Switchmode RF Power Amplifiers

433 Pages·2007·6.68 MB·English

by  Andrei Grebennikov

Grebennikov:SwitchmodeRFPowerAmplifiers Prelims FinalProof page 3 7.6.2007 12:19pm CompositorName:PDjeapradaban
Switchmode RF Power Amplifiers
Andrei Grebennikov
Nathan O. Sokal
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Grebennikov,Andrei,1956–
Switchmoderfpoweramplifiers/ByAndreiGrebennikovandNathanO.Sokal.–1sted.
p.cm.
Includesbibliographicalreferencesandindex.
ISBN978-0-7506-7962-6(alk.paper)
1.Poweramplifiers. 2.Microwaveamplifiers. I. Sokal,NathanO.II. Title.
TK7871.58.P6G75 2007
621.3815’35–dc22 2007017121
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Table of Contents
About Andrei Grebennikov........................................................................................... ix
About Nathan O. Sokal............................................................................................... xi
Preface..................................................................................................................... xiii
Acknowledgments ..................................................................................................... xvii
Chapter 1: Power-Amplifier Design Principles................................................................. 1
1.1 Spectral-Domain Analysis................................................................................................ 1
1.2 Basic Classes of Operation: A, AB, B, and C................................................................. 7
1.3 Active Device Models.................................................................................................... 15
1.4 High-Frequency Conduction Angle............................................................................... 20
1.5 Nonlinear Effect of Collector Capacitance.................................................................... 27
1.6 Push-Pull Power Amplifiers........................................................................................... 30
1.7 Power Gain and Stability............................................................................................... 35
1.8 Parametric Oscillations................................................................................................... 46
References.............................................................................................................................. 50
Chapter 2: Class-D Power Amplifiers........................................................................... 55
2.1 Switched-Mode Power Amplifiers with Resistive Load............................................... 55
2.2 Complementary Voltage-Switching Configuration....................................................... 64
2.3 Transformer-Coupled Voltage-Switching Configuration.............................................. 69
2.4 Symmetrical Current-Switching Configuration............................................................. 71
2.5 Transformer-Coupled Current-Switching Configuration............................................... 74
2.6 Voltage-Switching Configuration with Reactive Load................................................. 78
2.7 Drive and Transition Time............................................................................................. 82
2.8 Practical Class-D Power Amplifier Implementation..................................................... 89
References.............................................................................................................................. 92
Chapter 3: Class-F Power Amplifiers........................................................................... 95
3.1 Biharmonic Operation Mode.......................................................................................... 95
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3.2 Idealized Class-F Mode................................................................................................ 104
3.3 Class F with Maximally Flat Waveforms.................................................................... 108
3.4 Class F with Quarter-wave Transmission Line........................................................... 115
3.5 Effect of Saturation Resistance and Shunt Capacitance.............................................. 119
3.6 Load Networks with Lumped Elements...................................................................... 123
3.7 Load Networks with Transmission Lines.................................................................... 129
3.8 LDMOSFET Power-Amplifier Design Examples....................................................... 133
3.9 Practical RF and Microwave Class-F Power Amplifiers............................................. 138
References............................................................................................................................ 145
Chapter 4: Inverse Class F........................................................................................ 151
4.1 Biharmonic Operation Mode........................................................................................ 151
4.2 Idealized Inverse Class-F Mode................................................................................... 158
4.3 Inverse Class F with Quarter-wave Transmission Line............................................... 161
4.4 Load Networks with Lumped Elements...................................................................... 162
4.5 Load Networks with Transmission Lines.................................................................... 164
4.6 LDMOSFET Power-Amplifier Design Examples....................................................... 167
4.7 Practical Implementation.............................................................................................. 172
References............................................................................................................................ 176
Chapter 5: Class E with Shunt Capacitance................................................................ 179
5.1 Effect of Detuned Resonant Circuit............................................................................. 179
5.2 Load Network with Shunt Capacitor and Series Filter............................................... 183
5.3 Matching with Standard Load...................................................................................... 192
5.4 Effect of Saturation Resistance.................................................................................... 195
5.5 Driving Signal and Finite Switching Time.................................................................. 198
5.6 Effect of Nonlinear Shunt Capacitance....................................................................... 206
5.7 Push-Pull Operation Mode........................................................................................... 208
5.8 Load Network with Transmission Lines...................................................................... 213
