Secondary Ion Mass Spectrometry SIMS III: Proceedings of the Third International Conference, Technical University, Budapest, Hungary, August 30–September 5, 1981 PDF
Preview Secondary Ion Mass Spectrometry SIMS III: Proceedings of the Third International Conference, Technical University, Budapest, Hungary, August 30–September 5, 1981
19 Springer Series in Chemical Physics Edited by Robert Gomer ~----------------------------~ Springer Series in Chemical Physics Editors: V. I. Goldanskii R. Gomer F. P. Schafer 1. P. Toennies Volume I Atomic Spectra and Radiative Transitions By I. I. Sobelman Volume 2 Surface Crystallography by LEED Theory, Computation and Structural Results By M. A. Van Hove, S. Y. Tong Volume 3 Advances in Laser Chemistry Editor: A. H. Zewail Volume 4 Picosecond Phenomena Editors: C. V. Shank, E. P. Ippen, S. 1. Shapiro Volume 5 Laser Spectroscopy Basic Concepts and Instrumentation By W. Demtrtider Volume 6 Laser-Induced Processes in Molecules Physics and Chemistry Editors: K 1. Kompa, S. D. Smith Volume 7 Excitation of Atoms and Broadening of Spectral Lines By I. I. Sobelman, 1. A. Vainshtein, E. A. Yukov Volume 8 Spin Exchange Principles and Applications in Chemistry and Biology By Yu. N. Molin, K M. Salikhov, K I. Zamaraev Volume 9 Secondary Ion Mass Spectrometry SIMS n Editors: A. Benninghoven, C. A. Evans, Jr., R. A. Powell, R. Shimizu, H. A. Storms Volume 10 Lasers and Chemical Change By A. Ben-Shaul, Y. Haas, K 1. Kompa, R. D. Levine Volume 11 Liquid Crystals of One-and Two-Dimensional Order Editors: W. Helfrich, G. Heppke Volume 12 Gasdynamic Laser By S. A. Losev Volume 13 Atomic Many-Body Theory By I. Lindgren, J. Morrison Volume 14 Picosecond Phenomena II Editors: R Hochstrasser, W. Kaiser, C. V. Shank Volume 15 Vibrational Spectroscopy of Adsorbates Editor: R F. Willis Volume 16 Spectroscopy of Molecular Excitons By V.1. Broude, E.I. Rashba, E. F. Sheka Volume 17 Inelastic Particle-Surface Collisions Editors: E. Taglauer, W. Heiland Volume 18 Modelling of Chemical Reaction Systems Editors: K H. Ebert, P. Deuflhard, W. Jiiger Volume 19 Secondary Ion Mass Spectrometry SIMS m Editors: A. Benninghoven, J. Giber, J. Laszlo, M. Riedel, H. W. Werner Volume 20 Chemistry and Physics of Solid Surfaces IV Editors: R. Vanselow, R Howe Secondary Ion Mass Spectrometry SIMS III Proceedings of the Third International Conference, Technical University, Budapest, Hungary, August 30-September 5, 1981 Editors: A. Benninghoven 1. Giber 1. Laszl6 M. Riedel H.W. Werner With 289 Figures Springer-Verlag Berlin Heidelberg New York 1982 Professor Dr. A. Benninghoven Dr. M. Riedel Physikalisches Institut der Unjllf'I~itiit Munster Department of Physical Chemistry and D-4400 Munster, Fed. Rep. of Germany Radiology, EOtvos University H -llIl Budapest, Hungary Professor Dr. 1. Giber, 1. Laszlo Dr. H.W. Werner Physical Institute of the Technical University Philihs Research Laboratories, Eindhoven H-llIl Budapest, Hungary The Netherlands International Organizing Committee:A. Benninghoven (Chairman), V.T. Cherepin, c.A. Evans, Jr., KF.J. Heinrich, 1. Okano, G. Slodzian, H. W. Werner Local Organizing Committee: 1. Giber, 1. Laszlo, M. Riedel, A. Solyom, V. Mesterhazy Physical Institute of the Technical University Budapest, Budafoki ut 8, H-Illl Budapest, Hungary Sponsored by: Hungarian Academy of Sciences, Ministry of Culture and Education of Hungary, Technical University of Budapest, European Physical Society, Lorand Eotvos Physical Society Series Editors Professor Vitalii I. Goldanskii Professor Dr. Fritz Peter Schafer Institute of Chemical Physics Max-Planck-Institut fUr Academy of Sciences Biophysikalische Chemie Vorobyevskoye Chaussee 2-b D-3400 Gottingen-Nikolausberg Moscow V-334, USSR Fed. Rep. of Germany Professor Robert Gomer Professor Dr. J. Peter Toennies The James Franck Institute Max-Planck-Institut fUr Stromungsforschung The University of Chicago BottingerstraBe 6-8 5640 Ellis Avenue D-3400 Gottingen Chicago, IL 60637, USA Fed. Rep. of Germany ISBN 978-3-642-88154-1 ISBN 978-3-642-88152-7 (eBook) DOI 10.1007/978-3-642-88152-7 This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically those of translation , reprinting, reuse of illustrations, broadcasting, reproduction by photocopying machine or similar means, and storage in data banks. Under § 54 of the German Copyright Law where copies are made for other than private use, a fee is payable to "Verwertungsgesellschaft Wort", Munich. © by Springer-Verlag Berlin Heidelberg 1982 Softcover reprint of the hardcover 1st edition 1982 The use of registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. 