Plasma-Surface Interactions and Processing of Materials PDF
Preview Plasma-Surface Interactions and Processing of Materials
Plasma-Surface Interactions and Processing of Materials NATO ASI Series Advanced Science Institutes Series A Series presenting the results of activities sponsored by the NA TO Science Committee, which aims at the dissemination of advanced scientific and technological knowledge, with a view to strengthening links between scientific communities. The Series is published by an international board of publishers in conjunction with the NATO Scientific Affairs Division A Life Sciences Plenum Publishing Corporation B Physics London and New York C Mathematical Kluwer Academic Publishers and Physical Sciences Dordrecht, Boston and London D Behavioural and Social Sciences E Applied Sciences F Computer and Systems Sciences Springer-Verlag G Ecological Sciences Berlin, Heidelberg, New York, London, H Cell Biology Paris and Tokyo Series E: Applied Sciences -Vol. 176 Plasma-Surface Interactions and Processing of Materials edited by Orlando Auciello Microelectronics Center of North Carolina and North Carolina State University, Research Triangle Park, North Carolina, U.S.A. Alberto Gras-Marti Jose Antonia Valles-Abarca University of Alicante, Alicante, Spain and Daniel L. Flamm AT&T Bell Laboratories, Murray Hill, New Jersey, and University of California, Berkeley, U.S.A. Kluwer Academic Publishers Dordrecht / Boston / London Published in cooperation with NATO Scientific Affairs Division Proceedings of the NATO Advanced Study Institute on Plasma-Surface Interactions and Processing of Materials Alicante, Spain September 4-16, 1988 Library of Congress Cataloging in Publication Data NATO Advanced Study Institute on Plasma-Surface Interactions and Processing of Materials (1988 Alicante, Spain) Plasma-surface interactions and processing of materials proceedings of the NATO Advanced Study Institute on Plasma-Surface Interactions and Processing of Materials, Allcante, Spain, September 4-16, 1988 / edited by Orlando Auciello. p. cm. -- (NATO ASI series. Series E, Applied sciences; vol. 176) 1. Materials--Surfaces--Congresses. 2. Materials--Effect of radiation on--Congresses. 3. Microelectronics--Materials--Effect of radiation on--Congresses. 4. Plasma etching--Congresses. I. Auciello, Orlando. II. Title. III. Series, NATO ASI series. Series E, Applied sciences; no. 176. TA418.7.N36 1988 620' .44--dc20 89-48126 ISBN -13: 978-94-010-7369-1 e-ISBN-13: 978-94-009-1946-4 DOl: 10.1007/978-94-009-1946-4 Published by Kluwer Academic Publishers, P.O. Box 17, 3300 AA Dordrecht, The Netherlands. Kluwer Academic Publishers incorporates the publishing programmes of D. Reidel, Martinus Nijhoff, Dr W. Junk and MTP Press. Sold and distributed in the U.S.A. and Canada by Kluwer Academic Publishers, 101 Philip Drive, Norwell, MA 02061, U.S.A. In all other countries, sold and distributed by Kluwer Academic Publishers Group, P.O. Box 322, 3300 AH Dordrecht, The Netherlands. Printed on acid-free paper All Rights Reserved © 1990 by Kluwer Academic Publishers and copyright holders as specified on appro priate pages within Softcover reprint of the hardcove 1s t edition 1990 No part of the material protected by this copyright notice may be reproduced or utilized in any form or by any means, electronic or mechanical, including photo copying, recording or by any information storage and retrieval system, without written permission from the copyright owner. TABLE OF CONTENTS Preface ix Report on the NATO/ASI xi Acknowledgements xii BASIC PHYSICS OF PLASMASJDISCHARGES: PRODUCTION OF ACTIVE SPECIES A. Ricard PLASMA CHEMISTRY IN ETCHING D.L.Flamm 35 OPTICAL DIAGNOSTIC TECHNIQUES FOR LOW PRESSURE PLASMA PROCESS ING V. M. Donnelly 57 MEASURING EEDF IN GAS DISCHARGE PLASMAS V. A. Godyak 95 TRANSPORT PHENOMENA IN PLASMA PROCESSING A. Gras-Marti, J.