OPA838 1-mA, 300-MHz Gain Bandwidth, Voltage-Feedback Op Amp datasheet PDF
Preview OPA838 1-mA, 300-MHz Gain Bandwidth, Voltage-Feedback Op Amp datasheet
Product Order Technical Tools & Support & Folder Now Documents Software Community OPA838 SBOS867B–AUGUST2017–REVISEDOCTOBER2018 OPA838 1-mA, 300-MHz Gain Bandwidth, Voltage-Feedback Op Amp 1 Features 3 Description • GainBandwidthProduct:300MHz The OPA838 decompensated voltage feedback 1 operational amplifier provides a high 300-MHz gain • Very-Low(Trimmed)SupplyCurrent:950 µA bandwidth product with 1.8-nV/√Hz input noise • Bandwidth:90MHz(AV=6V/V) voltage, requiring only a trimmed 0.95-mA supply • HighFull-PowerBandwidth:45MHz,4V current. These features combine to provide an PP extremely power-efficient solution for photodiode • NegativeRailInput,Rail-to-RailOutput transimpedance designs and high-voltage gain • Single-SupplyOperatingRange:2.7Vto5.4V stages, which require the lowest input voltage noise • 25°CInputOffset: ±125 µV(Maximum) insignalreceiverapplications. • InputOffsetVoltageDrift: <±1.6 µV/°C Operating at the minimum recommended (Maximum) noninverting gain of 6 V/V results in a 90-MHz, –3-dB • InputVoltageNoise:1.8nV/√Hz(>200Hz) bandwidth. Extremely low input noise and offset voltage make the OPA838 particularly suitable for • InputCurrentNoise:1pA/√Hz(>2000Hz) high gains. Even at a DC-coupled gain of 1000 V/V, a • <1-µAShutdownCurrentforPowerSavings 300-kHz signal bandwidth is available with a maximumoutput offsetvoltageof±125mV. 2 Applications The single-channel OPA838 is available in 6-pin • Low-PowerTransimpedanceAmplifiers SOT-23 and SC70 packages with a power shutdown • Low-NoiseHigh-GainStages featureanda5-pinSC70package. • 12-Bitto16-BitLow-PowerSARADCDrivers DeviceInformation(1) • High-GainActiveFilterDesigns PARTNUMBER PACKAGE BODYSIZE(NOM) • UltrasonicFlowMeters SOT-23(6) 2.90mm×1.60mm OPA838 SC70(5) 2.00mm×1.25mm SC70(6) 2.00mm×1.25mm (1) Forallavailablepackages,seethepackageoptionaddendum attheendofthedatasheet. SPACE SPACE Single3-V Supply, < 3-mWPhotodiodeAmplifierWith <1.1-pA/√HzTotalInput-ReferredCurrentNoiseand100-kΩGainWithOverall1-MHzSSBW 1 pF Large Area Photodetector 100 k(cid:13) With 100-pF Capacitance VCC = 3 V – 73.2 (cid:13) DCDirueirocrdetieno tn 100 pF nF (cid:13)k + 2.2 nFVOUT1-MHz 00 00 Post Filter 1 1 -VBIAS 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectualpropertymattersandotherimportantdisclaimers.PRODUCTIONDATA. OPA838 SBOS867B–AUGUST2017–REVISEDOCTOBER2018 www.ti.com Table of Contents 1 Features.................................................................. 1 8.2 FunctionalBlockDiagram.......................................20 2 Applications........................................................... 1 8.3 FeatureDescription.................................................20 3 Description............................................................. 1 8.4 DeviceFunctionalModes........................................24 8.5 PowerShutdownOperation....................................27 4 RevisionHistory..................................................... 2 9 ApplicationandImplementation........................ 28 5 DeviceComparisonTable..................................... 4 9.1 ApplicationInformation............................................28 6 PinConfigurationandFunctions......................... 4 10 PowerSupplyRecommendations..................... 36 7 Specifications......................................................... 