2153/3130-543210 Preface Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981. The Conference was attended by about 250 participants. The success of the 1981 Conference in Budapest was especially due to the excellent preparation and organization by the Local Organizing Committee. We would also like to acknowledge the generous hospitality and cooperation of the Hungarian Academy of Sciences. Japan was chosen to be the location for the next conference in 1983. SIMS conferences are devoted to two main issues: improving the application of SIMS in different and especially new fields, and understanding the ion formation process. Needless to say, there is a very strong interaction be tween these two issues. The major reason for the rapid increase in SIMS activities in the last few years is the fact that SIMS is a powerful tool for bulk, thin-film, and surface analysis. Today it is extensively and successfully applied in such different fields as depth profiling and imaging of semiconductor devices, in isotope analysis of minerals, in imaging biological tissues, in the study of catalysts and catalytic reactions, in oxide-layer analysis on metals in drug detection, and in the analysis of body fluids. Yet in spite of these successful applications of SIMS, the ion formation process remains the central question. Up to now we still know very little about the fundamental processes which result in the emission of a charged atomic or molecular particle from an ion-bombarded surface. Thus the present situation may be summarized by the assessmant that we have succeeded in de veloping an excellent and powerful analytical technique, but based upon pro cesses that are not sufficiently understood. This volume contains almost all of the invited and contributed papers presented at the Conference. The contributions are arranged following the sections of the Conference program. All papers included in this volume were reviewed at the Conference. The final responsibility for the manuscripts, however, is with the authors only. For technical editorial work we thank Dr.!. Barsony, t4r. Z. Soha and Z. Pakh. ~1rs. The editiors hope that this volume will help those who could not partici pate in the meeting become familiar with the recent developments and activi ties in the field of secondary ion mass spectrometry. Budapest, Hungary A. Benninghoven December, 1981 J. Giber . J. Lasz Zb M. RiedeZ· H. W. Werner v Contents Part I. Instrumentation *Instrumental Aspects of Spatially 3-Dimensional SIMS Analysis By F.G. RUdenauer ................................................. 2 *Some Problems of Construction Implied by Requirements of Up-To-Date SIMS Instrumentation. By R.L. Gerlach ..... ........................ 22 Description and Applications of a New Design Cs+ Ion Source on the COALA Ion Microprobe for Negative Ion SIMS By B.L. Bentz and H. Liebl ........................................ 30 Operational Data of a Simple Microfocus Gun Using an EHD-Type Indium Ion Source. By M.J. Higatsberger, P. Pollinger, H. Studnicka, and F. G. RUdenauer .........................................•...... 38 First Results on a Scanning Ion Microprobe Equipped with an EHD-Type Indium Primary Ion Source. By F.G. RUdenauer, P. Pollinger, H. Studnicka, H. Gnaser, W. Steiger, and M.J. Higatsberger ........ 43 Simple Double-Channel SIMS Instrument By V.T. Cherepin, I.N. Dubinsky, and Ya.Ya. Dyad'kin 49 Principles and Applications of a Dual Primary Ion Source and Mass Filter for an Ion Microanalyser. By J.J. Le Goux and H.N. Migeon 52 A Quadrupole Mass Spectrometer with Energy Filtering for SIMS Studies By R.-L. Inglebert and J.-F. Hennequin ............................ 57 Development and Operation of Special SIMS-Equipment for Use in Iron and Steel Analysis. By J. Dittmann ................................ 61 *Design Concept of a New Secondary Ion Optics System for Use with Quadrupole Mass Spectrometers By R. Jede, O. Ganschow, and A. Benninghoven ...................... 66 Improved Analysis of Insulators in an ARL IMMA Using Positive Primary Ions and an Electron Gun. By J.D. Brown and D.J. Gras ............. 