Table Of Content

Thin Solid Films, 204 (1991) 487—489 487 Contents of Volume 204 Issue 1 Letters Optical properties and electron energy-loss diagnostics of vanadium dioxide thin films. ...... M. Thomas and E. Chain (Richardson, TX, U.S.A.) The influence of internal stress on the amorphous structure of wet-coated films derived from a a se lee a es ae Gute k ey a kw ew Be Re eR A. Kishimoto, H. Sugimoto, T. Nanba and T. Kudo (Tokyo, Japan) Electrical conductivity of 9,10-anthraquinonethinfilms ..........2..0.02.0.. .0 0.08 . A. Latef and J. C. Bernéde (Nantes, France) Solution precursor chemical vapor deposition of titanium oxide thinfilms .............. J.-P. Lu, J. Wang and R. Raj (Ithaca, NY, U.S.A.) Electronics and Optics Material figures of merit fornon-linearoptics ....0..0 .c.e ... A. G. Astill (Didcot, U.K.) The photoelectric properties of thin films of rare earth monophosphides ............... 19 J. Meng and Y. Ren (Changchun, China) Preparation and Characterization Sol—gel derived, air-baked indium and tin oxidefilms. ... 2... 20.0.0... 0006 pee eee eee 25 D. M. Mattox (Rolla, MO, U.S.A.) Material and electronic properties of boron-doped silicon films deposited from SiH,—BCI,—-N, mixtures in an industrial low pressure chemical vapour deposition furnace. ............. 33 D. Bielle- Daspet, E. Scheid, C. Azzaro, B.D e Mauduit and B. Pieraggi (Toulouse, France) The properties of diamond-like carbon films prepared byr.f.discharges................ 49 K. W. Whang and H. S. Tae (Seoul, South Korea) Amorphous hydrogenated silicon films produced by an expaneing argon-silane plasma investi- ae ee re ee ee ae 59 A. T. M. Wilbers, G. J. Meeusen, M. Haverlag, G. M. W. Ki>esen, D. C. Schram (Eindhoven, The Netherlands) and H. Kersten (Greifswald, F.R.G.) The preparation, properties and applications of silicon nitride thin films deposited by plasma- er so. 5 sk hve: a A ss FO we ee A es 77 M. Gupta, V. K. Rathi, R. Thangaraj, O. P. Agnihotri and K. S. Chari (New Delhi, India) Crystallization of thin antimony deposits on amorphouscarbon..................04.- 107 G. Fuchs, M. Treilleux, F. Santos Aires, P. Melinon, 8. Cabaud and A. Hoareau (Villeurbanne, France) A comparison of NF, and NH, as the nitrogen sources for AIN crystal growth by metalorganic ey CD oo. ks a 0 Sb ad a eek PE eS ER RO eee ee 115 J.H. Edgar, Z. J. Yu and B. S. Sywe (Manhattan, KS, U.S.A.) Electrochromic thin films deposited onto polyester substrates. ................0004 123 C. Rousselot (Besancon, France), P. A. Gillet (Le Mans, France) and O. Bohnke (Besancon, France) Deep level transient spectroscopy study of CaF,/GaAs(111) and SrF,/GaAs(111) structures ee eT PO ke ee eee eee eee Wee tee h birt Rees 133 S. Lanyi (Bratislava, Czechoslovakia), S. V. Novikov, N. S. Sokolov and N. L. Yakovlev (Leningrad, U.S.S.R.) 488 CONTENTS Electrochemical synthesis of semiconducting CdSe thin films Z. Loizos and N. Spyrellis (Athens, Greece) and G. Maurin (Paris, France) Crystalline TiB, coatings prepared by ion-beam-assisted deposition J.P. Riviére, PH. Guesdon, J. Delafond, M. F. Denanot (Poitiers, France), G. Farges and D. Degout (Arcueil, France) lon bombardment induced silicide formation during sputter depth profiling of Ta/Si multilayer thin film structure as studied by x-ray photoelectron spectroscopy and auger electron spectroscopy. . 163 B. R. Chakraborty and S. Hofmann (Stuttgart, F.R.G.) Langmuir-—Blodgett and Related Films A simulation for the transitional deposition of Langmuir—Blodgett films from Y to X type A. Momose and Y. Hirai (Saitamia, Japan) Condensed Matter Film Behaviour Anodic oxidation of copper indium diselenide thin films M. Z. Sardi and J. Vedel (Paris, France) Kinetic study of currentless dissolution of bismuth oxide film in aqueous solution containing electroactive species M. M. Hefny, A. S. Mogoda, S. A. Salih and H. E. El-Fiky (Giza, Egypt) Parameters that influence the barrier properties of metallized polyester and polypropylene films. . 