5 11 Layout................................................................... 37 7.1 AbsoluteMaximumRatings......................................5 11.1 LayoutGuidelines.................................................37 7.2 ESDRatings..............................................................5 11.2 LayoutExample....................................................37 7.3 RecommendedOperatingConditions.......................5 12 DeviceandDocumentationSupport................. 38 7.4 ThermalInformation..................................................5 7.5 ElectricalCharacteristics:V =5V...........................6 12.1 DeviceSupport ....................................................38 S 7.6 ElectricalCharacteristics:V =3V...........................8 12.2 DocumentationSupport........................................38 S 7.7 TypicalCharacteristics:V =5V............................10 12.3 Trademarks...........................................................39 S 7.8 TypicalCharacteristics:V =3V............................13 12.4 ElectrostaticDischargeCaution............................39 S 7.9 TypicalCharacteristics:OverSupplyRange..........16 12.5 Glossary................................................................39 8 DetailedDescription............................................ 20 13 Mechanical,Packaging,andOrderable Information........................................................... 39 8.1 Overview.................................................................20 4 Revision History NOTE:Pagenumbersforpreviousrevisionsmaydifferfrompagenumbersinthecurrentversion. ChangesfromRevisionA(February2018)toRevisionB Page • Changed<5-µAShutdownCurrentto<1-µAShutdownCurrentinFeaturessection......................................................... 1 • Changedvalueofcommon-modeanddifferential-modeinputimpedanceinElectricalCharacterictics:V =5V S andElectricalCharacterictics:V =3Vtables....................................................................................................................... 7 S • Changedvalueofpower-downquiescentcurrentinElectricalCharacteristics:V =5VandElectrical S Characteristics:V =3Vtables.............................................................................................................................................. 7 S • Changed5µAto1µAinOverviewsection ........................................................................................................................ 20 • Changedstandbycurrentfrom5µAto1µAinPower-DownOperationsection................................................................. 21 • Changedcommon-modeinputcapacitancefrom1.3pFto1pFinTrade-OffsinSelectingTheFeedbackResistor Valuesection........................................................................................................................................................................ 22 • Changed1+6.3/1.2=6.25V/V,addingthe1.3-pFdevicecommon-modecapacitanceto1+6/1.2=6V/V, addingthe1-pFdevicecommon-modecapacitanceinTrade-OffsinSelectingTheFeedbackResistorValuesection.....22 • Changed2µAto0.1µAand5µAto1µAinlastsentenceofPowerShutdownOperationsection.................................. 27 • ChangedPowerSupplyRecommendationsandThermalNotestitletoPowerSupplyRecommendations .......................36 ChangesfromOriginal(August2017)toRevisionA Page • AddedOPA837totheDeviceComparisontable................................................................................................................... 