Table Of Content

Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconducttors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books is an imprint of the Butterworth Group which has principal offices in London, Sydney, Toronto, Wellington, Durban and Boston First published 1949 Eleventh edition 1981 © Butterworth & Co. (Publishers) Ltd, 1981 All rights reserved. No part of thrspublication may be reproduced or transmitted in any form or by any means, including photocopying and recording, without the written permission of the copyright holder, application for which should be addressed to the Publishers. Such written permission must also be obtained before any part of this publication is stored in a retrieval system of any nature. This book is sold subject to the Standard Conditions of Sale of Net Books and may not be re-sold in the UK below the net price given by the Publishers in their current price list. British Library Cataloguing in Publication Data Semiconductor data book. - 11th ed. 1. Semiconductors - Tables 2. Radio - Apparatus and supplies I. Ball, Anthony Michael 621.3841'34 TK6565.S/ ISBN 0-408-00479-7 Typeset by Butterworths Litho Preparation Department Printed in England by Spottiswoode Ballantyne Ltd., Colchester, Essex INTRODUCTION In compiling the 11th edition of this reference both cumbersome and unnecessary. In consequ­ manual, considerable revision has taken place with ence this edition now contains device details in an emphasis on presentation of data in an easier-to- alpha-numeric sequence with an indication of the find style. Previous editions have entailed consider­ manufacturer given in code form in the last column. able cross referencing with subsequent frustration. A code key follows this introduction. With so few valves now being available the entire Finally I must extend my sincere gratitude to all thermionic section has been omitted allowing con­ manufacturers whose kind assistance has made this centration on the considerable range of semicon­ revision possible and from whose data the tables ductor devices. have been compiled. Previous methods of including devices in manufacturers' named sections have proved to be EXPLANATION OF THE TABLES GENERAL All ratings and characteristics referred to in these represent the extreme capabilities of the device and tables are at 25°C ambient temperature unless other­ are not recommended as design characteristics. wise stated. Lead identification details are given after the data The values quoted for Absolute Maximum Ratings sections. should never be exceeded in normal use. They COLUMN HEADINGS CQB Output capacitance Tj Junction temperature f Unity, common-emitter, current gain fre­ V Drain to source voltage T ds quency V Gate to drain voltage gd hFE Large signal current gain, common emitter Vgs Gate to sou rce voltage lc Continuous collector current VCBO Collector to base voltage, emitter open circuit lg Continuous gate current VCEO Collector to emitter voltage, base open circuit P Power dissipation d V Emitter to base voltage, collector open circuit EBO P t Maximum power dissipation to CONSTRUCTION N N-channel P P-channel Ge Germanium Si Silicon INTRODUCTION In compiling the 11th edition of this reference both cumbersome and unnecessary. In consequ­ manual, considerable revision has taken place with ence this edition now contains device details in an emphasis on presentation of data in an easier-to- alpha-numeric sequence with an indication of the find style. Previous editions have entailed consider­ manufacturer given in code form in the last column. able cross referencing with subsequent frustration. A code key follows this introduction. With so few valves now being available the entire Finally I must extend my sincere gratitude to all thermionic section has been omitted allowing con­ manufacturers whose kind assistance has made this centration on the considerable range of semicon­ revision possible and from whose data the tables ductor devices. have been compiled. Previous methods of including devices in manufacturers' named sections have proved to be EXPLANATION OF THE TABLES GENERAL All ratings and characteristics referred to in these represent the extreme capabilities of the device and tables are at 25°C ambient temperature unless other­ are not recommended as design characteristics. wise stated. Lead identification details are given after the data The values quoted for Absolute Maximum Ratings sections. should never be exceeded in normal use. They COLUMN HEADINGS CQB Output capacitance Tj Junction temperature f Unity, common-emitter, current gain fre­ V Drain to source voltage T ds quency V Gate to drain voltage gd hFE Large signal current gain, common emitter Vgs Gate to sou rce voltage lc Continuous collector current VCBO Collector to base voltage, emitter open circuit lg Continuous gate current VCEO Collector to emitter voltage, base open circuit P Power dissipation d V Emitter to base voltage, collector open circuit EBO P t Maximum power dissipation to CONSTRUCTION N N-channel P P-channel Ge Germanium Si Silicon Manufacturer's Codes and Addresses CODE MANUFACTURER AEC AEC Telefunken (UK) Ltd, Bath Road, Slough, Berks SL1 4AW F Fairchild Semiconductors Ltd, Station Road, Barnet, Herts Fe Ferranti Ltd, Hollinwood, Lanes OL9 755 G General Instruments (UK) Ltd, Cock Lane, High Wycombe, Bucks IR International Rectifier Co. (UK) Ltd, Hurst Green, Oxted, Surrey RH8 9BB ITT ITT Semiconductors, Maidstone Road, Footscray, Sidcup, Kent DA14 5HT J Japanese L Lambda Electronics Ltd., Abbey Born Road, High Wycombe, Bucks M Mullard Ltd, Mullard House, Torrington Place, London WC1E7HD Mo Motorola Ltd, York House, Empire Way, Wembley, Middlesex HA9 OPR N National Semiconductors (UK) Ltd, 19 Goldington Road, Bedford MK40 3LF P Plessey Optoelectronics Ltd, Wood Burcote Way, Towcester, Northants NN12 7JN R Remo Rectifier Int. Ltd, 17 Adams House, The High, Harlow, Essex RCA RCA Ltd, Lincoln Way, Sunbury-on-Thames, Middlesex TW16 7HW S Siliconix Ltd, 30A High Street, Thatcham, Newbury, Berks RG13 4JG Se Semikron (UK) Ltd, 4 Marshgate Drive, Hertford Sem Semitron Ltd, Cricklade, Swindon, Wilts SGS SGS-ATES (UK) Ltd, Planar House, Walton Street, Aylesbury, Bucks Sp Sprague Electric (UK) Ltd, 159 High Street, Yiewsley, West Drayton, Middlesex UB7 7RY STC Silicon Transistor (BBF) Ltd, Seronera House, Linden Chase, Sevenoaks, Kent TN13 3JU T Teledyne Semiconductors, Heathrow House, Bath Road, Cranford, Middlesex TW5 9QP Tl Texas Instruments, Manton Lane, Bedford MK41 7PA V Varo Semiconductors Int. Inc., Deepdene House, Bellgrave Road, Welling, Kent Vi Vitality Ltd, Beetans Way, Bury-St-Edmunds, Suffolk u Micro Electronics Ltd, York House, Empire Way, Wembley, Middlesex HA9 OPR Transistors, General h P f Absolute Max. Ratings C FE Type Polarity Material Mtaoxt. TyTp . VCB0 VCE0 VEB0 xc Min. at mA Max. MaDx. Ma0xB. OuCtalsien e ILnefaod. Manufacturer (mli)) (MHz) (V) (V) (V) (mA) (C) (pF) AC127 NPN Ge 3^0 2.5 32 12 10 500 50 @ 500 (typ) 90 UO TO-1 01 M AC 128 PNP Ge 700 1 -32 -16 -10 1A 80 S 1A (typ] 100 200 TO-1 01 M AC 187 NPN Ge 800 1 25 15 10 2A 100 300 500 90 180 TO-1 01 M AC 188 PNP Ge 800 1 -25 -15 -10 2A 200 @ 300 (typ) 90 110 TO-1 01 M ADU9 PNP Ge 22.5W 0.5 -50 -30 -20 3.5A 80 @ 1A (typ] 100 200 TO-3 02 M AD161 NPN Ge i+UJ 1 32 20 10 3A 100 200 500 90 150 TD-3 02 M AD162 PNP Ge 6U 1 -32 -20 -10 3A 80 500 320 90 115 SO-55 02 M AF106 PNP Ge 60 220 -25 -18 -0.3 10 25 1 - 90 - TO-72 03 AEG AF109R PNP Ge 60 200 -20 -15 -0.3 10 20 1.5 - 90 - TO-72 03 AEG AF139 PNP Ge 60 550 -20 -15 -0.3 10 10 1.5 - 90 - TO-72 03 AEG _ _ AF239 PNP