Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications

547 Pages·2015·54.976 MB·English

by  J Arbiol, Q Xiong

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Woodhead Publishing Series in Electronic
and Optical Materials: Number 77
Semiconductor Nanowires
Materials, Synthesis,
Characterization and Applications
Edited by
Jordi Arbiol and Qihua Xiong
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List of contributors
J. Arbiol ICREA Research Professor,Instituci(cid:1)o Catalanade Recerca i Estudis
Avançats, ICREA,Barcelona,Catalonia, Spain; Institutde Ci(cid:3)encia deMaterials de
Barcelona, ICMAB-CSIC, Bellatera, Catalonia,Spain; CELLS-ALBA Synchrotron
Light Facility, Cerdanyola,Catalonia, Spain; InstitutCatal(cid:3)a de Nanoci(cid:3)encia i
Nanotecnologia (ICN2),Campus UAB, Bellaterra, Catalonia,Spain
M. Bescond CNRS-IM2NP,France
R. Calarco Paul-Drude-Institut f€ur Festk€orperelektronik, Berlin,Germany
W. Chen LPICM, CNRS/Ecole Polytechnique, Paris, France
C. Ch(cid:3)eze Paul-Drude-Institut f€ur Festk€orperelektronik,Berlin, Germany
X. Dai Nanyang Technological University, Singapore
S.A. Dayeh University ofCalifornia San Diego, CA, USA
Martien Ilse den Hertog Institut Neél CNRS/UJFUPR 2940, Grenoble, France
K.A.Dick Lund University, Lund, Sweden
P.Dogan Paul-Drude-Institut f€ur Festk€orperelektronik,Berlin, Germany
N. Erhard Technische Universit€at M€unchen, M€unchen, Germany; Nanosystems
InitiativeMunich (NIM), M€unchen,Germany
B.Grandidier Institutd’Electronique,deMicroélectroniqueetdeNanotechnologie
(IEMN),CNRS-UMR 8520, LilleCedex, France
A.Holleitner TechnischeUniversit€atM€unchen,M€unchen,Germany;Nanosystems
InitiativeMunich (NIM), M€unchen,Germany
LuyingLi Huazhong University of Science and Technology, Wuhan, China
B. Liu Schoolof Chemicaland Biomedical Engineering,Nanyang Technological
University, Singapore
L.Q. Mai Wuhan University ofTechnology,Wuhan,Hubei,China
J.Miao SchoolofChemicalandBiomedicalEngineering,NanyangTechnological
University, Singapore
G. Murray University of Chicago, Chicago, IL,USA
A. Olivier Nanyang Technological University, Singapore
xii Listofcontributors
A. Pan HunanUniversity, Changsha, Hunan, China
P. Pareige GPM, CNRS/Université et INSA deRouen, Rouen, France
M. Paul University of Chicago, Chicago, IL, USA
Lele Peng The University of Texas atAustin, Austin, TX, USA
M.R. Phillips University of Technology, Sydney, NSW, Australia
Ye Shi The University ofTexasatAustin, Austin, TX, USA
C. Soci Nanyang Technological University, Singapore
P.Thony UniversitéGrenobleAlpes,Grenoble,France;CEA,LITEN,LeBourget
du Lac,France
B. Tian University ofChicago,Chicago,IL, USA
C. Ton-That University ofTechnology, Sydney,NSW, Australia
L. Tong State Key Laboratoryof ModernOptical Instrumentation, Zhejiang
University, Hangzhou, Zhejiang, China
M.I.B.Utama School of Physicaland Mathematical Sciences, Nanyang
Technological University, Singapore
Qu-Quan Wang Wuhan University, Wuhan, China
C. Wilhelm Nanyang Technological University, Singapore
C. Xin State Key Laboratoryof ModernOptical Instrumentation, Zhejiang
University, Hangzhou, Zhejiang, China
Q.H. Xiong NanyangAssociate Professor,Fellowof SingaporeNational Research
Foundation, School ofPhysical andMathematical Sciences,College ofScience,
Nanyang Technological University, Singapore
T. Xu Institutd’Electronique,deMicroélectroniqueetdeNanotechnologie(IEMN),
CNRS-UMR 8520, LilleCedex, France; ShanghaiUniversity, Shanghai,People’s
Republic of China
H. Yu Schoolof Physicaland Mathematical Sciences, Nanyang Technological
University, Singapore
Guihua Yu The University of Texas atAustin, Austin, TX, USA
Anqi Zhang FudanUniversity, Shanghai,China
Q. Zhang Schoolof Physicaland Mathematical Sciences, Nanyang Technological
University, Singapore
Gengfeng Zheng Fudan University, Shanghai, China
Li Zhou Wuhan University, Wuhan, China; Schoolof Physicaland Mathematical
Sciences, NanyangTechnological University, Singapore
X. Zhu Hunan University, Changsha, Hunan,China
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