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Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals PDF

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Materials Science GS Silicon, Germanium, and Their Alloys ri o l wi c Growth, Defects, ImpurItIes, anD nanocrystals t ho , Edited by Gudrun Kissinger and Sergio Pizzini Dn e, f G “This book gives the state of the art in understanding and tailoring point e c defects in group IV semiconductors. The reader will find useful and com- e t plete information about the mechanisms of formation, migration, and sr interaction of intrinsic and extrinsic point defects in Si, Ge, and SiGe ,m I alloys. This is a unique feature of this work, as it offers the possibility of m comparing the peculiar behavior of Si, Ge, and related alloys under one pa single cover.” un r —Professor Roberto Fornari, Ii tu Department of Physics and Earth Sciences, University of Parma, Italy I em s “This book is organized well and written by experts with high international , reputation. … It is an excellent reference for engineers, researchers, and a, students.” na D n —Professor Deren Yang, n State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, China ad n oT Despite the vast knowledge accumulated on silicon, germanium, and their alloys, ch these materials still demand research, eminently in view of the improvement of r knowledge on silicon–germanium alloys and the potentialities of silicon as a ye substrate for high-efficiency solar cells and for compound semiconductors and si tr the ongoing development of nanodevices based on nanowires and nanodots. a lA s Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and l Nanocrystals covers the entire spectrum of R&D activities in silicon, germa- l o nium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium y nanocrystals. s World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization prob- lems, theoretical modeling, crystal defects, diffusion, and issues of key appli- Kissinger cative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the Pizzini measurement of materials quality. K20303 6000 Broken Sound Parkway, NW Suite 300, Boca Raton, FL 33487 711 Third Avenue an informa business New York, NY 10017 2 Park Square, Milton Park www.taylorandfrancisgroup.com Abingdon, Oxon OX14 4RN, UK CAT#K20303 cover.indd 1 11/3/14 9:22 AM Silicon, Germanium, and Their Alloys Growth, Defects, ImpurItIes, anD nanocrystals Silicon, Germanium, and Their Alloys Growth, Defects, ImpurItIes, anD nanocrystals Edited by Gudrun Kissinger Sergio Pizzini Boca Raton London New York CRC Press is an imprint of the Taylor & Francis Group, an informa business CRC Press Taylor & Francis Group 6000 Broken Sound Parkway NW, Suite 300 Boca Raton, FL 33487-2742 © 2015 by Taylor & Francis Group, LLC CRC Press is an imprint of Taylor & Francis Group, an Informa business No claim to original U.S. Government works Version Date: 20140929 International Standard Book Number-13: 978-1-4665-8665-9 (eBook - PDF) This book contains information obtained from authentic and highly regarded sources. Reasonable efforts have been made to publish reliable data and information, but the author and publisher cannot assume responsibility for the validity of all materials or the consequences of their use. The authors and publishers have attempted to trace the copyright holders of all material reproduced in this publication and apologize to copyright holders if permission to publish in this form has not been obtained. If any copyright material has not been acknowledged please write and let us know so we may rectify in any future reprint. Except as permitted under U.S. Copyright Law, no part of this book may be reprinted, reproduced, transmit- ted, or utilized in any form by any electronic, mechanical, or other means, now known or hereafter invented, including photocopying, microfilming, and recording, or in any information storage or retrieval system, without written permission from the publishers. For permission to photocopy or use material electronically from this work, please access www.copyright. com (http://www.copyright.com/) or contact the Copyright Clearance Center, Inc. (CCC), 222 Rosewood Drive, Danvers, MA 01923, 978-750-8400. CCC is a not-for-profit organization that provides licenses and registration for a variety of users. For organizations that have been granted a photocopy license by the CCC, a separate system of payment has been arranged. Trademark Notice: Product or corporate names may be trademarks or registered trademarks, and are used only for identification and explanation without intent to infringe. Visit the Taylor & Francis Web site at http://www.taylorandfrancis.com and the CRC Press Web site at http://www.crcpress.com To Anna —S. P. To Wolfgang, Dietmar, and Thomas —G. K. Contents Preface.......................................................................................................................ix Editors .......................................................................................................................xi Contributors ...........................................................................................................xiii Chapter 1 Modern Aspects of Czochralski and Multicrystalline Silicon Crystal Growth .....................................................................................1 Koichi Kakimoto and Bing Gao Chapter 2 Growth and Characterization of Silicon–Germanium Alloys ...........23 Ichiro Yonenaga Chapter 3 Germanium on Silicon: Epitaxy and Applications ............................61 Daniel Chrastina Chapter 4 Self-Interstitials in Silicon and Germanium ......................................87 Alexandra Carvalho and Robert Jones Chapter 5 Vacancies in Si and Ge .....................................................................119 Eiji Kamiyama, Koji Sueoka, and Jan Vanhellemont Chapter 6 Self- and Dopant Diffusion in Silicon, Germanium, and Their Alloys ...............................................................................................159 Hartmut Bracht Chapter 7 Hydrogen in Si and Ge .....................................................................217 Stefan K. Estreicher, Michael Stavola, and Jörg Weber Chapter 8 Point Defect Complexes in Silicon ...................................................255 Edouard V. Monakhov and Bengt G. Svensson Chapter 9 Defect Delineation in Silicon Materials by Chemical Etching Techniques ........................................................................................289 Bernd O. Kolbesen vii viii Contents Chapter 10 Investigation of Defects and Impurities in Silicon by Infrared and Photoluminescence Spectroscopies ...........................................323 Simona Binetti and Adele Sassella Chapter 11 Device Operation as Crystal Quality Probe .....................................353 Erich Kasper and Wogong Zhang Chapter 12 Silicon and Germanium Nanocrystals .............................................377 Corrado Spinella and Salvo Mirabella

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These are the basic reasons for editing this book on these materials, at least par- tially based in the development of silicon wafer bonding for silicon on .. ye y. yN. T. = +. +. −. 0. 1. 1. , , ,. , , , τ τ τ τ … G. g g gu gv x y x y. T. = 0. 0. , , , Strained Si HFETs for microwave app
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