Solid-State Electronics 1996: Vol 40 Table of Contents

15 Pages·1996·4.7 MB·English

SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I-8
PROCEEDINGS
OF THE SEVENTH INTERNATIONAL CONFERENCE ON
MODULATED SEMICONDUCTOR STRUCTURES
CONTENTS
scab cabdticaclisseetdiady Hekate detibeas dis sbadnsiinaiedeltieane rei ebtedasiatbeslieiertareptsveerubinbhtiod XVii
Organising Committee, Programme Committee, International Committee and Sponsors XIX
LASERS
W. WEGSCHEIDER, L. N. PFEIFFER, K. W. West, P. LITTLEwWoop, O. NARAYAN, M. HAGN,
M. M. DiGnaM and R. E. LEIBENGUTH: Strong magnetic field dependence of laser emission
from quantum wires formed by cleaved edge overgrowth .............cccccccccceceeeeeeeeceeeeeeeeeees l
MAGNETOTRANSPORT
T. M. FROMHOLD, P. B. WILKINSON, F. W. SHEARD and L. EAVES: Quantum chaotic
CORTE BE) GENE CRRITOOT CURIIINNT SEF UICRUIOTD . 6. cisscs cscs necscciccccccccsccsecccntdesscecesatecccnsanscennsiesi 7
T. ScHMiIpT, M. TEworpt, R. J. HAUG, K. VON KLITZING, A. FORSTER and H. LOUTH:
Single-electron-tunneling spectroscopy of asymmetric laterally confined double-barrier
RI rel cree oT a ade deaths bes ueetouspranignsnonaieiensdiebidbieessieassundbusliabiobeess 15
L. MARTIN-MoRENO, J. H. OAKNIN, J. J. PALACIOS and C. TesEDoR: Charge excitations of
ee ns ED > 2 dd gusndgnectg Buea dbaballeaidauesantcdeodaacdedipsséurvebeqntnes 21
M. WENDEL, H. LORENZ, J. P. KOTTHAUS and M. HOLLAND: Magneto transport on antidot
arrays, fabricated by an atomic fOrce MICFOSCOPE ..............cccceseeeseseessseeeeeeeeeeeseeseeneeeeeeees 25
N. E. Harr, J. A. Simmons and J. F. KLemM: Extreme field-induced cyclotron mass
variations in coupled double quantum wells...............cccccsecseeesseseessenseneeesseeaeseeeeeeeeeeeeeeeees 29
WIDE GAP AND SiGe
D. R. YAKOVLEV: Magneto-optical studies of semimagnetic superlattices...............:c0008 35
F. Issik1, S. FUKATSU, T. OHTA and Y. SHIRAKI: Efficient green luminescence from. a
type-II neighboring confinement structure realized in an AIP/GaP system.................0. 43
G. ST6GER, G. BRUNTHALER, G. BAUER, J. JAROSZYNSKI, M. SAWICKI, T. DiETL and
F. SCHAFFLER: Metal-—insulator transition in Sb-doped short period Si/SiGe superlattices 47
—continued
INDEXED IN Res. Alert, Cam. Sci. Abstr.. Chem. Abstr. Serv.. Curr. Cont./Phys. Chem. & Earth Sci.. Curr. Cont./Eng. Tech. & Appl. Sci., Curr. Tech. Indx.
Eng. Indx. INSPEC Data.. PASCAL-CNRS Data.. Curr. Cont. Sci. Cit. Indx, Curr. Cont. SCISEARCH Data., SSSA/CISA/ECA/ISMEC, Mater. Sci. Cit. Indx
ISSN 0038-1101
PERGAMON
SSELAS 40(1-8) 1-824 (1996)
SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I-8
CONTENTS —continued ]
I. A.B UYANOVA, W. M. CHEN, A. HENRY, W.-X. Ni, G. V. HANSSON and B. MONEMAR:
Optical properties of boron modulation-doped SiGe quantum wells and Si thin films 53
