Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 2006: Vol 253 Index & Table of Contents

2006·0.88 MB·English

Available online at www.sciencedirect.com
ScienceDirect B
Beam Interactions
with Materiais & Atoms
ELSEVIER Nuclear Instruments and Methods in Physics Research B 253 (2006) ix—xi
www.elsevier.com/locate/nimb
Contents
Title page
Editorial
E. Napolitani, A. Kuznetsov, W. Skorupa and M. Foad
Contents
New Materials and Methods for CMOS Devices
Ultra-shallow junction by laser annealing: Integration issues and modelling
A. La Magna, P. Alippi, I. Deretzis, V. Privitera, G. Fortunato, L. Mariucci, A. Magri, E.M onakhov and B. Svensson
An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing
D. Giubertoni, G. Pepponi, M. Bersani, S. Gennaro, F. D’Acapito, R. Doherty and M.A. Foad
Laser annealing of plasma implanted boron for ultra-shallow junctions in Silicon
A. Florakis, D. Tsoukalas, I. Zergioti, K. Giannakopoulos, P. Dimitrakis, D.G. Papazoglou, G. Bennassayag, H. Bourdon
and A. Halimaoui
Optical strain measurement in ultrathin sSOI wafer
J. Munguia, H. Chouaib, J. de la Torre, G. Bremond, C. Bru-Chevallier, A. Sibai, B. Champagnon, M. Moreau
J.-M. Bluet
HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si,_,.Ge
M.S. Phen, V. Craciun, K.S. Jones, J.L. Hansen and A.N. Larsen
Strain relaxation in thin SiGe epilayers doped with carbon
M.Ya. Valakh, V.M. Dzhagan, O.S. Lytvyn, V.P. Melnik, B.M. Romanjuk and V.O. Yukhymchuk
Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication
Temperature ramping process
D. Wang, S. li, K. Ikeda, H. Nakashima, K. Matsumoto, M. Nakamae and H. Nakashima
CV characteristics of polycrystalline sige films with low GE concentration
R.C. Teixeira, 1. Doi, J.A. Diniz, J.W. Swart and M.B.P. Zakia
USJ Formation
Physical insight into ultra-shallow junction formation through atomistic modeling
L. Pelaz, M. Aboy, P. Lopez, L.A. Marques and I. Santos
B diffusion and activation phenomera during post-annealing of C co-implanted ultra-shallow junctions
M. Di Marino, E. Napolitani, M. Mastromatteo, G. Bisognin, D. De Salvador, A. Carnera, S. Mirabella, G. Impellizzeri
F. Priolo, H. Graoui and M.A. Foad
Mechanism of de-activation and clustering of B in Si at extremely high concentration
L. Romano, A.M. Piro, V. Privitera, E. Rimini, G. Fortunato, B.G. Svensson, M. Foad and M.G. Grimaldi
Lattice strain of B-B pairs formed by He irradiation in crystalline Si,_,B,/Si
G. Bisognin, D. De Salvador, E. Napolitani, A. Carnera, L.R omano, A.M. Piro, S$. Mirabella and M.G. Grimaldi
he effect of thermal treatments on the local geometry around indium in In and In + C high dose implanted Si
F. dAcapito, Y. Shimizu, S. Scalese, M. Italia, P. Alippi and S. Grasso
Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
1. Martin-Bragado, S. Tian, M. Johnson, P. Castrillo, R. Pinacho, J. Rubio and M. Jaraiz
Defects Evolution and Point Defect Engineering
Defects evolution and dopant activation anomalies in ion implanted silicon
F. Cristiano, Y. Lamrani, F. Severac, M. Gavelle, S. Boninelli, N. Cherkashin, O. Marcelot, A. Claverie, W. Lerch, S. Paul
and N. Cowern
doi: 10.1016/S0168-583X(06)01 144-X
Transformation
S. Boninelli
Annealing studi
M.A. Gad
J. Slotte
Beyond SRP: Q
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Defects and Impurities
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Thermal donor formation in silicon e1
P. Hazdra and V. Komarnitsky
Dielectric function of disorder in high-flu
P. Petrik, M. Fried, T. Lohner, N.Q
Vibrational lifetimes of light impurities
S.K. Estreicher and D. West
Isotope effects and temperature-dependence studies on vibrational lifetimes of interstitial oxygen in silicon
K.K. Kohli, G. Davies, N.Q. Vinh, D. West. S.K. Estreiche regorkiewicz, |. Izeddin and K.M. Itoh
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A. Misiuk, C.A
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