Secondary Ion Mass Spectrometry SIMS IV: Proceedings of the Fourth International Conference, Osaka, Japan, November 13–19, 1983

517 Pages·1984·12.652 MB·English

by  P. Sigmund (auth.), Professor Dr. A. Benninghoven, Professor Dr. J. Okano, Professor Dr. R. Shimizu, Dr. H. W. Werner (eds.)

36
Springer Series in Chemical Physics
Edited by Robert Gomer
~----
Springer Series in Chemical Physics
Editors: V. I. Goldanskii R. Gomer F. P. Schafer 1. P. Toennies
Atomic Spectra and Radiative Transitions 19 Secondary Ion Mass Spectrometry
By 1.1. Sobelmann SIMS III
2 Surface Crystallography by LEED Editors: A. Benninghoven, J. Giber,
Theory, Computation and Structural J. Laszlo, M. Riedel, H. W. Werner
Results. By M. A. Van Hove, S. Y. Tong 20 Chemistry and Physics of Solid
3 Advances in Laser Chemistry Surfaces IV
Editor: A. H. Zewail Editors: R. Vanselow, R. Howe
4 Picosecond Phenomena 21 Dynamics of Gas-Surface Interaction
Editors: C. V. Shank, E. P. Ippen, Editors: G. Benedek, U. Valbusa
S. L. Shapiro 22 Nonlinear Laser Chemistry
5 Laser Spectroscopy Multiple-Photon Excitation
Basic Concepts and Instrumentation By V. S. Letokhov
By W. Demtriider 2nd Printing 23 Picosecond Phenomena III
6 Laser-Induced Processes in Editors: K. B. Eisenthal, R. M. Hochstrasser,
Molecules Physics and Chemistry W. Kaiser, A. Laubereau
Editors: K.L. Kompa, S.D. Smith 24 Desorption Induced by Electronic
7 Excitation of Atoms and Broadening Transitions DIET I Editors: N. H. Tolk,
of Spectral Lines By 1.1. Sobelman, M. M. Traum, J. C. Tully, T. E. Madey
L. A. Vainshtein, E. A. Yukov 25 Ion Formation from Organic Solids
8 Spin Exchange Editor: A. Benninghoven
Principles and Applications in 26 Semiclassical Theories of Molecular
Chemistry and Biology Scattering By B. C. Eu
By Yu.N. Molin, K.M. Salikhov, 27 EXAFS and Near Edge Structures
K. I. Zamaraev Editors: A. Bianconi, L. Incoccia, S. Stipcich
9 Secondary Ions Mass Spectrometry 28 Atom in the Strong Light Field
SIMS II Editors: A. Benninghoven, ByN.B. Delone, V.P. Krainov
C. A. Evans, Jr., R. A. Powell, 29 Gas Flow in Nozzles
R. Shimizu. H. A. Storms By U. Pirumov, G. Roslyakov
lO Lasers and Chemical Change 30 Theory of Slow Atomic Collisions
By A. Ben-Shaul, Y. Haas, By E. E. Nikitin, S. Ya. Umanskii
K. L. Kompa, R. D. Levine 31 Reference Data on Atoms, Molecules,
II Liquid Crystals of One-and and Ions By A. A. Radzig, B. M. Smirnov
Two-Dimensional Order 32 Adsorption Processes on Semiconductor
Editors: W. Helfrich. G. Heppke and Dielectric Surfaces I
12 Gasdynamic Laser By S. A. Losev By V. E Kiselev, O. V. Krylov
13 Atomic Many-Body Theory 33 Surface Studies with Lasers
By I. Lindgren, J. Morrison Editors: ER. Aussenegg, A. Leitner,
M.E. Lippitsch
14 Picosecond Phenomena II
34 Inert Gases Potentials, Dynamics, and Energy
Editors: R. M. Hochstrasser,
Transfer in Doped Crystals
W. Kaiser, C. V. Shank
Editor: M. Klein
15 Vibrational Spectroscopy of
Adsorbates Editor: R. E Willis 35 Chemistry of Solid Surfaces V
Editors: R. Vanselow, R. Howe
16 Spectroscopy of Molecular Excitions
36 Secondary Ion Mass Spectrometry,
By V. L. Broude, E. I. Rashba,
SIMS IV
E.E Sheka
Editors: A. Benninghoven, J. Okano,
17 Inelastic Particle-Surface Collisions R. Shimizu, H. W. Werner
Editors: E. Taglauer, W. Heiland
18 Modelling of Chemical Reaction
Systems Editors: K. H. Ebert,
P. Deuflhard, W. Jager
Secondary Ion Mass
Spectrometry
