Quantum Dot Devices

375 Pages·2012·13.425 MB·English

by  Zhiming M. Wang

Lecture Notes in Nanoscale Science
and Technology
Volume 13
Series Editors
Zhiming M. Wang
State Key Laboratory of Electronic, Thin Flim and Integrated Devices,
University of Electronic Science and Technology,
Chengdu, People’s Republic of China
Andreas Waag
Institutfur Halbleitertechnik, TU Braunschweig, Braunschweig, Germany
Greg Salamo
Department of Physics, University of Arkansas, Fayetteville, AR, USA
Naoki Kishimoto
Quantum Beam Center, National Institue for Materials Science, Tsukuba,
Ibaraki, Japan
Stefano Bellucci
Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare,
Frascati, Italy
For furthervolumes:
http://www.springer.com/series/7544
Zhiming M. Wang
Editor
Quantum Dot Devices
123
Editor
Zhiming M.Wang
State KeyLaboratory ofElectronic
ThinFilm and IntegratedDevices
Universityof Electronic Science
and Technology
Chengdu
People’s Republic ofChina
ISBN 978-1-4614-3569-3 ISBN 978-1-4614-3570-9 (eBook)
DOI 10.1007/978-1-4614-3570-9
SpringerNewYorkHeidelbergDordrechtLondon
LibraryofCongressControlNumber:2012937780
(cid:2)SpringerScience+BusinessMediaNewYork2012
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Preface
The last 20 years have seen the rise of three-dimensional quantum-confined
nanostructures, so-called quantum dots, and the birth of entirely new device
architectures based on them. These structures may be fabricated by top-down
methods,suchaslithographictechniques,orbyself-assembly,asintheformation
of epitaxial quantum dots or chemical synthesis of colloidal dots. There are sig-
nificant efforts to control the size, shape, and distribution of quantum dots, to
characterize their optical and electronic properties, and to find their technological
applications. The research on quantum dots has a strong impact in terms of both
physics anddevices.Thefuturedevelopmentofthisfieldlargelydependsonhow
quantum dots can be used as nanomaterials in real-world applications. This book
aims to convey the current status of quantum dot devices and how these devices
take advantage of quantum features.
Quantum dot lasers have been extensively investigated and many advanced
characteristics duetoquantum confinementhave been demonstrated. Therefore,a
significant part of the chapter contributions deals with lasers. Chapter 1 covers
optically injected single-mode quantum dot lasers. Chapters 2–4 focus on mode-
locked lasers. Chapter 2 reviews two exotic behaviors, dark pulses mode-locking
and wavelength bistability, both leading to unexpected and exciting performance
characteristics.Chapter3analyzesthespectralsplittingeffectsinthegroundstate
and their influence on the performance of quantum dot mode-locked lasers.
Chapter 4 reports on characteristics of passively mode-locked lasers based on
quantum dots and their manipulation via external optical injection. Chapter 5
continuesthefocusonquantumdotlasersbutemphasizesthecatastrophicoptical
damage in high power applications.
The post-growth intermixing effect was studied in Chap. 6, not only for its
impact on high power lasers but also on broadband devices such as quantum dot
superluminescent diodes and amplifiers. Both Chaps. 7 and 8 cover quantum-dot
applications in photonic crystals. Chapter 7 starts with the basics of photonic
crystal cavities and continuous wave lasing in quantum dot nanobeam cavities,
followed bya discussion onthe dynamicsof low-thresholdquantumdotphotonic
crystal lasers and an introduction to electrical pumping of photonic crystal and
v
vi Preface
nanobeam devices. Chapter 8 reports on submonolayer quantum dot photonic-
crystal light-emitting diodes for fiber optic applications.
Progress toward all optical signal processing is discussed in Chaps. 9–12.
Chapter9presentsatheoreticalstudyofaquantumopticaltransistorwithasingle
quantumdotinaphotoniccrystalnanocavityandaquantummemoryforlightwith
a quantum dot embedded in a nanomechanical resonator. Chapter 10 investigates
in detail all optical quantum dot switches using a vertical cavity approach and
demonstrates that quantum dots are promising candidates for next generation
photonicdevicesneededforpowerefficientopticalnetworks.Chapter11describes
experimental studies of ultrafast carrier dynamics and all-optical switching in
semiconductorquantumdotsusingultrafastterahertztechniques.Chapter12offers
anextensiveoverviewofnonlinearopticsandsaturationbehaviorofquantumdot
samples under continuous wave driving.
