Secondary Ion Mass Spectrometry SIMS II: Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979

310 Pages·1979·19.73 MB·English

by  Nicholas Winograd (auth.), Prof. A. Benninghoven, Dr. C. A. Evans Jr., Dr. R. A. Powell, Prof. R. Shimizu, Dr. H. A. Storms (eds.)

Springer Series in Chemical Physics
91_ Edited by Fritz Pete_r Schafer __
Springer Series in Chemical Physics
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Secondary Ion
Mass Spectrometry
SIMS II
Proceedings of the Second International Conference on
Secondary Ion Mass Spectrometry (SIMS II)
Stanford University, Stanford, California, USA
August 27 31, 1979
Editors
A. Benninghoven . C. A. Evans, Jr. . R. A. Powell
R. Shimizu . H. A. Storms
With 234 Figures
Springer-Verlag Berlin Heidelberg New York 1979
Editors
Prof. A. Benninghoven, Physikalisches Institut der Universitat Munster, F.R.G.
Dr. C. A. Evans, Jr., Charles Evans & Associates, San Mateo, CA 94402, USA
Dr. R. A. Powell, Varian Associates, Palo Alto, CA 94303, USA
Prof. R. Shimizu, Osaka University, Osaka, Japan
Dr. H. A. Storms, General Electric Vallecitos Nuclear Center,
Pleasanton, CA 94566, USA
International Organizing Committee
A. Benninghoven (Chairman), V. T. Cherepin, C. A. Evans, Jr., K. F. Y. Heinrich,
J. Okano, G. Slodzian, H. W. Werner
Local Organizing Committee
R. A. Powell (Chairman), C. A. Evans, Jr., H. A. Storms, J. Stein
Supported by Grants from
Office of Naval Research Charles Evans & Associates Instruments, SA
(Grant NOOO 14-79-G-0063)
General Electric Perkin-Elmer
Microbeam Analysis Society
Hitachi Riber
Atomika
Inficon Leybold-Heraeus ULVAC
Balzers
Varian
ISBN-13: 978-3-642-61873-4 e-ISBN-13: 978-3-642-61871-0
001: 10.1007/978-3-642-61871-0
Library of Congress Cataloging in Publication Data
International Conference on Secondary Ion Mass Spectrometry, 2d, Stanford University, 1979. Second-
ary ion mass spectrometry, SIMS-II.
(Springer series in chemical physics; v. 9)
Includes index.
I. Mass spectrometry-Congresses.
I. Benninghoven, A. II. Title. III. Series.
QD96.M3157 1979 543'.08 79-23997
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© by Springer-Verlag New York 1979
Softcover reprint of the hardcover 1st edition 1979
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therefore free for general use.
2153-543210
I>reface
The Second International Conference on Secondary Ion Mass Spectrometry
(SIMS-II) was held at Stanford University. Stanford, California, from
August 27-31. 1979. Over 80 invited and contributed papers, collected in the
present volume, were presented to about 200 participants. It is the hope of
the editors that these proceedings will meet the needs of the participants
as well as those not able to attend, in order to make the best use of the
information presented during the conference.
SIMS-II was the second conference of its type--the first having been
held in Muenster, West Germany, .in September 1977 with about the same number
of papers and participants. This series of biannual conferences on secondary
ion mass spectrometry has been created as a forum to bring together people
who are working in the different fields of secondary ion emission. These
conferences should encourage the exchange of results, ideas, and projects,
with the final goal being a better understanding of the secondary ion
emission process and its application--especially in the field of analysis.
In this regard. SIMS-II was a very successful conference: papers dis-
cussed fundamental aspects of SIMS as well as a wide range of analytical
applications, supplying the participants with an excellent, up-to-date
survey of the field. New ideas, recent results, experiments in progress,
etc., were discussed following the presentations and also, on a more informal
basis, in small .groups. Such informal exchanges are of great value in this
type of highly specialized conference.
The conference revealed very clearly that SIMS is still a very rapidly
expanding field in both fundamental research as well as for its application.
