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Secondary Ion Mass Spectrometry SIMS II: Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979 PDF

310 Pages·1979·19.73 MB·English
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Preview Secondary Ion Mass Spectrometry SIMS II: Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979

Springer Series in Chemical Physics 91_ Edited by Fritz Pete_r Schafer __ Springer Series in Chemical Physics Editors: V. I. Goldanskii R. Gomer F. P. Schafer 1. P. Toennies Volume 1 Atomic Spectra and Radiative Transitions By I. I. Sobelman Volume 2 Surface Crystallography by LEED, Theory, Computation, and Structural Results By M. A. Van Hove, S. Y. Tong Volume 3 Advances in Laser Chemistry Editor: A. H. Zewail Volume 4 Picosecond Phenomena Editors: C. V. Shank, E. P. Ippen, S. L. Shapiro Volume 5 Laser Spectroscopy, Fundamentals and Techniques By W. Demtroder Volume 6 Laser-Induced Processes in Molecules Editors: K. L. Kompa, S. D. Smith Volume 7 Excitation of Atoms and Broadening of Spectral Lines By I. I. Sobelman, L. A. Vainshtein, E. A. Yukov Volume 8 Spin Exchange, Principles and Applications in Chemistry and Biology By Yu. N. Molin, K. M. Salikhov, K. I. Zamaraev Editorial Board Professor Vitalii I. Goldanskii Professor Dr. Fritz Peter Schafer Institute of Chemical Physics Max-Planck-Institut fiir Academy of Sciences BiophysikaJische Chemie Vorobyevskoye Chaussee 2-b D-3400 Gottingen-Nikolausberg MoscowV-334, USSR Fed. Rep. of Germany Professor Robert Gomer Professor Dr. 1. Peter Toennies The James Franck Institute Max-Planck-Institut fiir Stromungsforschung The University of Chicago Bottingerstrasse 6 - 8 5640 Ellis A venue D-3400 Gottingen Chicago, IL60637, USA Fed. Rep. of Germany Secondary Ion Mass Spectrometry SIMS II Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27 31, 1979 Editors A. Benninghoven . C. A. Evans, Jr. . R. A. Powell R. Shimizu . H. A. Storms With 234 Figures Springer-Verlag Berlin Heidelberg New York 1979 Editors Prof. A. Benninghoven, Physikalisches Institut der Universitat Munster, F.R.G. Dr. C. A. Evans, Jr., Charles Evans & Associates, San Mateo, CA 94402, USA Dr. R. A. Powell, Varian Associates, Palo Alto, CA 94303, USA Prof. R. Shimizu, Osaka University, Osaka, Japan Dr. H. A. Storms, General Electric Vallecitos Nuclear Center, Pleasanton, CA 94566, USA International Organizing Committee A. Benninghoven (Chairman), V. T. Cherepin, C. A. Evans, Jr., K. F. Y. Heinrich, J. Okano, G. Slodzian, H. W. Werner Local Organizing Committee R. A. Powell (Chairman), C. A. Evans, Jr., H. A. Storms, J. Stein Supported by Grants from Office of Naval Research Charles Evans & Associates Instruments, SA (Grant NOOO 14-79-G-0063) General Electric Perkin-Elmer Microbeam Analysis Society Hitachi Riber Atomika Inficon Leybold-Heraeus ULVAC Balzers Varian ISBN-13: 978-3-642-61873-4 e-ISBN-13: 978-3-642-61871-0 001: 10.1007/978-3-642-61871-0 Library of Congress Cataloging in Publication Data International Conference on Secondary Ion Mass Spectrometry, 2d, Stanford University, 1979. Second- ary ion mass spectrometry, SIMS-II. (Springer series in chemical physics; v. 9) Includes index. I. Mass spectrometry-Congresses. I. Benninghoven, A. II. Title. III. Series. QD96.M3157 1979 543'.08 79-23997 This work is subject to copyright. All rights are reserved, whether the whole or part of the material is concerned, specifically those of translation, reprinting, re-use of illustrations, broadcasting, reproduction by photocopying machine or similar means, and storage in data banks. Under § 54 of the German Copyright Law where copies are made for other than private use, a fee is payable to the publisher, the amount of the fee to be determined by agreement with the publisher. © by Springer-Verlag New York 1979 Softcover reprint of the hardcover 1st edition 1979 The use of registered names, trademarks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. 2153-543210 I>reface The Second International Conference on Secondary Ion Mass Spectrometry (SIMS-II) was held at Stanford University. Stanford, California, from August 27-31. 