Roll-To-Roll Vacuum Deposition of Barrier Coatings (Wiley-Scrivener)

751 Pages·2010·36.757 MB·English

by  Charles A. Bishop

49th Annual
Technical Conference
Proceedings
April 22–27, 2006
Washington, D.C. USA
Copyright © 2006 by the Society of Vacuum Coaters
71 Pinon Hill Place NE • Albuquerque, NM 87122-1914 USA
Telephone [phone] • Fax [phone]
E-mail [email protected]
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Executive Director: Vivienne Harwood Mattox
Technical Director: Donald M. Mattox
Annual Technical
Conference Proceedings
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48th Annual Technical Conference Proceedings (2005) ISSN 0737-5921
49th Annual Technical Conference Proceedings (2006) ISSN 0737-5921
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Society of Vacuum Coaters
49th Annual Technical Conference Proceedings
Published by:
Society of Vacuum Coaters
71 Pinon Hill Place NE
Albuquerque, NM 87122-1914 USA
Telephone [phone]
Fax [phone]
E-mail [email protected]
Web Site www.svc.org
ISSN 0737-5921
Printed in the United States of America
ii
2006 Conference
Program Committee
General Program Chair
Ludvik Martinu, École Polytechnique, Canada
Assistant Program Chair
Ric Shimshock, MLD Technologies LLC
Director of TACs
Hana Baránková, Uppsala University, Sweden
Tribological & Decorative Coating
Roel Tietema, Hauzer Techno Coating BV, The Netherlands
Gary L. Doll, Timken Research
Jolanta Klemberg-Sapieha, École Polytechnique, Canada
Optical Coating
Ian Stevenson, Denton Vacuum, LLC
Bryant Hichwa, Sonoma State University
Plasma Processing
Scott Walton, US Naval Research Laboratory
Arutiun Ehiasarian, Sheffield Hallam University, UK
Falk Milde, VON ARDENNE Anlagentechnik GmbH, Germany
Process Control & Instrumentation
J. Grant Armstrong, Carberry Technologies
David Chamberlain, MKS Instruments, Inc.
Large Area Coating
Michael Andreasen, VACUUM EDGE
Johannes Strümpfel, VON ARDENNE Anlagentechnik GmbH, Germany
Emerging Technologies and Heuréka! Session
Hana Baránková, Uppsala University, Sweden
Ladislav Bárdos, Uppsala University, Sweden
Vacuum Web Coating
Charles Bishop, C.A. Bishop Consulting Ltd., UK
Gregory Tullo, SE Associates, Inc.
Smart Materials
Carl Lampert, Star Science
Ric Shimshock, MLD Technologies
Claes G. Granqvist, Uppsala University, Sweden
Bernd Szyszka, Fraunhofer Institute for Surface Engineering and Thin Films IST, Braunschweig, Germany
Frederik Krebs, Risø National Laboratory, Roskilde, Denmark
Innovators Showcase
Frank T. Zimone, Denton Vacuum, LLC
Education Committee Chair
S. Ismat Shah, University of Delaware
Exhibit Committee Chair
Cathi Baker, AEI
“Meet the Experts” Corner
Donald M. Mattox, SVC Technical Director
Conference Administrator
Vivienne Harwood Mattox, SVC Executive Director
xiii
Author Index and
Advertisments
S O C I E T Y of VA C U U M C OAT E R S
AAuutthhoorr IInnddeexx
A Brown, M. 06-11 Deng, Y. 06-114
Brown, W. 06-57 Desjardins, P. 06-55
Abraham, B. 06-17 Bücken, 06-140 Deus, C. 06-41, 06-44
Abunie, Z. 06-31 Bujanda, A. 06-72 Dilshad, M. 06-82
Acosta, G.A 06-61 Bundgaard, E. 06-84 Dittrich, R. 06-52
