Power Microelectronics: Device and Process Technologies

608 Pages·2017·18.775 MB·English

by  Yung Chii Liang, Ganesh S Samudra, Chih-Fang Huang

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Published by
World Scientific Publishing Co. Pte. Ltd.
5 Toh Tuck Link, Singapore 596224
USA office: 27 Warren Street, Suite 401-402, Hackensack, NJ 07601
UK office: 57 Shelton Street, Covent Garden, London WC2H 9HE
Library of Congress Cataloging-in-Publication Data
Names: Liang, Yung C., author. | Samudra, Ganesh S., author. | Huang, Chih-Fang, author.
Title: Power microelectronics : device and process technologies / by Yung C Liang
(NUS, Singapore), Ganesh S Samudra (NUS, Singapore), Chih-Fang Huang
(National Tsing-Hua University, Taiwan).
Description: 2nd edition. | [Hackensack?] New Jersey : World Scientific, [2016] |
Includes bibliographical references and index.
Identifiers: LCCN 2016046914 | ISBN 9789813200241 (hc : alk. paper)
Subjects: LCSH: Power semiconductors. | Power electronics. | Microelectronics.
Classification: LCC TK7871.85 .L5425 2016 | DDC 621.3815/2--dc23
LC record available at https://lccn.loc.gov/2016046914
British Library Cataloguing-in-Publication Data
A catalogue record for this book is available from the British Library.
Copyright © 2017 by World Scientific Publishing Co. Pte. Ltd.
All rights reserved. This book, or parts thereof, may not be reproduced in any form or by any means,
electronic or mechanical, including photocopying, recording or any information storage and retrieval
system now known or to be invented, without written permission from the publisher.
For photocopying of material in this volume, please pay a copying fee through the Copyright Clearance
Center, Inc., 222 Rosewood Drive, Danvers, MA 01923, USA. In this case permission to photocopy
is not required from the publisher.
Desk Editor: Herbert Moses
Typeset by Stallion Press
Email: [email protected]
Printed in Singapore
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A
CKNOWLEDGEMENT
Wewouldalsoliketothankmanypeoplewhohavehelpeduswiththisbook,
especially Professor Simon Ang at University of Arkansas for providing his
lecturenotesonbipolarpowerdiodesasavaluablereferenceforthisbook;also
Mr.HonglinPan,Mr.JunyangLuo,Dr.XiaoluYuan,Mr.KianPaauGan,Mr.
Yuanzheng Zhu, Mr. Yong Liu, Ms. Changhong Ren, Mr. Andrew JD Lim,
Dr. Xin Yang, Ms. Hanmei Zhong, Dr. Yu Chen, Ms. Kavitha Buddharaju,
Dr.HuolinHuang,Mr.Jheng-YiJiang,Ms.Chia-HuiCheng,Mr.Tsung-Ying
Tsai,Mr.RuizeSunandMr.Yun-HsiangWangfortheirtechnicalcontribution
indesign,development,analysis,fabrication,testandmeasurementofvarious
powersemiconductordevicesandintegratedcircuits.
YungC.Liang
GaneshS.Samudra
Chih-FangHuang
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A A
BOUT THE UTHORS
YungC.LiangreceivedtheMScdegreefromNationalTsingHuaUniversity,
Taiwanin1985andthePhDdegreefromtheUniversityofSydney,Australiain
1991,bothinelectricalengineering.HeiscurrentlyanAssociateProfessorwith
theDepartmentofElectricalandComputerEngineering,NationalUniversity
of Singapore, Singapore. He was a visiting academic at the Japan Advanced
Institute of Science and Technology, Japan, in 1997 and at the University
of California, Berkeley in 2001–2002. His research interests include power
microelectronics,siliconsensorsandactuators,microfuelcellsandferroelectric
devices.Hehasauthoredmorethan190journalandconferencepublications
intheseareas.
Dr.LiangwasthekeyfoundingmemberoftheIEEEInternationalCon-
ference on Power Electronics and Drive Systems (IEEE PEDS) in 1995 and
therecipientoftheIEEEThirdMillenniumMedalin2000.Healsoreceived
the Transactions Paper Prize from the IEEE Power Electronics Society for
hisworkonhigh-frequencysmartpowersynchronousrectifiers.Hecurrently
servesasanAssociateEditorfortheIEEETransactionsonPowerElectronics.
Chih-Fang Huang is currently an Associate Professor in the Department
of Electrical and Engineering at National Tsing Hua University (NTHU),
Taiwan. He received his PhD from Purdue University, West Lafayette,
Indiana, USA in 2003. In 2004, he joined Advanced Power Technology
Colorado, Boulder, Colorado, where he engaged in the development of SiC
power and RF devices. Since 2005, he has been with NTHU. His current
research interests include wide bandgap semiconductors, RF and power
devices, and driver ICs for power devices. He is author/co-author of more
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viii PowerMicroelectronics
than 100journal/conference papers in these fields and is inventor of eight
U.S.patents.Heisatechnicalcommitteememberofseveralinternationalcon-
ferences,includingInternationalConferenceonSolidStateDevicesandMateri-
als(2013–2017),InternationalSymposiumonPowerSemiconductorDevicesand
ICs(2015–2017),andInternationalConferenceonSiliconCarbideandRelated
Materials(2017).HeisalsoanIEEESeniorMember.
Ganesh S. Samudra is currently an Associate Professor in Department of
Electrical and Computer Engineering in National University of Singapore.
He received his MSc from Indian Institute of Technology, Mumbai in 1976
andMSEEandPhDfromPurdueUniversity,USA,in1985.Hewasvisiting
professoratMITin2001.Hisresearchisinsimulationandnoveldevices.He
has published ∼300 technical papers in journals and conferences. His recent
research papers jointly with Profs. Liang and Huang are on methodologies
for the fabrication of normally-off GaN High Electron Mobility Transistors
(HEMTs)capableofoperatingathightemperatures.
He was co-recipient of the IEEE Electron Devices Society’s 2008 Paul
Rappaport Award and simulation and modeling subcommittee chairman of
InternationalElectronDeviceMeeting(IEDM)in2010.
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C
ONTENTS
Acknowledgement v
AbouttheAuthors vii
1 Introduction 1
2 CarrierPhysicsandJunctionElectrostatics 7
2.1 Introduction 7
2.2 CrystalStructureandEnergyBands 7
2.3 CarrierConcentrationandFermiLevel 14
2.3.1 IntrinsicSemiconductor 17
2.3.2 ExtrinsicSemiconductor 18
2.4 CarrierTransport 21
2.4.1 CarrierDrift 22
2.4.2 CarrierDiffusion 26
2.4.3 Resistivity 28
2.5 BandgapReduction 28
2.6 CarrierRecombination 31
2.6.1 CarrierLifetime 37
2.6.2 CarrierLifetimeControl 39
2.6.3 AugerRecombination 45
2.7 BasicEquationsinSemiconductor 48
2.8 p–nJunctionElectrostatics 50
ix