SIMSIV
Proceedings of the
Fourth International Conference, Osaka, Japan,
November 13-19, 1983
Editors:
A. Benninghoven, 1. Okano, R Shimizu,
and H. W Werner
With 415 Figures
Springer-Verlag
Berlin Heidelberg New York Tokyo 1984
Professor Dr. A. Benninghoven Professor Dr. R Shimizu
Phsysikalisches Inst. der Universitat MUnster, Department of Applied Physics,
D4400 MUnster, Fed. Rep. of Germany Osaka University, Osaka 565, Japan
Professor Dr. 1. Okano Dr. H. W. Werner
College of General Education, Philips Research Laboratories, Eindhoven
Osaka University, Osaka 560, Japan The Netherlands
v:
International Organizing Committee: A. Benninghoven (Chairman), T. Cherepin,
C. A. Evans, Jr., K. F. J. Heinrich, J. Okano, G. Slodzian, H. W. Werner
Local Organizing Committee: 1. Okano (Chairman), T. Ichinokawa, H. Kamada, S. Maruse,
K. Masuda, S. Namba, T. Noda, K. Ogata, Y. Omori, Y. Sakaki, K. Sanbongi, R. Shimizu,
G. Shinoda, M. Someno, E. Sugata.
Sponsored by: Japan Society for the Promotion of Science, The Commemorative
Association for the Japan World Exposition, Yamada Science Foundation, Shimadzu
Science Foundation
Series Editors
Professor Vitalii 1. Goldanskii Professor Dr. Fritz Peter Schafer
Institute of Chemical Physics Max-Planck-Institut flir
Academy of Sciences Biophysikalische Chemie
Vorobyevskoye Chaussee 2-b D-3400 Gottingen-Nikolausberg
Moscow V-334, USSR Fed. Rep. of Germany
Professor Robert Gomer Professor Dr. J. Peter Toennies
The James Franck Institute Max-Planck-Institut flir Stromungsforschung
The University of Chicago BottingerstraJ3e 6-8
5640 Ellis Avenue D-3400 Gottingen
Chicago, IL 60637, USA Fed. Rep. of Germany
ISBN-13: 978-3-642-82258-2 e-ISBN-13: 978-3-642-82256-8
DOl: 10.1 007/978-3-642-82256-8
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Preface
This volume contains full proceedings of the Fourth International Conference
on Secondary Ion Mass Spectrometry (SIMS-IV), held in the Minoo-Kanko Hotel,
Osaka, Japan, from November 13th to 19th, 1983. Coordinated by a local or
ganizing committee under the auspices of the international organizing com
mittee, it followed earlier conferences held in MUnster (1977), Stanford
(1979), and Budapest (1981).
The conference was attended by about 250 participants from 18 countries,
and 130 papers including 24 invited ones were presented. Reflecting the rap
idly expanding activities in the SIMS field, informative papers were pre
sented containing up-to-date information on SIMS and various related fields.
The proceedings focussed upon six main issues: (1) Fundamentals of sput
tering and secondary ion formation. (2) Recent progress in instrumentation,
including submicron SIMS and image processing. (3) SIMS combined with other
surface analysis techniques. (4) Outstanding SIMS-related analytical methods
such as laser-microprobe SIMS, sputtered neutral mass spectrometry, mass
spectrometry of sputtered neutrals by multi-photon resonance ionization, and
accelerator-based SIMS. (5) Organic SIMS and FAB which has recently become a
rapidly expanding technique in pharmacy, biotechnology, etc. (6) Appl ica
tions of SIMS to various fields such as metallurgy, geology, and biology,
including depth profiling of semiconductors, and analysis of inorganic mate
rials. As a venue for the exchange of ideas and information concerning all
the above issues, the conference proved a great success.