W. Heiss, E. GornNIK, C. R. PIDGEON, S.-C. LEE, I. GALBRAITH, B. MurRpIN, C. J. G. M.
LANGERAK, M. HELM, H. HERTLE and F. SCHAFFLER: Intersubband lifetimes in Si/SiGe
NN Enos ks hac dil bakonnbdeibciinsg heubirebiechesbarnsaensicecghboaciddescltsesnadtepbenaccdheot s 59
QUANTUM WELLS, SUPERLATTICES AND NEW SYSTEMS
D. SCHIKORA, TH. WIDMER, C. PRotTT, K. LISCHKA, G. MACHEL, P. SCHAFER, S. LUTHER
and M. VON ORTENBERG: Growth and properties of HgSe:Fe quantum wells and
I atts chevtsth ncn csnthacapabienbeitlts conectllial bs cusisaaudagutesiesevieiedsnh enipiankalaiaaanieidedbeqotulannte 63
H. H. CHENG, R. J. NICHOLAS, M. J. LAWLEss, D. E. ASHENFORD and B. LUNN: Magneto-
optical studies of the type I/type II crossover and band offset in ZnTe/Zn,_,Mn,Te
superiattices mm magnetic flelds. Up tO 45 T oi.cccisicciis.ccsccccscscecsencccssesvisoescsddavsdebecnssebtocsebeiad 69
H. ULMER-TUFFIGO, F. KANy, J. M. HARTMANN, G. FEUILLET and J. L. PAUTRAT:
Spectroscopic observation of magnetic MnTe submonolayer insertions in II-VI hetero-
ile reg he to ae oe ah Bd, ee eo i acbabbadshacantasedetcvede hte 75
M. A. SANCHEZ-GaRCIA, F. J. SANCHEZ, F. CALLE, E. MUNOZ, E. CALLEJA, K. S. STEVENS,
M. KINNIBURGH, R. BERESFORD, B. BEAUMONT and P. GIBART: Optical and electrical
characterization of GaN layers grown on silicon and sapphire substrates..................... 81
V. BELLANI, E. PEREZ, S. ZIMMERMANN, L. VINA, R. HEY and K. PLooG: Modulation of
Fano resonances by an external magnetic field in semiconductor quantum wells ......... 85
A. C. FERREIRA, P. O. HOLTZ, B. E. SERNELIUS, A. BUYANOV, B. MONEMAR, U. EKENBERG,
O. MAurRITZ, M. SUNDARAM, K. CAMPMAN, J. L. MERZ and A. C. GossarD: Optical studies
of acceptor centre doped GaAs/AlGaAs quantum wells................cccccccccceeceeeeeeeeeesereteeees 89
J. Kono, S. T. Lee, M. S. SAciB, G. S. HEROLD, A. PETROU and B. D. MCComBE:
Optically detected impurity D° and D~ transitions in GaAs quantum wells................. 93
I. N. YASSIEVICH, K. SCHMALZ, M. A. ODNOBLYUDOV and M.S. KAGAN: Two-dimensional
A®* states in boron doped SiGe quantum structures ...............ccccccceeeeeeeecceeeeeeeeeeeeeeeeeeeeees 97
F. J. RoDGRIGUEZ and C. TEJEDOR: Fermi-edge singularities in the optical emission of
GOWOG GiITOSt AME MMATOCt. GURMCUI WUE ssi. coos cscs cccdisdéccccccccccsscscsctccsescdscsscccandbacvecsedssees 101
G. BRUNTHALER, C. PENN, T. SusKI, P. WISNIEWSKI, E. LITWIN-STASZEWSKA and
K. KOHLER: Influence of spatial doping correlation on scattering times studied in gated
and ungated GaAs/AlGaAs quantum wells under hydrostatic pressure.....................00 105
P. VICENTE, A.R AYMOND, M. KAMAL SAADI, B. COUZINET, M. KuBisa, W. ZAWADZKI and
B. ETIENNE: Conduction electrons bound to magneto-donors and magneto-acceptors in
IE NID 200i os caving case vobbetisecndcocctabebdipiedaubanponrageksssitedassGlvittoss(ickencs 109
—continued
SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I-8
CONTENTS —continued ]
M. HARTUNG, A. WIXFORTH, K. L. CAMPMAN and A. C. GossarD: The effect of resonant
sublevel coupling on intersubband transitions in coupled double quantum wells.......... 113
J. Los, A. FASOLINO and A. CATELLANI: Band structure of strained quantum wells grown
ee SY IN cadence ti odecssiiediscidhtssctahdcibdasduperensteeesBencehiliishdtwinvideicsivedibioseesstesooents 117
S. ZANIER, Y. GULDNER, J. M. BERROIR, J. P. VIEREN, I. SAGNES, Y. CAMPIDELLI and
P. A. BApDoz: Infrared absorption in p-type SiGe/Si quantum wells: intersubband
GHOMSTEROE OG THOR CUUTIET, CUUURTUIUREROIIE n.d cits sinc eccchckcbecudaoceecrcbiccctecccbibscsdececosccnsovcneccoses 123
D. RICHARDS, B. JUSSERAND, G. ALLAN, C. PRIESTER and B. ETIENNE: Electron spin—flip
Raman scattering in asymmetric quantum wells: spin orientation....................:cccceeeeeeeee 127
H. SCHNEIDER and E. C. LARKINs: Electron capture in AlGaAs/AlAs/GaAs double-