Ge 60 650 -15 -15. -0.3 10 10 2 90 TO-72 03 AEG AF239S PNP Ge 60 650 -15 -15 -0.3 10 10 2 - 90 - TO-72 03 AEG AF279 PNP Ge 60 780 -15 -15 -0.3 10 10 2 - 90 - TO-50 Ok AEG AF280 PNP Ge 60 550 -15 -15 -0.3 10 10 2 - 90 - TO-50 Ok AEG B130A NPN Si 120U - (*00 <*00 5 15A 700 2.5A - 175 - TO-3 02 SGS _ _ - B130B NPN Si 120LJ <*00 <*00 5 15A 700 2.5A 175 TO-3 02 SGS B130C NPN Si 120U _ 350 350 5 15A 700 2.5A - 175 - TO-3 02 SGS B133A NPN Si 100U1 - t*00 1»00 5 10A 500 2.5A - 175 - TO-3 02 SGS B133B NPN Si 100W _ <*00 UDQ 5 10A 500 2.5A - 175 - TO-3 02 SGS B133C NPN Si 100U - 350 350 5 10A 500 2.5A - 175 - TO-3 02 SGS BC107 NPN Si 300 250 50 1*5 6 100 120 2 220 175 6 TO-18 05 AEG,Fe,M,Mo,N, SGS.TI.u BC107A NPN Si 300 250 50 1*5 6 100 120 2 220 175 6 T0r18 05 AEG.ITT.M.N, Sp.u BC107B NPN Si 300 250 50 1*5 6 100 180 2 ueo 175 6 TO-18 05 AEG.ITT.M.N, S.p.u BC107P NPN Si 300 250 50 1*5 6 100 120 2 220 175 6 TO-92 06 Fe BC108 NPN Si 300 250 30 20 5 100 120 2 220 175 6 TO-18 05 AEG.Fe.M.Mo, N.SGS.TI BC108A NPN Si 300 250 30 20 5 100 120 2 220 175 6 TO-18 05 AEG.ITT.N.Sp.u BC108B NPN Si 300 250 30 20 5 100 180 2 <*60 175 6 TO-18 05 AEG,ITT,N,Sp,u BC108C NPN Si 300 250 30 20 5 100 380 2 800 175 6 TO-18 05 AEG.ITT.N.Sp.u BC108P NPN Si 300 250 30 20 5 100 120 2 220 175 6 TO-92 06 Fe BC109 NPN Si 300 300 30 20 5 50 200 2 U50T 175 6 TO-18 05 AEG.Fe.M.Mo.N, SGS.TI.u BC109B NPN Si 300 300 30 20 5 50 180 2 1*60 175 6 TO-18 05 AEG.ITT.M.N, Sp.u BC109C NPN Si 300 300 30 20 5 50 380 2 800 175 6 TO-18 05 AEG.ITT.M.N, Sp.u BC109P NPN Si 300 300 30 20 5 50 120 2 220 175 6 TO-92 06 Fe BC110 NPN Si 300 100 80 80 8 50 30 2 . 175 5 TO-18 05 Sp BC113 NPN Si 200 60 30 25 6 50 200 1 1000 125 k TO-106 07 SGS.u BC114 NPN Si 200 60 30 25 6 50 200 1 1000 125 k TO-106 07 SGS,u BC115 NPN Si 200 kQ kO 30 5 200 100 10 <*00 125 25 TO-105 08 SGS BC116 PNP Si 300 200 -60 -U0 -5 600 1*0 150 120 125 8 TO-105 08 u BC11SA PNP Si 300 200 -60 -U0 -5 600 80 150 21*0 125 8 TO-105 08 SGS,u BC117 NPN Si 300 60 120 120 5 50 30 10 - 125 6 TO-105 08 u BC118 NPN Si 200 200 k5 1*5 k 100 kO 10 160 125 3.5 TO-106 07 SGS BC119 NPN Si 800 kO 60 30 5 1A 1*0 150 120 200 25 TO-39 08 F,SGS BC120 NPN Si 800 kQ 60 30 5 1A 20 150 - 200 25 T0-39 05 SGS _ BC125 NPN Si 300 kO 50 30 5 500 30 150 125 25 TO-105 08 SGS BC126 PNP Si 300 80 -35 -30 -5 600 30 150 120 125 a TO-105 08 SGS.u BC132 NPN Si 200 60 30 25 6 200 60 1 300 125 k TO-106 07 SGS BC13<» NPN Si 200 200 U5 k5 k 200 150 10 t*00 125 3.5 TO-106 07 SGS BC135 NPN Si 200 200 1*5 1*5 5 200 50 10 - 125 3.5 TO-106 07 SGS BC136 NPN Si 300 60 60 kO 5 500 30 10 - 125 25 TO-106 07 u BC137 PNP si 300 60 -kQ -kO -5 600 25 50 - 125 5 TO-105 08 u BC138 NPN Si 800 kO 60 1*0 5 1A 35 500 - 200 25 TO-5 08 u BC139 PNP Si 700 kO -kO -kO -5 500 kO 100 - 200 10 TO-39 08 F,u BCUO NPN Si 650 50 80 kO 7 1A 1*0 100 95 175 25 TO-39 08 AEG,F,Fe,Mo, N,SGS,u BCHtO-6 NPN Si 650 50 80 1*0 7 1A 1*0 100 95 175 25 TO-39 08 AEG.F.N.Sp.u BCUO-10 NPN Si 650 50 80 1*0 7 1A 67 100 150 175 25 TO-39 08 AEGfF,N,Sp,u BCUO-16 NPN Si 650 50 80 kO 7 1A 106 100 236 175 25 TO-39 08 AEG,F,N,Sp,u BCK+0-25 NPN Si 650 50 80 t*0 7 1A 160 100 i»00 175 25 TO-39 08 F BC1M NPN Si 650 50 100 60 7 1A 1*0 100 95 175 25 TO-39 D8 AEG.F.Fe.Mo, N.SGS.u BC1U1-6 NPN Si 650 50 100 60 7 1A kO 100 95 175 25 TO-39 08 AEG,F,N,Sp,u BC1M-10 NPN Si 650 50 100 60 7 1A 67 100 150 175 25 TO-39 08 F,N,Sp,u BC1M-16 NPN Si 650 50 100 60 7 1A 106 100 236 175 25 TO-39 08 F.Sp.u BC1^2 NPN Si 800 <*0 80 60 5 1A 20 200 - 200 20 TO-39 08 F.TI.u BC1W PNP Si 800 kQ -60 -60 -5 1A 20 200 - 200 20 TO-39 08 F,N,TI,u _ - BC1**5 NPN Si 300 120 120 5 100 30 5 125 6 TO-105 08 N BCK+6-1 NPN Si 50 60 20 20 k 50 80 0.2 200 125 20 TO-92 09 N BC1<*6-2 NPN Si 50 60 20 20 k 50 1l»0 0.2 350 125 20 TO-92 09 N Transistors, General P f Absolute Max . Ratings hFE Type Polarity Material Mtaoxt. TyTp . VCB0 VCE0 VEB0 Mln. at mA Max. Max. Max. OuCtalsien e ILnefaod. Manufacturer (mill) (MHz) (V) (V) (V) (mA) (°C) (pF) BC146-3 NPN Si 50 60 20 20 k 50 280 0.2 550 125 20 TO-92 09 N BC147 NPN Si 250 150 50 U5 6 200 110 2 125 5 SOT-25 10 M 8C147A NPN Si 250 150 50 U5 6 200 110 2 125 5 SOT-25 10 M BC147B NPIM Si 250 150 50 k5 6 200 200 2 - 125 5 SOT-25 10 M BC147C NPIM Si 250 150 50 1*5 6 200 420 2 125 5 SOT-25 10 M BCI^B NPN Si 250 150 30 20 5 200 110 2 125 5 SOT-25 10 M BC148A NPN Si 250 150 30 20 5 200 110 2 125 5 SOT-25 10 M BC148C NPN Si 250 150 30 20 5 200 1*20 2 125 5 SOT-25 10 M BC149 NPN Si 250 150 30 20 5 200 200 2 125 5 SOT-25 10 M BC149B NPN Si 250 150 30 20 5 200 200 2 125 5 SOT-25 10 M BC149C NPN Si 250 150 30 20 5 200 420 2 - 125 5 SOT-25 10 M BC153 PNP Si 200 kQ -kO -kO -5 100 50 10 125 6 TQ-106 07 SGS,u BC154 PNP Si 200 kO -kO -kO -5 100 160 10 125 6 TO-106 07 SGS,u BC157 PNP Si 300 150 -50 -50 -5 100 70 2 - 125 6 SOT-25 10 M BC158 PNP Si 300 150 -30 -30 -5 100 70 2 125 6 SOT-25 10 M BC158A PNP Si 300 100 -30 -25 -5 100 120 2 125 6 SOT-25 10 M BC158B PNP Si 300 100 -30 -25 -5 100 180 2 125 6 SOT-25 10 M BC159 PNP Si 300 100 -25 -20 -5 100 120 2 125 6 SOT-25 10 M BC159A PNP Si 300 100 -25 -20 -5 100 120 2 125 6 SOT-25 10 M BCteO PNP Si 650 50 -ko -kO -5 1A 40 100 95 175 30 TO-39 08 AEG,F,Fe,Mo N,u BC160-6 PNP Si 650 50 -kO -kQ -5 1A 40 100 95 175 30 TO-39 08 F,N,Sp,u BC160-10 PNP Si 650 50 -kQ -1*0 -5 1A 67 100 150 175 30 TO-39 08 F,N,Sp,u BC160-16 PNP Si 650 50 -kO -t*Q -5 1A 106 100 236 175 30 TO-39 08 F,N,Sp,u BC161 PNP Si 650 50 -60 -60 -5 1A <*0 100 95 175 30 TO-39 08 AEG,Fe,Mo,N,u BC161-6 PNP Si 650 50 -60 -60 -5 1A 1*0 100 95 175 30 TO-39 08 F,N,Sp,u BC 161-10 PNP Si 650 50 -60 -60 -5 1A 67 100 95 175 30 TO-39 08 F,N,Sp,u BC161-16 PNP Si 650 50 -60 -60 -5 1A 106 100 95 175 30 TO-39 08 F,N,Spfu BC161-25 PNP Si 650 50 -60 -60 -5 1A 160 100 400 175 30 TO-39 08 F BC167 NPN Si 375 85 k5 1*5 6 100 120 2 800 150 4.5 TO-92 09 F,N,SGS BC167A NPN Si 375 85 k5 k5 6 100 120 2 220 150 4.5 TO-92 09 F,N,SGS,Sp BC167B NPN Si 375 85 k5 1*5 6 100 180 2 460 150 k.5 TO-92 09 F,N,SGS,Sp BC16S NPN Si 375 85 30 20 5 100 120 2 800 150 k.5 TO-92 09 F,N,SGS BC168A NPN Si 375 85 30 20 5 100 120 2 220 150 k.5 TO-92 09 F,N,SGS,Sp BC168B NPN Si 375 85 30 20 5 100 180 2 460 150 k.5 TO-92 09 F,N,SGS,Sp BC16BC NPN Si 375 85 30 20 5 100 380 2 800 150 k.5 TO-92 09 F,N,SGS,Sp BC169 NPN Si 375 85 30 20 5 50 180 2 800 150 4.5 TO-92 09 F,N,SGS BC169C NPN Si 375 85 30 20 5 50 180 2 400 150 k.5 T0*-92 09 FfN,SGS,Sp BC169C NPN Si 375 85 30 20 5 50 380 2 800 150 k.5 TO-92 09 F,N,SGS,Sp BC170 NPN Si 300 100 20 20 5 100 35 1 100 150 4 TO-92 GE BC170A NPN Si 300 100 20 20 5 100 35 1 100 150 4 TO-92 ITT,SGS BC170B NPN Si 300 100 20 20 5 100 80 1 250 150 k TO-92 ITT.SGS BC170C NPN Si 300 100 20 20 5 100 200 1 600 150 4 TO-92 ITT.SGS BC171 NPN Si 300 150 50 1*5 6 100 125 2 500 150 6 TO-92 GE,SGS BC171A NPN Si 300 150 50 k5 6 100 125 2 260 150 6 TO-92 ITT,SGS BC171P NPN Si 300 150 50 U5 6 100 240 2 500 150 6 TO-92 ITT.SGS BC172 NPN Si 300 150 25 25 5 100 110 2 800 150 6 TO-92 SGS BC172 NPN Si 300 150 25 25 5 100 110 2 220 150 6 TO-92 ITT.SGS BC172B NPN Si 300 150 25 25 5 100 200 2 1*50 150 6 TO-92 ITT.SGS BC172C NPN Si 300 150 25 25 5 100 1*20 2 800 150 6 TO-92 ITT.SGS BC173B NPN Si 300 150 25 25 5 100 200 2 450 150 6 TO-92 ITTfSGS BC173C NPN Si 300 150 25 25 5 100 420 2 900 150 6 TO-92 ITT,SGS BC174A NPN Si 300 100 6k Sk 5 100 125 2 150 6 TO-39 08 ITT BC174B NPN Si 300 100 ek ■6k 5 100 240 2 150 6 TO-39 08 ITT BC177 PNP Si 300 130 -50 -U5 -5 100 110 2 220 175 4.5 TO-18 05 AEG.F.Mo.N.SGS TI,u BC177A PNP Si 300 130 -50 -1*5 -5 100 110 2 230 175 l*.5 TO-18 05 AEG,N,Sp,u RC177B PNP Si 300 130 -50 -k5 -5 100 200 2 £♦50 175 U.5 TO-18 05 AEG.F.N.Sp.u BC177C