The first meeting for organizing SIMS-IV was arranged by the Technical
Committee for Microbeam Analysis (Chairman, Prof. S. Maruse) of the Japan
Society for Promotion of Science (JSPS) in response to a request made by the
international organizing committee at the Budapest conference. At this meet
ing I was asked to establish a local organizing committee and act as chair
man. The local organizing committee then appointed Prof. Y. Sakaki as chair
man of the fund-raising committee and Profs. G. Shinoda, E. Sugata, and
K. Sanbongi as advisers.
The success of this conference was due in great part to the efforts of
the fund-raising commmittee and to the financial support received from the
Japan Society for Promotion of Science, the Commemorative Association for
the Japan World Exposition, the Yamada Foundation, the Shimadzu Science
Foundation, and from industry. We are also indebted to both the internation
al and the local organizing committees for the technical advice and support
they furnished. Our warm thanks go out too for the efforts made by the exec
utive committee members, particularly Dr. H. Nishimura,who devotedly handled
all the arrangements for sending out circulars, p~oducing abstracts, regis
tration, hotel accommodation, and managing the accounts of the conference.
v
The technical assistance and support given by the JSPS Technical Committee
for Microbeam Analysis from the beginning stages of organizing the confer
ence were most helpful and are gratefully acknowledged.
Finally, on behalf of the local organizing committee, I would like to ex
tend our deepest appreciation to all the participants who made this confer
ence such a successful and fruitful one.
Osaka, Japan Jun Okano
January 1984 (Chairman of organization for SIMS-IV)
VI
Contents
Part I Fundamentals
*
Fundamentals of Sputtering. By P. Sigmund ................•........... 2
Sputtered Atom Yields and Ionization Probabilities of Binary Alloys
2
Under O Bombardment. By K. Tsunoyama and T. Suzuki (With 2 Figures) 8
Sputtering and Secondary Ion Yields of Ti-Al Alloys Subjected to
Oxygen Ion Bombardment. By K. Inoue, Y. Taga, and K. Satta (With
4 Figures) ........................................................ 11
Outermost Surface Composition of Au-Cu Alloys Under Ion Bombardment of
Different Current Densities of Ar+ Ions. By H.J. Kang and R. Shimizu
(With 3 Figures) .................................................. 14
Secondary Dimer Ion Emission Probability in Sputtering Cu-Ni Alloy
By F. Honda, Y. Fukuda, and K. Nakajima (With 4 Figures) ......•..•. 17
Empirical Formula for Sputtering Yield and Z2 Dependence of Its QValues
By Y. Yamamura, S. Nakagawa, and S. Enoki (With 4 Figures) ........ 20
*
Molecular Dynamics Computer Simulation Investigation of Target Damage
Created by Ion Bombardment. By D.E. Harrison, Jr., W.A. Mason, and
R.P. Webb (With 3 Figures) ........................................ 24
Simulation of Ion Sputtering Process on the Binary Alloy
By T. Koshikawa, T. Ikuta, and R.S. Li (With 3 Figures) 31
Secondary Ion Emission from Si Subjected to Oxygen Ion Bombardment
dy T. Ohwaki, Y. Taga, and K. Satta (With 4 Fi gures) . . .. . . . .. . .... 35
Surface Structure of Oxidized Metals Bombarded by Incident Ions
By Y. Sekimoto, Y. Igarashi, and T. Kawata (With 5 Figures) ....... 38
The Effect of Energetic Electrons on the Secondary Ion Emission
By Zhu Ang-Ru and Wu Xe-Ling (With 1 Figure) ........ .............. 41
Influence of Alkali Metals on the Negative Secondary Ion Emission from
Silicon. By W. Frentrup, t1. Griepentrog, H. Klose, G. Kreysch, and
U. Mueller-Jahreis (With 3 Figures) .....................•......... 43
*
Invited paper
VII
Secondary Ion Emission Peculiarities at Metal Interfaces
By M.A. Vasilyev and S.P. Chenakin (With 2 Figures) 46
*
Intensities and Energy Spectra of Secondary Ions Sputtered from Fe-Al
Alloys by Ar+ Ion Bombardment in Ultrahigh Vacuum
By R.-L. Inglebert and J.-F. Hennequin (With 3 Figures) ........... 49
CF;: An Alternative Primary Beam Source for the Sensitive Detection of
Electropositive Elements in SIMS. By W. Reuter .................... 54
Hydrogen Ion Bombardment in Secondary Ion f1ass Spectrometry
By V.T. Cherepin, A.A. Kosyachkov, and I.N. Makeeva (With 2 Figures) 57
Electron Tunneling and the Emission of Secondary Ions from Silicon
Surfaces. By M.L. Yu (With 3 Figures) ............................. 60
Detection of Sputtered Neutrals by Multiphoton Resonance Ionization
By F.M. Kimock, J.P. Baxter, D.L. Pappas, P.H. Kobrin, and N.
