Optical and Electronic Process of Nano-Matters

341 Pages·2001·11.647 MB·English

by  H. Hori (auth.), Motoichi Ohtsu (eds.)

OPTICAL AND ELECTRONIC PROCESS OF NANO-MATTERS
Advances in Optoelectronics (ADOP)
Editor-in-chief: Takeshi Kamiya (University ofTokyo)
Associate Editor: Motoichi Ohtsu (Tokyo Institute of Technology)
Editorial Board Members:
John E. Bowers (University of California at Santa Barbara)
Daniel Courjon (Institut des Microtechniques de Franche-Comte)
Ernst Goebel (Physikalisch Technische Bundesanstalt)
Tatsuo Izawa (NTT Electronics)
Satoshi Kawata (Osaka University)
Kazuroh Kikuchi (Univerisity of Tokyo)
David A. M. Miller (Stanford University)
David N. Payne (University of Southampton)
Klaus Petermann (Technical University of Berlin)
Yasuharu Suematsu (Kochi University of Technology)
Yoshihisa Yamamoto (Stanford University)
»
o OPTICAL AND
o
ELECTRONIC
-0
PROCESS
OF
NANO-MATTERS
Edited by
Motoichi OHTSU
Tokyo Institute of Technology, Yokohama
*
Springer-Science+Business Media, B.V.
C.I.P. Catalogue record for this book is available from the Library of Congress.
ISBN 978-90-481-5707-5 ISBN 978-94-017-2482-1 (eBook)
DOI 10.1007/978-94-017-2482-1
All Rights Reserved
© 2001 by Springer Science+Business Media Dordrecht
Originally published by Kluwer Academic Publishers in 2001
No part of the material protected by this copyright notice may be reproduced or utilized in
any form or by any means, electronic or mechanical, incIuding photo-copying, recording or
by any information storage and retrieval system, without written permission from the
copyright owner.
Preface
Sizes of electronic and photonic devices are decreasing drastically in
order to increase the degree of integration for large-capacity and ultrahigh
speed signal transmission and information processing. This miniaturization
must be rapidly progressed from now onward. For this progress, the sizes of
materials for composing these devices will be also decreased to several
nanometers. If such a nanometer-sized material is combined with the photons
and/or some other fields, it can exhibit specific characters, which are
considerably different from those ofbulky macroscopic systems. This combined
system has been called as a mesoscopic system. The first purpose of this book
is to study the physics of the mesoscopic system.
For this study, it is essential to diagnose the characteristics of miniaturized
devices and materials with the spatial resolution as high as several nanometers
or even higher. Therefore, novel methods, e.g., scanning probe microscopy,
should be developed for such the high-resolution diagnostics. The second
purpose of this book is to explore the possibility of developing new methods
for these diagnostics by utilizing local interaction between materials and
electron, photon, atomic force, and so on.
Conformation and structure of the materials of the mesoscopic system can
be modified by enhancing the local interaction between the materials and
electromagnetic field. This modification can suggest the possibility of novel
nano-fabrication methods. The third purpose of this book is to explore the
methods for such nano-fabrication.
Several articles on mesocopic systems have reviewed their physics,
diagnostics, and fabrication separately from the viewpoint of electronic
interaction. Some of them are the reviews on the application of scanning
tunneling microscopy. In contrast with them, the unique feature of this book
is to introduce the concept of nano-optics, i.e., near field optics into discussions
on mesoscopic systems.
Intensive discussions on the three purposes presented above, including
the methods of scanning tunneling microscopy, near field optics, and atomic
vi Preface
force microscopy, have been made by the 17 members of a working group in
the Institute ofElectrical Engineers of Japan from April 1996 to March 1998,
to which I have served as chairman. This book summarizes the main topics of
the discussion, where most of the co-authors have been the members of this
working group. Chapters 1-5 are devoted to physics. Chapters 6, 7, and 9-11
are for diagnostics, and Chapter 8 is for fabrication. Among them, reviews on
electronic systems are dealt with in Chapters 2-6, and 11. Those topics on near
field optical systems and on atomic force systems are mentioned in Chapters
6-8 and in Chapters 9-11, respectively. All the chapters are carefully organized
so that the readers can obtain a deep understanding on the contents. I hope that
this book will enable undergraduate and graduate students, junior scientists,
and engineers to systematically study the physics, diagnostics, and fabrication
of nano-sized materials and devices.