4 • ChangedDeviceComparisontablenote................................................................................................................................ 4 • ChangedformatofpinnamesinpinoutdrawingsinPinConfigurationandFunctionssection ............................................ 4 • AddedDCKtopinoutdescriptionin6-pinSOT-23andSC70pinoutdrawing....................................................................... 4 • ChangedI/Ocolumnheaderto"TYPE"inPinConfigurationandFunctionssection ........................................................... 4 • AddedtablenotetotabletodefinepintypesinPinConfigurationandFunctionssection ................................................... 4 • AddedtablenotetoAbsoluteMaximumRatingstable ......................................................................................................... 5 • Changed bandwidthfor0.1-dBflatnesstestconditionfromV =2V andG=10toV =200mV andG=6 OUT PP OUT PP intheElectricalCharacteristics:V =5Vtable...................................................................................................................... 6 S • AddedvaluesforV andV parametersatT =-40to+125°CinElectricalCharacteristics:V =5Vtable....................7 OH OL A S 2 SubmitDocumentationFeedback Copyright©2017–2018,TexasInstrumentsIncorporated ProductFolderLinks:OPA838 OPA838 www.ti.com SBOS867B–AUGUST2017–REVISEDOCTOBER2018 • Changedtypicalbandwidthfor0.1-dBflatnessfrom5MHzto9MHzinElectricalCharacteristics:V =3Vtable.............8 S • Changedbandwidthfor0.1-dBflatnesstestconditionsfromV =2V andG=10toV =200mV andG=6 OUT PP OUT PP inElectricalCharacteristics:V =3Vtable .......................................................................................................................... 8 S • AddedvaluesforV andV parametersatT =-40to+125°C inElectricalCharacteristics:V =3Vtable...................9 OH OL A S • ChangedV testconditionfrom20mVto200mVinFigure5............................................................................................ 10 O • ChangedV testconditionfrom20mVto200mVinFigure6............................................................................................ 10 O • ChangedtestconditionsfromV =2V ,R =0Ω,G=1V/VtoR =1kΩ,R =200Ω,R =2kΩ,G=6V/Vin OUT PP F F G L TypicalCharacteristics:V =3Vsection............................................................................................................................. 13 S • ChangedV testconditionfrom20mVto200mVinFigure23.......................................................................................... 13 O • ChangedV testconditionfrom20mVto200mVinFigure24.......................................................................................... 13 O • AddedconditionstatementtoTypicalCharacteristics:OverSupplyRange ....................................................................... 16 • ChangedY-axislabelfrom"DisableandVo(Bipolarsupplies)"to"DisableandV (BipolarSupplies,Volts)"in OUT Figure51............................................................................................................................................................................... 17 • ChangedY-axislabelfrom"PDandOutputVoltages"to"DisableandV (BipolarSupplies,Volts)"inFigure52........17 OUT • Deleted5-VsupplyandchangedtheY-axislabelofFigure57 .......................................................................................... 18 • Changedspecificationloadvaluefrom1-kΩto2-kΩinOutputVoltageRangesection...................................................... 