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Thin-Film Diamond II PDF

411 Pages·2004·27.586 MB·English
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Thin-Film Diamond II SEMICONDUCTORS AND SEMIMETALS Volume 77 Semiconductors and Semimetals A Treatise Edited by R.K. Willardson Eicke R. Weber CONSULTING PHYSICIST DEPARTMENT OF MATERIALS 12722 EAST 23RD AVENUE SCIENCE AND MINERAL SPOKANE, WA 99216-0327 ENGINEERING USA UNIVERSITY OF CALIFORNIA AT BERKELEY BERKELEY, CA 94720 USA Thin-Film Diamond 11 SEMICONDUCTORS AND SEMIMETALS Volume 77 CHRISTOPH E. NEBEL Physics Department/Walter Schottky Institute Technische Universit/it Mtinchen Garching, Germany JURGEN RISTEIN Institute for Technical Physics University of Erlangen-Nuernberg Erlangen, Germany ELSEVIER ACADEMIC PRESS Amsterdam (cid:12)9 Boston (cid:12)9 Heidelberg (cid:12)9 London (cid:12)9 New York ~ Oxford Paris (cid:12)9 San Diego. San Francisco (cid:12)9 Singapore (cid:12)9 Sydney (cid:12)9 Tokyo ELSEVIER B.V. ELSEVIER Inc. Sara Burgerhartstraat 25 525 B Street, Suite 1900 P.O. 211, 1000 AE Amsterdam San Diego, CA 92101-4495 The Netherlands USA ELSEVIER Ltd ELSEVIER Ltd The Boulevard, Langford Lane 84 Theobalds Road Kidlington, Oxford OX5 1GB London WC1X 8RR UK UK (cid:14)9 2004 Elsevier Inc. All rights reserved. This work is protected under copyright by Elsevier Inc., and the following terms and conditions apply to its use: Photocopying Single photocopies of single chapters may be made for personal use as allowed by national copyright laws. Permission of the Publisher and payment of a fee is required for all other photocopying, including multiple or systematic copying, copying for advertising or promotional purposes, resale, and all forms of document delivery. Special rates are available for educational institutions that wish to make photocopies for non-profit educational classroom use. Permissions may be sought directly from Elsevier's Rights Department in Oxford, UK: phone (+44) 1865 843830, fax (+44) 1865 853333, e-mail: [email protected]. Requests may also be completed on-line via the Elsevier homepage (http://www.elsevier.corn/locate/permissions). In the USA, users may clear permissions and make payments through the Copyright Clearance Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, USA; phone: (+1) (978) 7508400, fax: (+1) (978) 7504744, and in the UK through the Copyright Licensing Agency Rapid Clearance Service (CLARCS), 90 Tottenham Court Road, London W 1P 0LP, UK; phone: (+44) 20 7631 5555; fax: (+44) 20 7631 5500. Other countries may have a local reprographic rights agency for payments. Derivative Works Tables of contents may be reproduced for internal circulation, but permission of the Publisher is required for external resale or distribution of such material. Permission of the Publisher is required for all other derivative works, including compilations and translations. Electronic Storage or Usage Permission of the Publisher is required to store or use electronically any material contained in this work, including any chapter or part of a chapter. Except as outlined above, no part of this work may be reproduced, stored in a retrieval system or transmitted in any form or by any means, electronic, mechanical, photocopying, recording or otherwise, without prior written permission of the Publisher. Address permissions requests to: Elsevier's Rights Department, at the fax and e-mail addresses noted above. Notice No responsibility is assumed by the Publisher for any injury and/or damage to persons or property as a matter of products liability, negligence or otherwise, or from any use or operation of any methods, products, instructions or ideas contained in the material herein. Because of rapid advances in the medical sciences, in particular, independent verification of diagnoses and drug dosages should be made. 