PNP Si 300 130 -50 -t*5 -5 100 420 2 800 175 i*.5 TO-18, 05 AEG.u BC177P PNP Si 300 130 -50 -1*5 -5 100 110 2 220 175 k.5 TO-92 06 Fe BC177\/I PNP Si 300 130 -50 -t*5 -5 100 70 2 130 175 k.5 TO-18 05 AEG.N BC178 PNP Si 300 130 -30 -25 -5 100 110 2 220 175 k.5 TO-18 05 AEG,F,Mo,NfSGS TI.u BC178A PNP Si 300 130 -30-25 -5 100 110 2 220 175 U.5 TO-18 05 AEG.N.Sp.u BC178B PNP Si 300 130 -30 -25 -5 100 200 2 450 175 k.5 TO-18 05 AEG.F.N.Sp.u BC178C PNP Si 300 130 -30 -25 -5 100 420 2 800 175 k.5 TO-18 05 AEG.Sp.u, BC178P PNP Si 300 130 -30 -25 -5 100 110 2 220 175 k.5 TO-92 06 Fe BC179 PNP Si 300 130 -25 -20 -5 100 110 2 220 175 k.5 TO-18 05 AEG.F.Mo.N.SGS TI,u BC179A PNP Si 300 130 -25 -20 -5 100 110 2 220 175 k.5 TO-18 05 AEG,F,N,u BC179B PNP Si 300 130 -25 -20 -5 100 200 2 450 175 k.5 TO-18 05 AEG.F.N.Sp.u Transistors, General P Absolute Max . Ratings hFE C Type Polarity Material tot U V U 0B Case Lead Manufacturer Max. Typ. CB0 CE0 EB0 xc Mln. at mA Max. Max. Max. Outline Info. (mtd) (MHz) (V) (V) (V) (mA) <°C) (pF) BC179C PIMP Si 300 130 -25 -20 -5 100 **20 2 800 175 k.5 TO-18 05 AEG,Spfu BC179P PNP Si 300 130 -25 -20 -5 100 110 2 220 175 *».5 TO-92 06 Fe BC1B2 NPN Si 300 280 60 50 6 200 100 2 i»ao 150 k.5 TO-92 12 AEGfF,Mo,N BC182A NPN Si 300 280 60 50 6 200 100 2 <*80 150 k.5 TO-92 11 AEG,F,GE,Mo,N, Sp BC1B2B NPN Si 300 280 60 50 6 200 100 2 **80 150 k.5 TO-92 11 AEG,F,Mo,N,Sp BC182K NPN Si 375 280 60 50 6 200 110 2 i»50 150 k.5 TO-92 11 u BC1B2KA NPN Si 375 280 60 50 6 200 110 2 220 150 k.5 TO-92 11 u BC182KB NPN Si 375 280 60 50 6 200 200 2 U50 150 k.5 TO-92 11 u BC182L NPN SI 375 280 60 50 6 200 110 2 **50 150 k.5 TO-92 09 F,N,TItu BC182LA NPN Si 375 280 60 50 6 200 110 2 220 150 k.5 TO-92 0? N,u BC182LB NPN Si 375 280 60 50 6 200 200 2 ^50 150 k.5 TO-92 09 |\J,u BC182P NPN Si 300 280 60 50 6 200 100 2 t+BO 150 k.5 TO-92 06 Fe BC183 NPN Si 300 150 k5 30 5 200 100 2 850 150 k.5 TO-92 09 F,N BC183A NPN Si 300 150 k5 30 5 200 125 2 260 150 k.5 TO-92 11 F,N BC183B NPN Si 300 150 k5 30 5 200 2t»0 2 500 150 k.5 TO-92 11 F,N BC183C NPN Si 300 150 k5 30 5 200 t»50 2 900 150 k.5 TO-92 11 F,N BC183KA NPN Si 375 150 k5 30 5 200 110 2 800 150 k.5 TO-92 11 u BC183KB NPN Si 375 150 k5 30 5 200 110 2 220 150 k.5 TO-92 11 u BC183KC NPN Si 375 150 k5 30 5 200 200 2 1*50 150 k.5 TO-92 11 u BC183L NPN Si 375 150 k5 30 5 200 100 2 850 150 k.5 TO-92 09 F,N,TI BC183LA NPN Si 375 150 1*5 30 5 200 110 2 800 150 k.5 TO-92 09 N,u BC183LB NPN Si 375 150 1*5 30 5 200 110 2 220 150 k.5 T9-92 09 N,u BC183LC NPN Si 375 150 1*5 30 5 200 200 2 t*50 150 k.5 TO-92 09 N,u BC183P NPN Si 300 150 1*5 30 5 200 100 2 850 150 k.5 TO-92 06 Fe BC18*» NPN Si 300 150 1*5 30 5 200 2**0 2 900 150 k.5 TO-92 05 F,N BC18^B NPN Si 300 150 1*5 30 5 200 2t*0 2 500 150 k.5 TO-92 11 F,N BC18^C NPN Si 300 150 k5 30 5 203 U50 2 900 15U k.5 TO-92 11 N BC18i»K NPN Si 375 150 1*5 30 5 200 200 2 800 150 k.5 TO-92 11 u BC18i»KB NPN Si 375 150 U5 30 5 200 200 2 <+50 150 k.5 TO-92 11 u BC18^KC NPN Si 375 150 U5 30 5 200 1*20 2 800 150 k.5 TO-92 11 u BC18M NPN Si 375 150 1*5 30 5 200 260 2 BOO 150 k.5 TO-92 09 F,N,TI,u BC18M.B NPN Si 375 150 1*5 30 5 200 200 2 1*50 150 k.5 TO-92 09 N,u BC1BM.C NPN Si 375 150 1*5 30 5 200 <*20 2 800 150 k.5 TO-92 09 N,u BC18t»P NPN Si 300 150 U5 30 5 200 250 2 - 150 k.5 TO-92 06 Fe BC20<* PNP Si 203 100 -50 -k5 -5 100 50 2 *»50 125 k TO-106 07 SGS.u BC2Qi»A PNP Si 200 100 -50 -t*5 -5 100 110 2 220 125 k TO-106 07 u BC20<*B PNP Si 200 100 -50 -*»5 -5 100 200 2 1*50 125 k TO-106 07 u BC2£ttYI PNP Si 200 100 -50 -1*5 -5 100 50 2 120 125 k TO-106 07 u BC205 PNP Si 200 100 -25 -20 -5 100 50 2 1*50 125 k TO-106 07 SGS,u BC205A PNP Si 200 100 -25 -20 -5 103 110 2 220 125 k TO-106 07 u BC205B PNP Si 200 100 -25 -20 -5 100 200 2 **50 125 k TO-106 07 u BC206 PNP Si 200 100 -25 -20 -5 100 110 2 £♦50 125 k TO-106 07 SGS,u BC206A PNP Si 20: 100 -25 -20 -5 100 110 2 220 125 k TO-106 07 u BC206B PNP Si 200 100 -25 -20 -5 100 200 2 <*50 125 k TO-106 07 u BC2D7 NPN Si 300 150 50 h5 5 100 110 2 *450 125 6 TO-106 07 SGS.u BC207A NPN Si 300 150 50 k5 5 100 110 2 220 125 6 TO-106 07 u BC207B NPN Si 300 150 50 1*5 5 100 200 2 <*50 125 6 TO-106 07 u BC2D7C NPN Si 300 150 50 1*5 5 100 <4 20 2 800 125 6 TO-106 07 u BC2Q8 NPN Si 300 150 25 20 5 100 110 2 BOO 125 6 TO-106 07 SGS,u BC208A NPN Si 300 150 25 20 5 100 110 2 220 125 6 TO-106 07 u BC2D8B NPN Si 300 150 25 20 5 100 200 2 ^50 125 6 TO-106 07 u BC208C NPN Si 300 150 25 20 5 100 U20 2 800 125 6 TO-106 07 u BC209 NPN Si 300 150 25 20 5 100 200 2 8(/o 125 6 TO-106 07 SGS,u BC2Q9B NPN Si 300 150 25 20 5 100 200 2 iy50 125 6 TO-106 07 u BC209C NPN Si 300 150 25 20 5 100 **20 2 800 125 6 TO-106 07 u BC211 NPN Si 800 30 80 kO 7 1A kO 300 250 175 6 TO-39 08 u BC211A NPN Si 800 50 80 60 5 1A kO 150 250 175 25 TO-39 OB u BC212 PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 11 AEG,F,GE,Mo,N BC212A PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 11 AEG,F,GE,Mo, N,Sp BC212B PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 11 AEG,F,Mo,N,Sp BC212K PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 11 u BC212KA PNP Si 300 350 -60 -50 -5 200 100 2 300 150 5 TO-92 11 u BC212KB PNP Si 300 350 -60 -50 -5 200 200 2 <400 150 5 TO-92 11 u BC212L PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 09 F,N,TI,u BC212LA PNP Si 300 350 -60 -50 -5 200 100 2 300 150 5 TO-92 09 N,u BC212LB PNP Si 300 350 -60 -50 -5 200 200 2 <*00 150 5 TO-92 09 N,u BC212P PNP Si 300 350 -60 -50 -5 200 60 2 <*00 150 5 TO-92 06 Fe BC213 PNP Si 300 350 -k5 -30 -5 200 80 2 600 150 10 TO-92 11 F,N Transistors, General Type Piolarity Material MPtaoxt. Typ. VCABb0s oluVtCeE 0M ax . VERaBt0i ngsh Mln. haFtE mA Max. MTaJx . MCa0xB. OuCtalsien e ILnefaod. Manufacturer (mU) (MHz) (V) (V) (V) (mA) C°C) (pF) BC213A PNP Si 300 350 -45 -30 -5 200 100 2 300 150 10 TO-92 11 F,N BC213B PNP Si 300 350 -45 -30 -5 200 200 2 400 150 10 TO-92 11 F.N BC213C PNP Si 300 350 -45 -30 -5 200 350 2 600 150 10 TO-92 11 N BC213K PNP Si 300 350 -1*5 -30 -5 200 80 2 400 150 10 TO-92 11 u BC213KA PNP Si 300 350 -1*5 -30 -5 200 100 2 300 150 10 TO-92 11 u BC213KB PNP Si 300 350 -k5 -30 -5 200 200 2 400 150 10 TO-92 11 u BC213KC PNP Si 300 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 11 u BC213L PNP Si 300 350 -i*5 -30 -5 200 80 2 400 150 10 TO-92 09 F,N,TI,u BC213LA PNP Si 300 350 -1*5 -30 -5 200 100 2 300 150 10 TO-92 09 N,u BC213LB PNP Si 300 350 -1*5 -30 -5 200 100 2 400 150 10 TO-92 09 N,u BC213LC PNP Si 300 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 09 N,u BC213P PNP Si 300 350 -t*5 -30 -5 200 80 2 600 150 10 TO-92 06 Fe BC214 PNP Si 300 350 -k5 -30 -5 200 140 2 600 150 10 TO-92 11 F,N BC214A PNP Si 300 350 -1*5 -30 -5 200 100 2 300 150 10 TO-92 12 N BC214B PNP Si 300 350 -1*5 -30 -5 200 200 2 400 150 10 TO-92 11 F,N BC214C PNP Si 300 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 11 F,N BC214K PNP Si 300 350 -1*5 -30 -5 200 140 2 400 150 10 TO-92 11 u BC214KA PNP Si 300 350 -1*5 -30 -5 200 100 2 300 150 10 TO-92 11 u BC214KB PNP Si 300 350 -1*5 -30 -5 200 200 2 400 150 10 TO-92 11 u BC214KC PNP Si 300 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 11 u BC214L PNP Si 300 350 -45 -30 -5 200 140 2 400 150 10 TO-92 09 F,N,TI,u BC214LA PNP Si 300 350 -k5 -30 -5 200 100 2 300 150 10 TO-92 09 u BC214LB PNP Si 300 350 -1*5 -30 -5 200 200 2 400 150 10 TO-92 09 N,u BC214LC PNP Si 308 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 09 N,u BC214P PNP Si 300 350 -U5 -30 -5 200 140 2 600 150 10 TO-92 06 Fe BC221 PNP Si 300 75 -30 -30 -5 500 50 10 115 150 15 TO-105 08 u BC237 NPN -Si 375 150 50 45 6 100 110 2 