Physics of p-n Junctions and Semiconductor Devices

375 Pages·1971·55.251 MB·English

by  S. M. Ryvkin

PHYSICS OF p-n JUNCTIONS AND SEMICONDUCTOR DEVICES
FIZIKA ELEKTRONNO-DYROCHNYKH PEREKHODOV I POLUPROVODNIKOVYKH PRIBOROV
cDH3HKA 3AEKTPOHHO·,IlbIPO'lHbIX nEPEXO,llOB H nOAynpOBO,/lHHKOBblX nPHIiOPOB
PHYSICS OF p-n JUNCTIONS
AND SEMICONDUCTOR DEVICES
Edited by
s. v.
M. Ryvkin and Yu. Shmartsev
A, F, Ioffe Physicotechnical Institute
Academy of Sciences of the U SSR
Leningrad. USSR
Translated from Russian by
Albin Tybulewicz
Editor. Soviet Physics - Semiconductors
®
Springer Science+Business Media, LLC • 1971
The original Russian text, published by Nauka Press in Leningrad in 1969
for the A. F. loffe Physicotechnical Institute of the Academy of Sciences of
the USSR, has been corrected by the editors for the present edition. The
English translation is published under an agreement with Mezhdunarodnaya
Kniga, the Soviet book export agency.
<l>n:ml\a a.1IeKTpOHHO-~blP0'lHbIX nel)exo~oB
II no.'IynpoBo~HnRoBblx npn6opoB
Library of Congress Catalog Card Number 72-128510
ISBN 978-1-4757-1234-6 ISBN 978-1-4757-1232-2 (eBook)
DOI 10.1007/978-1-4757-1232-2
© 1971 Springer Science+Business Media New York
Originally published by Consultants Bureau, New York in 1971.
AII rights reserved
No part of this publication may be reproduced in any
form without written permission from the publisher
CONTENTS
Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures
at High Injection Levels. . • . . . • • • • • • • • • • • • • . . • . . . . • • • • • • • • 1
D. A. Aronov and Ya. P. Kotov
Static Current-Voltage Characteristic of a p-n-p-n Structure in the On State. . . . . 8
A. A. Lebedev
Distribution of the Intensity of Recombination Radiation and of the Voltage Drop in
Diffused p-n Junctions in Gallium Arsenide. . • • . . . . . . • . . . • • . . . • . 11
V. G. Voronin, A. V. Petukhov, 1. V. Ryzhikov, and V. F. Titova
Low-Energy Recombination Radiation of p -n Junctions in GaAs . • . . • . . • • . . . . • • 16
V. M. Lomako, V. D. Tkachev, and D. S. Domanevskii
Electroluminescence and Cathodoluminescence of p-n Junctions in GaAs . • • . . . . . • 18
V. M. Lomako, D. S. Domanevskii, and V. D. Tkachev
Film Devices Prepared by the Ion Bombardment Method . • • • • . . • • • . . • • • . . . . • 23
G. A. Kachurin, A. E. Gorodetskii, V. M. Zelevinskaya, and L. S. Smirnov
Kinetics of the Establishment of the Current in Polycrystalline Films of PbS 26
V. G. Butkevich and I. A. Drozd
Investigation of the Time Constants of an Indium Arsenide Laser 29
V. B. Buher, V. V. Nikitin, and K. P. Fedoseev
Transient Processes in Semiconductor Injection Lasers with Strong Optical Coupling . 32
V. A. Grekhnev, V. D. Kurnosov, A. A. Pleshkov, O. N. Prozorov,
L. A. Rivlin, A. T. Semenov, V. V. Tsvetkov, and V. S. Shil!dyaev
Possibility of Pair Correlation of Electrons and Holes in a Sandwich Consisting of n-
and p-Type Semiconductor Films. • . . • • • . • • . • . . • . • . • . . . . • • . • • 39
V. G. Kogan and B. A. Tavger
Theory of the Electroacoustic Interaction at a Metal-Semiconductor Point Contact. . . 46
E. G. Melikyan
Investigation of the Field in a Tunnel Diode with a Heterojunction 51
S. N. Dobrynin
Irreversible Changes in the Properties of an Injection Laser at High Excitation Levels 60
Yu. I. Kruz hil in
v
vi CONTENTS
Electrical Properties of Diffused p-n Junctions in Indium Arsenide .••••••••••• 65
Yu. D. Mozzhorin and V. 1. Stafeev
Parameters of the Active Region in an Injection Laser. • . • • • • • • • • • • • • • • • • • . • 71
Yu. I. Kruz hilin
Minimum Threshold Current for an Injection Laser and Its Relationship with the Gain
Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Yu. I. Kruzhilin