Winograd (With 1 Figure) .......................................... 63
The Energy Dependence of the Ionisation Coefficient in SIMS
By R.F. Garrett, R.J. MacDonald, and D.J. O'Connor (With 4 Figures) 66
Accurate ~1easurement of Energy Distri bution Curves of Secondary Ions
by UHV-IMMA. By O. Tsukakoshi, K. Komatsu, and S. Komiya (With
4 Figures) ........................................................ 70
Energy Distribution of Positive Secondary Ions from Pure Elements and
Amorphous Alloys. By M. Riedel and H. DUsterhoft (With 2 Figures) 73
Energy Distribution of Secondary Ions Emitted from Silicate Minerals
By J. Okano and H. Nishimura (With 3 Figures) ..................... 76
A Retarding-Accelerating Energy Analyser for SIMS. By Cha Liang-Zhen,
Xue Zu-Qing, Zheng Zhao-Jia, Tong Yu-Qing, and Wu Yong-Qing (With
4 Figures) ........................................................ 79
Part II Quantification
*
Current Status of Sputtered Ion Emission Models. By P. Williams 84
LTE Quantification of SIMS of Ni-Cr Alloy
By S. Tamaki and H. Matsuda (With 3 Figures) 85
Simplified IMISR Method with Computer Data Acquisition. By J. Giber,
A. Solydom, D. Marton, and I. Barsony ............................. 89
Relative Sensitivity Factor of Compound Semiconductor by SIMS
By K. Kusao, K. Tsukamoto, Y. Yoshioka, and F. Konishi (With
3 Figures) ........................................................ 92
Quantitative Ion Probe Analysis of Oxidized Surface Using N2 Primary
Ion. By J. Murayama, N. Usuki, and N. Fujino (With 4 Figures) ..... 95
Oxygen Effect on Secondary Ion Yield in Oxygen-Doped Silicon
By Y. Homma, H. Tanaka, and Y. Ishii (With 4 Figures) ............. 98
VIII
*T he Role of Standards in Secondary Ion Mass Spectrometry
By D.E. Newbury and D. Simons (With 2 Figures) .................... 101
SIMS Quantitative Analysis of Impurities in GaAs Using Multi-Element-
Doped GaAs. By S. Kurosawa, Y. Homma, T. Tanaka, and M. Yamawaki
(With 3 Figures) .................................................. 107
SIMS Quantitative Analysis of Gallium in Silicon by Using Ion-Implanted
Samples for Standards. By H. Yamaguchi, Y. Honma, J. Kashiwakura,
and K. Koike (With 5 Figures) ..................................... 110
Part III Instrumentation
*
Ion Gun Systems for Submicron SIMS. By H. Liebl (With 3 Figures) 114
*
Submicron Ion Probes. By N. Anazawa and R. Aihara (With 3 Figures) 119
Optimization of High Brightness Cs Ion Source and Ion Optics for UHV-
IMMA. By K. Komatsu, O. Tsukakoshi, T. Katagawa, and S. Komiya
(With 4 Figures) .................................................. 124
A New Type Surface Ionization Source with an Additional Mode of
Electrohydrodynamic Ionization for SIMS. By T. Okutani, M. Fukuda,
T. Noda, H. Tamura, and H. Watanabe (With 4 Figures) .............. 127
A Study of Argon Ion Gun in SIMS. By Wang Jian-Hua, Li You-Zhe,
Chen Pi-Jin, Long Zhi-Qiao, Ho Xiao-Fang, Zhang Quan-Zhen, and
Zhang Zhen-Xiang (With 6 Figures) ................................. 130
*
Liquid Metal Ion Sources for Scanning SIMS
By F.G. Ruedenauer (With 4 Figures) ............................... 133
SIMS with Very High Spatial Resolution Using Liquid Metal Ion Sources
By A.R. Waugh, A.R. Bayly, and K. Anderson (With 5 Figures) 138
Development of High Performance Ion Microanalyzer. By E. Izumi,
Y. Kato, M. Yano, Y. Arima, and H. Tamura (With 2 Figures) 141
MIQ-156 MARK II A Highly Advanced and Versatile Quadrupole SIMS
Instrument, with Dual Primary Ion Source