Today we are still far away from a complete understanding of the very complex
processes which result in the emission of a charged atomic or molecular
cluster. These processes include the sputtering process as well as the
different electronic interactions which are responsible for the composition
and final charge state of the emitted particles. There exist several
VI
approaches to a theoretical treatment of these processes. The challenging
task for future theoretical work will be to go more and more in the direction
of a combined consideration of these two groups of processes, thus approach-
ing a real and complete understanding of the entire process of secondary ion
formation.
Understanding ion formation is also of great importance for the optimum
application of secondary ion emission, especially in its most important field
of analysis. This analytical application, particularly for quantitative
analysis, has made great progress during the last few years. On the other
hand, new fields of application such as analysis of organic compounds,
localized isotopic analysis, the use of negative secondary ions--especially
from Cs covered surfaces--etc., are still in the formative stages.
Much of the success of SIMS-II resulted from the hospitality of
Stanford University, its excellent facilities and attractive surroundings.
Particular thanks are due the staff of the Stanford University conference
scheduling office. We also want to acknowledge Mrs. Elfie Liebl and
Mrs. Elaine Storms and family for their efforts during the conference; the
session chairpersons for reviewing the submitted papers; and Ms .. S. Sargentini
for typing the final manuscript. The financial support of our sponsors is
gratefully acknowledged. Finally, we want to thank all those who participated
in SIMS-II, especially those who attended from outside the United States,
for making the conference as productive and informative as it was.
Palo Alto, California A. Bennlnghoven
September 1979 C. A. Evan&, 14.
R. A. Powell
R. Shimizu
H. A. S~o~
Contents
I. Fundamentals
Chairpersons: D.E. Harrison and C.A. Evans, Jr.
Invited: The Dynamics of Ion-Solid Interactions: A Basis for Under-
standing SIMS
By N. Winograd (With 2 Figures) .......................... 2
Invited: Simultaneous Measurements of Photon and Secondary Ion
Emissions from Ion-Bombarded Metal Surfaces
By T. Okutani and R. Shimizu (With 2 Figures) ............ 7
Atom Ejection Mechanisms and Models
By D.E. Harrison, Jr., B.J. Garrison, and N. Winograd (With 1
Figure) ......•........•............................................ 12
New Models of Sputtering and Ion Knock-On Mixing
By S.A. Schwarz and C.R. Helms (With 3 Fi gures) .................... 15
Clustering Distances in Secondary Ion Mass Spectrometry
By F. Honda, Y. Fukuda, and J.W. Rabalais (With 2 Figures) .•....... 18
Basic Aspects in the Sputtering of Atoms, Ions, and Excited States
By R. Kelly ....................................•..............•.... 21
Cluster Formation in SIMS: CO on PdAg
By G.J. Sl usser (Wi th 1 Fi gure) ...............•...........•........ 26
Effect of Partial Oxygen Pressure on Metal Single Crystals
Bombarded by Noble Gas Ions
By M. Bernheim and G. Slodzian (With 5 Figures) .................... 29
A Comparison of Absolute Yields of Excited Neutrals and Positive
Ions from Ion-Bombarded Surfaces
By P. Williams, I.S.T. Tsong, and S. Tsuji ......................... 33
Correlation Between the Spectral Ionization Probability of
Sputtered Atoms and the Electron Density of States
By T.R. Lundquist (With 3 Figures) ........•........................ 34
Physical Aspects of the Valence Model's Parameters
By C. Plog and W. Gerhard (With 4 Figures) ......................... 37
VIII
Negative Ion Emission from Surfaces Covered with Cesium and
-Bombarded by Noble Gas Ions
By M. Bernheim, J. Rebiere, and G. Slodzian (With 4 Figures) ....... 40
Angle-Resolved SIMS--A New Technique for the Determination of
Surface Structure