barrier quantum well structures: tunneling versus intervalley scattering ........................ 133
A. TRUBY, M. POTEMSKI and R. PLANEL: Magnetic field effects in the luminescence spectra
of type II GaAs/AIAs double layer structures...............cccccccccecseeceeeeececeeeceeeeeeeeeeeeeeeeeeeeees 139
S. C. SHEN, W. Z. SHEN, W. G. TANG, Y. ZHAO and A. Z. Li: Growth and optical
investigation of quaternary GalnAsSb/AlGaAsSb quantum wells....................ccceeeeeeeeees 143
B. VINTER and L. THIBAUDEAU: Time-dependent study of the photoionization of an
electron out of a quantum well in an electric field ..........cee. eee.ee.eee.ee.eee.ec.eee.cee.eeceeeceeceee s 149
S. MURUGKAR, R. MERLIN, S. H. Kwok, H. T. GRAHN and R. Hey: Correlation between
intersubband Raman scattering and electric-field domains in quantum-well structures 153
J. KAsTRUP, H. T. GRAHN, K. PLOOG and R. MERLIN: Oscillating electric field domains
Se oF sesnanadectisonsbbostetvepbingimensbecedbateyiiuitassbidocnssrescosinaulibes 157
L. L. BONILLA, O. M. BULASHENKO, J. GALAN, M. KINDELAN and M. Moscoso: Dynamics
of electric-field domains and chaos in semiconductor superlattices .................cccccceeeeeeeee 161
D. W. Peccs, M. S. SKOLNICK, D. M. WuITTAKER, R. A. Hoaca, A. R. K. WILLCOx,
D. J. Mowsray, R. Grey, G. J. REES, L.H ART, M. HOPKINSON, G. HILL and M. A. PATE:
Wannier-Stark ladder spectra in In,Ga,_,As-GaAs strained layer piezo-electric super-
SITET asdiBE aitondid nidaiadhah deberatinte chundGesicepedgaditimnceinsiinbaptacearescniindanhtnectetiialasstaddieatatatians 167
H. Mimura, M. Hosopa, K. TOMINAGA, T. WATANABE and K. Fustwara: Absorption
saturation mechanism in short-period GaAs/AIAs superlattice self-electrooptic effect
devices based on Wannier—Stark localization .................ccccccssssssssssssccccceccscecscsecsessssscseeees 171
P. CASTRILLO, G. ARMELLES and J. BARBOLLA: Consequences of interface corrugation on
the lattice dynamics and Raman spectra in high-index AlAs/GaAs superlattices.......... 175
R. J. NICHOLAS, Y. SHIMAMOTO, Y. IMANAKA, N. Miura, N. J. MASON and P. J. WALKER:
Interface and layer thickness dependence of the effective mass in InAs/GaSb super-
lattices studied by high field cyclotron resomance.................cccccceseeeseeeeeesssseeeeeeseeeneneneneees 181
—continued
SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I-8
CONTENTS —continued ]
P. GassotT, L. DmMowsk1, M. EREMETS, F. ARISTONE, B. GoutTierRs, J. L. GAUFFIER,
D. K. Maupe, J. F. PAcLMrer, J. C. PorTAL, J. C. HARMAND and F. MOLLort: Short
period superlattices under hydrostatic pressure ...................sssssseesssceseeceeseeseeseesseeeeeeeeeenees 185
L. C. LEw YAN Voon, M. WILLATZEN, P. V. SANTOS, M. CARDONA, D. MUNZAR and
N. E. CHRISTENSEN: Investigation of inversion-asymmetry effects on the band structure
ee RIOR esac e cep dates rads vnie svcdcddapeiorctbeotesaceidssts obceVneidelitichasspbelncnbedcdecoicteen s 19]
Z.H. Lu, D. J. Lockwoop and J.-M. BARIBEAU: Visible light emitting Si/SiO, superlattices 197
D. RICHARDS, H. HUSKEN, D. BANGERT, H. P. HUGHEs, D. A. RITCHIE, A. C. CHURCHILL,
M. P. GrRiMsHAW and G. A. C. JoNgEs: Plasmon dispersion for a modulated two-
NO OR SG ea cll seach ousch smtaeinpscasbdnlavepaglibinentiiveesiocssiteccesesenssis 203
G. CHIAPPE, M. A. DAviDovicH and E. V. ANDA: Tunneling currents in mesoscopic rings 209
M. V. BUDANTsSEV, Z. D. Kvon, A. G. PoGosov and A. E. PLOTNIKOv: Transport
anomalies in electron billiards with a lack of Symmetry .................cccccceeeseeeeceeeeeeeeeeeeeeees 213
H. A. CARMONA, A. NOGARET, A. K. Germ, P. C. Main, T. J. FOSTER, M. HENINI,
S. P. BEAUMONT, H. MCLELLAND and M. G. BLAMIRE: Two-dimensional electrons in a
nn ANNIE sid anicedvacbdahebanssicndvnn dma shidebcanstgnneynceushotosipeisisadtelauiantscieliapiadndadees 217
R. Tsu, A. Fittos, C. LOFGREN, D. CAHILL, J. VAN NOSTRAND and C. G. WANG:
