., 177 Kajimoto, A., 70 Chen, Q., 115 Powell, A. R., 163 Kamiya, I., 26 Chen, Y. C., 284 Pudensi, M. A. A., 26 Kano, N., 74 Cheng, C. C., 140, 150, 196 Karam, N. H., 261 Choi, S.-D., 235 Qian, R., 177 Kattelus, H., 296 Choyke, W. J., 140, 150, 196 Quinn, W. E., 26 Kawai, M., 240 Clemen, L., 196, Kawai, T., 275 Cohen, S. M., 155 Randall, J. N., 99 Kawanishi, H., 82 Colaianni, M. L., 150, 196 Rawles, R. E., 212 Kawasaki, K., 120 Colter, P. C., 99, 109, 183 Reid, K. G., 59 Kawasaki, T., 124 Creighton, J. R., 17 Ritala, M., 288 Kern, R. S., 219 Rowland, L. B., 219 Kim, K., 235 Dapkus, P. D., 12, 115 Kinosky, D., 177 Davis, R. F., 219, 244 Saarilahti, J., 296 Kobayashi, N., 32 Dip, A., 99, 109 Sakai, K., 284 Kobayashi, Y., 32 Sakaki, H., 47 Kodama, K., 136 D’Evelyn, M. P., 155, 203, 212 Sakaue, H., 124 Koleske, D. D., 160, 173 Eberl, K., 163 Sakuma, E., 240 Konagai, M., 256 Ehsani, H., 261 Sakuraba, H., | Kreinin, O., 91 Ek, B. A., 163 Salzman, J., 91 Kukimoto, H., 74 El-Masry, N. A., 59 Schwarz, S. A., 26 Kupferberg, L., 64 Eldallal, G. M., 99, 109 Seabaugh, A. C., 99 Sedgwick, T. O., 163 Lakomaa, E.-L., 280 Faschinger, W., 250, 265, 270 Lapiano-Smith, D. A., 187 Shingubara, S., 124 Ferreira, S., 270 Shinmura, K., 120 Leskela, M., 130, 288 Florez, L. T., 26 Simko, J. P., 40 Lindfors, S., 296 Fujii, K., 284 Sitar, Z., 244 Lischka, K., 265, 270 Fujita, H., 82 Sitter, H., 250, 265, 270 Liu, H., 105 Fuyuki, T., 225 Soininen, P., 288 Lubben, D., 191 Struck, L. M., 203 Luscombe, J. H., 99 Gamo, K., 120, Sugano, T., 40 Gao, Q., 140, 150 Maa, B. Y., 12 Sugiura, O., 168 Gates, S. M., 160, 173 Maayan, E., 91 Sumakeris, J. J., 219, 244 Ghandhi, S. K., 261 Mahajan, A., 177 Suntola, T., 96, 280 Goldman, L., 64 Matsumura, M., 168 Sutcu, L. F., 203 Greene, J. E., 191 Matsunami, H., 70, 225 Gregory, S., 26 McFeely, F. R., 187 Tabata, H., 275 Griitzmacher, D. A., 163 McIntosh, F. G., 183 Takahashi, K., 256 Gutleben, H., 196 Meguro, T., 40, 136, 240 Takemura, Y., 256 Misawa, S., 240 Tamargo, M., 26 Hara, S., 240 More, K. L., 244 Tanaka, H., 26 Harbison, J. P., 26 Myers, A. F., 59 Tanaka, S., 219 Haukka, S., 280 Tasch, A., 177 Hauzenberger, F., 265 Nagasawa, H., 230 Taylor, P. A., 196 Hein, S., 64 Nahory, R. E., 26 Tempelhoff, K., 86 300 Thomas, S., 177 Yamaga, S., 78 Yoshikawa, A., 78 Tsu, R., 191 Yamaguchi, Y., 230 Yoshimoto, M., 70 Yamamoto, J., 124 Yoshino, J., 74 Yamamoto, Y., 136 Yoshinobi, T., 225 Usui, A., 47, 53 Yamasaki, K., 256 Ya; REL. 7 Yang, Y. L., 155, 203 Wallace, R. M., 196 Yates, Jr, J. T., 140, 150, 196 Zajicek, H., 270 Wang, K. L., 235 Ylilammi, M., 296 Zama, H., 284 Weinberg, W. H., Yoder, M. N., 145 Zawadzki, P. A., 105 Wolfson, R. G., 2 Yoshida, S., 240 Thin Solid Films, 225 (1993) 301-304 Subject Index of Volume 225 Aluminium arsenide Diamond atomic layer epitaxy of AlAs and Al, Ga, _ , As for device chemistry of hydrogen on diamond (100), 203 application, 109 novel method for chemical vapor deposition and atomic layer atomic layer epitaxy of AlAs and (AIAs),,(GaAs),,, 74 epitaxy using radical chemistry, 212 Aluminium oxide Diffusion layered tantalum—aluminum oxide films deposited by atomic conditions for light-induced short-time growth of GaAs and layer epitaxy, 296 InP by chloride epitaxy, 86 Arsenic atomic layer doping for Si, 163 Electron energy loss spectroscopy Atomic beam studies comparison of Cl, and HCl adsorption on Si(100) —(2 x 1), atomic H: a reagent for the extraction of chemical species 140 from Si surfaces, 150 Si,H, adsorption and dissociation pathways on Ge(001)2 x 1: atomic layer epitaxy of Si using atomic H, 168 mechanisms for heterogeneous atomic layer epitaxy, 191 group IV atomic layer epitaxy, 145 Electronic devices