Photovoltaic Power Generation: Proceedings of the Second Contractors’ Meeting held in Hamburg, 16–18 September 1987

320 Pages·1988·12.091 MB·English

by  Pr. J. P. M. Schmitt, S. A. Solems, Prof. G. Winterling, G. Willeke (auth.), R. van Overstraeten, G. Caratti (eds.)

Photovoltaic Power Generation
Solar Energy Development - Third Programme
Series Editor: W. Palz
Volume 3
Photovoltaic Power Generation
Volume 1: Photovoltaic Power Generation
Proceedings of the First Contractors' Meeting,
held in Brussels, 18 April 1986
Volume 2: Solar Energy Applications to Buildings and
Solar Radiation Data
PhotoYoltaic Power
Generation
Proceedings of the
Second Contractors' Meeting held in
Hamburg, 16-18 September 1987
edited by
R. van Overstraeten
and
G. Caratti
Commission of the European Communities,
Brussels, Belgium
KLUWER ACADEMIC PUBLISHERS
DORDRECHT / BOSTON / LONDON
for the Commission of the European Communities
Library of Congress Cataloging in Publication Data
Photovoltaic power generation proceedings of the second contractors'
meeting held in Hamburg. 16-18 September 1987 / edited by R. van
Overstraeten and G. Caratti.
p. cm. -- (Solar energy development--third programme; v. 3)
"Commlssion of the European Communities, Brussels. Belgium."
Inc ludes index.
ISBN-13: 978-94-010-7821-4 e-ISBN-13: 978-94-009-2933-3
001: 10.1007/ 978-94-009-2933-3
1. Photovoltaic power generatlon--Congresses. I. Overstraeten,
R. van. II. Carattl. G. . 1956- III. CommisSion of the European
Communities. IV. Series.
TK2960.P467 1988
621.31'244--dc19 87-36102
CIP
TSBN-13: 978-94-010-7821-4
Publication arrangements by
Commission of the European Communities
Directorate-General Telecommunications, Information Industries and Innovation, Luxembourg
EUR 11368
© 1988 ECSC, EEC, EAEC, Brussels and Luxembourg
Softcover reprint of the hardcover lst edition 1988
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CON TEN T S
Photovoltaic Power Generation R&D Programme lX
AMORPHOUS SILICON SOLAR CELLS (AMOR)
Development of the scientific and technical basis for
integrated amorphous silicon modules
- Deposition techniques for a-Si
J.P.M. SCHMITT, Solems S.A., France
- Physics of the pin device
G. WINTERLING, MBB, F.R. Germany 13
- Improvement of the device structure
G. WILLEKE, IMEC, Belgium 21
- Description of the research work carried out at SCK/CEN
P. NAGELS, SCK/CEN, Belgium 33
- AES analysis of the SnO /a-Si:H inferface
H.H. BRONGERSMA, A.S. V~RLINDE, H.J. VAN DAAL,
Eindhoven University of Technology, The Netherlands 38
- The French contribution to the project
G. de ROSNY, CNRS, France 44
- Light trapping in a-Si:H solar cells by texturization of
the glass substrate
O. MARIS, P. VILATO, Saint-Gobain Recherche, France 48
- Photochemical process induced by a low pressure Hg lamp
and a pulsed ArF excimer laser for depositing hydrogenated
silicon films
E. FOGARASSY, P. SIFFERT, C.R.N. Lab. Phase, France 53
- Vacuum UV photo CVD for amorphous silicon carbon alloys
G.H. BAUER, University of Stuttgart, F.R. Germany 60
- Preparation of improved amorphous silicon cells with
p-i-n structure based on new volatile hydrides and
fluorides of silicon and germanium
H. SCHMIDBAUR, Technical Univ. Munich, F.R. Germany 65
- Development of the scientific and technical basis for
integrated amorphous silicon modules
L. DELGADO, M.T. GUTIERREZ, P. ROMAN, CIEMAT-IER. Spain 70
-v-
Low-gap alloys for amorphous silicon based solar cells
- Narrow band-gap alloys for the improvement of efficiency
of amorphous silicon-based solar cells
J. BULLOT, Universite Paris-Sud, France 76
- The Italian contribution to the project
R. GISLON, ENEA/FARE, Italy 90
- Characterization of amorphous silicon alloys through
thermal H effusion
J.L. MORENZA, G. SARDIN, C. ROCH, University of Barcelona, Spain 105
- Characterization of hydrogenated amorphous silicon by
photo deflection spectroscopy
J.W. METSELAAR, M. KLEEFSTRA, Delft Univ. of Technology
The Netherlands 110
Kinetic study of the deposition process of glow discharge a-Si:H
for high efficiency solar cells
- The Greek contribution to the project
D. MATARAS, D. RAPAKOULIAS, S. KAVADIAS, Univ. Campus-
