Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms 2001: Vol 178 Table of Contents

5 Pages·2001·0.98 MB·English

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Beam interactions
with Materials & Atoms
ELSEVIER
Contents
1. Invited Papers
Interface stability and se
P. Bellon and R.A. I
Nanocomposites formed t
A. Meldrum, L.A. Boat:
( nal
Rodriguez
Point aede fect cL dif
S. Libertine
Il. Nanostructures
Structural a
H Erral
rmat
“iin SiU
: f ed in thermally grows
J. Koops iuwelaerts, R. Venegas
oherent precipitate formation and diffusion effect Ge-impl
R. Fromknecht nker, |. Khubets ss and O. Mey
Ordered quantum dot formation on
I. Bobek, S. Facsk .. Dekorsy and H
Three-dimensional kinetic lattice Monte-Cark
M. Strobel, K nig and T. Miche
Shape evolution idized silicon V-grooves dur
T. Miller, K.-H. Heinig and B. Schmidt
Oxidation of Ge implanted into SiO, layers: Modeling and XPS
V.A. Borodin, K.H. Heinig, B. Schmidt and S. Oswald
Laser annealing of sapphire with implanted copper nanoparticles
t
A.L. Stepanov, | reibig, D.E. Hole, R.1. Khaibullin, 1.B. Khaibullin
Buried ZnTe nanocrystallites in thermaSliO , on silicon synthesized bi
H. Karl, | oO ins Attenberger. M. Schmid and B. Strit
Formation of s orted nanoparticlesf 1 ind thin films dur
Hor
twald ripeni
B. Rauschenba
hermal
D. Mull
Ill. Defects and Cavities in Silicon (or Implantation and Irradiation
Influence ium OX1d¢
S. Mandl nor rth. D. Mano.
Kinetic
J. Grisolia
Dwell-time «
M. Posselt
Influence of
silica
G. Battaglu
Gonella, G
Lateral getterin
F. Roqueta, |
Trapping of alumi
Ch. Ortiz, D
Structural t
1.D
Modeling
. Compound Semiconductors, Metals and Insulator
E. McG
EBIT: A
Low energy ion implantation and high energy heavy ion irradiation in Co films
K.L. Narayanan, M. Yamaguchi, N. Dharmarasu, N. Kojima and D. Kanjilal
High fluence ion beam modification of polymer surfaces: EPR and XPS studies
V.N. Popok, LI. Azarko, V.B. Odzhaev, A. Toth and R.1I. Khaibullin
Indium-tin-oxide thin film deposited by a dual ion beam assisted e-beam evaporation system
J.W. Bae, J.S. Kim and G.Y. Yeom
Heavy ion induced intermixing of metal/SiC interfaces
R. Nagel, K. Weyrich, D.H.H. Hofmann and A.G. Balogh
Correlation between distribution of nitrogen atoms implanted at high energy and high dose and nanohardness
measurements into 316L stainless steel
H. Pelletier, P. Mille, D. Muller, J.P. Stoquert. A. Cornet and J.J. Grob
lon beam induced preferential removal of oxygen from vanadium hydrates
V. Bondarenka, H. Tvardauskas, S$.G rebinskij, 8.M ickevicius, Z. Martiinas, V. Volkov and G. Zakharova
lon beam synthesis of CoSi»: Influence of surface kinetics on nucleation
4.E. Volkov, M.-O. Ruault, H. Bernas and V.A. Borodin
MeV gold irradiation induced damage in a-quartz: Competition between nuclear and electronic stopping
M. Toulemonde, 8.M.M. Ramos, H. Bernas, C. Clerc, B. Canut, J. Chaumont and C. Trautmann
Influence of boron concentration on the enhanced diffusion observed after irradiation of boron delta-doped
silicon at 570°C
P. Leveque, J.S. Christensen, A.Yu. Kuznetsov, B.G. Svensson and A. Nylandsted Larsen
Positron implantation depth profiles in s-irradiated 18 carats gold
T. Thome, J. Fradin, R.1. Grynszpan, W. Anwand and G. Brauer
Author index