PU GTCRRERE TA/D, BUDOTOMUNIID DOT TICE occas cn riscetVaosnetdsencncsscsccsenscivccescoccsndnvesecbutvncnccesecs 221
TRANSPORT AND TUNNELLING
A. YAcoBY, M. HEIBLUM, D. MAHALU and H. SHTRIKMAN: Coherence and phase sensitive
Ean wi SINS MINE Ao cock 4sLo ces ep acdcvadidendapevnebsdnauebvchehsstebbashSnscldgisiessnseysccaciece 225
M. GRAYSON, ©. KURDAK, D. C. Tsul, S. PARIHAR, S. LYON and M. SHAYEGAN: Novel
cleaved edge overgrowth structures for tunneling into one- and two-dimensional electron
SITE: 4iin cb\<ulhi di MaNONaE Uicinsdr seks consonhes tanh Moers desastiniaupeanabates banda tnnhina ehialetbtnmegeatbabennensonesésssensess 233
D. G. AUSTING, T. HONDA and S. TARUCHA: Single electron charging and single electron
tunneling in sub-micron AlGaAs/GaAs double barrier transistor structures ................. 237
D. E. BREHMER, KAI ZHANG, CH. J. SCHWARZ, S.-P. CHAU, S. J. ALLEN, J. P. IBBETSON,
J. P. ZHANG, A. G. PETUKHOv, C. J. PALMSTROM and B. WILKENS: Resonant tunneling
through rare earth arsenide, semimetal quantum wells ...............ccccccccccceceeeeeeeeeeeeeeeeeseeees 241
H. NAGASAWA, K. MURAYAMA, M. YAMAGUCHI, M. MoriFusi, C. HAMAGUCHI,
A. Dt CarLo, P. VoGLt, G. BOHM, G. TRANKLE and G. WEIMANN: Wannier-Stark
I SURI UNI SIUC, 5... ss. usdasncchecevosneesbancassnrssscarescococescocsseeree 245
WIRES
F. Rossi, E. MOLINARI, R. RINALDI and R. CINGOLANI: V-grooved quantum wires as
prototypes of 1D-systems: single particle properties and correlation effects .................. 249
—continued
SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I1-8
CONTENTS—continued ]
C. KiENER, L. ROTA, K. TURNER, J. M. FREYLAND, A. C. MACIEL, J. F. RYAN, U. MARTI,
D. MARTIN, F. MortER-GEMOUD and F. K. REINHART: 3D-to-1D carrier scattering in
RE RET ie FLEES DCE LENOE TORR SANE Ta Oe eee TET SLT oD Oe
C. DAHL, B. JUSSERAND and B. ETIENNE: Raman scattering by plasmons in deep etched
Ne I Pha sscticcnpnligeticinusareesdbolindiseteenesscidelohepies Mibtesdlsteaphaynuetnacorciblibestsecensipidsutimesxcesys
P. H. BETON, A. BLACKBURN, B. R. A. Neves and D. J. Ropsins: Fabrication of Si
nanostructures by controlled sidewall Oxidation .................ccccccceeeeeeseeecceseeeeeceeeeeceseeeeeeees
L. SFAXx1, F. LELARGE, F. Petit, A. CAVANNA and B. ETIENNE: Band gap opening and
charge modulation in AlGaAs lateral structures obtained by organized epitaxy...........
OPTICAL EXCITATION
A.J. SHIELDS, M. PEPPER, M. Y. SIMMons and D. A. Ritcuie: Evolution of GaAs quantum
well excitons with excess electron density and magnetic field ..................ceeeeeeeeeeeeeees 275
J. WAGNER, J. SCHMITZ, D. RICHARDS, J.D . RALSTON and P. KoIDL: Intersubband Raman
I O RORPA FAtrr WII NII cicas ciesniicccaticcpeopbsensnaanchscdnqundsovenetpeiesesntvibeqebeaions 281
K. H. WANG, M. Bayer, P. Its, A. FORCHEL, S. BENNER, H. HAUG, PH. PAGNOD-ROSSIAUX
and L. GOLDSTEIN: Many body effects in the luminescence of Ino; ;G ag4 ,A s/InP quantum
lig ed ae AA ie ie OE ok a dee haaindinnebpiddpiasstlokebioahseiedingebepiticcseqsdaihe s 287
A. S. PLAuT, A. PINczZUK, B. S. DENNIS, J. P. EISENSTEIN, L. N. PFEIFFER and K. W. WEsT:
Light-scattering determination of electron tunneling gaps in double quantum wells..... 291
J. INARREA and G. PLATERO: A.c. field assisted current in GaAs-AlGaAs superlattices 295
S. HAACKE, M. Hartic. D. Y. OBERLI, B. DEVEAUD, E. KAPON, U. Marti and F. K.
REINHART: Carrier transfer and capture into quantum wire arrays grown on V-groove
NK dircicth da strdachs udbgntbaeiackoblbhseibasavcensinadgdhcdcehisbctwadlliegeiadhs svoaibsdiuinetedecsianbainvasihngtinleee s 299
TRANSPORT, WIRES, DOTS AND DEVICES
Y. OHNO and H. SAKAKI: Gate-controlled modulation of electronic states and conduc-
tance in coupled quantum wells having an in-plane periodic potential.....................0 303
B. DietRicH, E. BUGIEL, H. FRANKENFELDT, A. H. HARKER, U. JAGDHOLD, B. TILLACK