Auger electron spectroscopy Si heterojunction diodes with a thin B-SiC layer prepared with comparison of Cl, and HCI adsorption on Si(100) —(2 x 1), gas layer source molecular beam epitaxy, 235 140 Epitaxy microscopic mechanisms of accurate layer-by-layer growth of self-limiting growth on zinc chalcogenides and their B-SiC, 240 superlattices, 256 Etching atomic layer manipulation of III-V compounds, 120 digital etching study and fabrication of fine Si lines and dots, Cadmium selenide 124 self-limiting monolayer epitaxy of wide gap II-VI superlattices, dopants on Si(100) surfaces: useful probes of silicon atomic 270 layer epitaxy?, 160 Cadmium sulphide surface processes in digital etching of GaAs, 136 cost-effective processing by atomic layer epitaxy, 96 Cadmium telluride Fourier transform infrared spectroscopy growth and characterization of CdTe, HgTe and HgCdTe by analytical and chemical techniques in the study of surface atomic layer epitaxy, 261 species in atomic layer epitaxy, 280 growth and characterization of CdTe—ZnTe short-period superlattices, 265 Gallium arsenide ultra high vacuum atomic layer epitaxy of CdTe, 250 atomic layer epitaxy for resonant tunneling devices, 99 Carbon atomic layer manipulation of III-V compounds, 120 atomic layer epitaxy of AlAs and (AIAs),,(GaAs),;, 74 conditions for light-induced short-time growth of GaAs and group IV atomic layer epitaxy, 145 InP by chloride epitaxy, 86 Catalysis GaAs/AlGaAs atomic layer epitaxy in a commercial MOCVD analytical and chemical techniques in the study of surface reactor, 105 species in atomic layer epitaxy, 280 growth and characterization of device quality GaAs produced Chemical beam epitaxy by laser-assisted atomic layer epitaxy using triethylgallium, laser-assisted atomic layer epitaxy of GaP in chemical beam 115 epitaxy, 70 in situ monitoring and control of atomic layer epitaxy by Chemical vapour deposition surface photo-absorption, 32 atomic layer doping for Si, 163 in situ optical characterization of GaAs and InP surfaces atomic layer epitaxy for resonant tunneling devices, 99 during chloride atomic layer epitaxy, 47 atomic layer epitaxy of 3C-—SiC by low pressure vapour molecular layer epitaxy of GaAs, | deposition with alternating gas supply, 230 real-time optical diagnostics for measuring and controlling atomic layer epitaxy of AlAs and Al, Ga, _, As for device epitaxial growth, 26 application, 109 study of photocatalytic growth-rate enhancement in MOMBE GaAs/AlGaAs atomic layer epitaxy in a commercial MOCVD of GaAs on ZnSe by surface photoabsorption, 78 reactor, 105 study of self-limiting growth mechanism in chloride ALE, 53 growth and characterization of CdTe, HgTe and HgCdTe by study of surface reactions in atomic layer epitaxy of GaAs atomic layer epitaxy, 261 using trimethylgallium by reflectance difference silicon monolayer growth using dichlorosilane and hydrogen in spectroscopy and mass spectroscopy, 12 a near atmospheric pressure chemical vapor deposition surface chemistry and kinetics of GaAs atomic layer epitaxy, reactor, 183 17 wavelength dependence of photoenhanced organometallic surface photo-absorption study of the laser-assisted atomic chemical vapor deposition, 91 layer epitaxial growth process of GaAs, 40 Chemisorption surface processes in digital etching of GaAs, 136 novel method for chemical vapor deposition and atomic layer wavelength dependence of photoenhanced organometallic epitaxy using radical chemistry, 212 chemical vapor deposition, 91 302 Gallium nitride Low energy electron diffraction layer-by-layer epitaxial growth of GaN at low temperatures, hydrocarbon surface chemistry on Si(100), 196 244 microscopic mechanisms of accurate layer-by-layer