Oxide Electronics (Wiley Series in Materials for Electronic & Optoelectronic Applications)

607 Pages·2021·25.949 MB·English

by  Asim K. Ray (editor)

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OxideElectronics
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WileySeriesinMaterialsforElectronic&
OptoelectronicApplications
www.wiley.com/go/meoa
SeriesEditors
ProfessorRichardCurry,UniversityofManchester,Manchester,UK
ProfessorJunLuo,ChineseAcademyofSciences,Beijing,China
ProfessorHarryE.Ruda,UniversityofToronto,Toronto,Canada
FoundingSeriesEditors
ProfessorArthurWilloughby,UniversityofSouthampton,Southampton,UK
DrPeterCapper,Ex-LeonardoMWLtd,Southampton,UK
ProfessorSafaKasap,UniversityofSaskatchewan,Saskatoon,Canada
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OxideElectronics,EditedbyAsimRay
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Oxide Electronics
Editedby
AsimRay
BrunelUniversity
London,UK
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Thiseditionfirstpublished2021
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LibraryofCongressCataloging-in-PublicationData
Names:Ray,AsimK.,editor.
Title:Oxideelectronics/editedbyAsimRay,BrunelUniversity
London,England,UnitedKingdom.
Description:Firstedition.|Hoboken,NJ,USA:JohnWileyandSons,Inc.,
2021.|Series:Wileyseriesinmaterialsforelectronic&
optoelectronicapplications|Includesbibliographicalreferencesand
index.
Identifiers:LCCN2020051123(print)|LCCN2020051124(ebook)|ISBN
9781119529477(hardback)|ISBN9781119529484(adobepdf)|ISBN
9781119529507(epub)
Subjects:LCSH:Electronics–Materials.|Metallicoxides.|
Oxides–Electricproperties.
Classification:LCCTK7871.O952021(print)|LCCTK7871(ebook)|DDC
621.381028/4–dc23
LCrecordavailableathttps://lccn.loc.gov/2020051123
LCebookrecordavailableathttps://lccn.loc.gov/2020051124
CoverDesign:Wiley
CoverImages:CourtesyofSubhasishBasuMajumder
Setin10/12ptWarnockProbySPiGlobal,Chennai,India
10 9 8 7 6 5 4 3 2 1
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v
Contents
SeriesPreface xiii
Preface xv
ListofContributors xvii
1 GrapheneOxideforElectronics 1
FenghuaLiu,LifengZhang,LijianWang,BinyuanZhaoandWeipingWu
1.1 Introduction 1
1.2 SynthesisandCharacterizationsofGrapheneOxide 2
1.2.1 ChemicalReductionofGrapheneOxide(GO) 2
1.2.2 MicrowaveMethod 2
(cid:2) 1.2.3 PlasmaMethod 3 (cid:2)
1.2.4 LaserMethod 4
1.3 EnergyHarvestApplicationsofGrapheneOxide 5
1.3.1 SolarCells 5
1.3.2 SolarThermalEnergyHarvestDevices 7
1.4 EnergyStorageApplicationsofGrapheneOxide 7
1.4.1 Supercapacitors 7
1.4.2 Batteries 10
1.5 ElectronicDeviceApplicationsofGrapheneOxide 12
1.6 LargeAreaElectronicsApplicationsofGrapheneOxide 13
References 16
2 FlexibleandWearableGraphene-BasedE-Textiles 21
NazmulKarim,ShailaAfroj,DamienLeechandAmrM.Abdelkader
2.1 IntroductiontoWearableE-Textiles 21
2.2 SynthesisofGrapheneDerivatives 22
2.2.1 GrapheneOxide 22
2.2.2 ReducedGrapheneOxide 24