and A. Wo FF: Strain measurement in thin pseudomorphic SiGe layers of submicron
Se ee CI aio iiiisn. -ccctsiensincuiesnendasigansbenduaceticeutniiacsdbaciacstanguedtbonndiacte 307
A. O. Govorov: Effects of Coulomb interaction in the magneto-capacitance of quantum
UND sdalbessctenids anngdthc lateonesnvieejnehnncsccleintennniiiiaiandndeaadttieasdatsenendintdadevissaicnnnhtiabiabionliei ea 311
T. Someya, H. AKlyYAMA, M. YAMAUCHI, H. SUGAWARA and H. SAKAKI: Effect of lateral
confinement on excitonic wavefunctions in T-shaped edge quantum wires.................... 315
—continued
SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I1-8
CONTENTS — continued ]
H. NAKASHIMA, M. TAKEUCHI, K. KimurA, M. IWANE, HU KUN HUANG, K. INOUE,
J. CHRISTEN, M. GRUNDMANN and D. BIMBERG: Photo- and cathodoluminescence of
AlGaAs single quantum wires on vicinal GaAs (110) surfaces.................ccccclcceeeeeeeeeeees 319
M. Tornow, D. Weiss, K. v. KLITZING, T. SHITARA, A. KURTENBACH and K. EBERL:
Magnetotransport phenomena in single AlGaAs/GaAs quantum wires grown on laterally
a ocho ci RAMI EL dt hacia Loded esse diideeptbbawuarcabetesscbdkahcebngniaseieicsi<avdsbeonnraen s 323
M. RAMSTEINER, R. KLANN, L. DAweritz, R. Hey, H. KostiAL and G. JUNGK:
Photoluminescence enhancement induced by near surface Si doping wires in GaAs..... 329
V. RoBKopr, P. AvER, E. GORNIK, R. STRENZ, G. ABSTREITER, G. BOHM and G. WEIMANN:
Far-infrared-study of shallow etched quantum wires on high mobility GaAs/AlGaAs
ES SOR IIE LN ME CR HI CES RE Oe TD 333
D. J. Lockwoop, P. HAwryLak, P. D. WANG, Y. P. SONG, C. M. SOTOMAYOR TORRES,
M. C. HOLLAND, A. PINCZUK and B. S. DENNIs: Inelastic light scattering from electronic
excitations in deep-etched quantum dots and WITS .............cccccecceccecceceeececeeeeeceteeseeeeceeees 339
P. A. Knipp and T. L. REINECKE: Electron scattering from acoustic phonons in quantum
Se Ne Mossad cde tics ccke sees. <-rccctthpiabteeecbesemssesiucnasssotsenlgnlaalebasssabpeabbecestect 343
T. H. Stoor and G. E. W. Bauer: Density-functional theory of quantum dots in the high
DBR SRE) ANE ROTEE PRL RO: SF SP Me Pe DOL OROPR RR eges)* SORRROTE reg a: SigeM P 349
A. A. Bykov, L. V. Litvin, S. P. MOSHCHENKO and E. B. OL’SHANETSKII: Two types of
mesoscopic fluctuations in a high magnetic field due to bulk and boundary diffusion 353
M.-E. PistoL, P. CASTRILLO, D. HESSMAN, S. ANAND, N. CARLSSON, W. SEIFERT and
L. SAMUELSON: Band-filling in InP dots: single dot spectroscopy and carrier dynamics 357
F. BOGANI, L. CARRARESI, R. MATTOLINI, M. CoLtocci, A. BOSACCHI and S. FRANCHI:
Relaxation and recombination in ultrasmall InAs quantum dots...................cccceeeeeeeeeees 363
B. KOWALSKI, P. OMLING, M. S. MILLER, S. JEPPESEN and L. SAMUELSON: Level crossing
of nanometer sized InAs islands in GAAS ......i:..c0c....,cesecsccscccssscnccsecssesonssocccccssosccccceseonees 367
V. Hoty, A. A. DARHUBER, G. BAUER, P. D. WANG, Y. P. SONG, C. M. SOTOMAYOR TORRES
and M. C. HOLLAND: Elastic strains in GaAs/AlAs quantum dots studied by high
NE a ag as Sai ie al ose Sahil llth Salaehilabehmpyysnecedeceniaede 373
H. WEMAN, H. KAMADA, M. PoTEMSKI, J. TEMMYO, R. NOTZEL and T. TAMAMURA:
Magneto-optical properties of self-organized strained InGaAs quantum disks.............. 379
Y. S. TANG, C. M. SotomMayor Torres, S. NiILsson, B. DIETRICH, W. KISSINGER,
T. E. WHALL, E. H.C. PARKER, H. PRESTING and H. KIBBEL: Residual strain in Si-Si,_ , Ge,
I cncinndntdeccastadle Astasceedh idlinlncedidaearcihsxseovediensibaviddubeavcksoodhivodebescacscedcbbaaleehnsce se 383
—continued
SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I-8
CONTENTS —-continued ]
B. BRILL and M. HeErBLum: Cyclotron oscillations in a tilted magnetic field: a tool to
measure the mean free path of ballistic electrons in high purity GaAs.........................