-A. Valles-Abarca, and J.-C. Moreno-Marin 135 KINETICS OF A LOW-PRESSURE Hz MULTIPOLE DISCHARGE USED FOR GaAS TREATMENT J. Bretagne, D. Jacquin, and R. Ferdinand 147 Ar AND Ti EXCITED STATES IN THE VICINITY OF THE SUBSTRATE DURING MAGNETRON SPUTTERING OF Ti T. Pech and A. Ricard 151 MODELING OF THE PLASMA NITRIDING PROCESS J.L. Marchand, H. Michel, D. Ablitzer, M. Gantois, A. Ricard, and J. Szekely 155 PLASMA MEASUREMENTS IN A MAGNETRON SPUTTERING DEVICE J. B. Almeida, F. Guimareas, and M.M.D. Ramos 159 LASER INDUCED FLUORESCENCE MEASUREMENTS OF ION DISTRffiUTION FUNCTIONS J. Goree and M.J. Goeckner 163 LASER INDUCED FLUORESCENCE MEASUREMENTS IN PLASMA ETCHING PROCESSES J. P. Booth, G. Hancock, N. D. Perry, and M. L. Toogood 167 EFFECT OF MODULATION ON THE PLASMA DEPOSITION OF HYDROGENATED AND FLUORINATED SILICON NITRIDE G. Cicala, D. L. Flamm, D. E. Ibbotson, and J. A. Mucha 171 PARTIAL PRESSURE ANALYSIS OF CFJ Oz PLASMAS J. C. Martz, D. W. Hess, and W. E. Anderson 175 vi SURFACE CHARACTERIZATION OF CORONA DISCHARGE TREATED POLY (ETHYLENE TEREPHTHALATE) Y. De Puydt, P. Bertrand, Y. Novis, M. Chtaib, P. Lutgen, and G. Feyder 179 THE PHYSICS OF THE SPUTTER EROSION PROCESS H. M. Urbassek 185 BASIC PHENOMENA IN REACTIVE ETCHING OF MATERIALS o. Auciello 201 PARTICLE BOMBARDMENT EFFECTS IN THIN FILM DEPOSITION J. M. E. Harper 251 LOW-ENERGY ION/SURFACE INTERACTIONS DURING FILM GROWTH FROM THE VAPOR PHASE: EFFECTS ON NUCLEATION AND GROWTH KINETICS, DEFECT STRUCTURE, AND ELEMENTAL INCORPORATION PROBABILITIES J. E. Greene, S. A. Barnett, J.-E. Sundgren, and A. Rockett 281 LOW-ENERGY ACCELERATED-ION DOPING OF Si DURING MOLECULAR BEAM EPITAXY: INCORPORATION PROBABILITIES, DEPTH DISTRIBUTION, AND ELECTRICAL PROPERTIES L. C. Markert, J. Knall, J.-P. Noel, M.-A. Hasan, J. E. Greene, J.-E. Sundgren 313 IN SITU SUBSTRATE CHEMICAL ANALYSIS DURING SPUTTER DEPOSITION M. H.::cq and P. Legrand 317 REACTIVE ION BEAM ETCHING STUDIES OF TUNGSTEN WITH CF USING ION 4 SCATTERING SPECTROSCOPY T. I. Cox, V. G. I. Deshmukh, and D. G. Armour 319 ESTIMATION OF STRUCTURAL DAMAGE INDUCED BY TECHNOLOGICAL PROCESSES ON THE SURFACE OF CRYSTALLINE BINARY COMPOUNDS BY X RAY PHOTOELECTRON DIFFRACTION: APPLICATION TO REACTIVE ION ETCHING OF GaAs(OOI) SURFACES J. Olivier, P. Alnot, and R. Joubard 323 IN-SITU XPS STUDIES OF THIN SILICON NITRIDE FILMS ON Ill-V SEMICONDUC TORS PRODUCED BY REMOTE PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION R.N. S. Sodhi 327 COMPOSmONAL AND STRUCTURAL ANALYSIS OF RF SPUTTERED HYDROGENATED AMORPHOUS Si1'XGeXA LLOYS A. Patentalaki, M. Androulidaki, and G. Kiriakidis 331 THIN FILM INHOMOGENEITY CHARACTERIZATION BY ION BEAM TECHNIQUE N. E. Capuj, N. R. Arista, G. H. Lantchsner, J. C. Eckardt, and M. M. Jakes 335 vii THEORETICAL ANALYSIS OF THE INFLUENCE OF FOIL INHOMOGENEITIES ON THE ANGULAR VARIATION OF THE ENERGY- LOSS N. E. Capuj and M. M. Jakas 339 APPLICATIONS OF PLASMA ETCHING H. W. Lehmann 345 THE APPLICATION OF PLASMAS TO THIN FILM DEPOSTION PROCESSES D. M.Mattox 377 PLASMA-ENHANCED CVD OF SILICON-RELATED COMPOUNDS W. A. P. Claassen and G. M. J. Rutten 