growth of Gallium phosphide B-SiC, 240 laser-assisted atomic layer epitaxy of GaP in chemical beam Luminescence epitaxy, 70 determining lattice mismatch or the composition of a single Gallium selenide ultra thin GaInAs layer grown in InP, 82 impact of short exposure times on the ALE self-limiting process: potential mechanisms, 59 Germanium Mecury telluride chemisorption and reaction of GeCl, with Si( 100), 187 growth and characterization of CdTe, HgTe and HgCdTe by atomic layer epitaxy, 261 Metal-—organics High energy electron diffraction laser-assisted atomic layer epitaxy of GaP in chemical beam atomic layer control of the growth of oxide superconductors epitaxy, 70 using laser molecular beam epitaxy, 275 Molecular beam epitaxy atomic layer epitaxy controlled by surface superstructures in atomic layer control of the growth of oxide superconductors SiC, 225 using laser molecular beam epitaxy, 275 self-limiting adsorption and in situ optical monitoring for atomic layer epitaxy controlled by surface superstructures in atomic layer epitaxy of oxide superconductors, 284 SIC, 225 Si atomic layer epitaxy based on Si,H, and remote He plasma atomic layer epitaxy of Si using atomic H, 168 bombardment, 177 self-limiting growth on zinc chalcogenides and their Si,H, adsorption and dissociation pathways on Ge(001)2 x 1: superlattices, 256 mechanisms for heterogeneous atomic layer epitaxy, 191 Si heterojunction diodes with a thin B-SiC layer prepared with ultra high vacuum atomic layer epitaxy of CdTe, 250 gas layer source molecular beam epitaxy, 235 Hydrocarbons Molecular beam studies hydrocarbon surface chemistry on Si(100), 196 atomic H: a reagent for the extraction of chemical species from Si surfaces, 150 group IV atomic layer epitaxy, 145 Impurities Molybdenum potential Si atoniic layer epitaxy processes using halogenated group IV atomic layer epitaxy, 145 Si precursors, 173 Monolayers Indium arsenide atomic layer epitaxy for resonant tunneling devices, 99 in situ monitoring and control of atomic layer epitaxy by atomic layer epitaxy of 3C-—SiC by low pressure vapour surface photo-absorption, 32 deposition with alternating gas supply, 230 Indium phosphide atomic layer epitaxy of AlAs and Al, Ga, _ As for device atomic layer epitaxy of InP using trimethylindium and application, 109 tertiarybutylphosphine, 64 atomic layer epitaxy of AlAs and (AIAs),,(GaAs),,, 74 conditions for light-induced short-time growth of GaAs and atomic layer epitaxy of InP using trimethylindium and InP by chloride epitaxy, 86 tertiarybutylphosphine, 64 determining lattice mismatch or the composition of a single atomic layer epitaxy of Si using atomic H, 168 ultra thin GalInAs layer grown in InP, 82 atomic layer epitaxy: chemical opportunities and challenges, in situ monitoring and control of atomic layer epitaxy by 130 surface photo-absorption, 32 atomic layer manipulation of III-V compounds, 120 in situ optical characterization of GaAs and InP surfaces chemisorption and reaction of GeCl, with Si(100), 187 during chloride atomic layer epitaxy, 47 cost-effective processing by atomic layer epitaxy, 96 Infrared spectroscopy dopants on Si(100) surfaces: useful probes of silicon atomic chemistry of hydrogen on diamond (100), 203 layer epitaxy?, 160 lon bombardment GaAs/AlGaAs atomic layer epitaxy in a commercial MOCVD atomic layer manipulation of III-V compounds, 120 reactor, 105 digital etching study and fabrication of fine Si lines and dots, 124 group IV atomic layer epitaxy, 145 growth and characterization of CdTe, HgTe and HgCdTe by atomic layer epitaxy, 261 Laser ablation growth and characterization of device quality GaAs produced atomic layer control of the growth of oxide