Table Of Content

Sensors and Actuators A, 28 (1991) 237 Author Index of Volume A28 Afanas’ev, V. V., 197 Grigoriev, S. A., 179 Mochalkina, O. R., 173 Singh, V. R., 7 Agrawal, R., 21 Guckel, H., 133 Mogilevski, A. N., 35 Smits, J. G., 41 Artyomayv, V. M., 223 Gumenjuk, S. V., 23] Mosser, V., 113 Spassov, L., 35 Audet, S. A., 13 Gurova, I. N., 179 Mukhametshin, R. G., 173 Srivastava, S. K., 21 Stavrovski, D. B., 35 Berezkin, V. A., 191 Harris, P. R., 147 Naito, Y., 63 Stroganova, N. S., 35 Bobrov, P. V., 197 Novikov, V. N., 179 Stuchebnikov, V. M., 207 Bocharov, Yu. V., 179 Inkin, V. N., 191 Sushentzov, N. I., 203 Borisenko, A. Yu., 173 Obermeier, E., 113 Suski, J., 113 Buser, R. A., 71 Kanda, Y., 83 Odintzov, M. A., 203 Suzhi Wu, 1 Kapustina, O. A., 179 Chau, K. H.-L., 147 Kartashev, A. S., 197 Panagou, J. G., 147 Tarantov, Yu. A., 197 Cooney, T. K., 41 Kodama, S., 63 Podiepetsky, B. I., 231 Vaganov, V. I1., 159, 161, Kodato, S., 63 Polyanskykh, N. A., 231 215 Dalke, S. L., 41 Kremliov, V. V., 231 Prasad, A., 7 Vikulin, I. M., 185 Demianovich, M. V., 179 Kruchinin, A. A., 197 Prjakhin, G. D., 215 Vlasov, Yu. G., 197 de Rooij, N. F., 71 Kudryashov, E. A., 223 Dwivedi, R., 21 Kudryavizev, T. L., 203 Qinggui Chen, 153 Weiyuan Wang, 153 Kuroda, K., 63 Qiu Anping, 29 Frank, R., 93 Xinyu Zheng, 1 Fung, C. D., 147 Lianzhong Yu., 105 Remizova, E. I., 179 Limanov, A. B., 215 Reshetov, V. N., 179 Yadava, P. K., 21 Galkina, I. P., 35 Rychkov, G. S., 191 Yan Wang, 105 Givargizov, E. I., 215 Mayorov, A. D., 35 Yegorov, V. V., 185 Glauberman, M. A., 185 Middelhoek, S., 13 Schooneveld, E. M., 13 Yuan Libo, 29 Goss, J., 113 Mihailov, D., 35 Shelenshkevich, V. A., 223 Grabchak, V. P., 191 Minhang Bao, 81, 105 Shulga, A. I., 223 Zaharieva, R., 35 Elsevier Sequoia, Lausanne Sensors and Actuators A, 28 (1991) 238-239 Subject Index of Volume A28 Acoustic power measurement Magnetic sensor effect of ultrasonic stress on sensitivity of Si strain analysis of n-channel MOSFET, with non-uniform devices and application to, 7 impurity profile, 21 Aluminium nitride films Magnetosensitive structure for SAW sensors, 203 injection-inversion, 185 Anisotropic etching Mercury vapour ASEP: CAD program for Si, 71 measurement of concentration of, in air through Arsenic piezoresonance method, 35 hydrogen concentration GaAs detectors, 191 Microelectronics ASEP pressure sensors merge micromachining and, 93 CAD program for Si anisotropic etching, 71 Micromachining Automatic intensity compensation pressure sensors merge, and microelectronics, 93 fiber-optic diaphragm pressure sensor with, 29 Modulation depth Si capacitive pressure transducer with increased, 223 CAD program MOS for Si anisotropic etching; ASEP, 71 magnetic field sensor, general characteristics and Construction problems current output mode of, 1 in sensors, 161 MOSFET Current output mode magnetic sensor with non-uniform impurity profile, of MOS magnetic field sensor, general characteristics analysis of n-channel, 21 and, 1 Fiber-optic diaphragm Optical power sensor pressure sensor with automatic intensity compensa- high-accuracy quick-response, with uc-Ge:H thin tion, 29 film, 63 Force transducers Optical sensitivity SOS strain gauge sensors for, 207 of pH-ISFET with Ta,O, membrane, 197 Frequency output integrated magnetic field sensor with, 231 pH-ISFET Gallium optical and thermal sensitivity of, with Ta,O; mem- hydrogen concentration GaAs detectors, 191 brane, 197 Germanium Phototransistor array high-accuracy, quick-response optical power sensor hardware and software complex for automatic laser with puc-Ge:H thin film, 63 beam focusing and adjustment based on, 173 Physical signals Hydrogen concentration liquid crystal sensors of, 179 GaAs detectors, 191 Piezoelectric bimorphs constituent equations of, 41 Impurity profile Piezoresistance effect analysis of n-channel MOSFET magnetic sensor with of Si, 83 non-uniform, 21 Piezoresistive pressure sensors Injection-inversion magnetosensitive structure, 185 based on polycrystalline Si, 113 ISFET Piezoresonance method optical and thermal sensitivity of pH-ISFET with measurement of concentration of Hg vapour in air Ta,O,; membrane, 197 through, 35 Pressure sensor(s) Laser beam focusing epitaxial Si on zirconia (SOZ), 153 hardware and software complex for automatic, and fiber-optic diaphragm, with automatic intensity com- adjustment based on circular-radial phototransis- pensation, 29 tor array, 173 merge micromachining and microelectronics, 93 Liquid crystal sensors over-range behaviour of sealed-cavity polysilicon, 147 of physical signals, 179 piezoresistive, based on polycrystalline Si, 113 silicon-on-insulator (SOI) structures for, 215 Magnetic field sensor stress concentration structure with front beam for, general characteristics and current output mode of 105 MOS, 1 Pressure transducer(s) integrated, with frequency output, 231 Si capacitive, with increased modulation depth, 223 Elsevier Sequoia, Lausanne SOS strain gauge sensors for force and, 207 SOS surface micromachined, 133 Strain gauge sensors for force and pressure trans- Sensor array ducers, 207 high-purity Si, for imaging soft X-ray radiation, 13 Strain devices SAW sensors effect of ultrasonic stress on sensitivity of Si, and AIN films for, 203 application to acoustic power measurement, 7 Silicon Strain gauge sensors ASEP: CAD program for Si anisotropic etching, 7] SOS, for force and pressure transducers, 207 capacitive pressure transducer with increased modu- Stress concentration structure lation depth, 223 with front beam for pressure sensor, 105 effect of ultrasonic stress on sensitivity of Si strain Tantalum devices and application to acoustic power mea- optical and thermal sensitivity of pH-ISFET with surement, 7 Ta,O, membrane, 197 epitaxial Si on zirconia (SOZ) pressure sensor, 153 Thermal sensitivity high-purity Si sensor array for imaging soft X-ray of pH-ISFET with Ta,O; membrane, 197 radiation, 13 over-range behaviour of sealed-cavity polysilicon Ultrasonic stress pressure sensors, 147 effect of, on sensitivity of Si strain devices and ap- piezoresistance effect of Si, 83 plication to acoustic power measurement, 7 piezoresistive pressure sensors based on polycrystalline Si, 113 X-ray radiation SOI structures for pressure sensors, 215 high-purity Si sensor array for imaging, 13 SOI silicon-on-insulator (SOI) structures for pressure sen- Zirconia epitaxial Si on zirconia (SOZ) pressure sensor, 153 sors, 215