5.9 Practical RF and Microwave Class-E Power Amplifiers and Applications................ 218
References............................................................................................................................ 227
Chapter 6: Class E with Finite dc-Feed Inductance...................................................... 233
6.1 Class E with One Capacitor and One Inductor............................................................ 233
6.2 Generalized Class-E Load Network with Finite dc-Feed Inductance......................... 241
6.3 Subharmonic Class E.................................................................................................... 250
6.4 Parallel-Circuit Class E................................................................................................ 253
6.5 Even-Harmonic Class E............................................................................................... 257
6.6 Effect of Bondwire Inductance.................................................................................... 260
6.7 Load Network with Transmission Lines...................................................................... 261
6.8 Broadband Class E....................................................................................................... 269
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6.9 Power Gain................................................................................................................... 280
6.10 CMOS Class-E Power Amplifiers.............................................................................. 283
References............................................................................................................................ 287
Chapter 7: Class E with Quarter-wave Transmission Line............................................ 293
7.1 Load Network with Parallel Quarter-wave Line......................................................... 293
7.2 Optimum Load Network Parameters........................................................................... 301
7.3 Load Network with Zero Series Reactance................................................................. 302
7.4 Matching Circuit with Lumped Elements.................................................................... 307
7.5 Matching Circuit with Transmission Lines.................................................................. 310
7.6 Load Network with Series Quarter-wave Line and Shunt Filter................................ 312
References............................................................................................................................ 314
Chapter 8: Alternative and Mixed-Mode High-Efficiency Power Amplifiers..................... 315
8.1 Class-DE Power Amplifier........................................................................................... 316
8.2 Class-E/F Power Amplifiers......................................................................................... 330
8.3 Biharmonic Class-E Power Amplifier....................................................................... 338
M
8.4 Inverse Class-E Power Amplifiers............................................................................... 344
8.5 Harmonic Tuning Using Load-Pull Techniques.......................................................... 352
References............................................................................................................................ 359
Chapter 9: Computer-Aided Design of Switched-Mode Power Amplifiers........................ 363
9.1 HB-PLUS Program for Half-Bridge and Full-Bridge Direct-Coupled
Voltage-Switching Class-D and Class-DE Circuits..................................................... 363
9.2 HEPA-PLUS CAD Program for Class E..................................................................... 368
9.3 Effect of Class-E Load-Network Parameter Variations.............................................. 371
9.4 HB-PLUS CAD Examples for Class D and Class DE................................................ 375
9.5 HEPA-PLUS CAD Example for Class E.................................................................... 381
9.6 Class-E Power-Amplifier Design Using SPICE.......................................................... 392
9.7 ADS Circuit Simulator and Its Applicability to Switched-Mode Class E.................. 398
9.8 ADS CAD Design Example: High-Efficiency Two-Stage L-Band HBT
Power Amplifier........................................................................................................... 403
References............................................................................................................................ 418
Index...................................................................................................................... 421
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About Andrei Grebennikov
Dr. Andrei Grebennikov, IEEE Senior Member, has obtained a long-term academic
andindustrialexperienceworkingwithMoscowTechnicalUniversityofCommunicationsand
Informatics, Russia; Institute of Microelectronics, Singapore; M/A-COM, Ireland; and
Infineon Technologies, Germany, as an engineer, researcher, lecturer, and educator. He
lecturedasaGuestProfessorattheUniversityofLinz,Austria,andpresentedshortcoursesas
an Invited Speaker at the International Microwave Symposium, European Microwave
Conference, and Motorola Design Centre, Malaysia. He is an author of more than 60 papers,
3 books, and several European and U.S. patents.
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About Nathan O. Sokal
In 1989, Mr. Sokal was elected a Fellow of the IEEE for his contributions to the technology
of high-efficiency switching-mode power conversion and switching-mode RF power
amplification. In 2007, he received the Microwave Pioneer award from the IEEE Microwave
TheoryandTechniquesSociety,inrecognitionofamajor,lastingcontribution—development
of the Class-E RF power amplifier.
In1965,hefoundedDesignAutomation,Inc.,aconsultingcompanydoingelectronicsdesign
review, product design, and solving ‘‘unsolvable’’ problems for equipment-manufacturing
clients. Much of that work has been on high-efficiency switching-mode RF power amplifiers
at frequencies up to 2.5 GHz, and switching-mode dc-dc power converters. He holds eight
patents in power electronics, and is the author or co-author of two books and approximately
130 technical papers, mostly on high-efficiency generation of RF power and dc power.
During 1950–1965, he held engineering and supervisory positions for design, manufacture,
and applications of analog and digital equipment.
HereceivedB.S.andM.S.degreesinElectricalEngineeringfromtheMassachusettsInstitute
of Technology, Cambridge, Massachusetts, in 1950.
Heis aTechnical Adviserto theAmericanRadioRelay League,onRFpower amplifiersand
dcpowersupplies,andamemberoftheElectromagneticsSociety,EtaKappaNu,andSigma
Xi honorary professional societies.