Quantum dot photovoltaic applications are the subject of Chaps. 13 and 14.
Chapter 13 theoretically and experimentally demonstrates that quantum dots with
engineered built-in charge can significantly enhance the device performances of
solar cells and infrared photodetectors. Chapter 14 studies the performance of
semiconductor quantum dot-sensitized solar cells employing nanostructured
photoanodes with different morphologies.
Chapter 15 highlights a plethora of optoelectronic applications of colloidal
quantumdots,includingnotonlyphotoluminescentdevices,light-emittingdiodes,
displays,photodetectors,andsolarcellsbutalsoothernoveldeviceconceptssuch
as biomolecule-based molecular sensors.
Last but not least, the editor wishes to thank all the authors for their excellent
contributions. It took longer than planned to finalize the book because of the
editor’s move from the United States to China to accept a professorship in the
national 1,000-talents program, and I am grateful to the chapter authors for their
patience and understanding.
Chengdu, February 2012 Zhiming M. Wang
Contents
1 Optically Injected Single-Mode Quantum Dot Lasers. . . . . . . . . . 1
B. Kelleher, D. Goulding, S. P. Hegarty, G. Huyet, E. A. Viktorov
and T. Erneux
2 Exotic Behavior in Quantum Dot Mode-Locked Lasers:
Dark Pulses and Bistability. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Kevin Silverman, Mingming Feng, Richard Mirin and Steven Cundiff
3 Spectral Splitting Effects and Their Influence to the Performance
of Quantum Dot Mode Locked Lasers. . . . . . . . . . . . . . . . . . . . . 49
Charis Mesaritakis and Dimitris Syvridis
4 Mode-Locked Semiconductor Lasers with Optical Injection. . . . . 65
Tatiana Habruseva, Natalia Rebrova, Stephen P. Hegarty
and Guillaume Huyet
5 Catastrophic Optical Damage in Quantum Dot Lasers. . . . . . . . . 93
Ching Kean Chia and Mark Hopkinson
6 Post-Growth Intermixing of GaAs Based
Quantum Dot Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Ziyang Zhang and R. A. Hogg
7 Photonic Crystal Cavity Lasers. . . . . . . . . . . . . . . . . . . . . . . . . . 131
Yiyang Gong, Bryan Ellis and Jelena Vucˇkovic´
8 InGaAs Submonolayer Quantum-Dot Photonic-Crystal LEDs
for Fiber-Optic Communications. . . . . . . . . . . . . . . . . . . . . . . . . 159
Hung-Pin D. Yang
vii
viii Contents
9 Quantum Optical Transistor and Other Devices
Based on Nanostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Jin-Jin Li and Ka-Di Zhu
10 Quantum Dot Switches: Towards Nanoscale Power-Efficient
All-Optical Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Chao-Yuan Jin, Mark Hopkinson, Osamu Kojima, Takashi Kita,
Kouichi Akahane and Osamu Wada
11 Ultrafast Terahertz Dynamics and Switching
in Quantum Dots . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 223
Dmitry Turchinovich and Matthias C. Hoffmann
12 Nonlinear Optics and Saturation Behavior of Quantum
Dot Samples Under Continuous Wave Driving . . . . . . . . . . . . . . 251
T. Ackemann, A. Tierno, R. Kuszelewicz, S. Barbay, M. Brambilla,
C. G. Leburn and C. T. A. Brown
13 Quantum Dots with Built-in Charge for Enhancing Quantum
Dot Solar Cells and Infrared Photodetectors. . . . . . . . . . . . . . . . 297
Kimberly A. Sablon, V. Mitin, J. W. Little, A. Sergeev
and N. Vagidov
14 Semiconductor Quantum Dot-Sensitized Solar Cells
Employing TiO Nanostructured Photoanodes
2
with Different Morphologies. . . . . . . . . . . . . . . . . . . . . . . . . . . . 317
Qing Shen and Taro Toyoda
15 Optoelectronic Applications of Colloidal Quantum Dots. . . . . . . . 351
Zhiping Wang, Nanzhu Zhang, Kimber Brenneman, Tsai Chin Wu,
Hyeson Jung, Sushmita Biswas, Banani Sen, Kitt Reinhardt,
Sicheng Liao, Michael A. Stroscio and Mitra Dutta
Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 369
Contributors
T. Ackemann SUPA and Department of Physics, University of Strathclyde,
Glasgow, G4 0NG Scotland, UK, e-mail: [email protected]
Kouichi Akahane National Institute of Information and Communications Tech-
nology, Tokyo 184-8795, Japan, e-mail: [email protected]
S. Barbay Laboratoire de Photonique et de Nanostructures, CNRS, Route de
Nozay, 91460 Marcoussis, France, e-mail: [email protected]