Special Features of Exposure-llluminance Characteristics of the Photopolarization of
HgI Single Crystals. • • . • • • • • • • . • . • • • . • • • • . • • • • • • • . • • • • • • 78
2
V. F. Zolotarev, D. G. Semak, and D. V. Chepur
Alloyed p-n Junctions Made of Be-doped p-Type SiC. . . • . . . • • . . . . . • . . . • • • • • 84
A. A. Kal'nin, V. V. Pasynkov, Yu. M. Tairov, and D. A. Yas'kov
Modulation of 11. =: 3.39 fJ, Laser Radiation by Excess Carriers in a Gallium Arsenide
Diode ................ 89
Iit • • • • • • • • • • • • • • • • • • • • • • • • • • • • •
Yu. A. Bykovskii, I. G. Goncharov, and V. A. Maslov
Impurity Photoeffect in GaAs p -n Junctions. • • • • • • • • . . • • • • . • • . . • . • • • . . • . 92
A. A. Gutkin, E. M. Magerramov, D. N. Nasledov, and V. E. Sedov
1/f Noise of Surface-Barrier Diodes 99
N. I. Sablina and N. B. Strokan
Electrical Properties of (Ge) -GaAs Heterojunctions. • • • • • • • • • • • . • • • . . • • .• 104
QI
Ya. A. Fedotov, V. S. Zased, and E. A. Matson
Cadmium Telluride Nuclear-Radiation Counter .•.•..•••. . • . . . . . • • • • • . • •. 107
P. S. Kireev, L. I. Kalugina, A. V. Vanyukov, and I. P. Shilo
Filamentation of the Current in Diodes Made of Semiconductors with Deep Impurity
Levels. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 110
I. V. Varlamov, I. A. Sondaevskaya, and V. P. Sondaevskii
High-Temperature Silicon Carbide Rectifiers for High Reverse Voltage. . . • . • • . •• 115
V. I. Pavlichenko, I. V. Ryzhikov, and T. G. Kmita
Theory of the "du/dt Effect" in Thyristors. • . • • • . • • • . . • • . • • • • • . . • . • • . . .. 120
V. A. Kuz'min
Radiative Transitions in InAs Laser Diodes . • . . • • • • • . . • . . • . • . • . • . • . . • . .. 127
N. S. Baryshev
Characteristics of Radiation Emitted during Avalanche and Tunnel Breakdown of
Silicon p-n Junctions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 129
V. G. Mel'nik
Dependence of the Breakdown Voltage of Silicon p -n Junctions on the Surface
Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 134
E. V. Ostroumova
Some Features of the Temperature Dependence of the Static Turn-On Current of
Thyristors. . • . . • . . • . . . . • . • • • . . • • • • . . • • . • . . . . • . • . • . • •• 137
A. N. Dumanevich, R. E. Smolyanskii, and V. E. Chelnokov
Tunnel p -n Junctions in Indium Phosphide. • • • • • . . . • . • • • • • • • • • • • . • . . • . .. 142
A. N. Imenkov, N. V. Siukaev, and M. K. Khadikov
CONTENTS vii
Some Characteristics of the Capacitance of n'-n-p Structures
with "Deep" Levels .................... . 145
L. L. Makovskii, S. M. Ryvkin, N. B. Strokan, V. P. Subashieva,
and A. Kh. Khusianov
Investigation of DC Injection Lasers 150
0 ••• 0 •• 0 0 •••••••••• 0 0 ••••••••• 0 • •
P. G. Eliseev, A. I. Krasil'nikov, M. A. Man'ko, and V. P. Strakhov
Electrical Properties of Silicon p -n Junctions Subjected to Nonuniform Deformation 160
A. L. Polyakova and V. V. Shklovskaya-Kordi
Dependence of the Sensitivity of p -n Junctions to Nonuniform Deformation on the
Depth of the Junction below the Surface. • . • • • . • • • • . . . • . . • • • • • . 166
V. V. Zadde, A. K. Zaitseva, A. L. Polyakova, and
V. V. Shklovskaya-Kordi
"Critical" Turn-On Charge of a Thyristor. • . . . • . . . . . • • • . . . • • • • • . • . . • . . 170
A. I. Uvarov
Spectral Narrowing of the Radiation from InP and InP1_xAsx Injection Lasers 180
P. G. Eliseev and I. Ismailov
Departure from Quasi-Equilibrium in Semiconductors and Multimode Laser
Emission ............. 183
0 0 •••••••• 0 • • • • • • • • • • • • • • • • • • •
V. S. Mashkevich and V. A. Parnyuk
An Investigation of Photodiode Response ...•.••••.•••..•.••.••.•• 191
0 • • • •
N. Sh. Khaikin and M. A. Trishenkov