G. V. CHURAKOV, Yu. L. IVANov, V. M. Ustinov, A. E. ZHUKOv and A. Yu. EGorov:
Intersubband far-infrared emission and magnetotransport of 2D hole gas in a strong
in-plane electric field and transverse magnetic fields «2.2.00... ccceceeeeeeeceeeeeeeeeeeeeeeeeeees
A. De Keyser, R. BOGAERTS, V. C. KARAVOLAS, L. VAN BOCKSTAL, F. HERLACH,
F. M. PEETERS, W. VAN DE GRAAF and G. BorGHs: Interplay of 2D and 3D charge carriers
in Si-d-doped InSb layers grown epitaxially On GaAS 00... cceeeeseeeeeeeeeeeeeeeeeeeeeneeees
A. MATSUMURA, J. M. FERNANDEZ, T. J. THORNTON, S. N. HOLMEs, J. ZHANG and
B. A. Joyce: Magnetotransport of two-dimensional electron gas in Si/SiGe modulation
doped structures grown by gas source molecular beam epitaxy ..............cccccceeeeeeeeeeeeeeees 399
D. TO6BBEN, D. A. WHARAM, G. ABSTREITER, J. P. KOTTHAUS and F. SCHAFFLER: Quantized
conductance in a Si/Si,,;Ge,, split-gate device and impurity-related magnetotransport
INGO. OUI Site no ashed ad ensipdeabn etait ekabbaeeventbensphigsgapanbbeckstaasivebGirpiseresenasiiensée} 405
P. MCDONNELL, T. J. Foster, P. C. Main, L. EAves, N. Mort, J. W. SAKAI, M. HENINI and
G. HILL: Mesoscopic conductance fluctuations in impurity-assisted resonant tunnelling 409
N. TURNER, J. T. NICHOLLS, E. H. LINFIELD, K. M. BROWN, M. Pepper, D. A. RITCHIE and
G. A. C. JONES: Temperature studies of the tunnelling between parallel two-dimensional
IY IIIT chs Cisc odeteninapdnctiditondnasnalbandovscsabepabemtessipedschdinedeinietsens drresepebiahelenbessasneteestsebbenses 413
S. SHIMOMURA, K. SHINOHARA, K. KASAHARA, T. MOTOKAWA, A. ADACHI, Y. OKAMOTO,
N. SANo and S. HryAmizu: GaAs/A;Gal, ,A s resonant tunneling diodes with atomically
flat interfaces grown on (411)A GaAs substrates by MBE......... cc cccccececeeeeeeeeeeeeeeeenees 417
G. BLANKE, A. LorkKE, J. P. KOTTHAUuS, J. H. ENGLISH, A. C. GOSSARD and P. M. PETROFF:
Photon-assisted tunneling in coupled double quantum wells ..............:ccccccccceecceeeeeeeeeeeees 421
R. FERREIRA: Tunneling in double quantum wells with scatterings: a density matrix
SS ie nile dick ot Bac lanh ins Plalctnaciiatengs sinigiiiigsdopidlint thateveonlgnignptengsehle abevanebcaeea ellie 425
M. HaGn, A. ZRENNER, G. BOHM and G. WEIMANN: Electric-field-induced exciton
CFERSPOLE IF COUDIOW QUANTUM WEI] SIFUCTUTES ......csccsccccecvcescescccccccscesecccesssessecesensnocnsesecess 429
E. Diez, A. SANCHEZ and F. DOMiINGUEZ-ADAME: High conductance in random super-
IIe NE, NGS GENIE Seba cciisdbidccctceesicecscteistupdnsce eceseoctassyotensenatonvendepecsuensagibibine shed 433
R. CINGOLANI, R. RINALDI, M. DE Vittorio, A. Cota, L. VASANELLI, U. MARTI and
F. K. REINHART: Current bistability in InGaAs quantum wire p-i-n heterostructures... 437
G. M. Gusev, X. KLEBER, U. GENNSER, D. K. MAupbe, J. C. PoRTAL, D. I. LUBYSHEV,
P. BASMAJI, M. DE P. A. Sitva, J. C. Rossi, Yu. V. NASTAUSHEV and M. R. BAKLANOV:
Oscillation of the scattering time in a 2D electron system with oval antidots............... 44|
—continued
SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I-8
CONTENTS —continued ]
A. NoGareT, M. J. Gompertz, P. C. Main, L. EAves, M. HENINI, T. J. FOSTER,
S. P. BEAUMONT and H. MCLELLAND: Resonant magnetotunnelling spectroscopy of
I CITA carck isl ANE SLE L i vei pndeetditnarunipapectiestecns nobthuredboreciieapiavnenedbbannpdiBiswleseos 447
J. Couturier, J. C. HARMAND and P. VoIsIN: Investigation of low power all-optical
bistability in an InGaAs-InAIAs superlattice... ccceeeeecceeeeeeeeeeeeeeeeeeeeeeeeeeeeeeeeeees 453
K. ToMINAGA, M. Hosopa, T. WATANABE and K. FusrwaRa: Transparent self-electro-
optic effect device based on Wannier-—Stark localization in unstrained In,Ga,_,As/
In,Al,_,»As superlattices on GaAs SUDStrate ..........:ccccsccccccccasessvccccccsessosessccnecsscssesooecesesees 459
I. IZPURA, J. F. VALTUENA, J. L. SANCHEZ-ROJAS, A. SACEDON, E. CALLEJA and E. MUNOZ:
Transient negative photocurrent and out-of-well dipole kinetics in novel piezoelectric
InGaAs/GaAs MQW pin diodes .................:cccccceececeeeeeeeeeeeeseeeeeeeeeeeeeeneees NE ae 463
