Optical Properties of Low Dimensional Silicon Structures

244 Pages·1993·8.557 MB·English

by  V. Lehmann (auth.), Daniel C. Bensahel, Leigh T. Canham, Stephano Ossicini (eds.)

Optical Properties of
Low Dimensional Silicon Structures
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Series E:AppliedSciences-Voi. 244
Optical Properties of
Low Dimensional
Silicon Structures
editedby
Daniel C. Bensahel
FranceTelecom,
CNET/CNS,
Meylan, France
Leigh T. Canham
Defence Research Agency,
Malvern, Worcs, U.K.
and
Stephano Ossicini
Dipartimentodi Fisica,
Universltă diModena,
Modena,Italy
Springer-Science+Business Media, B.V.
Proceedingsofthe NATO Advanced Research Workshop on
Optical Properties ofLow Dimensional Silicon Structures
Meylan, France
March 1-3, 1993
AC.I.P.CataloguerecordforthisbookisavailablefromtheLibraryofCongress.
ISBN978-94-010-4927-6 ISBN978-94-011-2092-0(eBook)
DOI10.1007/978-94-011-2092-0
Printedanacid-free paper
AIIRiahts Reserved
© 1993 SpringerScience+Business MediaDordrecht
Originallypublishedby Kluwer Academic Publishers in1993
Softcoverreprintofthehardcover1stedition1993
No part of the material protected by this copyright notice may be reproduced or
utilized in any form or by any means, electronic or mechanical, including photo
copying, recording or by any information storage and retrieval system, without written
permissionfromthecopyrightowner.
This book contains the proceedings of a NATO Advanced Research Workshop held
within the programme of activities of the NATO Special Programme on Nanoscale
Science as part of the activities of the NATO Science Committee.
Other books previously published as a result of the activities of the Special
Programme are:
NASTASI, M., PARKING, D.M. and GLEITER, H. (eds.), Mechanical Properties
and Deformation Behavior of Materials Having Ultra-Fine Microstructures. (ASIE
233) 1993 ISBN 0-7923-2195-2
VU THIEN BINH, GARCIA, N. and DRANSFELD, K. (eds), Nanosources and
manipulation of Atoms under High Fields and Temperatures: Applications. (E235)
1993 ISBN 0-7923-2266-5
LEBURTON, I.-P., PASCUAL 1. and SOTOMAYOR TORRES, C. (eds.),
Phonons in Semiconductor Nanostructures. (E236) 1993 ISBN 0-7923-2277-0
A VOURIS P. (ed.), Atomic and Nanometer-Scale Modification of Materials:
Fundamentals and Applications. (E239) 1993 ISBN 0-7923-2334-3
BLOCHL, P. E., JOACHIM, C. and FISHER, A. 1. (eds.), Computations for the
Nano-Scale. (E240) 1993 ISBN 0-7923-2360-2
POHL, D. W. and COURJON, D. (eds.) , Near Field Optics. (E242) 1993
ISBN 0-7923-2394-7
SALEMINK, H. W. M. and PASHLEY, M. D. (eds.), Semiconductor Interfaces at
the Sub-Nanomater Scale. (E243) 1993 ISBN 0-7923-2397-1
TABLE OF CONTENTS
Preface xi
"Microporous silicon: Formation mechanism and preparation
method"
V. Lehmann 1
"Electrochemical and chemical behavior of porous silicon layers:
the role of the material wettability and its high specific surface area"
A Halimaoui 11
"Fabrication of silicon nanostructures for light emission study"
HI. Liu, D.K. Biegelsen, N.M. Johnson, F.A Ponce, N.!. Maluf
& RF.W. Pease 23
"Light emission from porous silicon and other self organised low
dimensional systems"
B. Hamilton & S. Gardelis 35
"Preparation and properties of thin siloxene films on silicon"
M. Rosenbauer, M.s. Brandt, H.D. Fuchs, A Hapner,
A Breitschwerdt & M. Stutzmann 43
" Modelling of porous structures formation during electrochemical
treatment of materials"
V.P. Parkhutik, J.M. Martinez-Duart & J.M. Albella 55
"Electronic charge trapping effects in porous silicon"
