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On-Chip Microwave Quantum Hall Circulator 6 1 A. C. Mahoney,1,2∗ J. I. Colless,1,2∗ S. J. Pauka,1,2 J. M. Hornibrook1,2, 0 2 J. D. Watson3,4, G. C. Gardner4,5, M. J. Manfra3,4,5, A. C. Doherty1, and D. J. Reilly1,2† n a J 1ARCCentreofExcellenceforEngineeredQuantumSystems, 4 SchoolofPhysics,TheUniversityofSydney,Sydney,NewSouthWales2006,Australia. ] ll 2 MicrosoftStationQSydney,TheUniversityofSydney,Sydney,NewSouthWales2006,Australia. a h 3DepartmentofPhysicsandAstronomy,PurdueUniversity,WestLafayette,Indiana47907,USA. - s 4BirckNanotechnologyCenter,SchoolofMaterialsEngineeringandSchoolofElectrical e m andComputerEngineering,PurdueUniversity,WestLafayette,Indiana47907,USA. . t 5MicrosoftStationQPurdue,PurdueUniversity,WestLafayette,Indiana47907,USA. a m - d ∗Theseauthorscontributedequallytothiswork. n o †Towhomcorrespondenceshouldbeaddressed;E-mail: [email protected] c [ 1 Circulatorsarenon-reciprocalcircuitelementsintegraltotechnologiesinclud- v 4 ing radar systems, microwave communication transceivers, and the readout 3 6 of quantum information devices. Their non-reciprocity arises from the in- 0 0 terference of microwaves over the centimetre-scale of the signal wavelength . 1 0 in the presence of bulky magnetic media that break time-reversal symmetry. 6 1 Here we realize a completely passive on-chip microwave circulator with size : v 1/1000th the wavelength by exploiting the chiral, ‘slow-light’ response of a i X 2-dimensional electron gas (2DEG) in the quantum Hall regime. For an in- r a tegrated GaAs device with 330 µm diameter and ∼ 1 GHz centre frequency, a non-reciprocity of 25 dB is observed over a 50 MHz bandwidth. Further- more, the direction of circulation can be selected dynamically by varying the magnetic field, an aspect that may enable reconfigurable passive routing of microwavesignalson-chip. 1 Miniaturized, non-reciprocal devices are currently of broad interest for enabling new appli- cations in acoustics [1], photonics [2, 3], transceiver technology [4], and in the regime of near quantum-limitedmeasurement[5,6,7,8,9],wheretheyareneededtoisolatequbitsfromtheir noisy readout circuits. Since the 1950s, passive circuit elements exhibiting non-reciprocity at microwave frequencies have been implemented using bulky magnetic devices that are compa- rable in scale to the centimetre wavelength of signals in their operating band. The footprint of thesecomponentsposesamajorlimitationtointegratingentiresystemsonachip,suchaswhat isrequired,forinstance,toscale-upquantumcomputingtechnology. A seemingly obvious means of realizing non-reciprocity on a semiconductor chip is to use theHalleffect,whereanexternalmagneticfieldbreaksthetimereversalsymmetryofelectrical transport [10]. Hall-based devices were ruled out in 1954 however [11], since near the elec- trical contacts, where the current and voltage are collinear, dissipation is so significant that the usefulness of this approach is greatly limited. This dissipative mechanism has an analog in the quantumHallregimewherethetwo-terminalresistanceofadeviceisalwaysfiniteoverascale of the inelastic scattering length as carriers transition from their contacts to the dissipationless, one-dimensional (1D) edge-states that support transport [12]. Recently, Viola and DiVincenzo [9]haveproposedameansofaddressingthelimitationimposedby2-terminaldissipation,sug- gesting the possibility of coupling microwave signals to the edge of a quantum Hall device reactively, without using traditional ohmic contacts. In a geometry where the signal ports of thedevicearepositionedorthogonaltoanincompressiblequantumHalledge-state,microwave power is coupled capacitively and non-dissipative