Progress in Crystal Growth and Characterization of Materials 1991: Vol 22 Index

5 Pages·1991·1 MB·English

SUBJECT INDEX
Adducts, intramolecular 11 Defect densities 69
Alkoxides 186 Defect network 97
Aluminium carbide 3 Deformations 213, 231
Aluminium gallium arsenate 3 Diamond 270, 373
Annealing 83 Diamond films 373
high temperature 193 Diatomic differential, modified neglect 30
post growth 103 Diethyl arsine 5
thermal 294 8-Diketonates 187
Anti phase domains 63, 78 Dimethyl-aminopropyl gallium cyclohexane 11
Antistokes process 253 Dimethylmethoxy aluminium 10
Arsenic sources, toxicity 8 Diodes
Arsenic subhydrides 7 laser 99, 115
Arsine by electrolysis 9 light emitting 98
Atomic layer epitaxy (ALE) 96 Dipole moment 20
Dislocation reconfiguration 82
Donor contamination 4
Bandgap 61 Doping profiles 96
Bennet—Tolksdorf seeding 147 Dye molecules 249
Boltzman constant 27
Brewster-angle incidence 250
Bridgman-Stockbarger method of crystal
Ekman layer flow 152
growth 36
Electron mobility 5
Brillouin zone 265
Electrostatic binding 116
erate fracture 209 Epitaxial lift-off 116
Epitaxy
; a atomic layer (ALE) 96
Calcium lanthanum sulphide 226 liquid phase (LPE) 97, 150, 153
Cathodoluminescence 75 metal organic molecular beam (MOMBE) 5, 96
Centrosymmetry 20 metal organic vapour phase (MOVPE) 1, 58,
Ceramics 199 77. %
Chalocogenides 321 migration enhanced (MEE) 97
Coherent antistokes Raman spectroscopy 7 Etching
Congruent evaporation 10 anisotropic 70
Coordinate saturation 10 defect selective 70
Couette flow 152 Etch pits 69. 206
Crack banks =2 00 Etch profile 64
Crack growth, UV-irradiation 208 Ethyl dimethyl indium 3
Crossed polarization 256 Evaporative decomposition 328
Crucible rotation 151 Excitons 250
Crystallization 152
Crystals
ferroelectric 199
growth 35 Fermi-energy 253
Bridgman-Stockbarger 36 Ferroelastic boundaries 205
Czochralski method 37 Ferroelectric hardness 205
Ferroelectric oxides 183
from solution 40
Field effect transistor, metal semiconductor 114
Kyropoulos method 40
Flexural strength 336
planar 94
6 Forced flow 173
procedure
Forced stirring 155
slow cooling 41
Fracture theory 199
solvent evaporation 42
Fracture toughness 216
temperature difference 43
Furnace, horizontal 35
lattice matching 53
parasitic 159
preparing thin specimens 44
quality 68 Gradient sublimation 32
symmetry 20) Graphite 270
Czochralski growth 37 Group V novel precursors 4
vi Subject Index
Growth kinetics 173 Material quality 106
Growth, physical vapour transport 35 Maxwell interaction 203
Growth rate evaluation 174 MBE 9, 58, 77, 274, 301
Growth techniques 96 modulated 97
McRae equation 26
Metal organic chemical vapour deposition
Heat seeking devices 322 (MOCVD) 183
Heptafluorooctandione 188 Metal organic molecular beam epitaxy
Heshin model 217 (MOMBE) 5, 96
Heteroepitaxial growth 75, 101 Metal organic vapour phase epitaxy (MOVPE) 1,
Hydrocarbons, volatile stable 4 58, 77
plasma enhanced 96
precursors for III-V_ 1
Impurity detection 33 safety considerations |
Incident photon energy 247, 290 Methane, C!3 enriched 5
Incongruent evaporation 10 Microcracks 56, 91, 205
Indenter penetration 233 Microemulsion technique 343
Indium phosphide 9 Microtwins 97
Infrared materials 323 Microwave discharge 9
Integrated circuits 100 Migration enhanced epitaxy 97
Intercrystallite layer 222 Minority carrier lifetime 96
Interfacial processes 173 Misfit strain 82
Intermolecular adducts 11 Mismatch thermal expansion 81
Internal electrical fields 230 Modulation efficiency 116
Isobutyl phosphine 9 Modulators 99
Isostatic pressing 328 Molecular polarizability, calculation 29
Monoethyl arsine 7
Monolithic integration 60
Kanzig region 225 Monomethyl gallium 5
KOH etching 69 Monophenyl arsine 6