21 • ChangedfirstparagraphtocorrectpowerdownlogicinPower-DownOperationsection................................................... 21 • ChangedimagereferencesinPower-DownOperationsection........................................................................................... 21 • ChangedV1valuefrom2.5Ωto2.5VinFigure64............................................................................................................ 22 • ChangedV2valuefrom2.5Ωto–2.5VinFigure64.......................................................................................................... 22 • ChangedV1valuefrom2.5Ωto2.5V,changedV2valuefrom2.5Ωto–2.5V,andchangedR toR in OUT LOAD Figure66 ............................................................................................................................................................................. 23 • ChangedV inputsignalfrom±.035V to±0.35V inFigure68................................................................................ 24 OUT OUT IN • ChangedV1valuefrom4.5Ωto4.5VinFigure70............................................................................................................ 25 • ChangedV togroundinFigure70 ................................................................................................................................... 25 EE • ChangedV1valuefrom3Ωto3VinFigure72.................................................................................................................. 26 • UpdatedSingle-SupplyOpAmpDesignTechniquesapplicationreportlinkinDeviceFunctionalModessection.............27 • Changed"Cs"and"Cf"to"C "and"C "inApplicationInformationsection........................................................................ 34 S F • UpdatedTransimpedanceConsiderationsforHigh-SpeedAmplifiersapplicationreportlinkinDetailedDesign Proceduresection................................................................................................................................................................. 35 • ChangedEVMguidelinkinLayoutGuidelinessection........................................................................................................ 37 Copyright©2017–2018,TexasInstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:OPA838 OPA838 SBOS867B–AUGUST2017–REVISEDOCTOBER2018 www.ti.com 5 Device Comparison Table(1) PARTNUMBER GBP(MHz) (mA,5M-VAXIQIMUM INVPOULTTNAOGIESE 2-VPPTHD RAIL-TO-RAIL DUALS (dBc,100kHz) INPUT/OUTPUT 25°C) (nV/√Hz) OPA838 300 0.99 1.9 –110 Negativein/out None OPA837 50 0.625 4.7 –120 Negativein/out OPA2837 OPA835 30 0.35 9.3 –100 Negativein/out OPA2835 OPA836 110 1 4.8 –115 Negativein/out OPA2836 LMP7717 88 1.4 5.8 — Negativein/out LMP7718 OPA830 100 4.7 9.5 –105 Negativein/out OPA2830 THS4281 38 0.93 12.5 12.5 In/out None (1) ForacompleteselectionofTIhigh-speedamplifiers,visitwww.ti.com 6 Pin Configuration and Functions DBVandDCKPackage DCKPackage 6-PinSOT-23andSC70 5-PinSC70 TopView TopView VOUT 1 6 VS+ VOUT 1 5 VS+ VS- 2 5 PD VS- 2 VIN+ 3 4 VIN- VIN+ 3 4 VIN- PinFunctions PIN SOT-23and TYPE(1) DESCRIPTION NAME SC70 SC70 Amplifierpowerdown. PD 5 — I/O Low=disabled,high=normaloperation(pinmustbedriven). VIN– 4 4 I/O Invertinginputpin VIN+ 3 3 I/O Noninvertinginputpin VOUT 1 1 I/O Outputpin VS– 2 2 P Negativepower-supplypin VS+ 6 5 P Positivepower-supplyinput (1) I=input,O=output,andP=power. 