72 Performance and Use of Dissector Ion Microanalyzer By V.T. Cherepin and V.L. 01 'khovsky .............................. 77 *Invited paper VII Distortion of Secondary Ion Extraction Due to Sample Surface Irregularities. By W. Bedrich, B. Koch, H. Mai, U. Seidenkranz, H. Syhre, and R. Voigtmann ........................................ 81 A Combined Direct Imaging Laser Ionization Secondary Ionization Mass Spectrometer. By B.K. Furman and C.A. Evans, Jr. ............. 88 Advances in Ion Probes A-DIDA. By H. Frenzel and J.L. Maul 94 A Novel Ion Etching Unit Applicable for Depth Profiling with SIMS and IIR. By K.H. Guenther, E. Hauser, G. Hobi, P.G. Wierer, and E. Brandstaetter .................................................. 97 Improvements and Applications of the Riber MIQ 156 By F. Simondet and D. Kubicki ..................................... 102 Part II. Fundamentals I. Ion Formation *Molecule Formation in Oxide Sputtering. By H. Oechsner 106 *Dependence of Ionization Yields Upon Elemental Composition; Isotopic Variations. By G. Slodzian ........................................ 115 Measurements of the Energy Distributions of Positive Secondary Ions in the Energy Range from 0 to About 500 eV By C. Pahlke, H. DUsterheft, and U. MUller-Jahreis ................ 124 Ion Dose Effects in Static SIMS By W. Speckmann, S. Prigge, and E. Bauer .......................... 128 Current Density Effects on Secondary Ion Emission from Multicomponent Targets. By A. Barcz, M. Domanski, and B. Wojtowicz-Natanson 134 Isotope Effect in Secondary Ion Emission By J.C. Lorin, A. Havette, and G. Slodzian 140 Caesiated Surfaces and Negative Ion Emission By M. Bernheim and G. Slodzian .................................... 151 Secondary Ion Mass Spectrometry of Organic Compounds; A Comparison with Other Methods (EI, CI, Fl, FD, FAB). By K.D. Kleppel ......... 159 Secondary Ion Emission from NbV-Alloys By J. Schou, G. Flentje, W.O. Hofer, and U. Linke 165 Part I fl. Fundamentals II. Depth Profiling *Depth Profiling by SIMS: Depth Resolution, Dynamic Range and Sensitivity. By C.W. Magee, R.E. Honig, and C.A. Evans, Jr. 172 *Disturbing Effects in Sputter Profiling. By S. Hofmann 186 *The Theory of Concentration Depth Profiling by Sputter Etching By W.O. Hofer and U. Littmark ..................................... 201 VIII Surface Topography Development During SIMS Investigations and Using it to Get Additional Information on Polycrystalline and Heterogeneous Solids. By W. Hauffe ............................•... 206 Sputtering of Metals with 20 keV O~; Characteristic Etch Patterns, Sputtered Atom Yields and Secondary Ion Mass Spectra By K. Tsunoyama, T. Suzuki, Y. Ohashi, and M. Konishi ............. 211 Depth Resolution of Ion Bombardment Technique Applied to NiPd, PiPt, PtPd Thin Layer Systems. By J. Giber, D. Marton, J. Laszlo, and 1. r·1izsei 216 The Influence of Ion Bombardment on the Results of AES-Depth Profiling on Sil icides. By Th. Wirth ........................................ 222 A Study of Secondary Ion Energy Distributions During Sputtering of MIS Layer Structures. By G.Ph. Romanova, P.I. Didenko, A.A. Yefremov, V.G. Litovchenko, and R.1. Marchenko .........•..... 227 Structural Effects in SIMS at the Depth Profiling of Boron Implanted Silicon. By V.T. Cherepin, A.K. Kosyachkov, A.D. Krasyuk, and M.A. Vasil iev •.................................................... 233 Comparison of Compositional Thin Film Depth Profiling Obtained by SIMS, IIR and AES. By E. Hauser, G. Hobi, K.H. Guenther, and E. Brandstaetter •................................................ , 238 Part IV. Quantification *Quantification of SIMS. By G.H. Morrison ............................. 244 Quantitative Chemical Analysis of Standard Iron Alloys by SIMS Technique. By Z. Jurela ........................................... 257 Application of the LTE Model to Quantifying the Secondary Ion Spectra of Steels. By J. Suba and A. Stopka ............................... 264 Modification of the MISR Method with the Use of Implantation of Standard Elements. By J. Giber, A. S6lyom, L. Bori, and J. Gyulai 269 Use of Ionic Implantation f,or Quantification of SIMS Analysis in Metals and Oxides - Application to Corrosion Studies By J.C. Pivin, D. Loison, C. Roques-Carmes, J. Chaumont, A.M. Huber, and G. Morillot ....................................... 274 Secondary Ion Emission from Binary and Ternary Amorphous Alloys By H. Gnaser, M. Riedel, J. Marton, and F.G. RUdenauer ............ 