Silicon Optoelectronic Integrated Circuits

365 Pages·2004·4.326 MB·English

by  Professor Dr.-Ing. Horst Zimmermann (auth.)

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Horst Zimmermann
Silicon Optoelectronic
Integrated Circuits
With291Figuresand19Tables
1 3
ProfessorDr.-Ing.HorstZimmermann
Institutfu¨rElektrischeMess-undSchaltungstechnik
TechnischeUniversita¨tWien
Gusshausstraße25/354,1040Wien
Austria
E-mail:[email protected]
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StanfordUniversity,DepartmentofElectricalEngineering,420ViaPalouMall,CIS-205
Stanford,CA94305-4070,USA
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CenterforCollaborativeResearch,UniversityofTokyo,7-22-1Roppongi
Minato-ku,Tokyo106-8558,Japan
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KatholiekeUniversiteitLeuven,ESAT-MICAS,KasteelparkArenberg10
3001Leuven,Belgium
ProfessorDorisSchmitt-Landsiedel
TechnischeUniversita¨tMu¨nchen,Lehrstuhlfu¨rTechnischeElektronik
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ISSN1437-0387
ISBN 978-3-642-07351-9
LibraryofCongressCataloging-in-PublicationData:Zimmermann,Horst,1957-Siliconoptoelectronicinte-
gratedcircuits/HorstZimmermann.p.cm.–(Springerseriesinadvancedmicroelectronics;13)Includes
bibliographicalreferencesandindex.
ISBN 978-3-642-07351-9 ISBN 978-3-662-09904-9 (eBook)
DOI 10.1007/978-3-662-09904-9
1.Integratedcircuits–Designandcon-
struction.2.Optoelectronicdevices.I.Title.II.Series.
TK7874.Z582003 621.3815–dc22 2003057315
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Preface
Sincethebook“IntegratedSiliconOptoelectronics”appearedinthe“Springer
Series in Photonics” in 2000, a whole variety of silicon optoelectronic in-
tegrated circuits (SOEICs) have been developed and introduced in many
journals and conference proceedings. Therefore, a new book on these new
SOEICs collecting and selecting the most interesting ones was highly desir-
ableespeciallybecausethemainpartof“IntegratedSiliconOptoelectronics”
concentrated on integrated photodetectors. This new book, in contrast, de-
scribesconsiderablymorecircuitsimplementedasSOEICstogetherwith the
photodetectors.
Many design engineers in semiconductor companies, ASIC and design
houses have to design SOEICs, OPTO-ASICs, image sensors or even smart
pixelsensors.I also feelthat the number ofPh.D. students or diploma work-
ers doing research and development in the field of optoelectronic circuits is
constantly growing. This book, therefore, is intended as a second bridge (af-
ter“IntegratedSiliconOptoelectronics”)betweenmicroelectronicsandopto-
electronics.Usually, optoelectronics plays a minor role in electricalengineer-
ing courses at universities. Physicists are taught optics but not very much
semiconductor technology and chip design. This book covers the missing in-
formation for engineers and physicists who want to know more about in-
tegrated optoelectronic circuits (OEICs) in silicon technologies and about
their rapidly emerging applications. The low-cost requirement permanently
drives and pushes silicon OEICs in contrast to expensive III/V semiconduc-
tor receiverOEICs. This book reflects this trend by stressingCMOSOEICs.
BiCMOS OEICs with their better performance, however, are also described
in detail, since they are still much cheaper than III/V OEICs.
TheimportanceofOEICsisduetothefollowingadvantagesofmonolithic
optoelectronicintegratedcircuits:(i)goodimmunityagainstelectromagnetic
interference (EMI) because of very short interconnects between photodetec-
torsandamplifiers,(ii)reducedchipareaduetotheeliminationofbondpads,
(iii) improvedreliability due to the elimination of bondpads andbond wires,
(iv) cheaper massproduction comparedto discrete circuits, wire-bondedcir-
cuits, and hybrid integrated circuits, and (v) larger −3dB bandwidth com-
pared to discrete circuits, wire-bonded circuits, and some hybrid integrated
circuits due to the avoidanceof parasitic bondpad capacitances.
VI Preface
This book describes the basics and theory of photodetecors in compact
form. The three chapters on integrated photodectors, thin-film detectors,
and SiGe detectors desribe the properties of photodiodes, which were imple-
mented in the circuits discussed later in this book. The chapter on design
of integrated circuits covers analytical methods for calculating bandwidth.