1979. Over 80 invited and contributed papers, collected in the present volume, were presented to about 200 participants. It is the hope of the editors that these proceedings will meet the needs of the participants as well as those not able to attend, in order to make the best use of the information presented during the conference. SIMS-II was the second conference of its type--the first having been held in Muenster, West Germany, .in September 1977 with about the same number of papers and participants. This series of biannual conferences on secondary ion mass spectrometry has been created as a forum to bring together people who are working in the different fields of secondary ion emission. These conferences should encourage the exchange of results, ideas, and projects, with the final goal being a better understanding of the secondary ion emission process and its application--especially in the field of analysis. In this regard. SIMS-II was a very successful conference: papers dis- cussed fundamental aspects of SIMS as well as a wide range of analytical applications, supplying the participants with an excellent, up-to-date survey of the field. New ideas, recent results, experiments in progress, etc., were discussed following the presentations and also, on a more informal basis, in small .groups. Such informal exchanges are of great value in this type of highly specialized conference. The conference revealed very clearly that SIMS is still a very rapidly expanding field in both fundamental research as well as for its application. Today we are still far away from a complete understanding of the very complex processes which result in the emission of a charged atomic or molecular cluster. These processes include the sputtering process as well as the different electronic interactions which are responsible for the composition and final charge state of the emitted particles. There exist several VI approaches to a theoretical treatment of these processes. The challenging task for future theoretical work will be to go more and more in the direction of a combined consideration of these two groups of processes, thus approach- ing a real and complete understanding of the entire process of secondary ion formation. Understanding ion formation is also of great importance for the optimum application of secondary ion emission, especially in its most important field of analysis. This analytical application, particularly for quantitative analysis, has made great progress during the last few years. On the other hand, new fields of application such as analysis of organic compounds, localized isotopic analysis, the use of negative secondary ions--especially from Cs covered surfaces--etc., are still in the formative stages. Much of the success of SIMS-II resulted from the hospitality of Stanford University, its excellent facilities and attractive surroundings. Particular thanks are due the staff of the Stanford University conference scheduling office. We also want to acknowledge Mrs. Elfie Liebl and Mrs. Elaine Storms and family for their efforts during the conference; the session chairpersons for reviewing the submitted papers; and Ms .. S. Sargentini for typing the final manuscript. The financial support of our sponsors is gratefully acknowledged. Finally, we want to thank all those who participated in SIMS-II, especially those who attended from outside the United States, for making the conference as productive and informative as it was. Palo Alto, California A. Bennlnghoven September 1979 C. A. Evan&, 14. R. A. Powell R. Shimizu H. A. S~o~ Contents I. Fundamentals Chairpersons: D.E. Harrison and C.A. Evans, Jr. Invited: The Dynamics of Ion-Solid Interactions: A Basis for Under- standing SIMS By N. Winograd (With 2 Figures) .......................... 2 Invited: Simultaneous Measurements of Photon and Secondary Ion Emissions from Ion-Bombarded Metal Surfaces By T. Okutani and R. Shimizu (With 2 Figures) ............ 7 Atom Ejection Mechanisms and Models By D.E. Harrison, Jr., B.J. Garrison, and N. Winograd (With 1 Figure) ......•........•............................................ 12 New Models of Sputtering and Ion Knock-On Mixing By S.A. Schwarz and C.R. Helms (With 3 Fi gures) .................... 15 Clustering Distances in Secondary Ion Mass Spectrometry By F. Honda, Y. Fukuda, and J.W. Rabalais (With 2 Figures) .•....... 18 Basic Aspects in the Sputtering of Atoms, Ions, and Excited States By R. Kelly ....................................•..............•.... 21 Cluster Formation in SIMS: CO on PdAg By G.J. Sl usser (Wi th 1 Fi gure) ...............•...........•........ 26 Effect of Partial Oxygen Pressure on Metal Single Crystals Bombarded by Noble Gas Ions By M. Bernheim and G. Slodzian (With 5 Figures) .................... 29 A Comparison of Absolute Yields of Excited Neutrals and Positive Ions from Ion-Bombarded Surfaces By P. Williams, I.S.T. Tsong, and S. Tsuji ......................... 