SushmitaBiswasElectricalandComputerEngineeringDepartment,Universityof
Illinois at Chicago (UIC), 851 S. Morgan Street, Chicago, IL 60607, USA
M. Brambilla CNISM e Dipartimento Interateneo di Fisica, via Amendola 173,
70126 Bari, Italy, e-mail: brambilla@fisica.uniba.it
Kimber Brenneman Bioengineering Department, University of Illinois at
Chicago, 851 S. Morgan Street, Chicago, IL 60607, USA
C. T. A. Brown SUPA and School of Physics and Astronomy, University of St.
Andrews, St. Andrews, Scotland KY16 9SS, UK, e-mail: [email protected]
Ching Kean Chia Institute of Materials Research and Engineering, 3 Research
Link, Singapore 117602, Singapore, e-mail: [email protected]
Steven Cundiff Quantum Physics Division, JILA National Institute of Standards
and Technology and University of Colorado, Boulder, CO 80305, USA, e-mail:
[email protected]
Mitra Dutta Electrical and Computer Engineering Department, University of
Illinois at Chicago (UIC), 851 S. Morgan Street, Chicago, IL 60607, USA
Bryan Ellis Soraa Inc., 6500 Kaiser Dr, Fremont, CA 94555-3613, USADepart-
ment of Electrical Engineering, Standford University, Stanford, CA 94305, USA
ix
x Contributors
Thomas Erneux Université Libre de Bruxelles, Optique Nonlinéaire Théorique,
Campus Plaine, Code Postal 231, 1050 Bruxelles, Belgium, e-mail: terneux@
ulv.ac.be
Mingming Feng Optoelectronics Division, National Institute of Standards and
Technology, Boulder, CO 80305, USA, e-mail: [email protected]
TatianaGabrusevaCenterofAdvancedPhotonicsandProcessAnalysis,Applied
Physics and Instrumentation, Cork Institute of Technology and Tyndall National
Institute, Lee Maltings, Prospect Row, Cork, Ireland
Yiyang Gong Department of Electrical Engineering, Standford University, Stan-
ford, CA 94305, USA, e-mail: [email protected]
David Goulding Tyndall National Institute, University College Cork, Lee
Maltings, Dyke Parade, Cork, Ireland
Stephen P. Hegarty Tyndall National Institute, University College Cork, Lee
Maltings, Dyke Parade, Cork, IrelandCenter of Advanced Photonics and Process
Analysis, Cork Institute of Technology and Tyndall National Institute, Cork,
Ireland
Matthias C. Hoffmann Max Planck Research Department for Structural
Dynamics, University of Hamburg, CFEL, 22607 Hamburg, Germany, e-mail:
[email protected]
RichardA.HoggESPRCNationalCentreforIII-VTechnologies,Departmentof
Electronic and Electrical Engineering, Centre for Nanoscience and Technology,
UniversityofSheffield,NorthcampusBroadlane,S37HQ Sheffield,UK,e-mail:
[email protected]
MarkHopkinsonDepartmentofElectronicandElectricalEngineering,University
ofSheffield,SheffieldS13JD,UK,e-mail:m.hopkinson@sheffield.ac.uk
Guillaume Huyet Centre for Advanced Photonics and Process Analysis, Cork
Institute of Technology and Tyndall National Institute, Lee Maltings, Dyke
Parade, Cork, Ireland, e-mail: [email protected]
Chao-YuanJinCOBRA Research Institute and Department of Applied Physics,
Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands,
e-mail: [email protected]
Hyeson Jung Electrical and Computer Engineering Department, University of
Illinois at Chicago (UIC), 851 S. Morgan Street, Chicago, IL 60607, USA
Bryan Kelleher Centre for Advanced Photonics and Process Analysis, Cork
Institute of Technology and Tyndall National Institute, Lee Maltings, Dyke
Parade, Cork, Ireland, e-mail: [email protected]