Aliev, A.E. 06-87 Burcalova, K. 06-65 Dixit, P.N. 06-82
Allred, D.D. 06-61 Burtner, D. 06-130 Doll, G.L. 06-106
Allsop, N. 06-88 Buyle, G. 06-80 Domnick, R. 06-53
Amassian, A. 06-55 Buzea, C. 06-126 Dowling, D.P. 06-19
Amberla, T. 06-15 Byrne, G. 06-19 Duckham, A. 06-11
Anders, A. 06-12 Duggan, P. 06-19
Anguita, J. 06-06 C Duncan, B. 06-125
Arkwright, J. 06-48
Arnell, R.D. 06-99 Cameron, D.C. 06-23, 06-100 E, F
Arps, J. 06-115 Carignan, C. 06-58
Asonen, H. 06-15 Carlsson, J. 06-64 Eerden, M. 06-108
Assender, H.E. 06-119 Carr, K. 06-120 Ehiasarian, A.P. 06-67
Atkinson, K.R. 06-87 Castagna, W. 06-120 Eichler, 06-74
Azens, A. 06-93 Cernosek, J. 06-115 Elliott, C. 06-126
Cha, L. 06-34 Ellwanger, R. 06-07
B Chang, C.-L. 06-137 Ermakov, Y. 06-09
Chen, X. 06-34 Eufinger, K. 06-89
Baloukas, B. 06-60 Chiba, D. 06-111 Faber, J. 06-41
Bandorf, R. 06-04, 06-78, 06-101 Chistyakov, R. 06-17 Falz, M. 06-140
Bär, M. 06-88 Cho, J. 06-09, 06-122 Fan, C. 06-34
Baránková, H. 06-08 Choi, H.W. 06-122 Fan, Z.X. 06-49
Bárdos, L. 06-08 Choi, W.K. 06-09, 06-122 Fang, M. 06-49
Barnat, E.V. 06-69 Choukourov, A. 06-75 Fang, S. 06-87
Bauer, G. 06-53 Chow, R. 06-06 Farnsworth-Brimhall, N. 06-61
Bauer, M. 06-53 Christie, D.J. 06-36, 06-66 Fernsler, R.F. 06-76
Baughman, R.H. 06-87 Clynes, M. 06-23 Finke, S.J. 06-60
Becker, K. 06-80 Colton, J.M. 06-67 Firon, M. 06-83
Belkin, V.S. 06-71 Coombs, A.W. 06-06 Fischer, Ch.-H. 06-88
Belkind, A. 06-80 Copeland, N. 06-116 Fischer, D. 06-110
Bellido-Gonzalez, V. 06-16 Coulter, K. 06-115 Foest, R. 06-13
Bellum, J. 06-62 Counsell, J. 06-16 Freeman, D.R. 06-26, 06-40
Belzner, M. 06-53 Crawford, D. 06-128 Frencken, V. 06-96
Bennett, W.D. 06-27, 06-57, 06-114 Creatore, M. 06-28, 06-30 Friedel, R. 06-53
Betz, U. 06-112 Culbertson, E. 06-123 Fritz, T. 06-38
Bewilogua, K. 06-97 Cushing, D. 06-47, 06-131 Fulton, M.L. 06-12
Bhardwaj, A. 06-82 Czarnowska, E. 06-21
Bialuch, I. 06-97 G
Biancardo, M. 06-85 D
Biederman, H. 06-75 Gallagher, W. 06-19
Bishop, C.A. 06-118 Daniel, B. 06-16 Gao, J. 06-124
Blake, D.M. 06-05 Daniels, S.M. 06-23 Gebhardt, B. 06-140
Blauw, M.A. 06-28 Dariani, R. 06-126 Geisler, M. 06-32
Blondeel, A. 06-37, 06-42, 06-138, Dasse, K.A. 06-18 Genov, S. 06-53
06-139 Daugela, A. 06-109 Gerloff, C. 06-66
Böhlmark, J. 06-64 De Bettignies, R. 06-83 Gevelber, M. 06-62, 06-79
Bonds, T.A. 06-70 De Bosscher, W. 06-37, 06-42, Gibson, D.R. 06-51
Bonetti, R. 06-95 06-138, 06-139 Giesel, P. 06-52
Bonham, C.C. 06-27 de Denus-Baillargeon, M.-M. 06-58 Gilbert, R.J. 06-18
Boos, M. 06-45 De Gryse, R. 06-80, 06-89 Gitis, N. 06-109
Boxman, R.L. 06-31 Dearnley, P.A. 06-94 Glitsch, S. 06-136
Brewster, A. 06-79 Dellaert, K. 06-139 Gobin, G. 06-138
Brinkley, I.T. 06-51 Delrue, H. 06-37, 06-138 Goetzelmann, R. 06-45
Brost, R.C. 06-40 Demaree, J.D. 06-72 Goodwin, K. 06-114
The first number after the author’s name indicates the publication year of the Proceedings; the second number indicates the paper number in that Proceedings issue (as
listed in the Table of Contents). Example: 06-58 indicates paper number 58 in the Conference Proceedings published in 2006.