401 PLASMA-ASSISTED DEPOSITION OF POLYMERS R. d'Agostino 425 RBS, SIMS, AES AND ESCA ANALYSIS OF SURFACES D. G. Armour 457 THE PROCESS TRANSFER OF OXYGEN REACTIVE ION ETCHING OF POLY MIDE BETWEEN DIFFERENT ETCH EQUIPMENTS A. J. Hydes, T. I. Cox, D. A. O. Hope, and V. G. I. Deshmukh 499 REACTIVE ION ETCHING OF SILICON CONTAINING RESISTS M. A. Hartney, D. W. Hess, and D. S. Soane 503 SURFACE TREATMENT OF PP FILMS BY A NON EQUILIBRIUM LOW PRESSURE PLASMA OF NH3, N2, Ar V. Andre, F. Tchoubineh, F. Arefi, and J. Amouroux 507 ION BEAM AND PLASMA-INDUCED ETCHING IN STRUCTURING ELECTRONIC DEVICES K. Fischer and W. M(jh1 511 PLASMA INDUCED POLYMERIZATION F. Poncin-Epaillard, J. C. Brosse, J. Bretagne, and A. Ricard 515 TECHNOLOGICAL CONSIDERATIONS ON THIN FILMS PROCESS BASED ON NTa 2 M. Tudanca and F. Lopez 519 SURFACE MODIFICATION OF BIOMATERIALS WITH PLASMA GLOW DIS CHARGE PROCESSES E. Piskin, M. Kiremitci, V. Evren, M. Mutlu, A. Oncu, A. Denizli, A. Tuncel, A. I. Serbetc1i, and E. B. Denkbas 525 RUTHERFORD BACKSCATTERING AND NUCLEAR REACTION ANALYSIS STUDY OF PLASMA OXIDATION SILICIDES A. Climent, R. Perez-Casero, J. Perriere, J. P. Enard, and B. Lavemhe 531 viii RECENT MAGNETRON DESIGN AT MINHO UNIVERSITY - CHARACTERIZATION F. Guimaraes, J. Almeida, and R. Barral 535 A NOVEL MICROWAVE ION SOURCE AS A NEW TOOL FOR SUBMICRON ETCHING OF MICROELECTRONIC DEVICES W. Mohl and K. Fischer 539 LASER COATING OF ENGINEERING MATERIALS FOR INCREASED WEAR RESISTANCE M. B. Karamis and B. S. Yilbas 543 A TWO-STAND LABORATORY FACILITY FOR THE STUDY OF LASER SUP PORTED PLASMA-SURFACE INTERACTION G. Sliwinksi 547 EFFECTS OF A PARTIAL ORIENTATION OF Cu++ COMPLEXES IN YBaCup7_x 2 PELLETS A. Bonanno, M. Camarca, R. Bartucci, L. Sportelli, E. Colavita, S. Barbanera, and G. Balestrino 551 INDEX 555 PREFACE The study of plasma-material interactions has evolved into a dynamic and important field of research. An understanding of the basic physical and chemical processes involved in these interactions is vital to the evolution of microelectronics, fusion and space technologies, among others. In microelectronics, plasma-assisted etching and film formation are core technologies required to fabricate today' s large area, high density, very large scale integrated circuits (VLSI). By the same token, the understanding of plasma-surface interaction phenomena (e.g., physical sputtering, chemical etching, plasma-species trapping in solid walls) is crucial to the control of impurity introduction necessary to make self-sustained fusion reactors work. Finally, plasma interactions with the surface of spaceships may produce harmful effects, or even jeopardize the mission as demonstrated in recent flights of the Space Shuttle, where polymeric thermal blankets in the cargo bay were extensively degraded by etching in the low-earth orbit environment. The limited subject of plasma-surface interaction phenomena in fusion technology was treated in a previous NATO school (Canada, 1984). Surprisingly, despite the leading edge nature of this subject for key technologies, like microelectronics and those related to the space program, there has been no comprehensive treatment, or interdisciplinary approach to plasma-material interactions in a school such as an ASI. Additionally, the microelectronics and space technology communities have no prime international confer ence series on this subject. As a result, there has been a compartmentalization, with vari ous topics discussed at unrelated