4 SubmitDocumentationFeedback Copyright©2017–2018,TexasInstrumentsIncorporated ProductFolderLinks:OPA838 OPA838 www.ti.com SBOS867B–AUGUST2017–REVISEDOCTOBER2018 7 Specifications 7.1 Absolute Maximum Ratings overoperatingfree-airtemperaturerange(unlessotherwisenoted)(1) MIN MAX UNIT Supplyvoltage 5.5 V V toV S– S+ Supplyturnon,offmaximumdV/dT(2) 1 V/µs V Inputvoltage V –0.5 V +0.5 V I S– S+ V Differentialinputvoltage ±1 V ID I Continuousinputcurrent ±10 mA I I Continuousoutputcurrent(3) ±20 mA O Continuouspowerdissipation SeeThermalInformation T Maximumjunctiontemperature 150 °C J T Operatingfree-airtemperature –40 125 °C A T Storagetemperature –65 150 °C stg (1) StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestressratings only,whichdonotimplyfunctionaloperationofthedeviceattheseoranyotherconditionsbeyondthoseindicatedunderRecommended OperatingConditions.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. (2) Stayingbelowthis±supplyturn-onedgeratepreventstheedge-triggeredESDabsorptiondeviceacrossthesupplypinsfromturning on. (3) Long-termcontinuousoutputcurrentforelectromigrationlimits. 7.2 ESD Ratings VALUE UNIT Humanbodymodel(HBM),perANSI/ESDA/JEDECJS-001(1) ±1500 V Electrostaticdischarge V (ESD) Charged-devicemodel(CDM),perJEDECspecificationJESD22-C101(2) ±1000 (1) JEDECdocumentJEP155statesthat500-VHBMallowssafemanufacturingwithastandardESDcontrolprocess. (2) JEDECdocumentJEP157statesthat250-VCDMallowssafemanufacturingwithastandardESDcontrolprocess. 7.3 Recommended Operating Conditions overoperatingfree-airtemperaturerange(unlessotherwisenoted) MIN NOM MAX UNIT V Single-supplyvoltage 2.7 5 5.4 V S+ T Ambienttemperature –40 25 125 °C A 7.4 Thermal Information OPA838 DBV DCK DCKS THERMALMETRIC(1) UNIT (SOT-23) (SC70) (SC70) 6PINS 5PINS 6PINS RθJA Junction-to-ambientthermalresistance 194 203 189 °C/W RθJCtop Junction-to-case(top)thermalresistance 129 152 150 °C/W RθJB Junction-to-boardthermalresistance 39 76 79 °C/W ψJT Junction-to-topcharacterizationparameter 26 58 61 °C/W ψJB Junction-to-boardcharacterizationparameter 39 76 79 °C/W (1) Formoreinformationabouttraditionalandnewthermalmetrics,seetheSemiconductorandICPackageThermalMetricsapplication report. Copyright©2017–2018,TexasInstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:OPA838 OPA838 SBOS867B–AUGUST2017–REVISEDOCTOBER2018 www.ti.com 7.5 Electrical Characteristics: V = 5 V S atV =5V,V =0V,R =1kΩ,R =200Ω,R =2kΩ,G=6V/V,inputandoutputreferencedtomidsupply,andT ≈ S+ S– F G L A 25°C, (unlessotherwisenoted) TEST PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1) ACPERFORMANCE VOUT=20mVPP,G=6,(peaking<4dB) 75 90 C SSBW Small-signalbandwidth VOUT=20mVPP,G=10,RF=1.6kΩ 50 MHz C VOUT=20mVPP,G=100,RF=16.9kΩ 3 C GBP Gain-bandwidthproduct VOUT=20mVPP,G=100 240 300 MHz C LSBW Large-signalbandwidth VOUT=2VPP,G=6 45 MHz C Bandwidthfor0.1-dBflatness VOUT=200mVPP,G=6 10 MHz C SR Slewrate FromLSBW(2) 250 350 V/µs C Overshoot,undershoot VOUT=2-Vstep,G=6,inputtR=12ns 1% 2% C tR,tF Rise,falltime VinOpUuTt=tR2=-V12stnesp,G=6,RL=2kΩ, 12.5 13 ns C Settlingtimeto0.1% VOUT=2-Vstep,G=6,inputtR=12ns 30 ns C Settlingtimeto0.01% VOUT=2-Vstep,G=6,inputtR=12ns 40 ns C HD2 Second-orderharmonicdistortion f=100kHz,VO=4VPP,G=6(seeFigure74) –110 dBc C HD3 Third-orderharmonicdistortion f=100kHz,VO=4VPP,G=6(seeFigure74) –120 dBc C Inputvoltagenoise f>1kHz 1.8 nV/√Hz C Voltagenoise1/fcornerfrequency 100 Hz C Inputcurrentnoise f>100kHz 1 pA/√Hz C Currentnoise1/fcornerfrequency 7 kHz C Overdriverecoverytime G=6,2xoutputoverdrive,DC-coupled 50 ns C Closed-loopoutputimpedance f=1MHz,G=6 0.3 Ω C DCPERFORMANCE AOL Open-loopvoltagegain VO=±2V,RL=2kΩ 120 125 dB A TA≈25°C –125 ±15 