Current - VoItage Characteristics of p -n Junctions in Indium Phosphide - Gallium
Arsenide Solid Solutions .•••.•••.• ;. . • . . . . . • . • • • . • . . . • . . • 197
V. I. OSinskii, N. No Sirota, and G. G. Shienok
Current-Voltage Characteristics of Forward-Biased P-ni -n Silicon Diodes. . . . . • 200
Yu. A. Bykovskii, K. N. Vinogradov, V. F. EIesin, and V. V. Zuev
Some Properties of a Zinc Selenide Laser. • . . • • . • . . . • . . . . • . • . . • . . • • • . • 204
O. V. Bogdankevich and M. M. Zverev
Electron Microprobe Study of Concentration Profiles in GaP-GaAs and InP-InAs
Diffused Heteroj unctions. • • • • • • • • • • • . . . • • . . • • • • • • • . • • • • • • 209
T. D. Dzhafarov, T. T. Dedegkaev, and L. M. Dolginov
Photoelectric ProperUes of InP p -n Junctions. . . . • . . . • . • . . • . . . . . . . . . . . . 212
V. V. Galavanov, R. M. Kundukhov, D. N. Nasledov, and N. V. Siukaev
Conditions for Turning on a Thyristor by Short Gate Current Pulses. . . . . . . • . . . 216
A. 1. Uvarov
Thyristors with More than One Collector . • . . • • • • • • . . • . • • • . • • . • . . • • . . . 224
I. V. Grekhov and V. B. Shuman
p-n Junction Resistance of IMPATT Diodes at Frequencies from 0 to 10 Mc. . . . . • 228
V. L. Aronov, A. I. Mel 'nikov, and A. S. Tager
Influence of Cadmium Vapor Pressure on the Diffusion of Indium in CdTe • • . . • . . . 234
L. V. Maslova, O. A. Matveev, Yu. V. Rud', and K. V. Sanin
Radiative Recombination in Ge-Doped GaAs Diodes. • . • . . . . . . . . . . . . . • • . . . . 238
C. Constantinescu, G. Popovici, P. Mihailovici, and 1. Petrescu
viii CONTENTS
Calculation of the Current-Voltage Characteristic for a Heterojunction Tunnel Diode 242
A. I. Gubanov and S. N. Dobrynin
Experimental Study of Photodiode Response Using the Photocurrent Shot Noise
Spectrum ........................................... 251
D. V. Tarkhin and N. N. Armencha
Self-Modulation of Microwave Oscillations Generated in Gunn Diodes . 255
I. I. Abkevich
Threshold Energy for Electron - Hole Pair Production by Hot Electrons in GaAs 263
A. A. Gutkin, E. M. Magerramov, D. N. Nasledov, and V. E. Sedov
Electrical Fluctuations in Silicon Carbide Junctions . • . . . . . . . . . . . . . . . . . . . • 268
Yu. S. Karpov, V. S. Galushko, and V. Mertins
Strain Effect in Polycrystalline Films of Indium Antimonide and Gallium
Antimonide. . • . . . . . . . . . . . . . • . . . . . • . . • . . . . . . . . . . • . . . . . 271
I. I. Fal'ko
Flux-Method Calculations of the Characteristics of Semiconductor Devices Having
an Electric Field in the Base Region. . . . . . . . . . . . • • . . . . . . • . . . . 275
1. M. Beskrovnyi
Thermally Stimulated Currents in p -n Junctions in Gallium Phosphide. . . . . . • • . • 284
N. M. Kolchanova, R. F. Mamedova, M. A. Mirdzhalilova,
and D. N. Nasledov
Alx Ga1-x As - GaAs Heterojunctions. . . . . . . . . . • • . . . . . . . . . . . . . . . . . . . • • • 287
Zh. I. Alferov, V. M. Andreev, V. 1. Korol'kov, E. L. Portnoi,
and D. N. Tret'yakov
Recombination Mechanisms in Photosensitive Films of the PbS Group 294
B. V. Izvozchikov and I. A. Taksami
An Investigation of a Pressure-Sensitive Transistor. . • . . . . . . . . . • . . . • . • . . . 299
L. N. Syrkin and N. N. Feoktistova
Power of the Radiation Emitted during the Tunnel Breakdown of Silicon p-n
Junctions. . . . . • . . . . . . . . • . . . . . • . . . . . . • . . • . . . . . . • . . . . . 311
V. G. Mel'nik
Influence of X-Ray Radiation on Some Parameters of p-n Junctions in Silicon. . . . . 314
O. A. Klimkova and O. R. Niyazova
Amplification of the Photocurrent in Semiconducting Photoresistors with Neutral
Contacts . . • . . • . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . • . . . . • . 317