2.3 Graphene-BasedWearableE-Textiles 25
2.3.1 Graphene-BasedTextileFibres 26
2.3.2 Graphene-CoatedTextiles 27
2.3.3 Graphene-PrintedWearableE-Textiles 28
2.3.3.1 ScreenPrinting 30
2.3.3.2 InkjetPrinting 30
2.4 SurfacePre-andPost-TreatmentofSubstrates 32
2.5 Applications 34
2.5.1 Sensors 34
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2.5.2 Supercapacitor 36
2.5.3 RechargeableBatteries 38
2.5.4 Optoelectronics 39
2.6 ChallengesandOutlook 40
References 41
3 MagneticInteractionsintheCubicMottInsulatorsNiO,MnO,andCoOandthe
RelatedOxidesCuOandFeO 51
DavidJ.LockwoodandMichaelG.Cottam
3.1 Introduction 51
3.2 Spin–SpinInteractions 52
3.2.1 MagneticOrderingBelowT 52
N
3.2.2 Magnetostriction 53
3.2.3 MagneticandElectronicExcitations 54
3.3 Spin–PhononInteractions 59
3.3.1 PhononandMagnonTemperatureDependences 60
3.3.2 PhononModeSplittingBelowT 62
N
3.4 OtherRelatedMaterials 64
3.4.1 CupricOxide 64
3.4.2 IronMonoxide 65
3.5 Conclusions 68
Acknowledgments 68
References 68
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4 High-𝜿DielectricOxidesforElectronics 75
TongZhang,XiaoyangZhang,YiYangandWeipingWu
4.1 IntroductionofHigh-𝜅DielectricOxides 75
4.1.1 GroupIIIADielectricOxides 77
4.1.2 GroupIIIBHigh-𝜅DielectricOxides 77
4.1.3 GroupIVBHigh-𝜅DielectricOxides 77
4.2 TheDepositionofHigh-𝜅OxideDielectrics 78
4.3 High-𝜅DielectricOxidesforField-EffectTransistors 80
4.3.1 High-𝜅DielectricOxidesfortheMOSFETs 80
4.3.2 High-𝜅DielectricOxidesforTunnelField-EffectTransistors 84
4.4 High-𝜅DielectricOxidesforMemoryDevices 85
4.4.1 High-𝜅DielectricOxidesforDRAM 85
4.4.2 High-𝜅DielectricOxidesforReRAM 87
References 88
5 LowTemperatureGrowthofGermaniumOxideNanowiresbyTemplateBased
SelfAssemblyandtheirRamanCharacterization 93
RaisaFabiha,AbigailCasey,GregoryTriplettandSupriyoBandyopadhyay
5.1 Introduction 93
5.2 Synthesis 93
5.3 Characterization 96
5.4 RamanMeasurements 96
5.5 Conclusion 98
References 99
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Contents vii
6 ElectronicPhenomena,Electroforming,ResistiveSwitching,andDefect
ConductionBandsinMetal-Insulator-MetalDiodes 101
ThomasW.Hickmott
6.1 Introduction 101
6.2 Experimental 103
6.3 Electroforming,Electroluminescence,andElectronEmission 104
6.3.1 ElectroformingofAl-Al O -AgDiodes 104
2 3
6.3.2 ElectroluminescencefromAl-Al O -AgDiodes 104
2 3
6.3.3 ElectronEmissionfromAl-Al O -AgDiodes 105
2 3
6.3.4 VCNR,EL,andEMinOtherInsulators 107
6.3.5 TemperatureDependenceofEM 108
6.4 ElectrodeEffectsinResistiveSwitchingofNb-Nb O -MetalDiodes 109
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6.4.1 ResistiveSwitchinginNb-Nb O -MetalDiodes 109
2 5
6.4.2 ResistiveSwitchingatLowTemperatures 109
6.4.3 StructureinI-V CurvesofElectroformedNb-Nb O -Metal
2 5
Diodes 110
6.5 Conduction,Electroluminescence,andPhotoconductivityBefore
ElectroformingMIMDiodes 112
6.5.1 ConductioninNb-Nb O -AuDiodes 112
2 5
6.5.2 ElectroluminescenceinNb-Nb O -AuDiodes 112
2 5