125 A TA=0°Cto70°C –165 ±15 200 B Input-referredoffsetvoltage µV TA=–40°Cto85°C –230 ±15 220 B TA=–40°Cto125°C –230 ±15 285 B Inputoffsetvoltagedrift(3) TA=–40°Cto125°C(4) –1.6 ±0.4 1.6 µV/°C B TA≈25°C 0.7 1.5 2.8 A Inputbiascurrent(5) TA=0°Cto70°C .2 1.5 3.5 µA B TA=–40°Cto85°C .2 1.5 3.7 B TA=–40°Cto125°C .2 1.5 4.4 B Inputbiascurrentdrift(3) TA=–40°Cto125°C 4.5 7.8 17 nA/°C B TA≈25°C –70 ±20 70 A TA=0°Cto70°C –83 ±20 93 B Inputoffsetcurrent nA TA=–40°Cto85°C –105 ±20 100 B TA=–40°Cto125°C –105 ±20 120 B Inputoffsetcurrentdrift(3) TA=–40°Cto125°C –500 ±40 500 pA/°C B (1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C,overtemperaturelimitsbycharacterizationand simulation;(B)Nottestedinproduction,limitssetbycharacterizationandsimulation;(C)Typicalvalueonlyforinformation. (2) Thisslewrateistheaverageoftherisingandfallingtimeestimatedfromthelarge-signalbandwidthas:(0.8×V /√2)×2π×f PEAK –3dB wherethisf isthetypicalmeasured4-V bandwidthatgainsof6V/V. –3dB PP (3) Inputoffsetvoltagedrift,inputbiascurrentdrift,andinputoffsetcurrentdriftareaveragevaluescalculatedbytakingdataattheend points,computingthedifference,anddividingbythetemperaturerange. (4) Inputoffsetvoltagedrift,inputbiascurrentdrift,andinputoffsetcurrentdrifttypicalspecificationsaremean±1σcharacterizedbythefull temperaturerangeend-pointdata.Maximumdriftspecificationsaresetbythemin,maxpackagedtestrangeonthewafer-level screeneddrift.Driftisnotspecifiedbythefinalautomatedtestequipment(ATE)orbyQAsampletesting. (5) Currentisconsideredpositiveoutofthepin. 6 SubmitDocumentationFeedback Copyright©2017–2018,TexasInstrumentsIncorporated ProductFolderLinks:OPA838 OPA838 www.ti.com SBOS867B–AUGUST2017–REVISEDOCTOBER2018 Electrical Characteristics: V = 5 V (continued) S atV =5V,V =0V,R =1kΩ,R =200Ω,R =2kΩ,G=6V/V,inputandoutputreferencedtomidsupply,andT ≈ S+ S– F G L A 25°C, (unlessotherwisenoted) TEST PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1) INPUT TA≈25°C,CMRR>92dB VS––0.2 VS––0 A Common-modeinputrange,low V TA=–40°Cto125°C,CMRR>92dB VS––0 B TA≈25°C,CMRR>92dB VS+–1.3 VS+–1.2 A Common-modeinputrange,high V TA=–40°Cto125°C,CMRR>92dB VS+–1.3 B CMRR Common-moderejectionratio 95 105 dB A Inputimpedancecommon-mode 35||1 MΩ||pF C Inputimpedancedifferentialmode 30||1.3 kΩ||pF C OUTPUT TA≈25°C,G=6 VS–+0.05 VS–+0.1 A VOL Outputvoltage,low V TA=–40°Cto125°C,G=6 VS–+0.05 VS–+0.1 B TA≈25°C,G=6 VS+–0.1 VS+–0.05 A VOH Outputvoltage,high V TA=–40°Cto125°C,G=6 VS+–0.2 VS+–0.1 B Maximumcurrentintoaresistive load TA≈25°C,±1.53Vinto41.3Ω,VIO<2mV ±35 ±40 mA A TA≈25°C,±1.81Vinto70.6Ω,AOL>80dB ±25 ±28 A Linearcurrentintoaresistiveload TA=–40°Cto125°C,±1.58Vinto70.6Ω,AOL ±22 ±25 mA B >80dB DCoutputimpedance G=6 0.02 Ω C POWERSUPPLY Specifiedoperatingvoltage 2.7 5 5.4 V B TA≈25°C(6) 913 960 993 A Quiescentoperatingcurrent µA TA=–40°Cto125°C 700 960 1330 B Quiescentcurrenttemperature dIq/dT coefficient TA=–40°Cto125°C 2.6 3 3.4 µA/°C B Positivepower-supplyrejection +PSRR 98 110 dB A ratio Negativepower-supplyrejection –PSRR 93 105 dB A ratio POWERDOWN(PinMustbeDriven,SOT23-6andSC70-6) Enablevoltagethreshold SpecifiedonaboveVS–+1.5V 1.5 V A Disablevoltagethreshold SpecifiedoffbelowVS–+0.55V 0.55 V A Disablepinbiascurrent PD=VS–toVS+ –50 20 50 nA A Power-downquiescentcurrent PD=0.55V 0.1 1 µA A Turnontimedelay TimefromPD=hightoVOUT=90%offinal 1.7 usec C value Turnofftimedelay TimefromPD=lowtoVOUT=10%oforiginal 100 ns C value (6) Thetypicalspecificationisat25°CT.TheminimumandmaximumlimitsareexpandedfortheATEtoaccountforanambientrange