S. SUCHALKIN, YU. VASILYEV, YU. IVANOv, S. IVANOV, S. Kop’EV, B. MELTSER and
T. OHYAMA: Application of quantum Hall devices for FIR detection.......................066 469
E. Hapgi, J. BLeusE, N. MAGNEA and J. L. PAUTRAT: Resonant cavity light emitting diodes
SN ee I sn. aconc ushicassnegsianinin vaahiish ndtapen tise laaen nin dbdvabslnapnngiegvcssenianaiceidaeboteivninl s 473
NEW OPTICAL DEVICES AND MICROCAVITIES
D. R. BAIGENT, F. CACIALLI, N. C. GREENHAM, J. GRUNER, H. F. WITTMANN, R. H. FRIEND,
S. C. Moratti and A. B. Hotmes: Light-emitting diodes fabricated with conjugated
SI NIIIETE oie > coals dochshanititseaaseld eteaahchba Siiebcbahaepe dsiteni nidatlgpieybecdteintaeibatithisneentaahanlibatic e 477
J. BLocH, V. THIERRY-MIEG, R. PLANEL, B. SERMAGE, S. LONG and I. ABRAM: Nonguiding
semiconductor microcavity: exciton-photon mode splitting and photoluminescence
SI snicib dscnccstbeccumabeationts adpsebeisedetaacthdiitinnnsnsivtintseldnsisidtahddaasbisnicndaiapaaoasbeicceeht ndiiant e 487
T. A. FISHER, A. M. AFSHAR, M. S. SKOLNICK, D. M. WHITTAKER, J. S. ROBERTS, G. HILL
and M. A. Pate: Electro-optic tuning of vacuum Rabi coupling in semiconductor
IG MIR. TOUTE ayia il pbi sins wcecdsnccasnsansvdbslabbdernccbedtusenddivaiaeserddvinsnceeneveess 493
J. TIGNON, P. Voisin, J. WAINSTAIN, C. DELALANDE, M. Voos, R. HouprRE, U. OESTERLE and
R. P. STANLEY: Semiconductor microcavity under magnetic field: from the weak coupling
Rr Sn CII I oo is atcccekocels csccddunscoancatetbnseblesdbscidesevesavantuvbeabsbcsocshbobinboosecsed 497
H. Mimura, T. MATSUMOTO and Y. KANEMITSU: Light emitting devices using porous
ee EY MIEN QUITU IND SILA Ueccd nearsc rndscicgesudecivecctcdecidnctehss vedtievqosocsestscesapbabbessiesioss 501
DEVICES AND APPLICATIONS
N. YOKOYAMA, S. Muto, K. IMAMURA, M. TAKATSU, T. Mori, Y. SUGIYAMA, Y. SAKUMA,
H. NAKAO and T. ADACHIHARA: Quantum functional devices for advanced electronics 505
M. REZNIKOV, M. HEIBLUM, H. SHTRIKMAN and D. MAHALU: Temporally correlated
transport and suppression of shot noise in a ballistic quantum point contact .............. 513
—continued
SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I-8
CONTENTS—continued ]
T. UeMuRA and T. BaBa: First demonstration of a planar-type surface tunnel transistor
CET-TP e TRUCE TEEROTUINE CURT GOVIOE oie Sais kee ii aioe csce laces cdeccdavideniths 519
F. STERN, S. E. LAuUx and A. KUMAR: Modeling effects of focused ion beams............... 523
LOCAL PROBES
S. H. Kwok, U. JAHN, H. KostTIAL, J. MENNIGER, H. T. GRAHN and K. PLooG: Cathodo-
luminescence imaging of electric-field domains in semiconductor superlattices.............. 527
D. L. ABERNATHY, J. ALS-NIELSEN, S. B. DIERKER, R. M. FLEMING, G. GRUBEL, R. PINDAK,
K. PLooG and I. K. RoBINSON: 1D X-ray speckle patterns: a novel probe of interfacial
ee See een eI - UNTO oh oi cnchcesnncacdevesaescseaenksncecsiuusptsiaenncsceaccesadancapesanbodes 531
H. WATABE, Y. NAGAMUNE, F. SOGAWA and Y. ARAKAWA: Time and spatial resolved
photoluminescence from a single Quantum Ot .................:cccceeeseeeeeeeseeeeeeeeeeceeseeeceeeeeeeeees 537
U. BOCKELMANN, PH. ROUSSIGNOL, A. FILORAMO, W. HELLER and G. ABSTREITER: Time
resolved spectroscopy of single quantum dot Structures ................cccccccceceeeeeeeeeeeeeeeeeeeeees 541
ULTRAFAST SPECTROSCOPY
P. LEISCHING, W. Beck, H. KURZ, K. KOHLER, W. SCHAFER and K. Leo: Nonlinear optical
SONI GG es ENING aii in BLE ia ssc cnc hence letdaebedabectabsdccaksbbiades vatéssdipdbdedbdsbeninteithe 545
T. Dexorsy, R. Ott, P. LEISCHING, H. J. BAKKER, C. WASCHKE, H. G. Roskos,
H. Kurz and K. KOHLER: Time-resolved optical investigations of Bloch oscillations in
SO i ads oc nnnidnipiiond cneqasijoinsi db eng siladvoesececenetaiaidaveeieingedbaieencrcesteaiiliions 551
R. Duer, D. GERSHONI and E. EHRENFREUND: Time resolved photoinduced intersubband
absorption: a novel and powerful way of studying the dynamics of quantum structure
I ansetdal ANA thesis bcisCdetonsii cxadiabagsibdseade peadehibdeabeesbecccnbicndeddcbssetbhehdedabestbecdiotheRbabossiees 555