450 150 4.5 TO-92 11 AEG,F,GE,Mo,u BC237-92 NPN Si 300 150 50 45 6 100 125 2 500 150 4.5 TO-92 11 N BC237A NPN Si 300 150 50 i*5 6 100 110 2 220 150 4.5 TO-92 11 AEGfF,GE,ITT, Mo,Sp,u BC237A-92 NPN Si 300 15D 50 k5 6 100 125 2 500 150 4.5 TO-92 11 N BC237B NPN Si 375 150 50 1*5 6 100 200 2 450 150 4.5 TO-92 11 AEG,F,GE,ITT, Mo,Sp,u BC237B-92 NPN Si 300 150 50 1*5 6 100 240 2 500 150 4.5 TO-92 11 N BC237P NPN Si 300 150 50 45 5 100 120 2 220 150 4.5 TO-92 06 Fe BC238 NPN Si 300 150 30 30 5 100 110 2 800 150 4.5 TO-92 11 AEG,F,Fe,GE,Mo,u BC238-92 NPN Si 300 150 30 30 5 100 125 2 900 150 4.5 TO-92 11 N BC238A NPN Si 300 150 30 30 5 100 110 2 220 150 4.5 TO-92 11 AEG,F,GE,Mo,ITT Sp,u BC238A-92 NPN Si 300 150 30 30 5 100 125 2 260 150 4.5 TO-92 11 N BC238B NPN Si 300 150 30 30 5 100 200 2 450 150 4.5 TO-92 11 AEG,F,GE,Mo, ITT,Sp,u BC238B-92 NPN Si 300 150 30 30 5 100 240 2 500 150 4.5 TO-92 11 N BC238C NPN Si 300 150 30 30 5 100 420 2 800 150 4.5 TO-92 11 AEG,F,GE,Mo, ITT,Sp,u BC238C-92 NPN Si 300 150 30 30 5 100 l*5Q 2 900 150 4.5 TO-92 11 N BC238P NPN Si 300 150 30 30 5 100 120 2 220 150 4.5 TO-92 06 Fe BC239 UPN Si 300 150 30 30 5 100 200 2 800 150 4.5 TO-92 11 AEG,FfFe,Mo, GE,u BC239-92 NPN Si 300 150 30 30 5 100 2k0 2 900 150 4.5 TO-92 11 N BC239B NPN Si 300 150 30 30 5 100 200 2 450 150 4.5 TO-92 11 AEG,F,GE,Mo, ITT,Sp,u BC239B-92 NPN Si 300 150 30 30 5 100 240 2 500 150 4.5 TO-92 11 N BC239C NPN Si 300 150 30 30 5 100 420 2 800 150 4.5 TO-92 11 AEG,F,GE,Mo ITT,Sp,u BC239C-92 NPN Si 300 150 30 30 5 100 450 2 900 150 4.5 TO-92 11 N BC239P NPN Si 30GL 150 30 30 5 100 120 2 220 150 4.5 TO-92 06 Fe BC25Q PNP Si 300 130 -20 -20 -5 100 35 600 125 6 TO-92 11 u BC250A PNP Si 300 130 -20 -20 -5 100 35 100 150 6 TO-92 11 ITT.u BC250B PNP Si 300 130 -20 -20 -5 100 80 250 150 6 TO-92 11 ITT.u BC25DC PNP Si 300 130 -20 -20 -5 100 200 600 150 6 TO-92 11 ITT,u BC251 PNP Si 300 130 -45 -45 -5 100 125 900 125 6 TO-92 12 u BC251A PNP Si 300 130 -45 -45 -5 100 125 260 150 6 TO-92 11 ITT.u BC257B PNP Si 300 130 -45 -1*5 -5 100 250 500 150 6 TO-92 11 ITT.u BC251C PNP Si 300 130 -45 -k5 -5 100 450 900 150 6 TO-92 11 ITT.u BC252 PNP Si 300 130 -20 -20 -5 100 125 900 125 6 TO-92 12 u BC252A PNP Si 300 130 -20 -20 -5 100 125 260 150 6 TO-92 11 ITT.u BC252B PNP Si 300 130 -20 -20 -5 100 240 500 150 6 TO-92 11 ITT,u BC252C PNP Si 300 130 -20 -20 -5 100 450 900 150 6 TO-92 11 ITT,u BC253 PNP Si 300 130 -20 -20 -5 100 220 2 900 125 6 TO-92 12 u BC253A PNP Si 300 130 -20 -20 -5 100 220 2 260 150 6 TO-92 11 ITT Transistors, General h Type Polarity Material MPtaoxt. Typ. VCABb0s oluVtCeE 0M ax . VERBa0t ingsx c Mln. aFtE mA Max. MTaJx . MCa0xB. OuCtalsien e ILnefaod. Manufacturer (mW) (MHz) (V) (V) (V) (mA) (°C) (pF) BC253B PIMP Si 3QD 130 -20 -20 -5 100 2<*0 2 500 150 6 TO-92 11 ITT,u BC253C PNP Si 300 130 -20 -20 -5 100 <*50 2 900 150 6 TO-92 11 ITT,u BC256A PNP Si 300 130 -6k -6k -5 100 120 2 220 150 6 TO-92 11 ITT BC256B PIMP Si 300 130 -6k -6k -5 100 180 2 t»60 150 6 TO-92 11 ITT BC257 PNP Si 300 130 -k5 -k5 -5 100 120 2 £♦60 150 6 TO-92 09 F,u BC257A PIMP Si 300 130 -k5 -k5 -5 100 120 2 220 150 6 TO-92 09 F,Sp,u BC257B PIMP Si 300 130 -k5 -k5 -5 100 180 2 <t60 150 6 TO-92 09 F,Sp,u BC258 PIMP Si 300 130 -25 -25 -5 100 120 2 800 150 6 TO-92 09 Ffu BC258A PNP Si 300 130 -25 -25 -5 100 120 2 220 150 6 TO-92 09 F,Sp,u BC258B PNP Si 300 130 -25 -25 -5 100 180 2 <460 150 6 TO-92 09 F,Sp,u BC258C PNP Si 300 130 -25 -25 -5 100 380 2 BOO 150 6 TO-92 09 F,Sp,u BC259 PNP Si 300 130 -20 -20 -5 100 180 2 800 150 6 TO-92 09 F,u BC2598 PNP Si 300 130 -20 -20 -5 100 180 2 £♦60 150 6 TO-92 09 F,Sp,u BC259C PNP Si 300 130 -20 -20 -5 100 380 2 800 150 6 TO-92 09 F,Sp,u BC260A PNP Si 300 180 -20 -20 -5 100 35 1 100 175 3 TO-18 05 ITT BC26DB PNP Si 300 180 -20 -20 -5 100 80 1 250 175 3 TO-18 05 ITT BC260C PNP Si 300 180 -20 -20 -5 100 200 1 600 175 3 TO-18 05 ITT BC261 PNP Si 360 150 -k5 -k5 -5 200 125 2 900 175 6 TO-18 05 u BC261A PNP Si 360 150 -k5 -k5 -5 200 125 2 900 175 6 TO-18 05 ITT,N,u BC2618 PNP Si 360 150 -k5 -k5 -5 200 2<*0 2 500 175 6 TO-18 05 ITT,N,u BC261C PNP Si 360 150 -k5 -k5 -5 200 <*50 2 900 175 6 TO-18 05 ITT,u BC262 PNP Si 360 150 -20 -20 -5 200 125 2 900 175 6 TO-18 05 u BC262A PNP Si 360 150 -20 -20 -5 200 125 2 260 175 6 TO-18 05 ITT,N,u BC262B PNP Si 360 150 -20 -20 -5 200 2^0 2 500 175 6 TO-18 05 ITT,N,u BC262C PNP Si 360 150 -20 -20 -5 200 <*50 2 900 175 6 TO-18 05 ITT.u BC263 PNP Si 360 150 -20 -20 -5 200 125 2 900 175 6 TO-18 05 u BC263A PNP Si 360 150 -20 -20 -5 200 125 2 260 175 6 TO-18 05 ITT,N,u BC263B PNP Si 360 150 -20 -20 -5 200 2<+0 2 500 175 6 TO-18 05 ITT,N,u BC263C PNP Si 360 150 -20 -20 -5 200 ^♦50 2 900 175 6 TO-18 05 ITT BC266 PNP Si 300 130 -6k -6*+ -5 100 125 2 500 175 6 TO-18 05 u BC266A PNP Si 300 130 -6k -6k -5 100 125 2 260 175 6 TO-18 05 ITT BC26GB PNP Si 300 130 -6k -6k -5 100 2*t0 2 500 175 6 TO-18 05 ITT BC267 NPN Si 375 150 50 k5 6 500 125 2 500 175 12 TO-18 05 u BC268 NPN Si 375 150 30 20 6 500 125 2 900 175 12 TO-18 05 u BC269 NPN Si 375 150 30 20 6 500 2i*0 2 900 175 12 TO-18 05 u BC263 PNP Si <*00 100 -30 -30 -5 600 kO 50 270 200 12 TO-18 05 u BC286 NPN Si 800 100 70 60 5 1A 20 500 180 200 20 TO-39 08 F BC287 PNP Si 800 100 -60 -60 -5 _1A 20 500 200 200 25 TO-39 08 F,u BC288 NPN Si 800 ka 80 kO 6 5A 20 2A - 200 70 TO-39 08 SGS BC29i» PNP Si 600 - -60 -60 -5 600 100 150 300 200 - TO-5 08 u BC297 PNP Si 375 100 -50 -k5 -5 1A 75 100 260 175 12 TO-16 05 SGS,u BC29B PNP Si 375 100 -30 -25 -5 1A 75 100 500 175 12 TO-18 05 SGS,u BC300 NPN Si 850 120 120 80 6 1A kO 150 2i»0 175 10 TO-39 08 SGS,TIfu BC300-** NPN Si 850 120 120 80 6 1A kO 150 80 175 10 TO-39 08 u BC3DD-5 NPN Si 850 120 120 80 6 1A 70 150 1<*0 175 10 TO-39 08 u BC300-6 NPN Si 850 120 120 80 6 1A 120 150 2**0 175 10 TO-39 08 u BC301 NPN Si 850 120 90 60 6 1A kQ 150 2**0 175 15 TO-39 08 SGS,TI,u BC302 NPN Si 850 120 60 k5 6 1A kO 150 2^0 175 10 TO-39 08 SGS,TI,u BC302-<» NPN Si 850 120 60 k5 6 1A kO 150 80 175 10 TO-39 08 u BC302-5 NPN Si 850 120 60 k5 6 1A 70 150 1<»0 175 10 TO-39 08 u BC302-6 NPN Si 850 120 60 k5 6 1A 120 150 2<+0 175 10 TO-39 08 u BC303 PNP Si 850 120 -85 -60 -7 500 kO 150 2i»0 175 10 TO-39 08 SGS,TI,u BC303-** PNP Si 850 120 -85 -60 -7 500 kO 150 80 175 10 TO-39 08 u BC303-5 PNP Si 850 120 -85 -60 -7 500 70 150 UO 175 10 TO-39 08 u BC303-6 PNP Si 850 120 -85 -60 -7 500 120 150 2it0 175 10 TO-39 08 u BC30<* PNP Si 850 120 -60 -k5 -7 500 kO 150 2**0 175 10 TO-39 08 SGS,TI,u BC30*»-<* PNP Si 850 120 -60 -k5 -7 500 kO 150 80 175 10 TO-39 08 u BC3Di»-5 PNP Si 850 120 -60 -k5 -7 500 70 150 1M3 175 10 TO-39 08 u BC304-6 PNP Si 850 120 -60 -k5 -7 500 120 150 2<t0 175 10 TO-39 08 u BC307 PNP Si 300 130 -50 -k5 -5 100 110 2 220 150 k.5 TO-92 11 AEGfF,GE,Mo BC307-92 PNP Si 300 130 -50 -k5 -5 100 75 2 500 150 k.5 TO-92 N BC3Q7A PNP Si 300 130 -50 -k5 -5 100 110 2 220 150 k.5 TO-92 AEG,F,GE,ITT, Mo,Sp,u BC3D7A-92 PNP Si 300 130 -50 -k5 -5 100 125 2 260 150 k.5 To-92 N BC3D7B PNP Si 300 130 -50 -k5 -5 100 200 2 <t50 150 k.5 TO-92 AEG,F,ITT, Mo,Spfu BC307B-92 PNP Si 300 130 -50 -k5 -5 100 2^0 2 500 150 k.5 TO-92 N BC3D7C PNP Si 300 130 -50 -k5 -5 100 <*20 2 800 150 k.5 TO-92 AEG,ITT,Mo BC3Q7P PNP Si 300 130 -50 -k5 -5 100 120 2 220 150 k.5 TO-92 06 Fe BC3D7\/I PNP Si 300 130 -50 -k5 -5 100 70 2 1<*0 150 k.5 TO-92 12 AEG,u BC308 PNP Si 300 130 -30 -25 -5 100 110 2 220 150 k.5 TO-92 11 AEG,F,GE,Mo

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Semiconductor Data Book. Characteristics of approx. 10,000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs PDF

180 Pages·1981·4.95 MB·English
by  A. M. Ball (Auth.)