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Preface
Themainobjectiveofthisbookistopresentallrelevantinformationrequiredtodesignhigh-
efficiency RF and microwave power amplifiers, including well-known and novel theoretical
approaches and practical design techniques. Regardless of the different operation classes like
ClassD,ClassE,orClassFandtheircombination,anefficiencyimprovementisachievedby
providing the nonlinear operation conditions when an active device can subsequentlyoperate
in pinch-off, active, and saturation regions resulting in nonsinusoidal collector current and
voltage waveforms—for example, symmetrical for Class-F and asymmetrical for Class-E
modes.Asaresult,thepoweramplifiersoperatedinClassFcanbeanalyzedexplicitlyinthe
frequency domain when the harmonic load impedances are optimized by short-circuit and
open-shortterminationstocontrolthevoltageandcurrentwaveformsatthecollectortoobtain
maximumefficiency.However,thepoweramplifieroperatedinClassEcanbefullyanalyzed
analytically in the time domain when an efficiency improvement is achieved by realizing the
idealon-to-offactivedeviceoperationinpinch-offandvoltage-saturationmodesonly,sohigh
voltage and high current at the collector do not occur at the same time. Unlike the single-
ended power amplifiers operated in Class-F or Class-E modes, a Class-D power amplifier
representsaswitching-modepoweramplifierusingtwoswitching-modeactivedevicesdriven
onandoffsothatoneoftheswitchesisturnedonwhentheotheristurnedoff,andviceversa.
Generally, this book is intended for and can be recommended to practicing RF circuit
designers and engineers as an anthology of a wide family of high-efficiency RF and
microwave power amplifiers based on both well-known and novel switched-mode operation
conditions with detailed description of their operational principles and applications and clear
practical demonstration of theoretical results. To bridge the theoretical idealized results with
real practical implementation, the theory is supported by design examples, in which the
optimum design approaches effectively combine analytical calculations and simulation,
resulting in practical schematics of high-efficiency power-amplifier circuits using different
types of field effect or bipolar transistors.
The introductory Chapter 1 describes the basic principles of power amplifier design
procedures. Based on the spectral-domain analysis, the concept of a conduction angle is
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Preface
introduced with simple and clear analyses of the basic Class A-, AB-, B-, and C-power
amplifiers. Nonlinear models are given for MOSFET, MESFET, HEMT, and bipolar devices
(including HBTs), which have very good prospects for power amplifiers using modern
microwave monolithic integrated circuits. The effect of the device input parameters on the
conduction angle at high frequencies is explained. The concept and design of push-pull
amplifiers using balanced transistors are presented. The possibility of the maximum power
gain for a stable power amplifier is discussed and analytically derived. Finally, the parasitic
parametric effect due to the nonlinear collector capacitance and measures for its cancellation
in practical power amplifier are discussed.
In Chapter 2, the voltage-switching and current-switching configurations of Class-D power
amplifiers are presented, the increased efficiency of which is a result of operating the active
devicesasswitches.Thebasicswitched-modepoweramplifierswithresistiveloadofdifferent
configurations, and the current-switching and voltage-switching configurations based on
complementaryandtransformer-coupledtopologiesareanalyzed.Wedemonstratetheeffects
of the transistor saturation resistance, rectangular and sinusoidal driving signals, nonzero
switchingtransitiontimes,andparasiticshuntcapacitanceandseriesinductance.Wedescribe
practical design examples of voltage-switching and current-switching Class-D power
amplifiers that are intended to operate at high frequencies and microwaves.
Highly efficient operation of the power amplifier can be obtained by applying biharmonic or
polyharmonicmodeswhenanadditionalsingle-resonantormulti-resonantcircuittunedtothe
oddharmonicsofthefundamentalfrequencyisaddedtotheloadnetwork.Aninfinitenumber
of odd-harmonic resonators results in an idealized Class-F mode with a square voltage
waveform and a half-sinusoidal current waveform at the device output terminal providing
ideally 100% collector (or drain) efficiency. Chapter 3 describes the different Class-F
techniques using lumped and transmission-line elements including a quarter-wave
transmission line. The effects of the transistor saturation resistance and parasitic shunt
capacitance are demonstrated. Design examples and practical RF and microwave Class-F
power amplifiers are given and discussed.
An inverse Class-F mode can be obtained by using a single-resonant or a multi-resonant
circuit tuned to the even harmonics of the fundamental frequency added to the load network.
An infinite number of even-harmonic resonators results in an idealized inverse Class-F mode
with a half-sinusoidal voltage waveform and a square current waveform at the device output
terminal. Chapter 4 describes the different inverse Class-F techniques using lumped and
transmission-line elements including a quarter-wave transmission line. Design examples and
practical RF and microwave inverse Class-F power amplifiers are presented.
The switched-mode Class-E tuned power amplifiers with a shunt capacitance have found
widespread application due to their design simplicity and high-efficiency operation. In the
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