superconductors by laser-assisted atomic layer epitaxy using triethylgallium, using laser molecular beam epitaxy, 275 115 Laser irradiation impact of short exposure time on the ALE self-limiting growth and characterization of device quality GaAs produced process: potential mechanisms, 59 by laser-assisted atomic layer epitaxy using triethylgallium, layer-by-layer epitaxial growth of GaN at low temperatures, 115 244 study of photocatalytic growth-rate enhancement in MOMBE model for the atomic layer epitaxy of GaAs, 7 of GaAs on ZnSe by surface photoabsorption, 78 molecular layer epitaxy of GaAs, 1 surface photo-absorption study of the laser-assisted atomic potential Si atomic layer epitaxy processes using halogenated layer epitaxial growth process of GaAs, 40 Si precursors, 173 wavelength dependence of photoenhanced organometallic real-time optical diagnostics for measuring and controlling chemical vapor deposition, 91 epitaxial growth, 26 self-limiting monolayer epitaxy of wide gap II-VI superlattice, Rutherford backscattering spectroscopy 270 growth of titanium dioxide thin films by atomic layer epitaxy, Si atomic layer epitaxy based on Si,H, and remote He plasma 288 bombardment, 177 silicon monolayer growth using dichlorosilane and hydrogen in a near atmospheric pressure chemical vapor deposition Secondary ion mass spectrometry reactor, 183 growth and characterization of device quality GaAs produced study of photocatalytic growth-rate enhancement in MOMBE by laser-assisted atomic layer epitaxy using triethylgallium, of GaAs on ZnSe by surface photoabsorption, 78 115 study of self-limiting growth mechanism in chloride ALE, 53 Segregation study of surface reactions in atomic layer epitaxy of GaAs atomic layer doping for Si, 163 using trimethylgallium by reflectance difference Semiconductors spectroscopy and mass spectroscopy, 12 layer-by-layer growth of SiC at low temperatures, 219 surface processes in digital etching of GaAs, 136 Silicon surface chemistry and kinetics of GaAs atomic layer epitaxy, atomic H: a reagent for the extraction of chemical species 17 from Si surfaces, 150 ultra high vacuum atomic layer epitaxy of CdTe, 250 atomic layer doping for Si, 163 Multilayers atomic layer epitaxy of Si using atomic H, 168 atomic layer epitaxy: chemical opportunities and challenges, comparison of Cl, and HCI adsorption on Si(100) — (2 x 1), 130 140 layered tantalum—aluminum oxide films deposited by atomic digital etching study and fabrication of fine Si lines and dots, layer epitaxy, 296 124 dopants on Si(100) surfaces: useful probes of silicon atomic layer epitaxy?, 160 Nuclear magnetic resonance hydrocarbon surface chemistry on Si( 100), 196 analytical and chemical techniques in the study of surface Hydrogen~—halogen chemistry on semiconductor surfaces, 155 species in atomic layer epitaxy, 280 potential Si atomic layer epitaxy processes using halogenated Si precursors, 173 Oxides Si atomic layer epitaxy based on Si,H, and remote He plasma atomic layer control of the growth of oxide superconductors bombardment, 177 using laser molecular beam epitaxy, 275 Si,H, adsorption and dissociation pathways on Ge(001)2 x 1: atomic layer epitaxy: chemical opportunities and challenges, mechanisms for heterogeneous atomic layer epitaxy, 191 130 silicon monolayer growth using dichlorosilane and hydrogen in self-limiting adsorption and in situ optical monitoring for a near atmospheric pressure chemical vapor deposition atomic layer epitaxy of oxide superconductors, 284 reactor, 183 Silicon carbide Photo-processes atomic layer epitaxy controlled by surface superstructures in SiC, 225 laser-assisted atomic layer epitaxy of GaP in chemical beam epitaxy, 70 atomic