759
Author Index
Grace, J.M. 06-26, 06-40 Kozlov, M. 06-87 Misiano, C. 06-24
Graff, G.L. 06-27 Krebs, F.C. 06-84, 06-85, 06-91 Momaya, A. 06-125
Granqvist, C.G. 06-93 Kricheldorf, U. 06-52 Monaghan, D. 06-16
Gross, M.E. 06-27, 06-114 Krug, T. 06-108 Monzyk, B.F. 06-18
Grovenor, C.R.M. 06-119 Kudlacek, P. 06-65 Morse, P. 06-104
Gudmundsson, J.T. 06-63 Kuiry, S. 06-109 Morton, D.E. 06-60
Gustavsson, L.-E. 06-08 Kulmala, M. 06-15 Muffler, H.-J. 06-88
Kumar, M.M. 06-23 Münz, W.D. 06-102
H, I, J Kumar, S. 06-82 Murphy, E. 06-01
Kundu, S. 06-27 Musil, J. 06-65
Hagedorn, H. 06-45 Kunkel, S. 06-102
Hall, G.H. 06-51 Kusano, E. 06-03 N, O
Hanus, J. 06-75 Küster, R. 06-101
Hartvigsen, A. 06-113 Kustosz, R. 06-21 Nagel, P. 06-95
Hauert, R. 06-22 Lackner, J.M. 06-10, 06-21 Needham, D. 06-125
He, Z. 06-11 Landsbergen, J. 06-108 Newson, J. 06-11
Heaney, J.B. 06-56 Lang, N. 06-136 Newton, R. 06-114
Hebner, G.A. 06-69 Lange, H. 06-13 Ng, N. 06-92
Hedbavny, P. 06-133 Langereis, E. 06-30 Nörenberg, H. 06-121, 06-127
Heil, S.B.S. 06-30 Lappalainen, R. 06-15 Nourgostar, S. 06-70
Hempel, F. 06-136 Larouche, S. 06-59 Novák, S. 06-132, 06-133
Henry, B.M. 06-119 Lattemann, M. 06-64 Obst, H. 06-41
Hernandez, O. 06-58 Lee, S.B. 06-87 Ochs, D. 06-39
Heszler, P. 06-93 Leonhardt, D. 06-73, 06-76 Ockenfuss, G. 06-46
Hildebrand, C. 06-79 Leroy, J. 06-83 Oehr, C. 06-20
Hildebrand, J. 06-79 Li, G. 06-90 Ohsaki, H. 06-29
Hirvonen, J.K. 06-72 Lin, F. 06-134 Olsen, L.C. 06-27
Hovsepian, P.Eh. 06-67 Lin, Y. 06-11 Olsson, M.K. 06-112
Howells, D. 06-119 Lira-Cantu, M. 06-91 O’Neill, L. 06-120
Hrach, R. 06-132 List, M. 06-32 Oró, J. 06-91
Huang, J. 06-90 Liu, T.H. 06-103, 06-107 Österlund, L. 06-93
Huebner, M. 06-136 Liu, X. 06-34
Hynes, A. 06-120 Liu, Y. 06-98 P, Q, R
Jensen, R. 06-72 Liu, Z. 06-99
Lohmann, V.I.T.A. 06-28 Pappas, D. 06-72
K, L Long, M. 06-40 Pavlik, J. 06-133
Lüthje, H. 06-101 Peeters, P. 06-108
Kääriäinen, T. 06-100 Lux-Steiner, M.C. 06-88 Pelleymounter, D. 06-128
Kahn, J.R. 06-68 Percy, M. 06-121
Kapoor, S. 06-114 M Pessa, M. 06-15
Kastner, A. 06-32 Pflug, A. 06-43, 06-81
Kato, K. 06-86 Ma, P. 06-134 Phillips, A. 06-57
Kaufman, H.R. 06-68 Macherius, U. 06-136 Pistner, J. 06-38
Kelly, P.J. 06-99 Madocks, J. 06-104 Poelman, D. 06-89
Kennedy, C.E. 06-05, 06-50 Mahoney, L. 06-130 Poelman, H. 06-89
Kennedy, J. 06-120 Major, B. 06-21 Posey, R. 06-123
Kessels, W.M.M. 06-30 Major, R. 06-21 Prasad, G.R. 06-23
Keunecke, M. 06-97 Marcus, P. 06-104 Price, H. 06-50
Kim, B.J. 06-122 Marin, G.B. 06-89 Pridoehl, H. 06-136
Kim, Y.S. 06-122 Marke, S. 06-78 Proehl, H. 06-44
Kinbara, A. 06-29 Marras, L. 06-119 Rahamathunnisa, M. 06-100
Kindel, E. 06-13 Martin, P.M. 06-18, 06-27, 06-57 Rajput, S.S. 06-82
Kish, L.B. 06-93 Martinu, L. 06-25, 06-55, 06-58, 06-59 Rauthan, C.M.S. 06-82
Klages, C.-P. 06-74 Matousek, 06-133 Redden, N.P. 06-26, 06-40