M.Ohtsu
March,2000
Contents
Preface. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v
List of Authors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Xl
Chapter 1
ELECTRONIC AND ELECTROMAGNETIC PROPERTIES
IN NANOMETER SCALES
1.1 Introduction .................................. .
1.2 Basic Features of Electronic and Optoelectronic Systems 3
1.3 Mesoscopic Electromagnetic Processes and
Coupled-Mode Descriptions . . . . . . . . . . . . . . . . . . . . . . . 12
1.4 Quantum Measurements and Interpretations. . . . . . . . . . . 18
1.5 Measurements and Diagnosis at a Nanometer Scale . . . . . 24
1.6 Electromagnetic Signal Transport as Circuit Design at
a Nanometer Scales . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
1.7 Electrical Signals in Coherent/Incoherent Electronic
Devices. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
1.8 Near-Field Optical Microscopes and the Micro-Macro
Connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
1.9 Electron Interaction with Electromagnetic Fields in
Nanometer Scale . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
Chapter 2
ELECTRON TRANSPORT IN SEMICONDUCTOR
QUANTUM DOTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
2.1 Introduction................................... 57
2.2 Quantum Dot Atoms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
2.3 Effects of a Magnetic Field . . . . . . . . . . . . . . . . . . . . . . . . 64
2.4 Manipulation of the Lateral Potential Geometry of
a Vertical Dot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
2.5 Quantum Dot Molecules . . . . . . . . . . . . . . . . . . . . . . . . . . 74
2.6 Double Dot Molecules-Planar Configuration . . . . . . . . . . 79
2.7 Summary...................................... 91
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
viii Contents
Chapter 3
ELECTRON ENERGY MODULATION WITH OPTICAL
EV ANESCENT W A VES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
3.2 Quantum Modulation of Electrons . . . . . . . . . . . . . . . . . . . 96
3.3 Micro-Gap Interaction Circuits . . . . . . . . . . . . . . . . . . . . . 97
3.4 Metal Film Gap and Dielectric Film Circuits . . . . . . . . . . . 99
3.5 Metal Micro-Slit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
3.6 Preliminary Experiment. . . . . . . . . . . . . . . . . . . . . . . . . .. 110
3.7 Fabrication of the Micro-Slit . . . . . . . . . . . . . . . . . . . . . . . 119
3.8 Summary...................................... 120
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Chapter 4
INTERACTIONS OF ELECTRONS AND ELECTROMAGNETIC
FIELDS IN A SINGLE MOLECULE. . ... . .... ....... ..... ... 123
4.1 Single Electron Tunneling and Photon-Assisted Tunneling 123
4.2 STM-Induced Photon Emission from Single Molecules
on Cu(100) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Chapter 5
THEORY OF ELECTRONIC AND ATOMIC PROCESSES IN
SCANNING PROBE MICROSCOPY ........................ 147
5.1 Introduction........................... . . . . . . . .. 147
5.2 Tunneling Current in STM . . . . . . . . . . . . . . . . . . . . . . . . 149
-J3 -J3
5.3 The STM Images of Si(111) x -Ag and -Sb
Surfaces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 151
5.4 The Effect of a Microscopic Structure at the Tip . . . . . . . . 154
5.5 STM Images of Oxygen Chemisorbed Si(OOI) Surfaces . .. 156
5.6 Formation of Atomic Point Contact and
Electron Transmission through Atom Bridges. . . . . . . . . . 158
5.7 Quantum Transport through Atom Bridges. . . . . . . . . . . .. 160
5.8 Frictional-Force Microscopy . . . . . . . . . . . . . . . . . . . . . . . 164
5.9 Tapping-Mode Atomic Force Microscopy . . . . . . . . . . . . . 168
5.10 Theory of Noncontact-Mode Atomic-Force Microscopy 172
5.11 Summary...................................... 177
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Contents ix
Chapter 6
TUNNELING-ELECTRON LUMINESCENCE MICROSCOPY
FOR MULTIFUNCTIONAL AND REAL-SPACE
CHARACTERIZATION OF SEMICONDUCTOR
NANOSTRUCTURES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
6.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 181
