Properties of Lithium Niobate (Emis Datareviews Series, 28) PDF
Preview Properties of Lithium Niobate (Emis Datareviews Series, 28)
P R O P E R T I ES OF L i t h i um N i o b a te E d i t ed by K. K. W O NG N o r t h s t ar P h o t o n i c s, I n c ., U SA IEE I N S P EC Published by: INSPEC, The Institution of Electrical Engineers, London, United Kingdom © 2002: The Institution of Electrical Engineers This publication is copyright under the Berne Convention and the Universal Copyright Convention. All rights reserved. Apart from any fair dealing for the purposes of research or private study, or criticism or review, as permitted under the Copyright, Designs and Patents Act, 1988, this publication may be reproduced, stored or transmitted, in any forms or by any means, only with the prior permission in writing of the publishers, or in the case of reprographic reproduction in accordance with the terms of licences issued by the Copyright Licensing Agency. Inquiries concerning reproduction outside those terms should be sent to the publishers at the undermentioned address: The Institution of Electrical Engineers, Michael Faraday House, Six Hills Way, Stevenage, Herts. SG1 2AY, United Kingdom While the authors and the publishers believe that the information and guidance given in this work are correct, all parties must rely upon their own skill and judgment when making use of them. Neither the authors nor the publishers assume any liability to anyone for any loss or damage caused by any error or omission in the work, whether such error or omission is the result of negligence or any other cause. Any and all such liability is disclaimed. The moral right of the authors to be identified as authors of this work has been asserted by him/her in accordance with the Copyright, Designs and Patents Act 1988. British Library Cataloguing in Publication Data A CIP catalogue record for this book is available from the British Library ISBN 0 85296 799 3 Printed in England by Short Run Press Ltd., Exeter Introduction The growth of lithium niobate boules in the late 1960s has resulted in the use of the material in realising signal processing chips for televisions and video cassette recorders. Since then, tremendous progress has been made in the growth of high quality optical grade lithium niobate material by a very small number of crystal growth centres. With this advancement in material quality, high performance integrated optical devices have been demonstrated. Waveguide devices such as high speed optical modulators (OC-48 and OC-192) have been extensively deployed in today's advanced long distance dense wavelength division multiplex (DWDM) telecommunication systems by various telecommunication companies around the world. The use of such high speed optical modulators are currently being deployed in metro DWDM systems. Another important use of this material is in commercial and military navigation systems where the heart of the system comprises an integrated optical signal processing chip, usually called the gyro chip. Other uses of lithium niobate in optical dispersion compensators, optical wavelength converters and optical parametric amplifiers employing periodically poled lithium niobate proton exchanged waveguides are being engineered in a number of companies. Since the previous EMIS book on LiNbO in 1989, an enormous amount of development and 3 manufacturing has been carried out with the benefit of improved material quality. For example, since 1989 over 6,500 research papers on lithium niobate have been published. This new book incorporates and builds on the information in the old book and highlights these new developments. In addition, the format of presentation has also been improved to allow the reader easier access to knowledge of the various