L. Pavesi, L. Calliari, E. Zanghellini, G. Mariotto, M. Anderle & O.
Bisi 61
"Mechanical, optical and electrical properties of porous silicon
prepared
under clean conditions"
Y. Diawara, J.F. Currie & AYelon 69
''The influence of microelectronic processing steps on the properties
of porous silicon layers"
H Miinder, M.G. Berger, St. Frohnhoff, M. Thonissen, H Liith,
W. TheiB & L. Kiipper 75
viii
"Progress towards understanding and exploiting the luminescent
properties of highl y porous silicon"
L.T. Canham 81
""White" photoluminescence from electrochemically attacked silicon"
A Cameron, X. Chen, C Trager Cowan, D. Uttamchandani
& K.P. O'Donnell 95
"Electrochemical investigation of the electroluminescent properties
of porous silicon"
F. Muller, R. Herino, M. Ligeon, S. Billat, F. Gaspard, R. Romestain,
I.C Vial & A Bsiesy 101
"Phenomenological properties of the fast (blue) and slow (red)
components in the photoluminescence of porous silicon"
J.C Vial & I. Mihalcescu 117
"Electroluminescence from porous silicon"
F. Kozlowski, P. Steiner & W. Lang 123
"Optoelectronic properties of porous silicon"
N. Koshida 133
"Voltage Tunable electroluminescence of porous silicon"
A Bsiesy, F. Muller, M. Ligeon, F. Gaspard, R. Herino,
R. Romestain & J.C Vial 139
"Studies of porous silicon by Electron Microscopy"
AG. Cullis 147
"Scanning probe microscopies of luminescent porous silicon layers"
Ph. Dumas, M. Gu, C Syrykh, F. Salvan, J.K. Gimzewski, O. Vatel
& A Halimaoui 157
"In-situ combined infrared and photoluminescence investigation of
porous silicon during its etching"
V.M. Dubin, F. Ozanam & I.-N. Chazalviel 163
"Near surface states in Si and their possible role in the luminescence
of porous silicon"
D. Bois & J .M. Debever 169
IX
"Porous silicon electroluminescence mechanisms and defect
analysis"
J.F. Harvey, E.H. Poindexter, D.C Morton, F.C Pong, RA. Lux & R
Tw 1~
"Defect and structure analysis of n+ and p+-type porous silicon by
the
Electron Paramagnetic Resonance technique"
H.J. von Bardeleben, D. Stievenard*, A. Grosman, C Ortega & J.
Siejka 191
"Photoluminescence and optically detected magnetic resonance
investigations on porous silicon"
A. Kux & D. Hofmann 197
"Effects of the reduction of dielectric constant in nanoscale silicon"
R Tsu & D. Babic 203
"Quantum effects in porous-Si ?"
M. Voos & C Delalande 211
"Electronic properties of low dimensional silicon structures"
S. Ossicini, A. Fasolino & F. Bertardini 219
"Role of silicon molecules and crystallites in the luminescence of
porous silicon"
C Delerue, G. Allan & M. Lannoo 229
"Localisation of excitons on a quantum wire of fluctuating width"
KP. O'Donnell, F. Yang & E.J. Austin 235
PREFACE
The workshop on "Optical Properties of Low Dimensional Silicon
Structures" was held in Meylan, France on March, IsLyd, 1993. The workshop
took place inside the facilities of France Telecom- CNET. Around 45 leading
scientists working on this rapidly moving field were in attendance. Principal
support was provided by the Advanced Research Workshop Program of the
North Atlantic Treaty Organisation (NATO). French Delegation a l'Armement
and CNET gave also a small financial grant, the organisational part being
undertaken by the SEE and CNET.
