Application Note QFE3320 ET v2.0 Load-Pull Data 80-NJ121-121 Rev. B Confidential and Proprietary –Qualcomm Technologies, Inc. Restricted Distribution: Not to be distributed to anyone who is not an employee of either Qualcomm or its subsidiaries without the express approval of Qualcomm’s Configuration Management. Confidential and Proprietary –Qualcomm Technologies, Inc. NO PUBLIC DISCLOSURE PERMITTED: Please report postings of this document on public servers or websites to: [email protected]. Restricted Distribution: Not to be distributed to anyone who is not an employee of either Qualcomm or its subsidiaries without the express approval ofQualcomm’s Configuration Management. Not to be used, copied, reproduced, or modified in whole or in part, nor its contents revealed in any manner to others without the express written permission of Qualcomm Technologies, Inc. Qualcomm is a trademark of QUALCOMM Incorporated, registered in the United States and other countries. All QUALCOMM Incorporatedtrademarks are used with permission. Other product and brand names may be trademarks or registered trademarks of their respective owners. This technical data may be subject to U.S. and international export, re-export, or transfer (“export”) laws. Diversion contrary to U.S. and international law is strictly prohibited. Qualcomm Technologies, Inc. 5775 Morehouse Drive San Diego, CA 92121 U.S.A. © 2014 Qualcomm Technologies, Inc. Confidential and Proprietary –Qualcomm Technologies, Inc. | MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION | 80-NJ121-121 Rev. B 2 Revision History Revision Date Description A May 2014 Initial release B October 2014 Changed thedocument title from QFE3320 LB and MB PA Load-Pull Data to QFE3320 ET v2.0 Load-Pull Data Replaced slides 5–60 with slides 5–174 toreflect current load-pull data Confidential and Proprietary –Qualcomm Technologies, Inc. | MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION | 80-NJ121-121 Rev. B 3 Contents 1 Notes 5 2 Band 1 – Load-Pull Data 8 3 Band 2/25 – Load-Pull Data 18 4 Band 3/4 – Load-Pull Data 28 5 Band BC6 – Load-Pull Data 39 6 Band BC1 – Load-Pull Data 47 7 Band BC15 – Load-Pull Data 55 8 Band B34 TDS EPT– Load-Pull Data 63 9 Band B39 TDS EPT– Load-Pull Data 72 10 Band B23 – Load-Pull Data 81 11 Band 5/26 – Load-Pull Data 91 12 Band 8 – Load-Pull Data 102 13 Band 12/17 – Load-Pull Data 113 14 Band 20 – Load-Pull Data 124 15 Band 28A – Load-Pull Data 134 16 Band 28B – Load-Pull Data 145 17 Band BC0 – Load-Pull Data 156 18 Band BC10 – Load-Pull Data 165 Confidential and Proprietary –Qualcomm Technologies, Inc. | MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION | 80-NJ121-121 Rev. B 4 Section 1 Notes Confidential and Proprietary –Qualcomm Technologies, Inc. | MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION | 80-NJ121-121 Rev. B 5 Summary of Load Impedance Conditions (MB) VSWR Mode Band Gain state Waveform magnitude VSWR angle Real Imaginary ET B1 G0 LTE10-50RB 1.4 180 35.71 0 ET B2/25 G0 LTE10-50RB 1.4 180 35.71 0 ET B3/4 G0 LTE10-50RB 2 160 25.58 6.56 ET BC6 G0 C2K 1.4 180 35.71 0 ET BC1 G0 C2K 1.4 180 35.71 0 ET BC15 G0 C2K 2 160 25.58 6.56 EPT B34 G0 TDSCDMA 1.7 120 35.16 16.93 EPT B39 G0 TDSCDMA 1.5 150 34.62 7.21 ET B23 G0 LTE10-50RB 1.2 200 42.06 -2.64 Sec. 1 Confidential and Proprietary –Qualcomm Technologies, Inc. | MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION | 80-NJ121-121 Rev. B 6 Summary of Load Impedance Conditions (LB) VSWR Mode Band Gain state Waveform magnitude VSWR angle Real Imaginary ET B5/26 G0 LTE10-50RB 1.5 170 33.47 2.42 ET B8 G0 LTE10-50RB 1.5 150 36.42 7.21 ET B12/17 G0 LTE10-50RB 1.5 200 33.9 -4.83 ET B20 G0 LTE20-100RB 1.5 170 33.47 2.42 ET B28A G0 LTE20-100RB 1.5 200 33.9 -4.83 ET B28B G0 LTE20-100RB 1.5 200 33.9 -4.83 ET BC0 G0 C2K 1.5 170 33.47 2.42 ET BC10 G0 C2K 1.5 170 33.47 2.42 Sec. 1 Confidential and Proprietary –Qualcomm Technologies, Inc. | MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION | 80-NJ121-121 Rev. B 7 Section 2 Band 1 – Load-Pull Data Confidential and Proprietary –Qualcomm Technologies, Inc. | MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION | 80-NJ121-121 Rev. B 8 LTE10 50 RB B1 ET 0.9–3.8 V – MPR1 (1 of 9) LTE10 B1 ET-3.8V Vbatt-3.8V P =0dBm | PAE(%)(blue) / Delivered Power (red) (dBm) 50RB 1950MHz in 2.0:1 0.3 jj1166..77ΩΩ 26.8 0.2 jj1100..00ΩΩ 33321.351 30.532092.2567.299128..552:8127.52726.522662.75.5262.56242.56.25426.4 2. 8 5 -00..101 jjjj-4-444..2255..5555ΩΩ..ΩΩ0026.ΩΩ7263433.22436.2726..59273327..1527.127.23355..37732ΩΩ2773..222.45 12 .73312.15.28314<231072.25557.8713..0200102..9.50029ΩΩ28.52827.2572267.926.265.8262256..5275226.4.652264.77526.0042233.5..0026.ΩΩ322.256.22226.211.526219.622550..95925.82025.25.57 110000..00ΩΩ .8 33 6.8 215.1 2 --00..32 jj--1100..00jj--ΩΩ1166..77ΩΩ26.932 31.350.353102922.985.2528277.257226.2656.2227652.6.259.5266.42.25654.423223.6.52236.22.22652.12216.2251252.05.9.582025.7 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 Sec. 2 Confidential and Proprietary –Qualcomm Technologies, Inc. | MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION | 80-NJ121-121 Rev. B 9 LTE10 50 RB B1 ET 0.9–3.8 V – MPR1 (2 of 9) LTE10 B1 ET-3.8V Vbatt-3.8V P =0dBm | Ibatt (mA) 50RB 1950MHz in 2.0:1 0.3 j16.7Ω 0 0 42 43 0 0 0 0 0 44 45 46 47 48 1.5:1 0.2 j10.0Ω 0 70 380 0.1 j4.5Ω0 3394000 6 1 3 4 0 0 25.0Ω 35.7Ω420 4301.1408<501586000.0Ω70 80 4790.0Ω 100.0Ω 44 4 4 4 j-4.5Ω -0.1 0 70 380 390 30 j-10.0Ω 40 1 -0.2 4 4 00 9 424300 04 4 0 45 67 8 -0.3 j-16.7Ω 44 40 0 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 Sec. 2 Confidential and Proprietary –Qualcomm Technologies, Inc. | MAY CONTAIN U.S. AND INTERNATIONAL EXPORT CONTROLLED INFORMATION | 80-NJ121-121 Rev. B 10