J from22°Cto32°Cwitha4-µA/°Ctemperaturecoefficientonthesupplycurrent. Copyright©2017–2018,TexasInstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:OPA838 OPA838 SBOS867B–AUGUST2017–REVISEDOCTOBER2018 www.ti.com 7.6 Electrical Characteristics: V = 3 V S atV =3V,V =0V,R =1kΩ,R =200Ω,R =2kΩ,G=6V/V,inputandoutputreferencedtomidsupply,andT ≈ S+ S– F G L A 25°C,(unlessotherwisenoted) TEST PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1) ACPERFORMANCE VOUT=20mVPP,G=6(peaking<4dB) 70 86 C SSBW Small-signalbandwidth VOUT=20mVPP,G=10,RF=1.6kΩ 50 MHz C VOUT=20mVPP,G=100,RF=16.9kΩ 3 C GBP Gain-bandwidthproduct VOUT=20mVPP,G=100 240 300 MHz C LSBW Large-signalbandwidth VOUT=2VPP,G=6 45 MHz C Bandwidthfor0.1-dBflatness VOUT=200mVPP,G=6 9 MHz C SR Slewrate FromLSBW(2) 250 350 V/µs C Overshoot,undershoot VOUT=1-Vstep,G=6,inputtR=6ns 2% 4% C tR,tF Rise,falltime VOUT=1-Vstep,G=6,inputtR=6ns 6.3 7 ns C Settlingtimeto0.1% VOUT=1-Vstep,G=6,inputtR=6ns 30 ns C Settlingtimeto0.01% VOUT=1-Vstep,G=6,inputtR=6ns 40 ns C HD2 Second-orderharmonicdistortion f=100kHz,VO=2VPP,G=6(seeFigure74) –108 dBc C HD3 Third-orderharmonicdistortion f=100kHz,VO=2VPP,G=6(seeFigure74) –125 dBc C Inputvoltagenoise f>1kHz 1.8 nV/√Hz C Voltagenoise1/fcornerfrequency 100 Hz C Inputcurrentnoise f>100kHz 1.0 pA/√Hz C Currentnoise1/fcornerfrequency 7 kHz C Overdriverecoverytime G=6,2xoutputoverdrive,DC-coupled 50 ns C Closed-loopoutputimpedance f=1MHz,G=6 0.3 Ω C DCPERFORMANCE AOL Open-loopvoltagegain VO=±1V,RL=2kΩ 110 125 dB A TA≈25°C –125 ±15 125 A TA=0°Cto70°C –165 ±15 200 B Input-referredoffsetvoltage µV TA=–40°Cto85°C –230 ±15 220 B TA=–40°Cto125°C –230 ±15 285 B Inputoffsetvoltagedrift(3) TA=–40°Cto125°C(4) –1.6 ±0.4 1.6 µV/°C B TA≈25°C .7 1.5 2.8 A Inputbiascurrent(5) TA=0°Cto70°C .2 1.5 3.5 µA B TA=–40°Cto85°C .2 1.5 3.7 B TA=–40°Cto125°C .2 1.5 4.4 B Inputbiascurrentdrift(3) TA=–40°Cto125°C 4.5 7.8 17 nA/°C B TA≈25°C –70 ±20 70 A TA=0°Cto70°C –83 ±20 93 B Inputoffsetcurrent nA TA=–40°Cto85°C –105 ±20 100 B TA=–40°Cto125°C –105 ±13 120 B Inputoffsetcurrentdrift(3) TA=–40°Cto125°C –500 ±20 500 pA/°C B (1) Testlevels(allvaluessetbycharacterizationandsimulation):(A)100%testedat25°C,overtemperaturelimitsbycharacterizationand simulation;(B)Nottestedinproduction,limitssetbycharacterizationandsimulation;(C)Typicalvalueonlyforinformation. (2) Thisslewrateistheaverageoftherisingandfallingtimeestimatedfromthelarge-signalbandwidthas:(0.8×V /√2)×2π×f PEAK –3dB wherethisf isthetypicalmeasured2-V bandwidthatgainsof6V/V. –3dB PP (3) Inputoffsetvoltagedrift,inputbiascurrentdrift,andinputoffsetcurrentdriftareaveragevaluescalculatedbytakingdataattheend points,computingthedifference,anddividingbythetemperaturerange. (4) Inputoffsetvoltagedrift,inputbiascurrentdrift,andinputoffsetcurrentdrifttypicalspecificationsaremean±1σcharacterizedbythefull temperaturerangeend-pointdata.Maximumdriftspecificationsaresetbythemin,maxpackagedtestrangeonthewafer-level screeneddrift.Driftisnotspecifiedbythefinalautomatedtestequipment(ATE)orbyQAsampletesting. (5) Currentisconsideredpositiveoutofthepin. 