Table Of Content

Subject index a-SiC:H 149 Damages 188 a-Si:H 146, 265, 269, 523, 571 Dangling bonds 69, 181, 227 a-Si:H ultrathin films 566 Decomposition 45 a-SiSn:H 571 Deep defect 561 Ab initio calculations 181, 413 Deep-level passivation 3 Activation energies 135 Deep levels 540 Aggregation 223 Defect passivation 561 AMI method 535 Defect structure 325 Amorphous silicon 69, 146, 273, 277, 281, 305 Defects 201, 231, 235,545 Anharmonicity 409 Dephasing 447 Annealing 281 Deposition 574 Annealing of a-Si:H 277 Desorption of hydrogen 497 Anodized porous silicon 535 Diatomic hydrogen 3 Aqueous solution 124 Diffusion 21, 85,98, 105, 129, 146, 201, 240 Assignment 245 Diffusion model 135 Atomic hydrogen 168 Diffusion of H* and H’ = 135 Atomic structure 69 Dimerization 45 Au/GaAs Schottky barriers 513 Dislocations 285,553 Axial complexes 351 Dispersion 146 Dispersive diffusion 523 Displacement field 259 BH and AIH complexes 129 Dissociation 457 Bond-centred H defects 181 Dissociation energy 135 Boron 361, 503,574 DLTS 365 Bubbles 259 Donor level 135 Dopant neutralization 421 c-silicon 231 Dopants 305 C-V and DLTS techniques 231 Doped amorphous silicon 574 Cadmium 320 Dry etching 201 Carbon 365, 417,574 Dynamics 33 CdHgTe 550 Dynamics of hydrogen 320 CdTe 550 Channelling 335 Electrolytic hydrogenation 124 Charge state of hydrogen 365 Electron energy loss spectroscopy 487 Charge states 85 Electron energy loss spectrum 436 Chemisorption 429,518 Electronic level 417 Cluster method 413 Electronic metastability 69 Complexes 21, 135, 295 Electronic properties 436 Crystal surface 518 Electronic structure 295, 429 Crystalline and amorphous silicon 98 Electroreflectance 557 Crystalline semiconductors 33 Elemental semiconductors 168 Crystalline silicon 105 Ellipsometry 566 580 Subject index Energy barriers 295 Hydrogen vibrations in silicon 253 Enhanced oxygen diffusion 115 Hydrogenated amorphous semiconductors — 105 Enhanced quantum mechanical effects 33 Hydrogenated amorphous silicon 105, 141, 227 EPR (electron paramagnetic resonance) 155 Hydrogenation 188, 421, 557 Equilibration 69 Hyperfine structure 33 Equilibrium sites 168 Etching 45, 481 Implantation 188 Extended defects 218 Impurity complexes 351 In situ analysis 566 Field effect transistors 397 In situ Kelvin probe 523 Infrared 245,566 GaAlAs 540 Infrared absorption spectrometry 281 GaAs 235, 285, 335, 397, 409, 557 Infrared spectroscopy 351, 447 GaAs(1 10) 436 InP 397 GaAs(1 10) surface 487 Interface charges 557 GaAs surface modification 513 Interface defects 507 GaAs/GaAlAs heterostructures 561 interfaces 469 GalnAs 421 Interstitial Dx molecules 240 GaP 245 lon implantation 155 Germanium 335 Gettering 553 Kinetics of dissociation 365 Grain-boundaries 469 Growth 69 Lasers 397 Lattice defects 417 H, 197 LDAc alculations 392 H" and H* species 129 LEC growth 383 H-chemisorbed Si 535 Lifetime 447 H complexes 371 Light-induced effects 227, 265 H-implantation 235 Local vibrational mode 245 H> passivation 507 Local vibrational modes 413 H-passivation in GaAs 413 Loops 285 H-Be pairs 409 Low-angle neutron scattering 14] H-Si pairs 409 H-Sn pairs 409 Magnetic resonance 507 HgTe 550 Magnetron sputtering 571 Highly doped silicon surface 503 MBE 540 Hopping 365 MBE-GaAs_ 561 Hydrides 457 Metastability 33, 197, 265 Hydrogen 320, 540, 545, 553 Microsplits 285 Hydrogen activation 351 MOCVD-grown layers 550 Hydrogen complexes 223 Molecular dynamics simulations 98 Hydrogen content evolution 149 Molecular hydrogen 259, 305 Hydrogen diffusion 69, 277, 421 Molecule formation 85 Hydrogen-dopant complex dissociation 3 Monohydride phase 492 Hydrogen effusion 105 Multilayers 141 Hydrogen implantation 273 Muonium 33, 168 Hydrogen in GaAs 392 Hydrogen in semiconductors 21 Neutralisation 371 249 Hydrogen induced defects 3 Neutron radiation defects Hydrogen microstructure 305 NMR 227, 305 Hydrogen passivation 351 Hydrogen-related defect 155 OMVPE 383 Subject index Optical band gap 281 Shallow and deep levels 231 Optical recombination 201 Shallow-donor impurities 503 Oxygen diffusion 115 Shallow impurities 325 Si and GaAs parameters 3 p-type crystalline silicon 240 Si(1 11) and Ge(1 11) surfaces 492 p-type silicon 129 Sisurfaces 497 PAC 320), 335 Si-H bond 566 Pair configuration 197 Si-H infrared bands 249 Passivation Silicon 124, 155, 197, 223, 320, 335, 361, 365, 518, 545, Passivation of defects 392 a Passivation of impurities 397 Silicon carbide 518 Passivation of shallow donor states and of deep traps Silicon containing hydrogen 249 557 Silicon single crystal 259 Permeation 85 Simulation 129 Phases of adsorbed hydrogen 497 Si/SiO2 interface 469, 507 Phosphorus Spectroscopic ellipsometry 497 Phosphorus implantation 273 Staebler—Wronski effect 181 Photo cathode 124 Stretched exponential relaxation 69 Photoconductivity 351 Stretching vibrations 487 Photoemission 457, 492 Structural and dynamical properties 98 Photoemission yield spectroscopy 503 Structure 305 Photoluminescence 218, 540, 557 Structure change 481 Photothermal deflection spectroscopy 269 Supermolecular complex 259 Picosecond photoluminescence 561 Surface desorption 105 Piezo-absorption 371 Surface passivation 523 Pinning levels 557 Surface reactions 45, 48] Plasma _ 115 Surface stoichiometry 481 Plasma decomposition 57] Surface structure 48] Plasma etching 218 Surface vibration 447 Plasma treatment 231 Platelet 197 Theoretical methods 168 Platelets 223 Theory 21 Polycrystalline semiconductors 469 Thermal annealing 269 Properties, electronic, structural and vibrational 4: Thermal desorption 269 Proton-bombardment 285 Thermal stability 417, 492 Protons 188 I1I-V compounds = 371 III—V compounds surfaces of 457 Reactivation 36] III-V semiconductor surfaces 436 Reactive ion etching 513 Transmission electron microscopy 285 Recombination 227 Reconstruction 518 Ultraviolet photoelectron spectrum 436 Reorientation kinetics 325 Unintentional hydrogen 383 RIE 383 Van Wieringen and Warmoltz expression 85 Segregated impurities 469 Vibration modes 371 Segregation 45 Vibrational frequencies 295 Semiconductor surfaces 429 Vibrational spectroscopy 240), 325 Semiconductors 188 Shallow-acceptor impurities 503 Zinc doped GaAs_ 135