properties. The editor would like to express his sincere thanks to all contributing authors for their time and effort in preparing the various Datareviews. In addition he would like to express his sincere thanks to the Managing Editor of EMIS (Electronic Materials Information Service) for his constant help, encouragement and patience throughout the preparation of this book. Finally, I would like to thank God for giving the scientific community such wonderful insights into His creation by quoting the first three lines of Psalm 19 from the Holy Bible: The heavens declare the glory of God; and the firmament sheweth his handywork. Day unto day uttereth speech, and night unto night sheweth knowledge. There is no speech nor language, where their voice is not heard. K.K. Wong July 2002 Contributing Authors F. Agullo-Lopez 1.4 Universidad Autonoma de Madrid Ciudad Universitaria Canto Blanco 28049 Madrid Spain J.A. Aust1 13.1 National Institute of Standards and Technology 325 Broadway Boulder CO 80305 USA F. Caccavale 8.10,12.1-12.3,13.2-13.4 SAES GETTERS, SPA Group Headquarters Viale Italia, 77 20020 Lainate (MI) Italy D. Ciplys 10.5 Moscow Institute of Electronic Technology Department of Chemistry Zelenograd Moscow 103498 Russia D. Craig 5.1-5.4,10.1-10.4 CIENA Communications, Inc. 920 Elkridge Landing Road Linthicum MD 21090 USA T. Fang 11.2 Crystal Technology, Inc. 1040 East Meadow Circle Palo Alto CA 94303 USA V.A. Fedorov 3.1,3.2,8.6-8.9,10.5 Moscow Institute of Electronic Technology Department of Chemistry Zelenograd Moscow 103498 Russia 1 Current address is: JA. Aust, Research Electro-Optics, Inc., 1855 S. 57th Street, Boulder, CO 80301, USA C. Florea Ll 4.1 - 4.4 6.I 7.2 7J 8.2 SA 9.6 9.7 11.4 -11.6 9 9 9 9 9 9 9 9 9 Northstar Photonics, Inc. 6464 Sycamore Court Maple Grove MN 55369 USA G. Foulon 1.2, 2.1 Crystal Technology, Inc. 1040 East Meadow Circle Palo Alto CA 94303 USA J. Garcia Sole 1.4 Universidad Autonoma de Madrid Ciudad Universitaria Canto Blanco 28049 Madrid Spain C. Geosling 13.5 Northrup Grumman 5500 Canoga Avenue Woodland Hills CA 91367 USA K.A. Green 8.3 9.1 - 9.3 9.5 11.3 9 9 9 Northrup Grumman, L5100 600 Hicks Road Rolling Meadows IL 60008 USA V. Hinkov 10.6 10.7 15.3 9 9 Fraunhofer Institut fur Physikalische Messtechnik Heidenhofstrasse 8 D-79110 Freiburg Germany D. Jundt 1.2, 2.I 8.I ILl 11.2 9 9 9 Crystal Technology, Inc. 1040 East Meadow Circle Palo Alto CA 94303 USA Yu.N. Korkishko 3.1,3.2,8.6-8.9,10.5 Moscow Institute of Electronic Technology Department of Chemistry Zelenograd Moscow 103498 Russia S.M. Kostritskii 8.8, 8.9 Moscow Institute of Electronic Technology Department of Chemistry Zelenograd Moscow 103498 Russia F. Laurell 8.7 Royal Institute of Technology (KTH) Department of Physics SE-16440Kista Stockholm Sweden I. Mnushkina 2.3 Deltronic Crystal Industries, Inc. 60 Harding Avenue Dover NJ07801 USA R. Rimeika 10.5 Moscow Institute of Electronic Technology Department of Chemistry Zelenograd Moscow 103498 Russia K.H. Ringhofer 14.2,14.3 University of Osnabruck Department of Physics PO 4469 D-4500 Osnabruck Germany C. Sada 12.2,13.3,13.4 University of Padova INFM and Physics Department Via Marzolo 8 35131 Padova Italy N.A. Sanford 13.1 National Institute of Standards and Technology 325 Broadway Boulder CO 80305 USA F. Segato 12.1 -12.3,13.3,13.4 Telsay Telecommunications via delPIndustria 131055 Quinto di Treviso Italy E.W. Taylor 14.1 International Photonics Consultants, Inc. 30TierraMonteNE Albuquerque NM 87122 USA K.K. Wong 8.5,15.1,15.2 Northstar Photonics, Inc. 6464 Sycamore Court Maple Grove MN 55369 USA In producing the present volume Datareviews by the following authors of the previous EMIS book dealing with lithium niobate, Properties of Lithium Niobate (INSPEC, 1989), were updated, adapted, merged