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Preview Semiconductor Data Book. Characteristics of approx. 10,000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs

Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconducttors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books is an imprint of the Butterworth Group which has principal offices in London, Sydney, Toronto, Wellington, Durban and Boston First published 1949 Eleventh edition 1981 © Butterworth & Co. (Publishers) Ltd, 1981 All rights reserved. No part of thrspublication may be reproduced or transmitted in any form or by any means, including photocopying and recording, without the written permission of the copyright holder, application for which should be addressed to the Publishers. Such written permission must also be obtained before any part of this publication is stored in a retrieval system of any nature. This book is sold subject to the Standard Conditions of Sale of Net Books and may not be re-sold in the UK below the net price given by the Publishers in their current price list. British Library Cataloguing in Publication Data Semiconductor data book. - 11th ed. 1. Semiconductors - Tables 2. Radio - Apparatus and supplies I. Ball, Anthony Michael 621.3841'34 TK6565.S/ ISBN 0-408-00479-7 Typeset by Butterworths Litho Preparation Department Printed in England by Spottiswoode Ballantyne Ltd., Colchester, Essex INTRODUCTION In compiling the 11th edition of this reference both cumbersome and unnecessary. In consequ­ manual, considerable revision has taken place with ence this edition now contains device details in an emphasis on presentation of data in an easier-to- alpha-numeric sequence with an indication of the find style. Previous editions have entailed consider­ manufacturer given in code form in the last column. able cross referencing with subsequent frustration. A code key follows this introduction. With so few valves now being available the entire Finally I must extend my sincere gratitude to all thermionic section has been omitted allowing con­ manufacturers whose kind assistance has made this centration on the considerable range of semicon­ revision possible and from whose data the tables ductor devices. have been compiled. Previous methods of including devices in manufacturers' named sections have proved to be EXPLANATION OF THE TABLES GENERAL All ratings and characteristics referred to in these represent the extreme capabilities of the device and tables are at 25°C ambient temperature unless other­ are not recommended as design characteristics. wise stated. Lead identification details are given after the data The values quoted for Absolute Maximum Ratings sections. should never be exceeded in normal use. They COLUMN HEADINGS CQB Output capacitance Tj Junction temperature f Unity, common-emitter, current gain fre­ V Drain to source voltage T ds quency V Gate to drain voltage gd hFE Large signal current gain, common emitter Vgs Gate to sou rce voltage lc Continuous collector current VCBO Collector to base voltage, emitter open circuit lg Continuous gate current VCEO Collector to emitter voltage, base open circuit P Power dissipation d V Emitter to base voltage, collector open circuit EBO P t Maximum power dissipation to CONSTRUCTION N N-channel P P-channel Ge Germanium Si Silicon INTRODUCTION In compiling the 11th edition of this reference both cumbersome and unnecessary. In consequ­ manual, considerable revision has taken place with ence this edition now contains device details in an emphasis on presentation of data in an easier-to- alpha-numeric sequence with an indication of the find style. Previous editions have entailed consider­ manufacturer given in code form in the last column. able cross referencing with subsequent frustration. A code key follows this introduction. With so few valves now being available the entire Finally I must extend my sincere gratitude to all thermionic section has been omitted allowing con­ manufacturers whose kind assistance has made this centration on the considerable range of semicon­ revision possible and from whose data the tables ductor devices. have been compiled. Previous methods of including devices in manufacturers' named sections have proved to be EXPLANATION OF THE TABLES GENERAL All ratings and characteristics referred to in these represent the extreme capabilities of the device and tables are at 25°C ambient temperature unless other­ are not recommended as design characteristics. wise stated. Lead identification details are given after the data The values quoted for Absolute Maximum Ratings sections. should never be exceeded in normal use. They COLUMN HEADINGS CQB Output capacitance Tj Junction temperature f Unity, common-emitter, current gain fre­ V Drain to source voltage T ds quency V Gate to drain voltage gd hFE Large signal current gain, common emitter Vgs Gate to sou rce voltage lc Continuous collector current VCBO Collector to base voltage, emitter open circuit lg Continuous gate current VCEO Collector to emitter voltage, base open circuit P Power dissipation d V Emitter to base voltage, collector open circuit EBO P t Maximum power dissipation to CONSTRUCTION N N-channel P P-channel Ge Germanium Si Silicon Manufacturer's Codes and Addresses CODE MANUFACTURER AEC AEC Telefunken (UK) Ltd, Bath Road, Slough, Berks SL1 4AW F Fairchild Semiconductors Ltd, Station Road, Barnet, Herts Fe Ferranti Ltd, Hollinwood, Lanes OL9 755 G General Instruments (UK) Ltd, Cock Lane, High Wycombe, Bucks IR International Rectifier Co. (UK) Ltd, Hurst Green, Oxted, Surrey RH8 9BB ITT ITT Semiconductors, Maidstone Road, Footscray, Sidcup, Kent DA14 5HT J Japanese L Lambda Electronics Ltd., Abbey Born Road, High Wycombe, Bucks M Mullard Ltd, Mullard House, Torrington Place, London WC1E7HD Mo Motorola Ltd, York House, Empire Way, Wembley, Middlesex HA9 OPR N National Semiconductors (UK) Ltd, 19 Goldington Road, Bedford MK40 3LF P Plessey Optoelectronics Ltd, Wood Burcote Way, Towcester, Northants NN12 7JN R Remo Rectifier Int. Ltd, 17 Adams House, The High, Harlow, Essex RCA RCA Ltd, Lincoln Way, Sunbury-on-Thames, Middlesex TW16 7HW S Siliconix Ltd, 30A High Street, Thatcham, Newbury, Berks RG13 4JG Se Semikron (UK) Ltd, 4 Marshgate Drive, Hertford Sem Semitron Ltd, Cricklade, Swindon, Wilts SGS SGS-ATES (UK) Ltd, Planar House, Walton Street, Aylesbury, Bucks Sp Sprague Electric (UK) Ltd, 159 High Street, Yiewsley, West Drayton, Middlesex UB7 7RY STC Silicon Transistor (BBF) Ltd, Seronera House, Linden Chase, Sevenoaks, Kent TN13 3JU T Teledyne Semiconductors, Heathrow House, Bath Road, Cranford, Middlesex TW5 9QP Tl Texas Instruments, Manton Lane, Bedford MK41 7PA V Varo Semiconductors Int. Inc., Deepdene House, Bellgrave Road, Welling, Kent Vi Vitality Ltd, Beetans Way, Bury-St-Edmunds, Suffolk u Micro Electronics Ltd, York House, Empire Way, Wembley, Middlesex HA9 OPR Transistors, General h P f Absolute Max. Ratings C FE Type Polarity Material Mtaoxt. TyTp . VCB0 VCE0 VEB0 xc Min. at mA Max. MaDx. Ma0xB. OuCtalsien e ILnefaod. Manufacturer (mli)) (MHz) (V) (V) (V) (mA) (C) (pF) AC127 NPN Ge 3^0 2.5 32 12 10 500 50 @ 500 (typ) 90 UO TO-1 01 M AC 128 PNP Ge 700 1 -32 -16 -10 1A 80 S 1A (typ] 100 200 TO-1 01 M AC 187 NPN Ge 800 1 25 15 10 2A 100 300 500 90 180 TO-1 01 M AC 188 PNP Ge 800 1 -25 -15 -10 2A 200 @ 300 (typ) 90 110 TO-1 01 M ADU9 PNP Ge 22.5W 0.5 -50 -30 -20 3.5A 80 @ 1A (typ] 100 200 TO-3 02 M AD161 NPN Ge i+UJ 1 32 20 10 3A 100 200 500 90 150 TD-3 02 M AD162 PNP Ge 6U 1 -32 -20 -10 3A 80 500 320 90 115 SO-55 02 M AF106 PNP Ge 60 220 -25 -18 -0.3 10 25 