, Kurtz powder technique 21
Kyropoulos method of crystal growth 40
Native oxide removal 77
Nitroaniline 28
Landau levels 260 Nonlinear optical devices 19
Lanthanum sulphide, allotropes 337 Nonlinear properties, estimation 28
Laser
colour centre 249
diodes 99, 115 Optical devices, nonlinear 19
Ti/sapphire 249 Optoelectronic integrated circuits 56, 115
Lattice mismatch 66, 84 Organo arsenic hydrides 9
Lattice, optical quality 19 Ostwald—Miers region 144
Lead-t-butoxide 187 Oxide desorption 111
Lead scandium tantalate 186, 191
Lead titanate 184
Le Chatelier—-Schroder equation 168 Parasitic crystals 159
Light emitting diodes 56 Parasitic doping 94
Linear elastic mechanics 200 Perovskite 193
Linear piezoeffect 200 Phonons 250
Linear polarizability 30 folded acoustic 272
Linear thermal expansion 62 scattering 262
Liquid phase epitaxy (LPE) 97, 150, 153 Phosphine 9
Liquidus curves, calculation 167 Photoneutralization 304
Lithium niobate 19 Photonic integrated circuits 118
Localized cooling 147 Physical vapour transport 35
Localized vibrational modes 252, 290 Piezoceramics 239
Low temperature nucleation layer 101 Piezoeffect, linear 200
Piezoreflectance 258
Planar growth 94
Magneto plumbite 159 Planck constant 27
Magnons 250 Plasmons 253
Mass transport 173 Plastic deformation 213
Material optimization 109, 111 Plasticity zone 225
Material parameters 59 Poisson's coefficient 225
Subject Index Vii
Polarization, crossed 256 Sulfidization 354
Polarizability, solvatochromic method 26 Superlattices, strained layer 83
Polarons 250
Polycrystalline film 62
Post-growth annealing 103 Tensile dilatation 223
Precursor optimization 76 Tensile stresses 84
Precursor purification 30 Ternary sulphides 224
Precursor side reactions 8 Tertiary butyl arsine 5
Pseudobinary phase diagram 166 Tetraethyl diarsine 6
Pseudoternary phase diagram 165 Tetraethyl lead 187
Purification of precursors 31 Thermal annealing 84
Purification, zone refining 30 Thermal cycling 85, 104
Pyridinium-N-phenoxide dyes 26 Thermal dissociation 3
Pyrolysis, water vapour 191 Thermal expansion 65
coefficient 217
Thermal strain 82
Quantum mechanical calculations 27 Thermal stresses 65
Quantum wells 95 Threshold current 99
multiple 253 Transistors 97
Quasi-particle excitations 250 Transmission electron microscopy 72
Triethyl arsenic 5
Triethyl gallium 4
Raman effect, order of magnitude 247 Triethyl indium 3
Raman scattering Triisobutyl aluminium 11
electronic excitations 302 Triisobutyl gallium 11
localized vibrational modes 290 Trimethyl aluminium 3, 10
resonant 252 Trimethyl arsenic 4
Raman spectroscopy 245 Trimethyl gallium diisopropyl amine adduct 11
coherent antistokes 7 Trimethyl indium 2, 3
Rayleigh scattering 249
Resonance 257
Rutherford back scattering 72 UV-irradiation, crack growth 208
Safety regulations 4 Vickers indenter 201, 213
Sapphire 184, 268
Saturation
coordinate 10 Waferbowing 65
intramolecular 11 Wafers 103
Second harmonic generation 23 Waveguides 99, 115
Selective growth 90 Wet etching 69
322
microcrack induction 91 Wiens displacement law
—
Shear modulus 225 Window materials 323
Single crystals, growth 143 Wright etching 69
Solar cells 99, 115
Solubility models 171
Solvent evaporation 144
X-ray diffraction 71
Spectroscopy
coherent antistokes Raman 7
Raman 245
Young’s modulus 224
Spiral shearing 151
Stark ladder 260
Strained layer superlattices 83
Sublimation gradient 32 Zone refining 30
COMPOUND INDEX
ALC, 3
GaCH, 5
AI(CH;); 3, 10
Ga(C,H;); 11
AK(C,H;); 11
AlGaAs 3
As(CH;); 4
In(CH;),; 2,3
As(C,Hs); 5 In(C,Hs); 3
AsH(C>Hs)> 5
InP 9
AsH,(C,Ho) 5
LiNbO, 19
(CH;),AlIOCH, PH, 9
(C,Hs),As,H(sC) ,
C,H;AsH, 6 Pb(C3H;),; 187
C,H;In(CH;), 3 Pb,ScTaO, 186
CaLa,S, 326 PbTiO; 184