Methodsforcalculatinginputandoutputresistanceaswellaselectronicnoise
of transimpedance amplifiers were also added. Furthermore, a transmission-
line approach leading to a new π-model for integrated transimpedance am-
plifiers was included.
Inthelastandlongestchapter,newconceptsforDVDandCD-ROMOE-
ICsandnewresultsonthesestilleconomicallymoreimportantkeydevicesfor
optical storage systems were included. The state-of-the-art of fiber receiver
OEICswasupdatedandnewmarketdemandslikeplasticopticfiberreceivers
and burst-mode optical receivers are covered by the description of these re-
ceiver circuits. The key topics systems-on-chip (SoC) and camera-on-chip
(CoC) are included. Within CoCs, revolutionary three-dimensional single-
chipCMOScamerasaredescribed.VariousCMOSandBiCMOSopticalsen-
sor chips are introduced. Several innovative smart-sensor circuits are high-
lighted. Furthermore, speed-enhancement techniques for fiber receivers and
large-area, large-capacitance photodiodes are explained. The general trend
towards deep-sub-micrometer analog-digital CMOS SoCs is considered with
respect to OEICs. Finally, new optical interconnect and free-space receivers
based on the optoelectronic phase-locked loop principle are introduced.
Parts of the book have their origin in the lecture “Optoelectronic inte-
grated circuits” started at Vienna University of Technology in 2001 and in
the lecture “Optoelectronics” I had given from 1994 to 1999 at Kiel Univer-
sity. This book, however, dives much deeper into the topic. The possibilities
of SOEICs are described thoroughly with respect to circuits and some new
integrated detectors like the innovative so-called spatially-modulated-light
detector and the photonic mixer device (PMD) are added. The newest pub-
lications on silicon OEICs up to 2003 are considered.
I would like to thank Prof. Dr.-Ing. P. Seegebrecht from Kiel University,
Germany,whereI beganresearchanddevelopmentonsiliconOEICs,for the
generous possibility to work independently and to acquire the title ‘habilita-
tus’. I am also indebted to Prof. Dr. H. Fo¨ll, who offered a waferprober for
the characterization of the OEICs. The work of the OEIC group members
at KielUniversity, A. Ghazi, T. Heide, M. Hohenbild, K. Kieschnick,and G.
Volkholz, is highly appreciated. Three students, N. Madeja, F. Sievers, and
U. Willecke,carefullyperformedsimulations andmeasurements.M.Wieseke
and F. Wo¨lk helped with the preparation of numerous drawings. Special
thanks go to R. Buchner from the Fraunhofer-Institute for Solid-State Tech-
nology in Munich and H. Pless from Thesys Microelectronics (now Melexis)
inErfurt,Germany,fortheirengagementinthefabricationofCMOSOEICs
and BiCMOS OEICs, respectively. I gratefully acknowledge the funding of
Preface VII
the projects by the German ministry for education, science, research, and
technology (BMBF) within the leading project ‘Optical Storage’.
Atthe Institute forElectricalMeasurementsandCircuitDesign(EMST)
at Vienna University of Technology, I would like to thank my colleague and
head of the institute Gottfried Magerl for his great support towards a quick
start of research. I also have to thank my Ph.D. students M. Fo¨rtsch, J.
Knorr,F.Schlo¨gl,K.Schneider,andR.Swobodafortheir carefuldesignand
characterizationwork.M.Hofer,Ch.Su¨nder,andJ.Wissenwasserdrewmany
newfigures.I further haveto thankG. LangguthandH.Wille fromInfineon
Technologies in Munich, Germany, J. Sturm from Infineon Technologies in
Villach, Austria, as well as A. Martin from Infineon Technologies in Vienna,
Austria,fortheirsupportandconstructivecooperation.Ifurtheracknowledge
funding from the European Commission in the project INSPIRED.
I extend my sincere thanks to Dr. Ascheron and his team at Springer for
the good cooperation and their technical support with the text processor.
My deepest gratitude, however, is directed to my wife and my daugthers,
Luise and Lina, as well as to my son Frieder, who supported this second
book project with their encouragement and patience.