There is currently intense research activity worldwide devoted to the
optical properties of low dimensional silicon structures. This follow the recent
discovery of efficient visible photoluminescence (PL) from highly porous silicon.
This workshop was intended to bring together all the leading European
scientists and laboratories in order to reveal the state of the art and to open new
research fields on this subject. A large number of invited talks took place (12)
together with regular contribution (20). The speakers were asked to leave nearly
1/3 of the time to the discussion with the audience, and that promoted both
formal and informal discussions between the participants.
The first day was devoted to the material aspects with a special emphasis
on porous silicon: a new electrochemical method for the determination of the
surface area of high porosity sample was presented together with the important
role of wettability on porous layer fabrication and processing. In the same
session, new fabrication procedures using advanced lithography (~100 nm) and
etching have been proposed as well as the use of zeolites as starting materials
for silicon impregnation. These last techniques, even if they provide only a weak
PL can nevertheless greatly assist in our understanding of the optoelectronic
properties of highly porous-Si. Finally, this session pointed out that structures
such as amorphous-Si or siloxene cannot explain the PL of porous-Si.
The second day was devoted to the characterisation techniques and
luminescent properties of porous-Si. In the characterization session,
Transmission Electron Microscopy has clearly established the crystallinity of
highly porous-Si. Tunneling Microscopy as well as EPR technique are under
development and will undoubtedly yield valuable information on luminescent
layer morphology and the role of defects on the internal surface. Others
sophisticated techniques such as ellipsometry continue to bring new insights.
Luminescence studies have been numerous and have given rise to several
models. The various models (quantum effects, a-Si, surface states, molecules)
cannot be unified. The majority of the participants agree (i) on the quantum
confinement effect and (ii) the good passivation of the surface crystallites (by H-
xi
xii
bonds in "fresh" porous-Si or thermal Si02 after high temperature oxidation).
The results obtained by ab-initio calculations so far are consistant with the
confinement hypothesis and explain qualitatively the dependence of the PL
decay time with the wavelength. We have noted that the confinement model is
bringing new insights in basic solid state physics concepts such as the dielectric
function and this area of basic research needs to be revisited. Two quite
different models have been proposed which attribute efficient visible emission
to c-Si nanostructures. In the "undulating wire model", geometrical c-Si disorder
(fluctuations in quantum wire width) gives rise to carrier localisation. In the
"kidney model", microstructural disorder at crystalline bounderies gives rise to
radiative surface states that trap photoexcited carriers.
Both efficient and wavelength tunable electroluminescence (EL) was
demonstrated using liquid contacts and a cathodic injection system. Localised
cathodoluminescence in a Scanning Electron Microscope and a Scanning
Tunneling Microscope has also been presented. These two techniques will be
used in the future for the control of the light emission zone in the porous layers.
ELwith solid state contact has been too reported but all the participants agree on
the too low quantum efficiency (~5.1O-4) compared to that obtained in EL with
liquid contact (10-2). Serious progress should be made in the future in order to
use these structures in practical applications: layer impregnation to form solid
composite structures may be one attractive approach to this problem.
In conclusion, this workshop has demonstrated that a consensus is
emerging on the origin of the visible luminescence of highly porous-Si. This
novel nanostructure is extending our knowledge into a new area of solid state
physics. However, for practical applications, the development of more efficient
and stable light emitting devices is clearly needed. Two important areas that
need further investigation in this respect are layer impregnation and detailed
analysis of the electrical and dielectric properties of luminescent structures.
Finally, the committee thanks all the participants and chairmen of the
sessions for their active and positive participation and wish also to express their
deeply felt thanks to a few who made critical contribution in the organisation of
the workshop: Mmes A. Alonzi and A. Gonthier, Mrs. E. Stauffert and R.
Charbaud for their assistance. Mlle. I. Sagnes and Dr. P.A. Badoz are also
thanked for their continual technical and organisational support before, during
and after the workshop.
Daniel C. Bensahel Leigh T. Canham Stefano Ossicini
Workshop Chairmen