nonlinear embedding for high efficiency rf power amplifier design and application to generalized ...

146 Pages·2014·2.76 MB·English

NONLINEAR EMBEDDING FOR HIGH EFFICIENCY
RF POWER AMPLIFIER DESIGN AND APPLICATION TO
GENERALIZED ASYMMETRIC DOHERTY AMPLIFIERS
DISSERTATION
Presented in Partial Fulfillment of the Requirements for
the Degree Doctor of Philosophy in the
Graduate School of The Ohio State University
By
Haedong Jang, M.S.E.E.
Graduate Program in Electrical and Computer Engineering
The Ohio State University
2014
Dissertation Committee:
Prof. PatrickRoblin,Adviser
Prof. RobertoRojas-Teran
Prof. StevenB.Bibyk
Prof. ChristopherM.Hadad
(cid:2)c Copyrightby
HaedongJang
2014
ABSTRACT
Afullymodel-basednonlinearembeddingdevicemodelincludinglowandhigh-frequency
dispersion effects is implemented for the Angelov device model and successfully demon-
strated for load modulation power amplifier (PA) applications. Using this nonlinear em-
beddingdevicemodel,anydesiredPAmodeofoperationatthecurrentsourceplanecanbe
projectedtotheexternalreferenceplanestosynthesizetherequiredmulti-harmonicsource
andloadterminations. A2DidentificationoftheintrinsicPAoperationmodesisperformed
firstatthecurrentsourcereferenceplanes. Forintrinsicmodesdefinedwithoutlossypara-
sitics, most of the required source impedance terminations will exhibit a substantial nega-
tiveresistanceafterprojectiontotheexternalreferenceplanes. Theseterminationscanthen
be implemented by active harmonic injection at the input. It is verified experimentally for
a 15 W GaN HEMT class AB mode that using the second harmonic injection synthesized
by the embedding device model at the input, yields an improved drain efficiency of up to
5%inagreementwiththesimulation.
AnasymmetricDohertyamplifierwasbuiltusingtwo15WpeakpowerpackagedGaN
transistors forthe demonstration ofthe proposed method. 71%drain efficiency atthe peak
power of 41.8 dBm and 62.7% at the second peak of 32.8 dBm (9 dB back-off) were
observed. Above50%drainefficiencywasmaintainedoverthe11dBoutputpowerrange.
51.86% average drain efficiency was observed after linearization maintaining -51.46 dBc
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adjacent channel power ratio excited by 10 MHz bandwidth long term evolution signals
with9.96dBpeaktoaveragepowerratio.
A novel procedure was introduced for designing Doherty amplifiers using the model-
based nonlinear-embedding technique. First, the Doherty intrinsic load matching network
is designed at the transistor current-source reference-plane with the main and auxiliary
devices interconnected. Identical devices with different biasing are used for realizing an
asymmetric Doherty implementation with 9 dB back-off. An even-number multi-section
impedance transformers and a reduced drain voltage of the main amplifier are used. A
closedformanalysisoftheasymmetricDohertyloadnetworkisprovided.
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Dedicatedtomyfamily.
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ACKNOWLEDGMENTS
First of all, I would like to thank Dr. Patrick Roblin, my advisor, for guiding my
Ph.D. work. He provided me the main idea of this work and whenever I had a problem he
actively and willingly solved them or provided in-depth advices. I am deeply grateful to
him for giving me this opportunity to contribute to this work as well as recommending me
to various funding sources such as National Science Foundation, Graduate Fellowship and
teachingassistantshipformetostayinfocusonmyPh.D.researchwithoutconcernsabout
financially support. Most of all, I would like to thank for his patience and encouragement
formetocontributetothetransactionqualitypaperwhichwillbeveryhelpfultomyfuture
career and opened my potential for further growth in scientific knowledge and scholarly
achievements.
IalsowouldliketothankProfessorRobertoRojasandProfessorStevenBibykandthe
graduate representative Professor Christopher Hadad for their valuable time and review of
thisdissertationandsuggestionstomakethismanuscriptmorecomplete.
IalsowouldliketothankYoungseoKo,AndresZarate-de-LandaforsupportingLSNA
measurements, showing me how to use the LSNA and the TRL calibration kit. I am also
grateful to Christophe Quindroit, YiQiao Lin, Rob D. Pond and Meenaksi Rawat for valu-
ablediscussions,teachingandgeneroussupportsasacolleague.
I also thank former graduates and visiting scholars Chie-Kai Yang, Xi Yang, Inwon
Suh, Jiwoo Kim, Dounia Baiya and Professor Zhijian Xie for generous discussions and
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various help in many different ways. I especially thank Inwon for teaching me how to use
the Quick CAM machine and making circuit boards. Thanks also goes to former graduate
Dr. Seok Joo Doo for providing the LSNA measurement program which saved significant
amountofmytime.
It is also my great pleasure to thank Professor Hyo Dal Park for introducing me to this
great opportunity of studying abroad and conducting research with globally recognized
peopleinthisareawhichwasveryinterestingtome.