1 - 90 - TO-72 03 AEG AF109R PNP Ge 60 200 -20 -15 -0.3 10 20 1.5 - 90 - TO-72 03 AEG AF139 PNP Ge 60 550 -20 -15 -0.3 10 10 1.5 - 90 - TO-72 03 AEG _ _ AF239 PNP Ge 60 650 -15 -15. -0.3 10 10 2 90 TO-72 03 AEG AF239S PNP Ge 60 650 -15 -15 -0.3 10 10 2 - 90 - TO-72 03 AEG AF279 PNP Ge 60 780 -15 -15 -0.3 10 10 2 - 90 - TO-50 Ok AEG AF280 PNP Ge 60 550 -15 -15 -0.3 10 10 2 - 90 - TO-50 Ok AEG B130A NPN Si 120U - (*00 <*00 5 15A 700 2.5A - 175 - TO-3 02 SGS _ _ - B130B NPN Si 120LJ <*00 <*00 5 15A 700 2.5A 175 TO-3 02 SGS B130C NPN Si 120U _ 350 350 5 15A 700 2.5A - 175 - TO-3 02 SGS B133A NPN Si 100U1 - t*00 1»00 5 10A 500 2.5A - 175 - TO-3 02 SGS B133B NPN Si 100W _ <*00 UDQ 5 10A 500 2.5A - 175 - TO-3 02 SGS B133C NPN Si 100U - 350 350 5 10A 500 2.5A - 175 - TO-3 02 SGS BC107 NPN Si 300 250 50 1*5 6 100 120 2 220 175 6 TO-18 05 AEG,Fe,M,Mo,N, SGS.TI.u BC107A NPN Si 300 250 50 1*5 6 100 120 2 220 175 6 T0r18 05 AEG.ITT.M.N, Sp.u BC107B NPN Si 300 250 50 1*5 6 100 180 2 ueo 175 6 TO-18 05 AEG.ITT.M.N, S.p.u BC107P NPN Si 300 250 50 1*5 6 100 120 2 220 175 6 TO-92 06 Fe BC108 NPN Si 300 250 30 20 5 100 120 2 220 175 6 TO-18 05 AEG.Fe.M.Mo, N.SGS.TI BC108A NPN Si 300 250 30 20 5 100 120 2 220 175 6 TO-18 05 AEG.ITT.N.Sp.u BC108B NPN Si 300 250 30 20 5 100 180 2 <*60 175 6 TO-18 05 AEG,ITT,N,Sp,u BC108C NPN Si 300 250 30 20 5 100 380 2 800 175 6 TO-18 05 AEG.ITT.N.Sp.u BC108P NPN Si 300 250 30 20 5 100 120 2 220 175 6 TO-92 06 Fe BC109 NPN Si 300 300 30 20 5 50 200 2 U50T 175 6 TO-18 05 AEG.Fe.M.Mo.N, SGS.TI.u BC109B NPN Si 300 300 30 20 5 50 180 2 1*60 175 6 TO-18 05 AEG.ITT.M.N, Sp.u BC109C NPN Si 300 300 30 20 5 50 380 2 800 175 6 TO-18 05 AEG.ITT.M.N, Sp.u BC109P NPN Si 300 300 30 20 5 50 120 2 220 175 6 TO-92 06 Fe BC110 NPN Si 300 100 80 80 8 50 30 2 . 175 5 TO-18 05 Sp BC113 NPN Si 200 60 30 25 6 50 200 1 1000 125 k TO-106 07 SGS.u BC114 NPN Si 200 60 30 25 6 50 200 1 1000 125 k TO-106 07 SGS,u BC115 NPN Si 200 kQ kO 30 5 200 100 10 <*00 125 25 TO-105 08 SGS BC116 PNP Si 300 200 -60 -U0 -5 600 1*0 150 120 125 8 TO-105 08 u BC11SA PNP Si 300 200 -60 -U0 -5 600 80 150 21*0 125 8 TO-105 08 SGS,u BC117 NPN Si 300 60 120 120 5 50 30 10 - 125 6 TO-105 08 u BC118 NPN Si 200 200 k5 1*5 k 100 kO 10 160 125 3.5 TO-106 07 SGS BC119 NPN Si 800 kO 60 30 5 1A 1*0 150 120 200 25 TO-39 08 F,SGS BC120 NPN Si 800 kQ 60 30 5 1A 20 150 - 200 25 T0-39 05 SGS _ BC125 NPN Si 300 kO 50 30 5 500 30 150 125 25 TO-105 08 SGS BC126 PNP Si 300 80 -35 -30 -5 600 30 150 120 125 a TO-105 08 SGS.u BC132 NPN Si 200 60 30 25 6 200 60 1 300 125 k TO-106 07 SGS BC13<» NPN Si 200 200 U5 k5 k 200 150 10 t*00 125 3.5 TO-106 07 SGS BC135 NPN Si 200 200 1*5 1*5 5 200 50 10 - 125 3.5 TO-106 07 SGS BC136 NPN Si 300 60 60 kO 5 500 30 10 - 125 25 TO-106 07 u BC137 PNP si 300 60 -kQ -kO -5 600 25 50 - 125 5 TO-105 08 u BC138 NPN Si 800 kO 60 1*0 5 1A 35 500 - 200 25 TO-5 08 u BC139 PNP Si 700 kO -kO -kO -5 500 kO 100 - 200 10 TO-39 08 F,u BCUO NPN Si 650 50 80 kO 7 1A 1*0 100 95 175 25 TO-39 08 AEG,F,Fe,Mo, N,SGS,u BCHtO-6 NPN Si 650 50 80 1*0 7 1A 1*0 100 95 175 25 TO-39 08 AEG.F.N.Sp.u BCUO-10 NPN Si 650 50 80 1*0 7 1A 67 100 150 175 25 TO-39 08 AEGfF,N,Sp,u BCUO-16 NPN Si 650 50 80 kO 7 1A 106 100 236 175 25 TO-39 08 AEG,F,N,Sp,u BCK+0-25 NPN Si 650 50 80 t*0 7 1A 160 100 i»00 175 25 TO-39 08 F BC1M NPN Si 650 50 100 60 7 1A 1*0 100 95 175 25 TO-39 D8 AEG.F.Fe.Mo, N.SGS.u BC1U1-6 NPN Si 650 50 100 60 7 1A kO 100 95 175 25 TO-39 08 AEG,F,N,Sp,u BC1M-10 NPN Si 650 50 100 60 7 1A 67 100 150 175 25 TO-39 08 F,N,Sp,u BC1M-16 NPN Si 650 50 100 60 7 1A 106 100 236 175 25 TO-39 08 F.Sp.u BC1^2 NPN Si 800 <*0 80 60 5 1A 20 200 - 200 20 TO-39 08 F.TI.u BC1W PNP Si 800 kQ -60 -60 -5 1A 20 200 - 200 20 TO-39 08 F,N,TI,u _ - BC1**5 NPN Si 300 120 120 5 100 30 5 125 6 TO-105 08 N BCK+6-1 NPN Si 50 60 20 20 k 50 80 0.2 200 125 20 TO-92 09 N BC1<*6-2 NPN Si 50 60 20 20 k 50 1l»0 0.2 350 125 20 TO-92 09 N Transistors, General P f Absolute Max . Ratings hFE Type Polarity Material Mtaoxt. TyTp . VCB0 VCE0 VEB0 Mln. at mA Max. Max. Max. OuCtalsien e ILnefaod. Manufacturer (mill) (MHz) (V) (V) (V) (mA) (°C) (pF) BC146-3 NPN Si 50 60 20 20 k 50 280 0.2 550 125 20 TO-92 09 N BC147 NPN Si 250 150 50 U5 6 200 110 2 125 5 SOT-25 10 M 8C147A NPN Si 250 150 50 U5 6 200 110 2 125 5 SOT-25 10 M BC147B NPIM Si 250 150 50 k5 6 200 200 2 - 125 5 SOT-25 10 M BC147C NPIM Si 250 150 50 1*5 6 200 420 2 125 5 SOT-25 10 M BCI^B NPN Si 250 150 30 20 5 200 110 2 125 5 SOT-25 10 M BC148A NPN Si 250 150 30 20 5 200 110 2 125 5 SOT-25 10 M BC148C NPN Si 250 150 30 20 5 200 1*20 2 125 5 SOT-25 10 M BC149 NPN Si 250 150 30 20 5 200 200 2 125 5 SOT-25 10 M BC149B NPN Si 250 150 30 20 5 200 200 2 125 5 SOT-25 10 M BC149C NPN Si 250 150 30 20 5 200 420 2 - 125 5 SOT-25 10 M BC153 PNP Si 200 kQ -kO -kO -5 100 50 10 125 6 TQ-106 07 SGS,u BC154 PNP Si 200 kO -kO -kO -5 100 160 10 125 6 TO-106 07 SGS,u BC157 PNP Si 300 150 -50 -50 -5 100 70 2 - 125 6 SOT-25 10 M BC158 PNP Si 300 150 -30 -30 -5 100 70 2 125 6 SOT-25 10 M BC158A PNP Si 300 100 -30 -25 -5 100 120 2 125 6 SOT-25 10 M BC158B PNP Si 300 100 -30 -25 -5 100 180 2 125 6 SOT-25 10 M BC159 PNP Si 300 100 -25 -20 -5 100 120 2 125 6 SOT-25 10 M BC159A PNP Si 300 100 -25 -20 -5 100 120 2 125 6 SOT-25 10 M BCteO PNP Si 650 50 -ko -kO -5 1A 40 100 95 175 30 TO-39 08 AEG,F,Fe,Mo N,u BC160-6 PNP Si 650 50 -kO -kQ -5 1A 40 100 95 175 30 TO-39 08 F,N,Sp,u BC160-10 PNP Si 650 50 -kQ -1*0 -5 1A 67 100 150 175 30 TO-39 08 F,N,Sp,u BC160-16 PNP Si 650 50 -kO -t*Q -5 1A 106 100 236 175 30 TO-39 08 F,N,Sp,u BC161 PNP Si 650 50 -60 -60 -5 1A <*0 100 95 175 30 TO-39 08 AEG,Fe,Mo,N,u BC161-6 PNP Si 650 50 -60 -60 -5 1A 1*0 100 95 175 30 TO-39 08 F,N,Sp,u BC 161-10 PNP Si 650 50 -60 -60 -5 1A 67 100 95 175 30 TO-39 08 F,N,Sp,u BC161-16 PNP Si 650 50 -60 -60 -5 1A 106 100 95 175 30 TO-39 08 F,N,Spfu BC161-25 PNP Si 650 50 -60 -60 -5 1A 160 100 400 175 30 TO-39 08 F BC167 NPN Si 375 85 k5 1*5 6 100 120 2 800 150 4.5 TO-92 09 F,N,SGS BC167A NPN Si 375 85 k5 k5 6 100 120 2 220 150 4.5 TO-92 09 F,N,SGS,Sp BC167B NPN Si 375 85 k5 1*5 6 100 180 2 460 150 k.5 TO-92 09 F,N,SGS,Sp BC16S NPN Si 375 85 30 20 5 100 120 2 800 150 k.5 TO-92 09 F,N,SGS BC168A NPN Si 375 85 30 20 5 100 120 2 220 150 k.5 TO-92 09 F,N,SGS,Sp BC168B NPN Si 375 85 30 20 5 100 180 2 460 150 k.5 TO-92 09 F,N,SGS,Sp BC16BC NPN Si 375 85 30 20 5 100 380 2 800 150 k.5 TO-92 09 F,N,SGS,Sp BC169 NPN Si 375 85 30 20 5 50 180 2 800 150 4.5 TO-92 09 F,N,SGS BC169C NPN Si 375 85 30 20 5 50 180 2 400 150 k.5 T0*-92 09 FfN,SGS,Sp BC169C NPN Si 375 85 30 20 5 50 380 2 800 150 k.5 TO-92 09 F,N,SGS,Sp BC170 NPN Si 300 100 20 20 5 100 35 1 100 150 4 TO-92 GE BC170A NPN Si 300 100 20 20 5 100 35 1 100 150 4 TO-92 ITT,SGS BC170B NPN Si 300 100 20 20 5 100 80 1 250 150 k TO-92 ITT.SGS BC170C NPN Si 300 100 20 20 5 100 200 1 600 150 4 TO-92 ITT.SGS BC171 NPN Si 300 150 50 1*5 6 100 125 2 500 150 6 TO-92 GE,SGS BC171A NPN Si 300 150 50 k5 6 100 125 2 260 150 6 TO-92 ITT,SGS BC171P NPN Si 300 150 50 U5 6 100 240 2 500 150 6 TO-92 ITT.SGS BC172 NPN Si 300 150 25 25 5 100 110 2 800 150 6 TO-92 SGS BC172 NPN Si 300 150 25 25 5 100 110 2 220 150 6 TO-92 ITT.SGS BC172B NPN Si 300 150 25 25 5 100 200 2 1*50 150 6 TO-92 ITT.SGS BC172C NPN Si 300 150 25 25 5 100 1*20 2 800 150 6 TO-92 ITT.SGS BC173B NPN Si 300 150 25 25 5 100 200 2 450 150 6 TO-92 ITTfSGS BC173C NPN Si 300 150 25 25 5 100 420 2 900 150 6 TO-92 ITT,SGS BC174A NPN Si 300 100 6k Sk 5 100 125 2 150 6 TO-39 08 ITT BC174B NPN Si 300 100 ek ■6k 5 100 240 2 150 6 TO-39 08 ITT BC177 PNP Si 300 130 -50 -U5 -5 100 110 2 220 175 4.5 TO-18 05 AEG.F.Mo.N.SGS