1st. edition 2004 Library of Congress Cataloging in Publication Data A catalog record is available from the Library of Congress. British Library Cataloguing in Publication Data A catalogue record is available from the British Library. ISBN:0-12-752186-0 ISSN:0080-8784 @ The paper used in this publication meets the requirements of ANSI/NISO Z39.48-1992 (Permanence of Paper). Printed in Great Britain. Contents LIST OF CONTRIBUTORS xi PREFACE xiii Chapter 1 Hydrogen Diffusion and Acceptor Passivation in Diamond Jacques Chevallier 1. INTRODUCTION 1 2. HYDROGEN INCORPORATION IN DIAMOND AND ANALYSIS 2 2.1. Incorporation 2 2.2. Analysis 3 3. LOCATIONSA ND CHARGE STATES OF HYDROGEN 4 4. DIFFUSION PROPERTIES OF HYDROGEN IN MONOCRYSTALLINE DIAMOND 6 4.1. p-Type Boron-doped 7 4.2. The Case of n-Type 16 5. PASSIVATIONO F BORON ACCEPTORS BY HYDROGEN 17 6. MODEL FOR THE FORMATION OF (B,H) PAIRS 22 7. THERMAL STABILITY OF (B,H) PAIRS AND HYDROGEN 25 8. CONCLUSION 31 ACKNOWLEDGEMENTS 32 REFERENCES 32 Chapter 2 Structural and Electronic Properties 37 of Diamond Surfaces Jiirgen Ristein 1. INTRODUCTION 37 2. SURFACER ECONSTRUCTIONS AND SURFACE STATES 39 2.1. The Diamond (lO0) Surface 40 2.2. The Diamond (111) Surface 44 2.3. The Diamond (11 O) Surface 48 2.4. Hydrocarbon Contaminants of Diamond Surfaces 50 2.5. Summary of Reconstructions and Surface States 52 vi Contents 3. THE ELECTRON AFFINITY OF DIAMOND SURFACES 52 3.1. The General Concept: Band Bending vs. Electron Affinity Changes 52 3.2. The Influence of Adsorbates on the Electron Affinity of Diamond Surfaces 55 3.3. Summary: The Electron Affinity of Diamond Surfaces 61 4. SURFACEB AND BENDING 61 4.1. General Concept 61 4.2. Hole Depletion Layers on p-Type Diamond 65 4.3. Hole Accumulation Layers on Intrinsic Diamond 75 4.4. Summary: Surface Band Bending 81 5. HYDROGEN-INDUCEDS URFACE CONDUCTIVITY 82 5.1. Experimental Observations 82 5.2. The Electrochemical Surface Transfer Doping Model 87 5.3. Summary: Hydrogen-induced Surface Conductivity 92 ACKNOWLEDGEMENTS 93 REFERENCES 93 Chapter 3 Electrochemistry of Diamond 97 John C. Angus, Yuri V. Pleskov and Sally C. Eaton 1. HISTORYO F ELECTROCHEMISTRY ON DIAMOND 97 2. GENERALP ROPERTIES OF DIAMOND ELECTRODES 98 2.1. Surface Termination 98 2.2. Reactivity 100 2.3. Doping 101 2.4. Related Materials 102 3. SEMICONDUCTINGE LECTRODES 102 3.1. Basic Principles 102 3.2. Surface Conductivity 105 4. ELECTROCHEMICALC HARACTERIZATION OF DIAMOND FILMS 106 4.1. Electrical Double Layer Structure and Differential Capacitance: Mott-Schottky Plots 106 4.2. Photoelectrochemical Characterization 109 4.3. Impedance-Spectroscopy Characterization 112 5. SUMMARY 114 ACKNOWLEDGEMENTS 115 REFERENCES 115 Chapter 4 Electroanalytical Applications 121 of Diamond Electrodes Greg M. Swain 1. INTRODUCTION 121 2. BASICSO F ELECTROCHEMICAL MEASUREMENTS 121 3. DIAMONDE LECTRODE ARCHITECTURES, SUBSTRATE MATERIALS, AND ELECTROCHEMICAL CELLS 123 4. BASICE LECTROCHEMICALP ROPERTIES OF MICROCRYSTALLINE DIAMOND THIN-FILM ELECTRODES 128 Contents vii 5. BASIC ELECTROCHEMICAL PROPERTIES OF NANOCRYSTALLINE DIAMOND THIN-FILM ELECTRODES 133 6. SPECTROELECTROCHEMISTRY 136 7. ELECTROANALYTICALA PPLICATIONS 137 7.1. Azide Detection 138 7.2. Aliphatic Polyamine Detection 139 7.3. Trace Metal Ion Analysis 140 7.4. Nitrite Detection 141 7.5. NADH Detection 141 7.6. Uric Acid Detection 142 7.7. Histamine and Serotonin Detection 142 7.8. Direct Electron Transfer to Heme Peptide and Peroxidase 143 7.9. Carbamate Pesticide Detection 144 8. CONCLUSIONS 144 ACKNOWLEDGEMENTS 145 REFERENCES 145 Chapter 5 Industrial Applications of Diamond Electrodes 149 Werner Haenni, Philippe Rychen, Matthyas Fryda and Christos Comninellis 1. DIAMONDE LECTRODES: SPECIFICATION 149 1.1. Introduction 149 1.2. Substrates for Diamond Electrodes 150 1.3. Active Electrode Layer 155 2. FABRICATIONM