Vienna, August 2003 Horst Zimmermann
Contents
List of Symbols ...............................................XIII
1 Basics and Theory........................................ 1
1.1 Basics of Optical Absorption............................. 1
1.1.1 Photons and their Properties ...................... 1
1.1.2 Optical Absorption
of Important Semiconductor Materials .............. 2
1.1.3 Photogeneration.................................. 4
1.2 Semiconductor Equations................................ 5
1.3 Important Models for Photodetectors ..................... 8
1.3.1 Carrier Drift..................................... 8
1.3.2 Carrier Diffusion ................................. 13
1.3.3 Quantum Efficiency and Responsivity............... 16
1.3.4 Equivalent Circuit of a Photodiode ................. 21
2 Integrated Silicon Photodetectors......................... 25
2.1 Integrated Detectors in Bipolar Technology ................ 25
2.1.1 Bipolar Processes................................. 25
2.1.2 Integrated Detectors in Standard Bipolar Technology . 28
2.1.3 Integrated Detectors in Modified Bipolar Technology.. 31
2.2 CMOS-Integrated Photodetectors......................... 34
2.2.1 One-Well CMOS Processes ........................ 35
2.2.2 Twin-Well CMOS Processes ....................... 35
2.2.3 Integrated Detectors in Standard CMOS Processes ... 36
2.2.4 Spatially-Modulated-Light Detector................. 41
2.2.5 PIN Photodiode.................................. 43
2.2.6 Charge-Coupled-Device Image Sensors .............. 58
2.2.7 Active-Pixel Sensors .............................. 62
2.2.8 Amorphous-Silicon Detectors ...................... 66
2.2.9 CMOS-Integrated Bipolar Phototransistors .......... 68
2.2.10 Photonic Mixer Device............................ 71
2.3 BiCMOS-Integrated Detectors ........................... 72
2.3.1 BiCMOS Processes ............................... 72
2.3.2 BiCMOS-Integrated Photodiodes................... 79
X Contents
3 Detectors in Thin Crystalline Silicon Films ............... 87
3.1 Photodiodes in Silicon-on-Insulator ....................... 87
3.2 Silicon on Sapphire ..................................... 92
3.3 Polyimide Bonding ..................................... 93
4 SiGe Photodetectors...................................... 95
4.1 Heteroepitaxial Growth ................................. 95
4.2 Absorption Coefficient of SiGe Alloys ..................... 96
4.3 SiGe/Si PIN Hetero-Bipolar-TransistorIntegration ......... 96
5 Design of Integrated Optical Receiver Circuits............ 101
5.1 Circuit Simulators and Transistor Models.................. 101
5.2 Layout and Verification Tools ............................ 106
5.3 Design of OEICs ....................................... 107
5.4 Transimpedance Amplifier ............................... 110
5.4.1 Frequency Response .............................. 111
5.4.2 Phase and Group Delay ........................... 115
5.4.3 Stability and Compensation ....................... 118
5.4.4 Bandwidth
of Transistor Transimpedance Amplifier Circuit ...... 118
5.4.5 Bandwidth Limit
of Integrated Transimpedance Amplifiers ............ 121
5.4.6 New π-Model
for Integrated Transimpedance Amplifier ............ 123
5.4.7 Shunt-Shunt Feedback ............................ 133
5.4.8 Input and Output Resistance ...................... 137
5.4.9 Noise and Sensitivity ............................. 139
6 Examples of Optoelectronic Integrated Circuits........... 147
6.1 Digital CMOS Circuits.................................. 147
6.1.1 Synchronous Circuits ............................. 147
6.1.2 Asynchronous Circuits ............................ 153
6.2 Digital BiCMOS Circuits................................ 155
6.3 Laser Driver Circuits.................................... 155
6.4 Analog Circuits ........................................ 158
6.4.1 Bipolar Circuits.................................. 159
6.4.2 Two-dimensional CMOS Imagers ................... 162
6.4.3 Optical Distance Measurement Circuits ............. 172
6.4.4 Three-dimensional CMOS Cameras ................. 176
6.4.5 Smart Pixel Sensors .............................. 179
6.4.6 CMOS Optical Sensors............................ 192
6.4.7 BiCMOS Optical Sensors.......................... 208
6.4.8 CMOS Circuits for Optical Storage Systems ......... 212
6.4.9 BiCMOS Circuits for Optical Storage Systems ....... 222
6.4.10 Continuous-Mode Fiber Receivers .................. 240
Contents XI
6.4.11 Receiver for Wireless Infrared Communication ....... 283
6.4.12 Hybrid Receivers ................................. 291
6.4.13 Speed Enhancement Techniques .................... 293
6.4.14 Plastic-Optical-Fiber Receivers..................... 306
6.4.15 Burst-Mode Optical Receivers...................... 310
6.4.16 Deep-sub-μm Receivers............................ 314
6.4.17 Comparison of Fiber Receivers ..................... 317
6.4.18 Special Circuits .................................. 320
6.5 Summary.............................................. 324
References.................................................... 325
Index......................................................... 347