or reproduced: M.N. Armenise, A. Ballato, J.C. Brice, Y. Cho, I. Foldvari, E. Fries, L.E. Halliburton, L.I. Ivleva, T. Kanata, C.J.G. Kirkby, L. Kovacs, K. Kubota, S.H. Lee, M.F. Lewis, T.H. Lin, S. Matsumura, D.P. Morgan, R.C. Peach, A. Peter, CW. Pitt, K. Polgar, N.M. Polozkov, G.T. Reed, J.F. Scott, D. Taylor, I. Tomeno, P.D. Townsend, R.S. Weis, B.L. Weiss, CL. West, K. Yamanouchi. Abbreviations AAS atomic absorption spectroscopy ABPM active-beam propagation method AC alternating current ADC automatic diameter control ADI alternated direction implicit AES Auger electron spectroscopy AFM atomic force microscopy AO acousto-optic APE annealed proton-exchanged ASE amplified spontaneous emission ATR attenuated total reflection BA benzoic acid BPM beam propagation method CLN congruent lithium niobate CPU central processing unit CRSS critical resolved shear stress CW continuous wave CZ Czochralski DC direct current DCXRD double-crystal X-ray diffractometry DI deionised DIC differential interference contrast DMPE dilute melt proton exchange DTA differential thermal analysis EFG edge-defined film-fed grown ENDOR electron nuclear double resonance EPR electron paramagnetic resonance ERDA elastic recoil detection analysis ESR electron spin resonance EXAFS extended X-ray absorption fine structure FED free electroacoustic decay FTIR Fourier transform infrared FWHM full width at half maximum GPE graded proton exchange HT high temperature HTPE high-temperature proton exchange ICP inductively coupled plasma ICP-AES inductively coupled plasma atomic emission spectroscopy ID identification (of wafers) IDT interdigital transducer IL insertion loss IR infrared IWKB inversion of Wentzel-Kramer-Brillouin (approximation technique) LB lithium benzoate LE lateral excitation LN lithium niobate LNO lithium niobate LO longitudinal optical LPE liquid phase epitaxy LSAW leaky surface acoustic wave LT low temperature MBE molecular beam epitaxy MP melting point MPE melt-phase epitaxy NF near field NLO non-linear optics NMR nuclear magnetic resonance NRA nuclear reaction analysis NS non-stoichiometry NSSL non-synchronous scattering loss OPO optical parametric oscillator PA pyrophosphoric acid PAC perturbed angular correlation PE proton-exchange(d) PI proportional integral PID proportional integral derivative PIXE particle induced X-ray emission PL photoluminescence spectra PLD pulsed laser deposition PPLN periodically poled lithium niobate PRD photorefractive damage PRS photorefractive sensitivity PRW photorefractive waveguide QE quasi-extensional QL quasi-longitudinal QPM quasi-phase-matched QS quasi-shear RAC reflective array compressor RBS Rutherford backscattering spectrometry RE rare earth RF radio frequency RHEED reflection high energy electron diffraction RIBE reactive ion beam etching RIE reactive ion etching RPE reverse proton-exchange RSF relative sensitivity factor RSI rear-shear interferometer RT room temperature SAW surface acoustic wave SEM scanning electron microscopy SH second harmonic SHG second harmonic generation SIMS secondary ion mass spectrometry SLN stoichiometric lithium niobate SNR signal-to-noise ratio SPE soft proton exchange STM scanning tunnelling microscopy SVEA slowly varying envelope approximation TCF temperature coefficient of frequency TDPAC time dependent perturbed angular correlations) TE thickness excitation TE transverse electric TI titanium indiffusion TIPE titanium indiffused proton exchanged TM temperature of melting TM transition metal TM transverse magnetic TO transverse optical TOF time-of-flight UHF ultra-high frequency UV ultraviolet VUV vacuum ultraviolet WKB Wentzel-Kramer-Brillouin (approximation technique) XRD X-ray diffraction XSW X-ray standing waves
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