transport in one-direction appears possible [9]. Here we engineer, on-chip, a chiral microwave interferometer that yields a high degree of non-reciprocity and dynamic range, with the low-dissipation inherent to edge transport in the quantum Hall regime. Configured as a completely passive 3-port circulator, our device demon- stratesnon-reciprocaloperationatfrequenciesandmagneticfieldscommonlyusedfortheread outofspinqubits[13,14,15],facilitatingintegrationwithsuchsemiconductortechnologies. In comparison to traditional ferrite-based microwave components, this quantum Hall circulator is reduced insize by afactor ∼1/1000th thewavelength and exhibitsa new modeof operation in which the direction of circulation can be dynamically reconfigured by altering the strength of 2 the magnetic field. A simple model based on a Fano-resonance mechanism [16] qualitatively accountsfortheobservedphenomena. Central to the operation of our device are edge magnetoplasmons (EMPs) [17] that prop- agate along a quantum Hall edge in response to a capacitively coupled microwave excitation (cid:126) (cid:126) [18, 19, 20, 21]. These chiral excitations travel with a velocity v ∼ |E|/|B|, set by the EMP (cid:126) (cid:126) ratio of the electric field E at the sample boundary and the applied magnetic field B [18]. For a high mobility 2DEG formed at the interface of the semiconductors GaAs and AlGaAs (see supplementary materials for details), the velocity of the EMP modes is typically v ∼105 EMP ms−1 [22, 23], some 1000 times slower than the speed of light in the semiconductor dielectric. InordertoexploittheseEMPstorealizenon-reciprocalmicrowavedevices,wefirstdetecttheir presence in a contactless etched disk of quantum Hall fluid by coupling to a proximal metallic coplanartransmissionline(CTL)[24],asshowninFig. 1Aand1B.Bymeasuringthetransmit- ted microwave power through the transmission line as a function of frequency f, a spectrum of discrete features is observed with applied magnetic field B (Fig. 1C). We identify EMP modes in the data with frequencies set by the edge velocity and circumference of the disk, following the dependence f ∼ B−1(log(B2) + const.) [17], consistent with the dielectric constant of GaAs [19, 25] (see supplementary materials). Comparing the microwave spectrum to transport measurementsfromaHall-baronthesamechip(Fig. 1D),wenotethatathighfield(withonly the last few Landau levels occupied) features resolve into discrete, crescent-shaped resonances thatcoincidewithminimainthelongitudinalresistanceR ,wheredissipationissuppressed. xx 3 A C f S21 Absorption ΔS21 (dB) T = 293 K B (T) 0 0.1 1 2 T = 4 K Atten. G = + 40 dB T = 20 mK ε* ≈ 8.7 6 (Gf 6 H 2 z) 50 Ω CTL z) H G f ( 500 μm ν = 4 ν = 3 2 ν = 2 B + + + + B D + + ω - 0 10 ω - +- - -- - + R (KΩ)XY 1XX (KΩ)R - - 2ω0 + + - 0 0 1 2 E t B (T) Disk of 2DEG Figure 1: Detecting microwave edge magnetoplasmons (EMPs). (A) Experimental setup including photograph of a coplanar transmission line device similar to that used to perform measurements coupled to a 350 µm etched disc of 2DEG (black dashed circle) at fridge tem- perature T = 20 mK. A vector network analyser is used to excite EMP modes across a wide frequency range and microwave absorption is measured as the ratio of the amplified output to input signal (S ) from the CTL. (B) Illustration of the fundamental (top row) and first har- 21 monic (bottom row) EMP modes as they evolve with time, where ω is the fundamental mode 0 (cid:126) and 2ω the first harmonic (adapted from [17]). Charge distributions and electric fields E are 0 indicated schematically. An external magnetic field B applied to the device points out of the page. (C) EMP spectrum of the quantum Hall disk showing absorbed