layer epitaxy of 3C-—SiC by low pressure vapour Plasma processing and deposition deposition with alternating gas supply, 230 Si atomic layer epitaxy based on Si,H, and remote He plasma layer-by-layer growth of SiC at low temperatures, 219 bombardment, 177 microscopic mechanisms of accurate layer-by-layer growth of B-SiC, 240 Si heterojunction diodes with a thin B-SiC layer prepared with Quantum effects gas layer source molecular beam epitaxy, 235 atomic layer epitaxy for resonant tunneling devices, 99 Superconductivity atomic layer epitaxy of AlAs and Al, Ga,_ , As for device self-limiting adsorption and in situ optical monitoring for application, 109 atomic layer epitaxy of oxide superconductors, 284 determining lattice mismatch or the composition of a single Superlattices ultra thin GaInAs layer grown in InP, 82 atomic layer epitaxy of AlAs and (AIAs),,(GaAs),,, 74 growth and characterization of CdTe—ZnTe short-period Raman scattering superlattices, 265 novel method for chemical vapor deposition and atomic layer self-limiting growth on zinc chalcogenides and their epitaxy using radical chemistry, 212 superlattices, 256 Reflection spectroscopy self-limiting monolayer epitaxy of wide gap II-VI superlattices, in situ monitoring and control of atomic layer epitaxy by 270 surface photo-absorption, 32 Surface composition in situ optical characterization of GaAs and InP surfaces model for the atomic layer epitaxy of GaAs, 7 during chloride atomic layer epitaxy, 47 molecular layer epitaxy of GaAs, | real-time optical diagnostics for measuring and controlling silicon monolayer growth using dichlorosilane and hydrogen in epitaxial growth, 26 a near atmospheric pressure chemical vapor deposition study of surface reactions in atomic layer epitaxy of GaAs reactor, 183 using trimethylgallium by reflectance difference surface chemistry and kinetics of GaAs atomic layer epitaxy, spectroscopy and mass spectroscopy, 12 17 surface photo-absorption study of the laser-assisted atomic Surface energy layer epitaxial growth process of GaAs, 40 hydrogen—halogen chemistry on semiconductor surfaces, 155 304 Surface processes growth of titanium dioxide thin films by atomic layer epitaxy, laser-assisted atomic layer epitaxy of GaP in chemical beam 288 epitaxy, 70 Transmission electron microscopy layer-by-layer epitaxial growth of GaN at low temperatures, 244 Tantalum layered tantalum—aluminum oxide films deposited by atomic layer epitaxy, 296 X-Ray diffraction Thermal desorption determining lattice mismatch or the composition of a single atomic H: a reagent for the extraction of chemical species ultra thin GaInAs layer grown in InP, 82 from Si surfaces, 150 growth and characterization of CdTe—ZnTe short-period chemistry of hydrogen on diamond (100), 203 superlattices, 265 comparison of Cl, and HCI adsorption on Si(100) —(2 x 1), growth of titanium dioxide thin films by atomic layer epitaxy, 140 288 hydrocarbon surface chemistry on Si(100), 196 self-limiting monolayer epitaxy of wide gap II-VI superlattice, hydrogen—halogen chemistry on semiconductor surfaces, 155 270 impact of short exposure time on the ALE self-limiting X-Ray photoelectron spectroscopy process: potential mechanisms, 59 atomic layer epitaxy of InP using trimethylindium and model for the atomic layer epitaxy of GaAs, 7 tertiarybutylphosphine, 64 study of self-limiting growth mechanism in chloride ALE, 53 chemisorption and reaction of GeCl, with Si(100), 187 surface chemistry and kinetics of GaAs atomic layer epitaxy, 17 Zinc selenides Titanium oxide study of photocatalytic growth-rate enhancement in MOMBE cost-effective processing by atomic layer epitaxy, 96 of GaAs on ZnSe by surface photoabsorption, 78