G. A. Kazantsev and 1. I. Taubkin
Analysis of Processes in Multilayer Semiconductor Structures of the
n-p-n-p-n-p Type. . . . . . . . . . • . • • • • • . • • . . . • . . . . • • • . • • • 321
A. A. Lebedev
Current-Voltage Characteristics of p-n -p-n Structures Governed by
Recombination, Generation, and Avalanche Multiplication Processes
in p-n Junctions. . . . . • . . . . . . . . . • . . . . • • . . . . . . . . . . . . . . . . 330
V. A. Kuz'min and Yu. A. Parmenov
CONTENTS ix
Overload on a Thyristor Caused by a Single Large-Amplitude Current Pulse. . . . • . • 339
E. F. Burtsev, I. V. Grekhov, N. N. Kryukova, E. V. Palko,
and A. I. Uvarov
New Optoelectronic Devices Made of Zinc-Compensated Silicon. . . . . . . . . . . • . • • . 350
B. V. Kornilov
Investigation of Electrical and Luminescent Properties of Diffused and Epitaxial p-n
Junctions in Aluminum-Doped Silicon Carbide . . • • . . • . • • . • . . . . . . . 357
V. I. Pavlichenko and I. V. Ryzhikov
DIFFERENTIAL RESISTANCE AND
DIFFUSION CAPACITANCE OF JUNCTIONS IN
p-n-n+STRUCTURES AT HIGH INJECTION LEVELS
D. A. Aronov and Ya. P. Kotov
Physicotechnical Institute
Academy of Science of the Uzbek SSR, Tashkent
+
An analysis is made of the current and frequency dependences of the impedance of p-n and n-n junctions
+
in a p-n-n structure (an expression for this impedance has been derived earlier by the present authors [1)).
The analysis is carried out for high injection currents through the structure, when it is necessary to take into
account the drift component of the current in the base and the injection leakage through the contacts. The
impedance of the junctions is represented by an equivalent circuit in the form of a differential resistance
and diffusion capacitance, connected in parallel. An investigation is made of the influence of the leakage
on the frequency characteristics of the junctions in the case of low and high rates of leakage through the
contacts, compared with the carrier combination velocity in the base. Expressions are deduced for the low
frequency differential resistance and diffusion capacitance whose values can be used, in so me cases, to de
termine the length of the base and the lifetime of nonequilibrium carriers in the structure. It is shown that
strong deviations of the frequency dependence of the junction impedance from the suggested law are possi
ble at high frequencies. Thus, fo.r example, at low rates of leakage in short diodes at moderate frequencies,
the junction capacitances are frequency-independent and the resistances are inversely proportional to the
square of the frequency. It is also shown that the differential resistance of the junctions is inversely pro
portional to the current for any ratio of the leakage rate and the carrier recombination velocity in the base.
The junction capacitance is proportional to the current only in so me cases: for example, at high leakage
rates, the junction capacitance is proportional to the square root of the current. The results obtained can
be used in an analysis of the reactive and active (resistive) components of the impedance of the bulk of a
diode.
The present paper gives an analysis of the expressions derived in [I] for the impedance of a
junction in a p-n-n+ structure. The aim is to determine the dependences of the active (res ist
ive) and reactive components of the impedance on the forward-current density, the alternating
signal frequency, and the base length for various values of the ratio of the recombination veloc
ity in the base and the corresponding velocity in the low-resistivity regions.
Representing Eqs. (13) and (14) from {I] in the form
Z-pl- n = Rp-l- n + I.W,C p -n' Z;-1n + = R;-1n + + iwC n-n+, (1)
1