microwave power as a function of frequency and magnetic field. Data has had a background, obtained at high field, subtracted. Inset shows the position of absorption dips at integer quantum Hall filling factors. Black line is a fit that allows an average dielectric constant of (cid:15)∗ ≈ 8.7 to be extracted, con- sistent with excitations of an edge-state in GaAs (see supplementary material). (D) Transverse 4 (R ) and longitudinal (R ) Hall resistance measurements taken at T = 20 mK on a Hall bar xy xx proximaltothemicrowavedisk. The2DEGis270nmbelowthesurfacewithcarrierdensityn s =1.1x1011 cm−2,andmobilityµ=5.2x106 cm2/Vs. Totestiftheseedgemagnetoplasmonssupportthenon-reciprocaltransmissionofmicrowaves, weimplementastandardcirculatorconfiguration,with3portsarrangedat120-degreeintervals around a disk of 2DEG (330 µm diameter), as shown in Fig. 2A and 2B. For a single edge at high magnetic field, a voltage applied to a port capacitance induces an orthogonal current in the edge-state, with an impedance of the order of the inverse conductance quantum (∼ 26 kΩ). Givenourmeasurementsetupuseselectroniccomponentswithacharacteristicimpedance of Z ∼ 50 Ω, we have added an impedance matching circuit to enhance the response of each 0 port (our matching network is a series chip-inductor L = 47 nH in resonance with the stray capacitance C , see supplementary materials). The circulator is further embedded in a re- stray flectometryconfiguration(seeFig2C)thatenablesameasurementoftheportreflectionaswell as port transmission coefficient, from which dissipation can be estimated. As a control we first measure all microwave S-parameters at zero magnetic field, observing that all directions and ports are equivalent, as shown in Fig. 2D. An overall frequency-dependent, but reciprocal re- sponsecanbeassociatedwiththeimpedancematchingnetwork,withmatchingfrequencysetto (cid:113) 1/ LC ∼ 1 GHz. All subsequent measurements are normalized relative to this zero-field stray transmissionresponse. 5 A C 1 mm 3 T = 4 K T = 20 mK c 2 stray L = 47 nH cpl = -16 dB c edge c p 2΄ 1 G = +40 dB B 3 D S -20 B = 0 T S13 31 S B) 2΄1 d S S ( S12 32 2 1 -60 S2΄3 0.6 1.0 1.4 330 μm f (GHz) Disk of 2DEG Figure 2: Experimental setup for determining the response of the on-chip circulator. (A) Photographofcirculatordeviceshowingthethreecoplanartransmissionlinesconnectedtocop- per chip-inductors (47 nH) for impedance matching. (B) Close-up of false-coloured photo of the circulator showing 330 µm diameter 2DEG disc with a 20 µm gap to the metal defining the three signal ports. (C) Circuit schematic of the experimental setup indicating port-to-edge capacitive coupling C and direct parasitic coupling between ports C . Resonant (LC ) edge p stray matching circuits are indicated with blue boxes. The input of port 2 passes through a direc- tional coupler, with the reflected signal coupled to the output line (denoted 2(cid:48)) and amplified. (D) Shows the full 6-way transmission response of the circulator at zero magnetic field, with S-parametermeasurementsindicatingcompletereciprocityandafrequencyresponsethatarises from the matching networks. For each port the measured response of the amplifiers, couplers andcoldattenuatorsinthecircuithavebeensubtracted. 6 Turning to our key result, Figure 3 shows the full transmission response of the 3-port cir- culator in the presence of a magnetic field that breaks time-reversal symmetry. Similar to the EMP spectrum of Fig. 1C, we first observe the presence of EMPs that enhance the transmitted power at certain frequencies, broadly following an approximate f ∼ B−1 dispersion relation, as is seen in Fig. 3A (S ) and 3B (S ). Strikingly, there are regions of the spectrum where 13 31 the transmitted power appears to flow in either a forward or reverse direction with respect to thechiralityoftheedge. Particularlyapparentarethecrescent-shapedfeaturesthatswitchfrom forward to reverse transmission at distinct frequencies. This phenomenon, with a peak near the fundamental frequency ofthe EMP mode and a dip near the first EMP harmonic, isseen for all S-parametersinthechiral(clockwise)directionofthe3-portdevice(seesolidlinesinFig. 