TI,u BC177A PNP Si 300 130 -50 -1*5 -5 100 110 2 230 175 l*.5 TO-18 05 AEG,N,Sp,u RC177B PNP Si 300 130 -50 -k5 -5 100 200 2 £♦50 175 U.5 TO-18 05 AEG.F.N.Sp.u BC177C PNP Si 300 130 -50 -t*5 -5 100 420 2 800 175 i*.5 TO-18, 05 AEG.u BC177P PNP Si 300 130 -50 -1*5 -5 100 110 2 220 175 k.5 TO-92 06 Fe BC177\/I PNP Si 300 130 -50 -t*5 -5 100 70 2 130 175 k.5 TO-18 05 AEG.N BC178 PNP Si 300 130 -30 -25 -5 100 110 2 220 175 k.5 TO-18 05 AEG,F,Mo,NfSGS TI.u BC178A PNP Si 300 130 -30-25 -5 100 110 2 220 175 U.5 TO-18 05 AEG.N.Sp.u BC178B PNP Si 300 130 -30 -25 -5 100 200 2 450 175 k.5 TO-18 05 AEG.F.N.Sp.u BC178C PNP Si 300 130 -30 -25 -5 100 420 2 800 175 k.5 TO-18 05 AEG.Sp.u, BC178P PNP Si 300 130 -30 -25 -5 100 110 2 220 175 k.5 TO-92 06 Fe BC179 PNP Si 300 130 -25 -20 -5 100 110 2 220 175 k.5 TO-18 05 AEG.F.Mo.N.SGS TI,u BC179A PNP Si 300 130 -25 -20 -5 100 110 2 220 175 k.5 TO-18 05 AEG,F,N,u BC179B PNP Si 300 130 -25 -20 -5 100 200 2 450 175 k.5 TO-18 05 AEG.F.N.Sp.u Transistors, General P Absolute Max . Ratings hFE C Type Polarity Material tot U V U 0B Case Lead Manufacturer Max. Typ. CB0 CE0 EB0 xc Mln. at mA Max. Max. Max. Outline Info. (mtd) (MHz) (V) (V) (V) (mA) <°C) (pF) BC179C PIMP Si 300 130 -25 -20 -5 100 **20 2 800 175 k.5 TO-18 05 AEG,Spfu BC179P PNP Si 300 130 -25 -20 -5 100 110 2 220 175 *».5 TO-92 06 Fe BC1B2 NPN Si 300 280 60 50 6 200 100 2 i»ao 150 k.5 TO-92 12 AEGfF,Mo,N BC182A NPN Si 300 280 60 50 6 200 100 2 <*80 150 k.5 TO-92 11 AEG,F,GE,Mo,N, Sp BC1B2B NPN Si 300 280 60 50 6 200 100 2 **80 150 k.5 TO-92 11 AEG,F,Mo,N,Sp BC182K NPN Si 375 280 60 50 6 200 110 2 i»50 150 k.5 TO-92 11 u BC1B2KA NPN Si 375 280 60 50 6 200 110 2 220 150 k.5 TO-92 11 u BC182KB NPN Si 375 280 60 50 6 200 200 2 U50 150 k.5 TO-92 11 u BC182L NPN SI 375 280 60 50 6 200 110 2 **50 150 k.5 TO-92 09 F,N,TItu BC182LA NPN Si 375 280 60 50 6 200 110 2 220 150 k.5 TO-92 0? N,u BC182LB NPN Si 375 280 60 50 6 200 200 2 ^50 150 k.5 TO-92 09 |\J,u BC182P NPN Si 300 280 60 50 6 200 100 2 t+BO 150 k.5 TO-92 06 Fe BC183 NPN Si 300 150 k5 30 5 200 100 2 850 150 k.5 TO-92 09 F,N BC183A NPN Si 300 150 k5 30 5 200 125 2 260 150 k.5 TO-92 11 F,N BC183B NPN Si 300 150 k5 30 5 200 2t»0 2 500 150 k.5 TO-92 11 F,N BC183C NPN Si 300 150 k5 30 5 200 t»50 2 900 150 k.5 TO-92 11 F,N BC183KA NPN Si 375 150 k5 30 5 200 110 2 800 150 k.5 TO-92 11 u BC183KB NPN Si 375 150 k5 30 5 200 110 2 220 150 k.5 TO-92 11 u BC183KC NPN Si 375 150 k5 30 5 200 200 2 1*50 150 k.5 TO-92 11 u BC183L NPN Si 375 150 k5 30 5 200 100 2 850 150 k.5 TO-92 09 F,N,TI BC183LA NPN Si 375 150 1*5 30 5 200 110 2 800 150 k.5 TO-92 09 N,u BC183LB NPN Si 375 150 1*5 30 5 200 110 2 220 150 k.5 T9-92 09 N,u BC183LC NPN Si 375 150 1*5 30 5 200 200 2 t*50 150 k.5 TO-92 09 N,u BC183P NPN Si 300 150 1*5 30 5 200 100 2 850 150 k.5 TO-92 06 Fe BC18*» NPN Si 300 150 1*5 30 5 200 2**0 2 900 150 k.5 TO-92 05 F,N BC18^B NPN Si 300 150 1*5 30 5 200 2t*0 2 500 150 k.5 TO-92 11 F,N BC18^C NPN Si 300 150 k5 30 5 203 U50 2 900 15U k.5 TO-92 11 N BC18i»K NPN Si 375 150 1*5 30 5 200 200 2 800 150 k.5 TO-92 11 u BC18i»KB NPN Si 375 150 U5 30 5 200 200 2 <+50 150 k.5 TO-92 11 u BC18^KC NPN Si 375 150 U5 30 5 200 1*20 2 800 150 k.5 TO-92 11 u BC18M NPN Si 375 150 1*5 30 5 200 260 2 BOO 150 k.5 TO-92 09 F,N,TI,u BC18M.B NPN Si 375 150 1*5 30 5 200 200 2 1*50 150 k.5 TO-92 09 N,u BC1BM.C NPN Si 375 150 1*5 30 5 200 <*20 2 800 150 k.5 TO-92 09 N,u BC18t»P NPN Si 300 150 U5 30 5 200 250 2 - 150 k.5 TO-92 06 Fe BC20<* PNP Si 203 100 -50 -k5 -5 100 50 2 *»50 125 k TO-106 07 SGS.u BC2Qi»A PNP Si 200 100 -50 -t*5 -5 100 110 2 220 125 k TO-106 07 u BC20<*B PNP Si 200 100 -50 -*»5 -5 100 200 2 1*50 125 k TO-106 07 u BC2£ttYI PNP Si 200 100 -50 -1*5 -5 100 50 2 120 125 k TO-106 07 u BC205 PNP Si 200 100 -25 -20 -5 100 50 2 1*50 125 k TO-106 07 SGS,u BC205A PNP Si 200 100 -25 -20 -5 103 110 2 220 125 k TO-106 07 u BC205B PNP Si 200 100 -25 -20 -5 100 200 2 **50 125 k TO-106 07 u BC206 PNP Si 200 100 -25 -20 -5 100 110 2 £♦50 125 k TO-106 07 SGS,u BC206A PNP Si 20: 100 -25 -20 -5 100 110 2 220 125 k TO-106 07 u BC206B PNP Si 200 100 -25 -20 -5 100 200 2 <*50 125 k TO-106 07 u BC2D7 NPN Si 300 150 50 h5 5 100 110 2 *450 125 6 TO-106 07 SGS.u BC207A NPN Si 300 150 50 k5 5 100 110 2 220 125 6 TO-106 07 u BC207B NPN Si 300 150 50 1*5 5 100 200 2 <*50 125 6 TO-106 07 u BC2D7C NPN Si 300 150 50 1*5 5 100 <4 20 2 800 125 6 TO-106 07 u BC2Q8 NPN Si 300 150 25 20 5 100 110 2 BOO 125 6 TO-106 07 SGS,u BC208A NPN Si 300 150 25 20 5 100 110 2 220 125 6 TO-106 07 u BC2D8B NPN Si 300 150 25 20 5 100 200 2 ^50 125 6 TO-106 07 u BC208C NPN Si 300 150 25 20 5 100 U20 2 800 125 6 TO-106 07 u BC209 NPN Si 300 150 25 20 5 100 200 2 8(/o 125 6 TO-106 07 SGS,u BC2Q9B NPN Si 300 150 25 20 5 100 200 2 iy50 125 6 TO-106 07 u BC209C NPN Si 300 150 25 20 5 100 **20 2 800 125 6 TO-106 07 u BC211 NPN Si 800 30 80 kO 7 1A kO 300 250 175 6 TO-39 08 u BC211A NPN Si 800 50 80 60 5 1A kO 150 250 175 25 TO-39 OB u BC212 PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 11 AEG,F,GE,Mo,N BC212A PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 11 AEG,F,GE,Mo, N,Sp BC212B PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 11 AEG,F,Mo,N,Sp BC212K PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 11 u BC212KA PNP Si 300 350 -60 -50 -5 200 100 2 300 150 5 TO-92 11 u BC212KB PNP Si 300 350 -60 -50 -5 200 200 2 <400 150 5 TO-92 11 u BC212L PNP Si 300 350 -60 -50 -5 200 60 2 300 150 5 TO-92 09 F,N,TI,u BC212LA PNP Si 300 350 -60 -50 -5 200 100 2 300 150 5 TO-92 09 N,u BC212LB PNP Si 300 350 -60 -50 -5 200 200 2 <*00 150 5 TO-92 09 N,u BC212P PNP Si 300 350 -60 -50 -5 200 60 2 <*00 150 5 TO-92 06 Fe BC213 PNP Si 300 350 -k5 -30 -5 200 80 2 600 150 10 TO-92 11 F,N Transistors, General Type Piolarity Material MPtaoxt. Typ. VCABb0s oluVtCeE 0M ax . VERaBt0i ngsh Mln. haFtE mA Max. MTaJx . MCa0xB. OuCtalsien e ILnefaod. Manufacturer (mU) (MHz) (V) (V) (V) (mA) C°C) (pF) BC213A PNP Si 300 350 -45 -30 -5 200 100 2 300 150 10 TO-92 11 F,N BC213B PNP Si 300 350 -45 -30 -5 200 200 2 400 150 10 TO-92 11 F.N BC213C PNP Si 300 350 -45 -30 -5 200 350 2 600 150 10 TO-92 11 N BC213K PNP Si 300 350 -1*5 -30 -5 200 80 2 400 150 10 TO-92 11 u BC213KA PNP Si 300 350 -1*5 -30 -5 200 100 2 300 150 10 TO-92 11 u BC213KB PNP Si 300 350 -k5 -30 -5 200 200 2 400 150 10 TO-92 11 u BC213KC PNP Si 300 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 11 u BC213L PNP Si 300 350 -i*5 -30 -5 200 80 2 400 150 10 TO-92 09 F,N,TI,u BC213LA PNP Si 300 350 -1*5 -30 -5 200 100 2 300 150 10 TO-92 09 N,u BC213LB PNP Si 300 350 -1*5 -30 -5 200 100 2 400 150 10 TO-92 09 N,u BC213LC PNP Si 300 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 09 N,u BC213P PNP Si 300 350 -t*5 -30 -5 200 80 2 600 150 10 TO-92 06 Fe BC214 PNP Si 300 350 -k5 -30 -5 200 140 2 600 150 10 TO-92 11 F,N BC214A PNP Si 300 350 -1*5 -30 -5 200 100 2 300 150 10 TO-92 12 N BC214B PNP Si 300 350 -1*5 -30 -5 200 200 2 400 150 10 TO-92 11 F,N BC214C PNP Si 300 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 11 F,N BC214K PNP Si 300 350 -1*5 -30 -5 200 140 2 400 150 10 TO-92 11 u BC214KA PNP Si 300 350 -1*5 -30 -5 200 100 2 300 150 10 TO-92 11 u BC214KB PNP Si 300 350 -1*5 -30 -5 200 200 2 400 150 10 TO-92 11 u BC214KC PNP Si 300 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 11 u BC214L PNP Si 300 350 -45 -30 -5 200 140 2 400 150 10 TO-92 09 F,N,TI,u BC214LA PNP Si 300 350 -k5 -30 -5 200 100 2 300 150 10 TO-92 09 u BC214LB PNP Si 300 350 -1*5 -30 -5 200 200 2 400 150 10 TO-92 09 N,u BC214LC PNP Si 308 350 -1*5 -30 -5 200 350 2 600 150 10 TO-92 09 N,u BC214P