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Thin Solid Films 1991: Vol 203 Table of Contents PDF

3 Pages·1991·0.37 MB·English
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Thin Solid Films, 203 (1991) 375-377 Contents of Volume 203 Issue 1 Electronics and Optics Random resistor-capacitor network model of island metal films and three-dimensional metal— insulator composites P. Smilauer (Praha, Czechoslovakia) Optical properties of amorphous hydrogenated carbon layers deposited by an ion plating technique O. Stenzel, G. Schaarschmidt, F. Wolf, M. Vogel and T. Wallendorf (Reichenhainer, F.R.G.) Electrical and optical properties of ion-beam-sputtered amorphous silicon—germanium alloy films M. K. Bhan (London, U.K.), L. K. Malhotra and S. C. Kashyap (New Delhi, India) Optical constants of electrochromic polycrystalline WO, thin films prepared by chemical vapour deposition Y. Villachon-Renard, G. Leveque, A. Abdellaoui and A. Donnadieu (Montpellier, France) Optical properties of pyrolytic tin oxide on aluminium A. Roos (Uppsala, Sweden) Metallurgical and Protective Layers Friction and wear behaviour of plasma-nitrided layers on 3% Cr—Mo steel M. B. Karamis (Kayseri, Turkey) Preparation and Characterization Anodic oxidation of tantalum silicides: kinetics of growth and chemical composition J. M. Martinez-Duart, R. Gomez, J. M. Albella, A. Climent, |. Montero (Madrid, Spain), V. P. Parkhutik and V. A. Labunov (Minsk, U.S.S.R.) lon irradiation of high ohmic resistivity thin film resistors M. G. Abraizov, M. |. Abraizova, G. M. Prokyrets and |. A. Chaikovskii (Kishinev, U.S.S.R.) Carbon/tungsten multilayers for X-ray-UV optics deposited by laser evaporation: preparation and interface characterization Ph. MacQuart, F. Bridou and B. Pardo (Orsay, France) Composition, etching and optical properties of silicon nitride films deposited by plasma-enhanced chemical vapour deposition prepared in variable NH,—N, gas mixture diluted with helium B. Reynes (Grenoble, France), C. Ance (Montpellier, France), J. P. Stoquert (Strasbourg, France) and J. C. Bruyére (Grenoble, France) Application of electroreflectance spectroscopy to the characterization of zinc sulphide thin films . J. P. Dufour (Dijon, France) Orientation of CdTe epitaxial films on GaAs(100) grown by vacuum evaporation M.-P. Houng, S.-L. Fu and F.-L. Jeng (Tainan, Taiwan) and J.-R. Chen (Hsinchu, Taiwan) Characterization of long- periodic layered structures by X-ray diffraction IV: Small angle X-ray diffraction from a superlattice with non-ideal interfaces Y. Sasanuma (Tokyo, Japan), M. Uchida, K. Okada, K. Yamamoto, Y. Kitano and A. Ishitani (Shiga, Japan) Characterization study of nitrogen-ion-implanted conventional chromium platings: Part 6 H. Ferber (Stuttgart, F.R.G.), C. K. Mount, G. B. Hoflund (Gainesville, FL, U.S.A.) and S. Hoshino (Tokyo, Japan) 376 CONTENTS Preparation and characterization of thin CsAu films M. Skottke-Klein, A. Bottcher, R. Imbeck, S. Kennou, A. Morgante and G. Ertl (Berlin, F.R.G.) The structure of d.c. magnetron sputtered Al-1%Si films R. J. Wilson and B. L. Weiss (Surrey, U.K.) Langmuir-Blodgett and Related Films Liquid crystal structures of bilayer-forming synethetic amphiphiles, dialkyldimethylammonium bromides K. Okuyama, K. Hoso, N. Maki and H. Hamatsu (Tokyo, Japan) Hydronium ion sensitivity of surface stabilized stearic acid membranes prepared by Langmuir- Blodgett monolayer transfer J.D. Brennan, R. S. Brown, S. C. Ferraro and U. |. Krull (Mississauga, Ont., Canada) Optimization of low pressure silicon nitride film growth from dichlorosilane and ammonia in integrated circuit manufacture G. Peev and L. Zambov (Sofia, Bulgaria) Condensed Matter Film Behaviour Nuclear reactions as a probe of fluorine content in SnO,:F thin films R. Asomoza, A. Maldonado, J. Rickards and E. P. Zironi (Mexico, Mexico), M. H. Farias, L. Cota-Araiza and G. Soto (Ensenada, Mexico) Issue 2 Electronics and Optics Metal-insulator—metal many-layer systems Yu, Yankelevitch, Y. Barengolz and M. Khaskelberg (Tomsk, U.S.S.R.) Ellipsometric method for the determination of the parameters of non-absorbing uniaxial anisotropic films R. Zhu, C. Lin and Y. Wei (Nanjing, China) Ellipsometric investigation of thickness dependence of the optical constants of thin tungsten oxide S. Sacré and L. K. Thomas (Berlin, F.R.G.) Optical and microstructural properties of hafnium dioxide thin films J.P. Lehan, Y. Mao, B. G. Bovard and H. A. Macleod (Tucson, AZ, U.S.A.) Studies of subgap absorption and related parameters by the constant photocurrent method of high rate deposited hydrogenated amorphous silicon films A. Tyagi, O. S. Panwar, B. S. Satyanarayan, P. N. Dixit, T. Seth, R. Bhattacharyya and V. V. Shah (New Delhi, India) Metallurgical and Protective Layers Characterization of the Al/Ta-Si-N/Au metallization P. J. Pokela, E. Kolawa, R. Ruiz and M.-A. Nicolet (Pasadena, CA, U.S.A.) Preparation and Characterization Structural characteristics of YBa,Cu,0, _, films on ZrO,(100) and silicon with a ZrO, buffer layer W. Shi, J. Shi, W. Yao, Zh. Qi, Sh. Tang and G. Zhou (Hefei, China) The preparation, characterization and application of plasma-enhanced chemically vapour deposited silicon nitride films deposited at low temperatures J. Y.-M. Lee, K. Sooriakumar and M. M. Dange (Cleveland, OH, U.S.A.) CONTENTS Synthesis of some V,VI, semiconductors A. Boyer and E. Charles (Montpellier, France) Indium tin oxide thin films prepared by chemical vapour deposition T. Maruyama and K. Fukui (Kyoto, Japan) Langmuir-Blodgett and Related Films Structure and composition of thin films of peripherally unsubstituted phthalocyanine deposited using the Langmuir-Blodgett technique R. D. George, P. F. McMillan, V. A. Burrows and R. Hervig (Tempe, AZ, U.S.A.) Condensed Matter Film Behaviour Determination of layered synthetic microstructure parameters A. D. Akhsakhalyan, A. A. Fraerman, N. |. Polushkin, Yu. Ya. Platonov and N. N. Salashchenko (Nizhny Novgorod, U.S.S.R.) Ellipsometric study of the oxidation of electron-beam-evaporated a-Ge films J.C. G. De Sande, J. L. Escudero and E. Bernabéu (Madrid, Spain) Spatial dependence of ion energy and flux in r.f. magnetron codeposition of CdPbTe films J. G. Cook and S. R. Das (Ottawa, Ont., Canada) Oxygen incorporation during Cr—Si deposition L. van Loyen, G. Sobe and G. Weise (Dresden, F.R.G.) Particle-induced X-ray emission analysis of xenon- irradiated nitride coatings T. Osipowicz and K.-P. Lieb (Gottingen, F.R.G.) Author Index

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