3D). To measure the extent of non-reciprocity in our circulator, Figure 3C shows the difference be- tween forward and reverse power by subtracting S from S . Unlike the B = 0 data shown in 31 13 Fig. 2D, we now observe a strong directional dependence in the isolation between ports, that approach 40 dB at particular frequencies and magnetic fields (Fig. 3F). Alternatively, we can also test for non-reciprocity by comparing the response of signals from two different inputs of the circulator to a common output. Since the device is geometrically symmetric, the response from the separate paths S and S are the same at B = 0, (see Fig. 2D). In the presence of 2(cid:48)1 2(cid:48)3 a magnetic field however, Fig. 3G shows that these paths are no longer equivalent, but depend ratheronthedirectionofthefield. Thisisclearinthedata(Fig. 3G),sinceblueandredfeatures arenotmirroredaboutB =0. 7 A D 40 S B = 3.7 T S 13 40 13 2 S 31 S S 1 0 13 (dB) S (dB) 0 SS213΄221 S -40 2΄3 -40 B E 40 S B = 2.1 T 31 40 2 GHz) 0 31 (dS (dB) 0 f (1 B) S -40 -40 C F 40 S - S 13 31 40 2 ) Δ B 0 S (d S (d 0 1 B Δ ) -40 -40 0 1 2 3 4 0.6 1.0 1.4 B (T) f (GHz) B = 3.7 T B = 2.1 T G S - S 2’1 2’3 40 2 ) Δ Hz ν = 2 S G 0 (d f ( B) 1 ν = 1 -40 -4 -2 0 2 4 B (T) Figure 3: The non-reciprocal response of the quantum Hall circulator. (A and B) Port transmission S and S with frequency and magnetic field. All measurements have been nor- 13 31 malized to the gain-corrected background at B = 0 (shown in Fig. 2D), which defines the 0 dB colourscale. (C)DifferentialmicrowaveresponseS −S showingstrong,frequencyandB- 13 31 8 dependentnon-reciprocity. (DandE)ShowthefullcombinationoftransmissionS-parameters, taken at B-fields indicated by the symbols in C. (F) shows slices through the colour scale data in C demonstrating forward and reverse circulation. (G) Isolation, S -S measured at posi- 2(cid:48)1 2(cid:48)3 tive and negative magnetic fields. Note the anti-symmetry of the features with respect to the B =0axis. ComparingthemicrowaveresponseofthecirculatortoindependentquantumHalltransport data suggests two distinct regimes. Between integer filling factors, where R is maximised in xx transport,thereisalargenon-reciprocityinthemicrowaveresponse,butalsolikelystrongdissi- pation. Contrasting these broadregions are narrowcrescent-shaped features that occurat fields corresponding to integer filling. These narrow features are particularly strong at frequencies near twice the fundamental EMP resonance. Again, overlaying these features with transport measurements on the Hall bar indicates they align with minima in R , where dissipation is xx suppressed. Microwave loss measurements, taken by summing the transmitted and reflected signalincomparisontotheincidentpower,areconsistentwithalevelofdissipationsetbyR xx asmeasuredintransport. 9 A B S31 3 B EMP 1 φ = π C edge Out φ C In In Out edge C p C p C D 2 20 B = 3.7 T B = 3.3 T 20 0 0 S13 - S31 -20 -20 S13 B) Data B) Data S31 d d ( 20 ( S S 20 0 0 S13 - S31 -20 -20 S13 Model Model S31 0.4 0.8 1.2 0.4 0.8 1.2 f (GHz) f (GHz) f (GHz) E G 0.9 1.1 B T = 20 mK T = 4 K 6 B = 1.78 T 1 FF T ( a 2 0 .u 0 .) 1 -6 3 0.9 1.1 F H 6 B = 3.7 T 1 2 0 ) V 0 m 1 V ( -6 Port 2 3 Port 3 0 20 40 T (ns) 10

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