I also would like to thank Dr. David E. Root for giving me the summer internship
opportunity and taking care of me during the time in Agilent Technologies. It was very
helpfulexperienceforextendinganddeepeningmyunderstandinginthisresearchfield.
I also owe a lot of appreciation to my family in South Korea for their continuous en-
couragement,supportandsacrifice. FinallyIwouldliketoexpressmydeepestgratitudeto
mymotherinheavenforgivingmethegiftofthelifeofthissweetachievementandalways
watchingmeabovetocontinuouslyremindmethefactthatshelovesme.
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VITA
March,1971 ................................Born-Wonju,RepublicofKorea
March,1994 ................................B.S.
ElectricalEngineering,
KangwonNationalUniversity,
Chuncheon,RepublicofKorea
December1996-July2007 ..................ProductDevelopmentConsultant,
SmallBusinessCorporation,
Seoul,Korea.
MARCH,2005 ............................. M.S.
Electrical&ComputerEngineering,
InhaUniversity,
Incheon,RepublicofKorea,
MARCH,2008 ............................. Ph. D.(ABD)
Electrical&ComputerEngineering,
InhaUniversity,
Incheon,RepublicofKorea,
MAY,2013 .................................M.S.
Electrical&ComputerEngineering,
TheOhioStateUniversity.
September,2009-present ....................Ph. D.Student,
ElectricalandComputerEngineering,
TheOhioStateUniversity.
September2009-August2010 ...............GraduateFellow,
ElectricalandComputerEngineering,
TheOhioStateUniversity.
September2010-December2011 ............ GraduateTeachingAssociate,
ElectricalandComputerEngineering,
TheOhioStateUniversity.
January2012-April2012 ................... GraduateResearchAssociate,
ElectricalandComputerEngineering,
TheOhioStateUniversity.
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May-August2012 ..........................Intern,
AgilentTechnologies,
SantaRosa,CA,
September2012-April2013 .................GraduateTeachingAssociate,
ElectricalandComputerEngineering,
TheOhioStateUniversity,
May2013-present ..........................GraduateResearchAssociate,
ElectricalandComputerEngineering,
TheOhioStateUniversity.
PUBLICATIONS
ResearchPublications
H. Jang, P. Roblin, C. Quindroit, and Y. Lin, ”Asymmetric Doherty power amplifier de-
signed using model-based nonlinear embedding,” IEEE Trans. Microw. Theory Techn.,
July2014. (submitted)
H. Jang, P. Roblin, and Z. Xie, ”Model-based nonlinear embedding for power amplifier
design,”IEEETrans. Microw. TheoryTechn.,May2014. (accepted)
Y. Lin, H. Jang, C. Quindroit, N. Naraharisetti, and P. Roblin, ”New supply modulation
optimization methodology for concurrent dual band envelope tracking power amplifier,”
IEEEWirelessandMicrowaveTechnologyConference,Tampa,FL,Jun. 2014
H. Jang, P. Roblin, and C. Quindroit, ”Adjustable load-modulation asymmetric Doherty
amplifierdesignusingnonlinearembedding,”IEEEMTT-SMicrowaveSymposiumDigest,
Tampa,FL,Jun. 2014.
H. Jang, P. Roblin, A. Zarate-de Landa, and J. Apolinar Reynoso-Hernancez,”Fast second
harmonic injection characterization for efficiency enhancement of RF power amplifiers,”
IEEE82thARFTGConference,Columbus,OH,Nov. 2013.
H. Jang, A. Zai, T. Reveryrand, P. Roblin, Z. Popovic, and D. E. Root,”Simulation and
measurement-based X-parameter models for power amplifiers with envelope tracking,”
IEEEMTT-SInternationalMicrowaveSymposiumDigest,Seattle,WA,Jun. 2013.
H. Jang, Y. Ko, and P. Roblin,”Development of multiharmonic verification artifact for the
LSNAandNVNA,”IEEEMicrowaveMagazine,vol. 14,no. 1,pp. 134-139,Jan. 2013.
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P. Roblin, Y. Ko, H. Jang, and J. P. Teyssier,”Pulsed RF calibration for NVNA measure-
ments,”IEEE80thARFTGConference,SanDiego,CA,Nov. 2012.
Y.Ko,P.Roblin,C.K.Yang,H.Jang,andB.Poling,”Newthermometryandtraprelaxation
characterization techniques for AlGaN/GaN HEMTs using pulsed-RF excitations,” IEEE
MTT-SInternationalMicrowaveSymposiumDigest,Montreal,QC,Canada,Jun. 2012.
H. Jang, Y. Ko, P. Roblin, C. K. Yang, and H. D. Park,”Pulsed load-pull based optimal
load-modulation PA design methodology for average efficiency enhancement,” IEEE 78th
ARFTGConference,Tempe,AZ,Dec. 2011.
FIELDS OF STUDY
MajorField: ElectricalandElectronicsEngineering
StudiesinMicrowaveandMicroelectronics: Prof.PatrickRoblin
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