Klemberg-Sapieha, J.E. 06-25, 06-60 Matthews, S. 06-37 Reimann, G. 06-62, 06-79
Klosch, M. 06-38 Mayrhofer, P.H. 06-105 Reinhard, C. 06-67
Klug, J. 06-26 McCann, D. 06-33 Reinhold, E. 06-41
Klug, W. 06-45 McFall, M. 06-128 Reiter, A.E. 06-105
Köngäs, J. 06-15 McKnight, S. 06-72 Rekow, M. 06-15
Koppe, B.E. 06-40 Meng, L.-J. 06-124 Renders, R. 06-96
Kosik, W. 06-72 Mikami, K. 06-111 Rettich, T. 06-39
Kousal, J. 06-75 Miller, I. 06-19 Rho, D.H. 06-135
760
Author Index
Richter, Jr., H. 06-102 Stancu, G.D. 06-136 Wallace, V. 06-57
Richter, U. 06-52 Stevenson, I. 06-60 Wallendorf, T. 06-04, 06-78
Rickers, C. 06-52 Stieber, M. 06-13 Wallin, F. 06-35
Robbie, K. 06-126 Stilburn, J. 06-57 Walls, J.M. 06-51
Roberge, C. 06-25 Stouffer, G.A. 06-02 Walton, S.G. 06-73, 06-76
Roepcke, J. 06-136 Stranning, H. 06-64 Wang, C.B. 06-98
Roth, J.R. 06-70 Stryhal, Z. 06-133 Wang, D.-Y. 06-137
Ruske, F. 06-66 Su, C.T. 06-103 Wang, T. 06-124
Su, Y.L. 06-103, 06-107 Wang, X. 06-124
S Subramanian, J.S. 06-11 Watanabe, T. 06-29
Suzuki, M. 06-29 Weber, M. 06-97
Saß, S. 06-136 Švec, M. 06-132 Weichart, J. 06-77
Sakamoto, H. 06-111 Swallow, F. 06-120 Weinert, H.H. 06-117
Salminen, T. 06-15 Szyszka, B. 06-43, 06-66, 06-81 Weltmann, K.-D. 06-13, 06-136
Scandurra, R. 06-24 Welzel, S. 06-136
Scherer, M. 06-38 T Werner, W. 06-66
Schiffmann, K. 06-04, 06-52 Willey, R.R. 06-54, 06-129
Schmidt, M.A. 06-06 Tacken, R. 06-96 Williams, C.D. 06-87
Schrauwen, C. 06-96 Tanttari, M. 06-100 Willmann, H. 06-105
Schwambera, M. 06-14 Thomas, M. 06-74 Wittorf, R. 06-97
Sebag, J. 06-57 Thompson, M. 06-102 Wityak, G.M. 06-42
Selinder, T. 06-64 Thomsen, H. 06-97 Wolf, R. 06-07
Sentein, C. 06-83 Thwaites, M.J. 06-06 Wright, L.L. 06-123
Seta, M.E. 06-114 Tietema, R. 06-108
Severin, D. 06-81 Tobler, M. 06-95 X, Y, Z
Shanmugamurthy, S. 06-80 Topping, J.A. 06-119
Shibayama, Y. 06-29 Trassl, R. 06-32 Xiao, J. 06-109
Shigesato, Y. 06-86 Tsuchiya, H. 06-111 Xu, B. 06-62
Shingell, K. 06-25 Tullo, G. 06-118 Xu, S. 06-34
Shrotriya, V. 06-90 Turley, R.S. 06-61 Yamazaki, Y. 06-102
Shun’ko, E.V. 06-71 Yang, J. 06-126
Siddiqui, Y. 06-128 U, V, W Yang, Y. 06-34, 06-90
Siemers, M. 06-43, 06-81 Yao, S.H. 06-103
Sick, J.-H. 06-101 van de Sanden, M.C.M. 06-28, 06-30 Yao, Y. 06-90
Siegfried, D. 06-130 van der Kolk, G. 06-95 Yashiro, H. 06-29
Siemers, M. 06-81 Van Holsbeke, J. 06-37 Yehoda, J.E. 06-60
Sittinger, V. 06-66 van Oudheusden, T. 06-96 Yen, C.-C. 06-137
Skobeltsyn, D.V. 06-09 Vattiat, B. 06-79 Yi, K. 06-49
Škvor, J. 06-132 Vergöhl, M. 06-04, 06-52 Yializis, A. 06-07
Slavinska, D. 06-75 Verlinden, B. 06-139 Yoo, S.M. 06-135
Smith, A.W. 06-116 Verly, P.G. 06-134 Yu, D.Y. 06-98
Smith, D. 06-62 Vernhes, R. 06-60 Yu, X. 06-98
Smith, I. 06-95 Viitanen, N. 06-15 Zabeida, O. 06-25
Snyders, R. 06-25, 06-60 Vinogradov, 06-109 Zakhidov, A.A. 06-87