6.2 Limitations of Conventional Luminescence Microscopy 182
6.3 Tunneling Electron Luminescence (TL) Microscopy . . . . . 184
6.4 TL Microscopy Using Tip Collection . . . . . . . . . . . . . . . . 186
6.5 Application: Characterization of Semiconductor
Nanostructures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
6.6 Conclusions.................................... 198
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Chapter 7
NEAR-FIELD OPTICAL SPECTROSCOPY OF SINGLE
QUANTUM DOTS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 201
7.1 Introduction......... . . . . . . . . . . . . . . . . . . . . . . . . . .. 201
7.2 Fabrication of Near-Field Fiber Probe. . . . . . . . . . . . . . . . 204
7.3 Fundamental Performance of Near-Field Probe. . . . . . . . . 205
7.4 Low-Temperature PL Spectroscopy of Single QDs . . . . . . 207
7.5 Room-Temperature PL Spectroscopy of Single QDs . . . . . 210
7.6 Time-Resolved PL Spectroscopy of Single QDs . . . . . . . . 211
7.7 Modulated Absorption Spectroscopy of Single QDs . . . . . 214
7.8 Summary...................................... 216
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217
Chapter 8
CHEMICAL V APOR DEPOSITION OF NANOMETRIC
MATERIALS BY OPTICAL NEAR-FIELDS:
TOWARD NANO-PHOTONIC INTEGRATION................ 219
8.1 Introduction.................................... 219
8.2 Principles...................................... 220
8.3 Depositing Zinc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 221
8.4 Depositing Zinc Oxide. . . . . . . . . . . . . . . . . . . . . . . . . . .. 226
8.5 Toward Nano-Photonic Integration. . . . . . . . . . . . . . . . . . 230
8.6 Summary...................................... 232
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 233
x Contents
Chapter 9
NONCONT ACT ATOMIC FORCE MICROSCOPY . . . . . . . . . . . . . 235
9.1 Introduction-Historical Background. . . . . . . . . . . . . . . . 235
9.2 Guidelines for Spatial Resolution. . . . . . . . . . . . . . . . . . . 236
9.3 Problems in AFM Measurement under the Contact mode 241
9.4 Noncontact Atomic Force Microscopy
(Experimental Method) . . . . . . . . . . . . . . . . . . . . . . . . . . . 242
9.5 Experimental Results on Compound Semiconductors . . . .. 245
9.6 Experimental Results on Si Semiconductors . . . . . . . . . . . 252
9.7 Noncontact AFM Imaging on an Ag(lll) Surface . . . . . .. 264
9.8 Simultaneous Imaging of Topography and
Electrostatic Force on n+-GaAs(l1O) . . . . . . . . . . . . . . . . . 267
9.9 Summary...................................... 274
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 275
Chapter 10
CORRELATION BETWEEN INTERFACE STATES AND
STRUCTURES DEDUCED FROM ATOMIC-SCALE
SURFACE ROUGHNESS IN ULTRATHIN Si0 /Si SySTEM..... 277
2
10.1 Introduction.................................... 277
10.2 Experimental Details. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 277
10.3 SiO/Si Interface Structures . . . . . . . . . . . . . . . . . . . . . . .. 278
10.4 Oxidation-induced Atomic-scale Surface Roughness . . . .. 285
10.5 Interface Electronic States and Their Correlation with
Interface Structures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 290
10.6 Valence Band Discontinuities at and near the SiO/Si
Interface. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 291
10.7 Summary...................................... 295
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 296
Chapter 11
CHARACTERIZATION OF MOLECULAR FILMS BY
A SCANNING PROBE MICROSCOPE . . . . . . . . . . . . . . . . . . . . . .. 299
11.1 Local Area Visualization of Organic Ultra-Thin Films
by the Scanning Probe Microscope . . . . . . . . . . . . . . . . . . 299
11.2 Application to Anchoring Phase Studies . . . . . . . . . . . . . . 305
11.3 Local Area Characterization of Organic Ultra-Thin Films
by a Scanning Probe Microscope . . . . . . . . . . . . . . . . . . .. 312
11.4 Application to Molecular Devices . . . . . . . . . . . . . . . . . . . 320
References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 326
Index. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 329