Thin Film Processes

553 Pages·1978·8.348 MB·English

by  John L. Vossen (Auth.)

THIN FILM PROCESSES
Edited by
JOHN L. VOSSEN WERNER KERN
RCA Laboratories
David Sarnoff Research Center
Princeton, New Jersey
ACADEMIC PRESS New York San Francisco London 1978
A Subsidiary of Harcourt Brace Jovanovich, Publishers
COPYRIGHT © 1978, BY ACADEMIC PRESS, INC.
ALL RIGHTS RESERVED.
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Library of Congress Cataloging in Publication Data
Main entry under title:
Thin film processes.
Includes bibliographical references.
1. Thin films. I. Vossen, John L. II. Kern,
Werner, Date
TK7871.15.F5T43 621.38Γ73 78-3348
ISBN 0-12-728250-5
PRINTED IN THE UNITED STATES OF AMERICA
List of Contributors
Numbers in parentheses indicate the pages on which the authors' contributions begin.
VLADIMIR S. BAN (257), RCA Laboratories, Princeton, New Jersey
08540
J. J. CUOMO (11), IBM Thomas J. Watson Research Center, Yorktown
Heights, New York 10598
CHERYL A. DECKERT (401), RCA Laboratories, Princeton, New Jer-
sey 08540
DAVID B. FRASER (115), Bell Telephone Laboratories, Murray Hill,
New Jersey 07974
JAMES M. E. HARPER, (175), IBM Thomas J. Watson Research Cen-
ter, Yorktown Heights, New York 10598
J. R. HOLLAHAN (335), Applied Materials Incorporated, Santa Clara,
California 95051
WERNER KERN (257, 401), RCA Laboratories, Princeton, New Jersey
08540
FREDERICK A. LOWENHEIM (209), 637 West 7th Street, Plainfield,
New Jersey 07060
C. M. MELLIAR-SMITH (497), Bell Telephone Laboratories, Murray
Hill, New Jersey 07974
C.J. MOGAB (497), Bell Telephone Laboratories, Murray Hill, New Jer-
sey 07974
ALAN S. PENFOLD (75), Telic Corporation, Santa Monica, California
90404
R.S. ROSLER* (335), Applied Materials Incorporated, Santa Clara, Cali-
fornia 95051
* Present address: Motorola, Inc., Phoenix, Arizona 85002
ix
χ LIST OF CONTRIBUTORS
JOHN A. THORNTON (75), Telic Corporation, Santa Monica, California
90404
J. L. VOSSEN (3, 11), RCA Laboratories, Princeton, New Jersey 08540
ROBERT K. WAITS (131), Data Systems Division, Hewlett-Packard
Company, Cupertino, California 95014
H. YASUDA (361), Department of Chemical Engineering, University of
Missouri-Rolla, Rolla, Missouri 65401
Preface
Remarkable advances have been made in recent years in the science
and technology of thin film processes for deposition and etching. It is the
purpose of this book to bring together tutorial reviews of selected film
deposition and etching processes from a process viewpoint. Emphasis is
placed on the practical use of the processes to provide working guidelines
for their implementation, a guide to the literature, and an overview of
each process.
It was felt that a book of this sort was needed to provide up-to-date re-
views of processes which have not been reviewed recently (or at all), and
in which significant recent advances have been made. It is hoped that the
book will be useful both to those who wish to gain a broad perspective on
a process or processes in general and to specialists using these processes.
These reviews were completed in late 1977 and literature published up
to that time is included. It is recognized that many of these processes are
being investigated actively. We hope that this research and development
will shed light on some questions that remain unanswered at this time,
leading to more rational selection and use of thin film processes.
Finally, we wish to thank the contributing authors for their consider-
able efforts in summarizing the voluminous literature of their specialties,
RCA Laboratories for the use of their scientific publications facilities, and
our wives for patience and understanding during the course of this under-
taking.
xi
THIN FILM PROCESSES
Introduction
J. L VOSSEN
RCA Laboratories
Princeton, New Jersey
I. The Organization of This Book 3
II. Other Film Deposition Processes 5
References 5
I. THE ORGANIZATION OF THIS BOOK
The processes selected for review fall into four general categories: (1)
physical methods of film deposition, (2) chemical methods of film deposi-
tion, (3) hybrid (i.e., physical—chemical) methods of film deposition, and
(4) patterning techniques.
Part II of the book deals with the mainly physical deposition pro-
cesses; those selected for review are all sputtering techniques. Chapter
II-1 covers conventional sputtering and contains material on sputtering
target kinetics that is introductory to the remaining chapters on sputter-
ing. In addition, this chapter provides material on glow discharges and their
effects on substrates which applies not only to the sputtering chapters, but