B. M. ASHKINADZE, E. COHEN, ARZA Ron, E. LINDER and L. N. PFEIFFER: The effects
of photogenerated free carriers and microwave electron heating on exciton dynamics in
CORR Pee GCN WHTIED din ccvnr nicer evncdchndliscinobuctnovncedacsbsbbliassnnsssscinbiatbenddidambedssiiablons 561
H. C. Liu, JIANMENG LI, E. CosTaRD, E. ROSENCHER and J. NAGLE: Sum frequency
generation by intersubband transition in step quantum wells.................ccccssesseeeseeeeeeeeees 567
STRAIN AND PRESSURE
G. SPRINGHOLZ, N. FRANK and G. Bauer: Surface modifications in strained-layer
heteroepitaxy studied by UHV-scanning tunneling MICFOSCOPY .............cccccccseeeeereeeeeeeeees 571
M. Notomi, J. HAMMERSBERG, H. WEMAN, M. PoTEeMSKI, H. SUGIURA, M. OKAMOTO
and T. TAMAMURA: Dimensionality effects on strain for lattice-mismatched InAsP/InP
quantum wires: the relationship betweer. strain and 2D quantum confinement............. 579
—continued
SOLID-STATE ELECTRONICS
VOLUME 40 NUMBERS I-8 1996
CONTENTS—continued ]
J. L. JIMENEZ, E. E. MENDEZ, X. Li and W. I. WANG: Resonant tunneling and intrinsic
bistability in GaSb-based double barrier heterostructures..............ccccccscceecceeseseeeeeeeeeeeeens 583
M. VOLK, S. LUTGEN, T. MARSCHNER, W. STOLZ, E. O. GOBEL, P. C. M. CHRISTIANEN and
J.C. MAAN: Magnetooptical investigations of symmetrically strained (GaIn)As/Ga(pAs)
ENED OVINE Si... .cssssosussieenatedicesvecnniilersscastaceceevescensvonsenehaetcosesecens 585
J. L. SANCHEZ-Rosas, A. SACEDON, A. SANZ-HeRVAS, E. CALLEJA, E. MUNOZ and
E. J. ABRIL: Probing resonant tunneling and charge accumulation via capacitance
measurements in [111]-oriented InGaAs/GaAs MQW and superlattices ........................ 591
D. KINperR, S. L. WonG, A. N. Priest, R. J. NICHOLAS, G. DUGGAN, M. D. Dawson,
S. P. Naspa and A. H. KEAN: Magneto-optical studies of compressively strained
GalInP/AlGaInP multiple quantum wells ....................cccccessesseeseeeceececeeceeesseeeeeeeeceeeeeeeeeeees 597
GROWTH AND SPECTROSCOPY
H. LIpSANEN, M. SOPANEN and J. AHOPELTO: Fabrication and photoluminescence of
quantum dots induced by strain of self-orgamized stressOTs..............ccccccceeeceeeeeeeeeeeeeeeeees 601
O. SCHOENFELD, X. ZHAO, J. CHRISTEN, T. HEMPEL, S. NOMURA and Y. AOYAGI: Formation
of Si quantum dots in namocrystallime SiliCOMm................cccccccccccceceeceeeeeeeeeeeeeeeeeeeeeeeeeeeeeenees 605
M. S. MILLER, S. JEPPESEN, D. HESSMAN, B. KOWALSKI, I. MAxImMov, B. JUNNO and
L. SAMUELSON: Assembling strained InAs islands by chemical beam epitaxy................. 609
A. PONCHET, A. LE Corre, H. L’HARIDON, B. LAMBERT, S. SALAUN, J. GROENEN and
R. CARLEs: Structural aspects of the growth of InAs islands on InP substrate............. 615
T. UTZMEIER, G. ARMELLES, P. A. PostTiGo and F. BRIoNEs: Growth and characterization
of InSb/InP short-period strained-layer superlattices grown by ALMBE...................... 621
M. Lopez, N. TANAKA, I. MATSUYAMA and T. ISHIKAWA: Fabrication of quantum wires
on GaAs substrates patterned by in situ electron-beam lithography .....................00000008 627
K. Fusita, H. OHNISHI, M. Hirai, K. SHIMADA and T. WATANABE: MBE growth of
submicron carrier confinement structures on patterned GaAs(111)A substrates using only
ID schabstribecisisstuctoes Inacastanbtanickseveanbiabhseadketarelctegeaditccuiamiaiasccbedssrabbabodbigsavinlneiseeas 633
D. K. DE VrigEs, H. KONZEL, K. HAUSLER, K. H. PLooG and A. D. Wieck: Lateral
electron depletion in focused-ion-beam implanted pseudomorphic heterostructures with
I as I UA Ee es adinsionnntoandiiodesntcabedninesoateieesabepisaannetlo s 637
A. APARISI, V. FORNES, F. MARQUEZ, R. MORENO, C. LOPEZ and F. MESEGUER: Synthesis
and optical properties of CdS and Ge clusters in zeolite Cages................cccccccceeeeesseeeees 641
A. L. ALVAREZ, F. CALLE, A. SACEDON, E. CALLEJA, E. MUNOz, R. GarRciA, L. GONZALEZ,
Y. GONZALEZ, H. G. CoLson, P. Kipp, R. BEANLAND and P. GooDHEW: Non-uniform
Tn UN OT 1. 1 ss aia amencascontontbanicitepetuicibtensecoassesee 647
—continued