So, L. 06-92 Visser, R.J. 06-114 Zhang, M. 06-87
Söderström, D. 06-08 Vlcek, J. 06-65 Zhitomirsky, V.N. 06-31
Spee, K. 06-96 Vuoristo, P. 06-15 Ziegler, Y. 06-110
Sproul, W.D. 06-17 Waddell, E.M. 06-51 Zimmermann, H. 06-136
Staelens, K. 06-138 Waldhauser, W. 06-10, 06-21 Zoeller, A. 06-45
761
Emerging Technologies
S O C I E T Y of VA C U U M C OAT E R S
Modification of Film Structure in Pulsed and
Inductively-coupled-plasma assisted Pulse Sputtering
E. Kusano, Advanced Materials Science Research and Development Center,
Kanazawa Institute of Technology, Hakusan, Ishikawa, Japan
ABSTRACT erated by a one-turn antenna set in the front of the electrode
to which the pulsed power was applied. Inductively coupled
Titanium and titanium nitride films have been deposited by
plasma features the generation of a high electron density plasma
pulsed or inductively-coupled-plasma (ICP) assisted pulse
compared to those in capacitively-coupled-plasma.
sputtering to investigate effects of energies of ions arriving to
the substrate on film structure. Target used in the experiment
EXPERIMENTAL METHOD
was pure Ti. TiN was deposited by reactive sputtering using
argon and nitrogen mixture. Ion energy was measured by an Process Analysis
energy resolved type mass spectrometer. Plasma parameters of The sputtering apparatus used in the process analysis experiment
the discharges were measured by a time resolved type single was an ULVAC ultra-high vacuum sputtering system (Figure
probe. Film structure was investigated by cross sectional scan- 1). The cylindrical vacuum chamber of the apparatus is 350
ning electron microscopy. Film deposited by pulsed sputtering mm diameter and 440 mm height. A magnetron cathode (55
become denser compared to those by dc sputtering. Further mm diam.) is mounted on the bottom plate of the chamber.
densification was investigated for films deposited by ICP as- The target was Ti (99.98%). A copper one-turn rf antenna with
sisted pulsed sputtering. The power transferred to the substrate a diameter of 60 mm was equipped about 20 mm above the
increased by 2 to 2.5 orders by ICP assist, resulting from the cathode. A schematic drawing of the chamber is shown in Figure
increase both in the amount and in average energy of ions. As 1. The power supply used in this experiment was ENI TYPE
a result of the increase in power transferred to the substrate PRG-50 pulse power supply. The working gas was a mixture
by ions, average energy of particles (atoms and ions) arriving of Ar (99.9999% purity) and N (99.998% purity) and injected
2
to substrate increased to about 30 eV in ICP assisted pulsed into the cathode region. Discharge pressure was 0.4 Pa.
sputtering from a few eV in dc sputtering. It is concluded that
a high average energy of particles results in film densification
in ICP assisted pulsed sputtering.