Patras, Greece 114
- Characterization of SiH4:H2 plasmas for a-Si:H film
depo&ition
G. BRUNO, P. CAPEZZUTO, F. CRAMAROSSA, Univ.of Bari, Italy 125
Electro-Optical properties of a-Si;H/~C-Si;H and
a-Si:C:H/~C-Si:C:H undoped and doped films produced by
a TCDDC system
L.J.M. GUIMARAES, Universidade Nova de Lisboa, Portugal 131
Development of a high deposition rate technique for device
quality thin films of hydrogenated amorphous silicon
A. CHRISTOU, Research Centre of Crete, Greece 137
Preparation of solar grade amorphous silicon for PV cells
by means of an electrolytic process
M.V. GINATTA, Elettrochimica Marco Ginatta, Italy 140
Hydrogenated amorphous silicon by disilane LPCVD
A. SHAMS I , TEAM srI, Italy 149
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THIN FILM SOLAR CELLS FROM ALTERNATIVE MATERIALS (ALTERNA)
• High efficiency thin-film solar cells on upgraded
metallurgical grade silicon substrates
M. CAYMAX, IMEC, Belgium 157
• The French contribution to the project
M. RODOT, G. REVEL, CNRS, France 174
Modelling of epitaxial cells on UMG silicon and feasibility
of a high throughput epitaxial reactor
A. LUQUE, G. SALA, I.E.S.-E.T.S.I., Spain 180
Growth and characterization of poly-Si ingots
D. MARGADONNA, R. PERUZZI, R. SPOSITO, Italsolar, Italy 184
Growth and characterization of poly-Si ingots
S. PIZZINI, A. SANDRINELLI, D. NARDUCCI, M. BEGHI
University of Milano, Italy 191
2. Thin film solar cells based on II-VI and ternary chalcopyrite
semiconductor materials
Thin film solar cells based on the chalcopyrite semi
conductor CU(GA,IN)SE
H.W. SCHOCK, University of Stuttgart, F.R~ Germany 199
• Research and development on sprayed CdS-CuInSe2 thin film
solar cells
M. SAVELL I , J. BOUGNOT, S. DUCHEMIN, V. CHEN, J.C. YOYOTTE,
Universite des Sciences et Techniques du Languedoc, France 205
CuInSe2/CdS thin film solar cells by R.F. sputtering
N. ROMEO, University of Parma, Italy 210
Electrochemical study of chalcopyrite semiconductors
J. VEDEL, CNRS, France 214
Thin film of copper indium diselenide for PV devices
R. HILL, Newcastle Polytechnic, United Kindgom 220
Development of CdSe thin film solar cells with regard to
the requirements for the use in tandem structures
H. RICHTER, Battelle-Institut, F.R. Germany 225
The fabrication of merocyanine dyes for use as PV materials
R.W. BUCKLEY, Twyford Church of England High School,
United Kindgom 230
- vii-
3. III-V compound semiconductors for use in thin film cells or
!~-~~~~!~~!~-~~!~!!~~~!-~~!!~------------------------------
Optimization of high efficiency multilayer solar cells
based on III-V compounds
- MOCVD and characterization
M.H.J.M. DE CROON, L.J. GILING, University of Nijmegen,
The Netherlands 234
- ~;BE and physical analysis
M. MEURIS, G. BORGHS, W. VANDERVORST, IMEC, Belgium 243
- Inhomogeneities in LEC GaAs substrates for solar cell
applications
L. ZANOTTI, C. ·FRIGERI, G. FRIGERIO, Istituto Maspec, Italy 249
High efficiency multispectral cells based on III-V compound
semiconductors
C. VERIE, CNRS, France 254
GaAs thin film solar cells obtained by vapour phase homoepitaxy
(VPE) on reusable substrates
- The contribution by ENEA
M. GAROZZO, ENEA/FARE, Italy 261
- The contribution by CISE
C. FLORES, B. BOLLANI, D. PASSONI, CISE, Italy 274
Study on the applicability of the ionized cluster beam deposition
technology for GaAs thin film solar cells
D. BONNET, Battelle Institute, F.R. Germany 279
High efficiency III-V solar cells for use with fluorescent
concentrators
- The German contribution to the project
K. HEIDLER, Fraunhofer Gesellschaft, F.R. Germany 285
- The Belgian contribution to the project
G. BORGHS, M. MAUK, P. DE MEESTER,S. Xu,R. BAETS, lMEC, Belgium 290
Hydrogen effect on the electrical properties of amorphous
gallium arsenide
H. CARCHANO, University of Aix-Marseille, France 297
List of authors 303
-viii -
PHOTOVOLTAIC POWER GENERATION R&D PROGRAMME
The Programme covers the period 1985-1988. The overall budget is
approximately 20 million ECU. The programme was adopted as part of the
sub-programme Solar Energy which in turn is part of the Non-nuclear
Energy R&D programme.