conferences, usually at national levels and only rarely at an international and interdisciplinary level. We, therefore, brought together a group of internationally respected lecturers to dis cuss the fundamental and applied aspects of plasma-surface interaction phenomena relevant to microelectronics, industrial coatings, and space technologies. Topics reviewed included: (a) basic processes occurring in low temperature plasmas [physics of plasma discharges, plasma chemistry], (b) transport and diagnostics processes [optical emission spectroscopy and probe diagnostics], (c) the interface of the plasmas with solid state and surface physics, i.e., physical sputtering, chemical etching, trapping of plasma species in solids exposed to them, and deposition processes. The physics and chemistry involved in the characterization of surfaces exposed to plasmas was also discussed. Esta blished analytical techniques (AES, SIMS, RBS, IR, Raman Spectroscopy, etc.) as well as new potentially powerful ones, like scanning tunneling microscopy were discussed in relation to their application to study the chemistry and morphology of surfaces at the atomic scale. Applications of plasma etching and film deposition to microcircuit fabrica tion were also discussed. With regards to the treatment of pure plasma phenomena, the subject of this ASI was complementary to a recent Conference on Plasma Physics held in Kiev (1987). ix x The interdisciplinary character of the subject of this NATO Advanced Study Insti tute can be best visualized by way of a four pointed star as depicted in the figure below. PHYSICS SURFACE MATERIALS ANALYSIS SCIENCE CHEMISTRY This figure represents the necessary interrelations between two basic sciences, i.e. physics, which involves the study of basic mechanisms in plasma-materials interaction and the associated solid state modifications, and chemistry, which deals with reactions and compositional changes of plasmas and solid surfaces exposed to them. The knowledge obtained via these two basic sciences is integrated with electrical and chemi cal engineering as a necessary step to plasma processing of materials for microelectron ics, coatings and space technologies. It was clear from the invited and contributed presentations that although a whole body of knowledge exists on the processes described above, there are still many outstand ing problems that need urgent attention. It is clear now that surfaces exposed to plasmas are simultaneously irradiated by energetic ions [inert and reactive], sub-eV species [inert and reactive], electrons, and photons. It has been demonstrated that the simultaneous impact of these species caused synergistic effects which greatly enhance etching processes, that are used for patterning microcircuits or other technological applications. At the same time these effects may be deleterious to materials exposed to fusion plasmas or plasmas in outer space. We feel that this NATO-ASI has ignited new ideas and colla boration among the attendees and we hope that an international conference series similar to that existing in the plasma-materials interaction fusion field will be organized in the near future. O. Auciello (Microelectronics Center of North Carolina and North Carolina State University, USA) A. Gras Marti (Universitat d'Alacant, Spain) J.A. Valles Abarca (Universitat d'Alacant, Spain) D.L. Flamm (AT&T Bell Laboratories and University of California, Berkeley, USA)
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