ebook img

Technology computer aided design : simulation for VLSI MOSFET PDF

445 Pages·2011·33.17 MB·English
Save to my drive
Quick download
Download
Most books are stored in the elastic cloud where traffic is expensive. For this reason, we have a limit on daily download.

Preview Technology computer aided design : simulation for VLSI MOSFET

ElEctrical EnginEEring S a r Responding to recent developments and a growing market for K Technology a integrated circuit manufacturing, Technology Computer Aided r Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The compuTer book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design Aided design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation Simulation for VLSI MOSFET of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in this area, and analyzes the evolution of the role of modeling and simulation of MOSFET. The book also provides exposure to the two most commercially popular TCAD simulation tools: Silvaco and Sentaurus. R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making TCAD tools indispensable for modern VLSI device technologies. VLSI device technologies provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provide a thorough foundation for the development of models that simplify the design verification process and make it cost effective. K14929 ISBN: 978-1-4665-1265-8 Edited by 90000 Chandan Kumar Sarkar 9 781466 512658 K14929_Cover_mech.indd All Pages 4/12/13 12:06 PM TECHNOLOGY COMPUTER AIDED DESIGN Simulation for VLSI MOSFET TECHNOLOGY COMPUTER AIDED DESIGN Simulation for VLSI MOSFET Edited by Chandan Kumar Sarkar Boca Raton London New York CRC Press is an imprint of the Taylor & Francis Group, an informa business CRC Press Taylor & Francis Group 6000 Broken Sound Parkway NW, Suite 300 Boca Raton, FL 33487-2742 © 2013 by Taylor & Francis Group, LLC CRC Press is an imprint of Taylor & Francis Group, an Informa business No claim to original U.S. Government works Version Date: 20130304 International Standard Book Number-13: 978-1-4665-1266-5 (eBook - PDF) This book contains information obtained from authentic and highly regarded sources. Reasonable efforts have been made to publish reliable data and information, but the author and publisher cannot assume responsibility for the validity of all materials or the consequences of their use. The authors and publishers have attempted to trace the copyright holders of all material reproduced in this publication and apologize to copyright holders if permission to publish in this form has not been obtained. If any copyright material has not been acknowledged please write and let us know so we may rectify in any future reprint. Except as permitted under U.S. Copyright Law, no part of this book may be reprinted, reproduced, transmitted, or utilized in any form by any electronic, mechanical, or other means, now known or hereafter invented, including photocopying, micro- filming, and recording, or in any information storage or retrieval system, without written permission from the publishers. For permission to photocopy or use material electronically from this work, please access www.copyright.com (http://www. copyright.com/) or contact the Copyright Clearance Center, Inc. (CCC), 222 Rosewood Drive, Danvers, MA 01923, 978-750- 8400. CCC is a not-for-profit organization that provides licenses and registration for a variety of users. For organizations that have been granted a photocopy license by the CCC, a separate system of payment has been arranged. Trademark Notice: Product or corporate names may be trademarks or registered trademarks, and are used only for identi- fication and explanation without intent to infringe. Visit the Taylor & Francis Web site at http://www.taylorandfrancis.com and the CRC Press Web site at http://www.crcpress.com To our family members Contents Preface ......................................................................................................................ix The Editor .............................................................................................................xiii Contributors ...........................................................................................................xv 1 Introduction to Technology Computer Aided Design ............................1 Samar K. Saha 2 Basic Semiconductor and Metal-Oxide-Semiconductor (MOS) Physics .............................................................................................................45 Swapnadip De 3 Review of Numerical Methods for Technology Computer Aided Design (TCAD) ...........................................................................................145 Kalyan Koley 4 Device Simulation Using ISE-TCAD .....................................................155 N. Mohankumar 5 Device Simulation Using Silvaco ATLAS Tool ....................................187 Angsuman Sarkar 6 Study of Deep Sub-Micron VLSI MOSFETs through TCAD ...........237 Srabanti Pandit 7 MOSFET Characterization for VLSI Circuit Simulation ...................267 Soumya Pandit 8 Process Simulation of a MOSFET Using TSUPREM-4 and Medici ....363 Atanu Kundu vii

Description:
Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, e
See more

The list of books you might like

Most books are stored in the elastic cloud where traffic is expensive. For this reason, we have a limit on daily download.