By F. Simondet and P. Staib (With 5 Figures) ...................... 144
Development of Shielded Ion Microprobe Analyser for Irradiated Fast
Reactor Fuel and Material Examination. By Y. Enokido, M. Mizuno,
S. Yamanouchi, K. Kohno, and T. Itaki (With 2 Figures) ............ 147
Parameters Influencing Ion Intensities for Quadrupole SIMS Instruments
By M. Kotera and D.B. Wittry (With 4 Figures) ..................... 150
*
Isotopic Measurements at High Mass Resolution by Electrostatic Peak
Switching. By G. Slodzian, J.C. Lorin, R. Dennebouy, and A. Havette
(With 6 Figures) .................................................. 153
*
Laser Microprobe Mass Spectrometry. By D.S. Simons (With 2 Figures) 158
Metastable Molecular Ion Emission from Semiconductor Surfaces Under
N2 Laser Irradiation. By A. Kasuya and Y. Nishina (l~ith 3 Figures) 164
IX
Laser-Induced Sputtering from CdS and GaAs. By H. Fukano, A. Namiki,
Y. Yasuda, T. Nakamura, and T. Noda (l~ith 3 Figures) .............. 167
*
SIMS at Higher Energies. By A.E. Litherland, J.C. Rucklidge, G.C.
Wilson, W.E. Kieser, L.R. Kilius, and R.P. Beukens (With 2 Figures) 170
The Radiocarbon Measurement with the Tandem Accelerator at Nagoya
University. By T. Nakamura, H. Yamashita, N. Nakai, T. Sakase,
S. Sato, and A. Sakai (With 2 Figures) ............................ 175
*
Image Processing SIMS. By G.H. Morrison and M.G. Moran (Hith 2 Figures) 178
Evaluation of Metal Interaction by Color Display SIMS Techni~ue
By Y. r~ashiko, K. Tsutsumi, H. Koyama, and S. Kawazu (With3Figures) 183
A Comparison of Camera-Based and Quantized Detectors for Image
Processing on an Ion Microscope. By R.W. adom, D.H. Hayne, and C.A.
Evans, Jr. (With 4 Figures) ....................................... 186
Automation of an Ion Microprobe Mass Analyzer
By T. Suzuki and K. Tsunoyama (With 3 Figures) 189
Part I V Combined and Static SIMS
*
Ultra-High Vacuum SIMS: A Pilgrim's Journey Through History
By S. Komiya ...................................................... 194
*
Single Crystal Surface Structure Studies with Static SIMS
By E. Bauer and S. Prigge (With 2 Figures) ........................ 201
Ion Dose Effect in Thin Film Formation on Nb(lOO)
By T. Koshikawa, S. Prigge, and E. Bauer (With 4 Figures) 206
A Low-Energy SIMS Investigation on Thermal Diffusion on Vapor-Deposited
Nickel on Copper Substrate
By H. Yamamoto, T. Kikuchi. and K. Furuya (With 2 Figures) ........ 210
*
SIMS Combined with Other Methods of Surface Analysis. By O. Ganschow
(With 3 Figures) •••••....•....•....•.•.....•.......••...•...•..... 213
Combined SIMS and Electron Spectroscopy Investigation of the Chemical
State of Some Ion-Implanted Transition Metals and Steels
By W.M. Bone, T.M. Barlak, I.L. Singer, R.A. Jeffries, and R.J.
Colton (With 3 Figures) ........................................... 221
SIMS-Auger Analysis of Organic Films on Gallium Arsenlde
By M. Hatada and K. Matsuda (With 3 Figures) ...................... 225
SIMS and AES Studies of Ni-Zn Alloys. By Y. Fukuda (With 5 Figures) 228
The Application of SIMS and Other Surface Techniques to the Study of
Antimony-Doped Tin Oxide Surfaces. By G.B. Hoflund, P.H. Holloway,
and W.H. Hocking (With 3 Figures) ................................. 231
Silver Catalyst for Partial Oxidation of Methanol. Reaction Path and
Catalyst Poisoning by Iron. A Combined SIMS, TOMS, AES, XPS and
ISS Study. By R. Jede, E. Manske, L.D. An, O. Ganschow, U. Kaiser,
L. Wiedmann, and A. Benninghoven (With 6 Figures) ................. 234
x