INTRODUCTION
Pulsed sputtering has been developed as a technique to stabilize
reactive sputtering process [1-4]. Recently it has been also
reported that pulsed sputtering can be applied to modify film
structure in sputtering [5,6]. A high energy ion flux assists the
film structure modification. Mechanisms of the formation of
high energy flux have been reported to be the increase in ion
density in the discharge and the increase in plasma potential
in the period of positive bias application in pulsed sputtering.
However, electron density in the period of positive bias greatly
drops because electrons are attracted to and diminished on
the surface of the positively biased electrode. The electron
density in pulsed plasma is reported to be a half to one order
smaller than that of dc plasma. To enhance the effects of ion
bombardment on the structure modification, a high electron
density, i.e., high ion flux intensity to the substrate or growing
film is preferable.
In this paper film structure modification in pulsed and induc-
Figure 1: Schematic of the experimental setup for process
tively-coupled-rf-plasma assisted pulsed sputtering has been
analysis.
reviewed. In the reported study, the assisting plasma is gen-
© 2006 Society of Vacuum Coaters 505/856-7188 15
49th Annual Technical Conference Proceedings (2006) ISSN 0737-5921
The cathode was operated at current regulation mode. A fed
current was controlled to be 0.3 A for the negative bias pe-
riod. Pulse frequency was 50 kHz. The ratio of (positive bias)
/(positive+negative bias periods) was 0.4. Rf power applied
for the inductively coupled antenna was changed from 0 to
200W.
A PPM-421 plasma monitor (Balzers) mounted vertically on
the top of the chamber was used to analyze a mass/charge
ratio and energy of particles arriving to the substrate. The
distance between the cathode surface and the orifice of the
plasma monitor is 200 mm. The energy range measured by
the plasma monitor was 0 to 100 eV. The energy resolution is
<0.3 eV for the full-scale range of 500 eV. The plasma monitor Figure 2: Ti ion spectra of dc, pulsed, and rf-plasma assisted
was operated in the ion correction mode (only ions can pass pulsed sputtering for a constant discharge current of 0.5 A
the energy filter). and a pulse frequency of 50 kHz in ICP assisted pulsed Ti
sputtering.
Film Deposition
TiN films were deposited by a batch type sputtering machine.
The target size was 75 mm in diameter. The antenna was In Figure 3, the number of Ti+ ion, power of Ti+ ion, and mean
equipped in the front of the cathode. Substrate was not heated energy of Ti+ ion are shown as a function of ICP-assisting
during deposition runs. Discharge pressure was 0.4 Pa. Substrate coil power. The number of Ti ions arriving to the substrate
were Si wafer and aluminosilicate glass. drastically increases in pulsed sputtering compared to those
in dc sputtering and further increases in ICP-assisted pulsed
Working gases were the same as those for process analysis sputtering. The number of Ti+ ions is about 10 times larger in
system. Discharge pressure was kept at 0.4 Pa. Discharge and ICP-assisted pulsed sputtering compared to that in dc sputtering.
rf antenna powers were the same as those applied in process The mean energy of Ti+ ions also increases to about 90 eV in
analysis. ICP assisted pulsed sputtering. As a result of the increase in
the quantity and mean energy, the power transferred to the
Film Analysis substrate increases by the about order of two.
Cross-sectional images of films were observed by scanning
electron microscope (Hitachi Ltd., S-4500). Film structure
was evaluated by X-ray diffraction measurements by RIGAKU
Rint-Ultima Type X-ray diffractmeter.
FILM STRUCTURE MODIFICATION IN TI
SPUTTERING [6]
In Figure 2, Ti+ ion spectra in dc, pulsed, and ICP assisted
pulsed sputtering are shown for a pulse frequency of 50 kHz.
Dc sputtering shows a sharp hair-pin shape spectrum with a
peak energy of about 1eV. In pulsed sputtering, the second
peak appears in an energy range in about 40-50 eV in addition
to the peak at about 2-3 eV. With increasing the ICP-assisting
coil power, both peaks in low and high energy spread to high
Figure 3: The number of Ti+ ion, power of Ti+ ion, and mean
energy.
energy of Ti+ ion as a function of ICP-assisting coil power in
ICP assisted pulsed Ti sputtering.
In Figure 4, plasma potential, electron temperature, and electron
density are shown as a function of time. The period of 0-8 s
is the positive bias phase. In the phase of negative bias, plasma
potential is about 2-3 V, electron temperature is about 1 eV, and
electron density is 2x108 cm-3 in pulsed sputtering. The values
of plasma potential and electron temperature are almost the
16