6.5.3 ConductionandElectroluminescenceinMIMDiodeswith
TiO andTa O 115
2 2 5
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6.6 Discussion 118
6.6.1 DefectConductionBandsinAmorphousAl O 119
2 3
6.6.2 DefectConductionBandsinAmorphousNb O 121
2 5
6.6.3 DefectConductionBandsinAmorphousInsulators 123
6.7 SummaryandConclusions 125
References 125
7 LeadOxideasMaterialofChoiceforDirectConversionDetectors 129
AllaReznikandOleksiiSemeniuk
7.1 Introduction 129
7.2 CrystalStructureandElectronicPropertiesofPbO 130
7.2.1 CrystalStructureofTetragonalPbO(𝛼-PbO) 131
7.2.2 CrystalStructureofOrthorhombicPbO(𝛽-PbO) 132
7.2.3 ElectronicPropertiesof𝛼-and𝛽-PbO 133
7.3 DepositionProcessofPbOLayers 135
7.4 ChargeTransportMechanisminLeadOxide 147
7.4.1 ElectronTransportinpoly-PbO 148
References 151
8 ZnOVaristors:FromGrainBoundariestoPowerApplications 157
FelixGreuter
8.1 Introduction 157
8.2 ManufacturingProcessofZnOVaristors 160
8.3 MicrostructureandGrainBoundaries 162
8.4 GrainBoundaryPotentialBarriers 168
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8.5 The‘DoubleSchottkyBarrierDefectModel’ 174
8.6 HotElectronEffectsControllingtheBreakdownRegion 181
8.7 HotElectronEffectsandDynamicResponse 185
8.8 FromSingleGrainBoundariestoMicrostructuresandVaristorDevices 196
8.9 AgeingandLong-TermStabilityofVaristorMaterials 207
8.10 EnergyAbsorptionCapabilityandHighCurrentImpulseStresses 218
8.11 SummaryandOutlook 223
Acknowledgements 226
References 226
9 FundamentalPropertiesandPowerElectronicDeviceProgressofGallium
Oxide 235
XuanhuChen,ChennupatiJagadishandJiandongYe
9.1 Introduction 235
9.2 ElectronicPropertiesandDefectsofGa O 236
2 3
9.2.1 BulkCrystals,Epitaxy,andn–typeDoping 237
9.2.2 ElectronicBandStructureandFeasibilityofp–typeDoping 240
9.2.3 DefectBehaviourinBulkCrystalsandEpitaxialFilms 245
9.3 BasicDeviceCharacteristics 250
9.3.1 Metal-SemiconductorContact 250
9.3.1.1 BarrierFormation 250
9.3.1.2 Image-ForceLowering 252
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9.3.1.3 CarrierTransportandBreakdown 254
9.3.2 PhysicsofDeepDepletionGa O MOSFETs 257
2 3
9.3.2.1 Metal-Insulator-SemiconductorCapacitors 257
9.3.2.2 BasicDeviceCharacteristicsofDepletionMode
MOSFETsBasedonGa O 270
2 3
9.3.2.3 ApproachestoEnhancement-Mode𝛽-Ga O
2 3
MOSFETs 280
9.3.3 RelevantFigureofMeritinGa O 282
2 3
9.4 Ga O SchottkyRectifiers 286
2 3
9.4.1 EdgeTerminations 287
9.4.2 Ga O SchottkyRectifiers 295
2 3
9.4.3 Ga O p-nHeterojunctionDiodes 301
2 3
9.5 Ga O Transistors 307
2 3
9.5.1 OhmicContactstoGa O 307
2 3
9.5.2 DielectricMaterialsforGa O andMOSCaps 308
2 3
9.5.3 LateralGa O FETs 313
2 3
9.5.4 𝛽-Ga O MODFETs 324
2 3
9.5.5 VerticalGa O MOSFETs 330
2 3
9.6 Summary 335
References 336
10 EmergingTrends,Challenges,andApplicationsinSolid-StateLaserCooling 353
JyothisThomas,LauroMaia,YannickLedemi,YounesMessaddeqandRaman
Kashyap
10.1 Introduction 353
10.2 Theory 355
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