203 J. Weiss (Freiburg, F.R.G.) Kinetics and crystallization studies by /n situ X-ray diffraction of the oxidation of chemically vapour deposited SiC F. Sibieude and J. Rodriguez (Font-Romeu, France) and M. T. Clavaguera-Mora (Bellaterra, Spain) Resputtering effects during magnetron sputtering of Y-Ba—Cu—O S. N. Ermolov, V. A. Marchenko, V. Z. Rosenflantz and A. G. Znamenski (Chernogolovka, U.S.S.R.) Issue 2 Electronics and Optics Interband dipole matrix elements of narrow band gap semiconductor films W. Okulski and M. Zatuzny (Lublin, Poland) Studies on electron transport properties and the Burstein—Moss shift in indium-doped ZnO films. 255 A. Sarkar, S. Ghosh, S. Chaudhuri and A. K. Pal (Calcutta, India) Surface oxidation effects on the electrical resistance of cermet thin films: X-ray photoelectron spectroscopy and Rutherford backscattering studies 265 A. D. Katnani, L. J. Matienzo and F. Emmi (Endicott, NY, U.S.A.) Metallurgical and Protective Layers Tribosynthesis of graphite—diamond films and its employment for obtaining structurally adaptive coatings L. |. Bershadsky (Kiev, U.S.S.R.), D. S. losebidze and E. R. Kutelia (Tbilisy, U.S.S.R.) Reactively ion plated TiN: effects of r.f. power density on the structure and electrochemical properties R. T. Carson, J. H. Givens, H. S. Savage, Y. W. Lee, J. M. Rigsbee (Urbana, IL, U.S.A.) and W. J. Croisant (Champaign, IL, U.S.A.) CONTENTS 489 Preparation and Characterization Stoichiometry and impurities in sputtered aluminafilmsoncopper.................. 297 P. Vuoristo, T. Mantyla, P. Kettunen (Tampere, Finland) and R. Lappalainen (Helsinki, Finland) Uniform thin chemically vapour deposited layers of high density on the inner surfaces of tube- Sco ae Sarl b le lal ye geass) ae Cee Rk REE se be eh aes A. Kwatera (Cracow, Poland) Electro-oxidation of propanol on a modified Ni—Ni,P, electrode in an alkaline environment. ... 341 A. Budniok and E. Koztowska (Katowice, Poland) R.f. planar magnetron sputtered ZnO films oe ag gh Sk gk ek ROR ple eo ake ee Ol BES ae 349 F.C. M. van de Pol, F. R. Blom and Th. J. A. Popma (Enschede, The Netherlands) R.f. planar magnetron sputtered ZnO films oo Sy kh veo ce bce IS ew a Ae ee ak we een ee 365 F. R. Blom, F. C. M. van de Pol, G. Bauhuis and Th. J. A. Popma (Enschede, The Netherlands) Microstructural characterization of Fe-Althinfilms............0.20.0.00.0. 0a 377 E. Bonetti (Bologna, Italy), S. Enzo (Venezia, Italy), G. Sberveglieri (Brescia, Italy), G. Valdre (Bologna, Italy) and S. Groppelli (Brescia, Italy) | Experimental studies of the light-induced effects in undoped hydrogenated amorphous silicon as a a le tk ee SR Aaa eta ole Gee 385 K. Zellama, H. Labidi, P. Germain, D. Lortigues, L. Chahed, M. L. Theye (Paris, France), U. Besi, U. Coscia, G. Fameli, P. Menna (Portici, Italy), P. Roca, |. Cabarrocas and C. Godet (Palaiseau, France) Electrochemical deposition and characterization of CdTe polycrystalline thinfilms ......... 397 S. Bonilla and E. A. Dalchiele (Montevideo, Uruguay) Anomalous incorporation of fluorine in tin oxide films produced with the pyrosol method.... . 405 J. Ferrén and R. Arce (Santa Fe, Argentina) X-ray photoelectron spectroscopy study of copper-containing amorphouscarbon......... 413 P. A. Chen (Lungtan, Taiwan) Langmuir-—Blodgett and Related Films A kinetic study of monomer and excimer fluorescence of pyrene lecithin in Langmuir—Blodgett SS. i-S be 5A ee aA ee A A ee ek ee aD ele EE Nee 417 H. Lemmetyinen, M. Ikonen and J. Mikkola (Helsinki, Finland) Fluorescence of pyrene intramolecular excimers in Langmuir—Blodgettfilms............. 441 N. Sadovskii, P. Shirov, M. Kuzmin (Moscow, U.S.S.R.), H. Lemmetyinen and M. Ikonen (Helsinki, Finland) Langmuir—Blodgett processing of poly(3,4-dibutoxythiophene) ................... 451 C. L. Callender, C. A. Carere (Ottawa, Ont., Canada), G. Daoust and M. Leclerc (Montreal, Que., Canada) Condensed Matter Film Behaviour Characteristics of metal chalcogenide solar control films with a protective polymer coating .... 459 A. M. Fernandez and P. K. Nair (Morelos, Mexico) High resolution studies of interfacial effects by small and large angle X-ray diffraction ........ 473 G. Gtadyszewski (Lublin, Poland) Ne ne ck i ee ee al le ag ote aa Uee ee ob 485