The Physics of Submicron Semiconductor Devices

729 Pages·1988·24.139 MB·English

by  Eugène Constant (auth.), Harold L. Grubin, David K. Ferry, C. Jacoboni (eds.)

The Physics of Submicron
Semiconductor Devices
NATO ASI Series
Advanced Science Institutes Series
A series presenting the results of activities sponsored by the NA TO Science Committee,
which alms at the dissemination of advanced scientific and technological knowledge,
with a view to strengthening links between sCientific communities.
The series is published by an international board of publishers in conjunction with the
NATO Scientific Affairs Division
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C Mathematical Kluwer Academic Publishers
and Physical Sciences Dordrecht, Boston, and London
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E Applied Sciences
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Recent Volumes In this Series
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edited by Peter G. O. Freund and K. T. Mahanthappa
Volume 176-Nonlinear Evolution and Chaotic Phenomena
edited by Giovanni Gallavotti and Paul F. Zweifel
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edited by N. B. Abraham, F. T. Arecchi, and L. A. Lugiato
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edited by Anthony K. Hyder, M. Franklin Rose,
and Arthur H. Guenther
Volume 179-lnterfaces, Quantum Wells, and SuperlaUices
edited by C. Richard Leavens and Roger Taylor
Volume 180-The Physics of Submicron Semiconductor Devices
edited by Harold L. Grubin, David K. Ferry, and
C.Jacoboni
Volume 181-Fundamental Processes of Atomic Dynamics
edited by J. S. Briggs, H. Kleinpoppen, and H. O. Lutz
Volume 182-Physics, Fabrication, and Applications of Multilayered Structures
edited by P. Dhez and C. Weisbuch
Series B: Physics
The Physics of Submicron
Semiconductor Devices
Edited by
Harold L. Grubin
Scientific Research Associates, Inc.
Glastonbury, Connecticut
David K. Ferry
Arizona State University
Tempe, Arizona
and
C. Jacoboni
Institute of Physics
University of Modena
Modena, Italy
Springer Science+Business Media, LLC
Based on a NATO Advanced Study Institute on
Physics of Submicron Semiconductor Devices,
held July 10-23, 1983,
in San Miniato, Italy
Library of Congress Cataloging in Publication Data
NATO Advanced Study Institute on Physics of Submicron Semiconductor
Devices, (1983, in San Miniato, Italy)
The Physics of submicron semiconductor devices.
(NATO ASI series. Series B, Physics; v. 180)
Based on a NATO Advanced Study Institute on Physics of Submicron Semi
conductor Devices, held July 10-23,1983, in San Miniato, Italy.
Bibliography: p.
Includes Index.
1. Semiconductors—Congresses. 2. Electron transport—Congresses. 3. Micro-
structure—Congresses. I. Grubin, Harold L II. Ferry, David K. III. Jacoboni, C. IV.
Title. V. Series.
QC610.9.N37 1983 537.6'22 88-19713
ISBN 978-1-4899-2384-4
ISBN 978-1-4899-2384-4 ISBN 978-1-4899-2382-0 (eBook)
DOI 10.1007/978-1-4899-2382-0
©1988 Springer Science+Business Media New York
Originally published by Plenum Press, New York in 1988
Softcover reprint of the hardcover 1st edition 1988
All rights reserved
No part of this book may be reproduced, stored in a retrieval system,
or transmitted in any form or by any means, electronic, mechanical, photocopying,
microfilming, recording, or otherwise, without written permission from the Publisher
PREFACE
The papers contained in the volume represent lectures delivered
as a 1983 NATO ASI, held at Urbino, Italy. The lecture series
was designed to identify the key submicron and ultrasubmicron
device physics, transport, materials and contact issues.
Nonequilibrium transport, quantum transport, interfacial and
size constraints issues were also highlighted. The ASI was
supported by NATO and the European Research Office.
H. L. Grubin
D. K. Ferry
C. Jacoboni
v
CONTENTS
MODELLING OF SUB-MICRON DEVICES.................. .......... 1
E. Constant
BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33
K. Hess
TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON
DEVICES. . .. . . . . . . .. . .. . .. . .... ... .. . . . . .. . . . .. . . . . . . . . . 45
H. L. Grubin
EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179
C. E. C. Wood
INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195
C. W. Wilms en
THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES
AND INTERFACES......................................... 223
C. Calandra
DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253
W. Monch
ENSEMBLE MONTE CARLO TECHNIqUES............................. 289
C. Jacoboni
NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323
L. Reggiani
SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361
K. Hess
SUBMICRON LITHOGRAPHY 373
C. D. W. Wilkinson and S. P. Beaumont
QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON
CONFINEMENT IN ONE DIMENSION.... ....................... 401
B. D. McCombe
vii
viii CONTENTS
PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445
P. J. Price
CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY
TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477
J. J. Niez
DEVICE-DEVICE INTERACTIONS............ ...................... 503
D. K. Ferry
QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521
G. J. Iafrate
FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT
ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577
S. J. Allen, Jr.
THE INFLUENCE OF CONTACTS ON THE BEHAVIOR OF NEAR AND
SUB-MICRON InP DEVICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 591
P. A. Blakey, J. East and M. P. Shaw
MONTE CARLO SIMULATION OF TRANSPORT IN SUBMICRON
STRUCTURES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 607
J. Zimmermann, A. Ghis and B. Boittiaux
TWO DIMENSIONAL ELECTRON GAS FET.. ........ .................. 629
N. T. Linh
HOT ELECTRON TRANSFER AMPLIFIERS. ............. .............. 645
M. Heib1um and M. I. Nathan
NEW GRADED BAND GAP AND SUPERLATTICE STRUCTURES AND THEIR
APPLICATIONS TO PHOTODETECTORS, BIPOLAR TRANSISTORS AND
HIGH-SPEED DEVICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 659
F. Capasso
METAL-SEMICONDUCTOR INTERFACES.............................. 683
R. H. Williams
NONEQUILIBRIUM PHONONS IN SEMICONDUCTORS: POWER DISSIPATION
OF HIGHLY LASER-EXCITED ELECTRON-HOLE PLASMAS.......... 703
P. Kocevar
PICOSECOND MEASUREMENTS OF DEVICE AND CIRCUIT TRANSIENT
RESPONSE WITH OPTOELECTRIC TECHNIqUES.................. 713
R. B. Hammond
INDEX. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... .. 729
MODELLING OF SUB-MICRON DEVICES
Eug~ne Constant
Centre Hygerfrequences et Semiconducteurs
LA CNRS N 287, GRECO Microonde NO 11
Universit~ de Lille 1. Bat P3
59655 VILLENEUVE D'ASCQ Cedex, France
INTRODUCTION
Progress in the microelectronics industry is strongly coupled
with the ability to make ever increasing numbers of smaller devices
on a single chip. The advent of high-resolution electron and X-ray
lithographic techniques is leading toward an era in which individual
features sizes might well be fabricated on the scale of 10-20 nm.
It will then become feasible to develop very small device structures
where size and related effects may be as important as the bulk prop
erties of the host semiconductor material. Moreover, it becomes
obvious that we must now ask whether classical device modelling may
be extrapolated down to the very small space and time scales usually
encountered in sub-micron devices. It is the purpose of this paper
to study in a first part what kind of new phenomena may occur in sub
micron devices, to suggest and to describe in a second part new
methods of modelling which take them into account and to discuss in
a third part what could be the future performance of submicronic
logic or microwave devices.
WHAT NEW PHENOMENA OCCUR AND MUST BE TAKEN INTO ACCOUNT IN SUB
MICRONIC DEVICES
Background
The three main parameters characterizing the dynamics of the
carrier in a semiconductor, the velocity, the effective mass and the
energy depend on the band structure through the following equations:
2 E. CONSTANT
)-1
£ = £(-k+ ), -v+ and m*= fl,2 ( !..2. £ (1)
Clk2 -+
k
As a re~ult, these three quantities will be determined !f the wave
vector k is known. For this, we have to remember that k results
from:
- the determinist effect of the electric field which modifies
k
every time step lit through the equation:
(2)
- the stoc~astic effect of the scattering mechanisms which may
randomly change k with a probability
(3)
In usual cases, the time and space variation of the electric
field during the carrier mean free time and along the carrier mean
free path can be neglected. Carriers can then be considered as in
steady state conditions, since there is a balance between the effect
of the electric field and the scattering mechanisms. As a result,
if relatively broad energy and velocity distributions are observed
due to the random nature of the scattering mevc-hanisms, all the av
erages values of £ and of the drift velocity depend only on the
instantaneous local electric field regardless of the values of the
electric field in the past and all around the point being studied
in the semiconductor material. In this case, classical current equa
tions and methods of modelling can be used assuming that all quantit
ies only depend on the electric field.
"Non steady state carrier transport" will be achieved either
when very high frequency or fast transient voltage are applied to
large devices or when submicronic devices are used (even in steady
state regime). In these cases, the variation of the electric field
during either a mean free time between two collisions or along a mean
free path cannot be neglected and new features will characterize
electron transport and must be taken into account in the modelling
of the devices.
In order to obtain a good understanding of all these phenomena
which occur either in large device for a very high frequency opera-