8 SubmitDocumentationFeedback Copyright©2017–2018,TexasInstrumentsIncorporated ProductFolderLinks:OPA838 OPA838 www.ti.com SBOS867B–AUGUST2017–REVISEDOCTOBER2018 Electrical Characteristics: V = 3 V (continued) S atV =3V,V =0V,R =1kΩ,R =200Ω,R =2kΩ,G=6V/V,inputandoutputreferencedtomidsupply,andT ≈ S+ S– F G L A 25°C,(unlessotherwisenoted) TEST PARAMETER TESTCONDITIONS MIN TYP MAX UNIT LEVEL(1) INPUT TA≈25°C,CMRR>92dB VS––0.2 VS––0 A Common-modeinputrange,low V TA=–40°Cto125°C,CMRR>92dB VS––0 B TA≈25°C,CMRR>92dB VS+–1.3 VS+–1.2 A Common-modeinputrange,high V TA=–40°Cto125°C,CMRR>92dB VS+–1.3 B CMRR Common-moderejectionratio 95 105 dB A Inputimpedancecommon-mode 55||1.1 MΩ||pF C Inputimpedancedifferentialmode 30||1.3 kΩ||pF C OUTPUT TA≈25°C,G=6 VS–+0.05 VS–+0.1 A VOL Outputvoltage,low V TA=–40°Cto125°C,G=6 VS–+0.1 VS–+0.2 B TA≈25°C,G=6 VS+–0.1 VS+–0.05 A VOH Outputvoltage,high V TA=–40°Cto125°C,G=6 VS+–0.2 VS+–0.1 B Maximumcurrentintoaresistive load TA≈25°C,±0.77Vinto26.7Ω,VIO<2mV ±28 ±30 mA A TA≈25°C,±0.88Vinto37Ω,AOL>70dB ±23 ±25 A Linearcurrentintoaresistiveload TA=–40°Cto125°C,±0.76Vinto37Ω, ±20 ±23 mA B AOL>70dB DCoutputimpedance G=6 0.02 Ω C POWERSUPPLY Specifiedoperatingvoltage 2.7 5 5.4 V B TA≈25°C(6) 890 930 970 A Quiescentoperatingcurrent µA TA=–40°Cto125°C 680 930 1290 B Quiescentcurrenttemperature dIq/dT coefficient TA=–40°Cto125°C 2.2 2.7 3.2 µA/°C B Positivepower-supplyrejection +PSRR 95 110 dB A ratio Negativepower-supplyrejection –PSRR 90 105 dB A ratio POWERDOWN(PinMustbeDriven,SOT23-6andSC70-6) Enablevoltagethreshold SpecifiedonaboveVS–+1.5V 1.5 V A Disablevoltagethreshold Specifiedoff belowVS–+0.55V 0.55 V A Disablepinbiascurrent PD=VS–toVS+ –50 20 50 nA A Power-downquiescentcurrent PD=0.55V 0.1 1 µA A Turnontimedelay TimefromPD=hightoVOUT=90%offinal 3.5 usec C value Turnofftimedelay TimefromPD=lowtoVOUT=10%oforiginal 100 ns C value (6) Thetypicalspecificationisat25°CT.TheminimumandmaximumlimitsareexpandedfortheATEtoaccountforanambientrange J from22°Cto32°Cwitha4-µA/°Ctemperaturecoefficientonthesupplycurrent. Copyright©2017–2018,TexasInstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:OPA838 OPA838 SBOS867B–AUGUST2017–REVISEDOCTOBER2018 www.ti.com 7.7 Typical Characteristics: V = 5 V S V =5V,V =0V,R =1kΩ,R =200Ω,R =2kΩ,G=6V/V,inputandoutputreferencedtomidsupply,T ≈25°C S+ S– F G L A (unlessotherwisenoted) 3 6 0 3 B) B) 0 Gain (d -3 Gain (d -3 d -6 d e e aliz aliz -6 m -9 m Nor Gain = 6 V/V Nor -9 Gain = (cid:16)6 V/V -12 Gain = 10 V/V Gain = (cid:16)10 V/V Gain = 20 V/V -12 Gain = (cid:16)20 V/V Gain = 50 V/V Gain = (cid:16)50 V/V -15 -15 100m 1 10 100 100m 1 10 100 Frequency (MHz) Frequency (MHz) D001 SeeFigure74andTable1(VO=20mVPP,RLOAD=2kΩ) SeeFigure75andTable2(VO=20mVPP,RLOAD=2kΩ) Figure1.NoninvertingSmall-SignalFrequencyResponse Figure2.InvertingSmall-SignalFrequencyResponsevs vsGain Gain 18 18 15 15 12 12 B) B) d d n ( 9 n ( 9 ai ai G G 6 6 VO = 200 mVPP VO = 200 mVPP VO = 500 mVPP VO = 500 mVPP 3 VO = 1 VPP 3 VO = 1 VPP VO = 2 VPP VO = 2 VPP VO = 4 VPP VO = 4 VPP 0 0 100m 1 10 100 100m 1 10 100 Frequency (MHz) Frequency (MHz) Gain=6V/V,R =2kΩ Gain=–6V/V,R =2kΩ LOAD LOAD Figure3.NoninvertingLarge-SignalBandwidthvsV Figure4.InvertingLarge-SignalBandwidthvsV OPP OPP 1.2 1.6 1 1.4 1.2 0.8 1 n (dB) 00..46 n (dB) 000...468 Gai 0.2 Gai 0.2 d 0 d 0 malize --00..42 malize --00..42 or or -0.6 N -0.6 N -0.8 -0.8 Gain = 6 V/V -1 Gain = (cid:16)6 V/V Gain = 10 V/V -1.2 Gain = (cid:16)10 V/V -1 Gain = 20 V/V -1.4 Gain = (cid:16)20 V/V -1.2 -1.6 100m 1 10 100 100m 1 10 100 Frequency (MHz) Frequency (MHz) D005 SeeFigure74andTable1(VO=200mVPP,RLOAD=2kΩ) SeeFigure75andTable2(VO=200mVPP;RLOAD=2kΩ) Figure5.NoninvertingResponseFlatnessvsGain Figure6.InvertingResponseFlatnessvsGain 10 SubmitDocumentationFeedback Copyright©2017–2018,TexasInstrumentsIncorporated ProductFolderLinks:OPA838
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