33 Correlation Between the Spectral Ionization Probability of Sputtered Atoms and the Electron Density of States By T.R. Lundquist (With 3 Figures) ........•........................ 34 Physical Aspects of the Valence Model's Parameters By C. Plog and W. Gerhard (With 4 Figures) ......................... 37 VIII Negative Ion Emission from Surfaces Covered with Cesium and -Bombarded by Noble Gas Ions By M. Bernheim, J. Rebiere, and G. Slodzian (With 4 Figures) ....... 40 Angle-Resolved SIMS--A New Technique for the Determination of Surface Structure By B.J. Garrison, S.P. Holland, and N. Winograd (With 2 Figures) .. 44 II. Quantitation Chairpersons: D.B. Wittry and P. Williams Invited: Factors Influencing Secondary Ion Yields By V.R. Deline (With 3 Figures) .......................... 48 Invited: Instrumental Effects on Quantitative Analysis by Secondary Ion Mass Spectrometry By D. E. Newbury .......................................... 53 A Quantitative Model for the Effects on Secondary Ion Emission of Gaseous Absorption at Solid Surfaces Under Noble Gas Ion Bombardment By J.N. Coles, Presented by G.L. Merrill (With 1 Figure) ........... 58 The Application of Ion Implantation to Quantitative SIMS Analysis By D.P. Leta and G.H. Morrison ..................................... 61 Energy Filtering and Quantitative SIMS Analysis of Silicates for Major and Trace Elements By N. Shimizu ...................................................... 62 Quantitative Analysis of Doped GaAs by Quadrupole SIMS By W. Gerigk and M. Maier (With 1 Figure) ........................... 64 Trace Element Analysis of Silicates by Ion Microprobe By C. Meyer, Jr. (With 1 Figure) .................................... 67 Imaging of Element Distributions by Ion Microprobe By J.H. Schilling (With 3 Figures) .................................. 70 Secondary Ion Emission from Titanium Alloys Under Argon and Oxygen Bombardment By J.M. Schroeer, A. Dely, and L.L. Deal (With 1 Figure) ............ 73 Effect of Alloying in Secondary Ion Emission from AgPd and CrNi Systems By M.L. Yu and W. Reuter (With 3 Figures) •........................•. 76 III. Semiconductors Chairpersons: C.W. fvlagee and H. Herner Invited: Quantitation of SIMS for Semiconductor Processing Technology By T.W. Sigmon (Hith 3 Figures) ........................... 80 IX Problems Encountered in Depth Profiling of Nitrogen and Oxygen in Silicon by Means of Secondary Ion Mass Spectrometry By W. Wach and K. Wi ttmaack (With 3 Fi gures) ........................ 85 Depth Profiling of Phosphorus in Silicon Using Cesium Bombardment Negative SIMS By C.W. Magee (With 4 Figures) ...................................... 88 Chromium and Iron Determination in GaAs Epitaxial Layers By A.M. Huber, G. Morillot, P. Merenda, and N.T. Linh (With 5 Fi gures) ............................................................ 91 Thermal Redistribution of Cr in GaAs Due to Damage, Stress and Concentration Gradients By C.A. Evans, Jr., V.R. Deline, and T.W. Sigmon .................... 95 On-Line Sputter Rate Measurements During SIMS, AES Depth Profiling By J. Kempf (With 4 Figures) ........................................ 97 Laser Induced Redistribution of Ion Implanted and Surface Deposited B in Silicon: A SIMS Study By W.H. Christie, R.J. Warmack, C.W. White, and J. Narayan (Wi th 3 Fi gures) .................................................... 100 SIMS Identification of Impurity Segregation to Grain Boundaries in Cast Multigrained Silicon By L.L. Kazmerski, P.J. Ireland, and T.F. Ciszek (With 3 Figures) ... 103 SIMS Studies in Compound Semiconductors By J.E. Baker, P. Williams, D.J. Wolford, J.D. Oberstar, and B.G. Streetman ...................................................... 106 Characterization for Composition and Uniformity of MCVD Glass Film by Secondary Ion Mass Spectrometry (SIMS) By D.L. Malm and G.W. Tasker (With 2 Figures) ....................... 107 SIMS Study of Metallized Silicon Semiconductors By K.L. Wang and H.A. Storms (With 2 Figures) ....................... 110 IV. static SIMS Chairperson: A. Benninghoven Invited: Molecular Secondary Ion Emission By A. Benni nghoven (With 6 Fi gures) ....................... 116 Invited: Analytical Applications of SIMS By D.M. Hercul es ..............•..........•................ 122 Static SIMS Investigations of Amino Acid Mixtures By S. Tamaki, A. Benninghoven and W. Sichtermann (With 3 Figures) ..• 127 Static SIMS of Amino Acid Overlayers By R.J. Colton, J.D. Ganjei, J.S. Murday and J.J. DeCorpo .•......... 130

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