The Commission of the European Communities is responsible for the
implementation of the programme.
Contracts have mostly been concluded via calls for proposals published in
the Official Journals C 69/3 of 16 March 1985 and C 146/2 of 13 June
1986. These calls for proposals comprised:
- Action C1: Amorphous s~licon solar cells
- Action C2: Thin film solar cells from alternative materials
- Action C3: Photovoltaic pilot programme
Action C1: Amorphous silicOll solar cells (AMOR)
The main thrust of this action is based on projects concerning a-Si solar
cells prepared mainly by the glow discharge technique, complemented by a
small number of projects on promising alternative a-Si deposition
methods.
a) a-Si solar cells mainly prepared by the glow discharge technique
The silane glow discharge and related techniques have been identified as
today s most reliable and promising preparation methods. In this field,
I
two large projects are being supported which include two leading European
a-Si solar cell manufacturers (Solems of France and MBB of West Germany)
and major research institutions. These projects, which focus on the
development of a European scientific and technical basis for integrated
single and multi-junction a-Si modules, rely on strong German, French and
Italian collaborative initiatives. In addition, support is given to a
more fundamental and detailed study of the glow discharge deposition
process.
b) Evaluation of promising alternative a-Si deposition methods
In this field a small number of experimental studies are being carried
out, which are devoted to promising alternative deposition methods. These
techniques include the ionized cluster beam (ICB) method, disilane LPCVD
as well as a novel electrolytic process.
- ix-
Action C2: Thin film solar cells from alternative materials (ALTERNA)
This action call be subdivided according to the different materials
involved, covering topics on group IV semiconductors as well as III-V and
II-VI compounds.
a) High efficiency crystalline silicon thin film solar cells
In the field of high efficiellcy thin film solar cells on upgraded
metallurgical grade (UMG) silicon substrates, a new approach has been
initiated by five research groups including IMEC (Belgium) as project
coordinator. This project aims at the realization of 12% efficient cells.
b) Thin film solar cells based on II-VI and ternary chalcopyrite
semiconductor materials
A large multinational project headed by the University of Stuttgart (FRG)
aims at the evaluation of different deposition methods for Cu(Ga, In)Sez
solar cells. In another project CdSe thin film structures are developea
for use in tandem cell cOllfigurations. It is interesting to note a small
effort on the fabrication and performance of merocyanine CdS solar cells
in a school laboratory.
c) III-V compound semiconductors for use in thin film cells or in
monolytic multilayer cells
Considerable attention is paid to the area of III-V compound
semiconductors. Several different preparation methods are being
investigated including MBE, MOCVD, IMLPE and ICB among others. Cell
technologies range from monolytic multilayer cells to VPE deposited thin
film cells on reusable substrates as well as structures based on cr-Si
substrates. The different activities are coordinated by a Euro GaAs PV
working group headed by the LPSES group of the French CNRS.
Action C3: Photovoltaic pilot programme
The aim of this action is the development of innovative photovoltaic
power systems, with emphasis both on 'the single components and the
overall system.
During its 1979-1984 solar energy R&D programme the Commission has
financed the erection of sixteen pilot plants distributed over eight
Member States.
Further research is now needed to upgrade their performance as well as to
resolve specific problems occurring in some parts of these plants.
This programme includes in particular concerted actions on advanced
subsystems. such as battery control. power conditioning. modules etc.
-x-