PNP Si 300 350 -U5 -30 -5 200 140 2 600 150 10 TO-92 06 Fe BC221 PNP Si 300 75 -30 -30 -5 500 50 10 115 150 15 TO-105 08 u BC237 NPN -Si 375 150 50 45 6 100 110 2 450 150 4.5 TO-92 11 AEG,F,GE,Mo,u BC237-92 NPN Si 300 150 50 45 6 100 125 2 500 150 4.5 TO-92 11 N BC237A NPN Si 300 150 50 i*5 6 100 110 2 220 150 4.5 TO-92 11 AEGfF,GE,ITT, Mo,Sp,u BC237A-92 NPN Si 300 15D 50 k5 6 100 125 2 500 150 4.5 TO-92 11 N BC237B NPN Si 375 150 50 1*5 6 100 200 2 450 150 4.5 TO-92 11 AEG,F,GE,ITT, Mo,Sp,u BC237B-92 NPN Si 300 150 50 1*5 6 100 240 2 500 150 4.5 TO-92 11 N BC237P NPN Si 300 150 50 45 5 100 120 2 220 150 4.5 TO-92 06 Fe BC238 NPN Si 300 150 30 30 5 100 110 2 800 150 4.5 TO-92 11 AEG,F,Fe,GE,Mo,u BC238-92 NPN Si 300 150 30 30 5 100 125 2 900 150 4.5 TO-92 11 N BC238A NPN Si 300 150 30 30 5 100 110 2 220 150 4.5 TO-92 11 AEG,F,GE,Mo,ITT Sp,u BC238A-92 NPN Si 300 150 30 30 5 100 125 2 260 150 4.5 TO-92 11 N BC238B NPN Si 300 150 30 30 5 100 200 2 450 150 4.5 TO-92 11 AEG,F,GE,Mo, ITT,Sp,u BC238B-92 NPN Si 300 150 30 30 5 100 240 2 500 150 4.5 TO-92 11 N BC238C NPN Si 300 150 30 30 5 100 420 2 800 150 4.5 TO-92 11 AEG,F,GE,Mo, ITT,Sp,u BC238C-92 NPN Si 300 150 30 30 5 100 l*5Q 2 900 150 4.5 TO-92 11 N BC238P NPN Si 300 150 30 30 5 100 120 2 220 150 4.5 TO-92 06 Fe BC239 UPN Si 300 150 30 30 5 100 200 2 800 150 4.5 TO-92 11 AEG,FfFe,Mo, GE,u BC239-92 NPN Si 300 150 30 30 5 100 2k0 2 900 150 4.5 TO-92 11 N BC239B NPN Si 300 150 30 30 5 100 200 2 450 150 4.5 TO-92 11 AEG,F,GE,Mo, ITT,Sp,u BC239B-92 NPN Si 300 150 30 30 5 100 240 2 500 150 4.5 TO-92 11 N BC239C NPN Si 300 150 30 30 5 100 420 2 800 150 4.5 TO-92 11 AEG,F,GE,Mo ITT,Sp,u BC239C-92 NPN Si 300 150 30 30 5 100 450 2 900 150 4.5 TO-92 11 N BC239P NPN Si 30GL 150 30 30 5 100 120 2 220 150 4.5 TO-92 06 Fe BC25Q PNP Si 300 130 -20 -20 -5 100 35 600 125 6 TO-92 11 u BC250A PNP Si 300 130 -20 -20 -5 100 35 100 150 6 TO-92 11 ITT.u BC250B PNP Si 300 130 -20 -20 -5 100 80 250 150 6 TO-92 11 ITT.u BC25DC PNP Si 300 130 -20 -20 -5 100 200 600 150 6 TO-92 11 ITT,u BC251 PNP Si 300 130 -45 -45 -5 100 125 900 125 6 TO-92 12 u BC251A PNP Si 300 130 -45 -45 -5 100 125 260 150 6 TO-92 11 ITT.u BC257B PNP Si 300 130 -45 -1*5 -5 100 250 500 150 6 TO-92 11 ITT.u BC251C PNP Si 300 130 -45 -k5 -5 100 450 900 150 6 TO-92 11 ITT.u BC252 PNP Si 300 130 -20 -20 -5 100 125 900 125 6 TO-92 12 u BC252A PNP Si 300 130 -20 -20 -5 100 125 260 150 6 TO-92 11 ITT.u BC252B PNP Si 300 130 -20 -20 -5 100 240 500 150 6 TO-92 11 ITT,u BC252C PNP Si 300 130 -20 -20 -5 100 450 900 150 6 TO-92 11 ITT,u BC253 PNP Si 300 130 -20 -20 -5 100 220 2 900 125 6 TO-92 12 u BC253A PNP Si 300 130 -20 -20 -5 100 220 2 260 150 6 TO-92 11 ITT Transistors, General h Type Polarity Material MPtaoxt. Typ. VCABb0s oluVtCeE 0M ax . VERBa0t ingsx c Mln. aFtE mA Max. MTaJx . MCa0xB. OuCtalsien e ILnefaod. Manufacturer (mW) (MHz) (V) (V) (V) (mA) (°C) (pF) BC253B PIMP Si 3QD 130 -20 -20 -5 100 2<*0 2 500 150 6 TO-92 11 ITT,u BC253C PNP Si 300 130 -20 -20 -5 100 <*50 2 900 150 6 TO-92 11 ITT,u BC256A PNP Si 300 130 -6k -6k -5 100 120 2 220 150 6 TO-92 11 ITT BC256B PIMP Si 300 130 -6k -6k -5 100 180 2 t»60 150 6 TO-92 11 ITT BC257 PNP Si 300 130 -k5 -k5 -5 100 120 2 £♦60 150 6 TO-92 09 F,u BC257A PIMP Si 300 130 -k5 -k5 -5 100 120 2 220 150 6 TO-92 09 F,Sp,u BC257B PIMP Si 300 130 -k5 -k5 -5 100 180 2 <t60 150 6 TO-92 09 F,Sp,u BC258 PIMP Si 300 130 -25 -25 -5 100 120 2 800 150 6 TO-92 09 Ffu BC258A PNP Si 300 130 -25 -25 -5 100 120 2 220 150 6 TO-92 09 F,Sp,u BC258B PNP Si 300 130 -25 -25 -5 100 180 2 <460 150 6 TO-92 09 F,Sp,u BC258C PNP Si 300 130 -25 -25 -5 100 380 2 BOO 150 6 TO-92 09 F,Sp,u BC259 PNP Si 300 130 -20 -20 -5 100 180 2 800 150 6 TO-92 09 F,u BC2598 PNP Si 300 130 -20 -20 -5 100 180 2 £♦60 150 6 TO-92 09 F,Sp,u BC259C PNP Si 300 130 -20 -20 -5 100 380 2 800 150 6 TO-92 09 F,Sp,u BC260A PNP Si 300 180 -20 -20 -5 100 35 1 100 175 3 TO-18 05 ITT BC26DB PNP Si 300 180 -20 -20 -5 100 80 1 250 175 3 TO-18 05 ITT BC260C PNP Si 300 180 -20 -20 -5 100 200 1 600 175 3 TO-18 05 ITT BC261 PNP Si 360 150 -k5 -k5 -5 200 125 2 900 175 6 TO-18 05 u BC261A PNP Si 360 150 -k5 -k5 -5 200 125 2 900 175 6 TO-18 05 ITT,N,u BC2618 PNP Si 360 150 -k5 -k5 -5 200 2<*0 2 500 175 6 TO-18 05 ITT,N,u BC261C PNP Si 360 150 -k5 -k5 -5 200 <*50 2 900 175 6 TO-18 05 ITT,u BC262 PNP Si 360 150 -20 -20 -5 200 125 2 900 175 6 TO-18 05 u BC262A PNP Si 360 150 -20 -20 -5 200 125 2 260 175 6 TO-18 05 ITT,N,u BC262B PNP Si 360 150 -20 -20 -5 200 2^0 2 500 175 6 TO-18 05 ITT,N,u BC262C PNP Si 360 150 -20 -20 -5 200 <*50 2 900 175 6 TO-18 05 ITT.u BC263 PNP Si 360 150 -20 -20 -5 200 125 2 900 175 6 TO-18 05 u BC263A PNP Si 360 150 -20 -20 -5 200 125 2 260 175 6 TO-18 05 ITT,N,u BC263B PNP Si 360 150 -20 -20 -5 200 2<+0 2 500 175 6 TO-18 05 ITT,N,u BC263C PNP Si 360 150 -20 -20 -5 200 ^♦50 2 900 175 6 TO-18 05 ITT BC266 PNP Si 300 130 -6k -6*+ -5 100 125 2 500 175 6 TO-18 05 u BC266A PNP Si 300 130 -6k -6k -5 100 125 2 260 175 6 TO-18 05 ITT BC26GB PNP Si 300 130 -6k -6k -5 100 2*t0 2 500 175 6 TO-18 05 ITT BC267 NPN Si 375 150 50 k5 6 500 125 2 500 175 12 TO-18 05 u BC268 NPN Si 375 150 30 20 6 500 125 2 900 175 12 TO-18 05 u BC269 NPN Si 375 150 30 20 6 500 2i*0 2 900 175 12 TO-18 05 u BC263 PNP Si <*00 100 -30 -30 -5 600 kO 50 270 200 12 TO-18 05 u BC286 NPN Si 800 100 70 60 5 1A 20 500 180 200 20 TO-39 08 F BC287 PNP Si 800 100 -60 -60 -5 _1A 20 500 200 200 25 TO-39 08 F,u BC288 NPN Si 800 ka 80 kO 6 5A 20 2A - 200 70 TO-39 08 SGS BC29i» PNP Si 600 - -60 -60 -5 600 100 150 300 200 - TO-5 08 u BC297 PNP Si 375 100 -50 -k5 -5 1A 75 100 260 175 12 TO-16 05 SGS,u BC29B PNP Si 375 100 -30 -25 -5 1A 75 100 500 175 12 TO-18 05 SGS,u BC300 NPN Si 850 120 120 80 6 1A kO 150 2i»0 175 10 TO-39 08 SGS,TIfu BC300-** NPN Si 850 120 120 80 6 1A kO 150 80 175 10 TO-39 08 u BC3DD-5 NPN Si 850 120 120 80 6 1A 70 150 1<*0 175 10 TO-39 08 u BC300-6 NPN Si 850 120 120 80 6 1A 120 150 2**0 175 10 TO-39 08 u BC301 NPN Si 850 120 90 60 6 1A kQ 150 2**0 175 15 TO-39 08 SGS,TI,u BC302 NPN Si 850 120 60 k5 6 1A kO 150 2^0 175 10 TO-39 08 SGS,TI,u BC302-<» NPN Si 850 120 60 k5 6 1A kO 150 80 175 10 TO-39 08 u BC302-5 NPN Si 850 120 60 k5 6 1A 70 150 1<»0 175 10 TO-39 08 u BC302-6 NPN Si 850 120 60 k5 6 1A 120 150 2<+0 175 10 TO-39 08 u BC303 PNP Si 850 120 -85 -60 -7 500 kO 150 2i»0 175 10 TO-39 08 SGS,TI,u BC303-** PNP Si 850 120 -85 -60 -7 500 kO 150 80 175 10 TO-39 08 u BC303-5 PNP Si 850 120 -85 -60 -7 500 70 150 UO 175 10 TO-39 08 u BC303-6 PNP Si 850 120 -85 -60 -7 500 120 150 2it0 175 10 TO-39 08 u BC30<* PNP Si 850 120 -60 -k5 -7 500 kO 150 2**0 175 10 TO-39 08 SGS,TI,u BC30*»-<* PNP Si 850 120 -60 -k5 -7 500 kO 150 80 175 10 TO-39 08 u BC3Di»-5 PNP Si 850 120 -60 -k5 -7 500 70 150 1M3 175 10 TO-39 08 u BC304-6 PNP Si 850 120 -60 -k5 -7 500 120 150 2<t0 175 10 TO-39 08 u BC307 PNP Si 300 130 -50 -k5 -5 100 110 2 220 150 k.5 TO-92 11 AEGfF,GE,Mo BC307-92 PNP Si 300 130 -50 -k5 -5 100 75 2 500 150 k.5 TO-92 N BC3Q7A PNP Si 300 130 -50 -k5 -5 100 110 2 220 150 k.5 TO-92 AEG,F,GE,ITT, Mo,Sp,u BC3D7A-92 PNP Si 300 130 -50 -k5 -5 100 125 2 260 150 k.5 To-92 N BC3D7B PNP Si 300 130 -50 -k5 -5 100 200 2 <t50 150 k.5 TO-92 AEG,F,ITT, Mo,Spfu BC307B-92 PNP Si 300 130 -50 -k5 -5 100 2^0 2 500 150 k.5 TO-92 N BC3D7C PNP Si 300 130 -50 -k5 -5 100 <*20 2 800 150 k.5 TO-92 AEG,ITT,Mo BC3Q7P PNP Si 300 130 -50 -k5 -5 100 120 2 220 150 k.5 TO-92 06 Fe BC3D7\/I PNP Si 300 130 -50 -k5 -5 100 70 2 1<*0 150 k.5 TO-92 12 AEG,u BC308 PNP Si 300 130 -30 -25 -5 100 110 2 220 150 k.5 TO-92 11 AEG,F,GE,Mo

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