also to the glow discharge deposition and plasma etching chapters (IV-1,
IV-2, V-2).
Chapters II-2-II-4 deal with various magnetron sputtering configura-
tions. These are highly efficient glow discharge sputtering sources that de-
pend on crossed electric and magnetic fields to produce high ion densities
and high deposition rates with minimal substrate bombardment. Chapter
II-2 describes cylindrical magnetrons in which the magnetic field is uni-
formly orthogonal to the electric field. Chapters II-3 and II-4 discuss
planar and conical configurations in which there are gradient magnetic
3
Copyright © 1978 by Academic Press, Inc.
All rights of reproduction in any form reserved.
ISBN 0-12-728250-5
4 J. L. VOSSEN
fields. The basic physics of uniform and gradient fields are discussed in
Chapter II-2, and the process effects of gradient fields are further exposed
in Chapters II-3 and II-4.
Chapter II-5 is devoted to ion-beam deposition in which substrates are
not immersed in a glow discharge, but are in a relatively good vacuum.
Not only are the important consequences of this covered, but the basic
physics and technology of ion-gun structures are included. The same gun
structures are used in ion-beam etching (ion milling) (Chapter V-2).
The processes that have been categorized as chemical include chemi-
cal vapor deposition and deposition of inorganic or metal films from solu-
tion by plating, anodization, etc. These processes will be found in Part III.
Hybrid processes (as defined here) are those which use glow dis-
charges to activate chemical deposition processes. Chapter IV-1 dis-
cusses plasma deposition—the deposition of inorganic compounds by the
glow discharge decomposition of reagents normally used in chemical
vapor deposition. Chapter IV-2 discusses the processes involved in pol-
ymerization of monomers in a glow discharge.
Part V covers etching techniques for films and substrates. Etching for
Table I
Other Film Deposition Processes
Process References Process References
1. Thermal evaporation [1-5] 15. Electrophoresis [41-44]
from resistance-, 16. Screen printing [45-49]
electron-beam-, rf-, 17. Wire flame spraying [32, 50, 51]
or laser-heated 18. Powder flame spraying [32, 51, 52]
sources 19. Plasma flame spraying [32, 51, 53]
2. Molecular-beam [6, 6a] 20. Arc plasma spraying [54-57]
epitaxy 21. Detonation coating [58]
3. Chemical vapor depo- [7-11] 22. Diffusion coating [32, 59, 60]
sition for epitaxy 23. Pack cementation [59]
4. Thermal oxidation [12-17] 24. Cladding [32, 61]
5. Plasma anodization [18-20] 25. Explosive cladding [62]
6. Ion implantation [21-24] 26. Fluidized-bed coating [27, 28, 63-70]
7. Electrostatic spraying [25-30] 27. Vacuum impregnation [27, 28]
8. Printing [31] 28. Mechanical (peen) [32]
9. Spraying [27, 28, 32] plating
10. Spin coating [27, 28, 32, 33] 29. Brush coating [27, 28]
11. Dip coating [27, 28] 30. Roller coating [27, 28]
12. Electric harmonic [34] 31. Optical lithography [71-76]
spraying 32. X-ray lithography [71, 72, 76, 77]
13. Molten-metal dip [32] 33. Electron beam [71, 72, 75, 76]
coating lithography
14. Liquid-phase epitaxy [35-40]
1-1. INTRODUCTION 5
pattern delineation is emphasized. Chapter V-l details the fundamentals
of chemical etching and provides tables of chemical etchants for an ex-
tremely wide range of materials. Chapter V-2 deals with four etching
processes utilizing vacuum techniques: ion beam etching (milling), rf-
sputter etching with inert-gas ions, plasma etching in which reactive-gas
ions and excited neutrals form volatile compounds with film surfaces,
and reactive-ion etching which is a hybrid process that uses rf-sputter
etching equipment with reactive gases similar to those used in plasma
etching.
II. OTHER FILM DEPOSITION PROCESSES
Numerous important processes for film deposition are not reviewed in
this book for one or more of several reasons. Processes that have been
reviewed adequately are not included because an additional review would
be redundant. On the other hand, some thin-film processes are not yet ma-
ture enough to warrant a review. Also, processes which generally involve
very thick films (>25 μπι) have not been included. While these processes
are not specifically covered in this book, their importance is nevertheless
recognized. Therefore selected references to reviews or other literature
on 33 other processes are given in Table I.
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1
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1-1. INTRODUCTION 7
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