By B.J. Garrison, S.P. Holland, and N. Winograd (With 2 Figures) .. 44
II. Quantitation
Chairpersons: D.B. Wittry and P. Williams
Invited: Factors Influencing Secondary Ion Yields
By V.R. Deline (With 3 Figures) .......................... 48
Invited: Instrumental Effects on Quantitative Analysis by
Secondary Ion Mass Spectrometry
By D. E. Newbury .......................................... 53
A Quantitative Model for the Effects on Secondary Ion Emission of
Gaseous Absorption at Solid Surfaces Under Noble Gas Ion Bombardment
By J.N. Coles, Presented by G.L. Merrill (With 1 Figure) ........... 58
The Application of Ion Implantation to Quantitative SIMS Analysis
By D.P. Leta and G.H. Morrison ..................................... 61
Energy Filtering and Quantitative SIMS Analysis of Silicates for
Major and Trace Elements
By N. Shimizu ...................................................... 62
Quantitative Analysis of Doped GaAs by Quadrupole SIMS
By W. Gerigk and M. Maier (With 1 Figure) ........................... 64
Trace Element Analysis of Silicates by Ion Microprobe
By C. Meyer, Jr. (With 1 Figure) .................................... 67
Imaging of Element Distributions by Ion Microprobe
By J.H. Schilling (With 3 Figures) .................................. 70
Secondary Ion Emission from Titanium Alloys Under Argon and Oxygen
Bombardment
By J.M. Schroeer, A. Dely, and L.L. Deal (With 1 Figure) ............ 73
Effect of Alloying in Secondary Ion Emission from AgPd and CrNi Systems
By M.L. Yu and W. Reuter (With 3 Figures) •........................•. 76
III. Semiconductors
Chairpersons: C.W. fvlagee and H. Herner
Invited: Quantitation of SIMS for Semiconductor Processing Technology
By T.W. Sigmon (Hith 3 Figures) ........................... 80
IX
Problems Encountered in Depth Profiling of Nitrogen and Oxygen in
Silicon by Means of Secondary Ion Mass Spectrometry
By W. Wach and K. Wi ttmaack (With 3 Fi gures) ........................ 85
Depth Profiling of Phosphorus in Silicon Using Cesium Bombardment
Negative SIMS
By C.W. Magee (With 4 Figures) ...................................... 88
Chromium and Iron Determination in GaAs Epitaxial Layers
By A.M. Huber, G. Morillot, P. Merenda, and N.T. Linh (With 5
Fi gures) ............................................................ 91
Thermal Redistribution of Cr in GaAs Due to Damage, Stress and
Concentration Gradients
By C.A. Evans, Jr., V.R. Deline, and T.W. Sigmon .................... 95
On-Line Sputter Rate Measurements During SIMS, AES Depth Profiling
By J. Kempf (With 4 Figures) ........................................ 97
Laser Induced Redistribution of Ion Implanted and Surface Deposited
B in Silicon: A SIMS Study
By W.H. Christie, R.J. Warmack, C.W. White, and J. Narayan
(Wi th 3 Fi gures) .................................................... 100
SIMS Identification of Impurity Segregation to Grain Boundaries in
Cast Multigrained Silicon
By L.L. Kazmerski, P.J. Ireland, and T.F. Ciszek (With 3 Figures) ... 103
SIMS Studies in Compound Semiconductors
By J.E. Baker, P. Williams, D.J. Wolford, J.D. Oberstar, and
B.G. Streetman ...................................................... 106
Characterization for Composition and Uniformity of MCVD Glass Film
by Secondary Ion Mass Spectrometry (SIMS)
By D.L. Malm and G.W. Tasker (With 2 Figures) ....................... 107
SIMS Study of Metallized Silicon Semiconductors
By K.L. Wang and H.A. Storms (With 2 Figures) ....................... 110
IV. static SIMS
Chairperson: A. Benninghoven
Invited: Molecular Secondary Ion Emission
By A. Benni nghoven (With 6 Fi gures) ....................... 116
Invited: Analytical Applications of SIMS
By D.M. Hercul es ..............•..........•................ 122
Static SIMS Investigations of Amino Acid Mixtures
By S. Tamaki, A. Benninghoven and W. Sichtermann (With 3 Figures) ..• 127
Static SIMS of Amino Acid Overlayers
By R.J. Colton, J.D. Ganjei, J.S. Murday and J.J. DeCorpo .•......... 130