282 Experimental Procedures for Quantitative Analysis of Silicate Minerals. By A. Havette and G. Slodzian ....................•..•... 288 SIMS Isotopic Measurements at High Mass Resolution By E. Zinner and M. Grasserbauer .................................. 292 Computer Peak Identification and Evaluation of SIMS Spectra By J. Antal, S. Kugler, and M. Riedel ............................. 297 IX Part V. Application I. Depth Profiling Depth Profiling of Copper Atoms Gettered in Ion-Damaged GaP By M. Griepentrog, H. Kerkow, H. Klose, and U. MUller-Jahreis 302 The Optimisation of SIMS for the Analysis of Semiconductor Materials By J.B. Clegg ..................................................... 308 Impurity Redistrfbution in GaAs Epilayers. By A.M. Huber, G. Morillot, P. Merenda, M. Bonnet, and G. Bessonneau .......................... 314 Quantitative Distribution Analysis of B, As and P in Si for Process Simulation. By M. Grasserbauer, G. Stingeder, E. Guerrero, H. Potzl, R. Tielert, and H. Ryssel ............................... 321 High Spatial Resolution SIMS Depth Profiling of Cr Dopant in CdSe Thin Film Transistors By J.D. Brown, F.R. Shepherd, and W.D. Westwood •............•..... 330 SIMS Investigation of p-n Junction Quality in Ion Implanted cw Laser Annealed Silicon By M. Maier, D. Bimberg, H. Baumgart, and F. Phillipp ............. 336 Profiles·of Implanted or Diffused Dopants (Be, Zn, Cr, Se) in Indium Phosphide. By M. Gauneau, A. Rupert, and P.N. Favennec ••.......... 342 Applications of SIMS in Studies of Slow Diffusion and Isotope Diffusion. By A. Lodding, H. Odelius, and U. Sodervall ............ 351 Rapid Diffusion and Gettering Studies of Bulk Oxygen in Silicon by Cs/SIMS. By C.A. Evans, Jr., B.K. Furman, and T.J. Magee .•.......• 357 Water Diffusion in Fused Silica and Iron-Making Slag By M. Kobayashi, K.S. Goto, and M. Someno ............••........... 361 Combined SIMS-AES-XPS Investigation of the Composition and Interface Structure of Anodic Oxide Layers on CdO.2H90.8Te (CMT). By U. Kaiser, O. Ganschow, J. Neelsen, H.M. Nitz, L. Wiedmann, and A. Benninghoven 365 Part V I. Application II. Surface Studies, Ion Microscopy The Chemical Composition of Oxide Films on Aluminium and Its Influence on Surface Properties Studied by SIMS, XPS and AES. By M. Textor 372 Study of the Adsorption of Water on Titania by Secondary Ion Mass Spectrometry. By J. Marien and E. De Pauw ......................... 377 SIMS Studies on Oxyg~n Adsorption on Aluminium and Its Alloys By D. Marton and A. Csanady •...........•....•......•.....••......• 383 Oxidation and Segregation at the Surfaces of Different Aluminium Foils and Sheets. By A. Csanady, D. Marton, and T. Turmezey ....... 388 Oxygen Adsorption on Polycrystalline Pt3Pb at Elevated Temperatures. A SIMS Study. By W. Unger, L. Bori, and D. Marton ••....•.......... 394 x SIMS Investigations on TiFe Nitrided by NH3-Pretreatment By G. Kirch and H. ZUchner ........................................ 398 *SIMS/TDMS Studies of Hydrocarbon Interaction with Nickel By M. Schemmer, P. Beckmann, D. Greifendorf, and A. Benninghoven 405 SIMS Investigation of Adsorption and Chemical Modification of C2H4 and C2H2 on a Polycrystalline Ni-Surface. By H. Kaarmann, B. Leidenberger, H. Hoinkes, and H. Wilsch ......................................... 411 *Secondary Ion Emission from UHV-Deposited Amino Acid Overlayers on Clean Metal Surfaces. By W. Lange, M. Jirikowsky, D. Holtkamp, and A. Benn i nghoven . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 416 *SIMS Investigation of Adsorption of 02, H20, CO, C02, CH20, and CH30H and Coadsorption of 02 with CH20 and CH30H on Polycrystalline Silver Surfaces. By L. Wiedmann, N.L. Wang, R. Jede, L.D. An, 0. Ganschow, and A. Benninghoven .................................. 421 Distribution of Ni, Co, Ga, and Cu in Iron Meteorities By J. Okano and H. Nishimura ...................................... 426 Metallurgical Applications of Ionic Microscopy. By E. Darque-Ceretti, R. Dennebouy, J.C. Pivin, and C. Roques-Carmes .................... 431 *Secondary Ion Mass Spectrometry of Organic Compounds By A. Benn i nghoven ............................... . . . . . . . . . . . . . . . . . 438 Index of Contributors ................................................ 443 XI
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