ETHOD 159 2.1. Large-scale Fabrication of BDD Electrodes 159 2.2. Characterization, Testing and Quality Control 162 3. MICROANALYSISW ITH DIAMOND ELECTRODES 164 3.1. Introduction 164 3.2. Microelectrodes for Trace Material Analysis 164 3.3. Electrodes for Electric Field Measurements in Geophysical Environments 166 4. ELECTROCHEMICALR EACTORS FOR SYNTHESIS AND WATER TREATMENT 167 4.1. Introduction 167 4.2. Monopolar Mesh Reactor 167 4.3. Modular Electrochemical Reactor: DiaCell | 168 5. ELECTROSYNTHESISO F ORGANICS AND OXIDANTS 171 5.1. Introduction 171 5.2. Electroorganic Synthesis Using BDD Anode 171 5.3. Preparation of Powerful Oxidants 174 5.4. Other Potential Applications 179 6. APPLICATIONO F BDD ELECTRODES IN WATER TREATMENT 182 6.1. Introduction 182 6.2. Electrochemical Treating of Waste Water Containing Organic Pollutants 182 6.3. Electrochemical Treatment of Waste Water Containing Cyanides 191 6.4. Disinfection of Swimming Pool Water 192 ACKNOWLEDGEMENTS 194 REFERENCES 194 viii Contents Chapter 6 Diamond-based Radiation and Photon Detectors 197 Philippe Bergonzo and Richard B. Jackman 1. INTRODUCTION 197 1.1. Properties of Diamond for Radiation Detection 197 1.2. Resilience of Diamond to Harsh Environments 199 1.3. Applications for Diamond-based Detectors 200 2. FUNDAMENTALS 203 2.1. Charge Generation Principles 203 2.2. Detection Modes 205 2.3. Device Fabrication 207 2.4. An Example of a Diamond-based Structure: Alpha-detection 208 2.5. Problems in the Use of Natural Diamond 210 2.6. CVD Thin Film Diamond for Detector Applications 217 3. INFLUENCEO F DEFECTS ON DETECTOR PERFORMANCE 221 3.1. Nature of Defects in Diamond 221 3.2. Intrinsic and Extrinsic Photoconductivity 225 3.3. Passivating Defects Within CVD Diamond Films for UV Detector Applications 227 3.4. Improved CVD Films for Other Detector Applications 242 4. THE EFFECT OF THE POLYCRYSTALLINE NATURE OF CVD DIAMOND 246 4.1. Mapping Device Sensitivity 246 4.2. Large Grain CVD Films 247 5. APPLICATIONT O PHOTODETECTION 250 5.1. Principles of Detection 250 5.2. Photoconductive Devices 252 5.3. Imaging Arrays 261 5.4. Photodiodes 267 5.5. Phototransistors 271 5.6. Application to Deep UV Laser-based Stepper Tools for Photolithography 276 5.7. Photoconductive Device Tolerance to High Deep UV Flux Levels 281 5.8. Application to X-ray and Synchrotron Beam Metrology 290 5.9. Fast Pulse Metrology 292 6. APPLICATIONT O RADIATION DETECTION 294 6.1. Diamond Resilience 294 6.2. Applications Addressing Detection in the Nuclear Industry 295 7. CONCLUDINGR EMARKS 300 ACKNOWLEDGEMENTS 302 REFERENCES 303 Chapter 7 Diamond Field Effect Transistors Using 311 H-Terminated Surfaces Hiroshi Kawarada l. INTRODUCTION--DIAMONDE LECTRONICS 311 2. SURFACE ELECTRIC PROPERTIES OF DIAMOND AND THE STRUCTURE OF SURFACE CHANNEL FETs 312 3. Low SCHOTTKY BARRIER HEIGHTS ON H-TERMINATED DIAMOND 316 4. ACCEPTORA ND CARRIER DISTRIBUTIONS UNDER THE H-TERMINATED SURFACES 320 5. HIGH-FREQUENCYO PERATION OF DIAMOND FETs 323 Contents ix 6. ELECTROLYTE-SOLUTION-GATED IAMOND FIELD EFFECT TRANSISTOR 328 7. NANODEVICEF ORMATION BY LOCAL OXIDATION OF DIAMOND 332 8. SUMMARY 335 REFERENCES 336 Chapter 8 Diamond Surface Acoustic Wave Device 339 Shinichi Shikata and Hideaki Nakahata 1. INTRODUCTION 339 2. SAW DEVICE AND DIAMOND SAW 339 3. BASIC SAW PARAMETERS 340 3.1. SA W Parameters and Their Evaluation 340 3.2. SAW Parameters in Layered Structures with Diamond 342 4. CHARACTERISTICSO F DIAMOND SAW DEVICES 346 5. DIAMONDW AFER TECHNOLOGY AND FABRICATION PROCESS 348 5.1. Diamond Wafer Technology 348 5.2. Fabrication Process 350 6. APPLICATIONS 352 6.1. Narrow Band Filters and Resonators 352 6.2. Wireless Applications 356 6.3. Reliability 357 7. SUMMARY 357 REFERENCES 358 INDEX 359 CONTENTS OF VOLUMES IN THIS SERIES 373

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